KR20120129302A - Wafer defect high speed inspection apparatus - Google Patents

Wafer defect high speed inspection apparatus Download PDF

Info

Publication number
KR20120129302A
KR20120129302A KR1020110047470A KR20110047470A KR20120129302A KR 20120129302 A KR20120129302 A KR 20120129302A KR 1020110047470 A KR1020110047470 A KR 1020110047470A KR 20110047470 A KR20110047470 A KR 20110047470A KR 20120129302 A KR20120129302 A KR 20120129302A
Authority
KR
South Korea
Prior art keywords
wafer
height information
measuring unit
unit
image
Prior art date
Application number
KR1020110047470A
Other languages
Korean (ko)
Inventor
안두백
윤두현
Original Assignee
에이티아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이티아이 주식회사 filed Critical 에이티아이 주식회사
Priority to KR1020110047470A priority Critical patent/KR20120129302A/en
Publication of KR20120129302A publication Critical patent/KR20120129302A/en

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE: A wafer defect high speed inspection apparatus is provided to improve detection resolving power by obtain high-definition image at high speed. CONSTITUTION: A first measuring unit(110) detects a height of wafer. The first measuring unit obtains information of the height of the detected wafer. A second measuring unit(120) obtain an image of the wafer. Information of the height of the obtained wafer is provided to the second measuring unit. An image of the wafer is focused by using the information of the height. [Reference numerals] (210) Height information storage; (220) Height information calculation unit(average); (310) Stage driving unit

Description

Wafer defect high speed inspection apparatus

The present invention relates to a high-speed wafer defect inspection apparatus, and to a wafer defect high-speed inspection apparatus that can be obtained by effectively focusing the wafer image after detecting the height information to inspect the defect generated on the wafer surface at high speed. will be.

Generally, a wafer is a thin film forming process for growing or adding a thin film of various materials to the wafer surface, a pattern forming process for selectively removing the thin film from the wafer, and a dopant is added to change resistance and conductivity of selected regions of the wafer. It goes through a machining process such as an injection process.

Manufacturing semiconductor devices such as logic and memory devices generally involves processing a substrate, such as a semiconductor wafer, using a large number of semiconductor manufacturing processes to form multiple levels and various features of the semiconductor devices. . For example, lithography is a semiconductor manufacturing process that involves transferring a pattern from a reticle to a resist arranged on a semiconductor wafer. Additional examples of semiconductor fabrication processors include, but are not limited to, chemical-mechanical polishing (CMP), etching, deposition, and ion implantation. Multiple semiconductor devices can be fabricated by being arranged on a single semiconductor wafer and then separated into individual semiconductor devices.

Inspection processes are used at various stages during the semiconductor manufacturing process to detect defects on wafers to promote high yield and thus higher benefits in the manufacturing process. Inspection has always been an important part of manufacturing semiconductor devices such as ICs. However, as the dimensions of semiconductor devices decrease, inspection becomes more important to the successful manufacture of acceptable semiconductor devices because smaller defects can cause the devices to fail. For example, as dimensions of semiconductor devices decrease, the detection of defects of decreasing size has become essential, because even relatively small defects can cause unwanted deformations in the semiconductor devices.

As design rules shrink, semiconductor manufacturing processes may also be operating closer to the performance capability limitations of these processes. In addition, in some cases in smaller design rules, the process causing the failure tends to be organized. That is, a faulty process tends to fail in predetermined design patterns that are often repeated many times within the design. The detection and removal of spatially organized and electrically related defects is important because removing such defects has a fairly comprehensive effect on yield. In this case, the defect is inspected for defects such as damage on the surface of the wafer, adhesion of dust, cracks, stains, stains, and the like, and the defect type of the wafer is determined and classified according to the defect information found through the inspection.

Therefore, the speed of inspection equipment for detecting defects on the surface of the wafer is urgently needed in accordance with the rapid development of semiconductor wafer manufacturing technology, high integration, and increasing demand for semiconductors.

