KR20190036198A - Organic light emitting display device - Google Patents

Abstract

Disclosed, in the present specification, is an organic light emitting display device. The organic light emitting display device can comprise: a display area having a pixel and a pixel circuit associated with the pixel; a non-display area surrounding the display area; and a damage detection wiring arranged in the non-display area and provided to detect damage to the non-display area.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light-

The present invention relates to an organic light emitting display.

The image display device that realizes various information on the screen is a core technology of the information communication age and it is becoming thinner, lighter, more portable and higher performance. Accordingly, an organic light emitting display device for displaying an image by controlling the amount of light emitted from the organic light emitting device has attracted attention.

The organic light emitting device is advantageous in that it can be made thin as a self-luminous device using a thin light emitting layer between electrodes. A general organic light emitting display has a structure in which a pixel driving circuit and an organic light emitting element are formed on a substrate, and light emitted from the organic light emitting element passes through a substrate or a barrier layer to display an image.

Various display devices including an organic light emitting display device can prevent penetration and / or propagation of moisture in various ways because the performance such as long-term reliability may be deteriorated when moisture permeation occurs. In particular, various structures for preventing water penetration along the wiring of the outer part are studied / applied.

SUMMARY OF THE INVENTION It is an object of the present invention to propose a damage detection structure of an organic light emitting display. The problems of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to an embodiment of the present invention, an organic light emitting display is provided. The OLED display includes: a display region having a pixel and a pixel circuit associated with the pixel; A non-display area surrounding the display area; And a damage detection wiring disposed in the non-display area and adapted to detect damage to the non-display area.

The details of other embodiments are included in the detailed description and drawings.

Embodiments of the present invention can provide a display device with improved reliability degradation due to inorganic layer damage. In addition, embodiments of the present disclosure can provide a structure that can easily detect damage to the inorganic layer. Therefore, the embodiments of the present invention can provide a display device with increased reliability and production efficiency. The effects according to the embodiments of the present invention are not limited by the contents exemplified above, and more various effects are included in the specification.

Figure 1 illustrates an exemplary display device that may be included in an electronic device.
2 is a cross-sectional view schematically showing a display region and a non-display region of a display device according to an embodiment of the present invention.
3A to 3C are diagrams showing a damage detection structure / method of an organic light emitting display according to an embodiment of the present invention.
4A to 4D are views showing various embodiments of damage detection wiring according to an embodiment of the present invention.

Brief Description of the Drawings The advantages and features of the present disclosure, and how to accomplish them, will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise. In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions. An element or layer is referred to as being another element or layer " on ", including both intervening layers or other elements directly on or in between. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; intervening " or that each component may be " connected, " " coupled, " or " connected " through other components.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

The sizes and thicknesses of the individual components shown in the figures are shown for convenience of explanation and the present invention is not necessarily limited to the size and thickness of the components shown. Various embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

Figure 1 illustrates an exemplary display device that may be included in an electronic device.

Referring to FIG. 1, the display device 100 includes at least one active area, and an array of pixels is formed in the display area. One or more inactive areas may be disposed around the display area. That is, the non-display area may be adjacent to one or more sides of the display area. In Fig. 1, the non-display area surrounds a display area of a rectangular shape. However, the shape of the display region and the shape / arrangement of the non-display region adjacent to the display region are not limited to the example shown in Fig. The display area and the non-display area may be in a form suitable for the design of the electronic device on which the display device 100 is mounted. Illustrative forms of the display area are pentagonal, hexagonal, circular, oval, and the like.

Each pixel in the display area can be associated with a pixel circuit. The pixel circuit may include at least one switching transistor and at least one driving transistor on a backplane. Each pixel circuit may be electrically connected to a gate line and a data line to communicate with one or more driving circuits such as a gate driver and a data driver located in the non-display area.

