KR20170058070A - Substrate cleaning module for inspection apparatus and probe station having the same - Google Patents

Substrate cleaning module for inspection apparatus and probe station having the same Download PDF

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Publication number
KR20170058070A
KR20170058070A KR1020150161817A KR20150161817A KR20170058070A KR 20170058070 A KR20170058070 A KR 20170058070A KR 1020150161817 A KR1020150161817 A KR 1020150161817A KR 20150161817 A KR20150161817 A KR 20150161817A KR 20170058070 A KR20170058070 A KR 20170058070A
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South Korea
Prior art keywords
wafer
substrate
cleaning
unit
module
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KR1020150161817A
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Korean (ko)
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이용환
권덕성
박필규
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세메스 주식회사
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Priority to KR1020150161817A priority Critical patent/KR20170058070A/en
Publication of KR20170058070A publication Critical patent/KR20170058070A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A substrate cleaning module for an inspection apparatus for cleaning a wafer is disclosed. The substrate cleaning module may include a substrate supporting portion, a light source portion, a photographing unit, and a cleaning unit. The substrate support supports the end of the wafer to fix the wafer and the light source irradiates the laser slit beam in a horizontal direction with respect to the surface of the wafer so that the laser slit beam is adjacent to the surface of the wafer exposed through the lower portion of the substrate support . The photographing unit picks up the surface of the exposed wafer through the lower portion of the substrate support to detect the protruding foreign matter on the wafer surface. The cleaning unit ejects dry ice particles onto the surface of the wafer to remove foreign matter. As described above, since the wafer is cleaned before the inspection process of the substrate cleaning module, it is possible to prevent the wafer from being damaged due to the foreign matter on the bottom surface of the wafer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate cleaning module for a substrate inspection apparatus,

Embodiments of the present invention relate to a substrate cleaning module for an inspection apparatus and a probe station including the substrate cleaning module. And more particularly, to a substrate cleaning module for an inspection apparatus for cleaning a wafer to perform electrical inspection on a wafer on which semiconductor elements are formed using a probe card, and a probe station having the same.

Generally, semiconductor devices, such as integrated circuit devices, can be formed by repeatedly performing a series of semiconductor processes on a semiconductor wafer. For example, a deposition process for forming a thin film on a wafer, an etching process for forming the thin film into patterns having electrical characteristics, an ion implantation process or diffusion process for implanting or diffusing impurities into the patterns, The semiconductor circuit elements can be formed on the wafer by repeatedly performing a cleaning and rinsing process to remove impurities from the wafer.

An inspection process for inspecting the electrical characteristics of the semiconductor devices after forming the semiconductor devices through such a series of processes can be performed. The inspection process may be performed by a probe station including a probe card having a plurality of probes and a tester connected to the probe card to provide an electrical signal.

For the inspection process, a probe card may be mounted on the upper part of the inspection chamber, and a wafer chuck supporting the wafer may be disposed below the probe card. The wafer is seated on the upper surface of the wafer chuck, and the wafer chuck can fix the wafer using vacuum pressure. At this time, if there is a foreign object protruding from the lower surface of the wafer, stress may be generated in the portion where the foreign substance is present and the wafer may be damaged, and the upper surface of the wafer chuck may be contaminated and damaged by the foreign substance. In addition, since the overdrive amount of the probes of the probe card is larger than the predetermined overdrive amount at the portion where the foreign matter is present, the probe can be broken.

Embodiments of the present invention provide a substrate cleaning module for an inspection apparatus capable of efficiently removing foreign matter adhering to a surface of a wafer to be charged in an inspection process.

In addition, embodiments of the present invention provide a probe station that includes the above-described substrate cleaning module and is capable of preventing breakage of the wafer caused in the inspection process due to foreign matter on the bottom surface of the wafer.

According to embodiments of the present invention for achieving the above object, a substrate cleaning module for an inspection apparatus includes a substrate supporting portion for supporting an end portion of the wafer on which a waiting wafer is placed for inspection, A light source section for irradiating the surface of the wafer with a laser slit beam in a horizontal direction and irradiating the laser slit beam adjacent to a surface of the wafer exposed through a lower portion of the substrate support section; An image pickup unit for picking up a surface of the wafer exposed through a lower portion of the substrate support to detect protruding foreign substances on the surface of the wafer, and a controller, disposed under the substrate support, for spraying dry ice particles on the surface of the wafer And a cleaning unit for removing the foreign matter.

