KR20170076252A - Wafer guide and Wafer cleaning bath including the same - Google Patents

Wafer guide and Wafer cleaning bath including the same Download PDF

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Publication number
KR20170076252A
KR20170076252A KR1020150186291A KR20150186291A KR20170076252A KR 20170076252 A KR20170076252 A KR 20170076252A KR 1020150186291 A KR1020150186291 A KR 1020150186291A KR 20150186291 A KR20150186291 A KR 20150186291A KR 20170076252 A KR20170076252 A KR 20170076252A
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KR
South Korea
Prior art keywords
line
wafer
solution
jetting
chemical solution
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KR1020150186291A
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Korean (ko)
Inventor
김강산
임대호
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주식회사 엘지실트론
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Priority to KR1020150186291A priority Critical patent/KR20170076252A/en
Publication of KR20170076252A publication Critical patent/KR20170076252A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Abstract

One embodiment of a wafer cleaning bath comprises a first cleaning bath in which a wafer is placed; A second cleaning tank containing a chemical solution overflowed from the first cleaning tank; And a wafer guide which is disposed in the first cleaning tank and on which the wafer is mounted, wherein the wafer guide is disposed to face the wafer, and has at least one surface of the wafer provided with a plurality of ejection openings for ejecting the chemical solution Lt; / RTI >

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a wafer guide and a wafer cleaning bath including the same,

Embodiments relate to a wafer guide having a structure capable of increasing the cleaning efficiency of a wafer and reducing occurrence of wafer defects, and a wafer cleaning bath including the wafer guide.

The contents described in this section merely provide background information on the embodiment and do not constitute the prior art.

Recently, with the high integration of semiconductors, the processing and storage capacity of information per unit area has been increased. This has demanded a large diameter of a semiconductor wafer, a miniaturization of a circuit line width, and a multilayer wiring.

In order to form a multi-layered wiring on a semiconductor wafer, high-level trajectory of the wafer is required, and a wafer planarization process is required for such high-level trajectory.

The wafer planarization process may include a wafer polishing process and a wafer cleaning process. The wafer polishing step is a step of polishing both surfaces of the wafer with a polishing apparatus.

The wafer cleaning process is a process for removing various impurities adhering to the wafer on which the wafer polishing process is completed. Such a wafer cleaning process may be carried out using a chemical solution which is a cleaning liquid in a cleaning bath.

In the wafer cleaning process, it is appropriate that the impurities are well removed and effectively removed in order to reduce the generation of defective wafers.

Therefore, the embodiment relates to a wafer guide having a structure capable of increasing the cleaning efficiency of a wafer and reducing the occurrence of wafer defects, and a wafer cleaning bath including the wafer guide.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

One embodiment of a wafer cleaning bath comprises a first cleaning bath in which a wafer is placed; A second cleaning tank containing a chemical solution overflowed from the first cleaning tank; And a wafer guide which is disposed in the first cleaning tank and on which the wafer is mounted, wherein the wafer guide is disposed to face the wafer, and has at least one surface of the wafer provided with a plurality of ejection openings for ejecting the chemical solution Lt; / RTI >

Wherein the wafer guide has a disk shape and has a plurality of jetting ports formed on at least one surface thereof; And a wafer mounting part formed at a lower portion of the solution jetting part and having a recessed groove on which the wafer is mounted.

In an embodiment of the wafer cleaning bath, the plurality of solution jetting portions may be provided, each of the solution jetting portions may be aligned at regular intervals, and the wafer seating portion may be formed between the solution jetting portions facing each other.

The wafer may be disposed between the solution jetting portions facing each other among the plurality of jetting ports.

One embodiment of the wafer cleaning bath may further comprise a solution supply line connected to the jetting port.

Wherein the solution supply line includes: a first line through which the chemical solution flows into the first cleaning bath from an external supply source; A second line connected to the first line and formed under the wafer guide; And a third line having one side connected to the second line and the other side connected to at least a part of the plurality of injection ports.

The second line may be formed through the lower portion of the solution jetting portion and the lower portion of the wafer seating portion, and the third line may be provided in plurality and each of the third lines may be branched from the second line .

The solution supply line may further include a fourth line connected to the third line, wherein the solution supply line is formed in a ring shape or a plurality of arcs in the solution injection part.

And the fourth line may be branched from the third line.

The plurality of ejection openings may be arranged at regular intervals in the circumferential direction of the fourth line.

The fourth line may be formed in a direction perpendicular to the third line.

The third line may be formed vertically in the solution spraying portion.

