KR20170027292A - Organic light emitting display device and method for driving the same - Google Patents

Abstract

An organic light emitting display according to the present invention includes a display panel which includes a plurality of subpixels wherein each of the subpixels includes an organic light emitting diode and a driving transistor for driving the organic light emitting diode, a sensing time determining part for determining a sensing time for each of the subpixels; and a sensing part for sensing the characteristic value of the driving transistor through the determined sensing time. The sensing time is independently determined for each color according to the size information of the driving transistor. So, it is possible to increase the reliability of compensation and sensing.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display device,

The present invention relates to an organic light emitting display and a driving method thereof.

2. Description of the Related Art In recent years, an organic light emitting diode (OLED) display device that has been spotlighted as a display device has advantages of high response speed, high luminous efficiency, high luminance and wide viewing angle by using an organic light emitting diode (OLED) The organic light emitting display device arranges the pixels including the organic light emitting diode in a matrix form and controls the brightness of the pixels selected by the scan signals according to the gradation of the data.

Each subpixel disposed in the display panel of the organic light emitting display device is basically composed of a driving transistor for driving the organic light emitting diode, a switching transistor for transmitting a data voltage to the gate node of the driving transistor, and a storage capacitor .

As the driving time becomes longer, the driving transistor becomes degraded and the characteristic value such as the threshold voltage and the mobility can be changed. In addition, since the degree of deterioration may be different for each driving transistor, a characteristic value deviation between driving transistors in each sub-pixel may occur.

Variations in the characteristic values between the driving transistors cause a luminance variation between the sub-pixels, which may cause image quality degradation. Accordingly, various techniques for compensating a characteristic value deviation between driving transistors have been developed. In order to compensate the characteristic value deviation, the characteristic value of the driving transistor in each sub-pixel must be sensed.

However, as the organic light emitting display device becomes larger and higher resolution, the sensing time becomes longer. The image can not be displayed while sensing the characteristic value of the driving transistor. Therefore, if the sensing time is long, the product performance is deteriorated. On the other hand, if the sensing time is not sufficient, the characteristic value deviation compensation becomes incomplete and the image quality deteriorates.

SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide an organic light emitting display and a method of driving the same that can increase the reliability of sensing and compensation while reducing the sensing time for the characteristic value of the driving transistor.

According to an aspect of the present invention, there is provided an organic light emitting diode (OLED) display device including a display panel including a plurality of subpixels, each subpixel including an organic light emitting diode and a driving transistor for driving the organic light emitting diode, And a sensing unit for sensing a characteristic value of the driving transistor through the determined sensing time. The sensing time may be determined according to the size information of the driving transistor, It is determined independently.

The organic light emitting diode display further includes a TFT data base for providing the size information of the driving transistor for each color set in the sensing time determining unit.

The sensing time determination unit determines the sensing time in inverse proportion to the size of the driving transistor.

A method of driving an organic light emitting display including a plurality of subpixels, each subpixel including an organic light emitting diode and a driving transistor for driving the organic light emitting diode, the method comprising: determining a sensing time for the subpixels; And sensing the characteristic value of the driving transistor through the determined sensing time, wherein the sensing time is independently determined for each color according to size information of the driving transistor.

An organic light emitting display according to another embodiment of the present invention includes a plurality of subpixels each including an organic light emitting diode and a driving transistor for driving the organic light emitting diode, And an organic light emitting display panel disposed corresponding to each of the lines and adapted to simultaneously output data for simultaneously sensing data voltages for S (2? S? K) data lines among the K data lines during sensing the characteristic value of the driving transistor A driver, an analog digital converter for sensing the voltage of the sensing line K and outputting K sensing voltages, a current amount ratio of the driving transistors of S subpixels connected to the S data lines, Based on an inverse matrix of a K x K matrix determined by a driving transistor size ratio and the K sensing voltages, And a compensator for calculating a characteristic value of the driving transistor for each of the K subpixels connected to the data line.

The S subpixels are selected as subpixels that are simultaneously sensed among the K subpixels.

The data driver outputs a black data voltage defined as a non-sensing data voltage to K-S data lines excluding the S data lines out of the K data lines.

When the characteristic value of the driving transistor is a mobility of the driving transistor and the S is small to K, each matrix coefficient of each column in the K x K matrix is a sum of the matrix coefficients of the driving sub- The current is determined as a value divided by the amount of current of the total current flowing through the sensing line every time the driving transistor characteristic value is sensed.

The data driver outputs a data voltage for sensing the mobility of the driving transistor to each sub-pixel so that the currents flowing through the driving transistors of the S sub-pixels are equal to each other.

When the characteristic value of the driving transistor is the mobility of the driving transistor and the S is K, each matrix coefficient of each column in the K x K matrix represents a current flowing through the driving transistor of the corresponding subpixel And the amount of current of the total current flowing through the sensing line every time the one driving transistor characteristic value is sensed.

The data driver is configured such that the current flowing through the driving transistor of one sub-pixel is equal to the sum of the currents flowing through the driving transistors of the other K-1 sub-pixels, and the driving transistors of the other K- And simultaneously outputs the sensing data voltage set for the same currents to the S data lines.

Wherein the characteristic value of the driving transistor is a threshold voltage of the driving transistor and the compensator comprises a K × K matrix expressed by reflecting a magnitude ratio of a driving transistor included in the S subpixels, The threshold voltage of the driving transistor in each of the K subpixels is calculated.

Wherein the characteristic value of the driving transistor is a threshold voltage of the driving transistor, and the compensator calculates a ratio of a channel width of a transistor included in the S subpixels and a ratio of a channel width of the transistor included in the S subpixels, And a threshold voltage of the driving transistor in each of the K subpixels based on the K sensing voltages.

When the S is K, the data driver outputs a sensing data voltage simultaneously to the S data lines, and outputs a second sensing data voltage to one of the S data lines, Lt; / RTI >

The number of simultaneously-sensed sub-pixels is set differently at least once during the K number of sensing operations.

The sensing time required for each of the K-th sensing is set in inverse proportion to the size of the driving transistor of the sub-pixels sensed at the same time.

The organic light emitting display according to the present invention includes a plurality of subpixels each including an organic light emitting diode and a driving transistor for driving the organic light emitting diode, each sensing line corresponding to each of K (K? 2) A method of driving an organic light emitting display having a panel, comprising the steps of simultaneously outputting a data voltage for sensing with S (2? S? K) data lines among the K data lines while sensing the driving transistor characteristic value , Sensing the voltage of the sensing line K and outputting K sensing voltages, determining a current amount ratio of the driving transistors of the S subpixels connected to the S data lines or a driving transistor size ratio of the S subpixels And an inverse matrix of a K x K matrix determined based on the K sensing voltages, And a step of calculating a characteristic value of the driver transistor for the respective pixels probe.

According to another exemplary embodiment of the present invention, there is provided an organic light emitting display including a plurality of subpixels each including an organic light emitting diode and a driving transistor for driving the organic light emitting diode, An organic light emitting diode (OLED) display panel, each OLED display panel corresponding to each data line and driving the gate line of the organic light emitting display panel, A data driver for outputting a data voltage for sensing with any one of the K data lines while sensing a characteristic value of the driving transistor; An analog digital converter for sensing and outputting L sensing voltages; A compensator for calculating a characteristic value of the driving transistor for each of the L subpixels connected to the L gate lines based on the inverse matrix of the L x L matrix determined by the current amount ratio of the driving transistor of the subpixel and the L sensing voltages, .

The M subpixels are selected as subpixels that are simultaneously sensed among the L subpixels.

Wherein the characteristic value of the driving transistor is a mobility of the driving transistor and each matrix coefficient of each column in the LxL matrix is a value obtained by multiplying a current flowing through the driving transistor of the corresponding subpixel among the M subpixels by a single driving transistor characteristic value By the amount of current of the total current flowing through the sensing line.

The present invention relates to an organic light emitting diode display in which a plurality of subpixels each including an organic light emitting diode and a driving transistor for driving the organic light emitting diode are arranged and each sensing line is arranged corresponding to each of K (K? 1) (OLED) display panel, wherein during the measurement of the characteristic value of the driving transistor, a scan signal is simultaneously applied to M (2? M? L) gate lines among L gate lines of the OLED display panel, Outputting a sensing data voltage to one of the K data lines while sensing a characteristic value of the driving transistor; sensing L voltage of the sensing line to output L sensing voltages; And an L × L row which is determined by a current amount ratio of the driving transistors of M subpixels connected to the M gate lines By the inverse matrix and, based on the L sensing voltage, and a step of calculating a characteristic value of the driver transistor for the L sub-pixels each connected to the L number of the gate lines.

The present invention can increase the reliability of sensing and compensation while reducing the sensing time for the characteristic value of the driving transistor.

According to the present invention, by setting the sensing time differentially according to the size of the driving transistor for each color, sensing time can be optimally allocated to each sub pixel, thereby effectively reducing the sensing time.

According to the present invention, a plurality of sub-pixels are simultaneously sensed to reduce the sensing time, and the individual sensing voltage is calculated using a matrix formula reflecting the ratio of the amount of current flowing through the driving transistor, Can be accurately performed. According to the present invention, even if the current capability of the driving transistor is insufficient, mobility sensing can be accurately performed even with a data voltage which is not high within a short sensing time.

The present invention can accurately sense and compensate the threshold voltage of a driving transistor by simultaneously sensing a plurality of subpixels to reduce the sensing time and calculating the individual sensing voltage using a matrix formula reflecting the size ratio of the driving transistor have.

The present invention can significantly reduce the noise level even when a plurality of sensors are simultaneously sensed by properly setting the sensing time and the saturation level in inverse proportion to the size of the driving transistor.

1 is a schematic system configuration diagram of an organic light emitting diode display according to the present invention.
2 is an equivalent circuit diagram of a subpixel of an organic light emitting display according to the present invention.
3 is an exemplary diagram of a subpixel compensation circuit of an organic light emitting display according to the present invention.
4 is a graph illustrating changes in voltage of a first node of a sensing node or a driving transistor in a threshold voltage sensing operation of the organic light emitting diode display according to the present invention.
FIG. 5 is a diagram comparing sizes of driving transistors for respective colors of an OLED display according to the present invention.
6 is a graph showing a threshold voltage (Vth) value of a sensing driving transistor according to the sensing time of each color of the organic light emitting diode display according to the present invention.
FIG. 7 is a view showing the sensing time and the saturation time for each color of the organic light emitting diode display according to the present invention.
FIG. 8 is a diagram illustrating a case where the organic light emitting display according to the present invention performs sensing driving at a different sensing time for each color.
9 is a block diagram of a controller for providing a method of driving an organic light emitting display according to the present invention.
10 is a graph illustrating the sensing time of each color of the OLED display according to an exemplary embodiment of the present invention.
11 is a graph showing the sensing time of each color of the OLED display according to another embodiment of the present invention.
12 is a graph showing image quality characteristics according to sensing time of the organic light emitting display device.
13 is a flowchart of a method of driving an OLED display according to the present invention.
FIG. 14 is a schematic system configuration diagram of an organic light emitting display according to the present embodiments.
15 is an illustration of a subpixel compensation circuit in the organic light emitting display panel according to the present embodiments.
FIG. 16 is a diagram showing a mobility sensing drive according to the present embodiments.
FIG. 17 is a view for explaining a characteristic value compensation concept of the driving transistor according to the present embodiments.
18 is a diagram exemplifying the components of the data voltage and the respective voltage ranges for the mobility sensing use according to the present embodiments.
FIG. 19 is a diagram showing a change in voltage of a sensing line according to sensing time when sensing the mobility according to the present embodiments.
FIGS. 20 and 21 are illustrations of voltage changes of a sensing line according to sensing time in the mobility sensing according to the present embodiments.
FIG. 22 is an exemplary view of a sensing line arrangement in an organic light emitting display panel according to the present embodiments. FIG.
23A is a diagram illustrating a method of sensing only one subpixel among four subpixels commonly connected to one sensing line at the time of mobility sensing according to the present embodiments.
23B is a diagram showing the relationship between four sub pixels R (SP # 4m-3), W (SP # 4m-2), G SP # 4m), the sensing value and the compensation value are exemplarily shown in the mobility sensing step.
24 is a view illustrating a method of simultaneously sensing two subpixels out of four subpixels commonly connected to one sensing line at the time of mobility sensing according to the present embodiments.
25 is a diagram illustrating a method of simultaneously sensing three subpixels out of four subpixels commonly connected to one sensing line at the time of mobility sensing according to the present embodiments.
26 is a view illustrating a method of simultaneously sensing four subpixels out of four subpixels connected in common to one sensing line at the time of mobility sensing according to the present embodiments.
27 is a timing chart for sensing two subpixels among four subpixels R, W, G, and B connected in common to one sensing line SL # m at the time of mobility sensing according to the present embodiments (S = 3) for sensing three subpixels simultaneously (S = 2) and for sensing four subpixels (S = 4) at the same time.
28A is a diagram showing a relationship between three sub-pixels R, W, G and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # G) at the same time (K = 4, S = 3).
28B is a diagram showing a relationship between three sub-pixels R, W, G and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # G) are simultaneously applied, a sensing value and a compensation value are calculated in the mobility sensing step.
29A is a diagram showing the relationship between four sub-pixels R, W, G and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # G, B) are simultaneously applied (K = 4, S = 4).
FIG. 29B is a diagram showing a relationship between three sub-pixels R, W, G and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # G) are simultaneously applied to a sensing value and a compensation value in the sensing step of the mobility.
30 shows the relationship between four sub-pixels (SP # (4m, j + 1), SP # (4m, j) (SP # (4m, j + 1), SP # (4m, j + 2), SP # , SP # (4m, j + 3)) are simultaneously sensed (L = 4, M = 3).
FIG. 31 is a diagram for explaining a case where four sub pixels (SP # (4m, j + 1), SP # (4m, j + (SP # (4m, j + 1), SP # (4m, j + 2), SP # SP # (4m, j + 3)) are applied to a sensing value and a compensation value in a mobility sensing step.
FIG. 32 is a view for explaining the threshold voltage sensing principle for the driving transistor DRT of the OLED display 100 according to the present embodiments. Referring to FIG.
FIG. 33 shows that threshold voltage sensing, which simultaneously senses threshold voltages of two or more subpixels, for example two or three subpixels, has global nonlinearity or nonlinear characteristics.
34A to 34D are diagrams for explaining a case where three subpixels (R, W, G and B) among four subpixels (R, W, G, B) connected in common to one sensing line SL # (K = 4, S = 3) are simultaneously sensed on the basis of R / W / G, W / G / B, G / B / R and B / R / W.
35A to 35D are diagrams for explaining a case where two or three sub-pixels R, W, G, and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # (K = 4, S = 2 or 3) in which the subpixels R / W, W / G, W / B and R / G /
36A to 36D are diagrams for explaining a case where one or two of four sub-pixels (R, W, G, B) connected in common to one sensing line SL # m (K = 4, S = 1 or 2) simultaneously on the subpixels W, R / G, G / B and R /
37 is a diagram illustrating an example of simultaneously sensing four subpixels R, W, G and B connected in common to one sensing line SL #m at the time of threshold voltage sensing according to the present embodiments ( K = 4, S = 4).
38 is a diagram showing that the sensing time and the noise level are in a trade-off relationship with each other.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are used only to distinguish one component from another.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other partially or wholly and technically various interlocking and driving are possible and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic system configuration diagram of an OLED display 100 according to an embodiment of the present invention.

1, an OLED display 100 according to the present invention includes a plurality of data lines DL and a plurality of gate lines GL, a plurality of subpixels SP arranged in a matrix type, A data driver 120 for driving a plurality of data lines by supplying a data voltage to a plurality of data lines and a plurality of gate lines by sequentially supplying scan signals to the plurality of gate lines, A gate driver 130 that sequentially drives the controller, a controller 140 that controls the data driver 120 and the gate driver 130, and the like.