According to the embodiments of the present invention, the photographing unit may include a camera provided movably in the vertical and horizontal directions with respect to the surface of the wafer, and which images the surface of the wafer in a dark field state.

According to embodiments of the present invention, the cleaning unit may include a first cleaning unit for spraying the dry ice particles onto the surface of the wafer to remove the foreign matter, and a second cleaning unit for spraying ultrapure water or air onto the surface of the wafer, And a second cleaner for removing the second cleaner.

According to embodiments of the present invention, a probe station includes a probe card for inspecting electrical characteristics of a wafer and a wafer chuck disposed under the probe card and supporting the wafer, A substrate storage module for storing a plurality of wafers which are positioned adjacent to the inspection module and provided for the inspection module, a substrate storage module positioned adjacent to the inspection module, A substrate cleaning module for cleaning the wafer, and a substrate transfer module for transferring the wafer from the substrate storage module to the substrate cleaning module and for transferring the wafer cleaned in the substrate cleaning module to the inspection module. The substrate cleaning module further includes a substrate supporting part on which the wafer is mounted and which supports an end of the wafer, a laser beam splitter arranged on a lower surface of the substrate supporting part and irradiating a laser slit beam in a horizontal direction with respect to the lower surface of the wafer, Which is exposed through a lower portion of the substrate support to detect a protruding foreign object on the lower surface of the wafer, a light source unit for irradiating the substrate support to the wafer support, And a cleaning unit disposed below the substrate supporting unit for spraying dry ice particles on the lower surface of the wafer to remove the foreign substances.

According to embodiments of the present invention, the substrate cleaning module may further include a buffer part disposed at one side of the substrate supporting part and temporarily storing the wafers to be charged into the inspection module.

According to embodiments of the present invention as described above, the substrate cleaning module for an inspection apparatus and the probe station having the same can be provided with a substrate cleaning module for cleaning a wafer, thereby cleaning the wafer and providing the wafer to the inspection module. Accordingly, the probe station can prevent damage to the wafer due to foreign substances on the lower surface of the wafer, contamination and damage of the wafer chuck, and prevent probes of the probe card from being damaged at the inspection process step.

Since the substrate cleaning module cleans the wafer using dry ice particles, the cleaning efficiency can be improved while minimizing the amount of the cleaning fluid used.

Further, since the substrate cleaning module captures the wafer in the dark field state, the size of the image data can be minimized, and the protruding foreign substance can be detected more efficiently than in the bright field state.

In addition, since the substrate cleaning module includes the buffer portion for temporary storage of the wafers, the waiting and cleaning of wafers can be performed in one space without having to separately provide a buffer space for waiting for wafers and a cleaning space for cleaning . Thus, the probe station can clean the wafers without increasing the area of the existing equipment, and the cleaning process can be performed while the wafers are waiting, so that the wafers can be cleaned without increasing the processing time.

1 is a schematic block diagram illustrating a probe station according to an embodiment of the present invention.
FIG. 2 is a schematic configuration diagram for explaining the inspection module shown in FIG. 1. FIG.
3 is a schematic plan view for explaining the substrate cleaning module shown in FIG.
4 is a schematic configuration diagram for explaining the substrate cleaning module shown in FIG. 3,
5 is a side view for explaining a process of picking up a bottom surface of a wafer shown in FIG.
FIG. 6 is a side view for explaining a process of removing foreign matters from the bottom surface of the wafer by the cleaning unit shown in FIG. 4;

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention should not be construed as limited to the embodiments described below, but may be embodied in various other forms. The following examples are provided so that those skilled in the art can fully understand the scope of the present invention, rather than being provided so as to enable the present invention to be fully completed.

In the embodiments of the present invention, when one element is described as being placed on or connected to another element, the element may be disposed or connected directly to the other element, . Alternatively, if one element is described as being placed directly on another element or connected, there can be no other element between them. The terms first, second, third, etc. may be used to describe various items such as various elements, compositions, regions, layers and / or portions, but the items are not limited by these terms .

The terminology used in the embodiments of the present invention is used for the purpose of describing specific embodiments only, and is not intended to be limiting of the present invention. Furthermore, all terms including technical and scientific terms have the same meaning as will be understood by those skilled in the art having ordinary skill in the art, unless otherwise specified. These terms, such as those defined in conventional dictionaries, shall be construed to have meanings consistent with their meanings in the context of the related art and the description of the present invention, and are to be interpreted as being ideally or externally grossly intuitive It will not be interpreted.

