KR20210078766A - Micro led display device and manufacturing method of the same - Google Patents

Abstract

A micro LED display device using a micro LED element as a light emitting element according to an embodiment of the present specification is provided. A unit pixel defined by a plurality of pixels having a micro LED element is disposed on a substrate. The unit pixel includes a plurality of pixels. Each of the pixels may further include a color conversion layer on the micro LED element. Three selected pixels among the plurality of pixels in the unit pixel are configured to emit light having wavelengths of red, blue, and green. As such, in a micro LED display device using a micro LED element as a light emitting element, the unit pixel includes a plurality of pixels to cope with the failure of the micro LED element. It is possible to provide a micro LED display device having improved reliability.

Description

MICRO LED DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME

The present invention relates to a micro LED display device and a method for manufacturing the same, and more particularly, to a transfer defect that may occur in the process of transferring a micro LED device grown on a wafer to a substrate of the micro LED display device, An object of the present invention is to provide a micro LED display device capable of minimizing deterioration in display quality of the micro LED display device, and a method for manufacturing the same.

A display device is widely used as a display screen of a notebook computer, a tablet computer, a smart phone, a portable display device, and a portable information device, in addition to a display device of a television or a monitor.

The display device may be divided into a reflective display device and a light emitting display device. The reflective display device is a display device in which natural light or light emitted from external lighting of the display device is reflected by the display device to display information. A display device is a method in which a light emitting element or a light source is embedded in a display device, and information is displayed using light generated from the built-in light emitting element or light source.

The built-in light emitting device uses a light emitting device capable of emitting various wavelengths of light, or a color filter capable of changing the wavelength of the emitted light together with a light emitting device that emits white or blue light.

In this way, a plurality of light emitting devices are disposed on a substrate of the display device to realize an image as a display device, and a driving device that supplies a driving signal or a driving current to control each light emitting device to emit light individually is used as a light emitting device. is arranged on the substrate, and the plurality of light emitting devices arranged on the substrate are interpreted according to the arrangement of the information to be displayed and displayed on the substrate.

In other words, in such a display device, a plurality of pixels are disposed, and each pixel uses a thin film transistor as a switching element as a driving element, and is connected to the thin film transistor and driven, so that each pixel is driven. Displays the image by the operation of

Representative display devices using thin film transistors include a liquid crystal display device and an organic light emitting display device. Among them, since the liquid crystal display is not a self-luminous method, a backlight unit disposed to emit light at the lower portion (rear side) of the liquid crystal display is required. Due to such an additional backlight unit, the thickness of the liquid crystal display increases, there is a limitation in implementing the display device in various designs such as flexible or circular designs, and luminance and response speed may decrease.

On the other hand, a display device having a self-light emitting element can be implemented thinner than a display device having a light source, and has the advantage of being able to implement a flexible and foldable display device.

A display device having such a self-light emitting device may include an organic light emitting display device including an organic material as a light emitting layer and a micro LED display device using a micro LED device as a light emitting device, such as an organic light emitting display device or a micro LED display device. Since the self-display device does not require a separate light source, it can be used as a thinner or various types of display devices.

However, since an organic light emitting display device using an organic material does not require a separate light source, and bad pixels due to moisture and oxygen are easily generated, various technical ideas are additionally required to minimize penetration of oxygen and moisture.

In response to the above-mentioned problem, recently, research and development on a display device using a micro light emitting diode of a fine size as a light emitting device is being conducted, and such a light emitting display device has high image quality and high reliability. Therefore, it is in the spotlight as a next-generation display device.

A micro LED device is a semiconductor light emitting device that emits light when an electric current is passed through it, and is widely used in lighting, TV, and various display devices. A micro LED device is composed of an n-type semiconductor layer, a p-type semiconductor layer, and an active layer therebetween. When a current is passed, electrons are present in the n-type semiconductor layer and holes in the p-type semiconductor layer, which combine in the active layer to emit light.

There are several technical requirements for realizing a light emitting display device in which a micro LED device is used as a light emitting device of a unit pixel. First, a micro LED device is crystallized on a semiconductor wafer substrate such as sapphire or silicon (Si), and a plurality of crystallized micro LED chips are moved to a substrate having a driving device. A sophisticated transfer process is required to position the micro LED element in position.

The micro LED device can be formed using an inorganic material, but it needs to be formed by crystallization. In order to crystallize an inorganic material such as GaN, the inorganic material must be crystallized on a substrate that can induce crystallization. As described above, the substrate capable of efficiently inducing the crystallization of the inorganic material is a semiconductor substrate, and as described above, the inorganic material must be crystallized on the semiconductor substrate.

The process of crystallizing the micro LED device is also referred to as epitaxy, epitaxial growth, or epitaxial process. Epi process refers to growth taking a specific orientation relationship on the surface of a certain crystal. In order to form the device structure of a micro LED device, GaN-based compound semiconductors must be stacked on a substrate in the form of a pn junction diode. It grows by inheriting the crystallinity of the underlying layer.

At this time, since the defect in the crystal acts as a non-radiative center in the electron-hole recombination process, in the micro LED device using photons, the crystals forming each layer This will have a decisive effect on the device efficiency.

The sapphire substrate described above is mainly used as the currently used substrate, and research activities on GaN-based substrates have been actively conducted in recent years.

As such, due to the high price of the semiconductor substrate required to crystallize the inorganic material such as GaN constituting the micro LED element on the semiconductor substrate, it is not a micro LED element as a light source used for simple lighting or backlight, but as a light emitting pixel of a display device. When a large amount of micro LED devices are used, there is a problem in that the manufacturing cost increases.

In addition, as described above, it is necessary to transfer the micro LED device formed on the semiconductor substrate to the substrate constituting the display device. In this process, it is difficult to separate the micro LED device formed on the semiconductor substrate. , there are many difficulties and problems even when properly transplanting the separated micro LED device to a desired point.

In transferring the micro LED element formed on the semiconductor substrate to the substrate realizing the display device, a method using a transfer substrate using a polymer material such as PDMS, a transfer method using electromagnetic or static electricity, or physically picking up one element at a time Various transcription methods such as transfer methods can be used, and research activities on various transcription methods are being conducted.

Such a transfer process is related to the productivity of the process for implementing the display device, and for mass production, it can be said that the method of transferring the micro LED elements one by one is inefficient.

Accordingly, a plurality of micro LED elements are separated from the semiconductor substrate by using a transfer substrate using a polymer material, and are correctly positioned on the substrate constituting the display device, particularly the driving element disposed in the thin film transistor and the pad electrode connected to the power electrode. A sophisticated transfer process or method has become necessary.