The present invention for solving the above problems solves the disadvantage that the image acquisition time is long by performing the focusing (focusing) for each area of the wafer and acquires the image for the camera for image acquisition provided in the existing inspection apparatus The purpose of the present invention is to provide a wafer inspection apparatus capable of acquiring an image at high speed by separately performing a height information measuring process for focusing and a process for acquiring an image, and focusing using the acquired height information.

The present invention for achieving the above object is an inspection apparatus for inspecting a defect on the surface of the wafer, the inspection apparatus, the first measuring unit for detecting the height of the wafer and the second measurement for obtaining an image of the wafer And a second measuring unit providing the wafer height information measured by the first measuring unit, wherein the wafer height information is an average value of height information of an area acquired by the second measuring unit at one time. The second measurement unit may be obtained by focusing a wafer image based on the average value.

In the wafer defect fast inspection apparatus, the height information may provide an average value of height information of an area acquired by the second measurement unit at one time, and the second measurement unit may focus on a wafer image through the average value. It is characterized by obtaining.

The first measuring unit may measure the height of the wafer by line scan using a cylinder lens.

The second measuring unit may be provided as an area scan camera or a line scan camera.

In addition, the inspection apparatus obtains height information for each area when the first measuring unit scans wafer height information, and when the second measuring unit scans to obtain wafer image information, each inspection unit obtains image information. It is characterized in that the average value of the height information corresponding to the area is provided.

The inspection apparatus may further include, in the height information storage unit, a height information storage unit for storing height information of each area of the wafer acquired by the first measurement unit, and an average value of height information for the area obtained by the second measurement unit. It is characterized in that it comprises a height information calculation unit for receiving and calculating to provide an average value of the acquisition area.

The inspection apparatus may provide the height information detected through the first measuring unit to the auto focusing unit, and the auto focusing unit focuses the second measuring unit to acquire a wafer image.

The present invention configured as described above is provided with a first measuring unit for detecting wafer height information and a second measuring unit for obtaining a wafer image for wafer defect detection, and detecting height information for an arbitrary region through the first measuring unit. By providing the detected height information to the second measuring unit, fast focusing can be performed through the height information, resulting in a high speed detection.

In addition, by providing the height information of the area as an average value according to the acquired image area of the camera composed of the second measuring unit, it is possible to precisely focus on each area, and to obtain a high quality image at high speed to improve detection resolution. There are advantages to it.

1 is a view showing a general wafer inspection apparatus according to the prior art,
2 is a schematic configuration diagram of a wafer defect high speed inspection apparatus according to the present invention;
3 is a view showing a region measured through a first measurement unit of the wafer defect high speed inspection apparatus according to the present invention,
4 is a schematic configuration diagram of a first measurement unit according to the present invention;
5 is a partially enlarged view of an area measured by the first measuring unit according to the present invention;
6 is a view showing a wafer image acquisition process through a second measurement unit according to the present invention.

Hereinafter, with reference to the accompanying drawings, a preferred embodiment of the wafer defect high speed inspection apparatus according to the present invention will be described in detail.

A wafer defect high speed inspection apparatus according to the present invention is an inspection apparatus for inspecting a defect on a wafer surface, the inspection apparatus comprising: a first measurement unit for detecting a height of the wafer and a second measurement for acquiring an image of the wafer And a second measuring unit providing the wafer height information measured by the first measuring unit, wherein the wafer height information is an average value of height information of an area acquired by the second measuring unit at one time. The second measurement unit may be obtained by focusing a wafer image based on the average value.

The wafer defect high speed inspection apparatus according to the present invention preferentially scans and detects height information through the first measuring unit 110 for detecting height information (height of the measuring unit and the camera) of the wafer W, where The acquired height information value is used as data for focusing of the second measuring unit 120 to acquire an image, and the inspection can quickly detect wafer defects by quickly obtaining a wafer image by fast focusing in the second measuring unit. Providing the device is a major technical point.

