TWI711199B - Microled display panel - Google Patents

Microled display panel Download PDF

Info

Publication number
TWI711199B
TWI711199B TW108122743A TW108122743A TWI711199B TW I711199 B TWI711199 B TW I711199B TW 108122743 A TW108122743 A TW 108122743A TW 108122743 A TW108122743 A TW 108122743A TW I711199 B TWI711199 B TW I711199B
Authority
TW
Taiwan
Prior art keywords
emitting diode
display panel
micro
diode display
substrate
Prior art date
Application number
TW108122743A
Other languages
Chinese (zh)
Other versions
TW202011629A (en
Inventor
吳炳昇
陳發明
陳信宏
Original Assignee
啟端光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/128,287 external-priority patent/US10529701B2/en
Application filed by 啟端光電股份有限公司 filed Critical 啟端光電股份有限公司
Publication of TW202011629A publication Critical patent/TW202011629A/en
Application granted granted Critical
Publication of TWI711199B publication Critical patent/TWI711199B/en

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)

Abstract

A micro light-emitting diode (microLED) display panel includes microLEDs; a substrate for supporting the microLEDs, the substrate being divided into a plurality of sub-regions; and a plurality of chip-on-film (COF) packages mounted on surfaces of the sub-regions respectively, a plurality of drivers being disposed on the COF packages respectively.

Description

微發光二極體顯示面板Micro-luminescence diode display panel

本發明係有關一種顯示面板,特別是關於一種微發光二極體(microLED)顯示面板。The present invention relates to a display panel, in particular to a microLED display panel.

微發光二極體(microLED、mLED或μLED)顯示面板為平板顯示器(flat panel display)的一種,其係由尺寸等級為1~10微米之個別精微(microscopic)發光二極體所組成。相較於傳統液晶顯示面板,微發光二極體顯示面板具較大對比度及較快反應時間,且消耗較少功率。微發光二極體與有機發光二極體(OLED)雖然同樣具有低功耗的特性,但是,微發光二極體因為使用三-五族二極體技術(例如氮化鎵),因此相較於有機發光二極體具有較高的亮度(brightness)、較高的發光效能(luminous efficacy)及較長的壽命。The micro LED (microLED, mLED or μLED) display panel is a type of flat panel display, which is composed of individual microscopic LEDs with a size level of 1-10 microns. Compared with the traditional liquid crystal display panel, the micro light emitting diode display panel has a larger contrast ratio and a faster response time, and consumes less power. Although micro-light-emitting diodes and organic light-emitting diodes (OLED) have the same low power consumption characteristics, micro-light-emitting diodes use three-to-five group diode technology (such as gallium nitride), so they are more Organic light-emitting diodes have higher brightness, higher luminous efficacy and longer life.

使用薄膜電晶體(TFT)的主動驅動方式為一種普遍使用的驅動機制,其可以和微發光二極體結合以製造顯示面板。但是,薄膜電晶體使用的是互補金屬氧化物半導體(CMOS)製程,而微發光二極體則是使用覆晶(flip chip)技術,兩者會產生熱失配(thermal mismatch)問題,且薄膜電晶體的製程較為複雜。在低灰階顯示時,由於驅動電流很小,會受到微發光二極體的漏電流而影響灰階顯示。The active driving method using thin film transistors (TFT) is a commonly used driving mechanism, which can be combined with micro light emitting diodes to manufacture display panels. However, thin-film transistors use a complementary metal oxide semiconductor (CMOS) process, while micro-light-emitting diodes use flip chip technology. The two will cause thermal mismatch problems, and the thin film The manufacturing process of the transistor is more complicated. In the low-gray-scale display, since the driving current is very small, the leakage current of the micro light emitting diode will affect the gray-scale display.

被動驅動方式為另一種驅動機制。傳統的被動式驅動顯示面板,其列驅動電路與行驅動電路係設於顯示面板的邊緣。然而,當顯示面板的尺寸變大或者解析度變高時,造成驅動器的輸出負載過大,過長的延遲時間使得顯示面板無法正常驅動。因此,被動式驅動機制無法適用於大尺寸的微發光二極體顯示面板。Passive driving is another driving mechanism. In the traditional passive driving display panel, the column driving circuit and the row driving circuit are arranged on the edge of the display panel. However, when the size of the display panel becomes larger or the resolution becomes higher, the output load of the driver is too large, and the too long delay time makes the display panel unable to drive normally. Therefore, the passive driving mechanism cannot be applied to large-size micro-light-emitting diode display panels.

因此,亟需提出一種新穎的微發光二極體顯示面板,特別是大尺寸或高解析度的顯示面板,使其保有微發光二極體的優點且能改善傳統驅動機制的缺點。Therefore, there is an urgent need to provide a novel micro-light-emitting diode display panel, especially a large-size or high-resolution display panel, so that it retains the advantages of micro-light-emitting diodes and can improve the shortcomings of traditional driving mechanisms.

鑑於上述,本發明實施例的目的之一在於提出一種微發光二極體顯示面板,有效降低驅動器的負載,以實現單一大尺寸高解析度微發光二極體顯示面板。In view of the foregoing, one of the objectives of the embodiments of the present invention is to provide a micro-light-emitting diode display panel, which can effectively reduce the load of the driver, so as to realize a single large-size high-resolution micro-light-emitting diode display panel.

根據本發明實施例,微發光二極體顯示面板包含複數微發光二極體、基板及複數薄膜覆晶封裝。基板用以承載微發光二極體,且基板的表面劃分為複數次區域。薄膜覆晶封裝分別設於次區域的表面,且複數驅動器分別設於薄膜覆晶封裝。According to an embodiment of the present invention, the micro light emitting diode display panel includes a plurality of micro light emitting diodes, a substrate, and a plurality of thin film flip chip packages. The substrate is used for supporting the micro light emitting diode, and the surface of the substrate is divided into multiple sub-regions. The chip on film package is respectively arranged on the surface of the sub-area, and the plurality of drivers are arranged on the chip on film package respectively.

