KR20170122008A - Led display device, backlight unit and lighting device - Google Patents

Abstract

An embodiment of the present invention relates to an LED display device, a backlight unit, and a lighting device. The LED display device according to an embodiment of the present invention includes: a plurality of sub pixels arranged in a region where a plurality of gate lines and a plurality of data lines cross each other; and a light emitting unit including at least two or more light emitting elements connected in parallel to each of the sub pixels. The plurality of sub pixels include a switching TFT, a driving TFT, and at least two or more pixel electrodes electrically connected to the driving TFT. The pixel electrode includes at least two or more contact parts electrically connected to the light emitting unit. The embodiment of the present invention can prevent the reduction of reliability and yield due to a defective pixel, prevent the rise of manufacturing costs and time due to a repair operation by reducing the defective pixel, and prevent deterioration.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an LED display device, a backlight unit,

Embodiments relate to an LED display device, a backlight unit, and a lighting device.

A light emitting diode (LED) is one of light emitting devices that emits light when current is applied. The light emitting diode is capable of emitting light with high efficiency at a low voltage, thus providing excellent energy saving effect. In recent years, the problem of luminance of a light emitting diode has been greatly improved, and it has been applied to various devices such as a backlight unit of a liquid crystal display device, a display board, a display device, and a home appliance.

In recent years, an LED display device has been proposed in which a backlight unit is eliminated and a display is implemented using a direct LED. In a typical LED display device, an LED is mounted for each sub-pixel.

The embodiment provides an LED display device capable of improving reliability degradation due to defective pixels.

The embodiment provides an LED display device capable of improving yield reduction by defective pixels.

Embodiments provide an LED display device capable of reducing manufacturing cost and manufacturing time by a repair process by reducing defective pixels.

The embodiment provides an LED display device capable of improving deterioration.

The embodiment provides a backlight unit and a lighting device capable of improving defects.

The LED display device of the embodiment includes a plurality of sub-pixels arranged in a region where a plurality of gate lines and a plurality of data lines cross each other; And a light emitting portion having at least two light emitting elements connected in parallel to each of the subpixels, wherein the plurality of subpixels include a switching TFT and a driving TFT, and at least two or more pixel electrodes electrically connected to the driving TFT And the pixel electrode may include at least two contact portions electrically connected to the light emitting portion.

The embodiment can improve reliability and yield reduction by defective pixels, reduce defective pixels, improve manufacturing cost and manufacturing time by a repair process, and improve deterioration.

An LED display device of another embodiment includes: a pixel disposed in a region where a plurality of gate lines and a plurality of data lines intersect; And each of the pixels includes a plurality of sub-pixels including a switching TFT and a driving TFT, and the light-emitting portion includes first and second sub-pixels connected in parallel to the plurality of sub-pixels, Emitting device.

The backlight unit of the embodiment includes optical sheets; And at least two or more light emitting devices connected in parallel or in series and parallel below the optical sheets to improve defects.

The lighting apparatus of the embodiment includes: a heat dissipating body; And a light emitting unit including at least two or more light emitting devices connected in parallel or in series and parallel to one surface of the heat dissipating member.

In the embodiment, the first and second light emitting elements connected in parallel for each sub-pixel are disposed so that one of the light emitting elements is turned on even if the other light emitting element is not turned on badly.

The first and second light emitting devices connected in parallel for each sub-pixel are disposed so that even if one of the first and second light emitting devices is in contact failure, the other one is driven to reduce defective pixels of the LED display device .

In the embodiment, the first and second light emitting devices connected in parallel for each sub-pixel are disposed to reduce defective pixels of the LED display device, thereby improving manufacturing cost and manufacturing time due to the repair process.

In the embodiment, since the first and second light emitting devices connected in parallel to each sub-pixel are disposed to disperse the driving current, deterioration can be improved.

In another embodiment, the first through third light emitting devices connected in parallel and in series for each sub-pixel may be disposed to improve defective pixels.

In another embodiment, a light emitting portion is disposed in a pixel, and the light emitting portion is provided with first and second light emitting elements connected in parallel to each of a plurality of sub-pixels, thereby improving defective pixels.