During the above-described transfer process or during the subsequent process following the transfer process, the micro LED element may move or transfer depending on conditions such as vibration or inferiority, and defects may occur such as the micro LED element is overturned and transferred. There were many difficulties in finding and recovering.

Taking the general transfer process as an example, the transfer process of the micro LED device will be described as an example. A micro LED device is formed on a semiconductor substrate, and an electrode is formed on the semiconductor layer to complete the individual micro LED device. Thereafter, the semiconductor substrate and the PDMS substrate (hereinafter referred to as a transfer substrate) are brought into contact to move the micro LED device to the transfer substrate.

In the transfer substrate, the micro LED element formed on the semiconductor substrate must be transferred from the semiconductor substrate to the transfer substrate in consideration of the distance equal to the pixel pitch of the pixel. A protrusion shape for receiving an element is protruded and arranged.

In a state in which the transfer substrate and the semiconductor substrate are in contact, the micro LED element is separated from the semiconductor substrate by irradiating a laser to the micro LED element through the back surface of the semiconductor substrate. In this case, in the process of irradiating the laser, the micro LED element is removed from the semiconductor substrate. When separated, the GaN material of the semiconductor substrate may physically expand rapidly due to the concentration of energy by the high energy of the laser, which may cause an impact. (This is called the primary warrior.)

Thereafter, the micro LED element transferred to the transfer substrate is transferred onto the substrate constituting the display device. A protective layer for insulating/protecting the thin film transistor is disposed on the substrate having the thin film transistor, and then an adhesive layer is disposed on the protective layer. do.

When a pressure is applied by bringing the transfer substrate into contact with the substrate of the display device, the micro LED element transferred to the transfer substrate is transferred to the substrate side of the display device by the adhesive layer on the above-described protective layer.

At this time, the adhesive force between the transfer substrate and the micro LED element is made smaller than that between the substrate constituting the display device and the micro LED element, so that the micro LED element on the transfer substrate is smoothly transferred to the substrate of the display device. (This is called the secondary warrior)

The semiconductor substrate and the substrate constituting the display device are basically different in size, and the substrate constituting the display device is usually large. Due to the difference in area and size, if the above-described primary and secondary transfer are repeated and performed in plurality for each region of the substrate of the display device, the micro LED element corresponding to each pixel constituting the display device can be transferred. do.

The micro LED device formed on the semiconductor substrate may be a red, blue, and green micro LED device, or a white micro LED device depending on the type thereof. In a method of realizing a pixel of a display device using a micro LED element emitting light of different wavelengths, the number of the above-described primary and secondary transfer may be further increased.

A single micro LED selected from green, blue, white, or micro LED devices having a uv wavelength is highly likely to cause problems in the above-described process when transferring using a micro LED device of three colors, each of red, green, and blue. A method of using an LED device and using a color conversion layer may also be used.

The micro LED device is composed of a compound semiconductor such as GaN, which enables high current to be injected due to the nature of the inorganic material, and thus high brightness can be realized, and has low environmental impact such as heat, moisture, and oxygen, and thus has high reliability.

In addition, since the micro LED device has an internal quantum efficiency of 90%, which is higher than that of an organic light emitting display device, it is possible to display a high-brightness image and realize a display device with low power consumption.

In addition, unlike the organic light emitting display device, since there is no need for a separate encapsulation film or encapsulation substrate for minimizing the penetration of oxygen and moisture to a level where the influence of oxygen and moisture is insignificant because inorganic materials are used, the encapsulation film or the encapsulation substrate is not required. There is an advantage in that the non-display area of the display device, which is a margin area that may be generated by the arrangement, can be minimized.

However, in the connection between the electrode disposed on the display device and the circuit board, a minimum area for disposing the pad electrode and establishing a connection between the flexible substrate and the pad electrode is required. It should be on one side.

In order to arrange the pad electrode and make a connection with the circuit board, a method of extending the wiring to the back side of the display device may be used, and a method of arranging the wiring on the side or extending the wiring through a hole in the board may be used. can

In recent years, many research activities have been conducted to solve various problems in the above-described process.

In the micro LED display device using the above-described micro LED device as a light emitting device, the micro LED device has a very small size for the process of growing the micro LED device using a wafer and transferring it to the substrate of the display device, so the process accuracy is high. There was a required problem. In addition, in order to use each device emitting light of different wavelengths as a light emitting device of a display device to implement the basic light emitting devices of red, green, and blue, it is necessary to grow them on different wafers and transfer them to the substrate of the display device. There was a problem in that there was a high need to perform a more precise process. The inventors of the present invention invented a micro LED display device and a method for manufacturing the same that can be easily repaired when a defect occurs while improving process stability for the above-mentioned problems. .

A problem to be solved according to an embodiment of the present specification is to minimize the number of steps in the micro LED transfer process by using a micro LED device of a single wavelength as a light emitting device used in a micro LED display device, thereby minimizing the defect rate. To provide a micro LED display device and a method for manufacturing the same.

Another problem to be solved according to an embodiment of the present specification is a micro LED that can be repaired when a pixel that does not emit light normally occurs due to a process of transferring a micro LED element and other problems in the process of manufacturing a micro LED display device. A display device and a method for manufacturing the same are provided.

The problems to be solved according to an embodiment of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to an embodiment of the present specification, there is provided a micro LED display including a plurality of unit pixels including a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel. The unit pixel is configured to include a plurality of sub-pixels, and at least three sub-pixels selected from among the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel emit red, blue, and green light, respectively. is composed Since three colors are implemented using at least four sub-pixels, even if a defect occurs among a plurality of sub-pixels for implementing three colors, sub-pixels of three colors can be included, so it is possible to effectively deal with defects. It is possible to provide a micro LED display device.

A method of manufacturing a micro LED display device according to another embodiment of the present specification is provided. A plurality of sub-pixels are defined on a substrate, a unit pixel is configured of the plurality of sub-pixels, and a driving device and a driving circuit corresponding to each of the plurality of sub-pixels are disposed on the substrate. A micro LED device is disposed in a defined pixel, and an electrode, etc. is disposed between the driving circuit disposed on the substrate and the micro LED device to electrically connect the micro LED device. Then, by examining the lighting of the disposed micro LED element, writing bad data on whether it is normal or defective, and arranging the color conversion layer in a unit pixel composed of a plurality of sub-pixels with reference to the written bad data, The defective data is reflected in the D-IC so that the color data for each sub-pixel is reflected and driven when driving. As described above, it is possible to provide a method of manufacturing a micro LED display device capable of coping with pixel defects, including disposing sub-pixels to replace the generated defective pixels among the plurality of sub-pixels.

