CN107523803A - Film forming device - Google Patents
Film forming device Download PDFInfo
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- CN107523803A CN107523803A CN201710179143.7A CN201710179143A CN107523803A CN 107523803 A CN107523803 A CN 107523803A CN 201710179143 A CN201710179143 A CN 201710179143A CN 107523803 A CN107523803 A CN 107523803A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
Abstract
For realizing that the present invention of purpose as described above provides a kind of film forming device,CVD (chemical vapor deposition) unstrpped gas is supplied on to the surface of substrate,Laser is irradiated to the above-mentioned raw materials gas supplied,Utilize the above-mentioned raw materials gas to be reacted with above-mentioned laser,Film is formed in aforesaid substrate,It is characterized in that,The top of aforesaid substrate is provided with chamber unit,Above-mentioned chamber unit by base feed gas raw material feed mechanism,The gas for being detained the unstrpped gas supplied to above-mentioned raw materials feed mechanism is detained chamber,The first exhaust portion for discharging the unstrpped gas for being detained chamber discharge from above-mentioned gas is formed with the second exhaust portion for discharging gas and unstrpped gas,Above-mentioned film forming device forms the mechanism that uniform pressure is formed to the front direction of above-mentioned gas delay chamber,The flowing (gas flow) of above-mentioned chemical vapor deposition unstrpped gas is set to become uniform to be detained the inside of chamber in above-mentioned gas.
Description
Technical field
The present invention relates to film forming device, and in more detail, be related to has plane for correction optical mask, crystal liquid substrate etc.
The film forming device of the defects of substrate of patterning.
Background technology
Fig. 1 be conventional film forming device sectional view, Fig. 2 be conventional film forming device top view, reference
Fig. 1 to Fig. 2, in conventional film forming device, chamber unit 20, above-mentioned chamber unit 20 are provided with the top of substrate 1
Including：Raw material feed mechanism 30, for base feed gas；Gas is detained chamber 40, for making to above-mentioned raw materials feed mechanism
The unstrpped gas of 30 supplies is detained；First exhaust portion 50, the unstrpped gas be detained chamber 40 for discharging above-mentioned gas and discharged；The
One gas discharge section 60, for obstructing extraneous air, to prevent unstrpped gas from mutually obscuring with extraneous gas；And second exhaust portion
70, for discharging gas and unstrpped gas.
On the direction of the supply identical parallel lines 2 of the unstrpped gas with being detained the supply of chamber 40 to above-mentioned gas, upwards
The rear of the direction of the supply of unstrpped gas is stated formed with above-mentioned first exhaust portion 50, first gas discharge unit 60 and second exhaust portion
70, so as to above-mentioned chamber unit 20 3/4 etc. facet formed air-flow (gas flow), due to gas be detained chamber 40 pressure
Power is unbalanced, thus the amount of the unstrpped gas flowed to the position of laser is few, the problem of causing reactive step-down.
Prior art literature
Patent document
(patent document 1) Korean granted patent 10-0381940
(patent document 2) Korean granted patent 10-0547500
The content of the invention
Therefore, the present invention proposes to solve problem of the prior art as described above, it is an object of the present invention to carry
For following film forming device, the front direction for being designed to be detained chamber to gas forms uniform pressure, so that gas is stagnant
Staying the flowing (gas flow) of chemical vapor deposition (CVD) unstrpped gas in chamber becomes uniform, with improve unstrpped gas and
The reactivity of laser.
But the purpose of the present invention is not limited to above-mentioned mentioned purpose, NM other purposes can be from following
It is clearly understood that in contents by general technical staff of the technical field of the invention.