第一A圖顯示本發明實施例之微發光二極體(microLED)顯示面板100的俯視圖,第一B圖顯示第一A圖之微發光二極體顯示面板100的側視圖。本實施例之微發光二極體顯示面板100的架構較佳適用於大尺寸高解析度顯示面板,例如解析度為3840RGBx2160的顯示面板。在本說明書中,微發光二極體的尺寸等級為1~10微米。然而,會因產品的應用領域或將來技術的發展而更小。在本說明書中,“大尺寸”顯示面板係依目前業界的習慣,定義為10吋以上的顯示面板。然而,對於“大尺寸”顯示面板的定義會因產品的應用領域或將來技術的發展而有所改變。在本說明書中,“高解析度”顯示面板係依目前業界的習慣,定義為1080掃描線以上的顯示面板。然而,對於“高解析度”顯示面板的定義同樣會因產品的應用領域或將來技術的發展而有所改變。FIG. 1A shows a top view of a microLED display panel 100 according to an embodiment of the present invention, and FIG. 1B shows a side view of the microLED display panel 100 in FIG. 1A. The structure of the micro light emitting diode display panel 100 of this embodiment is preferably suitable for a large-size high-resolution display panel, such as a display panel with a resolution of 3840RGB×2160. In this specification, the size grade of the micro light emitting diode is 1-10 microns. However, it will be smaller due to the application field of the product or the development of future technology. In this manual, a "large size" display panel is defined as a display panel larger than 10 inches in accordance with current industry practices. However, the definition of "large-size" display panels may change due to product application fields or future technological developments. In this manual, a "high-resolution" display panel is defined as a display panel with more than 1080 scan lines in accordance with current industry practices. However, the definition of "high-resolution" display panels will also change due to product application fields or future technological developments.

在本實施例中,微發光二極體顯示面板100包含基板11,用以承載複數微發光二極體(未顯示於圖式)。基板11的材質較佳為絕緣體(例如玻璃、壓克力),也可以為其他適於承載微發光二極體的材質。In this embodiment, the micro-light-emitting diode display panel 100 includes a substrate 11 for carrying a plurality of micro-light-emitting diodes (not shown in the drawings). The material of the substrate 11 is preferably an insulator (for example, glass, acrylic), and may also be other materials suitable for carrying micro light-emitting diodes.

根據本實施例的特徵之一,基板11的表面劃分為複數次區域(sub-region)101。經劃分的該些次區域101並未實體切割開來,且基板11並非是將複數小區塊整合而成的,因此基板11為一個完整未切割的實體。換句話說,本實施例之微發光二極體顯示面板100係為單一(single或whole)或未分割(uncut)的顯示面板。第一A圖僅顯示簡化的次區域101劃分例子。以解析度3840RGBx2160的微發光二極體顯示面板100為例,基板11可劃分為80x54個次區域101,每一次區域101的解析度為48RGBx40,但也可以劃分為較多或較少的次區域101。According to one of the features of the present embodiment, the surface of the substrate 11 is divided into multiple sub-regions (sub-regions) 101. The divided sub-regions 101 are not physically cut, and the substrate 11 is not formed by integrating a plurality of small blocks, so the substrate 11 is a complete uncut entity. In other words, the micro light emitting diode display panel 100 of this embodiment is a single (single or whole) or uncut (uncut) display panel. The first figure A only shows a simplified example of the division of the sub-region 101. Taking the micro light emitting diode display panel 100 with a resolution of 3840RGBx2160 as an example, the substrate 11 can be divided into 80x54 sub-regions 101, and the resolution of each primary region 101 is 48RGBx40, but it can also be divided into more or less sub-regions. 101.

根據本實施例的另一特徵,微發光二極體顯示面板100包含複數驅動器(driver)12,分別相應設於該些次區域101的表面(例如頂面)。第一A圖所示驅動器12係設於相應次區域101的表面的中央位置,但不限定於此。第一A圖例示每ㄧ次區域101設有一驅動器12,然而在其他實施例中,每ㄧ次區域101也可設有複數驅動器12。本實施例的驅動器12可製作為晶片形式的積體電路,藉由表面黏著技術(SMT),例如晶片玻璃(chip-on-glass, COG)或覆晶(flip chip)技術,將驅動器12接合(bond)於次區域101的表面。在一例子中,驅動器12與微發光二極體係設於基板11的次區域101的相同表面。According to another feature of this embodiment, the micro light emitting diode display panel 100 includes a plurality of drivers 12, which are respectively provided on the surface (for example, the top surface) of the sub-regions 101. The driver 12 shown in FIG. 1A is located at the center of the surface of the corresponding sub-region 101, but it is not limited to this. The first diagram A illustrates that each sub-area 101 is provided with a driver 12, but in other embodiments, each sub-area 101 may also be provided with a plurality of drivers 12. The driver 12 of this embodiment can be fabricated as an integrated circuit in the form of a chip, and the driver 12 is bonded by surface mount technology (SMT), such as chip-on-glass (COG) or flip chip technology. (Bond) on the surface of sub-region 101. In one example, the driver 12 and the micro light emitting diode system are provided on the same surface of the sub-region 101 of the substrate 11.

本實施例的微發光二極體顯示面板100還包含複數時序控制器(TCON)13,其可藉由導線(例如軟性電路板,未顯示於圖式)電性連接至基板11,再經由設於基板11表面的走線(未顯示於圖式)而電性連接至相應的驅動器12。在本實施例中,一時序控制器13可電性連接至少二驅動器12。換句話說,時序控制器13的數目少於驅動器12的數目。時序控制器13可藉由走線分別直接連接至相應的驅動器12;也可藉由走線連接至一驅動器12,經信號緩衝後,再藉由走線連接至另一驅動器12。The micro light emitting diode display panel 100 of this embodiment further includes a plurality of timing controllers (TCON) 13, which can be electrically connected to the substrate 11 by wires (such as a flexible circuit board, not shown in the figure), and then through the device The traces (not shown in the drawings) on the surface of the substrate 11 are electrically connected to the corresponding driver 12. In this embodiment, a timing controller 13 can be electrically connected to at least two drivers 12. In other words, the number of timing controllers 13 is less than the number of drivers 12. The timing controller 13 can be directly connected to the corresponding driver 12 through wiring, or connected to a driver 12 through wiring, and after signal buffering, it is connected to another driver 12 through wiring.