The wafer inspection apparatus includes a PC (terminal; 200) including a measuring unit for acquiring a wafer image and an image processing unit for processing an image acquired by the measuring unit, and an x, y axis, or z axis in a state where the wafer is placed. It is largely composed of a stage 300 for transferring the wafer and a stage driver 310 for precisely driving the stage. In addition, although not shown in the drawings, the cassette includes a cassette for waiting the wafer to be inspected and a robot handler for moving the wafer located on the cassette to the stage for inspection. Since the schematic components of such a wafer inspection apparatus are well-known techniques, it may be determined that they may obscure the subject matter of the present invention, and thus detailed descriptions thereof will be omitted.

2 is a schematic configuration diagram of a wafer defect high speed inspection apparatus according to the present invention. As shown in the measurement unit 100 of the present invention, the first measurement unit 110 and the second measurement unit 120 constitute a single measurement module, and the first measurement unit detects the height of the wafer and The second measuring unit corresponds to a measuring unit for obtaining a wafer image. In this case, as the second measuring unit focuses on the height information acquired by the first measuring unit, the first measuring unit and the second measuring unit are preferably located at the same distance from the wafer. Focusing should be performed through the height information value compensated by the distance.

The first measuring unit 110 for detecting height information is a non-contact measuring probe using optical, and preferably detects height information of a wafer in a line scan type. In brief, the configuration includes a light source 111 and a detector 114 that receives light that is emitted from the light source and then reflects back to the wafer, and calculates a position of light in an image obtained by the detector. The height information of the wafer is detected. This is because the distance difference between the wafer surface and the measurement unit may occur due to the physical warpage of the wafer and the warpage caused by the pressure of the vacuum chuck configured on the stage.

3 is a schematic configuration diagram of a first measurement unit according to the present invention. According to a preferred embodiment of the present invention, the first measurement unit detects height information in a line scan type using a cylinder lens. To this end, the light source 111, the cylinder lens 112, the mirror 113, and the detector 114, respectively. The light emitted from the light source irradiates the measurement light onto the wafer in a line type by the cylinder lens, and the measurement light reflected from the wafer is measured by the detector 114 through the mirror 113.

4 is a view showing a region measured through the first measurement unit of the high-speed wafer defect inspection apparatus according to the present invention, Figure 5 is a partially enlarged view of the region measured through the first measurement unit according to the present invention. The height information of the wafer area is detected in the line scan type of the areas A to E shown in FIG. 4 through the first measuring unit. In the enlarged portion of FIG. 5, the height information region may be divided in the scanning direction in the region A such as a, b, c, d, and e. The detected height information value is stored in the height information storage unit 210 of the PC 200 configured for image processing of the inspection apparatus. The height information stored in the height information calculation unit 220 calculates an average value of the height information of a certain wafer area and provides the average value to the second measurement unit, which will be described later.

After the height information is acquired by scanning the wafer through the first measuring unit, the height information value is provided as information for focusing the second measuring unit. Here, an auto focusing unit (AF unit) 130 for focusing the second measurement unit is provided, and focusing is controlled through the auto focusing unit.

The second measuring unit 120 acquires an image of a wafer and includes an image pickup device. That is, a wafer image is acquired by an image sensor (CCD or CMOS) camera.

When the second measuring unit acquires a wafer image, a height difference may occur between the measuring unit and the wafer for each region, and thus, focusing should be performed for each region. To this end, the second measurement unit performs focusing with the height information provided by the height information calculating unit to obtain a post-focusing image with the height information instead of focusing due to self detection.

