KR20170141439A - Thin film forming apparatus - Google Patents

Thin film forming apparatus Download PDF

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KR20170141439A
KR20170141439A KR1020160074464A KR20160074464A KR20170141439A KR 20170141439 A KR20170141439 A KR 20170141439A KR 1020160074464 A KR1020160074464 A KR 1020160074464A KR 20160074464 A KR20160074464 A KR 20160074464A KR 20170141439 A KR20170141439 A KR 20170141439A
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gas
raw material
retention chamber
thin film
chamber
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KR1020160074464A
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KR101819555B1 (en
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곽동주
신동호
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주식회사 에이치비테크놀러지
주식회사 에이치비테크놀러지
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Priority to KR1020160074464A priority Critical patent/KR101819555B1/en
Priority to CN201710179143.7A priority patent/CN107523803B/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a thin film forming apparatus for supplying a chemical vapor deposition (CVD) raw material gas onto a surface of a substrate, irradiating the supplied raw material gas with laser light, and forming a thin film on the substrate by the raw material gas reacted with the laser light. The thin film forming apparatus comprises: a raw material supply means provided with a chamber unit on an upper portion of the substrate, and supplying a raw material gas to the chamber unit; a gas retention chamber for retaining the raw material gas supplied to the raw material supply means; a first exhaust unit for exhausting a raw material gas discharged from the gas retention chamber; and a second exhaust unit for exhausting a gas and the raw material gas. In addition, the thin film forming apparatus further comprises a means for forming a uniform pressure in all directions of the gas retention chamber to make gas flow of the raw material gas uniform in the gas retention chamber.

Description

박막형성 장치{Thin film forming apparatus}[0001] THIN FILM FORMING APPARATUS [0002]

본 발명은 박막형성 장치에 관한 것으로서, 더욱 상세하게는 포토마스크, 액정기판 등과 같은 평면 패턴구조를 갖는 기판의 결함을 보정하는데 사용되는 박막형성 장치에 관한 것이다. The present invention relates to a thin film forming apparatus, and more particularly, to a thin film forming apparatus used for correcting defects of a substrate having a planar pattern structure such as a photomask, a liquid crystal substrate, and the like.

도 1은 종래의 박막형성 장치의 단면도이고, 도 2는 종래의 박막형성 장치의 평면도로서 도 1 내지 도 2를 참조하면 종래의 박막형성 장치는 기판(1)의 상부에는 챔버 유닛(20)이 구비되고, 상기 챔버 유닛(20)에는 원료가스를 공급하는 원료공급수단(30)과, 상기 원료공급수단(30)으로 공급된 원료가스를 체류시키는 가스체류챔버(40)와, 상기 가스체류챔버(40)에서 배출되는 원료가스를 배기하는 제1배기부(50)와, 원료가스가 외부가스와 교란되는 것을 방지하기 위해 외부 공기를 차단하는 제1가스토출부(60)와, 가스 및 원료가스를 배기하는 제2배기부(70)로 형성된다. FIG. 1 is a cross-sectional view of a conventional thin film forming apparatus. FIG. 2 is a plan view of a conventional thin film forming apparatus. Referring to FIGS. 1 and 2, a conventional thin film forming apparatus includes a chamber unit 20 (30) for supplying a raw material gas to the chamber unit (20), a gas retention chamber (40) for retention of a source gas supplied to the raw material supply means (30), and a gas retention chamber A first exhaust part 50 for exhausting the raw material gas discharged from the exhaust gas purifying device 40, a first gas discharging part 60 for blocking external air to prevent the source gas from being disturbed by the external gas, And a second exhaust portion 70 for exhausting gas.