1 is a block diagram schematically showing an LED display device of an embodiment.
2 is an equivalent circuit diagram of a single sub-pixel in the embodiment.
3 is a plan view showing a sub-pixel of the LED display device of the embodiment.
4 is a cross-sectional view illustrating a sub-pixel cut along the line I-I 'of FIG.
5 is a cross-sectional view showing the first and second light emitting elements of the embodiment.
6 is an equivalent circuit diagram of a single sub-pixel in another embodiment.
7 is a plan view showing a light emitting portion of another embodiment.
8 is a cross-sectional view illustrating a light emitting unit cut along a line II-II 'in FIG.
9 is a plan view showing a pixel of an LED display device according to still another embodiment.
10 is a cross-sectional view showing a pixel cut along the line III-III 'of FIG.
11 is a cross-sectional view showing a pixel cut along a line IV-IV 'in FIG.
12 is a perspective view showing the backlight unit of the embodiment.
13 is a perspective view showing a lighting apparatus of an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

FIG. 3 is a plan view showing a sub-pixel of the LED display device of the embodiment. FIG. 4 is a cross-sectional view of the LED display device of FIG. Sectional view showing a sub-pixel cut along a line I-I 'in Fig.

1 to 4, the LED display device of the embodiment may include a control unit 120, a gate driving unit 140, a data driving unit 130, and a display panel 110.

The controller 120 may receive a vertical synchronization signal Vsync, a horizontal synchronization signal Hsync, a data enable signal DE, a clock signal CLK and a data signal DATA from the outside. The control unit 120 may control the operation timings of the gate driving unit 140 and the data driving unit 130 using timing signals such as a vertical synchronizing signal, a horizontal synchronizing signal, a data enable signal, and a clock signal, It is not. For example, the control unit 120 can determine the frame period by counting the data enable signal of one horizontal period, so that the vertical synchronization signal and the horizontal synchronization signal supplied from the outside can be omitted.

The control signal generated from the controller 120 of the embodiment includes a gate control signal GDC for controlling the operation timing of the gate driver 140 and a data control signal DDC for controlling the operation timing of the data driver 130. [ ).

The controller 120 may supply the data driver 130 with a data signal DATA together with a data timing control signal DDC.

The gate driver 140 may output the gate signal while shifting the level of the gate voltage in response to the gate timing control signal GDC supplied from the controller 120. The gate driver 140 may supply a gate signal to the display panel 110 through the gate lines GL1 to GLm. The gate driver 140 may be formed in the form of an IC or a gate in panel structure on the display panel 110.

The data driver 130 samples and latches the data signal DATA in response to a data timing control signal DDC supplied from the controller 120, and converts the sampled data signal into a gamma reference voltage. The data driver 130 supplies the data signal DATA to the display panel 110 through the data lines DL1 to DLn. The data driver 130 may be formed in an IC form, but is not limited thereto.

The display panel 110 may define a plurality of pixels by intersecting the gate lines GL1 to GLm and the data lines DL1 to DLn. Here, each of the plurality of pixels may include a plurality of sub-pixels 110SP. For example, the plurality of sub-pixels 110SP may be divided into red, green, and blue regions, but the present invention is not limited thereto.

The sub-pixel 110SP of the embodiment may include a switching TFT Ts, a driving TFT Td connected to the switching TFT Ts, and a light-emitting portion 150 connected in parallel to the driving TFT Td.

The switching TFT Ts may be disposed in a region where the gate line GL1 and the data line DL1 cross each other. The switching TFT Ts may include a first gate electrode SG, a first semiconductor layer SA, a first source electrode SS, and a first drain electrode SD. The first gate electrode SG may be branched from the gate line GL1. The second semiconductor layer SA may be disposed between the first gate electrode SG, the first source electrode SS, and the first drain electrode SD. The switching TFT Ts may include a function of controlling driving of the sub-pixel 110SP.

The driving TFT Td may include a function of driving the light emitting portion 150 of the sub pixel 110SP selected by the switching TFT Ts. To this end, the driving TFT Td may include a second gate electrode DG, a second semiconductor layer DA, a second source electrode DS, and a second drain electrode DD. The second gate electrode DG may be connected to the first drain electrode SD of the switching TFT Ts. The second source electrode DS may be connected to the power supply line VDD. The second drain electrode DD may be electrically connected to the pixel electrodes PE1 and PE2.