Here, the height information value is provided differently according to the structure of the second measuring unit. The second measurement unit for acquiring an image may be configured as an area camera or a line scan camera. Since the image acquisition area is different due to camera characteristics, the second measurement unit determines the height information value according to the acquisition area. In the case of an area camera, for example, a camera composed of a 4 * 5, 6 * 4 array, etc. may be applied. In the case of a line scan camera, a camera in which a CCD sensor is arranged to acquire only one image pixel line is used. It is composed.

Therefore, in the present invention, there is a difference in the image acquisition area according to the CCD array structure, which is an important factor for focusing. This will be described in detail with reference to FIG. 6. 6 is a view illustrating a wafer image acquisition process through a second measurement unit according to the present invention. As shown, when the second measurement unit is configured as an area sensor camera, an acquisition area is determined, and the height information obtained by the first measurement unit is divided into areas (a, b, c, d, and e) within the area. . Here, the size of the image acquisition area of the second measurement unit corresponds to the a, b, c area (in the x-axis) of the height information area size, and the height information calculation unit calculates an average value of the height information for the a, b, c areas. Provided as focusing data.

The second drawing is a process in which the second measurement unit scans in the x-axis direction, and when the height is in the b, c, and d areas of the height information area, the average value of the height information in the b, c, and d areas is calculated and the focusing value of the second measurement unit is calculated. It will be used as. The third drawing likewise controls c, d, and e to be focused by providing an average value. Although not shown in the drawing, when the acquisition area of the second measurement unit has a, b zones, that is, average height information of a and b when the pixel size is small, the line scan camera is arranged as one line pixel, so Only height information is provided. Accordingly, by measuring the height information for focusing the second measuring unit in the first measuring unit and providing the average value through the height information calculating unit to obtain the focusing and image at high speed without a separate focusing process.

The present invention configured as described above enables fast focusing by using the first measurement unit for detecting height information for focusing and the focusing data for image acquisition using the height information acquired by the first measurement unit. There is an advantage that can obtain a clear picture quality at high speed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. On the contrary, those skilled in the art will appreciate that many modifications and variations of the present invention are possible without departing from the spirit and scope of the appended claims. And all such modifications and changes as fall within the scope of the present invention are therefore to be regarded as being within the scope of the present invention.

W: Wafer 100: Measuring Part
110: first measuring unit 111: light source
112: cylinder lens 113: mirror
114: detection unit 120: second measurement unit
130: auto focus unit 200: PC
210: height information storage unit 220: height information calculation unit
300: stage 310: stage driving unit

Claims (7)

In the inspection apparatus for inspecting defects on the wafer surface,
The inspection device,
A first measuring unit detecting height of the wafer to obtain height information; and
And a second measuring unit which acquires an image of the wafer.
And providing the wafer height information measured by the first measurement unit to a second measurement unit to obtain a wafer image by focusing the wafer image through the height information. According to claim 1, The wafer defect high speed inspection apparatus,
The height information provides an average value of the height information for the area obtained by the second measurement unit at a time, the second measurement unit is a high-speed wafer defect inspection apparatus characterized in that obtained by focusing the wafer image through the average value . The method of claim 1, wherein the first measuring unit,
Wafer defect high speed inspection apparatus, characterized in that for measuring the height of the wafer by a line scan using a cylinder lens. The method of claim 1, wherein the second measuring unit,
A wafer defect high speed inspection apparatus, comprising an area scan camera or a line scan camera. According to claim 1, wherein the inspection device,
When the first measuring unit acquires height information for each area when the wafer height information is scanned, and when the second measuring unit scans to obtain wafer image information, the height information corresponding to each area for image information acquisition is obtained. Wafer defect high speed inspection apparatus characterized by providing an average value. According to claim 1, wherein the inspection device,
A height information storage unit for storing height information of each area of the wafer obtained by the first measurement unit; and
And a height information calculating unit receiving the average value of the height information of the area obtained by the second measuring unit from the height information storage unit and calculating the average value of the area to obtain the average area. . The method of claim 1 or 6, wherein the inspection device,
And providing the height information detected through the first measuring unit to the auto focusing unit and focusing the auto focusing unit so that the second measuring unit acquires a wafer image.
KR1020110047470A 2011-05-19 2011-05-19 Wafer defect high speed inspection apparatus KR20120129302A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110047470A KR20120129302A (en) 2011-05-19 2011-05-19 Wafer defect high speed inspection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110047470A KR20120129302A (en) 2011-05-19 2011-05-19 Wafer defect high speed inspection apparatus

