KR20050092982A - Apparatus of laser chemical vapour deposition for forming thin film - Google Patents

Abstract

The laser chemical vapor deposition apparatus of the present invention improves the structure of the deposition gas chamber to supply gas of quantitative and positive pressure to the process space without leakage to the outside at atmospheric pressure, the gas shield for performing a predetermined process on the substrate; A deposition gas chamber formed inside the gas shield and including an outlet portion designed to have a smaller height than an upper portion thereof; A gas inlet and a gas outlet for supplying and discharging gas to the deposition gas chamber; It includes an air inlet for supplying the purified air to prevent the outflow of gas to the outside.

Description

Laser chemical vapor deposition apparatus for depositing high quality thin film {APPARATUS OF LASER CHEMICAL VAPOUR DEPOSITION FOR FORMING THIN FILM}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition apparatus for a liquid crystal display device, and more particularly, to a laser chemical vapor deposition (CVD) apparatus for thin film deposition and repair of metal lines.

In today's information society, display is more important as a visual information transmission medium, and in order to gain a major position in the future, it is necessary to satisfy requirements such as low power consumption, thinness, light weight, and high definition. Liquid Crystal Display (LCD), the flagship product of Flat Panel Display (FPD), has not only the ability to satisfy these conditions of the display but also mass production. It has been established as a core parts industry that can gradually replace the existing cathode ray tube (CRT).

In general, a liquid crystal display device displays a desired image by individually supplying data signals according to image information to liquid crystal cells arranged in a matrix form to adjust a light transmittance of the liquid crystal cells. to be.

To this end, the liquid crystal display is largely composed of an array substrate including a driving circuit unit, a color filter substrate, and a liquid crystal layer formed between the array substrate and the color filter substrate.

In this case, the array substrate includes a plurality of gate lines and data lines arranged vertically and horizontally on the substrate to define a plurality of pixel regions. In addition, a thin film transistor (TFT), which is a switching element, is formed in an intersection region of the gate line and the data line, and a pixel electrode is formed in each pixel region.

In the image display area of the color filter substrate, a color filter for implementing color and a common electrode which is an opposite electrode of the pixel electrode formed on the array substrate are formed.

The array substrate and the color filter substrate configured as described above are provided with a cell gap so as to be uniformly spaced apart by a spacer, and are bonded to each other by a seal pattern formed on the outer side of the image display area to form a unit liquid crystal display. It forms a panel.

On the other hand, the liquid crystal display device configured as described above requires a thin film deposition process, such as a plurality of insulating layers, silicon layers and metal layers, in order to form a thin film transistor, sputtering in the case of a metal film and a transparent electrode As a method, silicon and an insulating film have mainly used a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.

Recently, a laser chemical vapor deposition method using a laser is used to obtain a high quality thin film. For example, laser chemical vapor deposition equipment used in a repair process of a metal line using the same is disclosed in US patent applications 4,801,352 and 6,336,975. This is explained as follows.

1 is a cross-sectional view schematically showing the structure of a general laser chemical vapor deposition equipment.

As shown in the figure, a gas chamber 15 for depositing a thin film is installed on a glass substrate 10 on which a pattern is formed, and at this time, the lower surface of the gas chamber 15 and the glass substrate ( A small gap is maintained between the upper surfaces of 10).

In this case, the gas chamber 15 includes a deposition gas chamber 12 having a deposition gas, a gas inlet 14 which is a passage for supplying gas to the deposition gas chamber, and a gas discharge part 13 which discharges the gas. Doing.

The gas discharge part 13 serves to discharge the gas decomposed from the deposition gas chamber 12 to the outside through a ring-shaped groove 13A formed around the deposition gas chamber 12.

In this case, the flow of gas flowing into the deposition gas chamber 12 and then discharged to the outside is illustrated by an arrow.

Meanwhile, the glass substrate 10 is supported and fixed by a holder 30, and the upper surface of the holder 30 on which the glass substrate 10 is not placed is covered with a cover 20. .

In addition, the lens 50 is installed on the upper portion of the laser window 17 of the gas chamber 15 to collect the laser beam irradiated, and the measurement unit 40 installed under the holder 30 is It serves to inspect the quality of the thin film formed by the laser chemical vapor deposition.

