JP6631687B1 - Cleaning tank and cleaning method for semiconductor wafer - Google Patents

Abstract

The present invention provides a semiconductor wafer cleaning tank and a cleaning method capable of cleaning the peripheral portion of a semiconductor wafer more uniformly. A semiconductor wafer cleaning tank for cleaning a semiconductor wafer by immersing the semiconductor wafer in a cleaning liquid, the cleaning tank having an opening at an upper portion for accommodating the semiconductor wafer and storing the cleaning liquid. And a plurality of wafer guides 32 having a plurality of slots S provided on a surface thereof, the plurality of slots S being defined by the first side surface portion 32a and the second side surface portion 32b and supporting the semiconductor wafer W upright. In a semiconductor wafer W cleaning tank for cleaning a plurality of semiconductor wafers W while overflowing the cleaning liquid from the opening 11a of the tank main body 11, the cleaning liquid is applied to each of the first side surface portion 32a and the second side surface portion 32b. A cleaning liquid jetting port 32c for jetting is provided. [Selection diagram] FIG.

Description

  The present invention relates to a cleaning tank and a cleaning method for a semiconductor wafer.

  In general, a semiconductor wafer represented by a silicon wafer grows a single-crystal ingot, cuts the grown single-crystal ingot into blocks, slices into thin blocks, and performs rough polishing (lapping), chamfering, mirror polishing (polishing), etching, and the like. It is manufactured through the steps of

  In the above process, particles such as polishing powder of the semiconductor wafer are generated, adhere to the semiconductor wafer, and contaminate the surface. Such contamination not only degrades the quality of the semiconductor wafer, but also causes defects in the semiconductor device and causes deterioration of device characteristics, thereby lowering the yield of the semiconductor device. Therefore, in order to reduce contamination on the surface of the semiconductor wafer, the semiconductor wafer is generally cleaned using an etching solution such as an acid or an alkali or a cleaning solution such as pure water.

  FIG. 1A shows an example of a cleaning tank for cleaning a general semiconductor wafer. The semiconductor wafer cleaning tank 100 shown in this figure is a batch-type cleaning tank in which a plurality of (for example, 25) semiconductor wafers W are immersed in a cleaning liquid and washed at a time, and includes a tank body 11 and a plurality of semiconductor wafers W. A wafer guide 12 and a cleaning liquid supply unit 13 are provided.

  The tank main body 11 has an opening 11a at the top, accommodates a plurality of semiconductor wafers W therein, and stores a cleaning liquid L for cleaning the semiconductor wafers W. Further, as shown in FIG. 1B, the wafer guide 12 has a plurality of slots S defined by a first side surface portion 12a and a second side surface portion 12b at a predetermined interval (for example, as shown in FIG. 1B). 10 mm), so that the semiconductor wafer W is supported upright in each slot S. The slot S illustrated in FIG. 1B has a V-shaped cross section.

  Further, the cleaning liquid supply unit 13 supplies the cleaning liquid from below the semiconductor wafer W, and allows the cleaning liquid to flow upward from below the semiconductor wafer W so that the cleaning liquid overflows from the opening 11 a of the tank body 11. It is configured to clean the semiconductor wafer W.

  In the case of such an overflow type batch type cleaning tank 100, since the cleaning liquid supply unit 13 is disposed below the wafer guide 12, an area where the flow of the cleaning liquid from the cleaning liquid supply unit 13 is blocked (hereinafter, “dead zone”) ) Is present, and the peripheral portion of the semiconductor wafer W cannot be uniformly cleaned.

  Therefore, in Patent Document 1, as shown in FIG. 2, a slot S having a V-shaped cross section is defined on the wafer guide 22 by the first side surface portion 22a and the second side surface portion 22b, and the space between the slots S is defined. A cleaning tank for providing a cleaning liquid injection port 22d in the convex portion 22c and injecting the cleaning liquid to make the flow of the cleaning liquid in the cleaning tank more uniform and for cleaning the semiconductor wafer W more uniformly is described.

JP-T-2012-507881

  However, in the cleaning tank described in Patent Literature 1, a dead zone D still exists between the semiconductor wafer W arranged in the slot S and the first side surface portion 22a and the second side surface portion 22b. The periphery of the semiconductor wafer W cannot be uniformly cleaned.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor wafer cleaning tank and a cleaning method that can more uniformly clean the peripheral portion of a semiconductor wafer. .