For realizing that the present invention of purpose as described above provides a kind of film forming device, to the surface of substrate on supply
Chemical vapor deposition unstrpped gas, laser is irradiated to the above-mentioned chemical vapor deposition unstrpped gas supplied, swashed using with above-mentioned
The above-mentioned chemical vapor deposition unstrpped gas that light reacts, form film in aforesaid substrate, it is characterised in that in aforesaid substrate
Top be provided with chamber unit, above-mentioned chamber unit is detained chamber, first exhaust portion and second by raw material feed mechanism, gas
Exhaust portion is formed, above-mentioned raw materials feed mechanism base feed gas, and above-mentioned gas are detained chamber and made to above-mentioned raw materials feed mechanism
The unstrpped gas of supply is detained, the unstrpped gas of above-mentioned first exhaust portion discharge above-mentioned gas delay chamber discharge, and above-mentioned second
Exhaust portion discharges gas and unstrpped gas, and above-mentioned film forming device is formed to be formed to the front direction of above-mentioned gas delay chamber
The mechanism of even pressure, become the flowing of above-mentioned chemical vapor deposition unstrpped gas to be detained the inside of chamber in above-mentioned gas
Obtain uniformly.
Also, the present invention provides a kind of film forming device, it is characterised in that is being detained the front of chamber to above-mentioned gas
To being formed in the mechanism of uniform pressure, in the unstripped gas with being detained chamber supply from above-mentioned raw materials feed mechanism to above-mentioned gas
On the direction of the supply identical parallel lines of body, (180 °) are formed with above-mentioned first row in front of the direction of the supply of above-mentioned unstrpped gas
Gas portion, on above-mentioned parallel lines, to above-mentioned first exhaust portion front formed with above-mentioned first gas discharge unit, it is above-mentioned supplying
The rear in the direction of unstrpped gas, on the basis of above-mentioned parallel lines, both sides are symmetrically respectively formed with second exhaust portion.
Also, the present invention provides a kind of film forming device, it is characterised in that in above-mentioned chamber unit, in above-mentioned gas
Body is detained the periphery of chamber formed with more than one air jet hole, face side of the above-mentioned air jet hole to aforesaid substrate
Spray air.
Also, the present invention provides a kind of film forming device, it is characterised in that above-mentioned raw materials feed mechanism formed with it is upper
State gas and be detained chamber and be connected and carry out the raw material supply mouth of base feed gas, above-mentioned raw materials supply mouth obliquely with above-mentioned gas
It is detained chamber to be connected, unstrpped gas is detained the inner peripheral surface of chamber along above-mentioned gas and entered with the apperance (swirling) turned round and round
Row supply.
Also, the present invention provides a kind of film forming device, it is characterised in that above-mentioned raw materials feed mechanism formed with it is upper
State gas and be detained chamber and be connected and carry out the raw material supply mouth of base feed gas, above-mentioned raw materials supply mouth inner peripheral surface formed with
Spiral helicla flute, rotated the cross sectional shape of the above-mentioned raw materials gas of supply.
The feature and multiple advantages of the present invention more becomes clear and definite by following detailed description with reference to the accompanying drawings.
Before this, the term used in this specification and the claimed scope of invention or vocabulary should not be construed as usual
And the implication on dictionary, it can should suitably define term in line with inventor in order to illustrate the invention of its own in optimal method
The principle of concept is construed to the implication and concept for meeting the technological thought of the present invention.
Watch as more than, according to the present invention, have the effect that：Unstrpped gas and the reactivity of laser are improved,
So as to also can swimmingly form film in the thin line width of laser, it is possible to use than the conventional lesser amount of original of film forming device
Gas is expected to obtain identical result, to reduce raw material, reduces production cost, reduces disperse particle of the generation on film periphery,
And reduce the generation of growth type foreign matter.
Brief description of the drawings
Fig. 1 is the sectional view of conventional film forming device.
Fig. 2 is the top view of conventional film forming device.
Fig. 3 is the sectional view for illustrating the film forming device of the present invention.
Fig. 4 is the top view for illustrating the film forming device of the present invention.
Fig. 5 is the top view for illustrating the second embodiment of the present invention.
Fig. 6 is the top view for illustrating the third embodiment of the present invention.