At this time, supplying the gas of the quantitative and positive pressure to the process region at atmospheric pressure without external leakage has become a major factor in the quality and deposition rate of the deposited thin film, but in the above-described laser chemical vapor deposition apparatus, the gas chamber is basically As a result, the quality of the deposited thin film was deteriorated due to the external leakage of the gas or the weak design of the static pressure control.

In addition, by supplying the gas at atmospheric pressure as described above, it is difficult to control the concentration and pressure of the gas, thereby affecting the quality degradation and deposition rate of the thin film, thereby making it difficult to improve the process time.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a laser chemical vapor deposition apparatus capable of supplying a gas of quantitative and positive pressure to a process space without external leakage at atmospheric pressure.

Other objects and features of the present invention will be described in the configuration and claims of the invention described below.

In order to achieve the above object, the laser chemical vapor deposition apparatus of the present invention is a gas shield for performing a predetermined process on the substrate, the deposition gas chamber formed in the gas shield, the outlet gas designed to have a smaller height than the upper, And a gas inlet and a gas outlet for supplying and discharging gas to the deposition gas chamber, and an air inlet for supplying purified air to prevent outflow of gas to the outside.

In this case, the outlet portion H1 may be configured to have a relationship of H1 = H2 / 5 to H2 / 10 with respect to the upper height H2 of the deposition gas chamber.

In addition, the gas shield may further include a first groove formed on the lower surface of the gas shield to inject purified air into the process region of the substrate through an air inlet.

In this case, the first groove of the air inlet may be located outside the second groove formed in the outlet.

On the other hand, the deposition gas chamber may be configured such that the upper and lower sizes and the left and right sizes are the same in order to maintain a stable pressure therein.

Hereinafter, the laser chemical vapor deposition apparatus of the present invention configured as described above will be described in detail by examples.

2 is a cross-sectional view schematically showing the structure of a laser chemical vapor deposition apparatus according to an embodiment of the present invention.

As shown in the figure, a gas shield 115 for a process such as thin film deposition or repair is formed on a glass substrate (eg, an array substrate or a color filter substrate) 110 on which a predetermined pattern is formed. It is installed.

In this case, the gas shield 115 includes a deposition gas chamber 112 holding a deposition gas such as an organic metal mixed gas, a gas inlet 114, which is a passage for supplying gas to the deposition gas chamber, and a gas discharger that discharges the gas. The part 113 is provided.

Here, the deposition gas chamber 112 refers to a space in the form of a chamber in which a gas is supplied to allow a process to be performed, and the gas discharge part 113 is formed in a ring-shaped first groove formed around the deposition gas chamber 112. Through the 113A) serves to discharge the gas decomposed from the deposition gas chamber 112 to the outside.

At this time, the gas shield 115 of the present embodiment is to improve the structure of the deposition gas chamber 112 in order to improve the ability of the flow rate and pressure control of the gas and to the outermost portion of the gas shield 115 to prevent the outflow of gas. An air inlet 116 was placed.

For reference, a gas flow flowing into the deposition gas chamber 112 and then discharged to the outside is illustrated by an arrow.

On the other hand, the laser chemical vapor deposition apparatus configured as described above is deposited on the predetermined substrate 110 by injecting a deposition gas, such as Mo (CO) ₆ , W (CO) ₆ or WF ₆ into the deposition gas chamber 112. It is possible to form a conductive metal material.

At this time, the structure of the deposition gas chamber 112 is removed from the existing simple form to minimize the outflow of the gas to the outside and narrowly designed the outlet and the flow rate and pressure of the gas flowing out to the outside according to the pressure of the supplied gas It can be made into a structure that can control, which will be described in detail as follows.

FIG. 3A is an exemplary view showing an enlarged portion A of the laser chemical vapor deposition apparatus illustrated in FIG. 2, and FIG. 3B is an enlarged view illustrating a portion B of the laser chemical vapor deposition apparatus.