상기 제1배기부(50), 제1가스토출부(60) 및 제2배기부(70)가 상기 가스체류챔버(40)로 공급되는 원료가스의 공급 방향과 같은 평행선상(2)에서 상기 원료가스의 공급 방향의 후방으로 형성됨으로써 상기 챔버 유닛(20)의 3/4 분면으로 유동(gas flow)이 형성되고 가스체류챔버(40)의 압력이 불균형하여 레이저 광의 위치로 흐르는 원료가스의 양이 적어 반응성이 낮아지는 문제점이 있다.The first exhaust part 50, the first gas discharging part 60 and the second exhaust part 70 are arranged in parallel on the parallel line 2 as the supply direction of the source gas supplied to the gas retention chamber 40, The gas flow is formed in the third quarter of the chamber unit 20 by being formed behind the feed gas supply direction and the pressure of the gas retention chamber 40 is unbalanced so that the amount of the raw material gas flowing to the position of the laser light There is a problem that the reactivity is lowered.

대한민국 등록특허 10-0381940호Korean Patent No. 10-0381940 대한민국 등록특허 10-0547500호Korean Patent No. 10-0547500

따라서 본 발명은 전술한 바와 같은 종래기술의 문제점을 해결하기 위해 안출된 것으로, 본 발명은 가스체류챔버의 전방향으로 균일한 압력이 형성되도록 설계되어 가스체류챔버 내의 CVD(화학 증착) 원료가스의 유동(gas flow)이 균일하게 됨으로써 원료가스와 레이저 광의 반응성이 향상된 박막형성 장치를 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art as described above, and it is an object of the present invention to provide an apparatus and a method for manufacturing a gas- And an object of the present invention is to provide a thin film forming apparatus in which reactivity between a raw material gas and laser light is improved by making a gas flow uniform.

그러나 본 발명의 목적은 상기에 언급된 목적으로 제한되지 않으며, 언급되지 않은 또 다른 목적은 아래의 기재로부터 당업자에게 명확하게 이해될 수 있을 것이다.However, the object of the present invention is not limited to the above-mentioned object, and another object which is not mentioned can be understood by those skilled in the art from the following description.

상기와 같은 목적을 달성하기 위한 본 발명은 기판의 표면상에 CVD(화학 증착) 원료가스가 공급되고, 상기 공급된 원료가스에 레이저 광을 조사하며 상기 레이저 광과 반응한 상기 원료 가스에 의해 상기 기판에 박막을 형성시키는 박막형성 장치에 있어서, 상기 기판의 상부에 챔버 유닛이 구비되고, 상기 챔버 유닛에는 원료가스를 공급하는 원료공급수단과, 상기 원료공급수단으로 공급된 원료가스를 체류시키는 가스체류챔버와, 상기 가스체류챔버에서 배출되는 원료가스를 배기하는 제1배기부와, 가스 및 원료가스를 배기하는 제2배기부로 형성되고, 상기 가스체류챔버 내에서 상기 원료가스의 유동(gas flow)을 균일하게 하기 위해서 상기 가스체류챔버의 전방향으로 균일한 압력을 형성시키는 수단이 형성되는 것을 특징으로 하는 박막형성 장치가 제공된다. According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: providing a CVD (chemical vapor deposition) source gas on a surface of a substrate, irradiating the supplied source gas with laser light, A thin film forming apparatus for forming a thin film on a substrate, comprising: a chamber unit provided on the substrate; a chamber supply unit for supplying a source gas to the chamber unit; a gas supply unit for supplying a gas And a second exhaust part for exhausting a gas and a raw material gas, wherein the gas flow in the gas retention chamber is defined as a gas flow Forming means for forming a uniform pressure in all directions of the gas retention chamber is formed in order to make the gas retention chamber uniform It is a ball.

또한, 상기 가스체류챔버의 전방향으로 균일한 압력을 형성시키는 수단은 상기 원료공급수단에서 상기 가스체류챔버로 공급되는 원료가스의 공급 방향과 같은 평행선상에서 상기 원료가스의 공급 방향 전방(180°)으로 상기 제1배기부가 형성되고, 상기 평행선상에서 상기 제1배기부의 전방으로 상기 제1 가스토출부가 형성되며, 상기 원료가스가 공급되는 방향의 후방에서 상기 평행선상을 기준으로 양측으로 대칭되게 제2배기부가 각각 형성되는 것을 특징으로 하는 박막형성 장치가 제공된다. The means for forming a uniform pressure in the forward direction of the gas retention chamber may include means for generating a uniform pressure in the forward direction of the gas retention chamber, Wherein the first exhaust part is formed on the parallel line and the first gas discharging part is formed in front of the first exhaust part on the parallel line, And an exhaust part are respectively formed on the substrate.

