TWI711199B - Microled display panel - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000010409 thin film Substances 0.000 claims description 18
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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Abstract
Description
本發明係有關一種顯示面板,特別是關於一種微發光二極體(microLED)顯示面板。The present invention relates to a display panel, in particular to a microLED display panel.
微發光二極體(microLED、mLED或μLED)顯示面板為平板顯示器(flat panel display)的一種,其係由尺寸等級為1~10微米之個別精微(microscopic)發光二極體所組成。相較於傳統液晶顯示面板,微發光二極體顯示面板具較大對比度及較快反應時間,且消耗較少功率。微發光二極體與有機發光二極體(OLED)雖然同樣具有低功耗的特性,但是,微發光二極體因為使用三-五族二極體技術(例如氮化鎵),因此相較於有機發光二極體具有較高的亮度(brightness)、較高的發光效能(luminous efficacy)及較長的壽命。The micro LED (microLED, mLED or μLED) display panel is a type of flat panel display, which is composed of individual microscopic LEDs with a size level of 1-10 microns. Compared with the traditional liquid crystal display panel, the micro light emitting diode display panel has a larger contrast ratio and a faster response time, and consumes less power. Although micro-light-emitting diodes and organic light-emitting diodes (OLED) have the same low power consumption characteristics, micro-light-emitting diodes use three-to-five group diode technology (such as gallium nitride), so they are more Organic light-emitting diodes have higher brightness, higher luminous efficacy and longer life.
使用薄膜電晶體(TFT)的主動驅動方式為一種普遍使用的驅動機制,其可以和微發光二極體結合以製造顯示面板。但是,薄膜電晶體使用的是互補金屬氧化物半導體(CMOS)製程,而微發光二極體則是使用覆晶(flip chip)技術,兩者會產生熱失配(thermal mismatch)問題,且薄膜電晶體的製程較為複雜。在低灰階顯示時,由於驅動電流很小,會受到微發光二極體的漏電流而影響灰階顯示。The active driving method using thin film transistors (TFT) is a commonly used driving mechanism, which can be combined with micro light emitting diodes to manufacture display panels. However, thin-film transistors use a complementary metal oxide semiconductor (CMOS) process, while micro-light-emitting diodes use flip chip technology. The two will cause thermal mismatch problems, and the thin film The manufacturing process of the transistor is more complicated. In the low-gray-scale display, since the driving current is very small, the leakage current of the micro light emitting diode will affect the gray-scale display.
被動驅動方式為另一種驅動機制。傳統的被動式驅動顯示面板,其列驅動電路與行驅動電路係設於顯示面板的邊緣。然而,當顯示面板的尺寸變大或者解析度變高時,造成驅動器的輸出負載過大,過長的延遲時間使得顯示面板無法正常驅動。因此,被動式驅動機制無法適用於大尺寸的微發光二極體顯示面板。Passive driving is another driving mechanism. In the traditional passive driving display panel, the column driving circuit and the row driving circuit are arranged on the edge of the display panel. However, when the size of the display panel becomes larger or the resolution becomes higher, the output load of the driver is too large, and the too long delay time makes the display panel unable to drive normally. Therefore, the passive driving mechanism cannot be applied to large-size micro-light-emitting diode display panels.
因此,亟需提出一種新穎的微發光二極體顯示面板,特別是大尺寸或高解析度的顯示面板,使其保有微發光二極體的優點且能改善傳統驅動機制的缺點。Therefore, there is an urgent need to provide a novel micro-light-emitting diode display panel, especially a large-size or high-resolution display panel, so that it retains the advantages of micro-light-emitting diodes and can improve the shortcomings of traditional driving mechanisms.
鑑於上述,本發明實施例的目的之一在於提出一種微發光二極體顯示面板,有效降低驅動器的負載,以實現單一大尺寸高解析度微發光二極體顯示面板。In view of the foregoing, one of the objectives of the embodiments of the present invention is to provide a micro-light-emitting diode display panel, which can effectively reduce the load of the driver, so as to realize a single large-size high-resolution micro-light-emitting diode display panel.