Publications (1)

Publication Number Publication Date
KR20120129302A true KR20120129302A (en) 2012-11-28

Family

ID=47513818

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110047470A KR20120129302A (en) 2011-05-19 2011-05-19 Wafer defect high speed inspection apparatus

Country Status (1)

Country Link
KR (1) KR20120129302A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108723617A (en) * 2017-04-24 2018-11-02 株式会社迪思科 Laser processing
CN108802046A (en) * 2018-06-01 2018-11-13 中国电子科技集团公司第三十八研究所 A kind of hydrid integrated circuit component defect optical detection apparatus and its detection method
CN111812099A (en) * 2020-06-30 2020-10-23 深圳中科飞测科技有限公司 Detection device and detection method
KR20230120283A (en) * 2022-02-09 2023-08-17 주식회사 에프에스티 Method and device for inspecting baseplate of a reticle pod

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108723617A (en) * 2017-04-24 2018-11-02 株式会社迪思科 Laser processing
CN108723617B (en) * 2017-04-24 2021-08-27 株式会社迪思科 Laser processing method
CN108802046A (en) * 2018-06-01 2018-11-13 中国电子科技集团公司第三十八研究所 A kind of hydrid integrated circuit component defect optical detection apparatus and its detection method
CN108802046B (en) * 2018-06-01 2021-01-29 中国电子科技集团公司第三十八研究所 Optical detection device and detection method for defects of hybrid integrated circuit assembly
CN111812099A (en) * 2020-06-30 2020-10-23 深圳中科飞测科技有限公司 Detection device and detection method
KR20230120283A (en) * 2022-02-09 2023-08-17 주식회사 에프에스티 Method and device for inspecting baseplate of a reticle pod

Similar Documents

Publication Publication Date Title
US9710905B2 (en) Mask inspection apparatus and mask inspection method
JP5832345B2 (en) Inspection apparatus and inspection method
JP5331828B2 (en) Charged particle beam equipment
JP6043662B2 (en) Inspection method and inspection apparatus
CN111553897B (en) Wafer defect detection equipment
US8254663B2 (en) Ultrafine lithography pattern inspection using multi-stage TDI image sensors with false image removability
CN106133898B (en) Variable image field curvature for object inspection
CN111554591B (en) Semiconductor chip processing apparatus
US9626755B2 (en) Mask inspection apparatus and mask inspection method
JP6170707B2 (en) Inspection method and inspection apparatus
JP5514754B2 (en) Inspection apparatus and inspection method
JP2017032369A (en) Pattern inspection device and pattern inspection method
KR20120129302A (en) Wafer defect high speed inspection apparatus
JP2017531787A (en) Wafer edge inspection with trajectory following edge profile
JP2009097928A (en) Defect inspecting device and defect inspection method
WO2012042715A1 (en) Inspection device
KR102050960B1 (en) method for testing particle in peripheral region of wafer
JP2009188175A (en) External appearance inspecting apparatus and method
JP2019135464A (en) Pattern inspection method and pattern inspection device
JP2006242681A (en) Visual inspection apparatus
US9423359B2 (en) Wafer charging electromagnetic inspection tool and method of using
JP7079569B2 (en) Inspection methods
JP2007005690A (en) Inspection apparatus for semiconductor device and method for inspecting semiconductor device by using it
KR20050117710A (en) Method of detecting defect of a wafer
JP4131728B2 (en) Image creation method, image creation apparatus, and pattern inspection apparatus

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right