KR20170086776A - Thick layer tin plating method by continuous repeat displacement method - Google Patents

Thick layer tin plating method by continuous repeat displacement method Download PDF

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Publication number
KR20170086776A
KR20170086776A KR1020160006198A KR20160006198A KR20170086776A KR 20170086776 A KR20170086776 A KR 20170086776A KR 1020160006198 A KR1020160006198 A KR 1020160006198A KR 20160006198 A KR20160006198 A KR 20160006198A KR 20170086776 A KR20170086776 A KR 20170086776A
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South Korea
Prior art keywords
copper
tin
layer
plating
uppermost
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KR1020160006198A
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Korean (ko)
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KR101817930B1 (en
Inventor
이남철
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주식회사 써피스텍
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Priority to KR1020160006198A priority Critical patent/KR101817930B1/en
Publication of KR20170086776A publication Critical patent/KR20170086776A/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/243—Reinforcing the conductive pattern characterised by selective plating, e.g. for finish plating of pads
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/073—Displacement plating, substitution plating or immersion plating, e.g. for finish plating

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The present invention relates to a method of manufacturing a semiconductor device, comprising: a first step of forming a copper pattern having a connection portion on an insulating base surface; A second step of applying a solder resist to a region other than the connecting portion of the copper pattern; A third step of plating tin so that a copper layer of the connection portion is substituted and a tin layer is formed; A fourth step of plating copper so that a copper layer is formed or substituted with the uppermost tin layer; A fifth step of plating tin so as to replace the uppermost copper layer and form a tin layer; And a sixth step of continuously repeating the fourth and fifth steps until n times (where n is an integer of 2 or more) times.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a tin plating method,

TECHNICAL FIELD The present invention relates to a tin plating method for a thick layer by continuous repetition of substitution so that a tin layer can be plated on a printed circuit board up to a predetermined thickness or more.

As a technique relating to the method of substitutional tin plating,

Korean Patent Laid-Open No. 10-2008-0069139 discloses a method for forming a substituted tin alloy plating film, a method for maintaining a substitution tin alloy plating bath and a plating performance,

Wherein the tin alloy plating film contains at least one metal additive selected from the group consisting of silver, bismuth, palladium, indium, zinc and antimony, and the coating The forming method includes the following steps. Forming a lower layer on a copper or copper alloy in a low temperature tin alloy bath of 10 to 50 at low temperature and forming an upper layer on the lower layer in a 40 to 80 high temperature tin alloy plating bath to form a lower layer and an upper layer And forming the substituted tin alloy plating film.

In the surface treatment of printed circuit boards, the electroless plating method is applied because of the discontinuity of the pattern when tin plating is performed, and the substitution plating method is mainly used for the characteristics of tin among them. At this time, Is about 1 mu m.

As a result, it is extremely difficult to tin the substrate so as to have a thickness ranging from 1 탆 to several 탆 in the present plating method. Therefore, the present applicant has developed a method of tin plating of the back layer by continuous repetition of substitution.

literature. Korean Patent Publication No. 10-2008-0069139 (published on July 25, 2008)

The present invention relates to a process for plating a tin layer on a surface of a copper pattern on a substrate by first plating the tin layer with a tin layer by substitution and / or reduction plating to form a copper layer, The tin plating layer can be plated with a predetermined thickness or more by continuously repeating the above-mentioned tin plating.

According to another aspect of the present invention, there is provided a method of forming a tin plating layer on a substrate,

A first step of forming a copper pattern having a connection portion on an insulating base surface;

A second step of applying a solder resist to a region other than the connecting portion of the copper pattern;

A third step of plating tin so that a copper layer of the connection portion is substituted and a tin layer is formed;

A fourth step of plating copper so that a copper layer is formed or substituted with the uppermost tin layer;

A fifth step of plating tin so as to replace the uppermost copper layer and form a tin layer; And

A sixth step of continuously repeating the fourth and fifth steps until n times (where n is an integer of 2 or more) times;

.