또한, 상기 챔버 유닛에는 상기 기판의 표면 측으로 공기를 분사하는 공기 분사 홀이 상기 가스체류챔버 주변부에 하나 이상 형성되는 것을 특징으로 하는 박막형성 장치가 제공된다.Also, at least one air injection hole for injecting air toward the surface side of the substrate is formed in the chamber unit at the periphery of the gas retention chamber.

또한, 상기 원료도입수단에는 상기 가스체류챔버에 연결되어 원료가스를 공급하는 원료공급구가 형성되되, 상기 원료공급구는 상기 가스체류챔버에 기울어지게 연결되어 원료가스가 상기 가스체류챔버의 내주면을 따라 소용돌이치는 모양(swirling)으로 공급되는 것을 특징으로 하는 박막형성 장치가 제공된다. The raw material introduction means is connected to the gas retention chamber to form a raw material supply port for supplying the raw material gas. The raw material supply port is inclined to the gas retention chamber so that the raw material gas flows along the inner peripheral surface of the gas retention chamber Wherein the substrate is supplied in a swirling manner.

또한, 상기 원료도입수단에는 상기 가스체류챔버에 연결되어 원료가스를 공급하는 원료공급구가 형성되되, 상기 원료공급구의 내주면에는 나선형의 나선홈이 형성되어 공급되는 상기 원료가스의 단면형상이 회전되는 것을 특징으로 하는 박막형성 장치가 제공된다. The raw material introduction means is provided with a raw material supply port connected to the gas retention chamber to supply the raw material gas. A helical spiral groove is formed in the inner circumferential surface of the raw material supply port to rotate the cross- A thin film forming apparatus is provided.

본 발명의 특징 및 이점들은 첨부도면에 의거한 다음의 상세한 설명으로 더욱 명백해질 것이다.The features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings.

이에 앞서 본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이고 사전적인 의미로 해석되어서는 아니 되며, 발명자가 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합되는 의미와 개념으로 해석되어야 한다.Prior to that, terms and words used in the present specification and claims should not be construed in a conventional and dictionary sense, and the inventor may properly define the concept of the term in order to best explain its invention It should be construed as meaning and concept consistent with the technical idea of the present invention.

이상에서 살펴본 바와 같이 본 발명에 따른 에 따르면, 원료가스와 레이저 광의 반응성이 향상되어 레이저 광의 얇은 선폭에서도 원활한 박막형성이 가능하고, 종래의 박막형성 장치 보다 작은 량의 원료가스를 사용하여도 동일한 결과를 얻을 수 있어 원료를 절감하여 생산비가 감소하며, 박막 주변에 생성되는 비산 파티클의 생성이 감소하고 성장형 이물 발생이 감소하는 효과가 있다.As described above, according to the present invention, the reactivity between the raw material gas and the laser beam is improved, so that a smooth thin film can be formed even in a thin line width of a laser beam. Even if a raw material gas of a smaller amount than a conventional thin film forming apparatus is used, The production cost is reduced by reducing the raw material, and the generation of scattered particles generated around the thin film is reduced and the generation of growth type foreign matter is reduced.

도 1은 종래의 박막형성 장치의 단면도이다.
도 2는 종래의 박막형성 장치의 평면도이다.
도 3은 본 발명에 따른 박막형성 장치를 설명하기 위한 단면도이다.
도 4는 본 발명에 따른 박막형성 장치를 설명하기 위한 평면도이다.
도 5는 본 발명의 제2실시예를 설명하기 위한 평면도이다.
도 6은 본 발명의 제3실시예를 설명하기 위한 평면도이다. 1 is a cross-sectional view of a conventional thin film forming apparatus.
2 is a plan view of a conventional thin film forming apparatus.
3 is a cross-sectional view for explaining a thin film forming apparatus according to the present invention.
4 is a plan view for explaining a thin film forming apparatus according to the present invention.
5 is a plan view for explaining a second embodiment of the present invention.
6 is a plan view for explaining a third embodiment of the present invention.