根據本實施例的又一特徵,微發光二極體顯示面板100採用被動(passive)驅動方式以驅動微發光二極體。第二圖顯示被動驅動方式的微發光二極體顯示面板100的示意圖。時序控制器13傳送時序控制信號與顯示資料信號給驅動器12。驅動器12包含行(column)驅動電路121與列(row或scan)驅動電路122,其中行驅動電路121藉由行導線1211連接並傳送行驅動信號至同一行微發光二極體14的第一電極(例如陽極),列驅動電路122則藉由列導線1221連接並傳送列驅動信號至同一列微發光二極體14的第二電極(例如陰極)。在本實施例中,行驅動電路121與列驅動電路122係製作為單一積體電路。According to another feature of this embodiment, the micro light emitting diode display panel 100 adopts a passive driving method to drive the micro light emitting diode. The second figure shows a schematic diagram of a micro light emitting diode display panel 100 in a passive driving mode. The timing controller 13 transmits timing control signals and display data signals to the driver 12. The driver 12 includes a column drive circuit 121 and a column (row or scan) drive circuit 122. The row drive circuit 121 is connected by a row wire 1211 and transmits a row drive signal to the first electrode of the micro light emitting diode 14 in the same row. (For example, anode), the column driving circuit 122 is connected by column wires 1221 and transmits the column driving signal to the second electrode (for example, cathode) of the same column of micro light emitting diode 14. In this embodiment, the row driving circuit 121 and the column driving circuit 122 are made as a single integrated circuit.

根據上述實施例,由於微發光二極體顯示面板100的基板11劃分為複數次區域101,每一次區域101設有相應的驅動器12,因而可以有效降低行驅動電路121與列驅動電路122的負載,以實現單一大尺寸高解析度微發光二極體顯示面板。此外,相對於使用薄膜電晶體(TFT)的主動驅動方式,本實施例之微發光二極體顯示面板100因採用被動驅動方式以驅動微發光二極體14,因此可以簡化顯示面板的製程,縮短微發光二極體14的開啟(turn on)時間,提高驅動電流,有效降低微發光二極體14因漏電流對於灰階顯示所造成的影響。According to the above embodiment, since the substrate 11 of the micro light emitting diode display panel 100 is divided into a plurality of sub-regions 101, and each sub-region 101 is provided with a corresponding driver 12, the load of the row driving circuit 121 and the column driving circuit 122 can be effectively reduced. , In order to realize a single large-size high-resolution micro-light-emitting diode display panel. In addition, compared to the active driving method using thin film transistors (TFT), the micro light emitting diode display panel 100 of this embodiment adopts a passive driving method to drive the micro light emitting diode 14, so the manufacturing process of the display panel can be simplified. The turn on time of the micro light emitting diode 14 is shortened, the driving current is increased, and the influence of the leakage current of the micro light emitting diode 14 on the grayscale display caused by the leakage current is effectively reduced.

第三圖顯示本發明第一特定實施例之正面發光(frontside illuminating)的微發光二極體顯示面板300的剖視圖。在本實施例中,微發光二極體14與驅動器12設於基板11的頂面。微發光二極體14所產生的光線主要從基板11的頂面向上發光(亦即正面發光),如箭號所示。The third figure shows a cross-sectional view of the frontside illuminating micro-light emitting diode display panel 300 according to the first specific embodiment of the present invention. In this embodiment, the micro light emitting diode 14 and the driver 12 are provided on the top surface of the substrate 11. The light generated by the micro light emitting diode 14 mainly emits light from the top surface of the substrate 11 (that is, the front light), as indicated by the arrow.

如第三圖所例示,每ㄧ像素包含有紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B。基板11的表面(例如頂面)與微發光二極體14、驅動器12之間設有走線層15,用以電性連接驅動器12、微發光二極體14與時序控制器13。於相鄰像素的微發光二極體14之間,形成光阻斷(light blocking)層16於走線層15的上方。本實施例的光阻斷層16的材質可為黑矩陣(black matrix, BM)或其他可遮蔽光線的適當材質。在一實施例中,同一像素的紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之間也可以形成光阻斷層16,但是不一定要形成。As illustrated in the third figure, each pixel includes a red micro light emitting diode 14R, a green micro light emitting diode 14G, and a blue micro light emitting diode 14B. A wiring layer 15 is provided between the surface (for example, the top surface) of the substrate 11, the micro light emitting diode 14 and the driver 12 to electrically connect the driver 12, the micro light emitting diode 14 and the timing controller 13. Between the micro light-emitting diodes 14 of adjacent pixels, a light blocking layer 16 is formed above the wiring layer 15. The material of the light blocking layer 16 in this embodiment may be a black matrix (BM) or other suitable materials that can shield light. In an embodiment, the light blocking layer 16 may also be formed between the red micro light emitting diode 14R, the green micro light emitting diode 14G, and the blue micro light emitting diode 14B of the same pixel, but it does not have to be formed.

紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之上還可設有導光層17。本實施例的正面發光的微發光二極體顯示面板300還包含蓋板18,設於基板11的底面。本實施例之蓋板18的材質可為不透明材質。The red micro light emitting diode 14R, the green micro light emitting diode 14G, and the blue micro light emitting diode 14B may also be provided with a light guide layer 17 above. The micro-light-emitting diode display panel 300 with front light emitting in this embodiment further includes a cover plate 18 disposed on the bottom surface of the substrate 11. The material of the cover plate 18 of this embodiment may be an opaque material.

第四圖顯示本發明第二特定實施例之背面發光(backside illuminating)的微發光二極體顯示面板400的剖視圖。在本實施例中,微發光二極體14與驅動器12設於基板11的頂面。微發光二極體14所產生的光線主要從基板11的背面向下發光(亦即背面發光),如箭號所示。The fourth figure shows a cross-sectional view of a backside illuminating micro light emitting diode display panel 400 according to the second specific embodiment of the present invention. In this embodiment, the micro light emitting diode 14 and the driver 12 are provided on the top surface of the substrate 11. The light generated by the micro light emitting diode 14 mainly emits light downward from the back surface of the substrate 11 (that is, the back surface emits light), as shown by the arrow.

如第四圖所例示,每ㄧ像素包含有紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B。於相鄰像素的微發光二極體14之間,形成光阻斷層16於基板11的表面(例如頂面)。本實施例的光阻斷層16的材質可為黑矩陣(BM)或其他可遮蔽光線的適當材質。光阻斷層16的上方設有走線層15,用以電性連接驅動器12、微發光二極體14與時序控制器13。在一實施例中,同一像素的紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之間也可以形成光阻斷層16,但是不一定要形成。As illustrated in the fourth figure, each pixel includes a red micro light emitting diode 14R, a green micro light emitting diode 14G, and a blue micro light emitting diode 14B. Between the micro light emitting diodes 14 of adjacent pixels, a light blocking layer 16 is formed on the surface (for example, the top surface) of the substrate 11. The material of the light blocking layer 16 in this embodiment may be black matrix (BM) or other suitable materials that can shield light. A wiring layer 15 is provided above the light blocking layer 16 for electrically connecting the driver 12, the micro light emitting diode 14 and the timing controller 13. In an embodiment, the light blocking layer 16 may also be formed between the red micro light emitting diode 14R, the green micro light emitting diode 14G, and the blue micro light emitting diode 14B of the same pixel, but it does not have to be formed.

紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之上還可設有導光層17。本實施例的背面發光的微發光二極體顯示面板400還包含蓋板18,設於驅動器12、走線層15、光阻斷層16、導光層17的上方。本實施例之蓋板18的材質可為不透明材質。The red micro light emitting diode 14R, the green micro light emitting diode 14G, and the blue micro light emitting diode 14B may also be provided with a light guide layer 17 above. The back-emitting micro-light-emitting diode display panel 400 of this embodiment further includes a cover plate 18 disposed above the driver 12, the wiring layer 15, the light blocking layer 16, and the light guide layer 17. The material of the cover plate 18 of this embodiment may be an opaque material.

第五圖例示微發光二極體14的電流-電壓曲線。當操作電壓大於開啟電壓 Vf(例如3伏特),則電流即可大於預設電流值,因而可正常操作微發光二極體14使其點亮。於第一A圖所示的微發光二極體顯示面板100當中,驅動器12的額定系統電源為VDDA。然而,由於傳送電源的金屬線內具有阻抗,使得微發光二極體顯示面板100的中心處會產生一壓降ΔV。因此,微發光二極體顯示面板100的中心處,驅動器12實際上取得的電源值為VDDA-ΔV,至於微發光二極體顯示面板100的邊緣,驅動器12取得的電源值為VDDA。舉例而言,假設壓降ΔV為1伏特,開啟電壓 Vf為3伏特,若要讓驅動器12正常操作,則需符合條件VDDA-1>3,因此VDDA需大於4伏特(例如使用5伏特)。在此種情形下,驅動器12可使用低壓金屬氧化物半導體(MOS)製程來製造。The fifth figure illustrates the current-voltage curve of the micro light emitting diode 14. When the operating voltage is greater than the turn-on voltage Vf (for example, 3 volts), the current can be greater than the preset current value, so the micro light emitting diode 14 can be normally operated to light up. In the micro light emitting diode display panel 100 shown in FIG. 1A, the rated system power supply of the driver 12 is VDDA. However, due to the impedance inside the metal wire that transmits the power, a voltage drop ΔV is generated at the center of the micro light emitting diode display panel 100. Therefore, at the center of the micro light emitting diode display panel 100, the power supply value obtained by the driver 12 actually is VDDA-ΔV. As for the edge of the micro light emitting diode display panel 100, the power supply value obtained by the driver 12 is VDDA. For example, assuming that the voltage drop ΔV is 1 volt and the turn-on voltage Vf is 3 volts, for the driver 12 to operate normally, the condition VDDA-1>3 must be met, so VDDA must be greater than 4 volts (for example, 5 volts are used). In this case, the driver 12 can be manufactured using a low-voltage metal oxide semiconductor (MOS) process.

然而,當微發光二極體14的數目增加使得所需電流變大時,壓降ΔV會更明顯的增加,例如增加為4伏特。若要讓驅動器12正常操作,則需符合條件VDDA-4>3,因此VDDA需大於7伏特(例如使用8伏特)。在此種情形下,驅動器12就需要使用高壓金屬氧化物半導體(MOS)製程來製造,因而使得電路晶片的面積明顯的增大,不利於大尺寸或高解析度(例如3840RGBx2160)顯示面板的製造。為了解決上述問題,以下提出一種新穎的驅動器12架構。However, when the number of micro light-emitting diodes 14 increases so that the required current becomes larger, the voltage drop ΔV will increase significantly, for example, to 4 volts. In order for the driver 12 to operate normally, the condition VDDA-4>3 must be met, so VDDA must be greater than 7 volts (for example, 8 volts are used). In this case, the driver 12 needs to be manufactured using a high-voltage metal oxide semiconductor (MOS) process, which significantly increases the area of the circuit chip, which is not conducive to the manufacture of large-size or high-resolution (for example, 3840RGBx2160) display panels . In order to solve the above problems, a novel driver 12 architecture is proposed below.

第六圖顯示本發明實施例之驅動器12的系統方塊圖。在本實施例中,驅動器12包含低壓降(low-dropout或LDO)穩壓器123,其接收系統電源VDDA,據以產生穩壓電源VR(例如5伏特),提供給驅動電路120作為電源。本實施例之低壓降(LDO)穩壓器123可使用傳統低壓降(LDO)穩壓器的電路設計來實施,其細節因此省略。本實施例之驅動電路120可包含行驅動電路121及列驅動電路122。低壓降(LDO)穩壓器123為直流線性穩壓器(DC linear regulator)的一種,可讓穩壓電源VR非常接近系統電源VDDA。相較於切換穩壓器(switching regulator), 低壓降穩壓器123具有面積小、設計簡單等優點,且不會產生切換雜訊。在本實施例中,穩壓電源VR與地之間可連接穩壓電容器(smoothing capacitor)C,用以濾除高頻雜訊。穩壓電容器C可使用顯示面板製程當中金屬層的製程技術來形成,並不需額外的製程技術。The sixth figure shows a system block diagram of the driver 12 according to an embodiment of the present invention. In this embodiment, the driver 12 includes a low-dropout (low-dropout or LDO) regulator 123, which receives the system power VDDA, generates a regulated power supply VR (for example, 5 volts), and supplies it to the driving circuit 120 as a power supply. The low-dropout (LDO) regulator 123 of this embodiment can be implemented using the circuit design of a traditional low-dropout (LDO) regulator, and its details are therefore omitted. The driving circuit 120 of this embodiment may include a row driving circuit 121 and a column driving circuit 122. The low dropout (LDO) regulator 123 is a type of DC linear regulator, which allows the regulated power supply VR to be very close to the system power supply VDDA. Compared with a switching regulator, the low-dropout regulator 123 has the advantages of small area, simple design, etc., and does not generate switching noise. In this embodiment, a smoothing capacitor C can be connected between the regulated power supply VR and the ground to filter out high-frequency noise. The voltage stabilizing capacitor C can be formed using the process technology of the metal layer in the display panel process, and no additional process technology is required.