The plurality of ejection openings may be radially arranged on at least one surface of the solution ejecting portion with respect to the center of the solution ejecting portion.

The plurality of ejection openings may be symmetrically arranged in the lower half of the disc-shaped solution ejecting portion.

One embodiment of the wafer guide includes: a solution jetting portion provided in a disk shape and having a plurality of jetting ports formed on at least one surface thereof; A wafer mounting part formed at a lower portion of the solution jetting part and having a recessed groove on which the wafer is mounted; A first line through which a chemical solution flows from an external source; A second line connected to the first line and formed below the solution jetting portion and the wafer seating portion; A third line having one side connected to the second line and the other side connected to the injection port; And a fourth line formed in a circular shape in the solution jetting portion and connected to the third line.

In the embodiment, the solution injecting portion of the wafer guide can prevent the phenomenon of re-adsorption between the two wafers facing each other by isolating two adjacent wafers from each other, thereby remarkably reducing the cleaning efficiency of the wafer, The occurrence of wafer defects can be reduced.

In the embodiment, the occurrence of stagnation and vortex of the chemical solution and impurities is remarkably suppressed in the spacing space, and the chemical solution can easily escape to the upper portion of the spacing space. Therefore, the cleaning efficiency of the wafer is improved, Can also be significantly suppressed.

1 is a side view illustrating one embodiment of a wafer cleaning bath in accordance with one embodiment.
2 is an enlarged cross-sectional view showing part A of Fig.
3 is a view for explaining a structure of a solution injection part according to one embodiment. 3 is a cross-sectional view taken along line XX in Fig.
4 is a view for explaining a structure of a solution injection part according to another embodiment.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The embodiments are to be considered in all aspects as illustrative and not restrictive, and the invention is not limited thereto. It is to be understood, however, that the embodiments are not intended to be limited to the particular forms disclosed, but are to include all modifications, equivalents, and alternatives falling within the spirit and scope of the embodiments. The sizes and shapes of the components shown in the drawings may be exaggerated for clarity and convenience.

The terms "first "," second ", and the like can be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. In addition, terms specifically defined in consideration of the constitution and operation of the embodiment are only intended to illustrate the embodiments and do not limit the scope of the embodiments.

In the description of the embodiments, when it is described as being formed on the "upper" or "on or under" of each element, the upper or lower (on or under Quot; includes both that the two elements are in direct contact with each other or that one or more other elements are indirectly formed between the two elements. Also, when expressed as "on" or "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

It is also to be understood that the terms "top / top / top" and "bottom / bottom / bottom", as used below, do not necessarily imply nor imply any physical or logical relationship or order between such entities or elements, But may be used only to distinguish one entity or element from another entity or element.

1 is a side view illustrating one embodiment of a wafer cleaning bath in accordance with one embodiment. 2 is an enlarged cross-sectional view showing part A of Fig. The cleaning bath of the embodiment may include a first cleaning tank 100, a second cleaning tank 200, a wafer guide 300, a jetting port 400, and a solution supply line 500.

In the first cleaning bath 100, a wafer W to be cleaned is disposed, and a chemical solution for cleaning the wafer W may be contained. At this time, the chemical solution may be stored in the first cleaning bath 100 such that the wafer W is completely immersed in the chemical solution.

The chemical solution may be stored in the first washing tub 100 for a predetermined time. That is, the chemical solution flows into the first cleaning tank 100 through the solution supply line 500, is stored in the first cleaning tank 100 for a predetermined time to clean the wafer W, Overflows to the second washing tank 200 and can be discharged to the outside of the bath through the second washing tank 200.

In order to reduce the amount of the chemical solution consumed, the chemical solution that has escaped to the outside of the bath is removed from the first washing tub 100 through the solution supply line 500 after removing impurities using a filter (not shown) Can be supplied. That is, the chemical solution that has escaped to the outside of the bath may be re-supplied to the first washing tub 100 through a recycle line (not shown).

At this time, the chemical solution may be prepared by mixing hydrofluoric acid (HF), hydrochloric acid (HCl), and the like at a predetermined ratio to the deionized water to enhance the washing power.

The second cleaning bath 200 is a place where the chemical solution contained in the first cleaning bath 100 escapes to the outside of the bath. That is, the second cleaning tank 200 may be provided on the upper side of the first cleaning tank 100, as shown in FIG.

The first cleaning tank 100 contains the chemical solution flowing from the solution supply line 500 and the level of the chemical solution in the first cleaning tank 100 can be raised. When the level of the chemical solution contained in the first cleaning tank 100 becomes higher than the discharge site of the side wall of the first cleaning tank 100, the chemical solution is overflowed from the first cleaning tank 100, ).

