KR20170137087A - Oled에 대한 층상 구조물 및 이러한 구조물의 제조 방법 - Google Patents

Oled에 대한 층상 구조물 및 이러한 구조물의 제조 방법 Download PDF

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Publication number
KR20170137087A
KR20170137087A KR1020177028680A KR20177028680A KR20170137087A KR 20170137087 A KR20170137087 A KR 20170137087A KR 1020177028680 A KR1020177028680 A KR 1020177028680A KR 20177028680 A KR20177028680 A KR 20177028680A KR 20170137087 A KR20170137087 A KR 20170137087A
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South Korea
Prior art keywords
layer
ald
oxide
iel
layered structure
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KR1020177028680A
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English (en)
Korean (ko)
Inventor
영성 이
모알 시몽 르
진우 한
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쌩-고벵 글래스 프랑스
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Publication of KR20170137087A publication Critical patent/KR20170137087A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H01L51/5268—
    • H01L21/0228—
    • H01L21/02631—
    • H01L51/5203—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
KR1020177028680A 2015-04-16 2016-03-23 Oled에 대한 층상 구조물 및 이러한 구조물의 제조 방법 Withdrawn KR20170137087A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP15163911.9 2015-04-16
EP15163911.9A EP3082172A1 (en) 2015-04-16 2015-04-16 Layered structure for an oled and a method for producing such a structure
PCT/EP2016/056448 WO2016165921A1 (en) 2015-04-16 2016-03-23 Layered structure for an oled and a method for producing such a structure

Publications (1)

Publication Number Publication Date
KR20170137087A true KR20170137087A (ko) 2017-12-12

Family

ID=52946413

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177028680A Withdrawn KR20170137087A (ko) 2015-04-16 2016-03-23 Oled에 대한 층상 구조물 및 이러한 구조물의 제조 방법

Country Status (8)

Country Link
US (1) US10367142B2 (OSRAM)
EP (1) EP3082172A1 (OSRAM)
JP (1) JP2018516431A (OSRAM)
KR (1) KR20170137087A (OSRAM)
CN (1) CN107431144B (OSRAM)
RU (1) RU2017134935A (OSRAM)
TW (1) TW201705581A (OSRAM)
WO (1) WO2016165921A1 (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2637715T3 (es) * 2014-12-01 2017-10-16 Saint-Gobain Glass France Sustrato OLED difusor transparente y método para producir dicho sustrato
CN110429161B (zh) * 2018-08-07 2021-04-20 广东聚华印刷显示技术有限公司 光学增透结构及底发射型电致发光器件和制备方法
CN109148694A (zh) * 2018-08-27 2019-01-04 领旺(上海)光伏科技有限公司 用于柔性钙钛矿太阳能电池的ito电极表面修饰方法
CN111384271B (zh) * 2018-12-29 2021-05-28 Tcl科技集团股份有限公司 量子点发光二极管及其制备方法
CN110747449B (zh) * 2019-11-19 2021-01-05 哈尔滨工业大学 一种用于电子屏幕的自洁疏水膜层的制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE655526A (fr) 1964-11-10 1965-05-10 Acec Poêle à accumulation
JP4363365B2 (ja) * 2004-07-20 2009-11-11 株式会社デンソー カラー有機elディスプレイおよびその製造方法
US7335980B2 (en) * 2004-11-04 2008-02-26 International Business Machines Corporation Hardmask for reliability of silicon based dielectrics
WO2009017035A1 (ja) 2007-07-27 2009-02-05 Asahi Glass Co., Ltd. 透光性基板、その製造方法、有機led素子及びその製造方法
FR2955575B1 (fr) 2010-01-22 2012-02-24 Saint Gobain Substrat verrier revetu d'une couche haut indice sous un revetement electrode et dispositif electroluminescent organique comportant un tel substrat.
FR2958795B1 (fr) * 2010-04-12 2012-06-15 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede d'encapsulation.
WO2012093467A1 (ja) * 2011-01-06 2012-07-12 シャープ株式会社 有機el表示装置およびその製造方法
KR101825053B1 (ko) * 2011-01-11 2018-02-05 삼성디스플레이 주식회사 유기발광표시장치의 제조방법
JP5684370B2 (ja) * 2011-03-29 2015-03-11 Necライティング株式会社 有機el発光装置、有機el発光装置の製造方法及び有機el照明装置
KR101715112B1 (ko) 2012-06-14 2017-03-10 쌩-고벵 글래스 프랑스 Oled 소자용 적층체, 그 제조방법 및 이를 구비한 oled 소자
FR2993707B1 (fr) 2012-07-17 2015-03-13 Saint Gobain Electrode supportee transparente pour oled
EP2712851B1 (en) 2012-09-28 2015-09-09 Saint-Gobain Glass France Method of producing a transparent diffusive oled substrate
JP6319095B2 (ja) * 2012-12-13 2018-05-09 コニカミノルタ株式会社 有機エレクトロルミネッセンスデバイスの製造方法
FR3020179B1 (fr) 2014-04-22 2017-10-06 Saint Gobain Electrode supportee transparente pour oled

Also Published As

Publication number Publication date
US10367142B2 (en) 2019-07-30
CN107431144A (zh) 2017-12-01
CN107431144B (zh) 2019-10-01
EP3082172A1 (en) 2016-10-19
US20180114910A1 (en) 2018-04-26
WO2016165921A1 (en) 2016-10-20
RU2017134935A3 (OSRAM) 2019-07-26
TW201705581A (zh) 2017-02-01
RU2017134935A (ru) 2019-04-05
JP2018516431A (ja) 2018-06-21

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