根據上述本實施例之驅動器12,僅低壓降(LDO)穩壓器123需使用高壓(例如大於8伏特)金屬氧化物半導體(MOS)製程來製造,其餘的驅動電路120則可使用低壓(例如低於8伏特)金屬氧化物半導體(MOS)製程來製造。反觀前述未使用低壓降(LDO)穩壓器123的架構,則是整個驅動器12都需使用高壓金屬氧化物半導體(MOS)製程來製造。所以,本實施例之驅動器12可大幅減少電路面積,有利於大尺寸或高解析度顯示面板的製造。According to the driver 12 of this embodiment described above, only the low-dropout (LDO) regulator 123 needs to be manufactured using a high-voltage (for example, greater than 8 volts) metal oxide semiconductor (MOS) process, and the remaining driving circuits 120 can be manufactured using low-voltage (for example, Below 8 volts) metal oxide semiconductor (MOS) process. In contrast to the aforementioned architecture that does not use the low-dropout (LDO) regulator 123, the entire driver 12 needs to be manufactured using a high-voltage metal oxide semiconductor (MOS) process. Therefore, the driver 12 of this embodiment can greatly reduce the circuit area, which is beneficial to the manufacture of large-size or high-resolution display panels.

第七A圖顯示本發明實施例之驅動器12(例如顯示驅動器積體電路(DDIC))的薄膜覆晶(chip-on-film或chip-on-flex, COF)封裝(package)700的示意圖。薄膜覆晶封裝700可包含軟性印刷電路板(FPCB)71,其可包含至少一主區域711與接合區712。接合區712的尺寸小於主區域711,且接合區712鄰近主區域711的一邊。FIG. 7A shows a schematic diagram of a chip-on-film or chip-on-flex (COF) package 700 of a driver 12 (such as a display driver integrated circuit (DDIC)) according to an embodiment of the present invention. The chip-on-film package 700 may include a flexible printed circuit board (FPCB) 71 which may include at least one main area 711 and a bonding area 712. The size of the bonding area 712 is smaller than the main area 711, and the bonding area 712 is adjacent to one side of the main area 711.

本實施例之薄膜覆晶封裝700可包含驅動器12,設於主區域711。其中,晶片(例如驅動器12)具接腳713,設於晶片的四個邊。晶片的接腳713藉由主區域711的走線(trace)而電性繞接至接合區712的手指(finger)連接器714。藉此,晶片四個邊的接腳713因此轉換為軟性印刷電路板71的單邊(亦即接合區712)的手指連接器714。The chip-on-film package 700 of this embodiment may include the driver 12, which is disposed in the main area 711. Among them, the chip (for example, the driver 12) has pins 713, which are arranged on four sides of the chip. The pins 713 of the chip are electrically connected to the finger connectors 714 of the bonding area 712 through traces of the main area 711. In this way, the pins 713 on the four sides of the chip are thus converted into the finger connectors 714 on one side of the flexible printed circuit board 71 (that is, the bonding area 712).

第七B圖顯示第七A圖之薄膜覆晶封裝700的側視圖,設於本發明實施例之微發光二極體顯示面板的基板11上。在本實施例中,沿著接合區712與主區域711的邊界將接合區712予以彎折再接合至基板11上。藉此,驅動器12懸空於基板11上面。雖然第七B圖例示的軟性印刷電路板71的主區域711呈直角站立於基板11,然而一般來說,軟性印刷電路板71與基板11的角度可介於0與180度之間。FIG. 7B shows a side view of the chip-on-film package 700 of FIG. 7A, which is disposed on the substrate 11 of the micro light emitting diode display panel according to the embodiment of the present invention. In this embodiment, the bonding area 712 is bent along the boundary between the bonding area 712 and the main area 711 and then bonded to the substrate 11. Thereby, the driver 12 is suspended above the substrate 11. Although the main area 711 of the flexible printed circuit board 71 illustrated in FIG. 7B stands at a right angle on the substrate 11, in general, the angle between the flexible printed circuit board 71 and the substrate 11 can be between 0 and 180 degrees.

第八A圖至第八C圖分別顯示微發光二極體顯示面板800的薄膜覆晶封裝700的俯視圖、前視圖及右側視圖。在本實施例中,微發光二極體顯示面板800較佳為背面發光的微發光二極體顯示面板(如第四圖所例示),其所產生的光線從基板11的背面向下發射。Figures 8A to 8C respectively show a top view, a front view, and a right side view of the thin-film-on-chip package 700 of the micro light emitting diode display panel 800. In this embodiment, the micro-light-emitting diode display panel 800 is preferably a back-emitting micro-light-emitting diode display panel (as illustrated in the fourth figure), and the generated light is emitted downward from the back surface of the substrate 11.

在本實施例中,微發光二極體顯示面板800可包含基板11,用以承載複數微發光二極體(未顯示於圖式)。基板11的材質較佳為絕緣體(例如玻璃、壓克力(Acrylic)),也可以為其他適於承載微發光二極體的材質。基板11的表面劃分為複數次區域101。根據本實施例的特徵之一,微發光二極體顯示面板800可包含複數薄膜覆晶封裝700,分別設於基板11的次區域101的上表面。本實施例之微發光二極體顯示面板800可包含複數驅動器12,分別設於薄膜覆晶封裝700的主區域711。如第七B圖所述,薄膜覆晶封裝700藉由接合區712而設(或接合)於基板11,使得驅動器12懸空於基板11上面。由於接合區712所需面積較主區域711或驅動器12來得小,因此薄膜覆晶封裝700僅佔用基板11極小的區域,使得基板11的珍貴區域可提供以設置更多微發光二極體。In this embodiment, the micro-light-emitting diode display panel 800 may include a substrate 11 for carrying a plurality of micro-light-emitting diodes (not shown in the drawings). The material of the substrate 11 is preferably an insulator (for example, glass or Acrylic), and may also be other materials suitable for carrying micro light-emitting diodes. The surface of the substrate 11 is divided into multiple sub-regions 101. According to one of the features of this embodiment, the micro-light-emitting diode display panel 800 may include a plurality of thin-film-on-chip packages 700, which are respectively provided on the upper surface of the sub-region 101 of the substrate 11. The micro-light-emitting diode display panel 800 of this embodiment may include a plurality of drivers 12, which are respectively disposed in the main area 711 of the film-on-chip package 700. As described in FIG. 7B, the film-on-chip package 700 is disposed (or bonded) to the substrate 11 through the bonding area 712, so that the driver 12 is suspended on the substrate 11. Since the area required for the bonding area 712 is smaller than that of the main area 711 or the driver 12, the thin-film-on-chip package 700 only occupies a very small area of the substrate 11, so that the precious area of the substrate 11 can be provided for more micro light emitting diodes.