According to an embodiment of the present invention, there is an effect that bad pixels can be minimized by providing unit pixels composed of a plurality of sub-pixels and configuring selected normal sub-pixels to emit light of different wavelengths.

In addition, by using a color conversion layer in the sub-pixel, a color conversion layer of a wavelength corresponding to the defective pixel is disposed in another sub-pixel and a color conversion layer corresponding to the defective pixel is used, thereby minimizing defective pixels. .

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

Since the content of the invention described in the problems to be solved above, the means for solving the problems, and the effects do not specify the essential characteristics of the claims, the scope of the claims is not limited by the matters described in the content of the invention.

1 is a schematic plan view illustrating a micro LED display device having a plurality of sub-pixels according to an embodiment of the present specification.
2 is a schematic circuit diagram illustrating a driving circuit for driving a sub-pixel according to an exemplary embodiment of the present specification.
3 is a schematic cross-sectional view taken along line I - I of FIG. 1 for explaining a sub-pixel in which a micro LED device according to an embodiment of the present specification is used.
4 is a schematic diagram for explaining a micro LED device according to an embodiment of the present specification.
5A to 5B are schematic diagrams for explaining a structure and a method for configuring a unit pixel emitting light of various wavelengths using a plurality of sub-pixels according to an embodiment of the present specification.
6A to 6B are schematic diagrams for explaining various configurations of a unit pixel including a plurality of sub-pixels according to an exemplary embodiment of the present specification.
7A is a schematic diagram for explaining a configuration of a unit pixel including bad data according to an embodiment of the present specification.
7B is a schematic diagram for explaining various configurations and utilization of sub-pixels according to another embodiment of the present specification.
8 is a schematic flowchart for explaining a method of manufacturing a micro LED display device according to an embodiment of the present specification.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are exemplary, and thus the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between the two parts unless 'directly' is used.

In the case of a description of a temporal relationship, for example, when a temporal relationship is described as 'after', 'following', 'after', 'before', etc., 'immediately' or 'directly' Unless ' is used, cases that are not continuous may be included.

In the case of a description of the signal flow relationship, for example, even in the case of 'a signal is transmitted from node A to node B', unless 'directly' or 'directly' is used, node A passes through another node. A case in which a signal is transmitted to node B may be included.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic plan view for explaining a micro LED display device having a plurality of sub-pixels according to an embodiment of the present specification, and FIG. 2 is a driving circuit for driving sub-pixels according to an embodiment of the present specification A schematic circuit diagram for

1 and 2, in the micro LED display device 100 according to an embodiment of the present invention, a display area AA having a plurality of unit pixels UP and a non-display area IA are defined. and a substrate 110 .

The unit pixel UP may be composed of a plurality of sub-pixels SP on the front surface 110a of the substrate 110 and typically emits red, blue, and green light. The sub-pixel SP may be included, but is not limited thereto, and may include a sub-pixel emitting light such as white.

The substrate 110 is a thin film transistor array substrate, and may be made of a glass or plastic material, and may be a substrate formed by bonding two or more substrates or divided into two or more layers. The non-display area IA may be defined as an area on the substrate 110 excluding the display area AA, may have a relatively narrow width, and may be defined as a bezel area.

Each of the plurality of unit pixels UP is disposed in the display area AA. In this case, each of the plurality of unit pixels UP is disposed in the display area AA to have a preset first reference pixel pitch along the X-axis direction and a preset second reference pixel pitch along the Y-axis direction. The first reference pixel pitch may be defined as a distance between the central portions of each of the adjacent unit pixels UP, and the second reference pixel pitch is similar to the first reference pixel pitch of the adjacent unit pixels UP in the reference direction. It can be defined as the distance between the central centers.

Meanwhile, the distance between the sub-pixels SP constituting the unit pixel UP may also be defined as the first reference sub-pixel pitch and the second reference sub-pixel pitch similarly to the first reference pixel pitch and the second reference pixel pitch.

In the micro LED display device 100 including the micro LED element 150 which is an LED element, the width of the non-display area IA may be smaller than the aforementioned pixel pitch or sub-pixel pitch, and may be the same as the pixel pitch or sub-pixel pitch. In the case of configuring a multi-screen display device with the micro LED display device 100 having a non-display area IA of a small length or a non-display area IA, the non-display area IA is smaller than the pixel pitch or the sub-pixel pitch, so that the bezel area is substantially It is possible to implement a multi-screen display device without

As described above, in order to realize a multi-screen display device with substantially no or minimal bezel area, the micro LED display device 100 has a first reference pixel pitch and a second reference pixel pitch within the display area AA. , the first reference sub-pixel pitch and the second reference sub-pixel pitch may be kept constant, but the display area AA is defined as a plurality of zones and the above-described pitch lengths are different in each zone, but the non-display area By making the pixel pitch of the area adjacent to (IA) wider than the other areas, the size of the bezel area can be made smaller than the pixel pitch.

In this way, since the micro LED display device 100 having different pixel pitches may cause distortion to the image, image processing is performed in a manner of sampling the image data by comparing the image data with an adjacent area in consideration of the set pixel pitch. The bezel area can be minimized while minimizing distortion.

However, to minimize the non-display area IA, a pad area for connection with a circuit unit capable of supplying power and data signals to and from the unit pixel UP having the micro LED element 150, and a drive IC for driving, etc. A minimum area is required for

With reference to FIG. 2 , the configuration and circuit structure of the sub-pixels SP constituting the unit pixels UP of the micro LED display device 100 will be described. The driving lines are provided on the front surface of the substrate 110 to supply signals necessary for each of the plurality of sub-pixels SP. The pixel driving lines according to an embodiment of the present invention include a plurality of gate lines GL, a plurality of data lines DL, a plurality of driving power lines DPL, and a plurality of common power lines CPL.

Each of the plurality of gate lines GL is provided on the front surface of the substrate 110 , and extends long along the first horizontal axis direction X of the substrate 110 at regular intervals along the second horizontal axis direction Y of the substrate 110 . are spaced apart by

The plurality of data lines DL are provided on the front surface of the substrate 110 to intersect the plurality of gate lines GL, and extend along the second horizontal axis direction Y of the substrate 110 and extend in the first horizontal direction. They are spaced apart at regular intervals along the axial direction (X).

