KR20170006350A - Organic light emitting display device - Google Patents

Abstract

Embodiments of the present invention relate to an organic light emitting display device capable of performing a feature value sensing operation between driving transistors for a blank time section, in real time, and a driving method thereof. The organic light emitting display device includes an organic light emitting display panel on which a plurality of data lines, a plurality of gate lines, and a plurality of sub pixels are arranged, a data driver which drives the plurality of data lines, a gate driver which drives the plurality of gate lines, and a controller which controls the data driver and the gate driver.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light-

The present embodiments relate to an organic light emitting display for displaying an image.

2. Description of the Related Art In recent years, an organic light emitting diode (OLED) display device that has been spotlighted as a display device has a high response speed and an excellent contrast ratio, luminous efficiency, luminance, and viewing angle by using an organic light emitting diode (OLED) There are advantages.

Each sub-pixel of the organic light emitting diode display may include an organic light emitting diode and a driving transistor for driving the organic light emitting diode. Each sub-pixel of the organic light emitting diode display may include an organic light emitting diode and a driving transistor for driving the organic light emitting diode.

On the other hand, the driving transistors in each sub-pixel have inherent characteristic values such as threshold voltage and mobility. In addition, each driving transistor may undergo degradation according to the driving time, and a characteristic value such as a threshold voltage and a mobility may be changed.

Due to these points, the difference in the degree of deterioration between the driving transistors occurs due to the difference in driving time between the driving transistors in each sub-pixel, and a characteristic value deviation between the driving transistors may also occur.

Such a characteristic value deviation between the driving transistors may cause a luminance deviation between the subpixels, which may be a main factor causing image quality degradation.

Accordingly, various techniques have been developed to compensate for variations in characteristic values between driving transistors.

On the other hand, in order to compensate for the characteristic value deviation between the driving transistors, the sensing driving for sensing the characteristic value or the characteristic value change amount is performed. Since this sensing driving takes a long time, It takes a lot of time.

Therefore, there has been a problem that the characteristic value sensing operation between the driving transistors can not proceed in real time while the power is on, that is, while the image is being driven.

It is an object of the present embodiments to provide an organic light emitting display device capable of realizing a sensing operation of characteristic values between driving transistors during a blank time period in real time.

It is an object of the embodiments of the present invention to provide an organic light emitting display device that does not perform a characteristic value sensing operation between drive transistors after a power OFF signal is generated or minimizes a time for performing the characteristic value sensing operation.

One embodiment includes an organic light emitting display panel in which a plurality of data lines and a plurality of gate lines are arranged and in which a plurality of subpixels are arranged, a data driver driving a plurality of data lines, a gate driving a plurality of gate lines A driver, a controller for controlling the data driver and the gate driver, and the like.

In order to sense the threshold voltages of the driving transistors in the subpixels of the OLED display panel, n (n > = 2) threshold voltage real time sensing driving periods exist, and all of the n number of threshold voltage real time sensing driving periods Some can be included in the blank time interval.

In another embodiment, an organic light emitting display panel including a plurality of sub-pixels including an organic light emitting diode and a driving transistor, and n (n > = 2) threshold voltage real time sensing driving periods in which all or a part of the organic light emitting display panels are included in a blank time interval And a sensing unit for sensing a threshold voltage of a driving transistor in subpixels of the organic light emitting display panel during a predetermined period of time.

According to the exemplary embodiments of the present invention described above, it is possible to provide an organic light emitting display device capable of realizing a sensing operation of characteristic values between driving transistors during a blank time period in real time.

In addition, according to the embodiments, it is possible to provide an organic light emitting display capable of minimizing the time for performing or performing the characteristic value sensing operation between the driving transistors after the power-off signal is generated.

1 is a schematic system configuration diagram of an organic light emitting display according to the present embodiments.
FIG. 2 is a view illustrating a sub-pixel structure of an OLED display according to an embodiment of the present invention. Referring to FIG.
3 is an exemplary diagram of a subpixel compensation circuit of an organic light emitting display according to the present embodiments.
4 is a graph illustrating a voltage change of a first node of a sensing node or a driving transistor in a threshold voltage sensing operation of the OLED display according to the present embodiments.
FIGS. 5 and 6 are views showing initial threshold voltage sensing and threshold voltage variation sensing of the organic light emitting diode display according to the present embodiments.
FIG. 7 is a diagram illustrating a voltage change of a first node of a sensing node or a driving transistor when sensing a threshold voltage through one sensing driving in the organic light emitting display according to the present embodiments.
8 is an exemplary diagram of threshold voltage sensing timing in the organic light emitting display according to the present embodiments.
9 is a view for explaining a method of real-time sensing of a threshold voltage through n-times of threshold voltage real time sensing driving in the organic light emitting display according to the present embodiments.
10 is a diagram schematically showing the timing of threshold voltage real time sensing driving during a blank time interval in the organic light emitting diode display according to the present embodiments.
11 is a diagram schematically showing the timing of threshold voltage real time sensing driving during a blank time interval in the organic light emitting diode display according to the present embodiments.
12 is an exemplary diagram illustrating a timing at which the organic light emitting display according to the present embodiments performs n-times threshold voltage real time sensing driving for threshold voltage sensing of driving transistors in subpixels of an OLED display panel.
FIG. 13 is a conceptual diagram of real-time sensing of a threshold voltage in the threshold voltage real time sensing driving in the organic light emitting display according to the present embodiments.
FIG. 14 is a graph showing changes in the voltage of the sensing node when the threshold voltage is sensed in real time in the threshold voltage real time sensing drive of FIG.
15 is a conceptual diagram of threshold voltage real time sensing driving in the organic light emitting display according to the present embodiments.
FIG. 16 is a graph showing changes in the voltage of the sensing node Ns when the threshold voltage real time sensing operation is performed n times during the threshold voltage real time sensing driving of FIG.
17 is a conceptual view illustrating sensing and compensation using the threshold voltage real time sensing driving of the OLED display according to the present embodiments.
FIGS. 19 to 23 illustrate the threshold voltage real-time sensing during the blank time interval with respect to the threshold voltage of the entire region of the OLED display panel.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. In the drawings, like reference numerals are used to denote like elements throughout the drawings, even if they are shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