根據本發明實施例,微發光二極體顯示面板包含複數微發光二極體、基板及複數薄膜覆晶封裝。基板用以承載微發光二極體,且基板的表面劃分為複數次區域。薄膜覆晶封裝分別設於次區域的表面,且複數驅動器分別設於薄膜覆晶封裝。According to an embodiment of the present invention, the micro light emitting diode display panel includes a plurality of micro light emitting diodes, a substrate, and a plurality of thin film flip chip packages. The substrate is used for supporting the micro light emitting diode, and the surface of the substrate is divided into multiple sub-regions. The chip on film package is respectively arranged on the surface of the sub-area, and the plurality of drivers are arranged on the chip on film package respectively.
第一A圖顯示本發明實施例之微發光二極體(microLED)顯示面板100的俯視圖,第一B圖顯示第一A圖之微發光二極體顯示面板100的側視圖。本實施例之微發光二極體顯示面板100的架構較佳適用於大尺寸高解析度顯示面板,例如解析度為3840RGBx2160的顯示面板。在本說明書中,微發光二極體的尺寸等級為1~10微米。然而,會因產品的應用領域或將來技術的發展而更小。在本說明書中,“大尺寸”顯示面板係依目前業界的習慣,定義為10吋以上的顯示面板。然而,對於“大尺寸”顯示面板的定義會因產品的應用領域或將來技術的發展而有所改變。在本說明書中,“高解析度”顯示面板係依目前業界的習慣,定義為1080掃描線以上的顯示面板。然而,對於“高解析度”顯示面板的定義同樣會因產品的應用領域或將來技術的發展而有所改變。FIG. 1A shows a top view of a
在本實施例中,微發光二極體顯示面板100包含基板11,用以承載複數微發光二極體(未顯示於圖式)。基板11的材質較佳為絕緣體(例如玻璃、壓克力),也可以為其他適於承載微發光二極體的材質。In this embodiment, the micro-light-emitting
根據本實施例的特徵之一,基板11的表面劃分為複數次區域(sub-region)101。經劃分的該些次區域101並未實體切割開來,且基板11並非是將複數小區塊整合而成的,因此基板11為一個完整未切割的實體。換句話說,本實施例之微發光二極體顯示面板100係為單一(single或whole)或未分割(uncut)的顯示面板。第一A圖僅顯示簡化的次區域101劃分例子。以解析度3840RGBx2160的微發光二極體顯示面板100為例,基板11可劃分為80x54個次區域101,每一次區域101的解析度為48RGBx40,但也可以劃分為較多或較少的次區域101。According to one of the features of the present embodiment, the surface of the
根據本實施例的另一特徵,微發光二極體顯示面板100包含複數驅動器(driver)12,分別相應設於該些次區域101的表面(例如頂面)。第一A圖所示驅動器12係設於相應次區域101的表面的中央位置,但不限定於此。第一A圖例示每ㄧ次區域101設有一驅動器12,然而在其他實施例中,每ㄧ次區域101也可設有複數驅動器12。本實施例的驅動器12可製作為晶片形式的積體電路,藉由表面黏著技術(SMT),例如晶片玻璃(chip-on-glass, COG)或覆晶(flip chip)技術,將驅動器12接合(bond)於次區域101的表面。在一例子中,驅動器12與微發光二極體係設於基板11的次區域101的相同表面。According to another feature of this embodiment, the micro light emitting
本實施例的微發光二極體顯示面板100還包含複數時序控制器(TCON)13,其可藉由導線(例如軟性電路板,未顯示於圖式)電性連接至基板11,再經由設於基板11表面的走線(未顯示於圖式)而電性連接至相應的驅動器12。在本實施例中,一時序控制器13可電性連接至少二驅動器12。換句話說,時序控制器13的數目少於驅動器12的數目。時序控制器13可藉由走線分別直接連接至相應的驅動器12;也可藉由走線連接至一驅動器12,經信號緩衝後,再藉由走線連接至另一驅動器12。The micro light emitting
