KR20180035534A - Resin composition for the transparent artificial marble chips and preparing method thereof - Google Patents
Resin composition for the transparent artificial marble chips and preparing method thereof Download PDFInfo
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- KR20180035534A KR20180035534A KR1020160125748A KR20160125748A KR20180035534A KR 20180035534 A KR20180035534 A KR 20180035534A KR 1020160125748 A KR1020160125748 A KR 1020160125748A KR 20160125748 A KR20160125748 A KR 20160125748A KR 20180035534 A KR20180035534 A KR 20180035534A
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- resin
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- 239000002928 artificial marble Substances 0.000 title claims abstract description 49
- 239000011342 resin composition Substances 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 9
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 title abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 77
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical class C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000004925 Acrylic resin Substances 0.000 claims abstract description 27
- 239000000178 monomer Substances 0.000 claims abstract description 18
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims description 62
- 239000011347 resin Substances 0.000 claims description 62
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 claims description 17
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 claims description 17
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 claims description 16
- 239000003822 epoxy resin Substances 0.000 claims description 16
- 229920000647 polyepoxide Polymers 0.000 claims description 16
- -1 (2,4,6-trimethylbenzoyl) acrylate Chemical compound 0.000 claims description 11
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 9
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- SAPGBCWOQLHKKZ-UHFFFAOYSA-N 6-(2-methylprop-2-enoyloxy)hexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCOC(=O)C(C)=C SAPGBCWOQLHKKZ-UHFFFAOYSA-N 0.000 claims description 7
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 claims description 6
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 claims description 6
- 239000012948 isocyanate Substances 0.000 claims description 4
- 238000003848 UV Light-Curing Methods 0.000 claims description 3
- 150000002513 isocyanates Chemical class 0.000 claims description 3
- MDDUHVRJJAFRAU-YZNNVMRBSA-N tert-butyl-[(1r,3s,5z)-3-[tert-butyl(dimethyl)silyl]oxy-5-(2-diphenylphosphorylethylidene)-4-methylidenecyclohexyl]oxy-dimethylsilane Chemical compound C1[C@@H](O[Si](C)(C)C(C)(C)C)C[C@H](O[Si](C)(C)C(C)(C)C)C(=C)\C1=C/CP(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 MDDUHVRJJAFRAU-YZNNVMRBSA-N 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 230000005484 gravity Effects 0.000 abstract description 5
- 239000003999 initiator Substances 0.000 abstract 1
- 239000011256 inorganic filler Substances 0.000 abstract 1
- 229910003475 inorganic filler Inorganic materials 0.000 abstract 1
- 150000002978 peroxides Chemical class 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 101
- 238000006243 chemical reaction Methods 0.000 description 43
- 229910052742 iron Inorganic materials 0.000 description 38
- 239000011230 binding agent Substances 0.000 description 30
- 238000003756 stirring Methods 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000003112 inhibitor Substances 0.000 description 9
- 238000006116 polymerization reaction Methods 0.000 description 9
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 8
- 239000007809 chemical reaction catalyst Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- YLHXLHGIAMFFBU-UHFFFAOYSA-N methyl phenylglyoxalate Chemical compound COC(=O)C(=O)C1=CC=CC=C1 YLHXLHGIAMFFBU-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 238000007259 addition reaction Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004579 marble Substances 0.000 description 2
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- QASBHTCRFDZQAM-UHFFFAOYSA-N (2-isocyanato-2-methyl-3-prop-2-enoyloxypropyl) prop-2-enoate Chemical compound C=CC(=O)OCC(C)(COC(=O)C=C)N=C=O QASBHTCRFDZQAM-UHFFFAOYSA-N 0.000 description 1
- DPNXHTDWGGVXID-UHFFFAOYSA-N 2-isocyanatoethyl prop-2-enoate Chemical compound C=CC(=O)OCCN=C=O DPNXHTDWGGVXID-UHFFFAOYSA-N 0.000 description 1
- JEHFRMABGJJCPF-UHFFFAOYSA-N 2-methylprop-2-enoyl isocyanate Chemical compound CC(=C)C(=O)N=C=O JEHFRMABGJJCPF-UHFFFAOYSA-N 0.000 description 1
- YSWBFLWKAIRHEI-UHFFFAOYSA-N 4,5-dimethyl-1h-imidazole Chemical compound CC=1N=CNC=1C YSWBFLWKAIRHEI-UHFFFAOYSA-N 0.000 description 1
- RIAHASMJDOMQER-UHFFFAOYSA-N 5-ethyl-2-methyl-1h-imidazole Chemical compound CCC1=CN=C(C)N1 RIAHASMJDOMQER-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- XHIKSLHIZYVEQI-UHFFFAOYSA-N CC1=C(C(=O)[PH2]=O)C(=CC(=C1)C)C Chemical compound CC1=C(C(=O)[PH2]=O)C(=CC(=C1)C)C XHIKSLHIZYVEQI-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 1
- YOGFUEYUFUYXLT-UHFFFAOYSA-N acetyl acetate;chromium Chemical compound [Cr].CC(=O)OC(C)=O YOGFUEYUFUYXLT-UHFFFAOYSA-N 0.000 description 1
- SSRHZSLSLDOUJB-UHFFFAOYSA-N benzene-1,4-diol;toluene Chemical compound CC1=CC=CC=C1.OC1=CC=C(O)C=C1 SSRHZSLSLDOUJB-UHFFFAOYSA-N 0.000 description 1
- QLRKASHXFNIPLZ-UHFFFAOYSA-M benzyl-dimethyl-phenylazanium;chloride Chemical compound [Cl-].C=1C=CC=CC=1[N+](C)(C)CC1=CC=CC=C1 QLRKASHXFNIPLZ-UHFFFAOYSA-M 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- IXLQOOXAQLYREP-UHFFFAOYSA-K chromium(3+) 3-oxobutanoate Chemical compound [Cr+3].CC(=O)CC([O-])=O.CC(=O)CC([O-])=O.CC(=O)CC([O-])=O IXLQOOXAQLYREP-UHFFFAOYSA-K 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- UMSGVWVBUHUHEH-UHFFFAOYSA-M ethyl(trimethyl)azanium;bromide Chemical compound [Br-].CC[N+](C)(C)C UMSGVWVBUHUHEH-UHFFFAOYSA-M 0.000 description 1
- YOMFVLRTMZWACQ-UHFFFAOYSA-N ethyltrimethylammonium Chemical compound CC[N+](C)(C)C YOMFVLRTMZWACQ-UHFFFAOYSA-N 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- WARQUFORVQESFF-UHFFFAOYSA-N isocyanatoethene Chemical compound C=CN=C=O WARQUFORVQESFF-UHFFFAOYSA-N 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- DFJOAAWVRHOYMW-UHFFFAOYSA-N n-(2-phenylpropan-2-yl)aniline Chemical compound C=1C=CC=CC=1C(C)(C)NC1=CC=CC=C1 DFJOAAWVRHOYMW-UHFFFAOYSA-N 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/062—Copolymers with monomers not covered by C08L33/06
- C08L33/068—Copolymers with monomers not covered by C08L33/06 containing glycidyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F265/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
- C08F265/04—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00 on to polymers of esters
- C08F265/06—Polymerisation of acrylate or methacrylate esters on to polymers thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
- C08L33/16—Homopolymers or copolymers of esters containing halogen atoms
Abstract
Description
본 발명은 UV경화형 인조대리석 투명칩용 수지 조성물 및 그 제조방법에 관한 것으로, 특히 작업성, 기계적 물성을 향상시킨 고비중의 UV경화형 인조대리석 투명칩용 수지 조성물 및 그 제조방법에 관한 것이다. The present invention relates to a UV curable resin composition for artificial marble transparent chips and a process for producing the same. More particularly, the present invention relates to a UV curable resin composition for artificial marble transparent chips, which has improved workability and mechanical properties.