The plurality of driving power lines DPL are provided on the substrate 110 to be parallel to each of the plurality of data lines DL, and may be formed together with each of the plurality of data lines DL. Each of the plurality of driving power lines DPL supplies driving power provided from the outside to the adjacent sub-pixels SP.

The plurality of common power lines CPL are provided on the substrate 110 to be parallel to each of the plurality of gate lines GL, and may be formed together with each of the plurality of gate lines GL. Each of the plurality of common power lines CPL supplies a common power provided from the outside to the adjacent sub-pixels SP.

Each of the plurality of sub-pixels SP is provided in a sub-pixel area defined by the gate line GL and the data line DL. Each of the plurality of sub-pixels SP may be defined as an area of a minimum unit in which actual light is emitted.

At least three sub-pixels SP adjacent to each other may constitute one unit pixel UP for color display. For example, one unit pixel UP includes red, green, and blue sub-pixels SP adjacent to each other along the first horizontal axis direction X, and includes a white sub-pixel SP to improve luminance. It may include more.

Optionally, each of the plurality of driving power lines DPL may be provided for each of the plurality of unit pixels UP. In this case, at least three sub-pixels SP constituting each unit pixel UP share one driving power line DPL. Accordingly, the number of driving power lines for driving each sub-pixel SP may be reduced, and the aperture ratio of each unit pixel UP may be increased by the decreased number of driving power lines, or each unit pixel UP may be reduced. can reduce the size of

Each of the plurality of sub-pixels SP according to an embodiment of the present invention includes a driving circuit PC and a micro LED device 150 .

The driving circuit PC is provided in a circuit region defined in each sub-pixel SP and is connected to the adjacent gate line GL, the data line DL, and the driving power line DPL. The driving circuit PC is based on the driving power supplied from the driving power line DPL, and in response to a scan pulse from the gate line GL, the micro LED device 150 according to a data signal from the data line DL. ) to control the current flowing through it. The driving circuit PC according to an embodiment of the present invention includes a switching thin film transistor T1 , a driving thin film transistor T2 , and a capacitor Cst.

The switching thin film transistor T1 includes a gate electrode connected to the gate line GL, a first electrode connected to the data line DL, and a second electrode connected to the gate electrode N1 of the driving thin film transistor T2 . Here, the first and second electrodes of the switching thin film transistor T1 may be a source electrode or a drain electrode depending on the direction of the current. The switching thin film transistor T1 is switched according to a scan pulse supplied to the gate line GL and supplies a data signal supplied to the data line DL to the driving thin film transistor T2 .

The driving thin film transistor T2 is turned on by the voltage supplied from the switching thin film transistor T1 and/or the voltage of the capacitor Cst to control the amount of current flowing from the driving power line DPL to the micro LED device 150 . Control. To this end, the driving thin film transistor T2 according to an embodiment of the present invention includes a gate electrode connected to the second electrode N1 of the switching thin film transistor T1 , a drain electrode connected to the driving power line DPL, and a micro and a source electrode connected to the LED element 150 . The driving thin film transistor T2 controls the data current flowing from the driving power line DPL to the micro LED element 150 based on the data signal supplied from the switching thin film transistor T1 to emit light of the micro LED element 150 . to control

The capacitor Cst is provided in an overlapping region between the gate electrode N1 and the source electrode of the driving thin film transistor T2 to store a voltage corresponding to a data signal supplied to the gate electrode of the driving thin film transistor T2, and store the stored voltage. to turn on the driving thin film transistor T2.

Optionally, the driving circuit PC may further include at least one compensation thin film transistor for compensating for a threshold voltage change of the driving thin film transistor T2 , and further include at least one auxiliary capacitor. The driving circuit PC may additionally receive compensation power such as an initialization voltage according to the number of thin film transistors and auxiliary capacitors. Accordingly, since the driving circuit PC according to an embodiment of the present invention drives the micro LED device 150 through the current driving method in the same manner as each sub-pixel of the organic light emitting display device, a known pixel of the organic light emitting display device. circuit can be changed.

The micro LED device 150 is mounted on each of the plurality of sub-pixels SP. The micro LED device 150 is electrically connected to the driving circuit PC and the common power line CPL of the corresponding sub-pixel SP, and thus the common power line ( CPL) to emit light. The micro LED device 150 according to an embodiment of the present invention may be an optical device or a light emitting diode chip emitting any one of red light, green light, blue light, and white light. Here, the light emitting diode chip may have a scale of 1 to 100 micrometers, but may have a size smaller than the size of the remaining light emitting regions except for the circuit region occupied by the driving circuit PC among the sub-pixel regions, which is not limited thereto.

3 is a schematic cross-sectional view taken along line I - I of FIG. 1 for explaining a sub-pixel in which a micro LED device according to an embodiment of the present specification is used. Hereinafter, it will be described with reference to FIG. 3, but will be described in conjunction with the previous drawings.

Each sub-pixel SP of the display device according to an embodiment of the present invention includes a protective layer 113 , a micro LED device 150 , planarization layers 115 - 1 and 115 - 2 , a pixel electrode PE, and a common electrode. (CE).

First, although the thickness of the substrate 110 is shown relatively thin in FIG. 3, the thickness of the substrate 110 may have a relatively very thick thickness than the entire thickness of the layer structure provided on the substrate 110, It may be a substrate composed of a plurality of layers or to which a plurality of substrates are bonded.

The driving circuit PC includes a switching thin film transistor T1 , a driving thin film transistor T2 , and a capacitor C . Since the driving circuit PC is the same as described above, a detailed description thereof will be omitted, and the structure of the driving thin film transistor T2 will be described below as an example.

The driving thin film transistor T2 includes a gate electrode GE, a semiconductor layer SCL, a source electrode SE, and a drain electrode DE.

The gate electrode GE is disposed on the substrate 110 together with the gate line GL. The gate electrode GE is covered by the gate insulating layer 112 . The gate insulating layer 112 may be formed of a single layer or a plurality of layers made of an inorganic material, and may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or the like.

The semiconductor layer SCL is provided in the form of a predetermined pattern (or island) on the gate insulating layer 112 to overlap the gate electrode GE. The semiconductor layer SCL may be formed of a semiconductor material made of any one of amorphous silicon, polycrystalline silicon, oxide, and an organic material, but is not limited thereto.

The source electrode SE is disposed to overlap one side of the semiconductor layer SCL. The source electrode SE is disposed together with the data line DL and the driving power line DPL.