The controller 140 supplies various control signals DCS and GCS to the data driver 120 and the gate driver 130 to control the data driver 120 and the gate driver 130. The controller 140 starts scanning according to the timing implemented in each frame and switches input image data input from the outside according to the data signal format used by the data driver 120 to output the converted image data DATA And controls the data driving according to the scan. The controller 140 may be implemented with at least one timing controller.

The gate driver 130 sequentially drives the plurality of gate lines by sequentially supplying a scan signal of an On voltage or an Off voltage to the plurality of gate lines under the control of the controller 140. Here, the gate driver 130 may be referred to as a scan driver. 1, the gate driver 130 may be located on only one side of the display panel 110, or may be located on both sides, depending on the driving system. In addition, the gate driver 130 may include one or more gate driver integrated circuits.

Each gate driver integrated circuit may be connected to a bonding pad of the display panel 110 by a Tape Automated Bonding (TAB) method or a chip on glass (COG) method, or may be connected to a GIP (Gate In Panel) Type, and may be directly disposed on the display panel 110, and may be integrated and disposed on the display panel 110, as the case may be. Each gate driver integrated circuit may include a shift register, a level shifter, and the like.

When the specific gate line is opened, the data driver 120 converts the image data (DATA) received from the controller 140 into analog data voltages and supplies the data voltages to the data lines to drive the plurality of data lines. The data driver 120 may include at least one source driver integrated circuit to drive a plurality of data lines.

Each source driver integrated circuit may be connected to a bonding pad of the display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) And may be integrated and disposed on the display panel 110 as occasion demands. Each source driver integrated circuit can be implemented by a chip on film (COF) method. In this case, one end of each source driver integrated circuit is bonded to at least one source printed circuit board, and the other end is bonded to the display panel 110.

Each source driver integrated circuit may include a logic portion including a shift register, a latch circuit, etc., a digital analog converter (DAC), an output buffer, and the like, For example, a threshold voltage and a mobility of a driving transistor, a threshold voltage of an organic light emitting diode, a luminance of a subpixel, and the like).

On the other hand, the controller 140 outputs various kinds of signals including the vertical synchronization signal Vsync, the horizontal synchronization signal Hsync, the input data enable signal (DE), and the clock signal (CLK) Timing signals from the outside (e.g., the host system).

The controller 140 outputs the converted image data by switching the input image data inputted from the outside in accordance with the data signal format used by the data driver 120 and outputs the converted image data to the data driver 120 and the gate driver 130, A timing signal such as a vertical synchronization signal Vsync, a horizontal synchronization signal Hsync, an input DE signal and a clock signal and generates various control signals to control the data driver 120 and the gate driver 130, .

For example, in order to control the gate driver 130, the controller 140 generates a gate start pulse (GSP), a gate shift clock (GSC), a gate output enable signal GOE Gate Output Enable), and the like.

Here, the gate start pulse GSP controls the operation start timing of one or more gate driver integrated circuits constituting the gate driver 130. The gate shift clock GSC is a clock signal commonly input to one or more gate driver integrated circuits, and controls the shift timing of the scan signal (gate pulse). The gate output enable signal GOE specifies the timing information of one or more gate driver ICs.

In order to control the data driver 120, the controller 140 may further include a source start pulse (SSP), a source sampling clock (SSC), a source output enable signal (SOE) And outputs various data control signals (DCS: Data Control Signals).

Here, the source start pulse SSP controls the data sampling start timing of one or more source driver integrated circuits constituting the data driver 120. The source sampling clock SSC is a clock signal for controlling sampling timing of data in each of the source driver integrated circuits. The source output enable signal SOE controls the output timing of the data driver 120.

1, the controller 140 includes a source printed circuit board to which a source driver integrated circuit is bonded and a connection medium such as a flexible flat cable (FFC) or a flexible printed circuit (FPC) Lt; RTI ID = 0.0 > (Printed Circuit Board). ≪ / RTI >

A power controller (not shown) for controlling various voltages or currents to supply or supply various voltages or currents to the display panel 110, the data driver 120, and the gate driver 130 is further disposed on the control printed circuit board . The power controller is also referred to as a power management IC (PMIC). The source printed circuit board and the control printed circuit board may be integrated into a single printed circuit board.

Each of the plurality of subpixels arranged in the display panel 110 according to the present invention includes an organic light emitting diode (OLED), a driving transistor (DRT) for driving the organic light emitting diode, and a storage capacitor Device may be included. The types and the number of the circuit elements constituting each subpixel can be variously determined depending on a providing function, a design method, and the like. Hereinafter, a subpixel structure for sensing and compensating characteristic values such as threshold voltage and mobility of the driving transistor DRT will be described as an example.

2 is an equivalent circuit diagram of a subpixel of an organic light emitting display according to the present invention.

2, each subpixel SP disposed in the display panel 110 of the present invention includes an organic light emitting diode OLED, a driving transistor DRT driving the organic light emitting diode OLED, A switching transistor SWT connected between the first node N1 of the driving transistor DRT and the data line DL and transferring the data voltage Vdata to the first node N1 of the driving transistor DRT, A storage capacitor Cst serving to maintain a constant voltage for one frame time, a second node N2 of the driving transistor DRT, a reference voltage Vref supplied with the reference voltage Vref, And a sensing transistor (SENT) electrically connected between a line (RVL) and a reference voltage line (RVL).

The organic light emitting diode OLED includes a first electrode (e.g., an anode electrode), an organic layer, and a second electrode (e.g., a cathode electrode). For example, the first electrode of the organic light emitting diode OLED is connected to the second node N2 of the driving transistor DRT, and the second electrode of the organic light emitting diode OLED is connected to the input terminal of the ground voltage EVSS .

The driving transistor DRT is a transistor for driving the organic light emitting diode OLED by applying a driving current to the organic light emitting diode OLED and includes a first node N1 corresponding to a gate node, , And a third node N3 corresponding to a drain node (or a source node). For example, the second node N2 of the driving transistor DRT may be electrically connected to the first electrode of the organic light emitting diode OLED. The second node N2 of the driving transistor DRT may also be electrically connected to the source node (or drain node) of the sensing transistor SENT. The first node N1 of the driving transistor DRT may be electrically connected to the source node (or the drain node) of the switching transistor SWT and the third node N3 of the driving transistor DRT may be electrically connected to the driving voltage EVDD And a driving voltage line (DVL) for supplying the driving voltage (DVL).

The switching transistor SWT is a transistor for transmitting the data voltage Vdata to the first node N1 of the driving transistor DRT and is connected between the first node N1 of the driving transistor DRT and the data line DL As shown in FIG. A scan signal SCAN is applied to the gate node of the switching transistor SWT and the switching transistor SWT can be turned on and off by the scan signal SCAN.

The storage capacitor Cst may be electrically connected between the first node N1 and the second node N2 of the driving transistor DRT.

The sensing transistor SENT is electrically connected between the second node N2 of the driving transistor DRT and the sensing line SL and is connected to the gate node of the sensing transistor SENT by a sense signal SENSE Can be turned on / off. Here, an arbitrary point on the sensing line SL corresponds to the sensing node Ns. The sensing transistor SENT is turned on to apply the reference voltage Vref of the sensing line SL to the second node N2 of the driving transistor DRT.

The gate node of the switching transistor SWT and the gate node of the sensing transistor SENT may be electrically connected to the same gate line to receive the same gate signal. In this case, the scan signal SCAN and the sense signal SENSE are the same gate signal.

Alternatively, the gate node of the switching transistor SWT and the gate node of the sensing transistor SENT may be electrically connected to different gate lines. In this case, the scan signal SCAN and the sense signal SENSE are different gate signals.

On the other hand, each driving transistor DRT has a characteristic value such as a threshold voltage (Vth) and a mobility. The value of the characteristic value of the driving transistor DRT can be changed by the degradation according to the driving time. The characteristic value deviation between the driving transistors DRT includes a threshold voltage deviation and a mobility deviation.

In order to compensate for a characteristic value deviation between the driving transistors DRT, the organic light emitting diode display 100 according to the present invention has characteristic values (also referred to as a sub-pixel characteristic value) for the driving transistor DRT of each sub- ). The present invention includes a sensing unit 300 for sensing sub-pixel characteristics. The sensing unit 300 may be implemented as an analog to digital converter (ADC) connected to the sensing line SL through the second switch SW2 and may further include a sampling unit . The sampling unit senses the voltage on the sensing line SL that has become a specific voltage state through sensing driving, and the analog digital converter (ADC) can convert the sensed voltage into a digital value to output sensing data. The sensing data output by the sensing unit 300 may be stored in the memory 310.

The organic light emitting diode display 100 according to the present invention may include a compensation unit 320 for compensating for a sub-pixel characteristic value deviation as shown in FIG. The compensation unit 320 calculates a compensation value for compensating the deviation of the subpixel characteristic value using the sensing data received from the sensing unit 300. The compensation value calculated by the compensation unit 320 may be stored in the memory 310. [ The compensation unit 320 corrects the digital image data to be supplied to the corresponding subpixel using the compensation value, and supplies the correction data to the data driver 120. [ The correction data may be generated by adding or multiplying the compensation value to the original input image data. Thus, the sub pixel property value deviation can be compensated. The compensation unit 320 may be included in the controller 140.

4 is a graph illustrating changes in voltage of a second node of a sensing node or a driving transistor in a threshold voltage sensing operation of the organic light emitting diode display according to the present invention. Referring to FIG. 3 and FIG. 4, the principle of sensing the threshold voltage (or threshold voltage variation) of the driving transistor DRT will be briefly described.

The threshold voltage sensing operation of the OLED display 100 according to the present embodiment may include an initialization step S410, a voltage follow step S420, and a sensing step S430.

In the initialization step S410, the first node N1 and the second node N2 of the driving transistor DRT are initialized to the data voltage Vdata and the reference voltage Vref, respectively, Is set. In the initialization step S410, the switching transistor SWT is turned on and the data voltage Vdata is applied to the first node N1 of the driving transistor DRT. The first switch SW1 connects the sensing line SL and the reference voltage supply node Nref and the sensing transistor SENT is turned on so that the reference voltage Vref is applied to the second And is applied to the node N2.

In the voltage-following step S420, the data voltage Vdata is continuously applied to the first node N1 of the driving transistor DRT, and a current flows in the driving transistor DRT. The second node N2 of the driving transistor DRT is floated by turning off the first switch SW1 in the voltage following step S420. As a result, the voltage of the second node N2 rises due to the current flowing in the driving transistor DRT. In other words, in the voltage-following step S420, the voltage of the second node N2 of the driving transistor DRT follows the voltage of the first node N1 (i.e., the data voltage Vdata) , It rises from the reference voltage (Vref) toward the data voltage (Vdata). The current of the driving transistor DRT is turned off when the voltage difference between the first and second nodes N1 and N2 of the driving transistor DRT becomes the threshold voltage Vth of the driving transistor DRT. The voltage of the second node N2 of the driving transistor DRT is settled when the current of the driving transistor DRT is turned off. When the voltage of the second node N2 of the driving transistor DRT is settled, the voltage difference between the first and second nodes N1 and N2 of the driving transistor DRT becomes the threshold voltage Vth.

The sensing step S430 senses the voltage of the second node N2 of the driving transistor DRT after the saturation. In the sensing step S430, the second switch SW2 is turned on, and the sensing unit 300 senses the voltage (Vdata-Vth) of the sensing line SL. In the sensing step S430, the voltage of the sensing line SL is equal to the voltage of the second node N2 of the driving transistor DRT. The threshold voltage Vth of the driving transistor DRT can be determined by subtracting the already known data voltage Vdata from the sensing voltage Vdata-Vth obtained in the sensing step S430.

The threshold voltage sensing operation of such an organic light emitting display device proceeds individually in units of colors. For example, the threshold voltage sensing operation may be completed for the white (W) subpixels (SP) after completing for the red (R) subpixels (SP) (B) subpixels (SP) after completing with respect to the blue (B) subpixels (SP).

FIG. 5 is a graph comparing the sizes of driving transistors for respective colors in the organic light emitting display according to the present invention. FIG. 6 is a graph showing the threshold voltages FIG. 7 is a view showing the sensing time and the saturation time for each color of the organic light emitting diode display according to the present invention, and FIG. 8 is a graph showing the sensing time and the saturation time for each color of the OLED display according to the present invention. And sensing driving at a different sensing time.

Referring to FIGS. 1 to 3 and FIGS. 5 to 8, a driving transistor DRT for driving the organic light emitting diode OLED is disposed in each subpixel of the present invention. The sizes of the driving transistors DRT arranged in the green (G), blue (W), green (G) and blue (B) subpixels SP may have different sizes.

In addition, as shown in the figure, the red driving transistor DRTr is arranged in the red (R) sub-pixel, the white driving transistor DRTw is arranged in the white (W) A green driving transistor DRTg is arranged for a pixel and a blue driving transistor DRTb is arranged for a blue (B) sub-pixel. The size of the driving transistor DRT disposed in each sub-pixel may be different for each color [S (DRTr)? S (DRTw)? S (DRTg)? S (DRTb)]. Here, the size of the driving transistor may be defined as a channel width / channel length. If the size of the driving transistor is large, the current driving capability is good and the amount of current that can be passed per unit time increases. If the current flowing to the driving transistor is large, the time required for the driving transistor to be sucked may be short. Therefore, the size of the driving transistor is highly related to the sensing time.

In addition, the size of the driving transistor may be different in some of the sub-pixels having different colors. For example, the sizes of the driving transistors DRT arranged in the white (W) subpixel and the green (G) subpixel are the same [S (DRTw) = S (DRTg)], (DRTr) < > S (DRTb)] may be different from each other in the size of the driving transistor DRT arranged in the pixel and the blue (B)

As described above, if the sizes of the driving transistors DRT disposed in at least some sub-pixels are different, the sensing time must be changed accordingly. This is because, if the sizes of the driving transistors DRT are different, the sampling time at which the sensing value Vsen can be obtained will be different.

Referring to FIG. 6, thresholds of driving transistors DRTr, DRTw, DRTg, and DRTb sensed by sensing time for red (R), white (W), green (G), and blue (B) The voltage Vth is shown. It can be seen that the sensing time required for the red (R), white (W), green (G) and blue (B) subpixels SP is different. That is, the sensing time required to sense the threshold voltage Vth is the longest in the white W subpixel, then the green (G) subpixel is long, and the red (R) and blue (B) short. This is because the sizes of the driving transistors DRTr, DRTw, DRTg and DRTb disposed in the red (R), white (W), green (G) and blue It is different.

The size of the driving transistors DRTr, DRTw, DRTg and DRTb arranged in the red (R), white (W), green (G) and blue (B) subpixels SP, The saturation point (Sat) is also different for each subpixel.

Referring to the graph of FIG. 5, the saturation point of the driving transistors DRTr and DRTb of the red (R) and blue (B) subpixels is relatively short and the white (W) It can be seen that the deposition time of the driving transistors DRTw and DRTg of the pixels is relatively long. The smaller the size of the drive crank, the longer the saturation point (Sat).

Based on this fact, the existing sensing time equal setting method and the sensing time differential setting method of the present invention will be described as follows.

In the conventional sensing time equalization method, the sensing time for the red (R), white (W), green (G) and blue (B) subpixels (SP) Respectively. In the conventional sensing time equalization method, the sensing time Tsen is set on the basis of the white (W) subpixel SP at which the saturation point (Sat) is the latest and the red (R), green (B) The sub-pixel SP is set equal to the sensing time Tsen. (G), red (R), and blue (B) driving transistors DRTg, DRTr, and DRTb having a shorter settling time than the white driving transistor DRTw according to the conventional sensing time equalizing method The sensing time is unnecessarily prolonged and the overall sensing time is increased.

On the other hand, when the sensing time is set based on a sub-pixel having a short saturation point (Sat) in the conventional sensing time equalization method, the sensing time of the sub-pixel having the long saturation point (Sat) becomes insufficient, The accuracy of the value is lowered.