인조대리석 칩은 아크릴계, 불포화폴리에스테르계, 에폭시계 수지 등과 배합하고 투명한 그대로 혹은 여러 가지의 첨가제나 안료 등을 첨가하여 천연대리석의 질감을 구현하도록 하여 아크릴계 인조대리석 혹은 폴리에스테르계 인조대리석에 무늬를 내는데 사용된다.Artificial marble chips are blended with acrylic, unsaturated polyester, epoxy resin, etc., and they are transparent, or various additives and pigments are added to realize the texture of natural marble, so that acrylic artificial marble or polyester artificial marble It is used to pay.
기존의 인조대리석 투명칩은 모재(Matrix)와 비교시 브리틀(Brittle)하여 인조대리석을 제조시 또는 제조 후 운반 및 후 가공시 크랙(Crack) 및 깨지는 현상이 발생하여 인조대리석 본래의 질감이 손상되어 상품성이 현저히 떨어졌었다. The existing artificial marble transparent chips are cracked as compared with the matrix and cracked and cracked when the artificial marble is manufactured or manufactured and transported and post processed, and the original texture of the artificial marble is damaged And the merchantability was significantly lowered.
인조대리석 투명칩용 수지의 작업성과 기계적 물성이 중요한 이유는 칩용수지의 제조시간을 단축시켜 생산성을 향상시키고 상품성을 높이기 때문이다. The reason for the workability and mechanical properties of the artificial marble transparent chip resin is that it shortens the manufacturing time of the chip resin and improves the productivity and increases the merchantability.
인조대리석 투명칩에 아크릴계나 불포화 폴리에스테르 수지를 단독으로 사용할 경우 비중이 현저히 낮고 비중을 높이기 위해 할로겐화 수지를 사용하나 할로겐화 수지 단독으로 사용할 경우는 너무 브리틀하여 깨짐 현상이 발생하여 충격에 매우 취약하게 된다.When acrylic or unsaturated polyester resin is used alone in artificial marble transparent chips, the specific gravity is remarkably low and halogenated resin is used to increase the specific gravity. However, when the halogenated resin is used alone, it is too brittle, do.
따라서, 본 발명의 목적은 상기한 바와 같은 문제점을 해결하기 위한 것으로 고비중을 그대로 유지하면서 부드러운 질감의 인조대리석 투명칩 제조를 위한 수지 조성물 및 그 제조방법을 제공하는 것이다. Accordingly, it is an object of the present invention to provide a resin composition for producing artificial marble transparent chips having a smooth texture while maintaining high voids and a method for producing the same, in order to solve the above problems.
본 발명에서는 상기 목적을 위해 할로겐화 에폭시 아크릴레이트 수지에 반응성 모노머와 특정 광개시제를 포함하는 인조대리석 투명칩 제조를 위한 수지 조성물을 제공한다. The present invention provides a resin composition for producing artificial marble transparent chips containing a reactive monomer and a specific photoinitiator in a halogenated epoxy acrylate resin for the above purpose.
본 발명은 할로겐화 에폭시 아크릴레이트 수지에 메틸메타아크릴레이트,트리메틸올프로판트리메타아크릴레이트, 및 1,6-헥산디올디메타아크릴레이트로 이루어지는 그룹에서 선택된 반응성모노머와 디페닐(2,4,6-트리메틸벤조일)-포스핀옥사이드, 1-히드록시-시클로헥실페닐케톤 및 페닐비스(2,4,6-트리메틸벤조일)-포스핀옥사이드모노 이소시아네이트로 이루어지는 그룹에서 선택된 광개시제를 포함하는 인조대리석 투명칩 제조를 위한 수지 조성물을 제공한다. The present invention relates to a process for producing a halogenated epoxy acrylate resin, which comprises reacting a halogenated epoxy acrylate resin with a reactive monomer selected from the group consisting of methyl methacrylate, trimethylolpropane trimethacrylate, and 1,6-hexanediol dimethacrylate, Artificial marble transparent chip manufacture comprising a photoinitiator selected from the group consisting of trimethylbenzoyl) -phosphine oxide, 1-hydroxy-cyclohexylphenylketone and phenylbis (2,4,6-trimethylbenzoyl) -phosphine oxide monoisocyanate The present invention provides a resin composition comprising
본 발명의 인조대리석 투명칩 제조방법은 할로겐화 에폭시 아크릴레이트 수지에 메틸메타아크릴레이트,트리메틸올프로판트리메타아크릴레이트, 및 1,6-헥산디올디메타아크릴레이트로 이루어지는 그룹에서 선택된 반응성 모노머와 디페닐(2,4,6-트리메틸벤조일)-포스핀옥사이드, 1-히드록시-시클로헥실페닐케톤 및 페닐비스(2,4,6-트리메틸벤조일)-포스핀옥사이드모노 이소시아네이트로 이루어지는 그룹에서 선택된 광개시제를 부가하고 UV 경화시키는 것을 특징으로 한다. The method for producing a transparent marble of artificial marble of the present invention is characterized in that a halogenated epoxy acrylate resin is mixed with a reactive monomer selected from the group consisting of methyl methacrylate, trimethylolpropane trimethacrylate, and 1,6-hexanediol dimethacrylate, (2,4,6-trimethylbenzoyl) -phosphine oxide, 1-hydroxy-cyclohexyl phenyl ketone and phenyl bis (2,4,6-trimethylbenzoyl) -phosphine oxide monoisocyanate. Is added and UV cured.