The second cleaning tank 200 may serve to store the chemical solution overflowing from the first cleaning tank 100. The chemical solution contained in the second cleaning tank 200 for a predetermined time may be filtered by the filter through the recycle line and then introduced into the first cleaning tank 100 through the solution supply line 500.

The wafer guide 300 may be disposed in the first cleaning tank 100 and the wafer W may be seated. At this time, the wafer guide 300 may be provided, for example, so that the lower part of the wafer guide 300 is coupled to the bottom of the first washing tub 100.

The wafer guide 300 may include a solution spraying part 310 and a wafer seating part 320. The solution spraying unit 310 may be disposed opposite to the wafer W and may have a shape similar to that of the wafer W. [ The wafer W may be provided in a disk shape, for example, so that the solution spraying part 310 may be provided in a disk shape similar to the shape of the wafer W.

One surface of the solution spraying part 310 can spray the chemical solution on one surface of the wafer W facing the surface. For this, a plurality of jetting ports 400 may be formed on one or both sides of the solution jetting unit 310, which will be described in detail below with reference to FIG. 2 and the like.

The wafer seating part 320 may be formed under the solution injection part 310 and may have a recessed groove 321 in which the wafer W is seated. The wafer W is placed on the wafer seating part 320 and placed on the bath, and various impurities attached to the wafer W can be removed by the chemical solution.

The wafer W may be polished on both sides through a polishing process. Impurities such as particles contained in the slurry used as the polishing particles and the slurry used in the polishing process can be adhered to the surface of the wafer W in this polishing process. The impurities such as the particles and the foreign substances adhering to the wafer W can be removed by the chemical solution.

As shown in FIGS. 1 and 2, a plurality of the solution spraying parts 310 may be provided, and the solution spraying parts 310 may be spaced apart from each other at regular intervals. In addition, the wafer seating part 320 including the depression grooves 321 may be formed between the solution spraying parts 310 facing each other.

At this time, the wafer W may be disposed between the solution injecting parts 310, which are adjacent to each other, of the plurality of injection ports 400.

Due to this structure, the wafers W can be arranged in a plurality of the wafer guides 300, and each of the wafers W placed thereon can be isolated from each other by the solution jetting unit 310.

If the solution injection part 310 is not provided, the adjacent wafers W are arranged so as to face each other without being separated from each other. The arrangement of the wafers W is There are the following problems.

Impurities separated by the action of a chemical solution in one wafer W can be reattached to the surface of another wafer W facing the wafer W. In the case where two adjoining wafers W are provided so as to face each other,

Such a phenomenon of re-adhesion of impurities deteriorates the cleaning efficiency of the wafer W in the bath, and therefore, the wafer W after cleaning is not sufficiently cleaned, and defects may occur.

In the embodiment, the solution jetting section 310 of the wafer guide 300 separates two adjacent wafers W from each other, thereby preventing the re-adsorption phenomenon between the two wafers W facing each other The cleaning efficiency of the wafer W can be increased and the occurrence of defects in the wafer W can be reduced.

2 is an enlarged cross-sectional view showing part A of Fig. 3 is a view for explaining the structure of the solution spraying part 310 according to one embodiment. 3 is a cross-sectional view taken along the line X-X in FIG.

As shown in FIG. 2, the wafer guide 300 of the embodiment may include a jetting port 400 and a solution supply line 500 for supplying a solution to the jetting port 400.

The injection port 400 may be provided in a plurality of nozzles for spraying the chemical solution on at least one surface of the wafer W. [ That is, the injection port 400 may be provided on at least one surface of the solution spraying unit 310.

2, the solution injection part 310 located at the edge of the wafer guide 300 may have the injection port 400 formed on one surface thereof, and the solution injection part 310, The injection port 400 may be formed on both sides of the yarn 310 to penetrate the solution injection part 310.

The solution supply line 500 may be connected to the injection port 400 and may include a first line 510, a second line 520, a third line 530, and a fourth line 540. The solution supply line 500 may serve as a path through which the chemical solution is supplied from the external supply source to the injection port 400.

The first line 510 is a path through which the chemical solution flows into the first cleaning bath 100 from an external supply source (not shown) in which the chemical solution is stored. One side of the first line 510 may be connected to the external source, and the other side of the first line 510 may be connected to the second line 520.