On the other hand, the sensing time differential setting method of the present invention is based on the difference in size of the driving transistors for each color, and the sensing time difference setting method for sensing (R, W, G, and B) The time can be set independently. According to the sensing time differential setting method of the present invention, the sensing time allocated to the threshold voltage sensing can be set differently for each color based on the size of the driving transistors. The present invention increases the sensing time for color subpixels having a relatively small size of the driving transistor and reduces the sensing time for color subpixels having a relatively large driving transistor size. That is, the present invention can determine the sensing time in inverse proportion to the size of the driving transistor. Accordingly, in the present invention, the red (R), white (W), and blue (R) colors are generated without increasing the sensing time for the red (R), white (W), green (G) , Green (G) and blue (B) subpixels (SP). As in the present invention, if the sensing time required by each of the subpixels is satisfied, the sensing accuracy is improved, which contributes to the improvement of the reliability of compensation and the image quality.

In the present invention, only the necessary sensing time is required for each sub-pixel, thereby reducing the total sensing time of the red (R), white (W), green (G) and blue (B) have. Reducing the overall sensing time is advantageous for enhancing product performance.

Referring to FIG. 8, the sensing time differential setting method of the present invention will be described in detail as follows. 8, the driving transistors DRTr, DRTw, DRTg, and DRTb disposed in red (R), white (W), green (G), and blue (B) subpixels SP, (Tsen1, Tsen2, Tsen3, Tsen4) are set differently from each other.

The first sensing time Tsen1 composed of the initializing step SR101, the voltage following step SR102 and the sensing step SR103 is performed for the red (R) driving transistor DRTr disposed in the red (R) For the white (W) driving transistor DRTw arranged in the white (W) subpixel, a second sensing time (SW101) composed of the initializing step SW101, the voltage following step SW102 and the sensing step SW103 And a sensing step SG103 for the green (G) driving transistor DRTg disposed in the green (G) subpixel, the initialization step SG101, the voltage following step SG102, and the sensing step SG103. And the blue (B) driving transistor DRTb disposed in the blue (B) subpixel is allocated to the initializing step SB101, the voltage following step SB102 and the sensing step SB103 And allocates a fourth sensing time Tsen4.

(Sat) of the red (R) driving transistor DRTr disposed in the red (R) subpixel and the blue (B) driving transistor DRTb disposed in the blue (B) The first and fourth sensing times Tsen1 and Tsen4 for the red (R) and blue (B) subpixels are relatively short, thereby reducing the overall sensing time.

On the other hand, since the white (W) driving transistor DRTw arranged in the white (W) subpixel and the green (G) driving transistor DRTg arranged in the green (G) And the second and third sensing times Tsen2 and Tsen3 for the green (G) subpixels are relatively long, so that sufficient sensing can be performed.

FIG. 9 is a block diagram of a controller for providing a method of driving an organic light emitting display according to the present invention. FIG. 10 is a graph showing a sensing time for each subpixel in the organic light emitting display according to an embodiment of the present invention. And FIG. 11 is a graph illustrating the sensing time for each sub-pixel of the OLED display according to another embodiment of the present invention.

5, the controller 140 of the organic light emitting diode display 100 of the present invention includes driving transistors (not shown) disposed in each subpixel (R), white (W), green (G), and blue (B) colors by using the driving transistor (DRT) information of the TFT database 141 A sensing time determination unit 142 for determining a sensing time required for the subpixels SP and a sensing time information for each subpixel determined by the sensing time determination unit 142, A compensating unit 320 for generating a compensation value for compensating data using a sensing value Vsen obtained from the display panel 110 under the control of the sensing drive control unit 143; A storage unit 310 for storing the compensation values obtained by the compensation unit 320, And a group storage section 310, the data compensating part 330 compensates the digital image data to be supplied to the display panel 110, a compensation value based on the saved. Although not explicitly shown in the drawing, the image data compensated in the data compensating unit 300 may be supplied to the data driver 120 described in FIG.

5 and FIG. 8, the present invention can be applied to a driving method of driving a liquid crystal display (LCD) driven by red (R), white (W), green (G) and blue Information on the transistors DRTr, DRTw, DRTg, DRTb is stored in the TFT data base 141 in advance. The information of the driving transistors DRTr, DRTw, DRTg, and DRTb may further include a material and the like of the channel layer together with the width and the length of the channel layer that define the size of the driving transistors. In the present invention, the determination of the sensing time according to the size information of the driving transistor (DRT) for each color is mainly described. In some cases, the sensing time may be determined by further using the material information of the channel layer of the driving transistor.

In addition, the sensing time may be determined using the size of the organic light emitting diode disposed in each subpixel, the area or thickness of a specific layer among the organic layers, or the threshold voltage (Vth) of the organic light emitting diode.

The sensing time determiner 142 receives the driving transistors DRTr, DRTw, and DRTg of the red (R), white (W), green (G), and blue (B) subpixels SP from the TFT data base 141, , And DRTb), it is possible to individually determine the sensing time for each color. For example, the sensing time determiner 142 may determine a first sensing time Tsen1 for a red (R) subpixel and a second sensing time (Tsen2) for a white (W) subpixel according to FIGS. 6 and 8, The third sensing time Tsen3 for the green (G) subpixel, and the fourth sensing time (Tsen4) for the blue (B) subpixel.

10, assuming that the total sensing time is 120 [ms], the red (R), white (W), green (G), and blue (B) subpixels In the present invention, the sensing time is increased to 34.10 [ms] for the white (W) subpixel and the sensing time is 26.86 [ms] for the blue (B) subpixel, , The sensing time is increased to 32.79 [ms] for green (G) subpixels, and the sensing time is reduced to 26.24 [ms] for red (R) subpixels.

That is, in the sensing time differential setting method according to an embodiment of the present invention, the sensing time is reduced for the red (R) and blue (B) subpixels while the total sensing time (120 ms) To the sensing time for white (W) and green (G) subpixels, thereby ensuring sufficient sensing time for all subpixels. As described above, this embodiment has the effect of improving image quality defects without increasing the total sensing time by differentiating the sensing time by focusing on the different size of the driving transistor DRT for each color.

The sensing time differential setting method according to another embodiment of the present invention is a method of setting the sensing time at which the threshold voltage Vth to be the target can be sensed by using the red (R), white (W), green (G) B) sub-pixels SP, respectively, thereby reducing the total sensing time. For example, in this embodiment, the sensing time is set to 30 [ms] for the white (W) subpixel, the sensing time is set to 20 [ms] for the blue (B) subpixel, ) The sensing time is set to 30 [ms] for the subpixels and the sensing time is set to 20 [ms] for the red (R) subpixel, thereby reducing the total sensing time from 120 [ms] to 100 [ms] have. In this alternative embodiment of the present invention, the total sensing time of the red (R), white (W), green (G) and blue (B) subpixels (SP) And the image quality of the display panel can be improved.

Fig. 12 shows a stain defect on the display panel for each sensing time (1 ms, 8 ms, 30 ms, and 95 ms) based on the sensing data.

As the sensing time increases in the order of 1 ms, 8 ms, 30 ms, and 95 ms, the stain defect gradually disappears. As described above with reference to FIGS. 10 and 11 for the red (R), white (W), green (G) and blue (B) subpixels SP, , It is possible to improve image quality defects.

13 is a flowchart illustrating a method of driving an OLED display according to an exemplary embodiment of the present invention.

13, a method of driving an organic light emitting display according to an exemplary embodiment of the present invention includes arranging red (R), white (W), green (G), and blue (B) subpixels (Size information, channel layer information, and the like) of the driving transistor DRT is determined from the TFT database, and then the sensing time for each color is determined (S1301, S1302)

As described in FIGS. 7 and 8, the sensing time is determined for the first color subpixel with the fastest settling time considering the fact that it has a different saturation point depending on the size of the driving transistor DRT, And the sensing time is increased for the second color subpixel with a slower viewpoint.

If the sensing time for each color is determined, the sensing operation is performed for each of the subpixels according to the sensing time to acquire the sensing value (Vsen) (S1303, 1304)

Then, the present invention compensates the image data according to the sensing value (Vsen) and drives the display panel using the compensated data (S1305, S1306)

FIG. 14 is a schematic system configuration diagram of an OLED display 100 according to another embodiment of the present invention.

Referring to FIG. 14, the OLED display 100 according to another embodiment of the present invention includes a plurality of data lines DL # 1, DL # 2, ..., DL # 4M, A plurality of gate lines GL # 1, GL # 2, ..., GL # N, N being natural numbers of 1 or more) are arranged in a second direction crossing the first direction, OLED display panel 110 in which a plurality of subpixels SP are arranged in a matrix type and a data driver 120 for driving a plurality of data lines DL # 1, DL # 2, ..., DL # A gate driver 130 for driving the plurality of gate lines GL # 1 to GL # N and a timing controller 130 for controlling the data driver 120 and the gate driver 130, (T-CON, 140), and the like.

The gate driver 130 supplies a scan signal of an On voltage or an Off voltage to the gate lines GL # 1, GL # 2, ..., GL #N sequentially to drive a plurality of gate lines GL # 1, GL # 2, ..., GL #N sequentially. Each of the gate driver integrated circuits may include a shift register, a level shifter, and the like.

The data driver 120 converts the video data DATA received from the timing controller 140 into a data voltage of an analog form and outputs the data voltages to the plurality of data lines DL # 1, DL # 2, .., ., DL # 4M to drive a plurality of data lines DL # 1, DL # 2, ..., DL # 4M. The data driver 120 may include a logic portion including a shift register, a latch circuit, etc., a digital analog converter (DAC), an output buffer, and the like. In some cases, For example, a threshold voltage and a mobility of a driving transistor, a threshold voltage of an organic light emitting diode, a luminance of a subpixel, and the like).

The timing controller 140 supplies various control signals to the data driver 120 and the gate driver 130 to control the data driver 120 and the gate driver 130.

The timing controller 140 may switch the input image data inputted from the outside in accordance with the data signal format used by the data driver 120 and output the converted image data so that the data driver 120 and the gate driver 130 A timing signal such as a vertical synchronization signal Vsync, a horizontal synchronization signal Hsync, an input DE signal and a clock signal and generates various control signals to control the data driver 120 and the gate driver 130 .

Each subpixel SP disposed in the organic light emitting display panel 110 in the organic light emitting diode display 100 according to the present exemplary embodiment includes an organic light emitting diode (OLED), two or more transistors, A capacitor, and the like. The types and the number of the circuit elements constituting each subpixel can be variously determined depending on a providing function, a design method, and the like.

Each subpixel in the organic light emitting display panel 110 according to the present exemplary embodiment includes characteristic values (e.g., threshold voltage) of the organic light emitting diode OLED, characteristic values of the driving transistor for driving the organic light emitting diode OLED : A threshold voltage, a mobility, etc.), and the like.

15 is an illustration of a subpixel compensation circuit in the organic light emitting display panel 110 according to the present embodiments. FIG. 16 is a diagram showing a mobility sensing drive according to the present embodiments.

15, in the organic light emitting display panel 110 according to the present embodiment, each subpixel SP includes N (I = 1, 2, ..., 4M) It is one of the subpixels.

15, each sub-pixel SP includes an organic light emitting diode (OLED), a driving transistor DRT for driving the organic light emitting diode OLED, a first node N1 of the driving transistor DRT, A first node N1 of the driving transistor DRT and a corresponding data line DL #i controlled by the first scan signal SCAN; a storage capacitor Cst electrically connected between the first node N1 and the second node N2; A first transistor SWT electrically connected between the second node N2 of the driving transistor DRT and a sensing line SL electrically connected to the sensing line SL by a second scan signal SENSE, 2 transistor (SENT) or the like.

Referring to FIG. 15, the organic light emitting diode OLED includes a first electrode (e.g., an anode electrode or a cathode electrode), an organic layer, and a second electrode (e.g., a cathode electrode or an anode electrode). For example, the first electrode of the organic light emitting diode OLED may be connected to the second node N2 of the driving transistor DRT, and the second electrode of the organic light emitting diode OLED may be grounded have.

The driving transistor DRT is a transistor for driving the organic light emitting diode OLED by supplying a driving current to the organic light emitting diode OLED and includes a second node N2 corresponding to the source node A first node N1 corresponding to a node and a third node N3 corresponding to a drain node (or a source node). In this driving transistor DRT, for example, The second node N2 may be electrically connected to the first electrode of the organic light emitting diode OLED and the third node N3 may be electrically connected to the source node (or the drain node) May be electrically connected to the driving voltage line DVL for supplying the driving voltage EVDD.

The first transistor SWT is a transistor for transferring the data voltage VDATAi to the first node N1 of the driving transistor DRT and is connected to the first node N1 of the driving transistor DRT and the data line DL # and is turned on by the first scan signal SCAN applied to the gate node to transfer the data voltage VDATA to the first node N1 of the driving transistor DRT .

The storage capacitor Cst is electrically connected between the first node N1 of the driving transistor DRT and the first node N1 to maintain a constant voltage for one frame.

The second transistor SENT is electrically connected between the second node N2 of the driving transistor DRT and the sensing line SL and can be controlled by the second scan signal SENSE applied to the gate node have. Here, at least one sensing line SL may be disposed on the organic light emitting display panel 110. In other words, the sensing lines SL may be arranged so as to correspond to K (K? 2) sub-pixel columns, that is, one for every K data lines. That is, 4M / K sensing lines may be disposed in the organic light emitting display panel 110 having 4M sub-pixel columns. This sensing line SL is also referred to as a reference voltage line. One sensing line SL corresponds to K data lines, and the arrangement direction thereof may be varied. For example, the arrangement direction of the sensing lines SL may be the same as the data line direction, or may be the same as the gate line direction.

The second transistor SENT may be turned on to apply the reference voltage VREF supplied through the sensing line SL to the second node N2 of the driving transistor DRT.

The gate node of the first transistor SWT and the gate node of the second transistor SENT may be connected in common to the same gate line. In this case, the first scan signal SCAN and the second scan signal SENSE are the same gate signal. Alternatively, the gate node of the first transistor SWT and the gate node of the second transistor SENT may be connected to different gate lines. In this case, the first scan signal SCAN and the second scan signal SENSE are different gate signals.

On the other hand, each driving transistor DRT has a characteristic value such as a threshold voltage (Vth) and a mobility. In addition, each driving transistor DRT may be degraded according to driving time, and its characteristic value may be changed. Due to these points, the difference in the degree of deterioration between the driving transistors DRT occurs due to the difference in driving time between the driving transistors DRT in each sub-pixel, and a characteristic value deviation between the driving transistors DRT may also occur.

The deviation of the characteristic value between the driving transistors DRT may cause a luminance variation between the subpixels, which may cause a deterioration in image quality.

There may be not only a characteristic value deviation (threshold voltage deviation, mobility deviation) between the driving transistors DRT but also a characteristic value deviation (threshold voltage deviation, etc.) between the organic light emitting diodes OLED. In this specification, the characteristic value deviation between the driving transistors DRT and the characteristic value deviation between the organic light emitting diodes (OLED) are collectively referred to as "sub pixel characteristic value deviation ". In order to improve the image quality, it is necessary to compensate for the deviation of the sub-pixel characteristic values. Accordingly, the organic light emitting diode display 100 according to the present embodiments has a sub-pixel structure for sensing and compensating for a sub-pixel characteristic value variation as illustrated in FIG.

The OLED display 100 according to the present embodiment includes a sensing configuration for sensing a sub-pixel characteristic value deviation for each sub-pixel and a sub-pixel characteristic value deviation compensating for a sub-pixel characteristic value deviation using a result sensed by the sensing configuration Or a compensation configuration that provides

Referring to FIG. 15, the OLED display 100 according to the present embodiment includes a sensing structure for sensing a sub-pixel characteristic value deviation for each sub-pixel, (Not shown) for sensing a voltage of each sensing line SL, and at least one analog digital converter 210 for converting a voltage value sensed by the sampling unit into a digital value and outputting the digital value, ).