본 발명의 UV경화형 인조대리석 투명칩용 수지 조성물은 바람직하게는 할로겐화 에폭시 아크릴레이트 수지 70-90 중량부에, 반응성 모노머 10-30중량부, 광개시제 0.01 내지 2중량부로 이루어진다. The resin composition for a UV curable artificial marble transparent chip of the present invention preferably comprises 70 to 90 parts by weight of a halogenated epoxy acrylate resin, 10 to 30 parts by weight of a reactive monomer, and 0.01 to 2 parts by weight of a photoinitiator.
상기 조성물에 사용되는 할로겐화 에폭시 아크릴레이트 수지는 할로겐화 에폭시 아크릴레이트 수지 골격의 미반응 하이드록시 그룹에 대해 반응성 모노머인 이소시아네이트를 부가반응시켜 제조하거나 또는 우레탄 아크릴레이트 1-5중량부 부가할 수 있다. The halogenated epoxy acrylate resin used in the composition may be prepared by addition reaction of isocyanate, which is a reactive monomer, to the unreacted hydroxy group of the halogenated epoxy acrylate resin skeleton, or 1 to 5 parts by weight of urethane acrylate.
본 발명의 UV경화형 인조대리석 투명칩용 수지 조성물에 의해 작업성 및 기계적 물성이 크게 향상되었으며 비중 1.5~1.7의 고비중의 UV경화형 인조대리석용 투명칩을 제공할 수 있다. The UV curing type artificial marble transparent chip of the present invention can provide a transparent chip for UV curing artificial marble having a high specific gravity of 1.5 to 1.7 and a high workability and mechanical properties.
상기 본 발명의 조성물을 제조하는 방법은 다음과 같다. The method of preparing the composition of the present invention is as follows.
첫째 할로겐화 에폭시 아크릴레이트 수지 제조 단계, 둘째 할로겐화 에폭시 아크릴레이트 수지 골격의 미반응 하이드록시 그룹에 대한 반응성 모노머의 반응단계, 셋째 반응성 모노머 및 기타 첨가제의 추가단계로 이루어진다. A step of preparing a first halogenated epoxy acrylate resin, a step of reacting a reactive monomer with an unreacted hydroxy group of a halogenated epoxy acrylate resin skeleton, and a step of adding a third reactive monomer and other additives.
첫 번째 단계인 할로겐화 에폭시 아크릴레이트 수지 제조단계에서는 에폭시 당량이 300-1,000인 할로겐화 에폭시 수지를 교반기, 온도계, 냉각 콘덴서 및 적하 장치 등이 설치된 반응조에 넣는다. 그 다음 질소 또는 공기를 공급하면서 가열하고 용융시켜 유동이 확인되면 반응조 내용물의 온도를 100-125℃로 올린다.In the first step, the halogenated epoxy acrylate resin preparation step, a halogenated epoxy resin having an epoxy equivalent of 300-1,000 is placed in a reaction tank equipped with a stirrer, a thermometer, a cooling condenser and a dropping device. Then, when the flow is confirmed by heating and melting while supplying nitrogen or air, the temperature of the reactor contents is raised to 100-125 ° C.
상기 할로겐화 에폭시 수지가 완전히 용융되어 반응조 교반이 원활한 것을 확인한 후, 반응촉매를 용융된 할로겐화 에폭시 수지에 투입하는데 반응촉매는 아크릴산 또는 메타아크릴산 투입량에 대하여 0.1-3.0 중량%를 투입한 후 반응색상 개선제 및 산화 방지제를 투입할 수 있다. 반응색상 개선제 및 산화 방지제를 각각 0.005-0.02중량%를 넣는 것이 바람직하다. After the halogenated epoxy resin is completely melted and the reaction tank is confirmed to be smooth, the reaction catalyst is added to the molten halogenated epoxy resin. The reaction catalyst is added in an amount of 0.1-3.0 wt% based on the amount of acrylic acid or methacrylic acid, An antioxidant can be added. It is preferable to add 0.005 to 0.02% by weight of the reaction color improving agent and the antioxidant, respectively.
반응촉매로는 트리에틸아민, 에틸트리메틸 암모늄브로마이드, 디메틸벤질아민, 디노르말부틸아민, 디메틸페닐벤질 아민, 테트라메틸암모늄클로라이드, 크롬아세틸아세테이트, 트리페닐스티핀, 디메틸페닐벤질암모늄클로라이드, 트리페닐 포스핀, 에틸메틸이미다졸 및 디메틸이미다졸을 사용한다. 반응색상 개선제로는 아인산 또는 인화합물을 사용하는 것이 바람직하다. Examples of the reaction catalyst include triethylamine, ethyltrimethylammonium bromide, dimethylbenzylamine, dinormalbutylamine, dimethylphenylbenzylamine, tetramethylammonium chloride, chromium acetylacetate, triphenylstinine, dimethylphenylbenzylammonium chloride, triphenylphosphine Pin, ethylmethylimidazole and dimethylimidazole are used. As the reaction color improving agent, it is preferable to use phosphorous acid or phosphorus compounds.