이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한다. 이 과정에서 도면에 도시된 선들의 두께나 구성요소의 크기 등은 설명의 명료성과 편의상 과장되게 도시되어 있을 수 있다.Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In this process, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation.

또한, 후술되는 용어들은 본 발명에서의 기능을 고려하여 정의된 용어들로서 이는 사용자, 운용자의 의도 또는 관례에 따라 달라질 수 있다. 그러므로 이러한 용어들에 대한 정의는 본 명세서 전반에 걸친 내용을 토대로 하여 내려져야 할 것이다.In addition, the terms described below are defined in consideration of the functions of the present invention, which may vary depending on the intention or custom of the user, the operator. Therefore, definitions of these terms should be made based on the contents throughout this specification.

아울러, 아래의 실시예는 본 발명의 권리범위를 한정하는 것이 아니라 본 발명의 청구범위에 제시된 구성요소의 예시적인 사항에 불과하며, 본 발명의 명세서 전반에 걸친 기술사상에 포함되고 청구범위의 구성요소에서 균등물로서 치환 가능한 구성요소를 포함하는 실시예는 본 발명의 권리범위에 포함될 수 있다.In addition, the following embodiments are not intended to limit the scope of the present invention, but merely as exemplifications of the constituent elements set forth in the claims of the present invention, and are included in technical ideas throughout the specification of the present invention, Embodiments that include components replaceable as equivalents in the elements may be included within the scope of the present invention.

도 3은 본 발명의 제1실시예를 설명하기 위한 단면도이다. 도 4는 본 발명의 제1실시예를 설명하기 위한 평면도이다. 도 5는 본 발명의 제2실시예를 설명하기 위한 평면도이다. 도 6은 본 발명의 제3실시예를 설명하기 위한 평면도이다. 3 is a cross-sectional view for explaining the first embodiment of the present invention. 4 is a plan view for explaining the first embodiment of the present invention. 5 is a plan view for explaining a second embodiment of the present invention. 6 is a plan view for explaining a third embodiment of the present invention.

먼저, 본 발명을 설명하기에 앞서 종래기술과 동일한 부분에 대해서는 동일한 부호를 부여하고, 중복되는 설명은 생략한다. First, before describing the present invention, the same reference numerals are given to the same parts as those of the prior art, and redundant explanations are omitted.

도 3 내지 도 4를 참조하면, 상기 기판(1)의 상부에 챔버 유닛(20)이 구비되고, 상기 챔버 유닛(20)에는 원료가스를 공급하는 원료공급수단(30)과, 상기 원료공급수단(30)으로 공급된 원료가스를 체류시키는 가스체류챔버(40)와, 상기 가스체류챔버(40)에서 배출되는 원료가스를 배기하는 제1배기부(50)와, 가스 및 원료가스를 배기하는 제2배기부(70)로 형성된다. 3 to 4, a chamber unit 20 is provided on the substrate 1, and the chamber unit 20 is provided with a raw material supply means 30 for supplying a raw material gas, A gas retention chamber 40 for retaining the source gas supplied to the gas retention chamber 30, a first exhaust section 50 for exhausting the source gas discharged from the gas retention chamber 40, And the second exhaust portion 70 is formed.

상기 제1배기부(50)와 제2배기부(60)에 의해서 박막형성 시에 발생되는 가스가 주위로 누설되지 않는다.The gas generated during the formation of the thin film by the first exhaust part 50 and the second exhaust part 60 is not leaked to the surroundings.

또한, 상기 기판(1)의 표면 측으로 공기를 분사하는 공기 분사 홀(80)이 상기 가스체류챔버(40) 주변부에 하나 이상 형성되고, 상기 공기 분사 홀(80)은 상기 가스체류챔버(40) 주변부에 선택적으로 설치가능하다.At least one air injection hole 80 for injecting air toward the surface side of the substrate 1 is formed in the periphery of the gas retention chamber 40. The air injection hole 80 is formed in the gas retention chamber 40, And selectively installed in the peripheral portion.

