KR20170053114A - 웨이퍼의 가공 방법 - Google Patents

웨이퍼의 가공 방법 Download PDF

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Publication number
KR20170053114A
KR20170053114A KR1020160141851A KR20160141851A KR20170053114A KR 20170053114 A KR20170053114 A KR 20170053114A KR 1020160141851 A KR1020160141851 A KR 1020160141851A KR 20160141851 A KR20160141851 A KR 20160141851A KR 20170053114 A KR20170053114 A KR 20170053114A
Authority
KR
South Korea
Prior art keywords
wafer
line
divided
dividing
laser beam
Prior art date
Application number
KR1020160141851A
Other languages
English (en)
Korean (ko)
Inventor
야스요시 유비라
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20170053114A publication Critical patent/KR20170053114A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
KR1020160141851A 2015-11-05 2016-10-28 웨이퍼의 가공 방법 KR20170053114A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015217354A JP2017092129A (ja) 2015-11-05 2015-11-05 ウエーハの加工方法
JPJP-P-2015-217354 2015-11-05

Publications (1)

Publication Number Publication Date
KR20170053114A true KR20170053114A (ko) 2017-05-15

Family

ID=58739855

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160141851A KR20170053114A (ko) 2015-11-05 2016-10-28 웨이퍼의 가공 방법

Country Status (4)

Country Link
JP (1) JP2017092129A (ja)
KR (1) KR20170053114A (ja)
CN (1) CN107068616A (ja)
TW (1) TWI697946B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6890890B2 (ja) * 2017-07-04 2021-06-18 株式会社ディスコ ウェーハの加工方法
JP7118522B2 (ja) * 2017-09-19 2022-08-16 株式会社ディスコ ウェーハの加工方法
JP7007052B2 (ja) * 2017-09-19 2022-01-24 株式会社ディスコ ウェーハの加工方法
JP7082502B2 (ja) * 2018-03-06 2022-06-08 株式会社ディスコ ウェーハの加工方法
JP7208062B2 (ja) * 2019-03-01 2023-01-18 株式会社ディスコ デバイスチップの形成方法
CN110732790A (zh) * 2019-10-28 2020-01-31 东莞记忆存储科技有限公司 一种封装基板切割的加工工艺方法
CN110625834A (zh) * 2019-11-01 2019-12-31 常州时创能源科技有限公司 晶硅边皮料的切割方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194515A (ja) * 2006-01-23 2007-08-02 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5597051B2 (ja) * 2010-07-21 2014-10-01 浜松ホトニクス株式会社 レーザ加工方法

Also Published As

Publication number Publication date
TW201729269A (zh) 2017-08-16
JP2017092129A (ja) 2017-05-25
CN107068616A (zh) 2017-08-18
TWI697946B (zh) 2020-07-01

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A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application