Embodiments of the present invention are described with reference to schematic illustrations of ideal embodiments of the present invention. Thus, changes from the shapes of the illustrations, e.g., changes in manufacturing methods and / or tolerances, are those that can be reasonably expected. Accordingly, the embodiments of the present invention should not be construed as being limited to the specific shapes of the regions described in the drawings, but include deviations in the shapes, and the elements described in the drawings are entirely schematic and their shapes Is not intended to describe the exact shape of the elements and is not intended to limit the scope of the invention.

FIG. 1 is a schematic diagram for explaining a probe station according to an embodiment of the present invention, and FIG. 2 is a schematic diagram for explaining a probe module shown in FIG.

Referring to FIGS. 1 and 2, a probe station 500 according to an exemplary embodiment of the present invention performs an electrical characteristic inspection using a probe card 20 with respect to a wafer 10 on which semiconductor devices are formed. The probe station 500 includes an inspection module 100 for checking electrical characteristics of the wafer 10, a substrate storage module 200 for storing a plurality of wafers 10, A substrate cleaning module 300 for cleaning the wafer 10 to be charged, and a substrate transfer module 400 for transferring the wafer 10.

2, the inspection module 100 includes an inspection chamber 110, a wafer chuck 120, a rotation driving unit 130, a vertical driving unit 140, a substrate stage 150, and a horizontal driving unit 160, .

The wafer chuck 120 and the probe card 20 are disposed in the inspection chamber 110. The wafer chuck 120 and the probe card 20 are mounted on the inspection chamber 110. The inspection chamber 110 is provided with a process space for performing an electrical inspection on the wafer 10, .

The wafer chuck 120 has a generally columnar shape, and the wafer 10 is seated on an upper surface thereof. Although not shown in detail in the drawing, the wafer chuck 120 can fix the wafer 10 to the upper surface by using a vacuum pressure.

The wafer chuck 120 may be disposed under the wafer chuck 120 and the wafer chuck 120 may be vertically disposed under the rotation driving unit 130. [ The vertical driving unit 140 may be disposed. The vertical driving unit 140 may be disposed on the upper surface of the substrate stage 150 and the substrate stage 150 may be coupled to the upper portion of the horizontal driving unit 160. The horizontal driving unit 160 may move the substrate stage 150 in a horizontal direction. Here, the arrangement relationship of the vertical driving unit 140 and the horizontal driving unit 160 may be variously changed, so that the scope of the present invention is not limited thereto.

The wafer chuck 120 may be aligned by the rotation driving unit 130, the vertical driving unit 140, and the horizontal driving unit 160. That is, the vertical driving unit 140 and the horizontal driving unit 160 move the wafer chuck 120 vertically and horizontally, and the rotation driving unit 130 rotates the wafer chuck 120 to rotate the probe card 20 The probe card 20 and the wafer 10 can be aligned by adjusting the position of the pads on the wafer 10 with respect to the probes 22 of the probe card 20.

The probe card 20 may be disposed on the wafer chuck 120. The probe card 20 includes probes 22 for applying an inspection signal and the probes 22 contact the inspection pads on the wafer 10 to apply an inspection signal. Here, the inspection module 100 may be connected to a tester 30 for checking electrical characteristics of the wafer 10. The tester 30 applies the inspection signal to the semiconductor devices through the probe card 20 and inspects the electrical characteristics of the wafer 10 through signals output from the semiconductor devices.

The inspection module 100 according to an embodiment of the present invention includes a lower alignment camera 172 disposed on one side of the wafer chuck 120 and a lower alignment camera 172 disposed on one side of the probe card 20 174).

The lower alignment camera 172 is disposed on the substrate stage 150 and is movable with the wafer chuck 120 to obtain an image of the probes 22 of the probe card 20 . The upper alignment camera 174 may be disposed above the chuck 120 to obtain an image of the patterns on the wafer 10. Although not shown in detail in the drawing, the upper alignment camera 174 can be moved horizontally by a driving unit having a bridge shape. In particular, the lower and upper alignment cameras 172, 174 may be used for alignment of the wafer 10 and the probe card 20.