상기 반응기에 할로겐화 에폭시 수지 및 기타 첨가제가 모두 투입되고 온도가 올라간 것이 확인된 후 적하 장치에 할로겐화 에폭시 수지/아크릴산(또는메타아크릴산)의 당량비 1-1.2가 되도록 아크릴산 또는 메타아크릴산과 중합방지제를 잘 혼합하여 드로핑을 한다. 이때 중합방지제가 아크릴산에 완전히 녹았는지 확인한다. 중합방지제는 할로겐화 에폭시 수지 전체 투입량에 대하여 0.001-0.04 중량%가 바람직하고 중합방지제로는 하이드로퀴논, 톨루하이드로퀴논, 하이드로퀴논모노메틸에테르, 파라벤조퀴논, 디메틸파라벤조퀴논 및 파라터셔리부틸카테콜로 이루어진 군으로부터 하나 또는 둘 이상을 선택하여 사용한다.After all of the halogenated epoxy resin and other additives were put into the reactor and it was confirmed that the temperature had risen, acrylic acid or methacrylic acid and the polymerization inhibitor were well mixed with the dropping apparatus so that the equivalent ratio of the halogenated epoxy resin / acrylic acid (or methacrylic acid) And dropping. At this time, make sure that the polymerization inhibitor is completely dissolved in acrylic acid. The polymerization inhibitor is preferably 0.001-0.04% by weight based on the total amount of the halogenated epoxy resin, and examples of the polymerization inhibitor include hydroquinone, toluoquinone, hydroquinone monomethyl ether, parabenquoquinone, dimethylparabenquoquinone, Select one or more from the group.
반응촉매는 반드시 용융된 수지에 미리 투입하여 혼합하고 중합방지제를 적하 용기에 아크릴산과 함께 용해하여 한 방울씩 떨어뜨리면서 반응한다. 이때, 반응은 1-3 시간에 걸쳐서 이루어지면서 반응조의 온도는 100-120℃에서 이루어지도록 해야 한다.The reaction catalyst must be added to the molten resin in advance and mixed, and the polymerization inhibitor is dissolved in the dropping vessel together with acrylic acid and reacted dropwise. At this time, the reaction should be carried out over 1-3 hours and the temperature of the reaction vessel should be 100-120 ° C.
적하 완료 후 반응조 온도를 상승시켜 반응물의 온도를 105-125 ℃로 상승시킨 후 등온을 유지하며 반응시켜서 산가 5-15 에서 수평균 분자량 1000-5000 정도의 할로겐화 에폭시아크릴레이트 수지를 제조한다.After completion of the dropwise addition, the reactor temperature is raised to raise the temperature of the reaction product to 105-125 ° C., and the reaction is carried out while maintaining the isothermal temperature to prepare a halogenated epoxy acrylate resin having an acid value of 5-15 and a number average molecular weight of 1,000-5,000.
두 번째 단계 할로겐화 에폭시 아크릴레이트 수지 골격에 미반응 하이드록시 그룹에 대한 반응성 모노머의 반응단계에서는 첫번째 단계에서 제조한 할로겐화 에폭시 아크릴레이트 수지 65-89중량부에 모노 이소시아네이트를 1-5중량부 투입한다. 투입시 반응기 온도는 30-50℃를 유지하고 투입후 온도는 60-100℃까지 승온 후 1-3시간 유지 반응한다. 유지 반응 후 이소시아네이트 함량이 0.1% 이하가 되면 반응을 종료한다. 모노 이소시아네이트의 구체적인 예로는, 2-이소시아네이토에틸 (메타)아크릴레이트, 1,1-비스(아크릴로일옥시메틸)에틸 이소시아네이트, (메타)아크릴로일옥시 에틸 이소시아네이트, 메타-이소프로페닐-α,α-디메틸벤질이소시아네이트, 메타크릴로일 이소시아네이트; 비닐 이소시아네이트; 알릴 이소시아네이트 중 1개 혹은 1개 이상을 사용할 수 있다.In the step of reacting the reactive monomer to the unreacted hydroxy group in the second stage halogenated epoxy acrylate resin skeleton, 1 to 5 parts by weight of monoisocyanate is added to 65 to 89 parts by weight of the halogenated epoxy acrylate resin prepared in the first step. The reactor temperature is maintained at 30-50 ° C. After the addition, the temperature is raised to 60-100 ° C, and the reaction is maintained for 1-3 hours. The reaction is terminated when the isocyanate content after the maintenance reaction becomes 0.1% or less. Specific examples of the monoisocyanate include 2-isocyanatoethyl (meth) acrylate, 1,1-bis (acryloyloxymethyl) ethyl isocyanate, (meth) acryloyloxyethyl isocyanate, -α, α-dimethylbenzyl isocyanate, methacryloyl isocyanate; Vinyl isocyanate; One or more of allyl isocyanates can be used.
세 번째 반응성 모노머 및 기타 첨가제의 추가단계는 상기 두 번째 단계에서 제조된 할로겐화 에폭시 아크릴레이트 수지 70-90 중량부에 반응성 모노머 10-30 중량부를 첨가한다. 우레탄 아크릴레이트 1-5 중량부를 더 첨가할 수 있다. As a further step of the third reactive monomer and the other additives, 10 to 30 parts by weight of the reactive monomer is added to 70 to 90 parts by weight of the halogenated epoxy acrylate resin prepared in the second step. 1 to 5 parts by weight of urethane acrylate may further be added.
상기에서 얻어진 할로겐화 에폭시 아크릴레이트 수지 바인더를 105-100℃로 냉각시켜 질소 또는 공기 공급을 중단하면서 90-100 ℃에서 반응성 모노머를 10-30 중량부를 넣어 희석 후 60℃ 이하로 급냉각 반응시키고, 이 단계에서 경화성 조절을 위하여 금속 비누염 0.00005-0.0002 중량부가 사용될 수도 있다.The halogenated epoxyacrylate resin binder obtained above is cooled to 105-100 ° C and 10-30 parts by weight of a reactive monomer is added at 90-100 ° C while stopping the supply of nitrogen or air, 0.00005-0.0002 parts by weight of metal soap salt may be used for controlling the hardenability.