根據本實施例的又一特徵,微發光二極體顯示面板100採用被動(passive)驅動方式以驅動微發光二極體。第二圖顯示被動驅動方式的微發光二極體顯示面板100的示意圖。時序控制器13傳送時序控制信號與顯示資料信號給驅動器12。驅動器12包含行(column)驅動電路121與列(row或scan)驅動電路122,其中行驅動電路121藉由行導線1211連接並傳送行驅動信號至同一行微發光二極體14的第一電極(例如陽極),列驅動電路122則藉由列導線1221連接並傳送列驅動信號至同一列微發光二極體14的第二電極(例如陰極)。在本實施例中,行驅動電路121與列驅動電路122係製作為單一積體電路。According to another feature of this embodiment, the micro light emitting
根據上述實施例,由於微發光二極體顯示面板100的基板11劃分為複數次區域101,每一次區域101設有相應的驅動器12,因而可以有效降低行驅動電路121與列驅動電路122的負載,以實現單一大尺寸高解析度微發光二極體顯示面板。此外,相對於使用薄膜電晶體(TFT)的主動驅動方式,本實施例之微發光二極體顯示面板100因採用被動驅動方式以驅動微發光二極體14,因此可以簡化顯示面板的製程,縮短微發光二極體14的開啟(turn on)時間,提高驅動電流,有效降低微發光二極體14因漏電流對於灰階顯示所造成的影響。According to the above embodiment, since the
第三圖顯示本發明第一特定實施例之正面發光(frontside illuminating)的微發光二極體顯示面板300的剖視圖。在本實施例中,微發光二極體14與驅動器12設於基板11的頂面。微發光二極體14所產生的光線主要從基板11的頂面向上發光(亦即正面發光),如箭號所示。The third figure shows a cross-sectional view of the frontside illuminating micro-light emitting
如第三圖所例示,每ㄧ像素包含有紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B。基板11的表面(例如頂面)與微發光二極體14、驅動器12之間設有走線層15,用以電性連接驅動器12、微發光二極體14與時序控制器13。於相鄰像素的微發光二極體14之間,形成光阻斷(light blocking)層16於走線層15的上方。本實施例的光阻斷層16的材質可為黑矩陣(black matrix, BM)或其他可遮蔽光線的適當材質。在一實施例中,同一像素的紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之間也可以形成光阻斷層16,但是不一定要形成。As illustrated in the third figure, each pixel includes a red micro
紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之上還可設有導光層17。本實施例的正面發光的微發光二極體顯示面板300還包含蓋板18,設於基板11的底面。本實施例之蓋板18的材質可為不透明材質。The red micro
第四圖顯示本發明第二特定實施例之背面發光(backside illuminating)的微發光二極體顯示面板400的剖視圖。在本實施例中,微發光二極體14與驅動器12設於基板11的頂面。微發光二極體14所產生的光線主要從基板11的背面向下發光(亦即背面發光),如箭號所示。The fourth figure shows a cross-sectional view of a backside illuminating micro light emitting
如第四圖所例示,每ㄧ像素包含有紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B。於相鄰像素的微發光二極體14之間,形成光阻斷層16於基板11的表面(例如頂面)。本實施例的光阻斷層16的材質可為黑矩陣(BM)或其他可遮蔽光線的適當材質。光阻斷層16的上方設有走線層15,用以電性連接驅動器12、微發光二極體14與時序控制器13。在一實施例中,同一像素的紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之間也可以形成光阻斷層16,但是不一定要形成。As illustrated in the fourth figure, each pixel includes a red micro
紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之上還可設有導光層17。本實施例的背面發光的微發光二極體顯示面板400還包含蓋板18,設於驅動器12、走線層15、光阻斷層16、導光層17的上方。本實施例之蓋板18的材質可為不透明材質。The red micro
第五圖例示微發光二極體14的電流-電壓曲線。當操作電壓大於開啟電壓 Vf(例如3伏特),則電流即可大於預設電流值,因而可正常操作微發光二極體14使其點亮。於第一A圖所示的微發光二極體顯示面板100當中,驅動器12的額定系統電源為VDDA。然而,由於傳送電源的金屬線內具有阻抗,使得微發光二極體顯示面板100的中心處會產生一壓降ΔV。因此,微發光二極體顯示面板100的中心處,驅動器12實際上取得的電源值為VDDA-ΔV,至於微發光二極體顯示面板100的邊緣,驅動器12取得的電源值為VDDA。舉例而言,假設壓降ΔV為1伏特,開啟電壓 Vf為3伏特,若要讓驅動器12正常操作,則需符合條件VDDA-1>3,因此VDDA需大於4伏特(例如使用5伏特)。在此種情形下,驅動器12可使用低壓金屬氧化物半導體(MOS)製程來製造。The fifth figure illustrates the current-voltage curve of the micro
然而,當微發光二極體14的數目增加使得所需電流變大時,壓降ΔV會更明顯的增加,例如增加為4伏特。若要讓驅動器12正常操作,則需符合條件VDDA-4>3,因此VDDA需大於7伏特(例如使用8伏特)。在此種情形下,驅動器12就需要使用高壓金屬氧化物半導體(MOS)製程來製造,因而使得電路晶片的面積明顯的增大,不利於大尺寸或高解析度(例如3840RGBx2160)顯示面板的製造。為了解決上述問題,以下提出一種新穎的驅動器12架構。However, when the number of micro light-emitting
第六圖顯示本發明實施例之驅動器12的系統方塊圖。在本實施例中,驅動器12包含低壓降(low-dropout或LDO)穩壓器123,其接收系統電源VDDA,據以產生穩壓電源VR(例如5伏特),提供給驅動電路120作為電源。本實施例之低壓降(LDO)穩壓器123可使用傳統低壓降(LDO)穩壓器的電路設計來實施,其細節因此省略。本實施例之驅動電路120可包含行驅動電路121及列驅動電路122。低壓降(LDO)穩壓器123為直流線性穩壓器(DC linear regulator)的一種,可讓穩壓電源VR非常接近系統電源VDDA。相較於切換穩壓器(switching regulator), 低壓降穩壓器123具有面積小、設計簡單等優點,且不會產生切換雜訊。在本實施例中,穩壓電源VR與地之間可連接穩壓電容器(smoothing capacitor)C,用以濾除高頻雜訊。穩壓電容器C可使用顯示面板製程當中金屬層的製程技術來形成,並不需額外的製程技術。The sixth figure shows a system block diagram of the
根據上述本實施例之驅動器12,僅低壓降(LDO)穩壓器123需使用高壓(例如大於8伏特)金屬氧化物半導體(MOS)製程來製造,其餘的驅動電路120則可使用低壓(例如低於8伏特)金屬氧化物半導體(MOS)製程來製造。反觀前述未使用低壓降(LDO)穩壓器123的架構,則是整個驅動器12都需使用高壓金屬氧化物半導體(MOS)製程來製造。所以,本實施例之驅動器12可大幅減少電路面積,有利於大尺寸或高解析度顯示面板的製造。According to the
第七A圖顯示本發明實施例之驅動器12(例如顯示驅動器積體電路(DDIC))的薄膜覆晶(chip-on-film或chip-on-flex, COF)封裝(package)700的示意圖。薄膜覆晶封裝700可包含軟性印刷電路板(FPCB)71,其可包含至少一主區域711與接合區712。接合區712的尺寸小於主區域711,且接合區712鄰近主區域711的一邊。FIG. 7A shows a schematic diagram of a chip-on-film or chip-on-flex (COF)
本實施例之薄膜覆晶封裝700可包含驅動器12,設於主區域711。其中,晶片(例如驅動器12)具接腳713,設於晶片的四個邊。晶片的接腳713藉由主區域711的走線(trace)而電性繞接至接合區712的手指(finger)連接器714。藉此,晶片四個邊的接腳713因此轉換為軟性印刷電路板71的單邊(亦即接合區712)的手指連接器714。The chip-on-
第七B圖顯示第七A圖之薄膜覆晶封裝700的側視圖,設於本發明實施例之微發光二極體顯示面板的基板11上。在本實施例中,沿著接合區712與主區域711的邊界將接合區712予以彎折再接合至基板11上。藉此,驅動器12懸空於基板11上面。雖然第七B圖例示的軟性印刷電路板71的主區域711呈直角站立於基板11,然而一般來說,軟性印刷電路板71與基板11的角度可介於0與180度之間。FIG. 7B shows a side view of the chip-on-