The sampling unit and the analog-to-digital converter 210 may constitute a sensing unit. The sensing unit may be included in the data driver 120. More specifically, at least one sensing portion may be included in each of the source driver integrated circuits included in the data driver 120. The sensing unit senses the voltage of each sensing line SL and converts the sensed voltage value into a digital value to output sensed data. The sensed data may be stored in the memory 220.

In addition, the organic light emitting diode display 100 according to the present embodiment may include a compensator 230 as a compensation structure for compensating a sub pixel property value deviation using the sensing result (sensing data) from the sensing unit . Based on the sensing data, the compensator 230 determines a compensation value for compensating the characteristic value deviation of each subpixel. The compensator 230 may correct the digital image data to be supplied to the corresponding subpixel according to the determined compensation value. The compensator 230 may be embedded in the timing controller 140. The timing controller 140 transmits the image data (DATA) corrected by the compensator 240 to the corresponding source driver integrated circuit of the data driver 120. [

A digital to analog converter (DAC) 240 of the source driver integrated circuit converts the image data (DATA) received from the timing controller 140 into a data voltage (VDATAi) corresponding to an analog voltage value, . As described above, using the analog-to-digital converter 210, the compensator 230 can effectively grasp the characteristic value of each subpixel at the digital level. The present invention is advantageous in that the analog digital converter 210 is implemented in the data driver 120 so that the sensing configuration of the sub pixel characteristic value is not required to be separately formed in the organic light emitting display panel 110 or the printed circuit board.

The mobility compensation of the driving transistor DRT will be briefly described with reference to FIG.

16, in order to sense the mobility corresponding to the current capability characteristic, the OLED display 100 applies a data voltage VDATAi to the first node N1 of the driving transistor DRT And initializes the first node N1 and the second node N2 of the driving transistor DRT by applying the reference voltage VREF to the second node N2 of the driving transistor DRT. At this time, the data voltage VDATAi applied to the first node N1 of the driving transistor DRT may be the data voltage VDATAs for the mobility sensing purpose.

The OLED display 100 initializes the first node N1 and the second node N2 of the driving transistor DRT to set the gate-source voltage of the driving transistor DRT for current conduction , And floats the first node N1 and the second node N2 of the driving transistor DRT. As a result, the voltages of the first node N1 and the second node N2 of the driving transistor DRT rise due to the current flowing in the driving transistor DRT. A current of a predetermined magnitude flows through the sensing line SL via the driving transistor DRT and the second transistor SENT during the voltage rise so that the line capacitor Cline Is charged. The charging rate of the line capacitor Cline may vary depending on the current capability of the driving transistor DRT, i.e., the mobility.

The sensing line SL and the analog-digital converter 210 are connected by the switch SW while the line capacitor Cline is being charged. At this time, the analog-to-digital converter 210 senses the voltage of the sensing line SL, that is, the voltage charged in the line capacitor Cline. The compensator 230 can relatively grasp the current capability (i.e., mobility) of the driving transistor DRT based on the sensing voltage Vsen input from the analog digital converter 210, The correction gain Gain can be obtained.

The above-described mobility sensing can proceed at a predetermined timing. For example, the mobility sensing can be performed in real time by allocating a predetermined time (e.g., blank time interval) during the screen driving. Here, the blank time is a time at which the writing of the image data is stopped.

FIG. 17 is a diagram for explaining the characteristic compensation concept of the driving transistor DRT according to the present embodiments. In FIG. 17, Vgs corresponding to a characteristic value deviation of two driving transistors DRT 1 and DRT 2 included in two subpixels A graph 410 of Ids for Vgs and a graph 420 of Ids for Vgs after compensating the threshold voltage deviation of the two driving transistors DRT 1 and DRT 2 and a graph 420 of Ids for the two driving transistors DRT 1 and DRT 2, Lt; RTI ID = 0.0 > Ids < / RTI > versus Vgs after compensating for both threshold voltage drift and mobility drift.

Referring to the graph 410 prior to compensating for threshold voltage drift and mobility drift in Figure 17, due to threshold voltage drift and mobility drift between the two driving transistors DRT 1 and DRT 2, The amount of current and the time point at which the driving current flows through the organic light emitting diode OLED may be different. Accordingly, luminance deviations occur in the two subpixels, and the image quality may deteriorate.

Referring to the graph 420 after compensating only the threshold voltage deviation in FIG. 17, even if the threshold voltage deviation between the two driving transistors DRT 1 and DRT 2 is compensated, the current between the two driving transistors DRT 1 and DRT 2 The ability difference, i. E. Mobility deviation, still exists. The amount of driving current flowing to the organic light emitting diode (OLED) in the two subpixels may be different due to the mobility deviation. Accordingly, luminance deviations occur in the two subpixels, and the image quality may deteriorate.

Referring to the graph 430 after compensating for both the threshold voltage deviation and the mobility deviation in FIG. 17, both the threshold voltage deviation and the mobility deviation between the two driving transistors DRT 1 and DRT 2 can be reduced. Thus, the luminance deviation in the two subpixels can be reduced and the image quality can be improved.

18 is a diagram exemplarily showing the components of the data voltage (VDATAs) and the respective voltage ranges for the mobility sensing use according to the present embodiments. FIG. 19 is a diagram showing the voltage change of the sensing line SL according to the sensing time during the mobility sensing according to the present embodiments. 20 and 21 are illustrations of voltage changes of the sensing line SL according to the sensing time during the mobility sensing according to the present embodiments.

Referring to FIG. 18, at the time of mobility sensing, a sensing data voltage VDATAs must be applied to the first node N1 of the driving transistor DRT. To this end, the corresponding source driver integrated circuit of the data driver 120 outputs data voltages (VDATAs) for sensing purposes. Upon sensing the mobility, each source driver integrated circuit can output data voltages (VDATAs) for sensing purposes within its output voltage range. The data voltage (VDATAs) for sensing purposes may include a voltage component (VDATAms) for mobility sensing and a voltage component (Vth_COMP) for threshold voltage compensation.

On the other hand, the threshold voltage sensing and compensation can be performed separately from the mobility sensing in a stage before the mobility sensing or after the mobility sensing.

Referring to FIG. 19, the analog digital converter 210 senses the voltage of the sensing line SL and converts the sensed voltage value into a digital value for the corresponding subpixel in the organic light emitting display panel 110. At this time, the analog-to-digital converter 210 has a range of conversion of the digital value to the analog voltage value (i.e., the ADC sensing range defined by the lower limit value DL and the upper limit value UL).

19, the slopes k1, k2, and k3 of the voltage of the sensing line SL increase as the sensing time increases in the voltage variation graph of the sensing line SL with respect to each driving transistor DRT ) ≪ / RTI > The current capability (mobility) of the driving transistor DRT in which the voltage of the sensing line SL is increased by the largest slope k3 is highest and the voltage of the sensing line SL is increased by the smallest slope k1 The current capability (mobility) of the driving transistor DRT is the lowest.

After the voltage of the sensing line SL changes for a predetermined time, the actually sensed voltage Vsen is higher or lower than the target sensing voltage REF. TARGET for eliminating or reducing the mobility deviation between the driving transistors DRT Mobility compensation can be performed so that the sensing voltage becomes the target sensing voltage REF. TARGET.

On the other hand, in order to accurately compensate the mobility, the distribution (mobility distribution) of the sensing voltage values for all the subpixels should be included within the ADC sensing range as in the first graph 710 of FIG. However, in the case of the subpixels including the driving transistor DRT having a low mobility (current capability), the distribution of the sensing voltage values (mobility distribution) deviates from the ADC sensing range as shown in the second graph 720 of FIG. It can be underflowed. In this case, mobility compensation may be distorted due to erroneous sensing results.

A situation in which the current capability of the driving transistor DRT is insufficient can be caused by designing the driving transistor DRT to have a small size for high resolution and high brightness. Therefore, the mobility distribution for all the subpixels in the organic light emitting display panel 110 can be divided into a normal mobility distribution such as that in the first graph 710 of FIG. 20 within a range that does not increase the size of the driving transistor DRT To be corrected. In order to correct the mobility distribution from the underflow state to the steady state, a method of increasing the sensing time as in the first graph 810 of FIG. 21 and a method of increasing the amount of current as shown in the second graph 820 of FIG. (A method of raising the bias voltage Vgs of the driving transistor DRT) can be considered.

However, the method of increasing the sensing time as in the first graph 810 of FIG. 21 is not effective due to the limitation of the sensing available time in consideration that the mobility sensing must be performed within a very short time during image driving . In the case of the method of increasing the amount of current (the method of raising the bias voltage Vgs of the driving transistor DRT) as in the second graph 820 of FIG. 21, each source driver integrated circuit has a higher data voltage (VDATAs), which limits the ability of the source driver integrated circuit of the data driver 120 (i.e., the output voltage range) to be increased.

Therefore, in a situation where the size of the driving transistor DRT is small and the current capability of the driving transistor DRT is inevitably short for high resolution and high programming, a low sensing data voltage VDATAs is used at a short sensing time It is important to accurately perform the mobility sensing. Therefore, in the present embodiments, it is possible to accurately measure the mobility compensation using the data voltages VDATAs for sensing a low mobility in a short sensing time in a situation where the current capability of the driving transistor DRT is insufficient to provide.

In the present embodiments, a plurality of sensing lines arranged in the organic light emitting display panel 110 may be arranged for each sub pixel column, or may be arranged for each of two or more sub pixel columns . In other words, one sensing line SL may be arranged per one subpixel row, and one sensing line SL may be arranged for every two or more subpixel rows. If one sensing line SL is arranged for every two or more sub-pixel columns, and a sensing line arrangement unit is K (K? 2), then a plurality of sensing lines are arranged for each K sub-pixel columns can do.

FIG. 22 is a view illustrating an arrangement of sensing lines in the organic light emitting display panel 110 according to the present embodiment. As shown in FIG. 14, when there are 4M sub pixel columns in the organic light emitting display panel 110, And one sensing line is arranged for every four sub-pixel columns. 22 shows a case in which the sensing line arrangement unit K is 4 and M (= 4M / K = 4M / 4 = M) sensing lines SL # 1, SL # 2, ) Are arranged in each of the four sub-pixel columns. In this way, when M sensing lines SL # 1, SL # 2, ..., SL #M are arranged for each of four sub-pixel columns, the M sensing lines SL # 1, SL # ..., and SL #M may be viewed as being arranged for each pixel column under a pixel structure in which one pixel P is composed of four sub-pixels SP. At this time, when viewed from one sub pixel row, one sensing line is commonly connected to four sub pixels. For example, the sensing line SL # 2 includes a subpixel (SP # 5) with i = 5, a subpixel (SP # 6) with i = 6, and a subpixel (SP # 7) and a sub-pixel (SP # 8) with i = 8.

Assuming that K = 4, that is, assuming that M sensing lines SL # 1, SL # 2, ..., SL #M are arranged for each of four sub-pixel columns, A mobility sensing method according to examples will be described.

23A is a diagram showing the relationship between four sub-pixels R (SP # m) connected in common to any one sensing line SL #m, m = 1, 2, ..., M, (SP # 4m-3), W (SP # 4m-2), G (SP # 4m-1) and B (SP # 4m). Here, the K subpixels (e.g., R, W, G, B) connected in common to one sensing line SL # m may constitute one pixel.

(SP # 4m-3), W (SP # 4m-2), G (SP # 4m-3) # 4m-1) and B (SP # 4m). More specifically, an arbitrary one sensing line SL #m, m = 1, 2, ..., M is connected to the second transistor SENT in each of the four subpixels R, W, G, And the sensing node Ns. (SP # 4m-3), W (SP # 4m-2), and G (SP # 4m-1) connected in common to any one sensing line SL # ), And B (SP # 4m) can be sensed.

23A is a diagram showing the relationship between four sub pixels R (SP # 4m-3), W (SP # 4m-2), G SP # 4m) in which only the W sub-pixel is subjected to the mobility sensing operation. In this case, four sub-pixels R (SP # 4m-3), W (SP # 4m-2), G The data voltage VDATAs_W for sensing purposes is applied only to the first node N1 of the driving transistor DRT of the W sub-pixel. The four sub pixels R (SP # 4m-3), W (SP # 4m-2), G (SP # 4m-1) and B The first node N1 of the driving transistor DRT of each of the R, G, and B sub-pixels in which the mobility sensing driving is not performed among the data voltages VDATAs for sensing purposes The data voltage VDATA_BLACK is applied. Here, the black data voltage VDATA_BLACK is a voltage capable of turning off the driving transistor DRT. The black data voltage VDATA_BLACK is a voltage value that is predefined such that a value obtained by subtracting the reference voltage VREF from the black data voltage VDATA_BLACK is equal to or smaller than the threshold voltage of the driving transistor DRT. For example, the black data voltage VDATA_BLACK may have a voltage value of 0V or, in some cases, a voltage value lower than 0V (for example, -0.5V, -1V, etc.) or a voltage value higher than OV ).

23A, the total current Ids_Total flowing to the sensing line SL # m for the mobility sensing is the same as the current Ids_W flowing in the W sub-pixel where mobility sensing is performed. Assuming that the number of subpixels in which the mobility sensing is simultaneously performed among the four subpixels R, W, G, and B connected in common to one sensing line SL # m is S, .

23B is a diagram showing the relationship between four sub pixels R (SP # 4m-3), W (SP # 4m-2), G SP # 4m), the sensing value and the compensation value are exemplarily shown in the mobility sensing step.

Referring to FIG. 23B, if the mobility characteristics of each of the R, G, B, and W subpixels are 1, 1.1, 0.9, and 1.2, the mobility compensation value of 1 is applied in the initial mobility sensing step. (SP # 4m-2), G (SP # 4m-1), and B (SP # 4m-3) connected in common to one sensing line SL # ), When 9V is applied to the corresponding subpixel as a data voltage for mobility sensing, the sensing voltage of each of the R, G, B and W subpixels during the measurement of the driving transistor characteristic value of 4 times Assuming that 9V, 8V, 9V, and 10V, the mobility sensing values of the R, G, B, and W subpixels are 1, 1.1, 0.9, and 1.2, respectively. Assuming that the new mobility compensation value is the inverse of the mobility sensing value, the new mobility compensation values of the R, G, B, and W subpixels are 1, 0.95, 1.05, and 0.91, respectively.

In the next mobility sensing step, the mobility compensation values of each of the R, G, B, and W subpixels are 1, 0.95, 1.05, and 0.91 calculated in the mobility sensing step of the previous step. G, B, and W when the sensed voltages of the R, G, B, and W subpixels are 9V, 7.6V, 9.45V, and 9.1V, respectively, The mobility sensing values of each of the subpixels are 1, 1, 1, 1. The new mobility compensation values of each of the R, G, B and W subpixels are 1, 0.95, 1.05 and 0.91.

As described above, when only one sub-pixel among four sub-pixels R, W, G, and B connected in common to one sensing line SL #m is sensed, the driving transistor DRT in each sub- The amount of current of the total current Ids_Total flowing to the sensing line SL # m is insufficient, so that mobility sensing and compensation may not be accurately performed.

For example, if the organic light emitting display 100 has the RWGB pixel structure and has a resolution of 3840 × 2160 and is connected to one sensing line SL #m in common among the four sub-pixels R, W, G, Assuming that only one sub-pixel is sensed, it takes 0.1 ms to sense only one sub-pixel, and a total of 0.1 ms x 2160 x 4 = 0.864 s is required for the mobility sensing. The rising speed of the voltage sensed through the sensing line is determined by the capacitance of the sensing line and the current of the driving transistor (Q = CV and Q = It). Compared with the organic light emitting display having the resolution of 1920 x 1080, the number of the intersections of the sensing lines for generating the parasitic capacitance is doubled, and the current of the driving transistor proportional to the pixel area Since the driving capability is about 1/4, the rising speed of the voltage sensed through the sensing line can be about 1/8.