실시예 1 Example 1
할로겐화 에폭시 수지(국도화학 YDB-410P)70.0 중량부를 교반기, 온도계, 냉각 콘덴서 및 적하 장치 등이 설치된 반응조에 넣는다. 그 다음 질소 또는 공기를 공급하면서 가열하고 용융시켜 유동이 확인되면 반응조 내용물의 온도를 100-125℃로 올린 다음 중합방지제 파라벤조퀴논 0.005중량부 하이드로퀴논 0.005중량부 및 반응촉매 트리에틸아민 0.1중량부를 투입한 후, 메타아크릴산 13.89 중량부를 적하 장치에 넣고 용액을 떨어뜨리면서 반응시켰다. 산가 30 이하에서 톨루엔디이소시아네이트 1.0 중량부를 추가 반응시킨 후, 메틸메타아크릴레이트 13.0 중량부와 1,6-헥산디올디메타아크릴레이트 2.0중량부 희석하여 수 평균 분자량 5,000의 할로겐화 에폭시 아크릴레이트수지 바인더를 제조하였다. And 70.0 parts by weight of a halogenated epoxy resin (KODO CHEMICAL YDB-410P) are placed in a reaction tank equipped with a stirrer, a thermometer, a cooling condenser and a dropping device. Then, the temperature of the contents of the reaction vessel is raised to 100-125 ° C when the flow is confirmed by supplying nitrogen or air while heating, and then 0.005 part by weight of the polymerization inhibitor parabenzoquinone 0.005 part by weight of hydroquinone and 0.1 parts by weight of triethylamine of the reaction catalyst After the addition, 13.89 parts by weight of methacrylic acid was added to the dropping funnel and reacted while dropping the solution. After addition reaction of 1.0 part by weight of toluene diisocyanate at an acid value of 30 or less, 13.0 parts by weight of methyl methacrylate and 2.0 parts by weight of 1,6-hexanediol dimethacrylate were diluted to obtain a halogenated epoxy acrylate resin binder having a number average molecular weight of 5,000 .
실시예 2 Example 2
할로겐화 에폭시 수지(국도화학 YDB-406) 35.0중량부와 할로겐화 에폭시 수지(우진고분자 CXB-700S) 35.0중량부를 교반기, 온도계, 냉각 콘덴서 및 적하 장치 등이 설치된 반응조에 넣는다. 그 다음 질소 또는 공기를 공급하면서 가열하고 용융시켜 유동이 확인되면 반응조 내용물의 온도를 100-125℃로 올린 다음 중합방지제 하이드로퀴논모노메틸에테르 0.01중량부 및 반응촉매 디노르말부틸아민 0.15중량부를 투입한 후, 아크릴산 13.84중량부를 적하 장치에 넣고 용액을 떨어뜨리면서 반응시켰다. 산가 25 이하에서 헥사메틸렌디이소시아네트 1.0중량부를 추가 반응시킨 후, 메틸메타아크릴레이트 14.0중량부와 트리메틸올프로판트리메타아크릴레이트 1.0중량부를 희석하여 수 평균 분자량 6,500의 할로겐화 에폭시 아크릴레이트수지 바인더를 제조하였다. 35.0 parts by weight of a halogenated epoxy resin (KODO CHEMICAL YDB-406) and 35.0 parts by weight of a halogenated epoxy resin (Woojin Polymer CXB-700S) are placed in a reaction vessel equipped with a stirrer, a thermometer, a cooling condenser and a dropping device. Next, when the flow is confirmed by heating and melting while supplying nitrogen or air, the temperature of the contents of the reactor is raised to 100-125 ° C., 0.01 part by weight of a polymerization inhibitor hydroquinone monomethyl ether and 0.15 part by weight of reaction catalyst dinormal butylamine are added Then, 13.84 parts by weight of acrylic acid was added to the dropping funnel and reacted while dropping the solution. After addition reaction of 1.0 part by weight of hexamethylene diisocyanate at an acid value of 25 or less, 14.0 parts by weight of methyl methacrylate and 1.0 part by weight of trimethylolpropane trimethacrylate were diluted to prepare a halogenated epoxyacrylate resin binder having a number average molecular weight of 6,500 Respectively.
실시예 3 Example 3
할로겐화 에폭시 수지(우진고분자 CXB-600S) 68.0중량부를 교반기, 온도계, 냉각 콘덴서 및 적하 장치 등이 설치된 반응조에 넣는다. 그 다음 질소 또는 공기를 공급하면서 가열하고 용융시켜 유동이 확인되면 반응조 내용물의 온도를 100-125℃로 올린 다음 중합방지제 디메틸파라벤조퀴논 0.005중량부와 톨루하이드로퀴논 0.005중량부 및 반응촉매 에틸트리메틸 암모늄브로마이드 0.1중량부를 투입한 후, 아크릴산 9.0 중량부와 메타아크릴산 9.0중량부를 적하 장치에 넣고 용액을 떨어뜨리면서 반응시켰다. 산가 35 이하에서 이소포론디이소시아네트 3.89중량부를 추가 반응시킨 후 반응성 모노머 메틸메타아크릴레이트 14.0중량부와 1,6-헥산디올디메타아크릴레이트 1.0중량부를 희석하여 수 평균 분자량 5,500의 할로겐화 에폭시 아크릴레이트수지 바인더를 제조하였다. And 68.0 parts by weight of a halogenated epoxy resin (Woojin Polymer CXB-600S) are placed in a reaction tank equipped with a stirrer, a thermometer, a cooling condenser and a dropping device. Next, the temperature of the contents of the reactor was raised to 100-125 ° C. when the flow was confirmed by heating and melting while supplying nitrogen or air, and then 0.005 part by weight of dimethylparabenquoquinone, 0.005 part by weight of toluene hydroquinone and 0.005 part by weight of the polymerization catalyst ethyl trimethylammonium 0.1 part by weight of bromide was added, and then 9.0 parts by weight of acrylic acid and 9.0 parts by weight of methacrylic acid were added to the dropping funnel and reacted while dropping the solution. After reacting 3.89 parts by weight of isophorone diisocyanate at an acid value of 35 or less, 14.0 parts by weight of a reactive monomer methylmethacrylate and 1.0 part by weight of 1,6-hexanediol dimethacrylate were diluted to obtain a halogenated epoxy acrylate having a number average molecular weight of 5,500 To prepare a resin binder.