상기 공기 분사 홀(80)에서 분사되는 공기에 의해서 박막 주변에 생성되는 비산 파티클의 생성을 최소화시킬 수 있으며, 성장형 이물 발생을 억제할 수 있다.The generation of scattered particles generated around the thin film can be minimized by the air injected from the air injection hole 80 and generation of growth type foreign matter can be suppressed.

또한, 상기 챔버 유닛(20)의 저면과 상기 기판(1) 사이의 갭(gap)을 통하여 상기 가스가 배기 되거나 토출 되도록 챔버 유닛(20)의 저면에는 원형의 트렌치가 형성된다. A circular trench is formed on the bottom surface of the chamber unit 20 so that the gas is exhausted or discharged through a gap between the bottom surface of the chamber unit 20 and the substrate 1.

따라서 상기 제1배기부(60)는 상기 챔버 유닛(20)의 저면에 형성된 원형의 트렌치(51)와 상기 트렌치(51)에 형성된 트렌치홀(52)과 연결되는 관통공(53)으로 이루어진다.The first exhaust unit 60 includes a circular trench 51 formed on the bottom surface of the chamber unit 20 and a through hole 53 connected to the trench hole 52 formed in the trench 51.

또한, 상기 제2배기부(70)는 상기 챔버 유닛(20)의 저면에 형성된 트렌치(71)와 상기 트렌치(71)에 형성된 트렌치홀(72)과 연결되어 상기 가스 및 원료가스를 배기시키는 관통공(73)으로 이루어진다. The second exhaust part 70 is connected to the trench 71 formed in the bottom surface of the chamber unit 20 and the trench hole 72 formed in the trench 71 to penetrate the gas and the source gas And a ball 73.

상기 가스체류챔버(40)의 상부에는 상기 레이저 광이 투과되도록 레이저투과창(42)이 설치되고, 상기 가스체류챔버(40)와 연결되어 퍼지(purge)용의 가스를 공급하는 제2가스토출구(41)가 형성된다.A laser transmissive window 42 is provided in the upper part of the gas retention chamber 40 to allow the laser light to pass therethrough and is connected to the gas retention chamber 40 to supply a purge gas. (41) is formed.

상기 퍼지용의 가스나 에어 커튼용의 가스로서는 N₂, Ar, He등의 불활성 가스가 사용되는 것이 바람직하고, 레이저 광과 반응하여 박막을 형성시키는 원료가스로는

Figure pat00001
,
Figure pat00002
등이 사용되는 것이 바람직하다. As the gas for purge or the gas for air curtain, an inert gas such as N 2, Ar, or He is preferably used, and as the material gas for forming a thin film by reaction with laser light
Figure pat00001
,
Figure pat00002
And the like are preferably used.

상기 제1배기부(50)가 상기 원료공급수단(30)에서 상기 가스체류챔버(40)로 공급되는 원료가스의 공급 방향과 같은 평행선상(2)에서 상기 원료가스의 공급 방향 전방(180°)으로 형성된다.The first exhaust part 50 is located in a parallel line 2 that is the same as the supply direction of the raw material gas supplied from the raw material supply means 30 to the gas retention chamber 40, .

또한, 상기 원료가스를 공급하는 방향의 후방에 상기 평행선상(2)을 기준으로 양측으로 대칭되게 제2배기부(70)가 각각 형성된다. In addition, second exhaust portions 70 are formed symmetrically on both sides of the parallel line 2 on the rear side in the direction of supplying the source gas.

따라서 가스체류챔버(40)의 전방향에 균일한 압력이 유지됨으로써 상기 가스체류챔버 내에서 상기 원료가스의 유동(gas flow)이 균일하게 된다.Accordingly, a uniform pressure is maintained in all directions of the gas retention chamber 40, so that the gas flow of the material gas in the gas retention chamber becomes uniform.