More specifically, in the description of the sub-pixel 110SP, the switching TFT Ts and the driving TFT Td may be spaced apart from each other by a certain distance. The switching TFT Ts and the driving TFT Td are connected to a first gate electrode SG branched from a gate line GL1 on the substrate 101 and a second gate electrode SG separated from the first gate electrode SG. (DG) may be disposed. A gate insulating layer 111 may be disposed on the first and second gate electrodes SG and DG.

The first and second semiconductor layers SA and DA may be disposed on the gate insulating layer 111. The first semiconductor layer SA may be vertically overlapped with the first gate electrode SG. The second semiconductor layer DA may be vertically overlapped with the second gate electrode DG.

The first source electrode SS may be disposed on a part of the first semiconductor layer SA. The first source electrode SS may extend to an upper portion of the gate insulating layer 111.

The second source electrode DS may be disposed on a part of the second semiconductor layer DA. The second source electrode DS may extend to an upper portion of the gate insulating layer 111.

The first drain electrode SD may be disposed on a part of the first semiconductor layer SA and spaced apart from the first source electrode SS.

The second drain electrode DD may be disposed on a portion of the second semiconductor layer DA and may be disposed opposite to the second source electrode DS.

The first drain electrode SD of the switching TFT Ts may be electrically connected to the second gate electrode DG of the driving TFT Td through a gate contact hole formed in the gate insulating layer 111. [

In the sub-pixel 110SP of the embodiment, the first passivation layer 113 may be disposed on the switching TFT Ts and the driving TFT Td. The first passivation layer 113 may be disposed on the gate insulating layer 111 and may include a first semiconductor layer SA exposed from the gate insulating layer 111, a second semiconductor layer DA, May be disposed on the electrode SS, the second source electrode DS, the first drain electrode SD, and the second drain electrode DD.

The pixel electrode PE may be disposed on the first passivation layer 113 of the sub-pixel 110SP of the embodiment. The pixel electrode PE may be electrically connected to the second drain electrode DD of the driver TFT Td exposed from the first passivation layer 113 through the pixel contact hole.

The pixel electrode PE includes a first contact portion PE1 electrically connected to the first light emitting device LED1 of the light emitting portion 150 and a second contact portion PE2 electrically connected to the second light emitting device LED2 ). The first and second contact portions PE1 and PE2 are connected to the first and second light emitting devices LED1 and LED2 so that the first and second light emitting devices LED1 and LED2 can be connected in parallel . The pixel electrode PE may be electrically connected to the lower electrode of the light emitting unit 150.

In the sub-pixel 110SP of the embodiment, the second passivation layer 115 may be disposed on the first passivation layer 113 and the pixel electrode PE. For example, the second passivation layer 115 may be formed after the mounting process of the light emitting portion 150, but the present invention is not limited thereto.

The common electrode 117 may be disposed on the light emitting portion 150 exposed from the second passivation layer 115 and the second passivation layer 115 of the sub pixel 110SP of the embodiment. The common electrode 117 may include a transparent conductive material so that the light emitted from the light emitting unit 150 can be transmitted. For example, the common electrode 117 may be formed of one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO tin oxide, AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx and NiO.

The light emitting unit 150 may be disposed in the sub-pixel 110SP. The light emitting unit 150 may be disposed on the pixel electrode PE. The light emitting unit 150 will be described in detail with reference to FIG.

5 is a cross-sectional view showing the first and second light emitting elements of the embodiment.

3 to 5, the light emitting portion 150 of the embodiment may include first and second light emitting devices (LED1 and LED2).

The first and second light emitting devices LED1 and LED2 may be separated from each other.

Specifically, the first light emitting device LED1 includes a first light emitting structure 10, a first insulating layer 31, a second insulating layer 33, an upper electrode 70, and a first lower electrode 51 And the second light emitting device LED2 includes a second light emitting structure 20, a first insulating layer 31, a second insulating layer 33, an upper electrode 70, and a second lower electrode 53 can do.

The first light emitting structure 10 includes a first conductive type first semiconductor layer 11, a first active layer 13 under the first conductive type first semiconductor layer 11, The first conductive semiconductor layer 15 may include a second conductive type semiconductor layer 15.