As a result, the organic light emitting display device 100 having a high resolution has a low current driving capability, so that it is difficult to employ a method of sensing only one sub-pixel. In order to accurately perform mobility sensing using a low sensing data voltage (VDATAs) within a short sensing time, a method of simultaneously sensing at least two or more subpixels must be considered.

Therefore, the OLED display 100 according to the present embodiment includes four sub-pixels R, W, and R connected in common to one sensing line SL # m, as shown in FIGS. G, and B) can be simultaneously detected. That is, the number of subpixels S at which the mobility sensing is simultaneously performed may be 2 or more and K or less (2? S? K).

FIG. 24 is a diagram for explaining a case where two subpixels W and G among four subpixels R, W, G and B connected in common to one sensing line SL # m in the mobility sensing according to the present embodiments, (K = 4, S = 2). 25 is a diagram showing a relationship between three sub-pixels R, W, G and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # G) at the same time (K = 4, S = 3). 26 is a diagram for explaining a case where four sub-pixels R, W, G and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # G, B) at the same time (K = 4, S = 4).

24 to 26, S subpixels (two subpixels (G, B) in FIG. 24, three subpixels (R, G, B) (R, W, G, B) are subpixels selected as subpixels to be simultaneously sensed among K subpixels commonly connected to the sensing line SL # m.

Referring to FIGS. 24 to 26, in the organic light emitting display 100 according to the present embodiment, while sensing the driving transistor characteristic values, the sensing lines SL # m are connected in common in one subpixel row to each sensing line SL #m (S = 2 or 3 or 4) subpixels of S (2? S? K, K = 4 in the case of K = 4 subpixels R, W, G and B) DRT may simultaneously receive the sensing data voltage VDATAs not the black data voltage VDATA_BLACK to the first node N1.

To this end, the data driver 120 generates K (for example, K = 4) sub-pixels (e.g., R, W, G, and B) connected in common with each sensing line SL # (S = 2, 3 or 4) sub-pixels connected to each of the sub-pixels S (2? S? K, for example, K = 4)

The data driver 120 outputs the sensing data voltage to the data lines connected to the subpixels S (2? S? K, for example, when S = 2, 3 or 4, It is possible to output a predefined black data voltage as a data voltage for non-sensing to a data line connected to each of the four subpixels. In other words, the data driver 120 can output the data voltage for sensing with S data lines out of K data lines corresponding to one sensing line SL # m while sensing the driving transistor characteristic value, The black data voltage can be output to the KS data lines excluding the S data lines among the K data lines. Here, the S subpixels connected to the S data lines are selected as subpixels to be simultaneously sensed among the K subpixels.

The selection of the subpixel to be sensed may be performed by the timing controller 140. [ The timing controller 140 selects S subpixels to be simultaneously sensed among K subpixels connected in common to one sensing line and supplies the selected S subpixels to the selected S subpixels The data corresponding to the sub-pixel is made into data for sensing and provided to the data driver 120. In addition, the timing controller 140 controls the timing controller 140 so that the data voltages for sensing are supplied to the KS subpixels that are not the sensing targets among the K subpixels connected in common to one sensing line, And supplies the data to the data driver 120 as black data.

Here, the sensing data voltage (VDATAs) may be a data voltage for mobility sensing purposes or a data voltage for threshold voltage sensing purposes. In the following description, for the convenience of explanation, it is assumed that the sensing data voltage VDATAs is the data voltage for the mobility sensing purpose.

On the other hand, with respect to the fact that the sensing data voltage VDATAs is "simultaneously" applied to the first node N1 of the driving transistor DRT in each of the S subpixels, the driving transistor DRT The time point at which the sensing data voltage VDATAs is applied to the first node N1 may be completely the same, but actually, a slight difference in the application time point may occur. In this connection, the fact that the sensing data voltage VDATAs is "simultaneously" applied to the first node N1 of the driving transistor DRT in each of the S subpixels means that the voltage It may mean that the sensing data voltage VDATAs is applied to the first node N1 of the driving transistor DRT in each of the S subpixels in one sensing driving period for the sensing process.

Referring to FIG. 24, when S = 2, the data voltage VDATAs_W for sensing is applied to the first node N1 of the driving transistor DRT in the W sub-pixel, and at the same time, The data voltage VDATAs_G for sensing is also applied to the first node N1 of the transistor DRT.

In this case, the amount of current of the total current Ids_Total flowing to the sensing line SL # m is the sum of the current Ids_W flowing through the driving transistor DRT in the W sub-pixel and the driving transistor DRT in the G sub- (Ids_G). Therefore, the current capability (mobility) of the driving transistor DRT in each of the W subpixel and the G subpixel can be regarded as 1/2 of the total amount of current Ids_Total flowing to the sensing line SL #m. As a result, the mobility sensing time can be shortened to one-half of that for sensing one sub-pixel. That is, the current capability (mobility) of the driving transistor DRT in each of the W subpixel and the G subpixel is half of the current capability (mobility) grasped based on the sensing voltage Vsen of the sensing line SL #m , And the gain for compensating the mobility can be determined accordingly.

As shown in FIG. 24, when two subpixels are simultaneously sensed, problems such as an insufficient amount of current that occurs when only one subpixel is sensed and mobility sensing and compensation due to insufficient current are distorted can be solved.

25, when S = 3, the data voltage VDATAs_R for sensing purposes is applied to the first node N1 of the driving transistor DRT in the R sub-pixel, and the driving transistor The data voltage VDATAs_W for sensing is applied to the first node N1 of the driving transistor DRT and the data voltage VDATAs_G for sensing is applied to the first node N1 of the driving transistor DRT in the G sub- do. The black data voltage VDATA_BLACK is applied to the first node N1 of the driving transistor DRT in the B sub-pixel.

In this case, the amount of current of the total current Ids_Total flowing to the sensing line SL #m is the sum of the current Ids_R flowing through the driving transistor DRT in the R sub-pixel and the driving transistor DRT in the W sub- Is the same as the sum of the current Ids_W flowing in the G sub-pixel and the current Ids_G flowing through the driving transistor DRT in the G sub-pixel. Therefore, the current capability (mobility) of the driving transistor DRT in each of the R sub-pixel, the W sub-pixel and the G sub-pixel is set to 1/3 of the total current Ids_Total flowing to the sensing line SL # I will look. As a result, the movement sensing time can be shortened to 1/3 of that for sensing one sub-pixel. That is, the current capability (mobility) of the driving transistor DRT in each of the R subpixel, the W subpixel, and the G subpixel depends on the current capability (mobility) estimated based on the sensing voltage Vsen of the sensing line SL # And the gain for compensating the mobility can be determined accordingly.

On the other hand, the level of the data voltages for sensing applied to the first node N1 of the driving transistor may be controlled such that the currents flowing through the driving transistors of the S subpixels are equal to each other. The current driving capability (current capability) of the driving transistor DRT is proportional to the channel width W of the driving transistor DRT and inversely proportional to the channel length L. [ That is, the current driving capability (current capability) of the driving transistor DRT is determined by W / L. Thus, the magnitude of the data voltages for sensing applied to the first node N1 of the driving transistor may be determined by the size (W / L) of the driving transistor.

In this case, the current capability (mobility) of the driving transistor DRT in each of the R subpixel, the W subpixel, the G subpixel, and the B subpixel is grasped based on the sensing voltage Vsen of the sensing line SL #m Which corresponds to 1/3 of the current capability (mobility), and the gain for mobility compensation can be determined accordingly. However, if the current flowing through the driving transistor DRT of each of the three sub-pixels is m / n (m, n is larger than 0) than 1/3 of the current flowing through each driving transistor DRT of one sub- Real number). In addition, although the currents flowing through the driving transistors DRT of the three subpixels are described as being equal to each other, they may be different from each other.

As shown in FIG. 25, when three subpixels are simultaneously sensed, problems such as insufficient amount of current when sensing only one subpixel and distortion of mobility sensing and compensation due to current shortage can be solved more effectively .

Referring to FIG. 26, when S = 4, the data voltage VDATAs_R for sensing is applied to the first node N1 of the driving transistor DRT in the R sub-pixel, and the driving transistor The data voltage VDATAs_W for sensing is applied to the first node N1 of the driving transistor DRT and the data voltage VDATAs_G for sensing is applied to the first node N1 of the driving transistor DRT in the G sub- And the data voltage VDATAs_B for sensing is applied to the first node N1 of the driving transistor DRT in the B sub-pixel.

In this case, the amount of current of the total current Ids_Total flowing to the sensing line SL #m is the sum of the current Ids_R flowing through the driving transistor DRT in the R sub-pixel and the driving transistor DRT in the W sub- Is equal to the sum of the current Ids_W flowing through the driving transistor DRT in the G sub-pixel and the current Ids_B flowing through the driving transistor DRT in the B sub-pixel. Therefore, the current capability (mobility) of the driving transistor DRT in each of the R subpixel, the W subpixel, the G subpixel, and the B subpixel depends on the amount of current of the total current Ids_Total flowing to the sensing line SL # It looks like 1/4. That is, the current capability (mobility) of the driving transistor DRT in each of the R subpixel, the W subpixel, the G subpixel, and the B subpixel is determined based on the sensing voltage Vsen of the sensing line SL #m Which corresponds to 1/4 of the current capability (mobility), and the gain for mobility compensation can be determined accordingly.

On the other hand, the current Ids_1 flowing through the driving transistor of one subpixel is equal to the sum of the currents Ids_2, Ids_3 and Ids_4 flowing through the driving transistors of the other three subpixels, and the driving transistors of the other three subpixels The data voltages for mobility sensing may be applied to the first node N1 of the driving transistor in each subpixel so that the currents Ids_2, Ids_3, and Ids_4 flowing through the subpixels are equal to each other.

In this case, the amount of current of the total current Ids_Total flowing to the sensing line SL # m may be twice the current Ids_1 flowing through the driving transistor of one subpixel. Therefore, the current capability (mobility) of the driving transistor DRT in each of the R subpixel, the W subpixel, the G subpixel, and the B subpixel depends on the amount of current of the total current Ids_Total flowing to the sensing line SL # It looks like a half. That is, the current capability (mobility) of the driving transistor DRT in each of the R subpixel, the W subpixel, the G subpixel, and the B subpixel is determined based on the sensing voltage Vsen of the sensing line SL #m Corresponds to 1/2 of the current capability (mobility), and the gain for mobility compensation can be determined accordingly.

Instead, the current flowing through the driving transistor DRT of each of the remaining three sub-pixels is m / n (m, n is 0), not 1/3 of the current flowing through each driving transistor DRT of one sub- A larger mistake). For example, the current flowing through the driving transistor DRT of each of the remaining three subpixels is divided by a half (m = 1, n = 2) of the current flowing through each driving transistor DRT of one subpixel The amount of current of the total current Ids_Total flowing to the lower sensing line SL # m becomes 1 + (1/2) 3 = 2.5, so that the sensing time can be shortened to 0.4 times. The currents flowing through the driving transistors DRT of the remaining three subpixels may be different from each other although the currents flowing through the driving transistors DRT of one subpixel are equal to each other.

As shown in FIGS. 24 to 26, when two or more sub-pixels among four sub-pixels R, W, G, and B connected in common to one sensing line SL #m are simultaneously subjected to the movement sensing , It is possible to prevent the current from becoming insufficient due to insufficient current capability of the driving transistor DRT in each sub-pixel. The present invention is also applicable to a case where the driving transistor DRT has a small size and a current capability of the driving transistor DRT is insufficient for a high resolution and a high burn-out, a low mobility sensing data voltage VDATAs ) Can be used to accurately perform mobility sensing and compensation.

On the other hand, if two or more subpixels among the K subpixels (R, W, G, B) connected in common to one sensing line SL #m are simultaneously sensed as described above, The individual current capability of the transistor DRT may not be reflected, and some error may occur. As a result, the precision of the mobility sensing and compensation can be lowered.

In order to compensate for this, according to the present invention, two or more subpixels among the K subpixels commonly connected to each sensing line SL #m are simultaneously subjected to the movement sensing, and the movement degree sensing of each of the K subpixels is performed several times And the number of times of sensing the movement degree of each of the K subpixels can be made equal. That is, the driving transistor DRT in each of the K subpixels commonly connected to each sensing line SL # m outputs data voltages VDATAs that are not the black data voltage VDATA_BLACK the same number of times 1 node N1. In this way, the individual current capability of each driving transistor DRT can be more accurately sensed.

On the other hand, the potential difference (Vgs) between the gate node and the source node of the driving transistor DRT in each of the S subpixels may be the same when voltage sensing is performed on the sensing line.

27 is a timing chart for sensing two subpixels among four subpixels R, W, G, and B connected in common to one sensing line SL # m at the time of mobility sensing according to the present embodiments (S = 3) for sensing three subpixels simultaneously (S = 2) and for sensing four subpixels (S = 4) at the same time.

In FIG. 27, the number of times of sensing the mobility of each subpixel in accordance with the sensing progression order for S = 2 is as follows. During four mobility sensing times, four subpixels (R, W, G, B) The same two degrees of mobility sensing are performed. Referring to FIG. 27, the number of times of sensing the mobility of each subpixel in accordance with the sensing progression order for S = 3 can be calculated by dividing each of four subpixels (R, W, G, B) The movement sensing is performed three times in the same manner. Referring to FIG. 27, the number of times of sensing the mobility of each subpixel according to the sensing progression order in the case of S = 4 is shown in FIG. 27. In each of the four subpixels (R, W, G, B) The same four degrees of mobility sensing are performed.

As described above, in simultaneous sensing of two or more sub-pixels among four sub-pixels R, W, G, and B connected in common to one sensing line SL #m, four sub-pixels R , W, G, and B in accordance with the control of the timing controller 140.

As described above, in simultaneous sensing of two or more subpixels among K subpixels connected in common to one sensing line SL #m, mobility sensing for each of the K subpixels is S-progressed And the number of times of sensing the mobility of each of the K subpixels is also equalized, it is possible to more accurately sense the individual current capability of each driving transistor DRT.

The organic light emitting diode display 100 outputs sensing data voltages to the K data lines at the same number of times while sensing the driving transistor mobility of the K number of times, And outputs the converted value. The organic light emitting diode display 100 may further include a sensing data voltage output to each of the S data lines, a channel width of the transistor included in the S subpixels, a sensing data voltage output to each of the S data lines, The characteristic value of the driving transistor in each of the K subpixels is calculated on the basis of the inverse matrix of the KxK matrix and the sensing value of K times. The organic light emitting diode display 100 includes a K × K matrix reflecting the ratio of sensing data voltages output to each of the S data lines and a driving transistor Q 1 of each of the K subpixels, Can be calculated.

Specifically, during the measurement of the driving transistor mobility of K times, the data driver 120 outputs the sensing data voltages to the K data lines the same number of times, and the analog-digital converter 210 outputs one sensing line The compensator 230 compares the ratio of the amount of current flowing through the driving transistor included in the S subpixels or the ratio of the amount of current flowing through the channel of the driving transistor included in the S subpixels The mobility of the driving transistor in each of the K subpixels can be calculated based on the inverse matrix of the KxK matrix determined by the ratio of the width and the K sensed voltages.

In the mobility sensing according to the present embodiments, three sub-pixels (R, W, G) among four sub-pixels R, W, G and B connected in common to one sensing line SL # (K = 4, S = 3) in which a sensing method is applied at the same time, the 4 × 4 matrix expressed by reflecting the ratio of the sensing data voltage output to each of the three data lines and the 4 × 4 matrix A method of calculating the mobility of the driving transistor in each of the four subpixels will be described in detail. Hereinafter, the case where K = 4 and S = 3 will be exemplarily described, but the present invention can also be applied to all cases where S is small to K (e.g., K = 3, S = 2). Where S is K and K is a common factor of S and K is 1, K = 4, S = 3, or K = 3 and S = 2. When S is K-1, S and K are necessarily small. On the other hand, when K = 4 and S = 2, the common divisor of S and K is 2,

28A is a diagram showing a relationship between three sub-pixels R, W, G and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # G) at the same time (K = 4, S = 3).