The explanation of reference
1：Substrate 20：Chamber unit
30：Raw material feed mechanism 31：Raw material supply mouth
32：Helicla flute 40：Gas is detained chamber
41：Second gas outlet 42：Laser transmissive window
50：First exhaust portion 51,71：Groove
52、72：Slot hole 53,73：Through hole
70：Second exhaust portion 80：Air jet hole
Embodiment
Hereinafter, the preferred embodiments of the present invention are illustrated referring to the drawings.During this, in order to clearly and be easy to
Bright, the thickness of multiple lines shown in figure or the size of structural element etc. can be greatly exaggerated to show.
Also, the term that multiple terms described later define as the function of considering in the present invention, this can be according to user
Member, the intention of operating personnel or convention and difference.Therefore, the definition for this multiple terms should be according in this specification
Hold to carry out.
Moreover, scope is claimed in the invention that following embodiment does not limit the present invention, only invention of the invention
The exemplary item of structural element proposed in claimed scope, the technology for being included in the specification full text of the present invention are thought
Think and be included in the implementation in the structural element of the claimed scope of invention as the commutable structural element of equivalent technical solutions
Scope is claimed in the invention that example can be included in the present invention.
Fig. 3 is the sectional view for illustrating the first embodiment of the present invention.Fig. 4 is for illustrating that the first of the present invention implements
The top view of example.Fig. 5 is the top view for illustrating the second embodiment of the present invention.Fig. 6 is for illustrating the 3rd of the present invention the
The top view of embodiment.
First, before explaining the present invention, for part same as the prior art, identical reference is marked, and
The repetitive description thereof will be omitted.
Reference picture 3 is provided with chamber unit 20 on the top of aforesaid substrate 1, above-mentioned chamber unit 20 includes to Fig. 4：It is former
Feed mechanism 30 is expected, for base feed gas；Gas is detained chamber 40, for making what is supplied to above-mentioned raw materials feed mechanism 30
Unstrpped gas is detained；First exhaust portion 50, the unstrpped gas be detained chamber 40 for discharging above-mentioned gas and discharged；And second row
Gas portion 70, for discharging gas and unstrpped gas.
Let out using above-mentioned first exhaust portion 50 and second exhaust portion 60 to prevent from being formed gas caused by film to surrounding
Leakage.
Also, it is detained the periphery of chamber 40 in above-mentioned gas formed with more than one to be used for the surface of aforesaid substrate 1
Side spray penetrates the air jet hole 80 of air, and above-mentioned air jet hole 80 is optionally arranged at above-mentioned gas and is detained chamber 40
Periphery.
The air from the injection of above-mentioned air jet hole 80 can be utilized to minimize the generation in the particle that disperses on film periphery,
And the generation of growth type foreign matter can be suppressed.
Also, in the bottom surface of chamber unit 20 formed with circular groove, in order to pass through the bottom of above-mentioned chamber unit 20
Gap (gap) discharge or discharge above-mentioned gas between face and aforesaid substrate 1.
Therefore, above-mentioned first exhaust portion 60 is formed from the circular groove 51 and and shape of the bottom surface of above-mentioned chamber unit 20
Formed into the through hole 53 that is connected of slot hole 52 in above-mentioned groove 51.
Also, above-mentioned second exhaust portion 70 is formed from the groove 71 of the bottom surface of above-mentioned chamber unit 20, with being formed at
The slot hole 72 for stating groove 71 is connected and formed to discharge the through hole 73 of above-mentioned gas and unstrpped gas.
The top for being detained chamber 40 in above-mentioned gas is provided with laser transmissive window 42 so that above-mentioned laser transmission, formed with
It is detained chamber 40 with above-mentioned gas to be connected to supply the second gas outlet 41 of the gas of purging (purge).
Preferably as above-mentioned purge gas or the gas of air curtain, N is used2, the inert gas such as Ar, He, it is excellent
Selection of land, the unstrpped gas of film is formed as being reacted with laser, used Cr (Co)6、W(CO)6Deng.
