KR20170095218A - 반도체 압력 센서 - Google Patents

반도체 압력 센서 Download PDF

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Publication number
KR20170095218A
KR20170095218A KR1020177015587A KR20177015587A KR20170095218A KR 20170095218 A KR20170095218 A KR 20170095218A KR 1020177015587 A KR1020177015587 A KR 1020177015587A KR 20177015587 A KR20177015587 A KR 20177015587A KR 20170095218 A KR20170095218 A KR 20170095218A
Authority
KR
South Korea
Prior art keywords
resistor
membrane
output node
node
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020177015587A
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English (en)
Korean (ko)
Inventor
더 위엘 아폴로니어스 야코버스 밴
Original Assignee
멜렉시스 테크놀로지스 엔브이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/EP2014/077230 external-priority patent/WO2015086680A1/en
Application filed by 멜렉시스 테크놀로지스 엔브이 filed Critical 멜렉시스 테크놀로지스 엔브이
Publication of KR20170095218A publication Critical patent/KR20170095218A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/04—Means for compensating for effects of changes of temperature, i.e. other than electric compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/02—Arrangements for preventing, or for compensating for, effects of inclination or acceleration of the measuring device; Zero-setting means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
KR1020177015587A 2014-12-10 2015-12-08 반도체 압력 센서 Withdrawn KR20170095218A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
PCT/EP2014/077230 WO2015086680A1 (en) 2013-12-11 2014-12-10 Semiconductor pressure sensor
EPPCT/EP2014/077230 2014-12-10
EP15171268.4 2015-06-09
EP15171268.4A EP3032235B1 (en) 2014-12-10 2015-06-09 Semiconductor pressure sensor
PCT/EP2015/079010 WO2016091896A1 (en) 2014-12-10 2015-12-08 Semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
KR20170095218A true KR20170095218A (ko) 2017-08-22

Family

ID=53274454

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177015587A Withdrawn KR20170095218A (ko) 2014-12-10 2015-12-08 반도체 압력 센서

Country Status (5)

Country Link
EP (1) EP3032235B1 (cg-RX-API-DMAC10.html)
JP (1) JP6474492B2 (cg-RX-API-DMAC10.html)
KR (1) KR20170095218A (cg-RX-API-DMAC10.html)
CN (1) CN107003198B (cg-RX-API-DMAC10.html)
WO (1) WO2016091896A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11978680B2 (en) 2018-12-31 2024-05-07 Micron Technology, Inc. Method and apparatus for on-chip stress detection

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3358309B1 (en) 2017-02-06 2019-04-24 Melexis Technologies SA Method and circuit for biasing and readout of resistive sensor structure
US10704969B2 (en) * 2017-11-21 2020-07-07 The Boeing Company Stress sensor
US10983024B2 (en) * 2017-11-28 2021-04-20 Daeyang Electric Co., Ltd. Semiconductor pressure sensor
WO2020058091A1 (en) 2018-09-18 2020-03-26 Unilever Plc Method of chemical monitoring the fat removal from surfaces
CN109374158B (zh) * 2018-12-14 2024-08-13 华景传感科技（无锡）有限公司 一种压力传感器
CN113227954B (zh) 2018-12-20 2025-01-24 深圳纽迪瑞科技开发有限公司 压力感应装置、压力感应方法及电子终端
DE102021200720B4 (de) * 2021-01-27 2023-08-03 Infineon Technologies Ag Transistorbasierter stress-sensor und verfahren zum ermitteln einer gradienten-kompensierten mechanischen spannungskomponente
EP4492029A3 (en) * 2023-02-27 2025-03-12 Melexis Technologies NV Pressure sensor resistor configuration for stress compensation
EP4567393B1 (en) * 2023-12-04 2026-08-05 TE Connectivity Solutions GmbH Piezoresistive sensor element and piezoresistive pressure sensor with minimized long-term drift

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217780A (en) * 1975-07-04 1977-02-09 Hitachi Ltd Pressure convertor with semi-conductor elements
CA1186163A (en) 1982-01-04 1985-04-30 James B. Starr Semiconductor pressure transducer
JPS60128673A (ja) 1983-12-16 1985-07-09 Hitachi Ltd 半導体感圧装置
US4777826A (en) * 1985-06-20 1988-10-18 Rosemount Inc. Twin film strain gauge system
WO1996022515A1 (en) * 1995-01-19 1996-07-25 Honeywell Inc. Apparatus for detection of a diaphragm rupture in a pressure sensor
JPH08279621A (ja) * 1995-04-03 1996-10-22 Motorola Inc 平衡圧力センサとその方法
JP4568982B2 (ja) * 2000-10-06 2010-10-27 株式会社デンソー 物理量検出装置
JP3891037B2 (ja) * 2002-05-21 2007-03-07 株式会社デンソー 半導体圧力センサおよび半導体圧力センサ用の半導体ウェハ
JP3915715B2 (ja) * 2003-03-07 2007-05-16 株式会社デンソー 半導体圧力センサ
EP1640696B1 (de) * 2004-09-24 2010-06-09 Grundfos A/S Drucksensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11978680B2 (en) 2018-12-31 2024-05-07 Micron Technology, Inc. Method and apparatus for on-chip stress detection

Also Published As

Publication number Publication date
EP3032235A1 (en) 2016-06-15
JP2018504588A (ja) 2018-02-15
EP3032235B1 (en) 2017-09-20
CN107003198B (zh) 2020-06-26
JP6474492B2 (ja) 2019-02-27
CN107003198A (zh) 2017-08-01
WO2016091896A1 (en) 2016-06-16

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20170608

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination