TWM601899U - Gas nozzle of semiconductor processing chamber - Google Patents

Abstract

A gas shower head for a semiconductor processing chamber includes a first cylinder with a first light-transmitting portion, a first outer peripheral surface, a first end surface, and a first flow channel. The first cylinder forms a second flow channel on the first outer peripheral surface , Each second flow channel is connected to the first flow channel, the first cylinder has a third flow channel on the first end surface, each of the second flow channel and the third flow channel is located in the first light transmitting part; and the second cylinder has a first Two light-transmitting parts, a second outer peripheral surface, a fourth flow channel, and a fifth flow channel. The second cylinder is connected to the first cylinder and is located in the first flow channel. Each fourth flow channel is connected to the third flow channel and the fifth flow channel. The channel communicates with each fourth flow channel, and each fourth flow channel is located in the second light transmitting part. Through the first light-transmitting part and the second light-transmitting part, the conditions of the second, third, and fourth flow channels can be observed to determine whether it is applicable, or even replace the gas nozzle in time.

Description

Gas shower head for semiconductor process chamber

This creation is related to the nozzle, especially a gas nozzle in the semiconductor process chamber.

As the semiconductor manufacturing process has become more and more sophisticated, the required process conditions have also become more stringent. Many of the methods involved in the manufacturing process of semiconductor structures are to blow different types of gases into the semiconductor processing chamber to generate reactions to make semiconductor structures. The purity requirements of the gases used need to be quite high. The purpose of improving the gas purity is to reduce impurities that affect the manufacturing process, and to increase the controllability of the entire manufacturing process, so as to achieve the purpose of stably manufacturing fine semiconductor structures.

However, in addition to the need to increase the purity of the gas itself, the path environment that the gas travels during the blowing process also needs to be controlled to prevent impurities from entering the gas, so that the purity of the gas in the semiconductor processing chamber can meet the requirements. Regarding the environmental control of the gas blowing path, the cleanliness control of the gas injector installed in the semiconductor processing chamber also plays a very important role. The reason is that different types of gases need to be rectified by the nozzle and blown into the semiconductor process chamber to make the flow field in the semiconductor process chamber uniform and controllable. Therefore, a gas nozzle must be provided. However, after the gas chemical reaction, the flow channel inside the nozzle will be corroded or deposited impurities. As a result, the nozzle will be polluted, which needs to be prevented.

In addition, during the processing of the gas nozzle, there may also be processing defects such as broken runners, and gas may flow through the processing defects and cause the nozzle to pollute the process.

The main purpose of this creation is to provide a gas nozzle for a semiconductor processing chamber, which allows users to observe the flow channel to determine whether it is suitable or even replace the gas nozzle in time to reduce nozzle contamination.

The reason is that a gas shower head for a semiconductor process chamber provided according to this creation includes: a first cylinder with a first light-transmitting portion, a first outer peripheral surface, a first end surface, and a first flow channel The first cylinder forms at least one second flow channel on the first outer peripheral surface, the second flow channel communicates with the first flow channel, the first cylinder has at least one third flow channel on the first end surface, the The second flow channel and the third flow channel are located in the first light-transmitting portion; and a second cylinder having a second light-transmitting portion, a second outer peripheral surface, at least a fourth flow channel and a fifth flow The second cylinder is connected to the first cylinder and is located in the first flow channel, the fourth flow channel is respectively connected to the third flow channel, the fifth flow channel is connected to the fourth flow channel, and the fourth flow channel Located in the second light transmitting part.

In this way, the user can observe the conditions of the second, third and fourth runners through the first light-transmitting part and the second light-transmitting part, so as to judge whether it is suitable, or even replace the gas nozzle in time to reduce the number of nozzles. Contamination occurs.

In addition, the first column and the second column can also be integrally formed. It can reduce the chance of gas circulating in the first flow channel and the fifth flow channel contaminating each other.

It is also possible to allow the first column to protrude a flange portion on the first outer peripheral surface, and the flange portion forms a groove. It is convenient for users to set up the gas spray head and set up the sealing element.

The first column 11 further has a third light-transmitting portion 113a on the first end surface 113; the third flow channel 116 is located in the third light-transmitting portion 113a. In this way, the user can observe the condition of the third flow channel 116 through the third light transmitting portion 113a.

In addition, this invention also provides a gas shower head for a semiconductor processing chamber, which includes: a first cylinder with a first light-transmitting portion, a first outer peripheral surface, a first end surface, and a first flow channel. A pillar forms at least one second flow channel on the first outer peripheral surface or the first end surface, the second flow channel communicates with the first flow channel, and the second flow channel is located at the first light-transmitting portion.

In this way, the user can observe the condition of the second flow channel through the first light-transmitting part, thereby judging whether it is applicable, or even replacing the gas nozzle in time to reduce the pollution of the nozzle.

In order to explain in detail the technical features of this creation, the following examples are given in conjunction with the schematic descriptions, among which:

As shown in FIGS. 1-4, a gas shower head 10 for a semiconductor process chamber provided by the first embodiment of the present creation includes a first cylinder 11 and a second cylinder 12. It should be noted that, in this embodiment, due to the first column 11 and the second column 12.