The second light emitting structure 20 includes a first conductive type second semiconductor layer 21, a second active layer 23 under the first conductive type second semiconductor layer 21, The second semiconductor layer 25 may include a second conductive type semiconductor layer 25.

The first conductive type first semiconductor layer 11 and the first conductive type second semiconductor layer 21 may be formed of a compound semiconductor such as a semiconductor compound such as Group II-IV and Group III-V. The first conductive type first semiconductor layer 11 and the first conductive type second semiconductor layer 21 may be formed as a single layer or a multilayer. The first conductive type first semiconductor layer 11 and the first conductive type second semiconductor layer 21 may be doped with a first conductive type dopant. For example, when the first conductive type first semiconductor layer 11 and the first conductive type second semiconductor layer 21 are n-type semiconductor layers, they may include an n-type dopant. For example, the n-type dopant may include but is not limited to Si, Ge, Sn, Se, and Te. The first conductive type first semiconductor layer 11 and the first conductive type second semiconductor layer 21 may be made of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, + y < / = 1), but the present invention is not limited thereto. For example, the first conductive type first semiconductor layer 11 and the first conductive type second semiconductor layer 21 may be formed of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, Can be selected.

The first and second active layers 13 and 23 may selectively include a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure. The first and second active layers 13 and 23 may be made of a compound semiconductor. The first and second active layers 13 and 23 may be formed of at least one of Group II-IV and Group III-V compound semiconductors.

When the first and second active layers 13 and 23 are implemented as a multiple quantum well structure (MQW), quantum wells and quantum wells may be alternately arranged. The quantum well and the quantum wall may be a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? InGaN / InGaN, InGaN / InGaN, InAlGaN / InAlGaN, GaN / AlGaN, InAlGaN / GaN, GaInP / AlGaInP, GaP / AlGaP, InGaP / AlGaP, GaAs / AlGaAs, InGaN / InGaN, InGaN / InGaN, But the present invention is not limited thereto.

The second conductive type first semiconductor layer 15 and the second conductive type second semiconductor layer 25 may be formed of a semiconductor compound such as a Group II-IV and a Group III-V compound semiconductor. The second conductive type first semiconductor layer 15 and the second conductive type second semiconductor layer 25 may be formed as a single layer or a multilayer. The second conductive type first semiconductor layer 15 and the second conductive type second semiconductor layer 25 may be doped with a second conductive type dopant. For example, when the second conductive type first semiconductor layer 15 and the second conductive type second semiconductor layer 25 are p-type semiconductor layers, they may include a p-type dopant. For example, the p-type dopant may include Mg, Zn, Ca, Sr, Ba, and the like, but is not limited thereto. The second conductive type first semiconductor layer 15 and the second conductive type second semiconductor layer 25 may be In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, + y < / = 1), but the present invention is not limited thereto. For example, the second conductive type first semiconductor layer 15 and the second conductive type second semiconductor layer 25 may be formed of one selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, Can be selected.

Although the first and second light emitting structures 10 and 20 describe the first conductivity type semiconductor layers of the n-type semiconductor layer and the second conductivity type semiconductor layers of the p-type semiconductor layer, Type semiconductor layers may be formed as a p-type semiconductor layer, and the second conductivity type semiconductor layers may be formed as an n-type semiconductor layer, but the present invention is not limited thereto. Accordingly, the first and second light emitting structures 10 and 20 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The first and second light emitting structures 10 and 20 may be insulated from the outside by the first and second insulating layers 31 and 33.

The first insulating layer 31 may include a via hole exposing a part of the second conductive type first semiconductor layer 15 and a part of the second conductive type second semiconductor layer 25. The first lower electrode 51 is electrically connected to the second conductive type first semiconductor layer 15 and the second lower electrode 53 is electrically connected to the second conductive type second semiconductor layer 25, .

The second insulating layer 33 may be disposed between the first and second light emitting structures 10 and 20 to isolate the first and second light emitting structures 10 and 20 from each other. The second insulating layer 33 may include a via hole that can expose a part of the first conductive type first semiconductor layer 11 and a part of the first conductive type second semiconductor layer 21. The upper electrode 70 may electrically connect a part of the first conductive type first semiconductor layer 11 and the first conductive type second semiconductor layer 21 through the via hole.