The drain electrode DE overlaps the other side of the semiconductor layer SCL and is disposed to be spaced apart from the source electrode SE. The drain electrode DE is disposed together with the source electrode SE, and is branched or protruded from the adjacent driving power line DPL.

Additionally, the switching thin film transistor T1 constituting the driving circuit PC is disposed in the same structure as the driving thin film transistor T2 . In this case, the gate electrode of the switching thin film transistor T1 branches or protrudes from the gate line GL, the first electrode of the switching thin film transistor T1 branches or protrudes from the data line DL, and the switching thin film transistor T1 . ) is connected to the gate electrode GE of the driving thin film transistor T2 through a via hole provided in the gate insulating layer 112 .

The protective layer 113 is provided on the entire surface of the substrate 110 to cover the sub-pixel SP, that is, the driving circuit PC. The protective layer 113 provides a flat surface while protecting the driving circuit PC. The protective layer 113 according to an embodiment of the present invention may be made of an organic material such as benzocyclobutene or photo acryl, but is preferably made of a photoacrylic material for convenience of the process.

The micro LED device 150 according to an embodiment of the present invention may be disposed using an adhesive member 114 on the protective layer 113 . Alternatively, it may be disposed in a concave portion provided on the protective layer 113, and the inclined surface due to the concave portion in the protective layer 113 advances the light emitted from the micro LED device 150 in a specific direction to increase luminous efficiency. can play a role in improving it.

The micro LED device 150 is electrically connected to the driving circuit PC and the common power line CPL, so that light is emitted by the current flowing from the driving circuit PC, that is, the driving thin film transistor T2 to the common power line CPL. do. The micro LED device 150 according to an embodiment of the present invention includes a light emitting layer (EL), a first electrode (or anode terminal) (E1), and a second electrode (or a cathode terminal) (E2).

The micro LED device 150 emits light according to recombination of electrons and holes according to a current flowing between the first electrode E1 and the second electrode E2 .

The planarization layers 115 - 1 and 115 - 2 are disposed on the protective layer 113 to cover the micro LED device 150 . That is, the planarization layers 115-1 and 115-2 have a thickness sufficient to cover the entire surface of the protective layer 113, the place where the micro LED device 150 is disposed, and the rest of the front surface of the protective layer ( 113) is placed on the

The planarization layers 115-1 and 115-2 may consist of one layer, and as shown in the figure, the planarization layer ( 115-1,115-2).

As such, the planarization layers 115 - 1 and 115 - 2 provide a flat surface on the passivation layer 113 . In addition, the planarization layers 115 - 1 and 115 - 2 serve to fix the position of the micro LED device 150 .

The pixel electrode PE connects the first electrode E1 of the micro LED device 150 to the drain electrode DE of the driving thin film transistor T2, and according to the configuration of the thin film transistor T2, the source electrode SE) It is also possible to configure a connection to Such a pixel electrode PE may be defined as an anode electrode. The pixel electrode PE according to an embodiment of the present invention is provided on the entire surface of the planarization layers 115-1 and 115-2 overlapping the first electrode E1 of the micro LED device 150 and the driving thin film transistor T2. do. The pixel electrode PE is the drain electrode DE or the source electrode of the driving thin film transistor T2 through the first circuit contact hole CCH1 provided through the passivation layer 113 and the planarization layers 115 - 1 and 115 - 2 . It is electrically connected to SE and is electrically connected to the first electrode E1 of the micro LED device 150 through the electrode contact hole ECH provided in the planarization layers 115 - 1 and 115 - 2 . Accordingly, the first electrode E1 of the micro LED device 150 is electrically connected to the drain electrode DE or the source electrode SE of the driving thin film transistor T2 through the pixel electrode PE.

In the connection relationship between the source electrode SE and the drain electrode DE, the drain electrode DE is illustrated as being connected to the pixel electrode PE, but a configuration in which the pixel electrode PE and the source electrode SE are connected is also possible. And it can be said that it is the choice of a person skilled in the art.

The pixel electrode PE may be made of a transparent conductive material when the display device is a top emission type, and may be formed of a light reflective conductive material when the display device is a bottom emission type. Here, the transparent conductive material may be indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto. The light reflective conductive material may be, but is not limited to, Al, Ag, Au, Pt, Cu, or the like. The pixel electrode PE made of the light reflective conductive material may be formed of a single layer including the light reflective conductive material or a multi-layer in which the single layer is stacked.

The common electrode CE electrically connects the second electrode E2 of the micro LED device 150 and the common power line CPL, and may be defined as a cathode electrode. The common electrode CE is provided on the entire surface of the planarization layers 115 - 1 and 115 - 2 overlapping the second electrode E2 of the micro LED device 150 and overlapping the common power line CPL. Here, the common electrode CE may be made of the same material as the pixel electrode PE.

One side of the common electrode CE according to an embodiment of the present invention penetrates through the gate insulating layer 112 overlapping the common power line CPL, the protective layer 113 and the planarization layers 115 - 1 and 115 - 2 . It is electrically connected to the common power line CPL through the second circuit contact hole CCH2 provided. The other side of the common electrode CE according to an embodiment of the present invention has an electrode contact hole ECH provided in the planarization layers 115-1 and 115-2 to overlap the second electrode E2 of the micro LED device 150. It is electrically connected to the second electrode E2 of the micro LED element 150 through the. Accordingly, the second electrode E2 of the micro LED device 150 is electrically connected to the common power line CPL through the common electrode CE.

The pixel electrode PE and the common electrode CE according to an embodiment of the present invention include planarization layers 115 - 1 and 115 including the first and second circuit contact holes CCH1 and CCH2 and the electrode contact hole ECH. -2) may be simultaneously prepared by a deposition process of depositing an electrode material thereon, and an electrode patterning process using a photolithography process and an etching process. Accordingly, in one embodiment of the present invention, since the pixel electrode PE and the common electrode CE connecting the micro LED device 150 to the driving circuit PC can be simultaneously disposed, the electrode connection process can be simplified. In addition, the process time for connecting the micro LED element 150 and the driving circuit PC can be greatly shortened, thereby improving the productivity of the display device.

In the display device according to an embodiment of the present invention, the micro LED device 150 mounted on each sub-pixel SP may be fixed by an adhesive member 114 .

The adhesive member 114 primarily fixes the micro LED element 150 of each sub-pixel SP. The adhesive member 114 according to an embodiment of the present invention is in contact with the lower portion of the micro LED device 150 and is used for implanting while minimizing misalignment of the arrangement position during the mounting process of the micro LED device 150 . By allowing the micro LED device 150 to be smoothly separated from the intermediate substrate, a defect in the implantation process of the micro LED device 150 can be minimized.