It should be noted that the user can choose whether the first cylinder 11 or the second cylinder 12 is made of a light-transmitting material, such as a single crystal Yttrium Aluminum Garnet (YAG) material, which can produce a transparent material. The effect of light. In this embodiment, the first column 11 and the second column 12 are made of the transparent material as an example.

In this embodiment, the light-transmitting material under the condition that the light travel path is 1 mm (1mm path length), the light transmittance (Internal Transmission) of light with a wavelength of 200 nm is 50%~60%; The light transmittance of 5000nm (Internal Transmission) is >90%; the light transmittance of 7500nm (Internal Transmission) is 3%~8%.

It should also be noted that the light-transmitting material can be directly used to make the entire gas shower head 10 without any surface grinding; part of the surface of the gas shower head 10 can also be ground to make it easier to observe.

The first cylinder 11 has a first light-transmitting portion 111, a first outer peripheral surface 112, a first end surface 113 and a first flow channel 114. The first light-transmitting portion 111 is formed on any part of the first cylinder 11, which means that the first cylinder 11 must be able to transmit light in this section, and other parts do not specifically specify whether to provide Light penetrates. Figures 2 and 4 show the first light-transmitting parts 111 of different lengths. According to the description in the previous paragraph, it can be seen that the surface of the first light-transmitting portion 111 is polished so that the light is easier to pass through and easier to observe.

The first cylinder 11 forms at least one second flow channel 115 on the first outer peripheral surface 112, the second flow channel 115 communicates with the first flow channel 114, and the second flow channel 115 is for supplying gas from the first flow channel 114 After flowing in, it flows out from the second flow channel 115 and enters the semiconductor processing chamber.

The first column 11 has at least one third flow channel 116 on the first end surface 113, and the second flow channel 115 and the third flow channel 116 are located in the first light transmitting portion 111. In this way, the user can observe the conditions in the second flow channel 115 and the third flow channel 116.

The second cylinder 12 has a second light-transmitting portion 121, a second outer peripheral surface 122, at least one fourth flow channel 123 and a fifth flow channel 124.

The second column 12 is connected to the first column 11 and is located in the first flow channel 114.

The fourth flow passage 123 is respectively connected to the third flow passage 116, the fifth flow passage 124 is connected to the fourth flow passage 123, and the fourth flow passage 123 is located in the second light transmitting portion 121. In this way, the gas in the fifth flow channel 124 flows into the fourth flow channel 123 and then enters the third flow channel 116 and flows out of the third flow channel 116.

It is worth mentioning that in this embodiment, the first column 11 and the second column 12 are combined in an integral manner. In this way, there is no seam between the first cylinder 11 and the second cylinder 12, so the chance of the gas circulating in the first flow channel 114 and the fifth flow channel 124 from being contaminated with each other can be reduced.

With the gas nozzle 10 provided in this embodiment, the user can observe the conditions of the second flow channel 115, the third flow channel 116 and the fourth flow channel 123 through the first light-transmitting portion 111 and the second light-transmitting portion 121. If there are processing defects, corrosion or deposited impurities in the second flow channel 115, the third flow channel 116 and the fourth flow channel 123, it can be judged whether it is applicable, or even replace the gas nozzle in time to reduce the pollution of the nozzle.

It is also worth mentioning that a flange portion 117 can be further protruded from the first cylindrical body 11 on the first outer peripheral surface 112, and the flange portion 117 forms a groove 117a. It is convenient for users to set up the gas spray head and set up the sealing element.

In addition, please refer to FIGS. 5 and 6, a gas shower head 20 for a semiconductor process chamber provided by the second embodiment of the present creation. The difference from the first embodiment is that the first pillar 11 further has a third light-transmitting portion 113 a on the first end surface 113. Wherein, the third flow channel 116 is located in the third light transmitting portion 113a. In this way, the user can observe the situation in the third flow channel 116. The third light-transmitting portion 113a means that the first cylinder 11 must be capable of transmitting light at this section, and other parts do not specifically specify whether light can penetrate. With the gas nozzle 10 provided in this embodiment, the user can observe the condition of the third flow channel 116 through the third light transmitting portion 113a. If there are processing defects, corrosion or deposited impurities in the third flow channel 116, it can be judged whether it is applicable, or even the gas nozzles should be replaced in time to reduce the pollution of the nozzles in the process.

5 and 6 show the third light-transmitting portion 113a of different sizes.

In addition, please refer to FIGS. 7-10, a gas shower head 20 for a semiconductor processing chamber provided by the third embodiment of the present creation. This is to simplify the first embodiment to include a first column 21.

In this embodiment, the first cylinder 21 is made of a light-transmitting material as an example. The light-transmitting material can be used to make the entire gas shower head 20 without any surface grinding; it is also possible to grind part of the surface of the gas shower head 20 to make It is easier to observe.