The method for the subsequent tin plating by continuous repetition of substitution according to the present invention comprises:

There is the greatest effect that a tin plating layer close to infinity can be formed within a range of a thickness or more, that is, within a range allowed by the material.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a process diagram of a method for the subsequent tin plating by continuous repetition of substitution according to the present invention. FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Prior to this, terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms, and the inventor should appropriately interpret the concepts of the terms appropriately It should be interpreted in accordance with the meaning and concept consistent with the technical idea of the present invention based on the principle that it can be defined. Therefore, the embodiments described in the present specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and are not intended to represent all of the technical ideas of the present invention. Therefore, various equivalents It should be understood that water and variations may be present.

As shown in FIG. 1, the method for the subsequent layer tin plating by continuous repetition permutation according to the present invention comprises:

And is largely composed of the first to sixth steps.

Looking at each step,

The first step is

As shown in [A] of Fig. 1,

Thereby forming a copper pattern 2 having a connection portion on the surface of the insulating base 1.

The base 1 is an insulator made of epoxy or the like.

A copper foil having a thickness of several tens of micrometers is adhered to the surface of the base 1 with an adhesive or the like and a photoresist is applied to the surface of the copper foil layer. Then, the wiring pattern is exposed to the photoresist using a mask, Is transferred.

When the pattern is transferred as described above, a desired pattern is formed through copper foil etching, and then the photoresist is removed to complete the formation of the copper pattern 2.

In the second step

As shown in [A] of Fig. 1,

And the solder resist 3 is applied to a region other than the connecting portion of the copper pattern 2.

Here, the solder resist 3 is a photo-sensitive solder resist (PSR), which is used for the purpose of protecting a portion that does not require brazing or solder coating.

The third step is

As shown in [B] of Fig. 1,

And plating the tin so that the tin layer 4 is formed by replacing the copper layer 2a of the connection portion.

As a result, in the second step, the tin layer 4 is formed for preventing the oxidation of the exposed connection portion and for mounting the electronic component after the solder resist 3 is applied to the region except the connection portion of the copper pattern 2, The tin is plated by the electroless tin plating method.

The basic tin deposition reaction by the electroless tin plating method is as shown in the following chemical formula 1,

(Formula 1)

Cu 0 + Sn 2 + - > Cu 2 + + Sn 0

When the copper in the pattern enters the plating solution containing tin ions, a substitution reaction occurs,

One copper atom is substituted with one tin divalent ion to form one copper divalent ion and one tin atom is generated. In this case, one copper atom is required for the formation of one tin atom, The copper of about 0.5 mu m is corroded. On the other hand, about 2 탆 tin is corroded to coat 1 탆 copper.

Therefore, in the copper pattern 2, the copper component contained in the copper layer 2a of the connection portion and the tin component contained in the electroless tin plating solution are substituted, and the tin layer 4 is formed.

At this time, the tin layer (4) has a plating thickness of 1 mu m maximum depending on the characteristics of the substitution reaction.

As described above, the tin layer 4 formed by plating tin has excellent flexibility, low toxicity to human body, and low melting point, so that solderability is excellent. In addition, it is possible to reduce the production cost by lowering the cost, and it is easy to uniformly form the thin film of 1 탆 or less, easy to manage the liquid, and the bonding strength to the bump made of gold And the use range is gradually increasing.

In the fourth step

As shown in [1] of FIG. 1,

And plating the copper so that the copper layer 5 is formed by replacing and / or reducing the tin layer 4 at the uppermost level.

The uppermost tin layer 4 here means the tin layer 4 located on top of the copper pattern 2 of the base 1.

First, copper is plated on the surface of the uppermost tin layer 4 in parallel with a substitution plating method and a reduction plating method. As shown in the above formula 1 and the following formula 2,

(2)

Sn 0 + Cu 2 + ? Cu 0 + Sn 2 +

Copper ions contained in the electroless copper plating solution react with tin contained in the uppermost tin layer 4 to form copper (Cu), and tin ions are produced.

Therefore, the tin component contained in the uppermost tin layer 4 and the copper component contained in the electroless copper plating solution are replaced and the copper layer 5 is formed.

In order for the copper layer 5 to undergo substitution precipitation, corrosion of the tin layer 4 as a lower layer is accompanied, and about twice the thickness of copper precipitation is corroded. As a result, it is necessary to minimize the amount of tin corrosion for the precipitation of copper, so that copper precipitation by the reduction plating method is required.