The driving circuit may be implemented with a thin film transistor (TFT) in the non-display region, as shown in FIG. This driving circuit may be referred to as a gate-in-panel (GIP). In addition, some components, such as a data driver IC, are mounted on a separate printed circuit board, and circuit films such as flexible printed circuit boards (FPCB), chip-on-film (COF), tape- (Pad / bump, pin, etc.) disposed in the non-display area. The non-display area may be bent together with the connection interface so that the printed circuit (COF, PCB, etc.) may be positioned behind the display device 100.

The display device 100 may further include a power controller that supplies various voltages or currents to the pixel circuit, a data driver, a gate driver, or the like, or controls the supply thereof. Such a power controller may also be referred to as a power management IC (PMIC). The display device 100 may also include a voltage line for supplying a high level voltage VDD, a low level voltage VSS, and a reference voltage VRFE related to the driving of the pixel circuit, as shown in the example.

Meanwhile, the display device 100 may further include various additional elements for generating various signals or driving pixels in the display area. An additional element for driving the pixel may be an inverter circuit, a multiplexer, an electrostatic discharge circuit, or the like. The display device 100 may also include additional elements associated with functions other than pixel driving. For example, the display device 100 may include additional elements that provide a touch sensing function, a user authentication function (e.g., fingerprint recognition), a multi-level pressure sensing function, a tactile feedback function, and the like. The above-mentioned additional elements may be located in the non-display area and / or an external circuit connected to the connection interface.

2 is a cross-sectional view schematically showing a display region and a non-display region of a display device according to an embodiment of the present invention.

The display area A / A and the non-display area I / A can be applied to at least a part of the display area A / A and the non-display area I / A described in FIG. Hereinafter, the display device will be described by taking an organic light emitting display as an example.

In the case of the organic light emitting diode display, thin film transistors 102, 104 and 108, organic light emitting elements 112, 114 and 116 and various functional layers are formed on the base layer 101 in the display area A / . On the other hand, various driving circuits (for example, GIP), electrodes, wires, functional structures, and the like may be disposed on the base layer 101 in the non-display area.

The base layer 101 supports various components of the organic light emitting diode display 100. The base layer 101 may be formed of a transparent insulating material, for example, an insulating material such as glass, plastic, or the like. The substrate (array substrate) may also be referred to as a concept including an element and a functional layer formed on the base layer 101, for example, a switching TFT, a driving TFT, an organic light emitting element, a protective film and the like.

The buffer layer 130 may be located on the base layer 101. The buffer layer is a functional layer for protecting a thin film transistor (TFT) from impurities such as alkaline ions or the like flowing out from the base layer 101 or the lower layers. The buffer layer may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof. The buffer layer 130 may include a multi-buffer and / or an active buffer.

A thin film transistor is placed on the base layer 101 or the buffer layer. The thin film transistor has a structure in which a semiconductor layer (active layer), a gate insulator, a gate electrode, an interlayer dielectric layer (ILD), a source and a drain electrode are sequentially stacked Alternatively, the thin film transistor may have a structure in which the gate electrode 104, the gate insulating layer 105, the semiconductor layer 102, and the source and drain electrodes 108 are sequentially arranged as shown in FIG.

The semiconductor layer 102 may be made of polysilicon (p-Si), in which case a predetermined region may be doped with an impurity. Further, the semiconductor layer 102 may be made of amorphous silicon (a-Si), or may be made of various organic semiconductor materials such as pentacene. Further, the semiconductor layer 102 may be made of oxide.

The gate electrode 104 may be formed of various conductive materials such as Mg, Al, Ni, Cr, Mo, W, Au, Or the like.

The gate insulating layer 105 and the interlayer insulating layer ILD may be formed of an insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of an insulating organic material or the like. A contact hole through which the source and drain regions are exposed may be formed by selective removal of the gate insulating layer 105 and the interlayer insulating layer.

The source and drain electrodes 108 are formed in the form of a single layer or a multi-layered material for the electrodes on the gate insulating layer 105 or the interlayer insulating layer (ILD). A protective layer 109 composed of an inorganic insulating material may cover the source and drain electrodes 108 as needed.