The light emitting unit 150 including the first and second light emitting devices LED1 and LED2 having the first and second light emitting structures 10 and 20 separated from each other is disposed in each of the sub pixels 110SP . The first and second lower electrodes 51 and 53 of the embodiment are respectively connected to the first and second pixel electrodes PE1 and PE2 and the upper electrode 70 is connected to the common electrode 117, And may include first and second light emitting devices LED1 and LED2 connected in parallel to each pixel 110SP.

In the embodiment, the first and second light emitting devices LED1 and LED2 connected in parallel for each of the sub-pixels 110SP are disposed so that one of the sub-pixels 110SP is lit not to be defective but the other is lit, .

Specifically, the light emitting portion 150 may cause a contact failure after the bonding process of the first and second light emitting devices LED1 and LED2 and the pixel electrode PE of the sub pixel 110SP. The contact failure may be an open defect between the pixel electrode PE and the first and second lower electrodes 51 and 53 of the light emitting unit 150 and may be an open defect between the pixel electrode PE and the light emitting unit 150 May be short-circuited with the upper electrode (70).

The first and second light emitting devices LED1 and LED2 are connected in parallel for each sub-pixel 110SP so that even if one of the first and second light emitting devices LED1 and LED2 is in contact failure, And the yield of the LED display device can be improved by reducing defective pixels.

The first and second light emitting devices LED1 and LED2 connected in parallel for each sub-pixel 110SP are disposed to reduce defective pixels of the LED display device to improve the manufacturing cost and the manufacturing time increase due to the repair process .

In the embodiment, the first and second light emitting devices LED1 and LED2 connected in parallel for each sub-pixel 110SP are disposed to improve the deterioration because the driving current is dispersed.

FIG. 6 is an equivalent circuit diagram of a single sub-pixel in another embodiment, FIG. 7 is a plan view showing a light emitting portion of another embodiment, and FIG. 8 is a sectional view showing a light emitting portion cut along a line II-II 'of FIG.

6 to 8, the sub-pixel 210SP of another embodiment includes the first and second light emitting devices LED1 and LED2 connected in parallel, the first and second light emitting devices LED1 and LED2, And a light emitting unit 250 including a third light emitting device LED3 connected in series.

The configurations other than the light emitting portion 250 of another embodiment may adopt the technical features of the LED display device of the embodiment of Figs.

The light emitting unit 250 may include first to third light emitting devices LED1, LED2, and LED3 on a substrate 201. [ The third light emitting device LED3 of another embodiment can be completely separated from the first and second light emitting devices LED1 and LED2 and the first and second light emitting devices LED1 and LED2 can be separated from the first and second light emitting devices LED1 and LED2, 1 semiconductor layer 211 and the first conductive type second semiconductor layer 221 are mutually shared, but the present invention is not limited thereto. For example, the first to third light emitting devices (LED1, LED2, LED3) may be completely separated from each other on the substrate 201.

Specifically, the first light emitting device LED1 includes a first light emitting structure 210, a first insulating layer 231, a second insulating layer 233, a connecting electrode 270, and a first lower electrode 251 And the second light emitting device LED2 may include a second light emitting structure 220, a second insulating layer 233, a connecting electrode 270, and a first lower electrode 251.

The first light emitting structure 210 includes a first conductive type first semiconductor layer 211, a first active layer 213 on the first conductive type first semiconductor layer 211 and a second active layer 213 on the first active layer 213. 2 conductive type first semiconductor layer 215. The first conductive type semiconductor layer 215 may include a first conductive type semiconductor layer.

The second light emitting structure 220 includes a first conductive type second semiconductor layer 221, a second active layer 223 on the first conductive type second semiconductor layer 221 and a second active layer 223 on the second active layer 223. 2 conductive type second semiconductor layer 225. The second conductive type semiconductor layer 225 may be formed of, for example,

The third light emitting device LED3 may include a third light emitting structure 260, a first insulating layer 231, a second insulating layer 233, and a second lower electrode 257.