As shown in FIG. 1, the first line 510 may be formed to penetrate the bottom of the bath, for example, to introduce a chemical solution from the external source located outside the bath, . Of course, in another embodiment, the first line 510 may be formed to penetrate the side wall of the bath.

The second line 520 may be formed below the wafer guide 300 and one side thereof may be connected to the 21st line 510. The second line 520 may be formed in a direction in which the plurality of wafers W and the solution injecting parts 310 are aligned by passing through the lower part of the solution injecting part 310 and the lower part of the wafer seating part 320 have.

The third line 530 may have one side connected to the second line 520 and the other side connected to at least a portion of the plurality of injection ports 400. A plurality of the third lines 530 may be provided, and each of the third lines 530 may be branched from the second line 520.

That is, one side of the third line 530 is connected to one second line 520, and the chemical solution is supplied to the plurality of third lines 530 from the second line 520, Lt; / RTI >

The third line 530 may be formed vertically in the solution injector 310. Therefore, the chemical solution flowing into the third line 530 is supplied to each of the injection ports 400, which are spaced apart from each other in the vertical direction of the solution injecting unit 310 and are directly connected to the third line 530 .

The third line 530 may be connected to the fourth line 540 provided in the solution injecting unit 310 because the third line 530 is provided in the vertical direction of the solution injecting unit 310. Therefore, the chemical solution may be supplied to the injection ports 400 connected to the third line 530 through the fourth line 540 without being directly connected to the third line 530.

In another embodiment, the second line 520 is not provided, and the first line 510 is directly connected to the third line 530. In this case, the third line 530 may be formed through the lower part of the wafer seating part 320, and the first line 510 connected to the plurality of third lines 530 may be formed in the third Line 530 in the same manner.

3, the fourth line 540 is formed in a ring shape, for example, in the third line 530 and the solution injecting portion 310, and the third line 530 As shown in FIG.

The fourth line 540 may be formed in a direction perpendicular to the third line 530 branched from the third line 530 and provided in the vertical direction.

Due to such a structure, the chemical solution can be supplied to the entirety including the center portion and the edge portion of the disk-shaped solution injecting portion 310 through the fourth line 540.

Referring to FIG. 3, the plurality of injection ports 400 may be disposed at regular intervals in the circumferential direction of the fourth line 540, for example. That is, the plurality of injection openings 400 may be radially arranged on at least one surface of the solution injecting portion 310 with respect to the center of the solution injecting portion 310.

At this time, the injection port 400 may be radially arranged on one side of the solution injecting unit 310 located at the edge of the solution injecting unit 310, and the solution injecting unit 310 The injection port 400 may be formed radially through the solution injection part 310 on both sides.

Due to such a structure, the cleaning of the wafer W with the chemical solution can proceed effectively. Referring again to FIG. 2, the wafer W may be disposed in the spacing space S between the solution spraying parts 310 facing each other.

In the spacing space S, a vortex may be formed. Particularly, since the lower part of the spacing space S is closed, the chemical solution can be stagnated to form a vortex as compared with the upper part of the opened spacing space S.

Impurities removed from the wafer W in the chemical solution can not be discharged from the first washing tub 100 and can be stagnated in the stagnant region where the vortex is formed. Such stagnant impurities may deteriorate the cleaning ability of the chemical solution, and stagnant impurities may be reattached to the wafer W. [

However, in the embodiment, the injection port 400 is provided radially throughout the solution spraying part 310, and the chemical solution is sprayed to both surfaces of the wafer W through the injection ports 400, The stagnation and vortex of the chemical solution and the impurities do not occur in the lower part of the substrate (S), or the rate of occurrence thereof may be significantly lowered.

Therefore, in the embodiment, the generation of the vapors and vapors of the chemical solution and impurities is remarkably suppressed in the spacing space S, and the chemical solution can easily escape to the upper portion of the spacing space S, The cleaning efficiency of the wafer W can be improved and the occurrence of defects in the wafer W can be significantly suppressed.

4 is a view for explaining the structure of the solution spraying unit 310 according to another embodiment. As shown in FIG. 4, the fourth line 540 may be formed in a plurality of circular arc shapes below the solution spraying part 310.

Accordingly, the plurality of injection openings 400 may be symmetrically disposed on the lower half of the disk-shaped solution injecting portion 310. At this time, the plurality of injection openings 400 may be arranged at regular intervals in the arc direction of the fourth line 540.

As described above, the stagnation and swirling of the chemical solution and the impurities can occur mainly in the lower part of the closed spaced space S. Therefore, when the injection port 400 through which the chemical solution is injected is arranged intensively in the lower part of the spacing space S, it is possible to remarkably suppress stagnation and vortex generation of the chemical solution and the impurities.