In the direction of the supply with being detained the unstrpped gas that chamber 40 supplies from above-mentioned raw materials feed mechanism 30 to above-mentioned gas
On identical parallel lines 2, above-mentioned first exhaust portion 50 is formed to (180 °) in front of the direction of the supply of above-mentioned unstrpped gas.
Also, at the rear in the direction of supply above-mentioned raw materials gas, on the basis of above-mentioned parallel lines 2, both sides are symmetrically divided
Not formed with second exhaust portion 70.
Therefore, the front direction for chamber 40 being detained to gas maintains uniform pressure, so that in above-mentioned gas residual chamber room,
The flowing (gas flow) of above-mentioned raw materials gas becomes uniform.
Thus, the amount of the unstrpped gas flowed to the position of laser is improved, so as to inducible high reaction, thus
In the thin line width of laser, film also can be swimmingly formed, using than the conventional lesser amount of unstrpped gas of film forming device
Also identical result can be obtained, so as to reduce raw material, and then reduces production cost.
Reference picture 3 and Fig. 5, above-mentioned raw materials feed mechanism 30 formed with above-mentioned gas be detained chamber 40 be connected to supply
Raw material supply mouth 31 to unstrpped gas.
Above-mentioned raw materials supply mouth 31 is obliquely detained chamber 40 with above-mentioned gas and is connected, and makes unstrpped gas along above-mentioned gas
Body be detained chamber 40 inner peripheral surface supplied with the apperance (swirling) turned round and round, so as to increase the flowing of unstrpped gas away from
From thus, unstrpped gas is elongated exposed to the time of laser, to improve reactivity, so as to effectively be formed in aforesaid substrate 1
Film.
Also, reference picture 3 and Fig. 6, above-mentioned raw materials supply mouth 31 inner peripheral surface formed with spiral helicla flute 32, make
The cross sectional shape of the above-mentioned raw materials gas of supply is rotated, and to increase the flow distance of unstrpped gas, thus, unstrpped gas is sudden and violent
It is elongated to be exposed at the time of laser, to improve reactivity, so as to effectively form film in aforesaid substrate 1.
More than, the present invention is described in detail by specific embodiment, but this is used to illustrate the present invention, and the present invention is simultaneously
This is not limited to, in the technological thought of the present invention, its change can be carried out by general technical staff of the technical field of the invention
Shape or change, this is obvious.
The simple deformation or even change of the present invention belongs to scope of the invention, and specific protection domain of the invention can basis
Appended patented invention is claimed scope and becomes clear and definite.
Claims (5)
1. a kind of film forming device, to the surface of substrate on supply chemical vapor deposition unstrpped gas, it is above-mentioned to what is supplied
Chemical vapor deposition unstrpped gas irradiates laser, utilizes the above-mentioned chemical vapor deposition unstripped gas to be reacted with above-mentioned laser
Body, film is formed in aforesaid substrate, it is characterised in that
It is provided with chamber unit on the top of aforesaid substrate, above-mentioned chamber unit is detained chamber, the by raw material feed mechanism, gas
One exhaust portion and second exhaust portion are formed, above-mentioned raw materials feed mechanism base feed gas, and above-mentioned gas are detained chamber and made upwards
The unstrpped gas for stating the supply of raw material feed mechanism is detained, and above-mentioned first exhaust portion discharge above-mentioned gas are detained the raw material of chamber discharge
Gas, above-mentioned second exhaust portion discharge gas and unstrpped gas,
Above-mentioned film forming device, which is formed, to be detained the front direction of chamber to above-mentioned gas and forms the mechanism of uniform pressure, so as to
The inside that above-mentioned gas are detained chamber makes the flowing of above-mentioned chemical vapor deposition unstrpped gas become uniform.