相較於其他實施例使用晶片玻璃(chip-on-glass, COG)技術將晶片(例如驅動器12)的接腳直接設於基板11,本實施例之薄膜覆晶封裝700所佔用面積遠較晶片玻璃(COG)實施例來得少。第九A圖至第九C圖分別顯示微發光二極體顯示面板900使用晶片玻璃(COG)技術設置驅動器12的俯視圖、前視圖及右側視圖。由於驅動器12直接設於基板11上,驅動器12因此佔用基板11的相當多珍貴區域,因而無法剩下多餘區域以設置更多的微發光二極體。鑑於此,驅動器12需要製作的較小,但會增加技術困難度與成本。此外,薄膜覆晶封裝700可克服大尺寸微發光二極體顯示面板的長走線所產生的壓降效應。再者,可縮減走線寬度,因而有效增進微發光二極體顯示面板的解析度。Compared with other embodiments using chip-on-glass (COG) technology to directly provide the pins of the chip (such as the driver 12) on the substrate 11, the thin film flip chip package 700 of this embodiment occupies a much larger area than the chip The glass (COG) examples come less. Figures ninth A to ninth C respectively show a top view, a front view and a right side view of the micro light emitting diode display panel 900 using the glass on chip (COG) technology to install the driver 12. Since the driver 12 is directly arranged on the substrate 11, the driver 12 therefore occupies a considerable amount of precious area of the substrate 11, so there is no extra area left to install more micro-light emitting diodes. In view of this, the drive 12 needs to be made smaller, but it will increase the technical difficulty and cost. In addition, the film-on-chip package 700 can overcome the voltage drop effect caused by the long traces of the large-size micro-light-emitting diode display panel. Furthermore, the trace width can be reduced, thereby effectively improving the resolution of the micro light emitting diode display panel.

第十A圖顯示本發明另一實施例之驅動器12的薄膜覆晶封裝700B的示意圖。薄膜覆晶封裝700B類似於第七A圖的薄膜覆晶封裝700,不同的地方在於,薄膜覆晶封裝700B的軟性印刷電路板71可包含主區域711、第一接合區712A及第二接合區712B。第一接合區712A與第二接合區712B分別鄰近主區域712的相對二邊。在本實施例中,第一接合區712A使用外引腳接合(outer lead bonding, OLB)技術以接合至玻璃,且第二接合區712B使用內引腳接合(inner lead bonding, ILB)技術以接合至印刷電路板。FIG. 10A shows a schematic diagram of a chip on film package 700B of the driver 12 according to another embodiment of the present invention. The chip-on-film package 700B is similar to the chip-on-film package 700 in Figure 7A. The difference is that the flexible printed circuit board 71 of the chip-on-film package 700B can include a main area 711, a first bonding area 712A, and a second bonding area 712B. The first joining area 712A and the second joining area 712B are respectively adjacent to two opposite sides of the main area 712. In this embodiment, the first bonding area 712A uses outer lead bonding (OLB) technology to bond to glass, and the second bonding area 712B uses inner lead bonding (ILB) technology to bond To the printed circuit board.

第十B圖顯示第十A圖之薄膜覆晶封裝700B的側視圖,藉由第一接合區712A而設於本發明實施例之微發光二極體顯示面板的基板11(例如玻璃)上,且藉由第二接合區712B而設於印刷電路板11B(例如軟性印刷電路板)。在一例子中,印刷電路板11B電性連接至控制系統,例如時序控制器(TCON)。Figure 10B shows a side view of the thin film chip-on-chip package 700B of Figure 10A, which is provided on the substrate 11 (such as glass) of the micro light emitting diode display panel of the embodiment of the present invention by the first bonding region 712A. The second bonding area 712B is provided on the printed circuit board 11B (for example, a flexible printed circuit board). In one example, the printed circuit board 11B is electrically connected to a control system, such as a timing controller (TCON).

第十一圖顯示微發光二極體顯示面板1100的俯視圖。在本實施例中,驅動器(未顯示於圖式)可使用晶片玻璃(COG)或薄膜覆晶(COF)技術設於(非斜線)邊緣次區域101,而其他的驅動器可使用薄膜覆晶(COF)技術設於(斜線)中央次區域101。藉此,可連接中央次區域101的驅動器至時序控制器。FIG. 11 shows a top view of the micro light emitting diode display panel 1100. In this embodiment, the driver (not shown in the figure) can be installed on the edge sub-region 101 (non-slashed) using glass on chip (COG) or chip on film (COF) technology, while other drivers can use chip on film (COF) COF) technology is located in the central sub-region 101 (slashed). In this way, the drivers of the central sub-region 101 can be connected to the timing controller.

以上所述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention; all other equivalent changes or modifications made without departing from the spirit of the invention should be included in the following Within the scope of patent application.

100:微發光二極體顯示面板 101:次區域 300:正面發光的微發光二極體顯示面板 400:背面發光的微發光二極體顯示面板 11:基板 11B:印刷電路板 12:驅動器 120:驅動電路 121:行驅動電路 1211:行導線 122:列驅動電路 1221:列導線 123:低壓降穩壓器 13:時序控制器 14:微發光二極體 14R:紅色微發光二極體 14G:綠色微發光二極體 14B:藍色微發光二極體 15:走線層 16:光阻斷層 17:導光層 18:蓋板 700:薄膜覆晶封裝 700B:薄膜覆晶封裝 711:主區域 712:接合區 712A:第一接合區 712B:第二接合區 713:接腳 714:手指連接器 800:微發光二極體顯示面板 900:微發光二極體顯示面板 1100:微發光二極體顯示面板 VDDA:系統電源 VR:穩壓電源 C:穩壓電容器 TCON:時序控制器 LDO:低壓降穩壓器 OLB:外引腳接合 ILB:內引腳接合 COG:晶片玻璃 COF:薄膜覆晶 100: Micro LED display panel 101: Sub-region 300: Micro LED display panel with front light emitting 400: Micro light emitting diode display panel with back light 11: substrate 11B: Printed circuit board 12: Drive 120: drive circuit 121: Row drive circuit 1211: Line wire 122: column drive circuit 1221: column wire 123: low dropout regulator 13: timing controller 14: Micro-luminescent diode 14R: red light emitting diode 14G: Green light emitting diode 14B: blue light emitting diode 15: Wiring layer 16: light blocking layer 17: Light guide layer 18: cover 700: Thin film flip chip package 700B: Thin film flip chip package 711: main area 712: Joint Zone 712A: first junction area 712B: second junction area 713: Pin 714: Finger Connector 800: Micro LED display panel 900: Micro LED display panel 1100: Micro LED display panel VDDA: system power supply VR: Regulated power supply C: voltage regulator capacitor TCON: Timing Controller LDO: low dropout regulator OLB: Outer pin bonding ILB: inner pin bonding COG: Wafer glass COF: Chip on Film