第八A圖至第八C圖分別顯示微發光二極體顯示面板800的薄膜覆晶封裝700的俯視圖、前視圖及右側視圖。在本實施例中,微發光二極體顯示面板800較佳為背面發光的微發光二極體顯示面板(如第四圖所例示),其所產生的光線從基板11的背面向下發射。Figures 8A to 8C respectively show a top view, a front view, and a right side view of the thin-film-on-
在本實施例中,微發光二極體顯示面板800可包含基板11,用以承載複數微發光二極體(未顯示於圖式)。基板11的材質較佳為絕緣體(例如玻璃、壓克力(Acrylic)),也可以為其他適於承載微發光二極體的材質。基板11的表面劃分為複數次區域101。根據本實施例的特徵之一,微發光二極體顯示面板800可包含複數薄膜覆晶封裝700,分別設於基板11的次區域101的上表面。本實施例之微發光二極體顯示面板800可包含複數驅動器12,分別設於薄膜覆晶封裝700的主區域711。如第七B圖所述,薄膜覆晶封裝700藉由接合區712而設(或接合)於基板11,使得驅動器12懸空於基板11上面。由於接合區712所需面積較主區域711或驅動器12來得小,因此薄膜覆晶封裝700僅佔用基板11極小的區域,使得基板11的珍貴區域可提供以設置更多微發光二極體。In this embodiment, the micro-light-emitting
相較於其他實施例使用晶片玻璃(chip-on-glass, COG)技術將晶片(例如驅動器12)的接腳直接設於基板11,本實施例之薄膜覆晶封裝700所佔用面積遠較晶片玻璃(COG)實施例來得少。第九A圖至第九C圖分別顯示微發光二極體顯示面板900使用晶片玻璃(COG)技術設置驅動器12的俯視圖、前視圖及右側視圖。由於驅動器12直接設於基板11上,驅動器12因此佔用基板11的相當多珍貴區域,因而無法剩下多餘區域以設置更多的微發光二極體。鑑於此,驅動器12需要製作的較小,但會增加技術困難度與成本。此外,薄膜覆晶封裝700可克服大尺寸微發光二極體顯示面板的長走線所產生的壓降效應。再者,可縮減走線寬度,因而有效增進微發光二極體顯示面板的解析度。Compared with other embodiments using chip-on-glass (COG) technology to directly provide the pins of the chip (such as the driver 12) on the
第十A圖顯示本發明另一實施例之驅動器12的薄膜覆晶封裝700B的示意圖。薄膜覆晶封裝700B類似於第七A圖的薄膜覆晶封裝700,不同的地方在於,薄膜覆晶封裝700B的軟性印刷電路板71可包含主區域711、第一接合區712A及第二接合區712B。第一接合區712A與第二接合區712B分別鄰近主區域712的相對二邊。在本實施例中,第一接合區712A使用外引腳接合(outer lead bonding, OLB)技術以接合至玻璃,且第二接合區712B使用內引腳接合(inner lead bonding, ILB)技術以接合至印刷電路板。FIG. 10A shows a schematic diagram of a chip on
第十B圖顯示第十A圖之薄膜覆晶封裝700B的側視圖,藉由第一接合區712A而設於本發明實施例之微發光二極體顯示面板的基板11(例如玻璃)上,且藉由第二接合區712B而設於印刷電路板11B(例如軟性印刷電路板)。在一例子中,印刷電路板11B電性連接至控制系統,例如時序控制器(TCON)。Figure 10B shows a side view of the thin film chip-on-
第十一圖顯示微發光二極體顯示面板1100的俯視圖。在本實施例中,驅動器(未顯示於圖式)可使用晶片玻璃(COG)或薄膜覆晶(COF)技術設於(非斜線)邊緣次區域101,而其他的驅動器可使用薄膜覆晶(COF)技術設於(斜線)中央次區域101。藉此,可連接中央次區域101的驅動器至時序控制器。FIG. 11 shows a top view of the micro light emitting
以上所述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention; all other equivalent changes or modifications made without departing from the spirit of the invention should be included in the following Within the scope of patent application.