The first column 21 has a first transparent portion 211, a first outer peripheral surface 212, a first end surface 213 and a first flow channel 214.

The first light-transmitting portion 211 is formed on any part of the first cylinder 21, which means that the first cylinder 21 must be able to transmit light in this section, and other parts do not specifically specify whether to provide light penetrate. Figures 7 and 9 show the first light-transmitting portion 211 at different positions. It can be seen that the first light-transmitting portion 211 is surface-polished so that the light can easily pass through and be easier to observe.

The first cylinder 21 forms at least one second flow channel 215 on the first outer peripheral surface 212 (FIG. 7) or the first end surface 213 (FIG. 9), the second flow channel 215 is connected to the first flow channel 214, the The second flow channel 215 is for the gas to flow in from the first flow channel 214 and then flow out from the second flow channel 215 to enter the semiconductor processing chamber.

With the gas nozzle 20 provided in this embodiment, the user can observe the second flow channel 215 through the first transparent portion 211. If there are processing defects, corrosion or deposited impurities in the second flow channel 215, it is judged whether it is applicable, or even the gas nozzle is replaced in time to reduce the pollution of the nozzle.

10, 20: gas nozzle 11, 21: the first cylinder 111, 211: first light transmission part 112, 212: the first outer peripheral surface 113, 213: first end face 113a: The third light transmission part 114, 214: first runner 115, 215: second runner 116: third runner 117: Flange 117a: Slot 12: second cylinder 121: second light transmission part 121: second outer peripheral surface 123: fourth runner 124: Fifth runner

Figure 1 is a perspective view of the first embodiment of this creation, showing a gas spray head. Figure 2 is a side view of the first embodiment of this creation, showing a gas shower head. Figure 3 is a cross-sectional view of the first embodiment of this creation, the display body spray head. Fig. 4 is a side view of the first embodiment of the creation, showing the first light-transmitting part and the second light-transmitting part that are different from those in Fig. 2. Figure 5 is a side view of the second embodiment of this creation, showing the third light-transmitting part. Fig. 6 is a side view of the second embodiment of this creation, showing the third light-transmitting part. Figure 7 is a three-dimensional view of the third embodiment of this creation, showing a gas spray head. Figure 8 is a cross-sectional view of the third embodiment of this creation, showing a gas shower head. Figure 9 is a three-dimensional view of the third embodiment of this creation, showing a gas spray head. Figure 10 is a cross-sectional view of the third embodiment of this creation, showing a gas shower head.

10: Gas nozzle

11: The first cylinder

111: The first light transmission part

112: first outer peripheral surface

113: first end face

115: second runner

116: third runner

117: Flange

117a: Slot

121: second light transmission part

Claims (7)

A gas shower head for a semiconductor processing chamber, including: A first cylinder has a first light-transmitting portion, a first outer peripheral surface, a first end surface, and a first flow channel. The first cylinder forms at least one second flow channel on the first outer peripheral surface. The second flow channel communicates with the first flow channel, the first cylinder has at least one third flow channel on the first end surface, and the second flow channel and the third flow channel are located in the first light-transmitting part; and A second cylinder has a second light-transmitting portion, a second outer peripheral surface, at least one fourth flow channel and a fifth flow channel, the second cylinder is connected to the first cylinder and is located in the first flow channel The fourth flow channel is respectively connected to the third flow channel, the fifth flow channel is connected to the fourth flow channel, and the fourth flow channel is located in the second light-transmitting part. The gas shower head of the semiconductor process chamber according to claim 1, wherein: the first column or the second column system is made of a light-transmitting material, and the light-transmitting material is 1 mm (1mm path length) Under the conditions, the light transmittance (Internal Transmission) for the wavelength of 200nm is 50%~60%; the light transmittance (Internal Transmission) for the wavelength of 5000nm is >90%; for the wavelength of 7500nm The light transmittance (Internal Transmission) is 3%~8%. According to claim 1, the gas shower head of a semiconductor processing chamber, wherein: the first cylinder and the second cylinder are integrally formed. According to claim 1, the gas shower head of the semiconductor process chamber, wherein: the first column further protrudes a flange portion on the first outer peripheral surface, and the flange portion forms a groove. According to claim 1, the gas shower head of the semiconductor processing chamber, wherein: the first column further has a third light-transmitting portion on the first end surface, and the third flow channel is located in the third light-transmitting portion. A gas shower head for a semiconductor processing chamber, including: A first column has a first light-transmitting portion, a first outer peripheral surface, a first end surface, and a first flow channel. The first column forms at least one first outer surface or the first end surface. Two flow channels, the second flow channel communicates with the first flow channel, and the second flow channel is located at the first light-transmitting part. The gas shower head of the semiconductor process chamber according to claim 6, wherein: the first column system is made of a light-transmitting material, and the light-transmitting material has a wavelength of 1 mm (1 mm path length). The light transmittance of 200nm (Internal Transmission) is 50%~60%; for the light transmittance of 5000nm (Internal Transmission) is >90%; for the light transmittance of 7500nm (Internal Transmission) Transmission) is 3%~8%.

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