실시예 4 Example 4
할로겐화 에폭시 수지(다우케미칼 DER 560) 69.0 중량부를 교반기, 온도계, 냉각 콘덴서 및 적하 장치 등이 설치된 반응조에 넣는다. 그 다음 질소 또는 공기를 공급하면서 가열하고 용융시켜 유동이 확인되면 반응조 내용물의 온도를 100-125℃로 올린 다음 중합방지제 para-t-부틸카테콜 0.005중량부 와 하이드로퀴논 0.005 중량부, 반응촉매 크롬아세틸아세테이트 0.12중량부를 투입한 후, 메타아크릴산 14.0중량부를 적하 장치에 넣고 용액을 떨어뜨리면서 반응시켰다. 산가 15 이하에서 우레탄 아크릴레이트수지 1.87중량부를 추가 후, 메틸메타아크릴레이트 13.0중량부와 트리메틸올프로판트리메타아크릴레이트 2.0중량부를 희석하여 수평균 분자량 7,500의 할로겐화 에폭시 아크릴레이트수지 바인더를 제조하였다.. And 69.0 parts by weight of a halogenated epoxy resin (Dow Chemical DER 560) are placed in a reaction tank equipped with a stirrer, a thermometer, a cooling condenser and a dropping device. Then, when the flow is confirmed by heating and melting while supplying nitrogen or air, the temperature of the contents of the reactor is raised to 100-125 ° C, then 0.005 part of the polymerization inhibitor para-t-butyl catechol, 0.005 part of hydroquinone, And 0.12 parts by weight of acetyl acetate were added. Then, 14.0 parts by weight of methacrylic acid was added to the dropping funnel, and the solution was allowed to react while dropping the solution. After adding 1.87 parts by weight of a urethane acrylate resin at an acid value of 15 or less, 13.0 parts by weight of methyl methacrylate and 2.0 parts by weight of trimethylolpropane trimethacrylate were diluted to prepare a halogenated epoxy acrylate resin binder having a number average molecular weight of 7,500.
실시예 5 Example 5
할로겐화 에폭시 수지(국도화학 YDB-408) 34.5중량부와 할로겐화 에폭시 수지(우진고분자 CXB-400S) 34.5중량부를 교반기, 온도계, 냉각 콘덴서 및 적하 장치 등이 설치된 반응조에 넣는다. 그 다음 질소 또는 공기를 공급하면서 가열하고 용융시켜 유동이 확인되면 반응조 내용물의 온도를 100-125℃로 올린 다음 중합방지제 하이드로퀴논 0.01 중량부 및 반응촉매 크롬아세틸아세테이트0.10 중량부를 투입한 후, 메타아크릴산 12.0중량부를 적하 장치에 넣고 용액을 드로핑 반응시킨다. 산가 10 이하에서 우레탄 아크릴레이트수지 12.0 중량부를 추가 후, 메틸메타아크릴레이트 14.5중량부와 1,6-헥산디올디메타아크릴레이트 0.5중량부를 희석한 후 수 평균 분자량 6,500의 할로겐화 에폭시 아크릴레이트수지 바인더를 제조하였다.34.5 parts by weight of a halogenated epoxy resin (KODO CHEMICAL YDB-408) and 34.5 parts by weight of a halogenated epoxy resin (Woojin Polymer CXB-400S) are placed in a reaction vessel equipped with a stirrer, a thermometer, a cooling condenser and a dropping device. Then, the temperature of the contents of the reaction vessel was raised to 100-125 ° C. when the flow was confirmed by heating and melting while supplying nitrogen or air. Then, 0.01 part by weight of the polymerization inhibitor hydroquinone and 0.10 part by weight of the reaction catalyst chromium acetyl acetate were added, 12.0 parts by weight are put into a dropping device and subjected to dropping reaction. After adding 12.0 parts by weight of urethane acrylate resin at an acid value of 10 or less, 14.5 parts by weight of methyl methacrylate and 0.5 part by weight of 1,6-hexanediol dimethacrylate were diluted, and a halogenated epoxyacrylate resin binder having a number average molecular weight of 6,500 .
제조예 1Production Example 1
반응조에 실시예 1에서 제조된 바인더 99.89g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.01g, 1-히드록시-시클로헥실-페닐-케톤 0.1g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.After feeding 99.89 g of the binder prepared in Example 1, 0.01 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide and 0.1 g of 1-hydroxy-cyclohexyl-phenyl-ketone into a reaction tank, And stirred for 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 2Production Example 2
반응조에 실시예 1에서 제조된 바인더 99.94g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.06g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.94 g of the binder prepared in Example 1 and 0.06 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide were added to the reaction vessel, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 3Production Example 3
반응조에 실시예 1에서 제조된 바인더 99.0g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.3g, 1-히드록시-시클로헥실-페닐-케톤 0.2g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.5g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.In a reaction tank, 99.0 g of the binder prepared in Example 1, 0.3 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.2 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, and the mixture was stirred for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 4Production Example 4
반응조에 실시예 2에서 제조된 바인더 99.45g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.05g, 1-히드록시-시클로헥실-페닐-케톤 0.1g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.4g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.To the reaction tank, 99.45 g of the binder prepared in Example 2, 0.05 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.1 g of 1-hydroxy-cyclohexylphenyl- 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 5Production Example 5
반응조에 실시예 2에서 제조된 바인더 99.5g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.1g, 1-히드록시-시클로헥실-페닐-케톤 0.1g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.3g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.To the reaction tank were added 99.5 g of the binder prepared in Example 2, 0.1 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.1 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 6Production Example 6
반응조에 실시예 2에서 제조된 바인더 99.0g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.25g, 1-히드록시-시클로헥실-페닐-케톤 0.25g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.5g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.In a reaction tank, 99.0 g of the binder prepared in Example 2, 0.25 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.25 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, and the mixture was stirred for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 7Production Example 7
반응조에 실시예 3에서 제조된 바인더 99.39g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.01g, 1-히드록시-시클로헥실-페닐-케톤 0.1g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.5g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.In a reaction tank, 99.39 g of the binder prepared in Example 3, 0.01 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.1 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, and the mixture was stirred for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 8Production Example 8
반응조에 실시예 3에서 제조된 바인더 99.5g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.1g, 1-히드록시-시클로헥실-페닐-케톤 0.1g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.3g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.To the reaction tank, 99.5 g of the binder prepared in Example 3, 0.1 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.1 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 9Production Example 9