第一A圖顯示本發明實施例之微發光二極體顯示面板的俯視圖。 第一B圖顯示第一A圖之微發光二極體顯示面板的側視圖。 第二圖顯示被動驅動方式的微發光二極體顯示面板的示意圖。 第三圖顯示本發明第一特定實施例之正面發光的微發光二極體顯示面板的剖視圖。 第四圖顯示本發明第二特定實施例之背面發光的微發光二極體顯示面板的剖視圖。 第五圖例示微發光二極體的電流-電壓曲線。 第六圖顯示本發明實施例之驅動器的系統方塊圖。 第七A圖顯示本發明實施例之驅動器的薄膜覆晶封裝的示意圖。 第七B圖顯示第七A圖之薄膜覆晶封裝的側視圖,設於本發明實施例之微發光二極體顯示面板的基板上。 第八A圖至第八C圖分別顯示微發光二極體顯示面板的薄膜覆晶的俯視圖、前視圖及右側視圖。 第九A圖至第九C圖分別顯示微發光二極體顯示面板使用晶片玻璃技術設置驅動器的俯視圖、前視圖及右側視圖。 第十A圖顯示本發明另一實施例之驅動器的薄膜覆晶封裝的示意圖。 第十B圖顯示第十A圖之薄膜覆晶封裝的側視圖,設於本發明實施例之微發光二極體顯示面板的基板與印刷電路板。 第十一圖顯示微發光二極體顯示面板的俯視圖。FIG. 1A shows a top view of a micro light emitting diode display panel according to an embodiment of the invention. The first figure B shows a side view of the micro light emitting diode display panel of the first figure A. The second figure shows a schematic diagram of a micro light emitting diode display panel in a passive driving mode. The third figure shows a cross-sectional view of the micro light emitting diode display panel with front light emitting according to the first specific embodiment of the present invention. The fourth figure shows a cross-sectional view of the back-illuminated micro light emitting diode display panel of the second specific embodiment of the present invention. The fifth figure illustrates the current-voltage curve of the micro light emitting diode. The sixth figure shows a system block diagram of the driver of the embodiment of the present invention. FIG. 7A shows a schematic diagram of a thin film on chip package of a driver according to an embodiment of the present invention. FIG. 7B shows a side view of the chip on film package of FIG. 7A, which is disposed on the substrate of the micro light emitting diode display panel of the embodiment of the present invention. Figures 8A to 8C respectively show a top view, a front view and a right side view of the chip on film of the micro light emitting diode display panel. Figures ninth A to ninth C respectively show a top view, a front view, and a right side view of the micro light emitting diode display panel using chip glass technology to install the driver. FIG. 10A shows a schematic diagram of a thin film on chip package of a driver according to another embodiment of the present invention. Figure 10B shows a side view of the chip-on-film package of Figure 10A, which is provided on the substrate and printed circuit board of the micro light emitting diode display panel of the embodiment of the present invention. Figure 11 shows a top view of the micro light emitting diode display panel.

11:基板 11: substrate

12:驅動器 12: Drive

700:薄膜覆晶封裝 700: Thin film flip chip package

711:主區域 711: main area

712:接合區 712: Joint Zone

Claims (12)

一種微發光二極體顯示面板,包含:複數微發光二極體;一基板,用以承載該微發光二極體,該基板的表面劃分為複數次區域;及複數薄膜覆晶封裝,分別設於該次區域的表面,且複數驅動器分別設於該薄膜覆晶封裝;其中該薄膜覆晶封裝站立於該基板上,使得相應的該驅動器懸空於該基板上面。 A micro-light-emitting diode display panel, comprising: a plurality of micro-light-emitting diodes; a substrate for supporting the micro-light-emitting diode, the surface of the substrate is divided into multiple sub-regions; and a plurality of thin-film flip-chip packages, respectively provided On the surface of the sub-region, a plurality of drivers are respectively arranged on the thin film on chip package; wherein the thin film on chip package stands on the substrate, so that the corresponding driver is suspended on the substrate. 根據申請專利範圍第1項所述之微發光二極體顯示面板,其中該薄膜覆晶封裝包含一軟性印刷電路板,其包含至少一主區域與一接合區,該驅動器設於該主區域。 According to the micro-light-emitting diode display panel described in claim 1, wherein the thin-film-on-chip package includes a flexible printed circuit board, which includes at least one main area and a bonding area, and the driver is disposed in the main area. 根據申請專利範圍第2項所述之微發光二極體顯示面板,其中該接合區的尺寸小於該主區域,且該接合區鄰近該主區域的一邊。 According to the micro-light emitting diode display panel described in item 2 of the scope of patent application, the size of the bonding area is smaller than the main area, and the bonding area is adjacent to one side of the main area. 根據申請專利範圍第2項所述之微發光二極體顯示面板,其中該驅動器的接腳設於該驅動器的四個邊,且該接腳電性繞接至該接合區的手指連接器。 According to the micro-light-emitting diode display panel described in item 2 of the scope of patent application, the pins of the driver are arranged on four sides of the driver, and the pins are electrically connected to the finger connectors of the bonding area. 根據申請專利範圍第2項所述之微發光二極體顯示面板,其中沿著該接合區與該主區域的邊界將該接合區予以彎折再接合至該基板上。 According to the micro-light-emitting diode display panel described in item 2 of the scope of patent application, the bonding area is bent along the boundary between the bonding area and the main area and then bonded to the substrate. 根據申請專利範圍第2項所述之微發光二極體顯示面板,其中該軟性印刷電路板站立於該基板,且與該基板的角度介於0與180度之間。 According to the micro light emitting diode display panel described in item 2 of the scope of patent application, the flexible printed circuit board stands on the substrate and the angle with the substrate is between 0 and 180 degrees. 根據申請專利範圍第1項所述之微發光二極體顯示面板,其中該微發光二極體顯示面板為背面發光的微發光二極體顯示面板,其所產生的光線從該基板的背面向下發射。 The micro-light-emitting diode display panel according to item 1 of the scope of patent application, wherein the micro-light-emitting diode display panel is a back-emitting micro-light-emitting diode display panel, and the light generated by it is directed from the back of the substrate to Down launch. 根據申請專利範圍第1項所述之微發光二極體顯示面板,其中該基板包含絕緣材質。 According to the micro light emitting diode display panel described in item 1 of the scope of patent application, the substrate includes an insulating material. 根據申請專利範圍第8項所述之微發光二極體顯示面板,其中該基板包含玻璃或壓克力。 According to item 8 of the scope of patent application, the micro light emitting diode display panel, wherein the substrate comprises glass or acrylic. 根據申請專利範圍第1項所述之微發光二極體顯示面板,其中該薄膜覆晶封裝包含一主區域、一第一接合區與一第二接合區,該第一接合區與該第二接合區分別鄰近該主區域的相對二邊。 According to the micro light emitting diode display panel described in claim 1, wherein the thin film flip chip package includes a main area, a first bonding area and a second bonding area, the first bonding area and the second bonding area The bonding area is respectively adjacent to two opposite sides of the main area. 根據申請專利範圍第10項所述之微發光二極體顯示面板,其中該第一接合區使用外引腳接合技術,且該第二接合區使用內引腳接合技術。 According to the micro-light emitting diode display panel described in item 10 of the scope of patent application, the first bonding area uses an outer pin bonding technology, and the second bonding area uses an inner pin bonding technology. 根據申請專利範圍第1項所述之微發光二極體顯示面板,其中一些該驅動器使用晶片玻璃技術或薄膜覆晶技術設於邊緣的該次區域,而其他的該驅動器使用薄膜覆晶技術設於中央的該次區域。 According to the micro light-emitting diode display panel described in the first item of the scope of patent application, some of the drivers use chip glass technology or thin film flip chip technology to be installed in the sub-area of the edge, while other drivers use thin film flip chip technology to design This sub-region in the center.
TW108122743A 2018-09-11 2019-06-28 Microled display panel TWI711199B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/128,287 2018-09-11
US16/128,287 US10529701B2 (en) 2016-09-26 2018-09-11 MicroLED display panel