A part of the uppermost tin layer 4 is corroded and replaced with the copper layer 5 to form a plating layer having a thickness of 0.1 占 퐉 or less. At this time, the plating layer is reduced to 0.2 占 퐉 or less and the tin layer 4), it is necessary to reduce the amount of tin corrosion during copper plating, so that reduction plating of copper is required.

As a result, a copper plating layer with a thickness of 0.1 탆 or less is further plated to a thickness of 0.4 탆 or less by a reduction plating method to form a copper layer 5 having a total thickness of 0.5 탆 or less, The thickness of the copper plating layer required for the plating layer of 1 탆 or less, wherein no further reduction of the tin layer occurs.

The reduction plating of copper can be carried out by the following formula (3)

(Formula 3)

Cu 2 + + 2HCHO + 4OH - ? Cu + 2HCOO - + H 2 + 2H 2 O

Copper ions in the plating bath are reduced to copper in the copper layer substituted by the formalin reducing agent, and hydrogen and water are produced.

In the fifth step

As shown in Fig. 1 [a]

Plating the tin so that the tin layer 4 is formed by replacing the uppermost copper layer 5 with the tin.

Here, the uppermost copper layer 5 refers to the copper layer 5 located on the top side of the copper pattern 2 of the base 1.

As described above in the third step, one divalent tin ion contained in the electroless tin plating solution reacts with the copper contained in the uppermost copper layer 5 to precipitate tin.

Therefore, the copper component contained in the uppermost copper layer 5 and the tin component contained in the electroless tin plating solution are substituted, and the tin layer 4 is formed.

In the sixth step

As shown in [Ma] and [Bar] of Fig. 1,

The fourth and fifth steps are successively repeated until n (n is an integer of 2 or more) times.

The step of plating the tin layer 4 on the uppermost copper layer 5 and plating the copper layer 5 on the tin layer 4 is repeated continuously.

Therefore, the tin layer 4 can be plated to a desired plating thickness.

At this time, a tin plating layer of 0.8 탆 or less can be formed by one time of copper plating and tin plating, and a tin plating layer of (0.8 × n) 탆 or less can be obtained by repeating n times continuously.

While the present invention has been described with reference to the accompanying drawings, it is to be understood that the present invention has been fully described by way of examples with reference to the accompanying drawings, wherein like reference numerals refer to like elements throughout. Modifications and variations are to be construed as falling within the scope of protection of the present invention.

1: Base
2: Copper pattern
2a: copper layer
3: Solder resist
4: tin layer
5: copper layer

Claims (3)

A first step of forming a copper pattern (2) having a connection part on the surface of an insulating base (1);
A second step of applying a solder resist (3) to a region other than a connecting portion of the copper pattern (2);
A third step of plating tin so that the copper layer (2a) of the connection portion is replaced with a tin layer (4);
A fourth step of plating copper so as to form a copper layer 5 which is substituted or reduced with the uppermost tin layer 4;
A fifth step of plating tin so that the tin layer 4 is formed by replacing the uppermost copper layer 5; And
A sixth step of continuously repeating the fourth and fifth steps until n times (n is an integer of 2 or more) times;
Wherein the first and second tin plating layers are formed on the substrate.
The method according to claim 1,
Wherein the copper plating is performed on the upper surface of the tin layer (4) in the fourth step, and the copper plating is performed after the primary replacement copper plating and then the secondary reduction copper plating is performed again.
3. The method of claim 2,
In the fourth step, the copper layer 5 is characterized in that it has a plating thickness of 0.5 탆 or less as a layer of 0.1 탆 or less and a layer of 0.4 탆 or less are formed by the secondary reduction copper plating by the primary substituted copper plating Wherein the tin plating is performed by a continuous repetition substitution.
KR1020160006198A 2016-01-19 2016-01-19 Thick layer tin plating method by continuous repeat displacement method KR101817930B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110913583A (en) * 2019-10-23 2020-03-24 广州陶积电电子科技有限公司 Method for improving warping of asymmetric copper thick substrate and substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2554711B1 (en) * 2007-07-31 2019-05-15 JX Nippon Mining & Metals Corporation Plated article having metal thin film formed by electroless plating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110913583A (en) * 2019-10-23 2020-03-24 广州陶积电电子科技有限公司 Method for improving warping of asymmetric copper thick substrate and substrate

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