The planarizing layer 107 may be located on the thin film transistor. The planarizing layer 107 protects the thin film transistor and flattenes the top surface thereof. The planarization layer 107 may be formed in various shapes and may be formed of an organic insulating film such as BCB (benzocyclobutene) or acrylic or an inorganic insulating film such as a silicon nitride film (SiNx) or a silicon oxide film (SiOx) It may be formed as a single layer, or it may be composed of a double layer or a multi layer.

The organic light emitting device may have a structure in which a first electrode 112, an organic light emitting layer 114, and a second electrode 116 are sequentially arranged. That is, the organic light emitting device includes a first electrode 112 formed on the planarization layer 107, an organic light emitting layer 114 disposed on the first electrode 112, and a second electrode (not shown) disposed on the organic light emitting layer 114 116).

The first electrode 112 is electrically connected to the drain electrode 108 of the driving thin film transistor through the contact hole. When the organic light emitting display 100 is a top emission type, the first electrode 112 may be made of an opaque conductive material having high reflectance. For example, the first electrode 112 may be formed of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr) . The first electrode 112 may be an anode of an organic light emitting diode.

The bank 110 is formed in the remaining region except for the light emitting region. Accordingly, the bank 110 has a bank hole for exposing the first electrode 112 corresponding to the light emitting region. The bank 110 may be made of an inorganic insulating material such as a silicon nitride film (SiNx), a silicon oxide film (SiOx), or an organic insulating material such as BCB, acrylic resin or imide resin.

The organic light emitting layer 114 is positioned on the first electrode 112 exposed by the bank 110. [ The organic light emitting layer 114 may include a light emitting layer, an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, and the like. The organic light emitting layer may have a single light emitting layer structure that emits a single light or may include a plurality of light emitting layers to emit white light.

And the second electrode 116 is located on the organic light emitting layer 114. When the OLED display 100 is a top emission type, the second electrode 116 may be a transparent conductive layer such as indium tin oxide (ITO) or indium zinc oxide (IZO) Thereby emitting the light generated in the organic light emitting layer 114 to the upper portion of the second electrode 116. The second electrode 116 may be a cathode of the organic light emitting diode.

The encapsulation layer 120 is located on the second electrode 116. The sealing layer 120 prevents oxygen and moisture penetration from the outside in order to prevent oxidation of the light emitting material and the electrode material. When the organic light emitting device is exposed to moisture or oxygen, a pixel shrinkage phenomenon in which the light emitting region is reduced or a dark spot in the light emitting region may occur. The encapsulation layer may be formed of an inorganic film made of glass, metal, aluminum oxide (AlOx) or silicon (Si) based material, or may be composed of an organic film 122 and inorganic films 121-1 and 121-2. May alternatively be stacked. At this time, the inorganic films 121-1 and 121-2 serve to block the penetration of moisture and oxygen, and the organic film 122 serves to flatten the surfaces of the inorganic films 121-1 and 121-2 do. When the encapsulation layer is formed of a plurality of thin film layers, the movement path of water or oxygen becomes long and complicated as compared with the case of a single layer, so that moisture / oxygen penetrates into the organic light emitting element becomes difficult.

The barrier film 140 may be positioned on the sealing layer 120 to seal the entirety of the base layer 101. The barrier film 140 may be a phase difference film or an optically isotropic film. When the barrier film has optically isotropic properties, the incident light incident on the barrier film is transmitted without phase delay. Further, an organic film or an inorganic film may be further disposed on the upper or lower surface of the barrier film to prevent penetration of moisture or oxygen from the outside.

The adhesive layer 145 may be positioned between the barrier film 140 and the encapsulating layer 120. The adhesive layer 145 bonds the sealing layer 120 and the barrier film 140. The adhesive layer 145 may be a thermosetting or natural curing adhesive. For example, the adhesive layer 145 may be made of a material such as B-PSA (Barrier pressure sensitive adhesive).

On the barrier film 140, a touch panel (film), a polarizing film, a top cover, and the like may be further positioned.