First, FIG. 3A is an enlarged view of the deposition gas chamber. As shown in the drawing, the height H2 of the outlet portion 112A of the deposition gas chamber 112 may be set in order to suppress the outflow of gas to the outside. It is designed to be smaller than the upper height H1 of 112. In this case, as illustrated by the arrow, the gas flow may be swirled inside the deposition gas chamber 112 so that the gas outflow to the outside may be suppressed.

That is, when the height H2 of the gas outlet 112A is set to about 1/5 to 1/10 of the upper height H1 in order to suppress the flow and discharge of the gas, the gas flow is not smooth and vortex occurs. Done.

As such, the structure of the deposition gas chamber is not well vented and is swirled in the gas chamber to maintain a constant pressure and flow rate.

In addition, an angle alpha between the upper surface of the deposition gas chamber 112 that meets the gas outlet 112A and the outlet 112A is designed to be 40 to 50 degrees so that the bottleneck occurs at the outlet 112A. can do.

In addition, if the ratio of the deposition gas chamber 112 is designed such that the size of the upper and lower sides and the left and right sizes are the same, the flow of the fluid is optimized to maintain a stable pressure.

On the other hand, the outside of the gas shield can be provided to prevent the outflow of the gas discharged by supplying a clean dry air (CDA) with a groove in order to prevent the outflow of the gas in the air, which is shown in Figure 3b It is shown in detail.

That is, as shown in FIG. 3B, the air inlet 116 is provided with the second groove 116A formed at the outermost portion of the gas shield 115.

At this time, the second groove 116A is located at the edge of the process region to receive purified air from the air inlet 116 into the process region to prevent the outflow of the exhaust gas to stabilize the deposition and contamination Provides the effect of prevention.

In particular, since chemical vapor deposition uses a lot of corrosive and toxic gases, much attention must be paid to exhaust gas treatment.

On the other hand, when the gas shield is configured as described above, the concentration and pressure of the gas can be adjusted in various ways, so that the deposition rate can be increased by maintaining the process conditions at optimum conditions, that is, maintaining the process area at high pressure and concentration. High quality thin film can be obtained.

Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be defined by the described embodiments, but should be defined by the claims and their equivalents.

As described above, the laser chemical vapor deposition apparatus according to the present invention can variously control the concentration and pressure of the gas, thereby providing an effect of improving the deposition rate by maintaining the process region at a high pressure and a dark concentration.

In addition, as described above, the present invention can uniformly control the concentration and pressure of the gas to obtain a thin film having improved quality.

1 is a cross-sectional view schematically showing the structure of a general laser chemical vapor deposition apparatus.

Figure 2 is a cross-sectional view schematically showing the structure of a laser chemical vapor deposition apparatus according to an embodiment of the present invention.

3A is an exemplary view showing an enlarged portion A of the laser chemical vapor deposition apparatus shown in FIG.

3B is an exemplary view showing an enlarged portion B of the laser chemical vapor deposition apparatus shown in FIG. 2.

** Explanation of symbols for main parts of drawings **

110 array substrate 112 deposition gas chamber

113: gas outlet 113A: first groove

114 gas inlet 115 gas shield

116: air inlet 116A: second groove

Claims (6)

A gas shield for performing a predetermined process on the substrate; A deposition gas chamber formed inside the gas shield and including an outlet portion designed to have a smaller height than an upper portion thereof; A gas inlet and a gas outlet for supplying and discharging gas to the deposition gas chamber; Laser chemical vapor deposition apparatus comprising an air inlet for supplying purified air to prevent the outflow of gas to the outside. 2. The laser chemical vapor deposition apparatus according to claim 1, wherein the outlet portion is configured such that the height H1 has a relationship of H1 = H2 / 5 to H2 / 10 with respect to the upper height H2 of the deposition gas chamber. . The apparatus of claim 1, wherein an upper surface of the deposition gas chamber is configured to have an angle of 40 to 50 degrees with the outlet portion. The apparatus of claim 1, further comprising a first groove formed in the lower surface of the gas shield and injecting purified air into the process region of the substrate through an air inlet. The apparatus of claim 4, wherein the first groove of the air inlet is located outside the second groove formed in the outlet. The laser chemical vapor deposition apparatus according to claim 1, wherein the deposition gas chamber is configured such that the upper and lower sizes and the left and right sizes are the same in order to maintain a stable pressure therein.