The third light emitting structure 260 includes a first conductive type third semiconductor layer 261, a third active layer 263 on the first conductive type third semiconductor layer 261, and a third active layer 263 on the second active layer 263. [ 2-conductivity type third semiconductor layer 265.

The first to third light emitting structures 210, 220 and 260 may adopt the technical features of the LED display device of the embodiment of FIGS. 1 to 5.

The first and second light emitting devices LED1 and LED2 are electrically connected to a portion of the upper surface of the second conductive type first semiconductor layer 215 from the second insulating layer 233 and a portion of the upper surface of the second conductive type second semiconductor layer 225 May be exposed to the outside. A part of the upper surface of the exposed second conductive type semiconductor layer 215 and a part of the upper surface of the second conductive type second semiconductor layer 225 may be electrically connected to the connection electrode 270.

A part of the upper surface of the first conductive type third semiconductor layer 261 is exposed from the second conductive type third semiconductor layer 265 and the third active layer 263 by mesa etching in the third light emitting device LED3 . A part of the upper surface of the exposed first conductive type third semiconductor layer 261 may be exposed from the second insulating layer 233. The upper surface of the first conductive type third semiconductor layer 261 exposed from the second insulating layer 233 may be electrically connected to the connection electrode 270. The first and second light emitting devices LED1 and LED2 may be connected in parallel and the third light emitting device LED3 may be connected in series with the first and second light emitting devices LED1 and LED2.

The first lower electrode 251 may be electrically connected to the first conductive type first semiconductor layer 211 and the first conductive type second semiconductor layer 221 through a via hole passing through the substrate 201 have. Here, the first insulating layer 233 may be disposed inside the substrate 201 on which the via-hole is formed.

The second lower electrode 257 may be electrically connected to the second conductive type third semiconductor layer 265 through a via hole passing through the substrate 201 and the third light emitting structure 260. The first insulating layer 231 may be disposed inside the substrate 201 and the third light emitting structure 260 in which the via holes are formed.

The first lower electrode 251 may be connected in parallel to the driving TFT Td, and the second lower electrode 257 may be connected to the base power source. However, the present invention is not limited thereto.

Another embodiment of the present invention is directed to a light emitting unit 150 including first and second light emitting devices LED1 and LED2 connected in parallel and a third light emitting device LED3 connected in series with the first and second light emitting devices LED1 and LED2, May be disposed in each of the sub-pixels 210SP. The first lower electrode 251 of the embodiment is electrically connected to the driving TFT Td and the second lower electrode 254 is connected to the base power source to supply at least one of the first and second light emitting elements LED1 and LED2 At least the third light emitting device LED3 is driven even if the short circuit is defective, so that the reliability degradation with respect to the defective pixel can be improved.

For example, when one or both of the first and second light emitting devices LED1 and LED2 are short-circuited, the first and second light emitting devices LED1 and LED2 are not lit, and the third light emitting device LED3 is lit .

In another embodiment, the first and second light emitting devices LED1 and LED2 connected in parallel for each sub-pixel 210SP are disposed so that even if one of the first and second light emitting devices LED1 and LED2 is in contact failure, And the yield of the LED display device can be improved by reducing defective pixels.

Another embodiment can reduce the defective pixels of the LED display device, thereby improving manufacturing cost and manufacturing time increase due to the repair process.

In another embodiment, the first to third light emitting devices (LED1, LED2, LED3) connected in parallel and in series are disposed to improve the deterioration because the driving current is dispersed.

9 is a cross-sectional view showing a pixel cut along a line III-III 'in FIG. 9, and FIG. 11 is a cross-sectional view taken along the line IV-IV' in FIG. 9, Sectional view showing a pixel cut along a line.

9-11, an LED display device according to another embodiment includes a pixel 310P including a plurality of sub-pixels 310SP1 to 310SP3, and a light emitting portion 350 disposed in each pixel 310P. . ≪ / RTI >

The light emitting unit 350 may include first and second light emitting devices connected in parallel to a plurality of sub-pixels 310SP1 to 310SP3, respectively. The light emitting unit 350 may isolate the light emitting structure between the adjacent plurality of sub-pixels 310SP1 to 310SP3 through the insulating layer for each sub-pixel in the first direction. An upper electrode 270 is disposed between the adjacent plurality of sub pixels 310SP1 to 310SP3 and a common electrode 117 is disposed on the upper electrode 270 to be electrically connected to each other. That is, the light emitting unit 350 may be electrically connected to the first conductivity type semiconductor layers in units of the pixels 310P.