The present invention for solving the above problems is as follows.
[1] A semiconductor wafer cleaning tank for immersing a plurality of semiconductor wafers in a cleaning liquid for cleaning, the tank main body having an opening at an upper portion for accommodating the plurality of semiconductor wafers and storing the cleaning liquid. And a plurality of wafer guides having a plurality of slots provided on a surface thereof, the plurality of slots being defined by a first side surface portion and a second side surface portion and supporting the semiconductor wafer in an upright position. In a semiconductor wafer cleaning tank for cleaning the plurality of semiconductor wafers while overflowing from the opening,
In each of the first side surface portion and the second side surface portion, a cleaning liquid ejection port for ejecting the cleaning liquid is provided, and a jet direction of the cleaning liquid ejected from the cleaning liquid ejection port of the first side portion. When the direction of injection of the cleaning liquid injected from the cleaning liquid injection port on the second side is viewed from a direction perpendicular to the main surface of the semiconductor wafer in a state where the semiconductor wafer is supported upright in the slot. A center of the semiconductor wafer, a contact point between the semiconductor wafer and the first side surface, and a contact point between the semiconductor wafer and the second side surface, the surface being perpendicular to the main surface of the semiconductor wafer. A semiconductor wafer cleaning tank characterized by being opposite to each other .

[2] The cleaning liquid ejection port is configured to eject the cleaning liquid ejected from the cleaning liquid ejection port when the semiconductor wafer is viewed from a direction perpendicular to the main surface of the semiconductor wafer in a state where the semiconductor wafer is vertically supported by the slot. The semiconductor wafer cleaning tank according to [1], wherein the direction is configured to be inclined with respect to a direction from the cleaning liquid injection port toward the center of the semiconductor wafer.

[3] With respect to each of the first side surface portion and the second side surface portion, the cleaning liquid injection port is provided at both a deep position and a shallow position in a depth direction of the slot from a contact point that contacts the semiconductor wafer. The cleaning tank for a semiconductor wafer according to the above [1] or [2], which is provided.

[4] The cleaning liquid injection port provided at the deep position is provided at the deep position when viewed from a direction perpendicular to the main surface of the semiconductor wafer in a state where the semiconductor wafer is supported upright in the slot. The semiconductor wafer cleaning tank according to the above [3] , wherein the cleaning liquid injection direction from the cleaning liquid injection port is configured to be perpendicular to a straight line passing through the cleaning liquid injection port and the center of the semiconductor wafer. .

[5] The position of the cleaning liquid injection port provided in the first side surface portion is such that when the semiconductor wafer is viewed from a direction perpendicular to the main surface of the semiconductor wafer in a state where the semiconductor wafer is supported upright in the slot, The cleaning tank for a semiconductor wafer according to any one of [1] to [4] , which is different from a position of a cleaning liquid injection port provided on the second side surface portion.

[6] The semiconductor wafer cleaning tank according to any one of [1] to [5] , further including a cleaning liquid supply unit configured to supply the cleaning liquid from below the plurality of semiconductor wafers.

[7] A method for cleaning a semiconductor wafer, comprising cleaning a plurality of semiconductor wafers using the semiconductor wafer cleaning tank according to any one of [1] to [6] .

[8] The method for cleaning a semiconductor wafer according to [7] , wherein only the semiconductor wafer is rinsed using pure water as the cleaning liquid.

  According to the present invention, the peripheral portion of the semiconductor wafer can be more uniformly cleaned.

It is a figure which shows an example of the cleaning tank of a general semiconductor wafer, (a) is an overall view, (b) is a figure which shows a wafer guide. FIG. 9 is a view showing a wafer guide in a cleaning tank described in Patent Document 1. BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows an example of the cleaning tank of the semiconductor wafer by this invention, (a) is an overall view, (b) is a figure which shows a wafer guide. It is a figure showing an example of the suitable composition of the wafer guide in the cleaning tank of the semiconductor wafer by the present invention. FIG. 6 is a view showing another example of a preferred configuration of the wafer guide in the semiconductor wafer cleaning tank according to the present invention. FIG. 7 is a view showing still another example of a preferred configuration of the wafer guide in the semiconductor wafer cleaning tank according to the present invention.