Publications (2)

Publication Number Publication Date
TW202011629A TW202011629A (en) 2020-03-16
TWI711199B true TWI711199B (en) 2020-11-21

Family

ID=69745832

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108122743A TWI711199B (en) 2018-09-11 2019-06-28 Microled display panel

Country Status (2)

Country Link
CN (1) CN110890393A (en)
TW (1) TWI711199B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI733551B (en) 2020-08-10 2021-07-11 錼創顯示科技股份有限公司 Micro led display
CN112967660B (en) * 2020-08-25 2022-03-01 重庆康佳光电技术研究院有限公司 Display control method and device and display equipment
US20220375398A1 (en) * 2020-12-28 2022-11-24 Sitronix Technology Corp. Driving structure for display panel
CN113257173A (en) * 2021-03-29 2021-08-13 北海惠科光电技术有限公司 Active light-emitting device, display panel and splicing display device
CN113176688A (en) * 2021-04-26 2021-07-27 Tcl华星光电技术有限公司 Miniature light-emitting diode backlight driving assembly and display panel
US11810499B2 (en) * 2022-01-28 2023-11-07 Prilit Optronics, Inc. Micro-light-emitting diode display panel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201611235A (en) * 2014-06-18 2016-03-16 艾克斯瑟樂普林特有限公司 Micro-assembled LED display and lighting components
US20170187976A1 (en) * 2015-12-23 2017-06-29 X-Celeprint Limited Serial row-select matrix-addressed system
CN108122881A (en) * 2016-11-30 2018-06-05 乐金显示有限公司 Chip and include the display device of chip on the film on film

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2453561Y (en) * 2000-10-27 2001-10-10 陈财福 Flexible PCB Connector
JP2003101173A (en) * 2001-09-27 2003-04-04 Olympus Optical Co Ltd Flexible printed board
CN101503025A (en) * 2008-02-08 2009-08-12 精工爱普生株式会社 Liquid ejecting head and liquid ejecting apparatus
CN201285648Y (en) * 2008-09-16 2009-08-05 奇信电子股份有限公司 Improved structure of display
CN103325317B (en) * 2013-05-15 2015-04-15 京东方科技集团股份有限公司 Display panel and display device thereof
US10356858B2 (en) * 2016-09-26 2019-07-16 Prilit Optronics, Inc. MicroLED display panel
CN107422553B (en) * 2017-09-05 2020-12-25 Tcl华星光电技术有限公司 Array substrate and display panel

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201611235A (en) * 2014-06-18 2016-03-16 艾克斯瑟樂普林特有限公司 Micro-assembled LED display and lighting components
US20170187976A1 (en) * 2015-12-23 2017-06-29 X-Celeprint Limited Serial row-select matrix-addressed system
CN108122881A (en) * 2016-11-30 2018-06-05 乐金显示有限公司 Chip and include the display device of chip on the film on film

Also Published As

Publication number Publication date
TW202011629A (en) 2020-03-16
CN110890393A (en) 2020-03-17

Similar Documents

Publication Publication Date Title
TWI711199B (en) Microled display panel
CN107871454A (en) micro light emitting diode display panel
US10529701B2 (en) MicroLED display panel
US20230107672A1 (en) Display panel and method for manufacturing same
KR102748791B1 (en) Display mudule and driving method of the display module
KR102033108B1 (en) Display apparatus and driving method thereof
US10362651B2 (en) Micro lighting device
CN110033709A (en) Micro- LED display panel
US10199362B1 (en) MicroLED display panel
KR20190004608A (en) Display apparatus and driving method thereof
US20250040307A1 (en) Semiconductor light-emitting element and display device
US12039917B2 (en) Displays with hybrid-control pixel clusters
CN114747013A (en) Display device and method for manufacturing the same
US20230055746A1 (en) Displays with dual-pixel drivers
TW202410440A (en) Assembly type light emitting diode display device characterized by using an assembly manner to install a plurality of assembled sub-boards pre-arranged with a plurality of light emitting diodes and at least one transistor switch on a system main board, so as to simultaneously transfer a large number of the light emitting diodes, thereby reducing the problem of mass transfer
US20230307597A1 (en) Display device using micro led
TWI641108B (en) Microled display panel
US20240429357A1 (en) Light emitting panel, preparation method thereof, and light emitting apparatus
US20240379902A1 (en) Light-emitting diode
KR102217631B1 (en) Light emitting diode chip, light emitting diode package, and display device
US12061395B2 (en) Flat lighting device and display device using light-emitting diode
TWI820944B (en) Active mini led display and driving method thereof
US20240332475A1 (en) Display device
US20240258491A1 (en) Display device
US20240339581A1 (en) Display apparatus