In another embodiment, one light emitting portion 350 is disposed on a pixel 310P having a plurality of sub-pixels 310SP1 to 310SP3 to shorten the processing time, and reliability of the panel substrate mounting process of the light emitting portion 350 Can be improved.

The light emitting portion 350 of another embodiment may employ the technical features of the LED display device of the embodiment of Figs.

The light emitting portion 350 of another embodiment may employ the technical features of the LED display device of another embodiment of Figs. 6 to 8 connected in parallel and in series for each sub-pixel.

In another embodiment, the light emitting portion 350 including the first and second light emitting elements connected in parallel is disposed in the pixel 310P having a plurality of sub-pixels, so that even if at least one of the first and second light emitting elements is a short- And the other is turned on to improve the reliability of the defective pixel.

In another embodiment, the light emitting portion 350 including the first and second light emitting elements connected in parallel is disposed in the pixel 310P having a plurality of sub-pixels, so that even if at least one of the first and second light emitting elements is a short- And the other is turned on to improve the reliability of the defective pixel.

Another embodiment can reduce the defective pixels and improve the manufacturing cost and the manufacturing time increase by the repair process.

In another embodiment, the light emitting elements connected in parallel are arranged to improve the deterioration because the driving current is dispersed.

12 is a perspective view showing the backlight unit of the embodiment.

12, the liquid crystal display device 1100 of the embodiment includes a liquid crystal display panel 1110, a backlight unit for providing light to the liquid crystal display panel 1110, a guide panel 1180, an upper cover 1120, And a bottom cover 1130.

The liquid crystal display panel 1110 may include an upper substrate 1113 and a lower substrate 1111. The liquid crystal display panel 1110 may include a liquid crystal layer (not shown) between the upper substrate 1113 and the lower substrate 1111 and may be connected to the lower substrate 1111 A printed circuit board (not shown) that provides a signal, and may include a polarizing sheet.

In the liquid crystal display panel 1110, liquid crystal cells constituting a pixel unit are arranged in a matrix form, and liquid crystal cells control an optical transmittance according to image signal information transmitted from a driving PCB, thereby displaying an image.

In the lower substrate 1111, a plurality of gate lines and a plurality of data lines may be arranged in a matrix, and a thin film transistor (TFT) may be arranged in a crossing region between the gate lines and the data lines.

The upper substrate 1113 may include a color filter, but is not limited thereto.

The upper cover 1120 may be disposed on the upper edge of the liquid crystal display panel 1110 and may be coupled to the guide panel 1180.

The bottom cover 1130 may have an open top surface. The bottom cover 1130 may be fastened to the guide panel 1180. For example, the bottom cover 1130 may be fastened to the guide panel 1180 by a hook fastening structure, a screw fastening structure, or the like.

The guide panel 1180 may have a rectangular frame shape. The guide panel 1180 may support or accommodate the liquid crystal display panel 1110 and the backlight unit. To this end, the guide panel 1180 may include a stepped structure, a protruding structure, and a groove structure.

The backlight unit may include a light guide plate 1140, a light source unit, optical sheets 1150, and a reflective sheet 1160.

The light source unit may include a circuit board 101 and a light emitting unit 150. The light emitting unit 150 may employ the technical features of the light emitting unit of FIGS. However, the present invention is not limited to this, and may be applied to a direct-type backlight unit in which a plurality of light emitting elements are disposed directly under the liquid crystal display panel 1110 Lt; / RTI >

The backlight unit of the embodiment may include a plurality of light emitting elements connected in parallel or series-parallel to improve the lighting failure.

13 is a perspective view showing a lighting apparatus of an embodiment.