The pixel circuit is not disposed in the non-display area I / A, but the base layer 101 and the organic / inorganic functional layers 130, 105, 107 120, and the like may exist. In addition, the materials used in the constitution of the display area A / A may be arranged in the non-display area I / A for other purposes. For example, the metal 104 'used as the gate electrode of the display region TFT, or the metal 108' used as the source / drain electrode can be arranged in the non-display region I / A for the wiring and electrode have. Furthermore, the metal 112 'used as one electrode (for example, an anode) of the organic light emitting diode may be disposed in the non-display area I / A for the wiring and the electrode.

The base layer 101, the buffer layer 130, the gate insulating layer 105 and the planarization layer 107 of the non-display area I / A are the same as those described in the display area A / A. The dam 190 is a structure that controls the organic film 122 to spread too far into the non-display area I / A. Various circuits and electrodes / wires arranged in the non-display area I / A can be made of the gate metal 104 'and / or the source / drain metal 108'. At this time, the gate metal 104 'is formed in the same process with the same material as the gate electrode of the TFT, and the source / drain metal 108' is formed in the same process with the same material as the source / drain electrode of the TFT.

For example, the source / drain metal may be used as a power supply (e.g., base power supply (Vss)) wiring 108 '. At this time, the power supply line 108 'is connected to the metal layer 112' and the cathode 116 of the organic light emitting diode is connected to the source / drain metal 108 'and the metal layer 112' Can be supplied. The metal layer 112 'may be in contact with the power supply wiring 108' and extend along the sidewalls of the outermost planarization layer 107 to contact the cathode 116 above the planarization layer 107. The metal layer 112 'may be formed of the same material as the anode 112 of the organic light emitting diode and formed in the same process.

The organic light emitting display device may be damaged by cracks or the like in the inorganic layer of the outer region E due to an external impact. If the damage is large, it may be immediately revealed as a faulty drive or an abnormal screen. However, if minute damage occurs, even if the organic light emitting display device is initially driven normally, the damage spreads through the inorganic layer over time, resulting in poor moisture permeability and / or poor driving performance.

Although damage to the outer frame portion of the organic light emitting display device is an important factor affecting reliability and service life of the product, there is no method that can detect damage such as cracks in advance, so that it is difficult to control the quality of the organic light emitting display device . Accordingly, the present inventors have devised a method and structure capable of detecting damage to an outer portion of an organic light emitting display device in advance.

3A to 3C are diagrams showing a damage detection structure / method of an organic light emitting display according to an embodiment of the present invention.

3A, only the damage detection wiring 180 outside the display area A / A and the display area A / A of the organic light emitting display device is simply shown. The display area A / A includes a pixel and a pixel circuit associated with the pixel, and a non-display area surrounds the display area. The damage detection wiring 180 is disposed in the non-display area, and detects damage to the non-display area. More specifically, the damage detection wiring 180 is provided to detect damage (for example, cracks) occurring in at least one of the inorganic layers in the non-display area. Here, the inorganic layer in the non-display area I / A includes the buffer layer 130, the gate insulating layer 105, the interlayer insulating layer (ILD), the inorganic films 121-1 and 121- 2), and the like. The inorganic layers 121-1 and 121-2 included in the buffer layer 130, the gate insulating layer 105, the interlayer insulating layer (ILD), and the sealing layer are as described in FIG.

The damage detection wiring 180 may be disposed in a shape surrounding the display area, for example, FIG. 3A. However, the damage detection wiring 180 may be disposed only in a part of the non-display area (e.g., the lower end, the left end, or in the vicinity of the corner).