Referring to FIG. 28A, when S is prime to K, the OLED display 100 simultaneously outputs the same sensing data voltage to the S data lines while measuring the driving transistor characteristic value of K times. Also, the organic light emitting diode display 100 outputs a predefined black data voltage defined as a data voltage for non-sensing to K-S data lines excluding S data lines from which data voltages for sensing are output among K data lines.

That is, when S = 3, the data voltage (VDATAs_R) for sensing the R subpixel, the data voltage (VDATAs_W) for sensing the W subpixel, and the data voltage (VDATAs_G) for sensing the G subpixel are 9V The black data voltage (VDATA_BLACK) of the B subpixel may be OV. On the other hand, when the data voltages for sensing the R, W, and B subpixels are not the same and the data voltages (VDATAs_W = 10V) for one subpixel, for example, May be greater than the data voltage for sensing (VDATAs_R = VDATAs_G = 9V).

During the measurement of the second driving transistor characteristic value in the same manner, three sub-pixels (R, G, B) among the four sub-pixels R, W, G and B connected in common to one sensing line SL # B) at the same time. Next, three sub-pixels W, G, and B among the four sub-pixels R, W, G, and B connected in common to one sensing line SL # B, three of the four sub-pixels R, W, G, and B connected in common to one sensing line SL # m during the measurement of the fourth driving transistor characteristic value And the sub pixels R, W, and G are simultaneously sensed.

The voltage sensed through one sensing line SL #m naturally comes from the mobility characteristics of three sub-pixels mixed. Instead of sensing R, G, B and W subpixels one by one, sensing three subpixels simultaneously such as R / G / B, G / B / W, B / W / R and W / R / Since the currents are mixed, the mobility sensing value can be expressed by a 4x4 matrix as shown in Equation 1 below.

 [Equation 1]

VsenRGB, VsenGBW, VsenBWR, and VsenWRG in Equation (1) are used for sensing one subpixel at the same time when sensing R / G / B, G / B / W, B / W / R, and W / And VsenR, VsenG, VsenB, and VsenW are the sensing values of the driving transistors included in the R, G, B, and W subpixels, respectively. Here, the order of R, G, B, W is an example, and the present invention is not limited to this order. The present invention can be applied to a structure in which R, G, B, and W are arranged in different orders.

Therefore, in order to obtain the actual mobility characteristic value for each of the R, G, B, and W subpixels at the sensed voltage, an inverse matrix as shown in the following Equation 2 can be used. By doing so, it is possible to accurately obtain the actual mobility characteristic value while reducing the sensing time.

 &Quot; (2) "

At this time, each matrix coefficient of each column in the 4x4 matrix in Equation (1), while measuring the driving transistor characteristic values of each column, is a current flowing through the driving transistor included in three sub-pixels of R, G, As shown in FIG.

As a generalization, each matrix coefficient of each column in the KxK matrix is expressed by the following equation (3), and the current flowing through the driving transistor of the corresponding subpixel among the S subpixels is multiplied by one sensing Divided by the amount of current of the total current flowing through the line.

 &Quot; (3) "

Xij = Ids_i / Ids_Total

In Equation (3), Xij denotes the value of the (i, j) matrix coefficient (i, j = 1 to K natural number) in the KxK matrix, and Ids_i denotes the value of the driving transistor of the i- And Ids_Total represents the amount of current of the total current flowing through one sensing line every time one driving transistor characteristic value is measured. As described above, the current or current driving ability flowing through the driving transistor of the sub-pixel can be determined by the size (W / L) of the driving transistor.

28B is a diagram showing a relationship between three sub-pixels R, W, G and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # G) are simultaneously applied, a sensing value and a compensation value are calculated in the mobility sensing step.

Referring to FIG. 28B, when the mobility characteristics of the R, G, B, and W subpixels are 1, 1.1, 0.9, and 1.2, respectively, as described above, mobility compensation values in the initial mobility sensing step are equal to 1 .

When sensing only one sub-pixel among four sub-pixels R, W, G, and B connected in common to one sensing line SL # m, if 9V is applied to the corresponding sub-pixel as a voltage for mobility sensing, G, B, and W subpixels when the sensed voltages of the R, G, B, and W subpixels are 9V, 8V, 9V, and 10V, respectively, Is 1, 1.068, 1.033, and 1.1.

Using the equation (2), the mobility sensing values of the R, G, B, and W subpixels are 1, 1.1, 0.9, and 1.2, respectively. Assuming that the new mobility compensation value is the inverse of the mobility sensing value, the new mobility compensation values of the R, G, B, and W subpixels are 1, 0.95, 1.05, and 0.91, respectively.

(R, W, B) out of four sub-pixels R, W, G, and B connected in common to one sensing line SL # m at the time of mobility sensing according to the present embodiments. (K = 4, S = 4) in which a method of simultaneously sensing the data voltages for the four sensing lines is applied to each of the four data lines, and a 4x4 matrix expressed by reflecting the ratio of the sensing data voltages output to each of the four data lines, A method of calculating the mobility of the driving transistor in each of the four subpixels will be described in detail. Hereinafter, the case where K = 4 and S = 4 is exemplarily explained, but the present invention can be similarly applied to all cases where S is K (for example, K = 3, S = 3).

29A is a diagram showing the relationship between four sub-pixels R, W, G and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # G, B) are simultaneously applied (K = 4, S = 4). FIG. 29B is a diagram showing a relationship between four sub-pixels R, W, G and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # G, and B are simultaneously applied to the sensing signal, the sensing value and the compensation value are exemplarily shown in the mobility sensing step.

29A, when S is K, the organic light emitting diode display 100 determines that the current flowing through the driving transistor of one sub-pixel is different from that of the other K-1 sub- And the currents flowing through the driving transistors of the other K-1 sub-pixels are equal to each other, and simultaneously output the sensing data voltages to the S data lines.

That is, when S = 4, for example, the current Ids_R flowing through the driving transistor of the R sub-pixel is the current Ids_W, Ids_G, Ids_B flowing through the driving transistors of the other three W, And the currents flowing through the driving transistors of the other three sub-pixels are equal to each other (Ids_W = Ids_G = Ids_B). The data voltages VDATAs_R and the mobility of the W subpixels The data voltages VDATAs_W for sensing purposes, the black data voltages VDATAs_B for the B subpixels, and the data voltages VDATAs_G for the mobility sensing of the G subpixels can be determined. For example, the data voltages (VDATAs_R) for sensing the mobility of the R subpixels and the data voltages (VDATAs_W) for sensing the mobility of the W subpixels, the black data voltages (VDATAs_B) of the B subpixels, The data voltages (VDATAs_G) for sensing purposes may be 9V, 5.77V, 5.2V, and 4.62V, respectively.

In the same manner, four sub-pixels R, W, G, and B of four sub-pixels R, W, G, and B connected in common to one sensing line SL # , W, G, B) are simultaneously sensed.

The voltage sensed through one sensing line SL #m naturally comes into mobility characteristics of four sub-pixels. Instead of sensing R, G, B, and W subpixels one by one, sensing the R, W, G, and B subpixels at the same time causes the currents to be mixed so that the mobility sensing value is a 4 × 4 matrix .

 &Quot; (4) "

V'senR, V'senG, V'senB, and V'senW in Equation (4) represent currents flowing through the driving transistors of the three subpixels whose currents flow through the driving transistors of the R, G, B, And a sensing voltage (Vsen) sensed through one sensing line (SL # m) when a data voltage for mobility sensing is applied so that the currents flowing through the driving transistors of the other three sub-pixels are equal to each other, to be. VsenR, VsenG, VsenB, and VsenW are the mobility sensing values of the driving transistors included in the R, G, B, and W subpixels. Here, the order of R, G, B, W is an example, and the present invention is not limited to this order. R, G, B, and W are also included in the present invention. Therefore, the 4x4 matrix representing the mobility sensing value may be a matrix in which the row order of the matrix expressed by Equation (4) is changed.

In order to obtain the actual mobility characteristic value at the sensed voltage, an inverse matrix as shown in Equation (5) below can be used. By doing so, it is possible to accurately obtain the actual mobility characteristic value while reducing the sensing time.

 &Quot; (5) "

As described above, the current flowing through the driving transistor DRT of each of the remaining three subpixels is m / n (m, n), not 1/3 of the current flowing through each driving transistor DRT of one subpixel, n is a real number greater than 0), for example, 1/2 (m = 1, n = 2). The currents flowing through the driving transistors DRT of the remaining three subpixels may be different from each other although the currents flowing through the driving transistors DRT of one subpixel are equal to each other. In general, since the influence of noise increases when the matrix coefficient increases, the current flowing through each driving transistor DRT of one subpixel is minimized and the driving transistor DRT of each of the remaining three subpixels It may be preferable to make the flowing currents equal to each other.

In addition, in the method of simultaneously sensing all the K subpixels, there is no such problem as a leakage current because there is no subpixel to which a black data voltage is applied.

In this case, each matrix coefficient in each column in the 4x4 matrix in Equation (4) is a ratio of the amount of current flowing through the driving transistor included in the R, G, B, and W subpixels . For example, if the current flowing through the driving transistor DRT of each of the remaining three subpixels is 1/2 of the current flowing through each driving transistor DRT of one subpixel, 6 can be expressed as.

 &Quot; (6) "

As a generalization, each matrix coefficient of each column in the KxK matrix is expressed by the following equation (7): " (7) " Divided by the amount of current of the total current flowing through the line.

 &Quot; (7) "

Xij = Ids_i / Ids_Total

In Equation (7), Xij denotes the value of the (i, j) matrix coefficient (i, j = 1 to K natural number) in the KxK matrix and Ids_i denotes the driving transistor of the i < th & And Ids_Total represents the amount of current of the total current flowing through one sensing line every time one driving transistor characteristic value is measured.

In the above embodiments, the S sub-pixels among the K sub-pixels connected to one sensing line are simultaneously sensed. Hereinafter, M sub-pixels among the L sub-pixels connected simultaneously to one sensing line and one data line A method of simultaneously sensing sub-pixels will be described.

Specifically, the L gate lines are connected to the L subpixels, and the gate driver 130 simultaneously scan (M (2? M? L) gate lines among the L gate lines during the measurement of the drive transistor characteristic values And outputs a signal. The data driver 120 outputs a sensing data voltage to one of the K (K? 1) data lines corresponding to one sensing line while measuring the driving transistor characteristic value. The analog-to-digital converter 220 is electrically connected to one sensing line and senses the voltage of one sensing line, converts the sensed voltage into a digital value, and outputs the digital value. The compensator 230 performs a compensation process to compensate the characteristic of the driving transistor in each of the M subpixels connected to the L gate lines based on the sensing value of one sensing line identified from the digital value received from the analog digital converter .

At this time, while measuring the driving transistor characteristic value of L times, the analog digital converter 210 senses the voltage of one sensing line L times and converts it into a digital value, and outputs the digital value, and the compensator 230 includes The characteristic value of the driving transistor in each of the L subpixels is calculated based on the inverse matrix of the L x L matrix determined by the ratio of the amount of current flowing through the driving transistor and the L sensed voltage.

The M subpixels connected to the M gate lines simultaneously outputting the scan signal are selected as the subpixels to be simultaneously sensed among the L subpixels connected to the L gate lines each time the L drive transistor characteristic values are measured. During the measurement of the drive transistor characteristic value of L times, the data driver 120 selects one of the K data lines, which is defined as a data voltage for non-sensing in K-1 data lines excluding one data line for outputting a sensing data voltage And outputs a black data voltage. The compensator 230 includes an L x L matrix expressed by reflecting the ratio of the sensing data voltage outputted to the one data line L times and a driving transistor Q 1 in each of the L subpixels, Is calculated.

Hereinafter, when L is 4 and M is 3, the case where the data driver 120 simultaneously outputs the same sensing data voltage on one data line while measuring the driving transistor characteristic value of L times will be exemplified . Hereinafter, the case where L = 4 and M = 3 is exemplarily described, but the same can be applied to all cases where M is L-1 (for example, L = 3, M = 2).

30 shows the relationship between four sub-pixels (SP # (4m, j + 1), SP # (4m, j) (SP # (4m, j + 1), SP # (4m, j + 2), SP # (L = 4, M = 3). In FIG. 30, M (M = 3) subpixels are connected to the sensing line SL # (L = 4) subpixels connected in common to a plurality of subpixels connected in common to a plurality of subpixels.

Referring to FIG. 30, in the organic light emitting diode display 100 according to the present embodiment, during the measurement of the driving transistor characteristic value, that is, during the sensing operation, each sensing line SL # (4m, j + 1), SP # (4m, j + 2), SP # (4m, j + 3), and SP # (4m, j + 1) and SP # (4m, j + 2) among M (m = 2) , The driving transistor DRT in each of the subpixels SP # (4m, j + 3) can receive the sensing data voltage VDATAs simultaneously to the first node N1. (4m, j + 1), SP # 4m, j + 2, SP # 4m, j + 3 and SP # 4m, j + 4 may be subpixels of the same color.

(4m, j + 1), SP # (4m, j + 2), SP # (4m, j + 3), SP # (4m, j + 1), SP # (4m, j + 2), SP # (4m, j + 3), SP # May be referred to as R1, R2, R3, and R4 subpixels, respectively. The present invention is equally applicable to subpixels of other colors.

During the measurement of the drive transistor characteristic value, the gate driver 130 outputs M (for example, L = 1) among the L (e.g., L = 4) sub-pixels R1, R2, R3 and R4 connected in common with each sensing line SL # SCAN (j + 1), SCAN (j + 2), and SCAN (j + 3) to the gate lines connected to the sub pixels R1, R2, and R3. While the sensing data voltage is output to the data lines connected to the M subpixels, the gate driver 130 outputs the scan signal SCAN (j + 4) to the gate line connected to each of the LM subpixels Do not. Here, the M subpixels connected to the M gate lines are selected as the subpixels which are simultaneously sensed among the L subpixels connected to the L gate lines corresponding to one sensing line. The selection of the subpixel to be sensed may be performed by the timing controller 140. [

30, the amount of current of the total current Ids_Total flowing to the sensing line SL #m is the sum of the current Ids_1 flowing through the driving transistor DRT in the R1 sub-pixel and the current Ids_1 flowing through the driving transistor DRT And the current Ids_3 flowing through the driving transistor DRT in the R3 sub-pixel. In this case, the current capability (mobility) of the driving transistor DRT in the R1 subpixel, the R2 subpixel, and the R3 subpixel is 1/3 of the total current Ids_Total flowing to the sensing line SL # . As a result, it is possible to shorten the mobility sensing time by a factor of three. That is, the current capability (mobility) of the driving transistor DRT in each of the R1 subpixel, the R2 subpixel, and the R3 subpixel depends on the current capability (mobility) estimated based on the sensing voltage Vsen of the sensing line SL # And the gain for compensating the mobility can be determined accordingly.

Accordingly, even when the size of the driving transistor (DRT) is small and the current capability of the driving transistor (DRT) is inevitably insufficient for a high resolution and a high burn-out, ) Can be used to accurately perform mobility sensing and compensation.

FIG. 31 is a diagram for explaining a case where four sub pixels (SP # (4m, j + 1), SP # (4m, j + (SP # (4m, j + 1), SP # (4m, j + 2), SP # SP # (4m, j + 3)) are applied to a sensing value and a compensation value in a mobility sensing step.

30 and 31, when M = 3, the data voltages VDATAs for sensing the mobility of the R1, R2, R3, and R4 subpixels in one data line during the measurement of the driving transistor characteristic values of four times, R2 and R3 among the four sub-pixels R1, R2, R3 and R4 connected in common to one sensing line SL # m at the same time.