The substrate storage module 200, the substrate cleaning module 300, and the substrate transfer module 400 may be disposed on one side of the inspection module 100. The substrate storage module 200 houses a plurality of wafers 10 to be provided to the inspection module 100. The substrate cleaning module 300 cleans the wafer 10 transferred from the substrate storage module 200 and the wafer 10 cleaned by the substrate cleaning module 300 is provided to the inspection module 100 . The substrate transfer module 400 may be disposed between the substrate storage module 200 and the substrate cleaning module 300 and may include a transfer robot 410 for transferring the wafer 10. The transfer robot 410 transfers the wafer 10 from the substrate storage module 200 to the substrate cleaning module 300 and transfers the wafer 10 cleaned by the substrate cleaning module 300 to the inspection module 300. [ (100). ≪ / RTI >

Hereinafter, the structure of the substrate cleaning module 300 will be described in detail with reference to the drawings.

FIG. 3 is a schematic plan view for explaining the substrate cleaning module shown in FIG. 1, and FIG. 4 is a schematic structural view for explaining the substrate cleaning module shown in FIG.

3 and 4, a substrate cleaning module 300 according to an embodiment of the present invention includes a cleaning chamber 310 for providing a space in which a cleaning process of the wafer 10 is performed, A light source unit 330 for irradiating light, a photographing unit 340 for photographing the surface of the wafer 10, and a cleaning unit 350 for cleaning the wafer 10, .

In particular, the substrate support 320 may be disposed in the cleaning chamber 310 and may support the end of the wafer 10. The lower surface 11 of the wafer 10 is only seated on the substrate supporting portion 320 and the remaining portion except the portion supported by the substrate supporting portion 320 is exposed through the lower portion of the substrate supporting portion 320 . In one embodiment of the present invention, the substrate support 320 may be provided in a ring shape to expose the lower surface 11 of the wafer 10. [

The light source unit 330 may be disposed on a lower surface of the substrate support unit 320. The light source unit 330 may irradiate a laser slit beam in a horizontal direction with respect to a lower surface 11 of the wafer 10 exposed through a lower portion of the substrate support unit 320, 10). ≪ / RTI >

The photographing unit 340 is disposed below the substrate supporting part 320 and detects the presence of the wafer W exposed through the lower part of the substrate supporting part 320 in order to detect foreign substances located on the lower surface 11 of the wafer 10. [ And a camera 342 for capturing an image of the lower surface 11 of the camera 10. The camera 342 can be vertically and horizontally movably provided and can capture the bottom surface 11 of the wafer 10 in a dark field state using the laser slit beam. When the camera (342) photographs the bottom surface (11) of the wafer (10) in the dark field state, foreign substances located on the bottom surface (11) of the wafer (10) The foreign substance can be efficiently picked up.

In one embodiment of the present invention, the photographing unit 340 may further include a vertical driving unit 344 disposed under the camera 342. [ The vertical driving unit 344 can vertically move the camera 342 so that the vertical distance between the camera 342 and the wafer 10 can be adjusted.

The cleaning unit 350 may be provided at one side of the photographing unit 340 to remove the foreign substances adhering to the surface of the wafer 10. [ The cleaning unit 350 may be disposed below the substrate support 320 and may be configured to spray dry ice particles on the lower surface 11 of the wafer 10 exposed through the lower portion of the substrate support 320 And may include a first stylus 352.

The first cleaner 352 injects the dry ice particles toward the lower surface 11 of the wafer 10 and the dry ice particles are bonded to the foreign matter of the lower surface 11 of the wafer 10, So that foreign matter can be separated from the lower surface 11 of the wafer 10. The dry ice particles combined with the foreign substances are vaporized in air, and the foreign substances can be discharged to the outside through a vacuum line (not shown) connected to the cleaning chamber 310. Since the cleaning unit 350 cleans the wafer 10 using the dry ice particles, the cleaning rate can be improved while minimizing the amount of the cleaning fluid used by the DI water or air cleaning method , It is easy to discharge the used cleaning fluid and the foreign matter.

The cleaning unit 350 may further include a second cleaning unit 354 for spraying ultrapure water or air to the lower surface 11 of the wafer 10 to remove the foreign substances. The cleaning unit 350 may remove the foreign matter by using the first cleaning part 352 and may remove the foreign matter by using the second cleaning part 354 as necessary.