Therefore, the embodiment shown in Fig. 4 can obtain an extremely similar effect as compared with the embodiment shown in Figs. 2 and 3, and can simplify the structure of the fourth line 540 and the injection port 400 more easily and simply There is an advantage that it can be formed.

While only a few have been described above with respect to the embodiments, various other forms of implementation are possible. The technical contents of the embodiments described above may be combined in various forms other than the mutually incompatible technologies, and may be implemented in a new embodiment through the same.

100: The first washing machine
200: Second-tier construction
300: Wafer guide
310:
320: Wafer seating part
321: recessed groove
400: nozzle
500: solution supply line
510: first line
520: second line
530: Line 3
540: fourth line
W: Wafer
S: Spacing space

Claims (15)

A first cleaning tank in which a wafer is disposed;
A second cleaning tank containing a chemical solution overflowed from the first cleaning tank;
And a wafer guide disposed in the first cleaning bath and on which the wafer is mounted,
Wherein the wafer guide comprises:
And a plurality of ejection openings for ejecting the chemical solution are provided on at least one surface of the wafer, the plurality of ejection openings being opposed to the wafer. The method according to claim 1,
Wherein the wafer guide comprises:
A solution spraying part provided in a disk shape and having the plurality of jetting ports formed on at least one surface thereof; And
A wafer mounting part formed at a lower portion of the solution jetting part and having a recessed groove on which the wafer is mounted,
Wherein the wafer cleaning bath comprises: 3. The method of claim 2,
Wherein the plurality of solution injecting portions are provided, and each of the solution injecting portions is arranged at regular intervals, and the wafer seating portion is formed between the solution injecting portions facing each other. The method of claim 3,
Wherein,
Wherein the plurality of jetting ports are disposed between the solution jetting portions facing each other among the plurality of jetting ports. 3. The method of claim 2,
And a solution supply line connected to the jetting port. 6. The method of claim 5,
The solution supply line includes:
A first line through which the chemical solution flows into the first cleaning bath from an external source;
A second line connected to the first line and formed under the wafer guide; And
A third line connected to one end of the plurality of nozzles and connected to the second line,
≪ / RTI > The method according to claim 6,
The second line is formed so as to penetrate the lower portion of the solution jetting portion and the lower portion of the wafer seating portion,
Wherein the third line is provided in plurality and each of the third lines is branched from the second line. 8. The method of claim 7,
The solution supply line includes:
Further comprising a fourth line connected to the third line, the fourth line being formed in a ring shape or a plurality of arcs in the solution jetting portion. 9. The method of claim 8,
And the fourth line is branched from the third line. 9. The method of claim 8,
The plurality of ejection openings
And are arranged at regular intervals in the circumferential direction of the fourth line. 9. The method of claim 8,
The fourth line is a line,
And is formed in a direction perpendicular to the third line. The method according to claim 6,
In the third line,
Wherein the wafer cleaning bath is formed vertically in the solution spraying portion. 3. The method of claim 2,
The plurality of ejection openings
And is radially disposed on at least one surface of the solution jetting portion with respect to the center of the solution jetting portion. 3. The method of claim 2,
The plurality of ejection openings
And is arranged symmetrically on the lower half of the disk-shaped solution jetting portion. A solution dispensing part provided in a disc shape and having a plurality of ejection openings formed on at least one surface thereof;
A wafer mounting part formed at a lower portion of the solution jetting part and having a recessed groove on which the wafer is mounted;
A first line through which a chemical solution flows from an external source;
A second line connected to the first line and formed below the solution jetting portion and the wafer seating portion;
A third line having one side connected to the second line and the other side connected to the injection port; And
A fourth line connected to the third line,
.
KR1020150186291A 2015-12-24 2015-12-24 Wafer guide and Wafer cleaning bath including the same KR20170076252A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050065839A (en) * 2003-12-24 2005-06-30 동부아남반도체 주식회사 Wafer carrier for use in chemical mechanical polishing process
KR20070069784A (en) * 2005-12-28 2007-07-03 동부일렉트로닉스 주식회사 Apparatus for cleaning residue in the wet station

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050065839A (en) * 2003-12-24 2005-06-30 동부아남반도체 주식회사 Wafer carrier for use in chemical mechanical polishing process
KR20070069784A (en) * 2005-12-28 2007-07-03 동부일렉트로닉스 주식회사 Apparatus for cleaning residue in the wet station

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