The voltage sensed through one sensing line SL #m naturally comes into mobility characteristics of the three sub-pixels R1, R2 and R3. Instead of sensing each subpixel one by one, sensing the subpixels of R1 / R2 / R3, R2 / R3 / R4, R3 / R4 / R1 and R4 / R1 / R2 simultaneously, Can be represented by a 4x4 matrix as shown in Equation (8).

 &Quot; (8) "

Vsen 123, Vsen 234, Vsen 341, and Vsen 412 in Equation (8) represent one sensing line (SL #) when simultaneously sensing R1 / R2 / R3, R2 / R3 / R4, R3 / m, and Vsen1, Vsen2, Vsen3, and Vsen4 are mobility sensing values of the driving transistors included in the R1, R2, R3, and R4 subpixels. Here, the order of 1, 2, 3, 4 means a sensing sequence and does not mean a sub-pixel position on the organic light emitting display panel 110. In other words, the 4x4 matrix representing the mobility sensitivity value may be a matrix in which the row order of the matrix expressed by Equation (8) is changed.

In order to obtain the actual mobility characteristic value at the sensed voltage, an inverse matrix as shown in Equation (9) below may be used. By doing so, it is possible to accurately obtain the actual mobility characteristic value while reducing the sensing time.

 &Quot; (9) "

The matrix coefficients of each column in the 4x4 matrix in Equation (9) are set such that the currents flowing through the driving transistors included in the three sub-pixels of the R1, R2, R3, and R4 sub-pixels It is determined by the ratio of the amount of current.

In general, each matrix coefficient of each column in the L x L matrix is expressed by the following equation (10): " (10) " Divided by the amount of current of the total current flowing through the line.

 &Quot; (10) "

Xij = Ids_j / Ids_Total

In Equation (10), Xij denotes a value of an (i, j) matrix coefficient (natural number of i, j = 1 to K) in an LxL matrix, Ids_i denotes a value of M Refers to the current flowing through the driving transistor of the j-th subpixel among the subpixels, and Ids_Total represents the amount of current of the total current flowing through one sensing line every time one driving transistor characteristic value is measured.

It has been described above that the mobility sensing and the compensation are performed according to the present embodiments. Hereinafter, threshold voltage sensing and compensation according to the present embodiment will be described.

FIG. 32 is a view for explaining the threshold voltage sensing principle for the driving transistor DRT of the OLED display 100 according to the present embodiments. Referring to FIG.

32, the principle of threshold voltage sensing is that the first node N1 of the driving transistor DRT, for example the voltage Vs of the source node, follows the voltage Vg of the gate node N2 After the voltage Vs of the source node N1 of the driving transistor DRT is settled, the source node N1 of the driving transistor DRT is turned on, And senses the voltage Vs as the sensing voltage Vsense. Then, the threshold voltage variation of the driving transistor DRT is grasped based on the sensing voltage Vsense. The voltage Vg applied to the gate node N2 of the driving transistor DRT is the data voltage Vdata supplied from the corresponding source driver integrated circuit.

The threshold voltage sensing of the driving transistor DRT is characterized in that the sensing speed is slow because it must wait until the driving transistor DRT is turned off. Therefore, the threshold voltage sensing mode is also referred to as a slow mode (S-Mode). The present invention proposes a method of simultaneously sensing a plurality of sub-pixels in order to reduce the sensing time required for threshold voltage sensing of the driving transistor DRT. In other words, with reference to FIGS. 24 to 31, the present invention can simultaneously detect the threshold voltages of the driving transistors of two or more subpixels in the same or similar manner as the method of simultaneously sensing the mobility of the driving transistors of two or more subpixels have.

The voltage sensed through one sensing line SL #m naturally comes to have a mixed threshold voltage characteristic of S sub-pixels. When sensing the threshold voltages of S subpixels at the same time, overall nonlinearity or nonlinearity is large as shown in FIG. 33, unlike the above-described mobility sensing. The nonlinear characteristic shown in FIG. 33 when sensing the threshold voltages of a plurality of subpixels at the same time is that the difference between the threshold voltage change amount? Vth, that is, the difference between the current actual threshold voltage Vth and the finally sensed threshold voltage Vth is small It stands out in subpixels. Non-linearity can degrade the accuracy of sensing and compensation.

In order to reduce the non-linearity, the OLED display 100 includes a K × K matrix that reflects the ratio of the size of the driving transistors included in the S sub-pixels, and a K × K matrix The threshold voltage of the driving transistor in each of the subpixels can be calculated. The threshold voltage sensing is affected by the size of the driving transistor. The threshold voltage sensing is mainly influenced by the channel width W of the driving transistor when the channel length L of the driving transistor is the same. The present invention can calculate a KxK matrix reflecting the ratio of the size of the driving transistor when the channel length L of the driving transistor is different.

The number S of subpixels to be simultaneously sensed can be set to a number of K or less. The number S of sub-pixels to be simultaneously sensed may be set to be the same in each K, or may be different in at least one of K times. FIGS. 34A to 34D and FIG. 37 illustrate examples in which the number of subpixels S to be simultaneously sensed is set to be the same in each K, and in FIGS. 35A to 35D and FIGS. 36A to 36D, And the number S of pixels is set differently at least once in K times.

The present invention is not limited to this exemplary configuration.

For example, in the present invention, two subpixels (R / W, W / G, B) out of four subpixels (R, W, G, B) connected in common to one sensing line SL # W / B, and R / G). (R / W, W / G, G / B) among four subpixels (R, W, G, B) connected in common to one sensing line SL # B, and R / W / G). The present invention is applicable to one or two subpixels W, G, R / W, G / B among four subpixels (R, W, G, B) connected in common to one sensing line SL # B) may be applied to a method of simultaneously sensing the object. R / G, G / B) among three subpixels (R, G, B) connected in common to one sensing line (SL # m) As shown in FIG. G / B, R / G / B among three subpixels (R, G, B) connected in common to one sensing line (SL # m) B) may be applied to a method of simultaneously sensing the object. In addition, various modifications are possible.

34A to 34D are diagrams for explaining a case where three subpixels (R, W, G and B) among four subpixels (R, W, G, B) connected in common to one sensing line SL # (K = 4, S = 3) are simultaneously sensed on the basis of R / W / G, W / G / B, G / B / R and B / R / W.

34A to 34D, while measuring the driving transistor characteristic values four times, the organic light emitting diode display 100 simultaneously outputs the same data voltages for sensing with three data lines. In addition, the organic light emitting diode display 100 outputs a black data voltage defined as a data voltage for sensing as one data line excluding three data lines from which data voltages for sensing are output among four data lines.

As shown in FIG. 34A, during the measurement of the first drive transistor characteristic value, the data voltage VDATAs_R for sensing the R subpixel, the data voltage VDATAs_W for sensing the W subpixel, the data voltage (VDATAs_G) of 5V and the black data voltage (VDATA_BLACK) of the B subpixel may be OV. W, G) among the four sub-pixels R, W, G, and B connected in common to one sensing line SL # m during the measurement of the first driving transistor characteristic value Sensing at the same time.

As shown in FIG. 34B, during the measurement of the second driving transistor characteristic value, the data voltage (VDATAs_W) for sensing the W subpixel, the data voltage (VDATAs_G) for the sensing use of the G subpixel, (VDATAs_B) of 5V and the black data voltage (VDATA_BLACK) of the R subpixel may be OV. Three subpixels W, G, and B among four subpixels R, W, G, and B connected in common to one sensing line SL # m during the measurement of the second driving transistor characteristic value Sensing at the same time.

As shown in FIG. 34C, during the measurement of the third drive transistor characteristic value, the data voltage (VDATAs_R) for sensing use of R subpixels, the data voltage (VDATAs_G) for sensing use of G subpixels, (VDATAs_B) of 5V and the black data voltage (VDATA_BLACK) of the W subpixel may be OV. Three subpixels R, G, and B among four subpixels R, W, G, and B connected in common to one sensing line SL # m during the measurement of the third driving transistor characteristic value Sensing at the same time.

As shown in FIG. 34D, during the measurement of the fourth drive transistor characteristic value, the data voltage (VDATAs_R) for sensing use of the R subpixel, the data voltage (VDATAs_W) for sensing use of the W subpixel, (VDATAs_B) of 5V and the black data voltage (VDATA_BLACK) of the G subpixel may be OV. W, B among the four sub-pixels R, W, G, and B connected in common to one sensing line SL # m during the measurement of the fourth driving transistor characteristic value, Sensing at the same time.

R / G / B, G / B / W, B / W / R, and W / R / G are used instead of sensing the R, G, B and W subpixels one by one as shown in FIGS. 34A to 34D When three subpixels are sensed at the same time, currents are mixed so that the threshold voltage sensing value can be expressed by a 4x4 matrix as shown in Equation (11) below.

 &Quot; (11) "

VsenRGB, VsenGBW, VsenBWR, and VsenWRG in Equation (11) are used for sensing one sub-pixel of the R, G / B, G / B / W, B / W / And VsenR, VsenG, VsenB, and VsenW are the threshold voltage sensing values of the driving transistors included in the R, G, B, and W subpixels. W1, W2, W3, and W4 denote the channel widths of the driving transistors included in the R, G, B, and W subpixels, respectively. Here, the order of R, G, B, W is an example, and the present invention is not limited to this order. R, G, B, and W are arranged in a different order. In other words, the 4x4 matrix representing the threshold voltage sensing value may be a matrix in which the row order of the matrix expressed by Equation (11) is changed.

When the channel widths W1, W2, W3 and W4 of the R, G, B and W driving transistors are 26 mu m, 18 mu m, 24 mu m and 14 mu m and RGB, GBW, BWR and WRG subpixels are simultaneously sensed, Can be represented by a matrix as shown in Equation (12) below.

 &Quot; (12) "

Therefore, in order to obtain the actual threshold voltage characteristic value at the sensed voltage, the following inverse matrix can be used.

 &Quot; (13) "

Thus, the actual threshold voltage characteristic value can be accurately obtained while reducing the threshold voltage sensing time.

35A to 35D are diagrams for explaining a case where two or three sub-pixels R, W, G, and B among four sub-pixels R, W, G and B connected in common to one sensing line SL # (K = 4, S = 2 or 3) in which the subpixels R / W, W / G, W / B and R / G /

Referring to FIGS. 35A to 35D, while measuring the driving transistor characteristic values four times, the organic light emitting diode display 100 simultaneously outputs the same sensing data voltage with two or three data lines. In addition, the organic light emitting diode display 100 may include one or two data lines excluding two or three data lines for outputting sensing data voltages among four data lines, and a black data voltage defined as a data voltage for sensing Output.

35A, the data voltages (VDATAs_R) for sensing use of R subpixels and the data voltages (VDATAs_W) for sensing use of W subpixels are 5V and the voltages of G and B subpixels The black data voltage (VDATA_BLACK) may be OV. (R, W) among the four sub-pixels R, W, G, and B connected in common to one sensing line SL #m during the measurement of the first driving transistor characteristic value do.

As shown in FIG. 35B, during the measurement of the second driving transistor characteristic value, the data voltage (VDATAs_W) for sensing the W subpixel and the data voltage (VDATAs_G) for sensing the G subpixel are 5V each, The black data voltage (VDATA_BLACK) may be OV. During the measurement of the second driving transistor characteristic value, two sub-pixels W and G of four sub-pixels R, W, G and B connected in common to one sensing line SL # m are simultaneously sensed do.

As shown in FIG. 35C, during the measurement of the third drive transistor characteristic value, the data voltage (VDATAs_W) for sensing the W subpixel and the data voltage (VDATAs_B) for sensing the B subpixel are 5V each, The black data voltage (VDATA_BLACK) may be OV. During the measurement of the third drive transistor characteristic value, two sub-pixels W and B of four sub-pixels R, W, G and B connected in common to one sensing line SL # m are simultaneously sensed do.

As shown in FIG. 35D, during the measurement of the fourth drive transistor characteristic value, the data voltage (VDATAs_R) for sensing use of the R subpixel, the data voltage (VDATAs_G) for sensing use of the G subpixel, (VDATAs_B) of 5V and the black data voltage (VDATA_BLACK) of the W subpixel may be OV. Three subpixels (R, G, B) among the four subpixels R, W, G, and B connected in common to one sensing line SL #m during the measurement of the fourth driving transistor characteristic value Sensing at the same time.

As shown in FIGS. 35A to 35D, instead of sensing R, G, B, and W subpixels one by one, two or three sub-pixels such as R / W, W / G, W / B and R / G / When the pixels are sensed at the same time, the current is mixed. When the channel widths of the R, W, G, and B driving transistors are 22 μm, 14 μm, 22 μm, and 17 μm, respectively, the threshold voltage sensing value can be expressed by a 4 × 4 inverse matrix as shown in Equation (14).

 &Quot; (14) "

VsenRW, VsenWB, and VsenRGB are R / W, W / G, and Vsc, respectively, in the formula (14), VsenR, VsenG, VsenB, and VsenW are the threshold voltage sensing values of the driving transistors included in the R, W / B, and R / G / B sub-pixels are simultaneously sensed by one sensing line SL #m. Thus, the actual threshold voltage characteristic value can be accurately obtained while reducing the threshold voltage sensing time.

36A to 36D are diagrams for explaining a case where one or two of four sub-pixels (R, W, G, B) connected in common to one sensing line SL # m (K = 4, S = 1 or 2) simultaneously on the subpixels W, R / G, G / B and R /

Referring to FIGS. 36A to 36D, while measuring the driving transistor characteristic values four times, the organic light emitting diode display 100 simultaneously outputs the same sensing data voltage with one or two data lines. In addition, the organic light emitting diode display 100 may further include two or three data lines excluding one or two data lines from which data voltages for sensing are output, among four data lines, and a black data voltage defined as a data voltage for non- Output.

36A, the data voltage (VDATAs_W) for sensing the W subpixel is 5V and the black data voltage (VDATA_BLACK) of the R, G, and B subpixels may be OV while measuring the first driving transistor characteristic value. One sub-pixel W of four sub-pixels R, W, G, and B connected in common to one sensing line SL # m is sensed during the measurement of the first driving transistor characteristic value.

36B, during the measurement of the second driving transistor characteristic value, the data voltage (VDATAs_R) for sensing use of the R subpixel and the data voltage (VDATAs_G) for sensing use of the G subpixel are 5V each and the W The black data voltage (VDATA_BLACK) may be OV. During the measurement of the second driving transistor characteristic value, two sub-pixels R and G of four sub-pixels R, W, G and B connected in common to one sensing line SL # m are simultaneously sensed do.

During the measurement of the third driving transistor characteristic value as shown in FIG. 36C, the data voltage (VDATAs_G) for sensing use of the G subpixel and the data voltage (VDATAs_B) for sensing use of the B subpixel are 5V each, The black data voltage (VDATA_BLACK) may be OV. During the measurement of the third driving transistor characteristic value, two sub-pixels (G, B) of four sub-pixels R, W, G and B connected in common to one sensing line SL # do.

36D, the data voltages (VDATAs_R) for sensing the R subpixels and the data voltages (VDATAs_B) for the sensing purposes of the B subpixels are 5V each while measuring the driving transistor characteristic values of the W and G subpixels The black data voltage (VDATA_BLACK) may be OV. During the measurement of the fourth drive transistor characteristic value, two sub-pixels R and B of four sub-pixels R, W, G and B connected in common to one sensing line SL # m are simultaneously sensed do.

Instead of sensing R, G, B and W subpixels one by one, as shown in FIGS. 36A to 36D, one or two subpixels, such as W, R / G, G / B and R / When sensing, the current is mixed. When the channel widths of the R, W, G, and B driving transistors are 22 μm, 14 μm, 22 μm, and 17 μm, respectively, the threshold voltage sensing value can be expressed by a 4 × 4 inverse matrix as shown in Equation 15 below.