The adhesive member 114 according to an embodiment of the present invention is dotted on each sub-pixel SP and spread by the pressing force applied during the mounting process of the light emitting device to be adhered to the lower portion of the micro LED device 150 . can Accordingly, the position of the micro LED device 150 may be primarily fixed by the adhesive member 114 . Therefore, according to the present embodiment, the mounting process of the light emitting device is performed by simply attaching the micro LED device 150 to the surface, thereby greatly reducing the mounting process time of the light emitting device.

In addition, the adhesive member 114 is interposed between the protective layer 113 and the planarization layers 115 - 1 and 115 - 2 , and is interposed between the micro LED device 150 and the protective layer 113 . The adhesive member 114 according to this other example is coated on the entire front surface of the protective layer 113 to a predetermined thickness, and a portion of the adhesive member 114 coated on the front surface of the protective layer 113 in which contact holes are to be provided is a contact portion. It is removed upon placement of the holes. Accordingly, an embodiment of the present invention shortens the process time of disposing the adhesive member 114 by coating the adhesive member 114 on the entire entire surface of the protective layer 113 with a constant thickness immediately before the mounting process of the light emitting device. can do it

In one embodiment of the present invention, since the adhesive member 114 is provided on the entire surface of the protective layer 113 , the planarization layers 115 - 1 and 115 - 2 of this example are provided to cover the adhesive member 114 .

In another embodiment of the present invention, there is a recess for separately accommodating the micro LED device 150 , and may be located inside the recess through an adhesive member 114 . However, the recess for accommodating the above-described micro LED device 150 may be deleted according to conditions of various processes for realizing the display device.

The mounting process of the light emitting device according to an embodiment of the present invention may include a process of mounting a red, green, blue, or white device selected from among red, green, blue, and white devices on each of the red sub-pixels SP, and on the mounted light emitting device The process of disposing a color filter layer (CF), which is a color conversion layer, may be further included.

In this case, the substrate 110 includes a color filter layer CF and a black matrix BM overlapping each sub-pixel SP.

The light emitting device according to an embodiment of the present specification has a structure in which a blue micro LED device 150 emitting blue wavelength is used, and quantum dot particles are mixed in a color filter layer (CF) used as a color conversion layer.

Because the micro LED device 150 of a single wavelength is used, there is no need to transfer each of the micro LED devices 150 of different wavelengths, and the micro LED device 150 of the same wavelength is used in batches for color conversion. Although the color filter layer CF is used, quantum dots (quantum dot) particles are mixed with the color filter layer CF to maintain light efficiency, but the micro LED display device 100 can be provided through a simplified process.

Due to the simplified transfer process, defects that may occur in the sub-pixels SP can be minimized, and defects occur among the plurality of sub-pixels SP because the unit pixel UP is composed of the plurality of sub-pixels SP. Even so, since the color filter layer CF can be implemented using any one sub-pixel SP constituting the unit pixel UP, it is possible to provide a micro LED display device capable of coping with defects. The above-described configuration will be described later.

4 is a schematic diagram for explaining a micro LED device according to an embodiment of the present specification.

The micro LED device 150 according to an embodiment of the present invention includes an emission layer (EL), a first electrode (E1), a second electrode (E2), and an insulating film (PAS), and the emission layer (EL) is a first semiconductor It includes a layer 151 , an active layer 152 , and a second semiconductor layer 153 . The micro LED device 150 emits light according to recombination of electrons and holes according to a current flowing between the first electrode E1 and the second electrode E2 .

The first semiconductor layer 151 may be a p-type semiconductor layer and the second semiconductor layer 153 may be an n-type semiconductor layer, but for convenience, the first semiconductor layer 151 and the second semiconductor layer 153 will be described. Also, according to the first electrode E1 and the second electrode E2 or the electrical connection relationship, that is, depending on the semiconductor layer making the electrical connection, it may be called a p-type electrode or an n-type electrode, but likewise, for convenience, the first or second electrode I will explain with 2 electrodes. In addition, in this specification, the first semiconductor layer 151 and the second semiconductor layer 153 will be described as a p-type semiconductor layer and an n-type semiconductor layer, respectively, but the first semiconductor layer 151 and the second semiconductor layer 153 are The n-type semiconductor layer and the p-type semiconductor layer may be respectively opposite.

The first semiconductor layer 151 is provided on the active layer 152 and provides holes to the active layer 152 . The first semiconductor layer 153 according to an embodiment of the present invention may be made of a p-GaN-based semiconductor material, and the p-GaN-based semiconductor material may be GaN, AlGaN, InGaN, AlInGaN, or the like. Here, Mg, Zn, Be, or the like may be used as an impurity used for doping the second semiconductor layer 153 .

The second semiconductor layer 153 provides electrons to the active layer 152 . The second semiconductor layer 153 according to an embodiment of the present invention may be made of an n-GaN-based semiconductor material, and the n-GaN-based semiconductor material may be GaN, AlGaN, InGaN, AlInGaN, or the like. Here, as the impurity used for doping the second semiconductor layer 151 , Si, Ge, Se, Te, or C may be used.

The active layer 152 is provided on the second semiconductor layer 153 . The active layer 152 has a multi-quantum well (MQW) structure having a well layer and a barrier layer having a higher band gap than the well layer. The active layer 152 according to an embodiment of the present invention may have a multi-quantum well structure such as InGaN/GaN.

The first electrode E1 is electrically connected to the first semiconductor layer 151 and is connected to the drain electrode DE or the source electrode SE of the driving transistor T2 which is a driving thin film pixel, and is connected to the second electrode E2 ) is connected to the common power line CPL.

The above-described first electrode E1 may be a p-type electrode, and the second electrode E2 may be an n-type electrode. This can be classified according to whether electrons or holes are supplied, that is, whether electrically connected to the p-type semiconductor layer or connected to the n-type semiconductor layer, but in this specification, the first electrode E1 and the second electrode ( E2) will be described.

Each of the first and second electrodes E1 and E2 according to an embodiment of the present invention is one of a metal material such as Au, W, Pt, Si, Ir, Ag, Cu, Ni, Ti, or Cr and an alloy thereof It may be made of a material including the above. Each of the first and second electrodes E1 and E2 according to another embodiment may be made of a transparent conductive material, and the transparent conductive material may be Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO), etc. However, the present invention is not limited thereto.