The photographing unit 340 and the cleaning unit 350 may be disposed on the upper surface of the cleaning stage 360 and the cleaning stage 360 may be coupled to the horizontal driving unit 370. The horizontal driving unit 370 moves the cleaning stage 360 in a horizontal direction and the horizontal position of the photographing unit 340 and the cleaning unit 350 can be adjusted by driving the horizontal driving unit 370 have. In addition, the photographing unit 340 may image the bottom surface 11 of the wafer 10 while moving in the horizontal direction by the horizontal driving unit 370.

Here, the light source unit 330, the photographing unit 340, the cleaning unit 350, and the horizontal driving unit 370 may be controlled by a control unit 380, The foreign substance adhered to the wafer 10 can be recognized through the image generated in the image forming unit 340.

Hereinafter, the process of cleaning the wafer 10 by the substrate cleaning module 300 will be described in detail with reference to the drawings.

FIG. 5 is a side view for explaining a process of picking up a bottom surface of a wafer shown in FIG. 4, and FIG. 6 is a side view for explaining a process of removing foreign substances on a bottom surface of the wafer by the cleaning unit shown in FIG.

5, the light source unit 330 irradiates the laser slit beam LSB in a direction parallel to the lower surface 11 of the wafer 10, as shown in FIG. 5, The camera 342 picks up the bottom surface 11 of the wafer 10 in the dark field state using the laser slit beam LSB. At this time, the laser slit beam LSB is irradiated adjacent to the lower surface 11 of the wafer 10, and the camera 342 moves horizontally by the horizontal driving unit 370 (see FIG. 4) The lower surface 11 of the wafer 10 can be picked up.

The control unit 380 can determine whether a foreign object 40 protruding from the lower surface 11 of the wafer 10 exists through the image generated by the camera 342. [

6, the cleaning unit 350 is moved to the lower surface 11 of the wafer 10 by the dry ice (not shown) so that the foreign matter 40 is present on the lower surface 11 of the wafer 10. [ Particles (DIP). As a result, the foreign substance 40 on the lower surface 11 of the wafer 10 is removed.

The step of spraying and cleaning the dry ice particles (DIP) on the lower surface 11 of the wafer 10 by the cleaning unit 350 may be performed by the imaging unit 340 on the lower surface of the wafer 10 11 may be performed before the image pickup step of detecting the foreign matter 40 to pick up the bottom surface 11 of the wafer 10, and after the primary cleaning step, When the foreign substance 40 is detected, the cleaning unit 350 can clean the lower surface 11 of the wafer 10 secondarily.

Also, although not shown, the substrate cleaning module 300 can clean the upper surface of the wafer 10 through the process described above. When the upper surface of the wafer 10 is cleaned, the transfer robot 410 (See Fig. 1), the wafer 10 can be turned upside down.

1 and 3, the wafer 10 may be transferred to the inspection module 100 by the transfer robot 410 after being cleaned in the substrate cleaning module 300 as described above have. As the wafer 10 is cleaned in the substrate cleaning module 300 and then provided to the inspection module 100, the wafer 10 may be removed from the inspection module 100 due to foreign substances on the lower surface 11 It is possible to prevent defects such as breakage of the wafer 10, for example.

The substrate cleaning module 300 may further include a buffer unit 390 for temporarily storing a plurality of wafers 10 and the buffer unit 390 may be disposed in the cleaning chamber 310 have. The transfer robot 410 takes out the wafers 10 from the substrate storage module 200 and temporarily stores the wafers 10 into the buffer unit 390 and transfers the wafers 10 temporarily stored in the buffer unit 390 May be cleaned by the cleaning unit 350 (see FIG. 4) and then transferred to the inspection module 100.

As described above, the probe station 500 includes the substrate cleaning module 300 to clean the surface of the wafer 10 and provide the cleaning module to the inspection module 100. Accordingly, the probe station 500 can prevent the wafer 10 from being damaged due to stress generated due to foreign substances on the lower surface of the wafer 10 during the inspection process. 2) due to the foreign object and the breakage of the probe card 20 (see FIG. 2) probes 22 (see FIG. 2) .

In addition, since the substrate cleaning module 300 cleans the wafer 10 using dry ice particles, the cleaning efficiency can be improved while minimizing the amount of the cleaning fluid used. In addition, since the substrate cleaning module 300 captures the wafer 10 in the dark field state, it is possible to more easily detect the protruding foreign matter while minimizing the size of the image data, rather than picking up the image in the bright field state can do.