 &Quot; (15) "

VsenR, VsenG, VsenB, and VsenW are the threshold voltage sensing values of the driving transistors included in the R, G, B, and W subpixels and VsenW, VsenRG, VsenGB, and VsenBR are W, R / B, and B / R subpixels are simultaneously sensed by one sensing line SL #m. Thus, the actual threshold voltage characteristic value can be accurately obtained while reducing the threshold voltage sensing time.

37 shows an example in which a method of simultaneously sensing four sub-pixels R, W, G, and B connected in common to one sensing line SL # m at the time of threshold voltage sensing according to the present embodiments is shown (K = 4, S = 4). Hereinafter, the case where K = 4 and S = 4 is exemplarily explained, but the present invention is equally applicable to all cases where S is not relatively small to K (for example, K = 3, S = 3).

Referring to FIG. 37, as another method for solving the non-linear characteristic of the threshold voltage change amount? Vth, while the characteristic value of the drive transistor K is measured, the data driver sets the data voltage for sensing At the same time, the sensing data voltage output to one of the S data lines is made larger than the remaining sensing data voltage output to the remaining one. For example, when sensing R, G, B, and W subpixels at the same time, a sensing data voltage may be made larger than the remaining three sensing voltages to differentiate the sensing voltage from the sensing voltage. At this time, the influence on the sensed threshold voltage change amount (? Vth) has a nonlinear characteristic, so the coefficient must be determined through experiments.

When K is 4, a K × K matrix reflecting a nonlinear influence on the channel width of the driving transistor and the sensed threshold voltage variation (ΔVth) can be expressed by the following equation (16).

 &Quot; (16) "

,

In Equation (16)

,

,

,

,

,

,

이고, W1 내지 W4는 각각 1번째 내지 4번째 서브픽셀에 포함되는 구동 트랜지스터의 채널 폭을 의미하며, Xmain은 센싱된 전압에 주로 영향을 주는 서브픽셀이 센싱된 전압에 영향을 주는 정도이며, Xsub는 다른 서브픽셀들이 센싱된 전압에 영향을 주는 정도를 의미한다. 여기서 R, G, B, W라는 순서는 일 예이고 본 발명은 이 순서에 한정되지 않는다. R, G, B, W를 다른 순서로 한 구조도 포함한다. 다시 말해 문턱전압 센싱값을 표현한 4×4 행렬은 수학식 14로 표현되는 행렬의 행 순서를 바꾼 행렬일 수 있다.

,

,

,

,

,

, W1 to W4 denote the channel widths of the driving transistors included in the first to fourth subpixels, Xmain is the degree to which the subpixel mainly influencing the sensed voltage affects the sensed voltage, Xsub Refers to the degree to which other subpixels affect the sensed voltage. Here, the order of R, G, B, W is an example, and the present invention is not limited to this order. R, G, B, and W are arranged in a different order. In other words, the 4x4 matrix representing the threshold voltage sensing value may be a matrix in which the row order of the matrix expressed by Equation (14) is changed.

If the data voltage of the subpixel mainly affecting is 5V and the data voltage of the other subpixels is 4.5V, the influence of the subpixel mainly affecting the simulation result is 67% and the remaining three are 11% each I could confirm. At this time, the sensing time of the threshold voltage may be about 1/2.

When the channel widths W of the driving transistors of R, G, B and W are 26 μm, 18 μm, 24 μm and 14 μm, the threshold voltage sensing value can be expressed by a matrix as shown in Equation 17 below.

 &Quot; (17) "

Therefore, in order to obtain the actual threshold voltage characteristic value at the sensed voltage, the following inverse matrix can be used. By doing so, it is possible to accurately obtain the actual threshold voltage characteristic value while reducing the sensing time.

 &Quot; (18) "

38 is a diagram showing that the sensing time and the noise level are in a trade-off relationship with each other.

As described above, the present invention proposes a method of simultaneously sensing two or more subpixels at a plurality of times in order to reduce the sensing time required to sense the characteristic values (mobility, threshold voltage) of the driving transistor.

Hereinafter, a method of setting the sensing time inversely proportional to the size of the driving transistor of the sub-pixels sensed at the same time is further proposed in order to further increase the accuracy of sensing and compensation while reducing the sensing time. Here, assuming that the channel lengths of the driving transistors are the same, the size of the driving transistor may be the channel width of the driving transistor.

The method of setting the sensing time in inverse proportion to the driving transistor size can be applied not only to the threshold voltage sensing but also to the mobility sensing. Hereinafter, the sensing time setting method will be described focusing on threshold voltage sensing.

Assuming that the channel widths of the R, W, G, and B drive transistors are 22 μm, 14 μm, 22 μm, and 17 μm, respectively, and assuming that 30 ms is required to sense the threshold voltage in color units, k is 542.6 ms * k / 22 + k / 14 + k / 22 + k / 17 = 30x4, k = 542.6). Here, k indicates the sensing time [ms] per reciprocal [1 / um] of the channel width of the driving transistor, and its unit is ms * um.

When this k is applied to the simultaneous sensing structure by three subpixels shown in Figs. 34A to 34D, it is 9.4 ms for R / W / G simultaneous sensing as shown in Table 1 below according to 542.6 ms * um / (22 um + 14 um + 22 um) Can be assigned to the sensing time. For the simultaneous sensing of W / G / B, a sensing time of 10.2 ms may be allocated according to 542.6 ms * um / (14 um + 22 um + 17 um). For the simultaneous G / B / R sensing, a sensing time of 8.9 ms can be allocated according to 542.6 ms * um / (22 um + 17 um + 22 um). For the simultaneous sensing of B / R / W, a sensing time of 10.2 ms can be allocated according to 542.6 ms * um / (17 um + 22 um + 14 um). Therefore, the total sensing time of 4 sensing times is 38.7 ms, which is 32.3% of the total sensing time (120 ms) for individual sensing.

When the above k is applied to two or three sub-pixels of the simultaneous sensing structure shown in FIGS. 35A to 35D, the R / W simultaneous sensing is performed according to 542.6ms * um / (22um + 14um) A sensing time of 15.1 ms may be allocated. For W / G simultaneous sensing, a sensing time of 15.1 ms can be allocated according to 542.6 ms * um / (14 um + 22 um). For W / B simultaneous sensing, a sensing time of 17.5 ms may be allocated according to 542.6 ms * um / (14 um + 17 um). For the R / G / B simultaneous sensing, a sensing time of 8.9 ms can be allocated according to 542.6 ms * um / (22 um + 22 um + 17 um). Therefore, the total sensing time of 4 sensing times is 56.5 ms, which is reduced to 47.1% of sensing time (120 ms) for individual sensing.

When k is applied to one or two sub-pixels of the simultaneous sensing structure shown in FIG. 36A to FIG. 36D, the sensing time of 38.8 ms is 542.6 ms * um / 14um for W simultaneous sensing as shown in Table 1 below Can be assigned. The sensing time of 12.3 ms can be allocated to R / G simultaneous sensing according to 542.6 ms * um / (22 um + 22 um). For the G / B simultaneous sensing, a sensing time of 13.9 ms can be allocated according to 542.6 ms * um / (22 um + 17 um). For the R / B simultaneous sensing, a sensing time of 13.9 ms can be allocated according to 542.6 ms * um / (22 um + 17 um). Therefore, the total sensing time after four sensing is 78.9ms, which is reduced to 65.8% of the sensing time (120ms) for individual sensing.

Sensing time [ms] Time ratio One by one
Individual Sensing R 25.0 120.0 100% W 39.0 G 24.0 B 32.0 Three
Simultaneous sensing R / W / G 9.4 38.7 32.3% W / G / B 10.2 R / G / B 8.9 R / W / B 10.2 Simultaneous sensing of two or three R / W 15.1 56.5 47.1% W / G 15.1 W / B 17.5 R / G / B 8.9 Sensing one or two simultaneously W 38.8 78.9 65.8% R / G 12.3 G / B 13.9 R / B 13.9

When a plurality of subpixels are simultaneously sensed, the sensing time is set in inverse proportion to the size of the driving transistor, and the level of saturation is optimized for the subpixel combination, so that the accuracy of sensing can be improved and the accuracy of compensation can be increased accordingly . 38 shows a trade-off relationship between the sensing time and the noise level. Each point represents a combination that senses RWGB. As the number of subpixels sensed at the same time increases, the noise level increases and the accuracy of sensing deteriorates. If the sensing time is set in inverse proportion to the size of the driving transistor as in the present invention and the level of saturation is appropriately adjusted, Can be greatly reduced. A method of sensing R / G / B, G / B / W, B / W / R and W / R / G shown in FIGS. 34A to 34D, G, W / B, and R / G / B are relatively low in noise level.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. , Separation, substitution, and alteration of the invention will be apparent to those skilled in the art. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: organic light emitting display device 110: organic light emitting display panel
120: Data driver 130: Gate driver
140: Timing controller

Claims (22)

A display panel in which a plurality of sub-pixels are arranged, each sub-pixel including an organic light emitting diode and a driving transistor for driving the organic light emitting diode;
A sensing time determiner for determining a sensing time for the subpixels;
And a sensing unit for sensing a characteristic value of the driving transistor through the determined sensing time,
Wherein the sensing time is independently determined for each color according to size information of the driving transistor. The method according to claim 1,
Further comprising a TFT data base for providing size information of driving transistors for each color set in advance in the sensing time determination unit. The method according to claim 1,
Wherein the sensing time determining unit determines the sensing time in inverse proportion to the size of the driving transistor. A method of driving an organic light emitting display including a plurality of subpixels, each subpixel including an organic light emitting diode and a driving transistor for driving the organic light emitting diode,
Determining a sensing time for the subpixels;
Sensing the characteristic value of the driving transistor through the determined sensing time,
Wherein the sensing time is independently determined for each color according to size information of the driving transistor. An organic light emitting display panel in which a plurality of subpixels each including an organic light emitting diode and a driving transistor for driving the organic light emitting diode are arranged and each sensing line is arranged corresponding to each of K (K? 2) data lines;
A data driver for simultaneously outputting a sensing data voltage with S (2? S? K) data lines among the K data lines while sensing a characteristic value of the driving transistor;
An analog digital converter for sensing the voltage of the sensing line K times and outputting K sensing voltages; And
Pixel, an inverse matrix of a K x K matrix determined by a current amount ratio of driving transistors of S subpixels connected to the S data lines or a driving transistor size ratio of the S subpixels, And a compensator for calculating a characteristic value of the driving transistor for each of the K subpixels connected to the K data lines. 6. The method of claim 5,
Wherein the S subpixels are selected as subpixels which are simultaneously sensed among the K subpixels. 6. The method of claim 5,
Wherein the data driver outputs a black data voltage defined as a non-sensing data voltage to KS data lines excluding the S data lines among the K data lines. 6. The method of claim 5,
Wherein when the characteristic value of the driving transistor is the mobility of the driving transistor and the S is small to K,
Wherein each matrix coefficient of each column in the KxK matrix represents a current flowing through the driving transistor of the subpixel among the S subpixels as a sum of the total current flowing through the sensing line The current is divided by the current amount. 9. The method of claim 8,
Wherein the data driver outputs a data voltage for sensing the mobility of the driving transistor to each sub-pixel so that currents flowing through the driving transistors of the S sub-pixels are equal to each other. 6. The method of claim 5,
When the characteristic value of the driving transistor is the mobility of the driving transistor and the S is not so small as K,
Wherein each matrix coefficient of each column in the KxK matrix represents a current flowing through the driving transistor of the corresponding subpixel among the K subpixels as a sum of the total current flowing through the sensing line The current is divided by the current amount. 11. The method of claim 10,
The data driver is configured such that the current flowing through the driving transistor of one sub-pixel is equal to the sum of the currents flowing through the driving transistors of the other K-1 sub-pixels, and the driving transistors of the other K- And simultaneously outputs the sensing data voltage set so that the flowing currents are equal to each other to the S data lines. 6. The method of claim 5,
A characteristic value of the driving transistor is a threshold voltage of the driving transistor,
Wherein the compensator comprises: a K × K matrix expressed by reflecting a size ratio of the driving transistors included in the S subpixels; and a threshold voltage calculation unit calculating a threshold voltage of the driving transistors in each of the K subpixels based on the K sensing voltages To the organic light emitting display device. 6. The method of claim 5,
A characteristic value of the driving transistor is a threshold voltage of the driving transistor,
Wherein the compensator compensates for the ratio of the channel width of the transistor included in the S subpixels and the degree of the sensing data voltage output to each of the S data lines to the sensed voltage, And a threshold voltage of the driving transistor in each of the K subpixels based on the K sensing voltages. 14. The method of claim 13,
Wherein the data driver simultaneously outputs a sensing data voltage to the S data lines, wherein a first sensing data voltage output to one of the S data lines is an organic light emission Display device. The method according to claim 6,
Wherein the number of sub-pixels to be simultaneously sensed is set differently at least once during the K number of sensing operations. 6. The method of claim 5,
Wherein the sensing time required for the K sensing is set to be inversely proportional to the size of the driving transistor of the subpixels sensed at the same time. A plurality of subpixels each including an organic light emitting diode and a driving transistor for driving the organic light emitting diode are disposed, and each of the sensing lines has an organic light emitting display panel corresponding to each of K (K? 2) A driving method of an organic light emitting display device,
Simultaneously outputting a sensing data voltage with S (2? S? K) data lines among the K data lines while sensing the driving transistor characteristic value;
Sensing the voltage of the sensing line K times and outputting K sensing voltages; And
Pixel, an inverse matrix of a K x K matrix determined by a current amount ratio of driving transistors of S subpixels connected to the S data lines or a driving transistor size ratio of the S subpixels, And calculating a characteristic value of a driving transistor for each of the K subpixels connected to the K data lines. 18. The method of claim 17,
Wherein the sensing time required for the K sensing is set to be inversely proportional to the driving transistor size of the subpixels being simultaneously sensed. An organic light emitting display panel in which a plurality of subpixels each including an organic light emitting diode and a driving transistor for driving the organic light emitting diode are arranged and each of the sensing lines is arranged corresponding to each of K (K? 1) data lines;
A gate driver for driving a gate line of the organic light emitting display panel and simultaneously outputting a scan signal to M (2? M? L) gate lines among L gate lines while measuring a characteristic value of the drive transistor;
A data driver for outputting a sensing data voltage to any one of the K data lines while sensing a characteristic value of the driving transistor;
An analog digital converter sensing the voltage of the sensing line L times and outputting L sensing voltages; And
An inverse matrix of an L x L matrix determined by a current amount ratio of driving transistors of M subpixels connected to the M gate lines and an inverse matrix of the L subpixels connected to the L gate lines based on the L sensing voltages And a compensator for calculating the characteristic value of the driving transistor for the organic light emitting display. 20. The method of claim 19,
Wherein the M subpixels are selected as subpixels which are simultaneously sensed among the L subpixels. 21. The method of claim 20,
Wherein a characteristic value of the driving transistor is a mobility of the driving transistor,
Wherein each matrix coefficient of each column in the LxL matrix is a sum of the currents flowing through the driving transistors of the subpixels among the M subpixels, The current is divided by the current amount. A plurality of subpixels each including an organic light emitting diode and a driving transistor for driving the organic light emitting diode are disposed, and each sensing line is associated with each of K (K? 1) data lines, A driving method of an organic light emitting display device,
Outputting a scan signal simultaneously to M (2? M? L) gate lines among L gate lines of the OLED display panel while measuring a characteristic value of the driving transistor;
Outputting a data voltage for sensing with any one of the K data lines while sensing a characteristic value of the driving transistor;
Sensing the voltage of the sensing line L times and outputting L sensing voltages; And
An inverse matrix of an L x L matrix determined by a current amount ratio of driving transistors of M subpixels connected to the M gate lines and an inverse matrix of the L subpixels connected to the L gate lines based on the L sensing voltages And calculating a characteristic value of the driving transistor for the organic light emitting display device.

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