이에 따라 레이저 광의 위치로 유동되는 원료가스의 양이 향상되어 높은 반응을 유도할 수 있기 때문에 레이저 광의 얇은 선폭에서도 원활한 박막형성이 가능하고, 종래의 박막형성 장치 보다 작은 량의 원료가스를 사용하여도 동일한 결과를 얻을 수 있어 원료를 절감하여 생산비를 절감할 수 있다.Accordingly, since the amount of the raw material gas flowing to the position of the laser light can be improved and a high reaction can be induced, a smooth thin film can be formed even in a thin line width of the laser light. The same result can be obtained, so that the raw material can be saved and the production cost can be reduced.

도 3 및 도 5를 참조하면, 상기 원료도입수단(30)에는 상기 가스체류챔버(40)에 연결되어 원료가스를 공급하는 원료공급구(31)가 형성된다. 3 and 5, the raw material introducing means 30 is connected to the gas retention chamber 40 to form a raw material supply port 31 for supplying the raw material gas.

상기 원료공급구(31)는 상기 가스체류챔버(40)에 기울어지게 연결되어 원료가스가 상기 가스체류챔버(40)의 내주면을 따라 소용돌이치는 모양(swirling)으로 공급되어 원료가스의 유동 거리가 증가되며 이에 따라 원료가스가 레이저 광에 노출되는 시간이 늘어나게 됨으로써 반응성이 향상되어 효과적으로 상기 기판(1)에 박막이 형성될 수 있다. The raw material supply port 31 is slantly connected to the gas retention chamber 40 so that the raw material gas is supplied in a swirling manner along the inner peripheral surface of the gas retention chamber 40 to increase the flow distance of the raw material gas Accordingly, the time for exposing the raw material gas to the laser light is increased, so that the reactivity is improved, and the thin film can be effectively formed on the substrate 1.

또한, 도 3 및 도 6을 참조하면 상기 원료공급구(31)의 내주면에는 나선형의 나선홈(32)이 형성되어 공급되는 상기 원료가스의 단면형상이 회전되어 원료가스의 유동 거리가 증가되며 이에 따라 원료가스가 레이저 광에 노출되는 시간이 늘어나게 됨으로써 반응성이 향상되어 효과적으로 상기 기판(1)에 박막이 형성될 수 있다. 3 and 6, a spiral spiral groove 32 is formed in the inner circumferential surface of the raw material supply port 31 to rotate the cross-sectional shape of the raw material gas to increase the flow distance of the raw material gas. Accordingly, the time for which the source gas is exposed to laser light is increased, so that the reactivity is improved, and a thin film can be effectively formed on the substrate 1.

이상 본 발명을 구체적인 실시예를 통하여 상세히 설명하였으나, 이는 본 발명을 구체적으로 설명하기 위한 것으로, 본 발명은 이에 한정되지 않으며, 본 발명의 기술적 사상 내에서 당 분야의 통상의 지식을 가진 자에 의해 그 변형이나 개량이 가능함이 명백하다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the same is by way of illustration and example only and is not to be construed as limiting the present invention. It is obvious that the modification or improvement is possible.

본 발명의 단순한 변형 내지 변경은 모두 본 발명의 범주에 속하는 것으로 본 발명의 구체적인 보호 범위는 첨부된 특허청구범위에 의해 명확해질 것이다.It is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

1 : 기판 20 : 챔버 유닛
30 : 원료공급수단 31 : 원료공급구
32 : 나선홈 40 : 가스체류챔버
41 : 제2가스토출구 42 : 레이저투과창
50 : 제1배기부 51,71 : 트렌치
52,72 : 트렌치홀 53,73 : 관통공
70 : 제2배기부 80 : 공기 분사 홀1: substrate 20: chamber unit
30: raw material supply means 31: raw material supply port
32: Spiral groove 40: Gas retention chamber
41: second gas discharge port 42: laser transmission window
50: first evacuation section 51, 71: trench
52,72: Trench hole 53,73: Through hole
70: Second exhaust part 80: Air injection hole

Claims (5)