The damage detection wiring 180 is provided so that electrical characteristics (for example, resistance value) fluctuate due to damage to at least one of the inorganic layers. Particularly, since the damage detection wiring 180 is disposed between the inorganic layers, the electrical characteristic values may be changed according to damage (crack) diffused along the inorganic layer. For further enhanced damage detection / detection, the damage sensing wires 180 may be provided with conductors in which the first material of the first layer and the second material of the second layer are alternately (alternately) connected to each other with a constant length . For example, the first material 108 'may be the same material as the source electrode or the drain electrode of the thin film transistor (TFT) included in the pixel circuit, and the second material 116' And may be the same material as the cathode electrode of the organic light emitting diode. In this case, the first material 108 'is affected by the damage D1 of the inorganic layer (for example, the buffer layer, the gate insulating layer, the interlayer insulating layer) underlying the damage detecting wiring, The damaged portion 116 'is affected by the damage D2 of the inorganic layer (for example, the inorganic film forming the sealing layer) on the damage detection wiring 180. [ Therefore, damage caused in the inorganic layer on the upper or lower portion of the damage detecting wiring 180 may appear as a change in resistance of the wiring 180. The change in the electrical characteristic indicated on the damage detection wiring 180 can be determined by measuring with the external meter 200. [ The meter 200 is connected to both ends of the damage sensing wiring 180 and measures the electrical characteristics (resistance, etc.) of the damage sensing wiring 180 and then compares the electrical characteristics , Whether or not the inorganic layer is damaged) can be determined. Both ends of the damage detection wiring 180 connected to the meter 200 may be located in a pad area. That is, the damage detection wiring 180 may be exposed to the outside of the pad region and connected to the meter 200. In addition, the damage detection wiring 180 and the meter 200 may be connected to each other through an external substrate (COF, PCB, etc.) attached to the pad area.

The first material 108 'and the second material 116' constituting the damage detection wiring 180 may be disposed only in a specific region where damage to the inorganic layer is to be detected. That is, only one of the first material 108 'and the second material 116' may be disposed in a region other than the specific region. For example, the first material 108 'and the second material 116' are patterned only at the lower end of the organic light emitting display device, thereby intensively monitoring the damage at the lower end of the display device. In this case, a conductive line extending only to one of the first material 108 'and the second material 116' may be disposed in a region other than the lower end portion.

Meanwhile, the damage detection wiring 180 may include a plurality of leads separated from each other. 4b, 4c, and 4d, the damage detection wires 180 may be formed of two conductor bundles 180-1 and 180-2, 180-3 and 180- 4, 180-5 and 180-6). At this time, the conductors separated from each other may have different patterns in which the first material and the second material are arranged. These embodiments will be described in more detail with reference to Figs. 4B to 4D.

4B to 4D are diagrams showing a state in which the damage sensing wiring 180 including the first sensing wiring 180-1, 180-3, 180-5 and the second sensing wiring 180-2, 180-4, Fig. As described above, the first sensing wires 180-1, 180-3, and 180-5 and the second sensing wires 180-2, 180-4, and 180-6 are connected to the first material 108 ' And the pattern (rule) in which the second material 116 'is arranged may be different from each other. This is to detect damage to the inorganic layer at various points.

Referring to FIG. 4B, the first material 108 'and the second material 116' are alternately arranged in the up, down, left, and right directions. This is an embodiment in which the possibility of damage detection is maximized in consideration of the difference between the inorganic layer in which the damage is detected by the first material 108 'and the inorganic charge in which the damage is detected by the second material 116' .

Referring to FIG. 4C, the first sensing line 180-3 is disposed on the right side of the display device alternately with the first material 108 'and the second material 116'. On the other hand, Only material 116 'is disposed. On the other hand, the second sensing wiring 180-4 is arranged alternately with the first material 108 'and the second material 116' only on the left side of the display device, &Apos;) < / RTI > With this arrangement, it is possible to divide the damage occurrence area for each of the first sense wirings 180-3 or the second sense wirings 180-4.

Referring to FIG. 4d, the first sensing line 180-5 is arranged alternately with the first material 108 'and the second material 116' only on the upper side of the display device, Only material 116 'is disposed. On the other hand, the second sensing wire 180-6 is arranged alternately in the lower side of the display device with the first material 108 'and the second material 116' &Apos;) < / RTI > With this arrangement, it is possible to divide the damage occurrence area for each of the first sense wirings 180-5 or the second sense wirings 180-6.