The insulating layer PAS is disposed to cover the outside of the micro LED device 150 and has an insulating layer open region P-Open to open at least a portion of the first electrode E1 and the second electrode E2 . The face layer PAS may be formed of a material such as SiNx or SiOx and is disposed to cover the active layer 152 .

The insulating film PAS is not intended when the electrodes are disposed so that the first electrode E1 and the second electrode E2 of the micro LED device 150 and the pixel electrode PE or the common electrode CE are electrically connected. Make sure that no electrical connections are made between the elements.

Additionally, each of the second semiconductor layer 153 , the active layer 152 , and the first semiconductor layer 151 may be a micro LED device 150 formed by sequentially stacking on a semiconductor substrate. Here, the semiconductor substrate includes a semiconductor material such as a sapphire substrate or a silicon substrate. This semiconductor substrate is used as a growth substrate for growing each of the second semiconductor layer 153 , the active layer 152 , and the first semiconductor layer 151 , and then is removed from the second semiconductor layer 153 by a substrate separation process. can be separated. Here, the substrate separation process may be a laser lift off or a chemical lift off. Accordingly, as the semiconductor substrate for growth is removed from the micro LED device 150 , the micro LED device 150 may have a relatively thin thickness, and thus may be accommodated in each sub-pixel SP.

5A to 5B are schematic diagrams for explaining a structure and a method for configuring a unit pixel emitting light of various wavelengths using a plurality of sub-pixels according to an embodiment of the present specification.

The unit pixel UP includes at least three sub-pixels SP. Each sub-pixel SP includes a micro LED device 150 and, according to an embodiment of the present specification, may be a micro LED device 150 emitting light of a blue wavelength.

In order to have the sub-pixels SP emitting light of red, green, and blue wavelengths, each of the sub-pixels SP may be filled with a color filter CF with a color conversion layer. Each sub-pixel SP includes a micro LED device 150 on the substrate 110 , and may be surrounded by barrier ribs to prevent color mixing between the sub-pixels SP.

As an embodiment of the present specification, the barrier rib may be a black matrix (BM) and may further include a reflective layer reflecting light on the surface of the black matrix (BM).

The color filter (CF) is placed on the sub-pixel (SP) surrounded by the black matrix (BM) after being mixed with quantum dot particles and discharged from each nozzle in the printing device. BM) and may be disposed to cover the micro LED device 150 .

Since the micro LED device 150 according to an embodiment of the present specification may be a device of a blue wavelength, a blue color filter may be disposed or omitted, but this may be determined by a person skilled in the art.

Since the unit pixel UP includes at least three or more sub-pixels SP, it may further include at least one dummy pixel (D-SP, Spare, hereinafter referred to as S).

5B is a sub-pixel that does not light due to a transfer process or a defect in the device itself among the micro LED devices 150 in the plurality of sub-pixels SP constituting the unit pixel UP according to an embodiment of the present specification; An example of repairing the defect by arranging a color filter (CF) corresponding to the sub-pixel (SP) that is not lit due to a defect in the above-described dummy pixel (S) is shown when there is an SP). The color filter CF is disposed by driving a nozzle corresponding to the dummy pixel S among the nozzles in the device.

In other words, when a defect occurs that the micro LED device 150 does not emit light in the unit pixel UP defined by the plurality of sub-pixels SP, the dummy pixel S included in the unit pixel UP. ) to replace the defective by disposing a color filter corresponding to the defective pixel.

That is, the plurality of sub-pixels SP included in the unit pixel UP include sub-pixels SP emitting light having a wavelength of red, blue, or green, and a defective sub-pixel among the sub-pixels SP. (SP) is repaired using the dummy pixel (S).

The above-described defects include all cases in which the electrode connection is not smooth because the micro LED element 150 is lost or twisted in the process of transferring the micro LED element 150 to the substrate 110, and the micro LED element Even if the sub-pixel SP in which 150 is lost is included in the unit pixel UP, the sub-pixel SP emitting red, green, and blue light may be secured.

In the above-described configuration, the number of dummy pixels S included in the unit pixel UP may include a plurality of dummy pixels S according to a high and low process defect rate.

When the defect rate of the process is very low, the dummy pixel S may be used as an auxiliary pixel to increase the white balance or light efficiency of the micro LED display device 100 , and the configuration thereof will be described later.

6A to 6B are schematic diagrams for explaining various configurations of a unit pixel including a plurality of sub-pixels according to an exemplary embodiment of the present specification.

In the exemplary embodiment of the present specification, the unit pixel UP includes a plurality of sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6. The unit pixel UP includes a sub-pixel SP emitting light of red, green, and blue wavelengths, and includes a sub-pixel SP emitting light of each of red, green, and blue wavelengths and a corresponding sub-pixel SP. include more

The sub-pixel SP emitting light of each of the red, green, and blue wavelengths and the corresponding sub-pixel SP are dummy pixels and include substantially the same color filter layer as the sub-pixels SP of the respective red, green, and blue wavelengths. In addition, when a defect is detected in the sub-pixels SP of red, green, and blue, light may be emitted instead of the sub-pixels SP of the corresponding color.

This is because each of the sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6 is sequentially scanned to the first gate line G1 and the second gate line G2, and the first data line D1 and the second data line are sequentially scanned. Each of the sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6 is configured to be individually driven according to the data signal applied from the line D2, and each of the sub-pixels SP1, SP2, SP3, SP4, For the matrix data for the setting of SP5, SP6), the lighting test is performed at the stage of arranging the sub-pixels (SP1, SP2, SP3, SP4, SP5, SP6), and information on normal and defective inspection results is provided to the individual D-IC It is stored in the chip so that it can be driven by reference in the step of driving the display device.

According to another exemplary embodiment of the present specification, the unit pixel UP may include four sub-pixels SP1, SP2, SP3, and SP4. This is a configuration including at least one dummy pixel sub-pixel SP4 in addition to the red, green, and blue sub-pixels SP1, SP2, and SP3, and the red, green, and blue sub-pixels SP1, SP2, and SP3. If a defect occurs in the process of arranging , the defective pixel may be dealt with by arranging a color conversion layer of a color corresponding to the generated defective sub-pixel in the sub-pixel SP4 disposed as a dummy pixel. The defective data for the configuration of the unit pixel UP may be stored in individual D-ICs and may be driven by reference in the step of driving the display device.

7A is a schematic diagram for explaining a configuration of a unit pixel including bad data according to an embodiment of the present specification. The configuration of the unit pixel UP configured according to the bad data according to an exemplary embodiment of the present specification will be described with reference to FIG. 7A , but will be described with reference to the previous drawing ( FIG. 6B ).