(Semiconductor wafer cleaning tank)
Hereinafter, embodiments of the present invention will be described with reference to the drawings. The semiconductor wafer cleaning tank according to the present invention is a semiconductor wafer cleaning tank for cleaning a plurality of semiconductor wafers by immersing the semiconductor wafers in a cleaning liquid, and having an opening at an upper portion for accommodating a plurality of semiconductor wafers and cleaning liquid. And a plurality of wafer guides each having a plurality of slots provided on a surface thereof, the plurality of slots being defined by a first side surface portion and a second side surface portion, and provided with a plurality of slots for vertically supporting a semiconductor wafer. A semiconductor wafer cleaning tank for cleaning a plurality of semiconductor wafers while overflowing from an opening of the main body. Here, a cleaning liquid injection port for jetting a cleaning liquid is provided on each of the first side surface portion and the second side surface portion.

  As described above, in the wafer guide 22 in the cleaning tank described in Patent Literature 1, the cleaning liquid injection port 22d is provided in the convex portion 22c between the slots S as shown in FIG. However, even in the cleaning tank described in Patent Literature 1, a dead zone D still exists between the semiconductor wafer W disposed in the slot S and the first side surface portion 22a and the second side surface portion 22b. The peripheral portion of the wafer W cannot be uniformly cleaned.

  The present inventor has earnestly studied a method of eliminating the dead zone D and cleaning the peripheral portion of the semiconductor wafer W more uniformly. As a result, it has been found that it is extremely effective to provide a cleaning liquid injection port for jetting a cleaning liquid on each of the first side surface portion and the second side surface portion defining the slot, and the present invention has been completed.

  3A and 3B show an example of a semiconductor wafer cleaning tank 1 according to the present invention, wherein FIG. 3A shows an overall view and FIG. 3B shows a wafer guide 32, respectively. The same components as those in FIG. 1 are denoted by the same reference numerals. In the cleaning tank 1 shown in FIG. 3A, as shown in FIG. 3B, each of the first side surface portion 32a and the second side surface portion 32 defining the slot S of the wafer guide 32 includes: A cleaning liquid injection port 32c for injecting the cleaning liquid is provided.

  The semiconductor wafer W is arranged in each of the slots V provided in the wafer guide 32 of the cleaning tank 1 configured as described above, and provided on the first side surface portion 32a and the second side surface portion 32b of the wafer guide 32. The cleaning liquid is injected from the cleaning liquid injection port 32c so that the cleaning liquid overflows from the opening 11a of the tank body 11. Thereby, the cleaning liquid can be supplied also to the dead zone D shown in FIG. 2B, and the peripheral portion of the semiconductor wafer W can be more uniformly cleaned.

  As shown in FIG. 3A, a cleaning liquid supply unit 13 that supplies a cleaning liquid from below a plurality of semiconductor wafers W is further provided as in the conventional cleaning tank 100, and is provided at the bottom of the tank main body 11. Although the cleaning effect of the semiconductor wafer W may be improved by improving the flow of the cleaning liquid, the cleaning liquid may be supplied only by the wafer guide 32.

In the cleaning tank 1 according to the present invention, as shown in FIG. 4, the cleaning liquid injection port 32c is viewed from a direction perpendicular to the main surface of the semiconductor wafer W in a state where the semiconductor wafer W is supported upright in the slot S. when the injection direction D _l of the cleaning liquid ejected from the cleaning liquid injection port 32c it is preferably configured so as to be inclined with respect to the direction D _c extending from the cleaning liquid ejection port 32c to the center C of the semiconductor wafer W.

That is, the injection direction D _l cleaning solution cleaning solution flowing through the cleaning liquid passage 32d provided in the wafer guide 32 is ejected from the cleaning liquid injection port 32c is, a direction directed from the cleaning liquid injection port 32c in the center C of the semiconductor wafer W D _When the cleaning liquid is parallel to _c (that is, when the cleaning liquid is directed to the center C of the semiconductor wafer W), all of the force applied to the semiconductor wafer W by the cleaning liquid injected from the cleaning liquid injection port 32 is applied to the semiconductor wafer W. Toward the center (center of gravity) C of. As a result, the semiconductor wafer W is lifted away from the wafer guide 32 due to the injection of the cleaning liquid, and the peripheral portion of the semiconductor wafer W is damaged or particles are generated due to re-contact with the wafer guide 32, and the slot S is contaminated. When performing the next batch cleaning, another semiconductor wafer W may be contaminated.

Accordingly, the injection direction D _l of the cleaning liquid ejected from the cleaning liquid injection port 32c is, by inclining with respect to the direction D _c extending from the cleaning liquid ejection port 32c to the center C of the semiconductor wafer W, is attached to the semiconductor wafer W by the cleaning liquid Of the force, the component toward the center (center of gravity) C of the semiconductor wafer W can be reduced, and the semiconductor wafer W can be prevented from floating away from the wafer guide 32.