기판의 표면상에 CVD(화학 증착) 원료가스가 공급되고, 상기 공급된 원료가스에 레이저 광을 조사하며 상기 레이저 광과 반응한 상기 원료 가스에 의해 상기 기판에 박막을 형성시키는 박막형성 장치에 있어서,
상기 기판의 상부에 챔버 유닛이 구비되고, 상기 챔버 유닛에는 원료가스를 공급하는 원료공급수단과, 상기 원료공급수단으로 공급된 원료가스를 체류시키는 가스체류챔버와, 상기 가스체류챔버에서 배출되는 원료가스를 배기하는 제1배기부와, 가스 및 원료가스를 배기하는 제2배기부로 형성되고,
상기 가스체류챔버 내에서 상기 원료가스의 유동(gas flow)을 균일하게 하기 위해서 상기 가스체류챔버의 전방향으로 균일한 압력을 형성시키는 수단이 형성되는 것을 특징으로 하는 박막형성 장치.
A thin film forming apparatus for supplying a CVD (chemical vapor deposition) source gas onto a surface of a substrate, irradiating the supplied source gas with laser light, and forming a thin film on the substrate by the source gas reacted with the laser light ,
Wherein the chamber unit is provided with a chamber unit on an upper portion of the substrate, the chamber unit is provided with a raw material supply means for supplying a raw material gas, a gas retention chamber for retaining the raw material gas supplied to the raw material supply means, A first exhaust part for exhausting the gas, and a second exhaust part for exhausting the gas and the raw material gas,
Wherein means for forming a uniform pressure in all directions of the gas retention chamber is formed in order to uniformize the gas flow of the material gas in the gas retention chamber.
제1항에 있어서, 상기 가스체류챔버의 전방향으로 균일한 압력을 형성시키는 수단은,
상기 원료공급수단에서 상기 가스체류챔버로 공급되는 원료가스의 공급 방향과 같은 평행선상에서 상기 원료가스의 공급 방향 전방(180°)으로 상기 제1배기부가 형성되고, 상기 원료가스가 공급되는 방향의 후방에서 상기 평행선상을 기준으로 양측으로 대칭되게 제2배기부가 각각 형성되는 것을 특징으로 하는 박막형성 장치.
2. The apparatus according to claim 1, wherein the means for forming a uniform pressure in the forward direction of the gas retention chamber comprises:
The first exhaust part is formed at a position in front of the feed direction of the raw material gas (180 DEG) on the same parallel line as the feed direction of the raw material gas supplied to the gas retention chamber in the raw material supply means, Wherein the second exhaust part is symmetrically formed on both sides of the parallel line.
제1항에 있어서, 상기 챔버 유닛에는,
상기 기판의 표면 측으로 공기를 분사하는 공기 분사 홀이 상기 가스체류챔버 주변부에 하나 이상 형성되는 것을 특징으로 하는 박막형성 장치.
The apparatus according to claim 1,
Wherein at least one air injection hole for spraying air toward the surface side of the substrate is formed in the periphery of the gas retention chamber.
제1항에 있어서,
상기 원료도입수단에는 상기 가스체류챔버에 연결되어 원료가스를 공급하는 원료공급구가 형성되되, 상기 원료공급구는 상기 가스체류챔버에 기울어지게 연결되어 원료가스가 상기 가스체류챔버의 내주면을 따라 소용돌이치는 모양(swirling)으로 공급되는 것을 특징으로 하는 박막형성 장치.
The method according to claim 1,
The raw material introduction means is connected to the gas retention chamber to form a raw material supply port for supplying the raw material gas. The raw material supply port is inclined to the gas retention chamber so that the raw material gas swirls along the inner peripheral surface of the gas retention chamber And is supplied in a swirling manner.
제1항에 있어서,
상기 원료도입수단에는 상기 가스체류챔버에 연결되어 원료가스를 공급하는 원료공급구가 형성되되, 상기 원료공급구의 내주면에는 나선형의 나선홈이 형성되어 공급되는 상기 원료가스의 단면형상이 회전되는 것을 특징으로 하는 박막형성 장치.The method according to claim 1,
The raw material introduction means is provided with a raw material supply port connected to the gas retention chamber to supply the raw material gas. A helical spiral groove is formed on the inner circumferential surface of the raw material supply port, and the cross-sectional shape of the raw material gas to be supplied is rotated .
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