KR20190005242A - 유기 프리 라디컬들을 사용한 초박형 금속 나노와이어들의 합성 - Google Patents

유기 프리 라디컬들을 사용한 초박형 금속 나노와이어들의 합성 Download PDF

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Publication number
KR20190005242A
KR20190005242A KR1020187037921A KR20187037921A KR20190005242A KR 20190005242 A KR20190005242 A KR 20190005242A KR 1020187037921 A KR1020187037921 A KR 1020187037921A KR 20187037921 A KR20187037921 A KR 20187037921A KR 20190005242 A KR20190005242 A KR 20190005242A
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KR
South Korea
Prior art keywords
metal
nanowires
reducing agent
metal nanowires
benzoin
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KR1020187037921A
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English (en)
Korean (ko)
Inventor
페이동 양
판 쿠이
르티엔 도우
즈치앙 니우
Original Assignee
더 리전츠 오브 더 유니버시티 오브 캘리포니아
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Application filed by 더 리전츠 오브 더 유니버시티 오브 캘리포니아 filed Critical 더 리전츠 오브 더 유니버시티 오브 캘리포니아
Publication of KR20190005242A publication Critical patent/KR20190005242A/ko
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • B22F1/0044
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • B22F1/054Nanosized particles
    • B22F1/0547Nanofibres or nanotubes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/07Metallic powder characterised by particles having a nanoscale microstructure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/16Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01L31/035227
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/138Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437Quantum wires or nanorods
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/254Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising a metal, e.g. transparent gold
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00Metallic composition of the powder or its coating
    • B22F2301/10Copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00Metallic composition of the powder or its coating
    • B22F2301/25Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
    • B22F2301/255Silver or gold
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2304/00Physical aspects of the powder
    • B22F2304/05Submicron size particles
    • B22F2304/054Particle size between 1 and 100 nm

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Materials Engineering (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
KR1020187037921A 2016-06-02 2017-05-23 유기 프리 라디컬들을 사용한 초박형 금속 나노와이어들의 합성 Withdrawn KR20190005242A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662344893P 2016-06-02 2016-06-02
US62/344,893 2016-06-02
US201662419127P 2016-11-08 2016-11-08
US62/419,127 2016-11-08
PCT/US2017/034061 WO2017210026A1 (en) 2016-06-02 2017-05-23 Synthesis of ultra-thin metal nanowires using organic free radicals

Publications (1)

Publication Number Publication Date
KR20190005242A true KR20190005242A (ko) 2019-01-15

Family

ID=60477988

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187037921A Withdrawn KR20190005242A (ko) 2016-06-02 2017-05-23 유기 프리 라디컬들을 사용한 초박형 금속 나노와이어들의 합성

Country Status (7)

Country Link
US (1) US20200269323A1 (https=)
EP (1) EP3463723A4 (https=)
JP (1) JP2019520479A (https=)
KR (1) KR20190005242A (https=)
CN (1) CN109475943A (https=)
TW (1) TW201816133A (https=)
WO (1) WO2017210026A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102022850B1 (ko) 2018-06-05 2019-09-19 (주)자숨 식기 헹굼 세척장치
WO2024162514A1 (ko) * 2023-01-31 2024-08-08 동아대학교 산학협력단 고 종횡비의 구리 나노와이어의 제조방법 및 이에 따른 구리 나노와이어

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7164391B2 (ja) * 2018-10-22 2022-11-01 トヨタ自動車株式会社 銅ナノワイヤの製造方法
CN110227815B (zh) * 2019-06-11 2021-04-27 东南大学 一种水分散性金纳米线的制备方法
CN110355359A (zh) * 2019-08-09 2019-10-22 陕西煤业化工技术研究院有限责任公司 一种超细银纳米线及其制备方法
JP7438348B2 (ja) 2019-11-15 2024-02-26 カウンシル オブ サイエンティフィック アンド インダストリアル リサーチ 気泡塔型反応器を使用した、金属ナノワイヤの合成のための連続流動法
CN111618315A (zh) * 2020-06-04 2020-09-04 厦门大学 一种铜纳米线的制备方法

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US6686017B2 (en) * 2001-02-28 2004-02-03 Matsushita Electric Industrial Co., Ltd. Optical recording film, method for manufacturing the same, optical recording medium, method for manufacturing the same, optical recording method, information recording/reproducing apparatus, information reproducing/recording method, computer system and video signal recording/reproducing system
TW200303439A (en) * 2002-02-04 2003-09-01 Mitsui Chemicals Inc Method for producing liquid crystal display cell and sealing agent for liquid crystal display cell
JP2007070723A (ja) * 2005-08-10 2007-03-22 Osaka Univ 媒体中に金属ナノ粒子を形成する方法
JP4400751B2 (ja) * 2006-10-24 2010-01-20 信越化学工業株式会社 光及び熱硬化性コーティング剤組成物及びその硬化皮膜を有する物品
KR101345440B1 (ko) * 2007-03-15 2013-12-27 삼성전자주식회사 메조세공 템플릿을 이용한 나노 구조체의 대량 제조방법 및그에 의해 제조된 나노 구조체
US7922787B2 (en) * 2008-02-02 2011-04-12 Seashell Technology, Llc Methods for the production of silver nanowires
JP5306760B2 (ja) * 2008-09-30 2013-10-02 富士フイルム株式会社 透明導電体、タッチパネル、及び太陽電池パネル
US9359505B2 (en) * 2010-07-27 2016-06-07 Konica Minolta Holdings, Inc. Gas barrier film, process for production of gas barrier film, and electronic device
US10020807B2 (en) * 2013-02-26 2018-07-10 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
US9472788B2 (en) * 2014-08-27 2016-10-18 3M Innovative Properties Company Thermally-assisted self-assembly method of nanoparticles and nanowires within engineered periodic structures
TWI583799B (zh) * 2014-09-26 2017-05-21 美國加利福尼亞大學董事會 製造用於透明導體之超薄金屬奈米線的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102022850B1 (ko) 2018-06-05 2019-09-19 (주)자숨 식기 헹굼 세척장치
WO2024162514A1 (ko) * 2023-01-31 2024-08-08 동아대학교 산학협력단 고 종횡비의 구리 나노와이어의 제조방법 및 이에 따른 구리 나노와이어

Also Published As

Publication number Publication date
WO2017210026A1 (en) 2017-12-07
US20200269323A1 (en) 2020-08-27
TW201816133A (zh) 2018-05-01
CN109475943A (zh) 2019-03-15
EP3463723A1 (en) 2019-04-10
EP3463723A4 (en) 2020-01-15
JP2019520479A (ja) 2019-07-18

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