  As shown in FIG. 5, the position of the cleaning liquid injection port 32c provided on the first side surface portion 32a is perpendicular to the main surface of the semiconductor wafer W in a state where the semiconductor wafer W is supported upright in the slot S. When viewed from the direction, the position may be different from the position of the cleaning liquid injection port 32c provided in the second side surface part 32b. That is, even if the cleaning liquid injection port 32 provided on the first side surface part 32a and the cleaning liquid injection port 32b provided on the second side surface part 32b are not provided at symmetrical positions with respect to the semiconductor wafer W. Good. In FIG. 5, the cleaning liquid injection port 32c provided on the first side surface 32a is indicated by a two-dot chain line, and the cleaning liquid injection port 32c provided on the second side surface 32a is indicated by a broken line.

Further, the injection direction D ₁ of the cleaning liquid ejected from the cleaning liquid injection port 32c of the first side portion 32a, and the injection direction D ₂ of the cleaning liquid ejected from the cleaning liquid injection port 32c of the second side 32b is, FIG. 5 As shown in FIG. 3, when the semiconductor wafer W is viewed from a direction perpendicular to the main surface of the semiconductor wafer W in a state where the semiconductor wafer W is supported upright in the slot S, the center of the semiconductor wafer W, the semiconductor wafer W, and the first side surface portion. It is preferable that the directions are opposite to each other with respect to a direction perpendicular to a straight line 1 passing through a contact point P with the semiconductor wafer W and the second side surface part 32b.

  As described above, a force is applied to the semiconductor wafer W by the injection of the cleaning liquid from the cleaning liquid injection port 32c. When a component of the applied force in one circumferential direction of the semiconductor wafer W is large, When the semiconductor wafer W rotates and rubs against the wafer guide 32, the peripheral portion of the semiconductor wafer W is scratched, or particles are generated to contaminate the slot S, and when the next batch cleaning is performed, another semiconductor wafer W is removed. May be contaminated.

Therefore, as shown in FIG. 5, the injection direction D ₁ of the cleaning liquid ejected from the cleaning liquid injection port 32c of the first side portion 32a, the injection direction of the cleaning liquid ejected from the cleaning liquid injection port 32c of the second side surface 32b D ₂ with respect to the direction perpendicular to the straight line 1 (that is, the components in the straight directions perpendicular to the straight line 1 of the ejection direction D ₁ and the ejection direction D ₂ are opposite to each other), The rotation of the semiconductor wafer W can be suppressed.

  Further, the number of the cleaning liquid injection ports 32c provided on each of the first side surface portion 32a and the second side surface portion 32b is not particularly limited, and may be one or more. When a plurality of cleaning liquid injection ports 32c are provided, as shown in FIGS. 6A and 6B, each of the first side surface 32a and the second side surface 32b has a contact point P that comes into contact with the semiconductor wafer W. It is preferable that it is provided not only at the shallow position H in the depth direction of the slot S but also at the deep position L. Thereby, the cleaning effect of the portion near the end face of the semiconductor wafer W can be enhanced. In FIG. 6, the number of the cleaning liquid ejection ports 32c provided at the shallow position H and the deep position L is one, but is not limited to one and may be plural. Further, the number of cleaning liquid injection ports 32c may be different between the shallow position H and the deep position L.

  The cleaning liquid injection port 32 provided at the shallow position H supplies a cleaning liquid to a region between the semiconductor wafer W and the first side surface portion 32a and the second side surface portion 32c to further increase the peripheral portion of the semiconductor wafer W. For uniform cleaning, it is preferable to be provided near the contact point P. Specifically, the cleaning liquid injection port 32c may be provided so that the distance between the center of the cleaning liquid injection port 32c and the contact point P is 1 mm or more and 5 mm or less in the depth direction of the slot S. preferable.

  By setting the distance between the center of the cleaning liquid injection port 32c provided at the shallow position H and the contact point P to be 1 mm or more, the semiconductor wafer W may be displaced due to the variation when the semiconductor wafer W is supported upright in the slot S. The contact with the cleaning liquid injection port 32c can be prevented. Further, by setting the distance between the center of the cleaning liquid injection port 32c and the contact point P to be 5 mm or less, the flow of the cleaning liquid is generated even near the contact point P, and the cleaning effect in the area near the contact point P is enhanced. Can be. When a plurality of cleaning liquid injection ports 32c are provided at a shallow position H, the one provided closest to the contact point P may satisfy the above range.