The first material 108 'and the second material 116' in different layers may be connected to each other through a contact hole, as shown in FIG. 3B. Although the gate insulating layer 105 is shown as being under the first material 108 'in FIG. 3c, a buffer layer (multi-buffer, active buffer, etc.) or an interlayer insulating layer may be formed on the first material 108' It can also be placed below. 3c, a planarization layer 107 is shown between the first material 108 'and the second material 116', but according to an embodiment, the protective layer 109 is formed of a first material 108 ' May be between the second material 116 '.

The first material and the second material may be connected to each other through various methods other than the contact hole. By thus forming a single lead (i.e., damage detecting wiring) by connecting different materials (metals) placed on two different layers, it is possible to detect all damage to the inorganic layer above and below the damage detecting wiring 180 . Of course, it is also possible to form damage monitoring wiring with any one layer of metal. However, a conductor made of only one layer of metal has not only a difficulty in manufacturing but also a significant resistance change is not measured by the damage generated in the non-adjacent inorganic layer, and resistance to damage Even a change was found to be difficult to measure significantly. Accordingly, the present inventors adopted a structure in which materials arranged in two or more layers are connected to form one damage-detecting conductor.

The damage detection wiring 180 may be a metal layer positioned on the outermost side of the display device. That is, as shown in FIG. 3C in which the X portion of FIG. 3A is enlarged, the damage detecting wiring 180 is located further outward than the power wiring (for example, VSS wiring) for transmitting power to the pixel circuit Closer to the outermost border of the display area, and farther from the display area).

The damage detection wiring structure described above can prevent potential product defects by allowing easy detection of damage to the inorganic layer. This can also have a positive effect on product production efficiency.

While the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to these embodiments, and various modifications may be made without departing from the scope of the present invention. Therefore, the embodiments disclosed herein are for the purpose of describing rather than limiting the technical spirit of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, and may be technically variously interlocked and driven by one of ordinary skill in the art and that each embodiment may be implemented independently of one another, . The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

Claims (13)

A display area having a pixel and a pixel circuit associated with the pixel;
A non-display area surrounding the display area;
And a damage detection wiring disposed in the non-display area and adapted to detect damage to the non-display area. The method according to claim 1,
Wherein the damage detection wiring is configured to detect damage to at least one of the inorganic layers in the non-display area. 3. The method of claim 2,
Wherein the damage detection wiring is provided such that the resistance value changes due to damage to the at least one inorganic layer. The method of claim 3,
Wherein the damage detection wiring is disposed between the inorganic layers. The method according to claim 1,
Wherein the damage detection wiring includes:
Wherein the first material of the first layer and the second material of the second layer are alternately connected to each other. 6. The method of claim 5,
The first material is the same material as a source electrode or a drain electrode of a thin film transistor (TFT) included in the pixel circuit,
Wherein the second material is the same material as the cathode electrode of the organic light emitting diode included in the pixel. 6. The method of claim 5,
Wherein the first material and the second material are connected to each other through a contact hole. 6. The method of claim 5,
Wherein the first material is affected by damage of the inorganic layer under the damage detection wiring and the second material is affected by damage of the inorganic layer on the damage detection wiring. 6. The method of claim 5,
Wherein the first material and the second material are < RTI ID = 0.0 >
They are all located in a specific area where damage to the inorganic layer is to be detected,
Wherein only one of the two regions is disposed in a region other than the specific region. 6. The method of claim 5,
Wherein the damage detection wiring includes a first sense wiring and a second sense wiring separated from each other,
Wherein the first sensing wiring and the second sensing wiring have different patterns in which the first material and the second material are arranged. The method according to claim 1,
Wherein the damage detection wiring is disposed so as to surround the display region. 12. The method of claim 11,
Wherein the organic light emitting display is disposed further outward than a power supply line for transmitting power to the pixel circuit. The method according to claim 1,
Wherein the inorganic layer in the non-display region
A buffer layer, a gate insulating layer, an interlayer insulating layer, and an inorganic film contained in the sealing layer.

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