The unit pixel UP is disposed in each of the sub-pixels SP1, SP2, SP3, and SP4 of the red (R), green (G), and blue (B) color conversion layers. Any one of the four sub-pixels may be a dummy pixel S without a color filter layer, and may include a first gate line G1, a second gate line G2, a first data line D1, and a second data line. The position of the color filter and the dummy corresponding to each of the sub-pixels SP1, SP2, SP3, and SP4 located on the line D2 may be arranged in various ways as shown in FIG. 7A , which is a neighboring unit pixel ( UP) may be arranged in various ways in consideration of color arrangement of neighboring unit pixels UP in order to minimize color deviation from the UP.

7B is a schematic diagram for explaining various configurations and uses of sub-pixels according to another embodiment of the present specification. As shown in FIG. 7B , according to an exemplary embodiment of the present specification, a plurality of sub-pixels SP1, SP2, SP3, and SP4 constituting the unit pixels UP 2-1, UP 2-2, UP 2-3 A color filter of the same color may be disposed on at least two selected unit pixels (2 of UP 2-1, UP 2-2, and UP 2-3). The unit pixels (2 out of UP 2-1, UP 2-2, and UP 2-3) with red, blue, and green color filters arranged additionally can be used to further emphasize the white balance of the display device. It can be used to express richer colors with pixels.

The various configurations of the unit pixel (UP) shown in FIG. 7B are red, green, and blue by disposing color filters of red, green, and blue when the sub-pixels of all unit pixels are normal when the lighting test is performed after the process of transferring the micro LED device. In addition to constituting unit pixels of , green, and blue, color filter layers of red, green, and blue are sequentially disposed on the remaining sub-pixels to further enrich color expression of the display device or to further increase white balance.

8 is a schematic flowchart for explaining a method of manufacturing a micro LED display device according to an embodiment of the present specification. Referring to FIG. 8 , a method of manufacturing the micro LED display device is described. A driving element and a driving circuit are arranged on a substrate to correspond to each of the plurality of sub-pixels. A plurality of sub-pixels is defined in a unit pixel, and a micro LED element is disposed in each sub-pixel, and the driving circuit and the micro LED element are connected by arranging electrodes.

The micro LED device may be disposed through a process of transferring using an adhesive layer on the planarization layer disposed to cover the driving circuit, and the electrical connection between the micro LED device and the driving circuit is performed by disposing a contact hole on the planarization layer and corresponding By disposing an electrode on the contact hole, an electrical connection between the driving circuit and the micro LED element can be achieved.

After the arrangement of the micro LED element and the electrical connection with the driving circuit are established, the micro LED element is normally transferred to the substrate and the micro LED element is operated normally. It tests whether it is normal or bad, and writes bad data for pixel information corresponding to the bad micro LED device.

Thereafter, a color conversion layer is disposed to emit light of red, green, and blue wavelengths to a plurality of sub-pixels constituting a unit pixel according to the detected defective data. In case the micro LED device is a blue LED device, the color conversion of blue wavelengths Layers may be omitted.

A color conversion layer is disposed to emit red, blue, and green wavelengths to a plurality of sub-pixels included in the unit pixel with reference to the defective data, and a color conversion layer corresponding to the defective pixel is used using a dummy pixel included in the unit pixel. is separately placed in the dummy pixel.

The dummy pixel is one of a plurality of sub-pixels included in a unit pixel that are disposed together in the process of disposing the micro LED device, and may be one of a plurality of sub-pixels determined to be normal as a result of a lighting test.

After arranging the color conversion layer on the micro LED element (micro LED element found to be normal) with reference to the defective data, the arrangement information is reflected in the D-IC, and then driven with reference when driving the micro LED display device make it possible

In this way, it is possible to determine whether the micro LED element is normal, and based on the determined information, a color conversion layer for each unit pixel can be arranged to repair defects that may occur in the process of transferring the micro LED element. It is possible to provide a manufacturing method that minimizes the

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100: micro LED display device
110: substrate
112: gate insulating layer
113: protective layer
114: adhesive member
115-1,115-2: planarization layer
117: wiring electrode
150: micro LED
UP: unit pixel
SP: sub-pixel

Claims (12)

A micro LED display device having a unit pixel including a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel,
at least three sub-pixels selected from the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel
A micro LED display device configured to emit red, blue and green light, respectively. According to claim 1,
At least three sub-pixels of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel include a micro LED device disposed thereon. 3. The method of claim 2,
A micro LED display device further comprising a color conversion layer on the micro LED element, wherein the color conversion layer is a color conversion layer of red, blue, and green, respectively. 4. The method of claim 3,
The micro LED display device further includes a barrier rib surrounding the micro LED element, wherein the color conversion layer covers the micro LED element and is disposed to fill an inside of the barrier rib. 4. The method of claim 3,
The first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel all include the micro LED element, and the color conversion layers of at least two sub-pixels have the same color. Device. disposing a driving device and a driving circuit on a substrate in which at least one unit pixel including a plurality of sub-pixels is defined;
disposing a micro LED device in a sub-pixel and connecting the driving circuit and the micro LED device;
writing defective data by checking the lighting of the micro LED device;
disposing a color conversion layer with reference to the defective data; and
A method of manufacturing a micro LED display device comprising the step of reflecting defective data to the D-IC. 7. The method of claim 6,
disposing a micro LED device in the sub-pixel and connecting the driving circuit and the micro LED device;
The method of manufacturing a micro LED display device further comprising the step of disposing a planarization layer covering the driving circuit. 8. The method of claim 7,
The step of connecting the driving circuit and the micro LED device; further comprising the step of connecting the micro LED device and the driving circuit by disposing a contact hole in the planarization layer and a connection electrode. 8. The method of claim 7,
disposing a micro LED device in the sub-pixel; the method further comprising disposing an adhesive layer on the planarization layer and disposing a micro LED device. 7. The method of claim 6,
The method of manufacturing a micro LED display device comprising the step of measuring whether or not the micro LED device emits light and the light emission intensity of each sub-pixel by applying a current to a driving circuit by examining the lighting of the micro LED device. 7. The method of claim 6,
disposing a micro LED device in the sub-pixel and connecting the driving circuit and the micro LED device;
The method of manufacturing a micro LED display device further comprising disposing a micro LED element in at least one dummy sub-pixel. 12. The method of claim 11,
disposing a color conversion layer with reference to the defective data; the method further comprising disposing a color conversion layer corresponding to the detected defective sub-pixel in the dummy sub-pixel.

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