  Further, the cleaning liquid injection port 32c provided at the deep position L is also preferably provided near the contact point P from the viewpoint of the cleaning effect on the end face of the semiconductor wafer W. Specifically, the cleaning liquid injection port 32 is provided so that the distance between the center of the cleaning liquid injection port 32 and the contact point P is 1 mm or more and 5 mm or less in the depth direction of the slot S. preferable.

  The effect within the above range is the same as that of the cleaning liquid injection port 32c at the shallow position L, and the distance between the center of the cleaning liquid injection port 32c provided at the deep position L and the contact point P is 1 mm or more. Accordingly, it is possible to prevent the semiconductor wafer W from coming into contact with the cleaning liquid jetting port 32c due to a variation in erecting and supporting the semiconductor wafer W in the slot S. Further, by setting the distance between the center of the cleaning liquid injection port 32c and the contact point P to be 5 mm or less, the flow of the cleaning liquid is generated even near the contact point P, and the cleaning effect in the area near the contact point P is enhanced. Can be. When a plurality of cleaning liquid injection ports 32c are provided at the deep position L, the one provided closest to the contact point P may satisfy the above range.

  The cleaning liquid injection port 32c provided at the deep position L is provided on both the first side surface part 32a and the second side surface part 32b as shown in FIG. Although the cleaning effect of the portion can be enhanced, it may be provided on any one of them.

  In addition, the jetting direction of the cleaning liquid jetted from the cleaning liquid jet port 32c does not need to be the same for all of the plurality of wafer guides 32 (four in FIG. 3). For example, as shown in FIG. 3, when the semiconductor wafer W is supported upright in the slot S and viewed from a direction perpendicular to the main surface of the semiconductor wafer W, two wafer guides 32 on the left side and two wafer guides 32 on the right side By making the jetting direction of the cleaning liquid jetted from the cleaning liquid jetting port 32c symmetrical, the effect of suppressing the rotation of the semiconductor wafer 32 can be enhanced. Further, the number of wafer guides 32 is not limited to four as shown in FIG. 3, but may be two, three, five or more.

The cleaning liquid injection port 32c provided at the deep position L is provided at the deep position L when viewed from a direction perpendicular to the main surface of the semiconductor wafer W in a state where the semiconductor wafer W is supported upright in the slot S. jetting direction D _l of the washing liquid from the washing liquid injection port 32c has is preferably configured to be perpendicular to the straight line l passing through the center of the cleaning liquid injection port 32c and the semiconductor wafer W. Thereby, the cleaning effect of the portion near the end face of the semiconductor wafer W can be enhanced, and the semiconductor wafer W can be prevented from being lifted by the cleaning liquid from the cleaning liquid injection port 32c provided at the deep position L.

  As the material of the tank body 11 and the wafer guide 32, any appropriate material that is resistant to the cleaning liquid and does not cause contamination of the semiconductor wafer W can be used. In addition, the cross-sectional shape and depth of the slit S, the diameter of the cleaning liquid injection port 32c, and the like can be appropriately set.

  Thus, by providing the cleaning liquid injection ports 32c on the first side surface portion 32a and the second side surface portion 32b that define the slot S, the peripheral portion of the semiconductor wafer W can be more uniformly cleaned.

(Semiconductor wafer cleaning method)
Next, a method for cleaning a semiconductor wafer according to the present invention will be described. A semiconductor wafer cleaning method according to the present invention is characterized in that a plurality of semiconductor wafers are cleaned using the above-described semiconductor wafer cleaning tank according to the present invention.

  As described above, the semiconductor wafer cleaning tank according to the present invention includes the wafer guide 32 disposed inside the tank main body 11 and the first side surface part 32a and the second side part 32a that define the slot S provided on the surface thereof. Each of the side surfaces 32b has an ejection port for ejecting the cleaning liquid. Therefore, by cleaning the semiconductor wafer using the semiconductor wafer cleaning bath according to the present invention, the semiconductor wafer W and the first side surface portion existing in the cleaning bath 200 described in Patent Document 2 shown in FIG. The dead zone D between the semiconductor wafer W and the second side surface 32b can be eliminated, and the peripheral portion of the semiconductor wafer W can be more uniformly cleaned.

  Although the semiconductor wafer W to be cleaned is not particularly limited, the silicon wafer can be suitably cleaned. In addition, although etching cleaning can be performed using an acid or alkali etching solution as a cleaning solution, it is preferable to perform only rinsing of the semiconductor wafer W after etching using pure water as a cleaning solution.