13, the illumination device according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, a socket 2800, . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device package according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250. The light source module 2200 may include a light emitting unit including light emitting devices connected in parallel or series and parallel, and the light emitting unit may employ the technical features of the light emitting units of FIGS.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide holes 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide hole 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 closes the receiving hole 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in a receiving hole 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500. The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The light emitting device according to the embodiment can be applied not only to the lighting device but also to an indicating device, a lamp, a streetlight, a vehicle lighting device, a vehicle display device, a smart watch, and the like, but is not limited thereto.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

10: First light emitting structure
20: Second light emitting structure
51: first lower electrode
53: second lower electrode
70: upper electrode
117: common electrode
110SP: Sub-pixel
150:
Ts: switching TFT
Td: driving TFT

Claims (13)

A plurality of sub-pixels arranged in a region where a plurality of gate lines and a plurality of data lines cross each other; And
And a light emitting portion having at least two light emitting elements connected in parallel to each of the subpixels,
Wherein the plurality of sub-pixels include a switching TFT and a driving TFT, and at least two or more pixel electrodes electrically connected to the driving TFT,
And the pixel electrode includes at least two contact portions electrically connected to the light emitting portion.
The method according to claim 1,
Wherein the light emitting portion includes first and second light emitting elements,
The first light emitting device may include a first light emitting structure including a first semiconductor layer of a first conductivity type, a first active layer below the first semiconductor layer of the first conductivity type, and a first semiconductor layer of a second conductivity type below the first active layer ≪ / RTI >
The second light emitting device may include a second light emitting structure including a first conductive type second semiconductor layer, a second active layer below the first conductive type second semiconductor layer, and a second light emitting second semiconductor layer below the second active layer ≪ / RTI >
And an insulating layer for insulating the first and second light emitting structures.
3. The method of claim 2,
Wherein the first conductive type first semiconductor layer and the first conductive type second semiconductor layer are connected to each other.
3. The method of claim 2,
And an upper electrode electrically connecting the first conductive type first semiconductor layer and the first conductive type second semiconductor layer.
5. The method of claim 4,
And a common electrode disposed on the upper electrode.
3. The method of claim 2,
A first lower electrode disposed below the second conductive type first semiconductor layer and a second lower electrode disposed below the second conductive type second semiconductor layer,
Wherein the at least two contact portions include first and second contact portions,
The first lower electrode is connected to the first contact portion, and the second lower electrode is connected to the second contact portion.
The method according to claim 1,
Wherein the at least two light emitting devices include first and second light emitting devices connected in parallel, and a third light emitting device connected in series with the first and second light emitting devices.
8. The method of claim 7,
Wherein the first to third light emitting elements are disposed on a substrate,
And the first and second light emitting elements are separated from the third light emitting element.
8. The method of claim 7,
The first light emitting device may include a first light emitting structure including a first conductive type first semiconductor layer, a first active layer on the first conductive type semiconductor layer, and a first conductive semiconductor layer on the first active layer Including,
The second light emitting device may include a second light emitting structure including a first conductive type second semiconductor layer, a second active layer on the first conductive type second semiconductor layer, and a second conductive type second semiconductor layer on the second active layer Including,
The third light emitting device may include a third light emitting structure including a first conductive type third semiconductor layer, a third active layer on the first conductive type third semiconductor layer, and a second conductive type third semiconductor layer on the third active layer Including,
And a connection electrode electrically connecting the first conductive type first semiconductor layer, the first conductive type second semiconductor layer, and the first conductive type third semiconductor layer.
10. The method of claim 9,
Wherein the first to third light emitting elements are disposed on a substrate,
A first lower electrode electrically connected to the first conductive type first semiconductor layer and the first conductive type second semiconductor layer through a via hole of the substrate,
And a second lower electrode electrically connected to the substrate and the second conductive type third semiconductor layer through a via hole of the third light emitting structure.
A pixel disposed in a region where a plurality of gate lines and a plurality of data lines intersect; And
And a light emitting portion disposed in each of the pixels,
Each of the pixels including a plurality of sub-pixels including a switching TFT and a driving TFT,
Wherein the light emitting unit includes first and second light emitting elements connected in parallel to each of the plurality of sub-pixels.
Optical sheets; And
And a light emitting portion including at least two or more light emitting elements connected in parallel or series-parallel under the optical sheets.
A heat radiator; And
And a light emitting unit including at least two light emitting devices connected in parallel or series-parallel to one surface of the heat dissipating member.

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