반응조에 실시예 3에서 제조된 바인더 99.25g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.25g, 1-히드록시-시클로헥실-페닐-케톤 0.25g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.25g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.In a reaction tank, 99.25 g of the binder prepared in Example 3, 0.25 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.25 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide (0.25 g) was added thereto, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 10Production Example 10
반응조에 실시예 4에서 제조된 바인더 99.69g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.01g, 1-히드록시-시클로헥실-페닐-케톤 0.1g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.2g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.In a reaction tank, 99.69 g of the binder prepared in Example 4, 0.01 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.1 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 11Production Example 11
반응조에 실시예 4에서 제조된 바인더 99.5g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.1g, 1-히드록시-시클로헥실-페닐-케톤 0.1g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.3g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.To the reaction tank were added 99.5 g of the binder prepared in Example 4, 0.1 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.1 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 12Production Example 12
반응조에 실시예 4에서 제조된 바인더 99.0g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.3g, 1-히드록시-시클로헥실-페닐-케톤 0.2g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.5g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.In a reaction tank, 99.0 g of the binder prepared in Example 4, 0.3 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.2 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, and the mixture was stirred for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 13Production Example 13
반응조에 실시예 5 99.49g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.01g, 1-히드록시-시클로헥실-페닐-케톤 0.1g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.4g 을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.In a reaction tank, 99.49 g of Example 5, 0.01 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.1 g of 1-hydroxy-cyclohexylphenyl-ketone, Trimethylbenzoyl) -phosphine oxide was added thereto, and the mixture was stirred for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 14Production Example 14
반응조에 실시예 5에서 제조된 바인더 99.4g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.15g, 1-히드록시-시클로헥실-페닐-케톤 0.15g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.3g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.In a reaction tank, 99.4 g of the binder prepared in Example 5, 0.15 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.15 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 15Production Example 15
반응조에 실시예 5에서 제조된 바인더 99.45g, 디페닐(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.25g, 1-히드록시-시클로헥실-페닐-케톤 0.25g, 페닐 비스(2,4,6-트리메틸벤조일)-포스핀 옥사이드 0.05g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.In the reaction tank, 99.45 g of the binder prepared in Example 5, 0.25 g of diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, 0.25 g of 1-hydroxy-cyclohexylphenyl-ketone, 4,6-trimethylbenzoyl) -phosphine oxide was added thereto, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 16Production Example 16
반응조에 실시예 1에서 제조된 바인더 99.89g, α,α-디메톡시-α-페닐아세토페논 0.01g, 메틸벤조일포르메이트 0.1g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.89 g of the binder prepared in Example 1, 0.01 g of?,? -Dimethoxy-? -Phenylacetophenone and 0.1 g of methylbenzoylformate were added to the reaction tank, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 17Production Example 17
반응조에 실시예 1에서 제조된 바인더 99.94g, α,α-디메톡시-α-페닐아세토페논 0.06g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.94 g of the binder prepared in Example 1 and 0.06 g of?,? -Dimethoxy-? -Phenylacetophenone were added to the reaction tank and stirred for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 18Production Example 18
반응조에 실시예 2에서 제조된 바인더 99.89g, α,α-디메톡시-α-페닐아세토페논 0.01g, 메틸벤조일포르메이트 0.1g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.89 g of the binder prepared in Example 2, 0.01 g of?,? -Dimethoxy-? -Phenylacetophenone and 0.1 g of methylbenzoylformate were added to the reaction tank, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 19Production Example 19
반응조에 실시예 2에서 제조된 바인더 99.94g, α,α-디메톡시-α-페닐아세토페논 0.06g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.94 g of the binder prepared in Example 2 and 0.06 g of?,? -Dimethoxy-? -Phenylacetophenone were added to the reaction tank and stirred for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 20Production example 20
반응조에 실시예 3에서 제조된 바인더 99.89g, α,α-디메톡시-α-페닐아세토페논 0.01g, 메틸벤조일포르메이트 0.1g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.89 g of the binder prepared in Example 3, 0.01 g of?,? -Dimethoxy-? -Phenylacetophenone and 0.1 g of methylbenzoylformate were added to the reaction tank, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 21Production Example 21
반응조에 실시예 3에서 제조된 바인더 99.94g, α,α-디메톡시-α-페닐아세토페논 0.06g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.94 g of the binder prepared in Example 3 and 0.06 g of?,? -Dimethoxy-? -Phenylacetophenone were added to the reaction tank, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 22Production Example 22
반응조에 실시예 4에서 제조된 바인더 99.89g, α,α-디메톡시-α-페닐아세토페논 0.01g, 메틸벤조일포르메이트 0.1g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.89 g of the binder prepared in Example 4, 0.01 g of?,? -Dimethoxy-? -Phenylacetophenone and 0.1 g of methylbenzoylformate were added to the reaction tank, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 23Production Example 23
반응조에 실시예 4에서 제조된 바인더 99.94g, α,α-디메톡시-α-페닐아세토페논 0.06g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.94 g of the binder prepared in Example 4 and 0.06 g of?,? -Dimethoxy-? -Phenylacetophenone were added to the reaction tank, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 24Production Example 24
반응조에 실시예 5에서 제조된 바인더 99.89g, α,α-디메톡시-α-페닐아세토페논 0.01g, 메틸벤조일포르메이트 0.1g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.89 g of the binder prepared in Example 5, 0.01 g of?,? -Dimethoxy-? -Phenylacetophenone and 0.1 g of methylbenzoylformate were added to the reaction tank, followed by stirring for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
제조예 25Production example 25
반응조에 실시예 5에서 제조된 바인더 99.94g, α,α-디메톡시-α-페닐아세토페논 0.06g을 투입한 후 10~30분동안 교반하였다. 제조된 수지를 일정한 나무성형틀에 붓고 UV-Fe, UV-Ga을 이용하여 경화시켜 인조대리석 칩용 수지를 제조하였다.99.94 g of the binder prepared in Example 5 and 0.06 g of?,? -Dimethoxy-? -Phenylacetophenone were added to the reaction tank and stirred for 10 to 30 minutes. The prepared resin was poured into a certain wooden mold and cured using UV-Fe and UV-Ga to prepare a resin for artificial marble chips.