  That is, when the cleaning tank 1 according to the present invention is used as a cleaning tank in which an oxidation-reduction reaction occurs simultaneously, the flow of the cleaning liquid in the vicinity of the cleaning liquid injection port 32 is increased, so that local etching proceeds and surface roughness is increased. May occur. In this regard, when the cleaning tank 1 according to the present invention is used only as a rinsing tank after etching or the like, the above-described phenomenon does not occur, and the particle removing ability can be improved, which is preferable.

  According to the present invention, the peripheral portion of a semiconductor wafer can be more uniformly cleaned, which is useful in the semiconductor wafer manufacturing industry.

1,100 Cleaning tank 11 Tank main body 12, 22, 32 Wafer guides 12a, 22a, 32a First side surface parts 12b, 22b, 32b Second side surface parts 22d, 32c Cleaning liquid injection port 13 Cleaning liquid supply part 22c Convex part 32d Cleaning liquid Channel C Center of semiconductor wafer D Dead zone P Contact point S Slot W Semiconductor wafer

Claims (8)

A semiconductor wafer cleaning tank for immersing a plurality of semiconductor wafers in a cleaning liquid to wash the semiconductor wafer, the tank body having an opening at an upper portion, accommodating the plurality of semiconductor wafers and storing the cleaning liquid, and A plurality of wafer guides provided on a surface thereof, the plurality of slots being partitioned by a first side surface and a second side surface, and a plurality of slots for vertically supporting the semiconductor wafer are provided on the surface, and the cleaning liquid is supplied from an opening of the tank main body. In a semiconductor wafer cleaning tank for cleaning the plurality of semiconductor wafers while overflowing,
Each of the first side surface portion and the second side surface portion is provided with a cleaning liquid ejection port for injecting the cleaning liquid ,
The jet direction of the cleaning liquid jetted from the cleaning liquid jet port of the first side surface portion and the jet direction of the cleaning liquid jetted from the cleaning liquid jet port of the second side face are such that the semiconductor wafer stands upright in the slot. The center of the semiconductor wafer, the contact point between the semiconductor wafer and the first side surface, and the semiconductor wafer and the second A semiconductor wafer cleaning tank characterized by being opposite to each other with respect to a plane including a contact point with a side surface portion and perpendicular to a main surface of the semiconductor wafer.   The cleaning liquid injection port, when viewed from a direction perpendicular to the main surface of the semiconductor wafer in a state where the semiconductor wafer is supported upright in the slot, the injection direction of the cleaning liquid injected from the cleaning liquid injection port, 2. The semiconductor wafer cleaning tank according to claim 1, wherein the cleaning tank is configured to be inclined with respect to a direction from the cleaning liquid injection port toward the center of the semiconductor wafer. 3. For each of the first side surface portion and the second side surface portion, the cleaning liquid injection port is provided at both a deep position and a shallow position in a depth direction of the slot from a contact point that contacts the semiconductor wafer. It is, the cleaning tank of the semiconductor wafer according to claim 1 or 2. The cleaning liquid injection port provided at the deep position is provided with the cleaning liquid provided at the deep position when viewed from a direction perpendicular to the main surface of the semiconductor wafer in a state where the semiconductor wafer is supported upright in the slot. 4. The semiconductor wafer cleaning tank according to claim 3 , wherein the direction of spraying the cleaning liquid from the injection port is perpendicular to a straight line passing through the cleaning liquid injection port and the center of the semiconductor wafer. The position of the cleaning liquid injection port provided on the first side surface portion is such that when the semiconductor wafer is viewed from a direction perpendicular to the main surface of the semiconductor wafer in a state where the semiconductor wafer is supported upright in the slot, The semiconductor wafer cleaning tank according to any one of claims 1 to 4 , wherein the position is different from a position of a cleaning liquid injection port provided on a side surface of the semiconductor wafer. It said plurality of further comprising from under the semiconductor wafer cleaning liquid supply part for supplying the cleaning liquid, cleaning tank semiconductor wafer according to any one of claims 1-5. The method for cleaning a semiconductor wafer, comprising washing a plurality of semiconductor wafers using a cleaning tank for semiconductor wafer according to any one of claims 1-6. The method for cleaning a semiconductor wafer according to claim 7 , wherein only the rinsing of the plurality of semiconductor wafers is performed using pure water as the cleaning liquid.

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