100:微發光二極體顯示面板
101:次區域
300:正面發光的微發光二極體顯示面板
400:背面發光的微發光二極體顯示面板
11:基板
11B:印刷電路板
12:驅動器
120:驅動電路
121:行驅動電路
1211:行導線
122:列驅動電路
1221:列導線
123:低壓降穩壓器
13:時序控制器
14:微發光二極體
14R:紅色微發光二極體
14G:綠色微發光二極體
14B:藍色微發光二極體
15:走線層
16:光阻斷層
17:導光層
18:蓋板
700:薄膜覆晶封裝
700B:薄膜覆晶封裝
711:主區域
712:接合區
712A:第一接合區
712B:第二接合區
713:接腳
714:手指連接器
800:微發光二極體顯示面板
900:微發光二極體顯示面板
1100:微發光二極體顯示面板
VDDA:系統電源
VR:穩壓電源
C:穩壓電容器
TCON:時序控制器
LDO:低壓降穩壓器
OLB:外引腳接合
ILB:內引腳接合
COG:晶片玻璃
COF:薄膜覆晶
100: Micro LED display panel
101: Sub-region
300: Micro LED display panel with front light emitting
400: Micro light emitting diode display panel with back light
11:
第一A圖顯示本發明實施例之微發光二極體顯示面板的俯視圖。 第一B圖顯示第一A圖之微發光二極體顯示面板的側視圖。 第二圖顯示被動驅動方式的微發光二極體顯示面板的示意圖。 第三圖顯示本發明第一特定實施例之正面發光的微發光二極體顯示面板的剖視圖。 第四圖顯示本發明第二特定實施例之背面發光的微發光二極體顯示面板的剖視圖。 第五圖例示微發光二極體的電流-電壓曲線。 第六圖顯示本發明實施例之驅動器的系統方塊圖。 第七A圖顯示本發明實施例之驅動器的薄膜覆晶封裝的示意圖。 第七B圖顯示第七A圖之薄膜覆晶封裝的側視圖,設於本發明實施例之微發光二極體顯示面板的基板上。 第八A圖至第八C圖分別顯示微發光二極體顯示面板的薄膜覆晶的俯視圖、前視圖及右側視圖。 第九A圖至第九C圖分別顯示微發光二極體顯示面板使用晶片玻璃技術設置驅動器的俯視圖、前視圖及右側視圖。 第十A圖顯示本發明另一實施例之驅動器的薄膜覆晶封裝的示意圖。 第十B圖顯示第十A圖之薄膜覆晶封裝的側視圖,設於本發明實施例之微發光二極體顯示面板的基板與印刷電路板。 第十一圖顯示微發光二極體顯示面板的俯視圖。FIG. 1A shows a top view of a micro light emitting diode display panel according to an embodiment of the invention. The first figure B shows a side view of the micro light emitting diode display panel of the first figure A. The second figure shows a schematic diagram of a micro light emitting diode display panel in a passive driving mode. The third figure shows a cross-sectional view of the micro light emitting diode display panel with front light emitting according to the first specific embodiment of the present invention. The fourth figure shows a cross-sectional view of the back-illuminated micro light emitting diode display panel of the second specific embodiment of the present invention. The fifth figure illustrates the current-voltage curve of the micro light emitting diode. The sixth figure shows a system block diagram of the driver of the embodiment of the present invention. FIG. 7A shows a schematic diagram of a thin film on chip package of a driver according to an embodiment of the present invention. FIG. 7B shows a side view of the chip on film package of FIG. 7A, which is disposed on the substrate of the micro light emitting diode display panel of the embodiment of the present invention. Figures 8A to 8C respectively show a top view, a front view and a right side view of the chip on film of the micro light emitting diode display panel. Figures ninth A to ninth C respectively show a top view, a front view, and a right side view of the micro light emitting diode display panel using chip glass technology to install the driver. FIG. 10A shows a schematic diagram of a thin film on chip package of a driver according to another embodiment of the present invention. Figure 10B shows a side view of the chip-on-film package of Figure 10A, which is provided on the substrate and printed circuit board of the micro light emitting diode display panel of the embodiment of the present invention. Figure 11 shows a top view of the micro light emitting diode display panel.
11:基板 11: substrate
12:驅動器 12: Drive
700:薄膜覆晶封裝 700: Thin film flip chip package
711:主區域 711: main area
712:接合區 712: Joint Zone
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US20220375398A1 (en) * | 2020-12-28 | 2022-11-24 | Sitronix Technology Corp. | Driving structure for display panel |
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