실험 예 Experimental Example
상기 제조 예 1 내지 제조 예 20에서 제조된 인조대리석 칩용 수지의 경화성 및 내충격성을 측정하여 아래 표 1 내지 4에 게시하였다. The curability and impact resistance of the resins for artificial marble chips prepared in Preparation Examples 1 to 20 were measured and reported in Tables 1 to 4 below.
1One
1One
22
22
33
33
44
44
1.5cm1.5cm
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
2.0cm2.0cm
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
결과result
조건Condition
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
50cm50cm
70cm70cm
80cm80cm
결과result
55
55
66
66
77
77
88
88
1.5cm1.5cm
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
2.0cm2.0cm
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
결과result
조건Condition
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
50cm50cm
70cm70cm
80cm80cm
결과result
99
99
1010
1010
1111
1111
1212
예12Example 12
1.5cm1.5cm
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
2.0cm2.0cm
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
결과result
조건Condition
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
50cm50cm
70cm70cm
80cm80cm
결과result
1.5cm1.5cm
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
2.0cm2.0cm
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
양호Hardening
Good
우수Hardening
Great
결과result
조건Condition
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
50cm50cm
70cm70cm
80cm80cm
결과result
1.5cm1.5cm
불량Hardening
Bad
불량Bottom hardening
Bad
불량Hardening
Bad
불량Bottom hardening
Bad
불량Hardening
Bad
불량Bottom hardening
Bad
불량Hardening
Bad
불량Bottom hardening
Bad
2.0cm2.0cm
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
결과result
조건Condition
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
50cm50cm
70cm70cm
80cm80cm
결과result
2020
2121
2121
2222
2222
2323
2323
1.5cm1.5cm
불량Hardening
Bad
불량Bottom hardening
Bad
불량Hardening
Bad
불량Bottom hardening
Bad
불량Hardening
Bad
불량Bottom hardening
Bad
불량Hardening
Bad
불량Bottom hardening
Bad
2.0cm2.0cm
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
불량Hardening
Bad
결과result
조건Condition
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
(500g)Iron ball
(500 g)
50cm50cm
70cm70cm
80cm80cm
결과result
본 발명에 따르면 할로겐화 에폭시 수지를 특정 광개시제를 사용하여 UV램프를 이용하여 경화시키는 경우 고비중의 인조대리석 투명칩을 제조시 작업성, 기계적물성, 상용성, 가공성, 내약품성, 평활성이 우수한 인조대리석 칩용 수지를 얻을 수 있다.According to the present invention, when a halogenated epoxy resin is cured using a UV lamp using a specific photoinitiator, artificial marble transparent chips having high workability, mechanical properties, compatibility, processability, chemical resistance, A resin for chips can be obtained.
본 발명의 기존의 인조대리석 칩과 차별화된 가장 큰 특징은 내충격성을 향상시킴으로서 가공시 표면이 브리틀하여 크랙 및 깨지는 현상이 생기는 것을 막아줌으로써 기존제품보다 우수한 인조대리석을 얻을 수 있다는 것이다. The most distinguishing characteristic of the artificial marble chip of the present invention is that it improves the impact resistance, thereby preventing artificial marble from being cracked and cracked due to the brittle surface during processing.
Claims (10)
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6. The method of claim 5, wherein the step of preparing the halogenated epoxy acrylate resin comprises reacting the halogenated epoxy resin with acrylic acid and then reacting with the isocyanate.
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JPH05147993A (en) * | 1991-11-26 | 1993-06-15 | Dainippon Ink & Chem Inc | Resin composition for artificial marble and artificial marble using the same |
KR100750514B1 (en) * | 2006-07-24 | 2007-08-20 | 제일모직주식회사 | Resin composition for artificial marble chip having high specific gravity and high index of refraction |
WO2009108001A2 (en) * | 2008-02-28 | 2009-09-03 | Kim Young-Min | Resin composition for manufacturing marble chips, method for manufacturing marble chips using the same, and artificial marble made from marble chips |
KR20110004158A (en) * | 2009-07-07 | 2011-01-13 | (주)엘지하우시스 | Resin composition, transparent marble chip comprising cured material thereof and artificial marble |
KR101172385B1 (en) * | 2008-12-15 | 2012-08-08 | 제일모직주식회사 | Marble Chip for Artificial Marble, Method for Preparing the Same and Artificial Marble Containing the Same |
KR20150137587A (en) * | 2014-05-30 | 2015-12-09 | 백종구 | Photocurable Resin Composition for Manufacturing Photocured Tansparant Chips for Artificial Marble |
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2016
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05147993A (en) * | 1991-11-26 | 1993-06-15 | Dainippon Ink & Chem Inc | Resin composition for artificial marble and artificial marble using the same |
KR100750514B1 (en) * | 2006-07-24 | 2007-08-20 | 제일모직주식회사 | Resin composition for artificial marble chip having high specific gravity and high index of refraction |
WO2009108001A2 (en) * | 2008-02-28 | 2009-09-03 | Kim Young-Min | Resin composition for manufacturing marble chips, method for manufacturing marble chips using the same, and artificial marble made from marble chips |
KR101172385B1 (en) * | 2008-12-15 | 2012-08-08 | 제일모직주식회사 | Marble Chip for Artificial Marble, Method for Preparing the Same and Artificial Marble Containing the Same |
KR20110004158A (en) * | 2009-07-07 | 2011-01-13 | (주)엘지하우시스 | Resin composition, transparent marble chip comprising cured material thereof and artificial marble |
KR20150137587A (en) * | 2014-05-30 | 2015-12-09 | 백종구 | Photocurable Resin Composition for Manufacturing Photocured Tansparant Chips for Artificial Marble |
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