The substrate cleaning module 300 may include a buffer unit 390 for temporarily storing the wafers 10 in the cleaning chamber 310 so that a buffer space for waiting the wafers 10 Both the cleaning and the waiting of the wafer 10 can be performed in the cleaning chamber 310 without separately providing a cleaning space for cleaning. Accordingly, the probe station 500 can clean the wafers 10 without increasing the area of the apparatus. In addition, since the cleaning process can be performed while the wafers 10 are waiting in the substrate cleaning module 300, the wafers 10 can be cleaned without increasing the processing time.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined in the following claims. It can be understood that.

100: inspection module 110: inspection chamber
120: wafer chuck 130: rotation driving part
140: vertical driving part 150: substrate stage
160: horizontal driver 172, 174: alignment camera
200: substrate storage module 300: substrate cleaning module
310: Cleaning chamber 320:
330: light source unit 340: photographing unit
350: Cleaning unit 390: Buffer unit
400: substrate transfer module 500: probe station

Claims (6)

A substrate support for seating a waiting wafer for an inspection process and supporting an end of the wafer;
A light source unit disposed on a lower surface of the substrate supporting unit for irradiating the surface of the wafer with a laser slit beam in a horizontal direction and irradiating the laser slit beam adjacent to a surface of the wafer exposed through a lower portion of the substrate supporting unit;
An imaging unit disposed below the substrate supporting unit for imaging a surface of the wafer exposed through a lower portion of the substrate supporting unit to detect a protruding foreign substance on the wafer surface; And
And a cleaning unit disposed below the substrate supporting unit to remove foreign substances by spraying dry ice particles on the surface of the wafer. The method according to claim 1,
The photographing unit,
And a camera provided so as to be movable in the vertical and horizontal directions with respect to the surface of the wafer and to image the surface of the wafer in a dark field state. 3. The method of claim 2,
The cleaning unit includes:
A first cleaning unit for spraying the dry ice particles on the surface of the wafer to remove the foreign substances; And
And a second cleaner for removing the foreign substances by spraying ultrapure water or air onto the surface of the wafer. A probe card for inspecting an electrical characteristic of a wafer, and a wafer chuck disposed under the probe card and supporting the wafer, the inspection module performing an electrical characteristic test on the wafer;
A substrate storage module positioned adjacent to the inspection module and storing a plurality of wafers to be provided to the inspection module;
A substrate cleaning module positioned adjacent to the inspection module and cleaning the wafer to be charged in the inspection module; And
And a substrate transfer module for transferring the wafer from the substrate storage module to the substrate cleaning module and for transferring the wafer cleaned in the substrate cleaning module to the inspection module,
The substrate cleaning module includes:
A substrate support on which the wafer is mounted and which supports an end of the wafer;
A light source unit disposed on a lower surface of the substrate supporting unit for irradiating a laser slit beam in a horizontal direction with respect to a lower surface of the wafer and irradiating the laser slit beam adjacent to a lower surface of the wafer exposed through a lower portion of the substrate supporting unit;
An imaging unit disposed below the substrate supporting unit for imaging a lower surface of the wafer exposed through a lower portion of the substrate supporting unit to detect a protruding foreign object on the lower surface of the wafer; And
And a cleaning unit disposed below the substrate supporting part and for spraying dry ice particles on the lower surface of the wafer to remove the foreign matter. The method of claim 3,
The photographing unit,
And a camera movable in vertical and horizontal directions with respect to the lower surface of the wafer and configured to capture a lower surface of the wafer in a dark field state. 5. The method of claim 4,
The substrate cleaning module includes:
Further comprising a buffer unit disposed at one side of the substrate support unit and temporarily storing the wafers to be charged into the inspection module.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101995688B1 (en) * 2019-02-14 2019-07-02 이선수 Debris removal device for semiconductor equipment parts
CN113172048A (en) * 2021-04-28 2021-07-27 浙江工业大学 Method and device for synchronously detecting removal of pulse laser induced shock wave particles

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101995688B1 (en) * 2019-02-14 2019-07-02 이선수 Debris removal device for semiconductor equipment parts
CN113172048A (en) * 2021-04-28 2021-07-27 浙江工业大学 Method and device for synchronously detecting removal of pulse laser induced shock wave particles

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