2. film forming device according to claim 1, it is characterised in that be detained the front direction of chamber to above-mentioned gas
Formed in the mechanism of uniform pressure, in the unstrpped gas with being detained chamber supply from above-mentioned raw materials feed mechanism to above-mentioned gas
Direction of the supply identical parallel lines on, to above-mentioned unstrpped gas the direction of the supply in front of (180 °) formed with above-mentioned first exhaust
Portion, at the rear in the direction of supply above-mentioned raw materials gas, on the basis of above-mentioned parallel lines, both sides are symmetrically respectively formed with second
Exhaust portion.
3. film forming device according to claim 1, it is characterised in that in above-mentioned chamber unit, in above-mentioned gas
It is detained the periphery of chamber formed with more than one air jet hole, surface side spray of the above-mentioned air jet hole to aforesaid substrate
Penetrate air.
4. film forming device according to claim 1, it is characterised in that above-mentioned raw materials feed mechanism formed with it is above-mentioned
Gas delay chamber, which is connected, carrys out the raw material supply mouth of base feed gas, and above-mentioned raw materials supply mouth is obliquely stagnant with above-mentioned gas
Stay chamber to be connected, unstrpped gas is detained the inner peripheral surface of chamber along above-mentioned gas and supplied with the apperance turned round and round.
5. film forming device according to claim 1, it is characterised in that above-mentioned raw materials feed mechanism formed with it is above-mentioned
Gas is detained chamber and is connected and carrys out the raw material supply mouth of base feed gas, above-mentioned raw materials supply mouth inner peripheral surface formed with spiral shell
The helicla flute of shape is revolved, is rotated the cross sectional shape of the above-mentioned raw materials gas of supply.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0074464 | 2016-06-15 | ||
| KR1020160074464A KR101819555B1 (en) | 2016-06-15 | 2016-06-15 | Thin film forming apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107523803A true CN107523803A (en) | 2017-12-29 |
| CN107523803B CN107523803B (en) | 2019-11-12 |
Family
ID=60748625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710179143.7A Active CN107523803B (en) | 2016-06-15 | 2017-03-23 | Film forming device |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101819555B1 (en) |
| CN (1) | CN107523803B (en) |
Cited By (2)
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| CN110579477A (en) * | 2018-06-11 | 2019-12-17 | Hb技术有限公司 | Defect detection device and method of automatic repair system |
| TWI689620B (en) * | 2018-09-17 | 2020-04-01 | 韓商Ｃｏｗｉｎｄｓｔ股份有限公司 | Method of forming fine pattern using laser chemical vapor deposition |
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| KR20090028345A (en) * | 2007-09-14 | 2009-03-18 | 주식회사 코윈디에스티 | Method for thin metal film depositing gas spray and thin metal film depositing gas spray apparatus |
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| CN101156230A (en) * | 2005-04-04 | 2008-04-02 | 东京毅力科创株式会社 | Film-forming apparatus, film-forming method and recording medium |
| KR20090028345A (en) * | 2007-09-14 | 2009-03-18 | 주식회사 코윈디에스티 | Method for thin metal film depositing gas spray and thin metal film depositing gas spray apparatus |
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| CN110579477A (en) * | 2018-06-11 | 2019-12-17 | Hb技术有限公司 | Defect detection device and method of automatic repair system |
| CN110579477B (en) * | 2018-06-11 | 2022-06-07 | Hb技术有限公司 | Defect detection device and method of automatic repair system |
| TWI689620B (en) * | 2018-09-17 | 2020-04-01 | 韓商Ｃｏｗｉｎｄｓｔ股份有限公司 | Method of forming fine pattern using laser chemical vapor deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107523803B (en) | 2019-11-12 |
| KR20170141439A (en) | 2017-12-26 |
| KR101819555B1 (en) | 2018-01-17 |
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Inventor after: Cui Rongxie Inventor after: Xu Dongxiu Inventor before: Guo Dongzhou Inventor before: Shen Donggao |