In describing the components of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the components from other components, and the terms do not limit the nature, order, order, or number of the components. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; intervening "or that each component may be" connected, "" coupled, "or " connected" through other components.

FIG. 1 is a schematic system configuration diagram of an organic light emitting diode display 100 according to the present embodiments.

1, the OLED display 100 includes a plurality of data lines DL and a plurality of gate lines GL, and a plurality of sub-pixels SP are arranged in a matrix type An organic light emitting diode (OLED) display panel 110 disposed in the OLED display panel 110, a plurality of data lines by supplying data voltages to a plurality of data lines, a driving data driver 120, and a plurality of gate lines, A gate driver 130 for sequentially driving gate lines, a controller 140 for controlling the data driver 120 and the gate driver 130, and the like.

The controller 140 supplies various control signals DCS and GCS to the data driver 120 and the gate driver 130 to control the data driver 120 and the gate driver 130.

The controller 140 starts scanning in accordance with the timing implemented in each frame, switches the input image data input from the outside according to the data signal format used by the data driver 120, and outputs the converted image data (DATA) And controls the data driving at a proper time according to the scan.

The controller 140 may be implemented with at least one timing controller.

The gate driver 130 sequentially drives the plurality of gate lines by sequentially supplying a scan signal of an On voltage or an Off voltage to the plurality of gate lines under the control of the controller 140.

1, the gate driver 130 may be located on only one side of the organic light emitting display panel 110, or may be located on both sides of the organic light emitting display panel 110, as the case may be.

In addition, the gate driver 130 may include one or more gate driver integrated circuits.

Each gate driver integrated circuit may be connected to a bonding pad of the organic light emitting display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) Panel type and may be directly disposed on the organic light emitting display panel 110 or may be integrated on the organic light emitting display panel 110 as the case may be.

Each gate driver integrated circuit may include a shift register, a level shifter, and the like.

When the specific gate line is opened, the data driver 120 converts the image data (DATA) received from the controller 140 into analog data voltages and supplies the data voltages to the data lines to drive the plurality of data lines.

The data driver 120 may include at least one source driver integrated circuit to drive a plurality of data lines.

Each source driver integrated circuit may be connected to a bonding pad of the organic light emitting display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) And may be directly disposed on the organic light emitting display panel 110, and may be integrated and disposed on the organic light emitting display panel 110, as the case may be.

Each source driver integrated circuit can be implemented by a chip on film (COF) method.

In this case, one end of each source driver integrated circuit is bonded to at least one source printed circuit board, and the other end is bonded to the organic light emitting display panel 110.

Each source driver integrated circuit may include a logic portion including a shift register, a latch circuit, etc., a digital analog converter (DAC), an output buffer, and the like, For example, a threshold voltage and a mobility of a driving transistor, a threshold voltage of an organic light emitting diode, a luminance of a subpixel, and the like).

On the other hand, the controller 140 outputs various kinds of signals including the vertical synchronization signal Vsync, the horizontal synchronization signal Hsync, the input data enable signal (DE), and the clock signal (CLK) Timing signals from the outside (e.g., the host system).

The controller 140 outputs the converted image data by switching the input image data inputted from the outside in accordance with the data signal format used by the data driver 120 and outputs the converted image data to the data driver 120 and the gate driver 130, A timing signal such as a vertical synchronization signal Vsync, a horizontal synchronization signal Hsync, an input DE signal and a clock signal and generates various control signals to control the data driver 120 and the gate driver 130, .

For example, in order to control the gate driver 130, the controller 140 generates a gate start pulse (GSP), a gate shift clock (GSC), a gate output enable signal GOE Gate Output Enable), and the like.

Here, the gate start pulse GSP controls the operation start timing of one or more gate driver integrated circuits constituting the gate driver 130. The gate shift clock GSC is a clock signal commonly input to one or more gate driver integrated circuits, and controls the shift timing of the scan signal (gate pulse). The gate output enable signal GOE specifies the timing information of one or more gate driver ICs.

In order to control the data driver 120, the controller 140 may further include a source start pulse (SSP), a source sampling clock (SSC), a source output enable signal (SOE) And outputs various data control signals (DCS: Data Control Signals).

Here, the source start pulse SSP controls the data sampling start timing of one or more source driver integrated circuits constituting the data driver 120. The source sampling clock SSC is a clock signal for controlling sampling timing of data in each of the source driver integrated circuits. The source output enable signal SOE controls the output timing of the data driver 120.

1, the controller 140 includes a source printed circuit board to which a source driver integrated circuit is bonded and a connection medium such as a flexible flat cable (FFC) or a flexible printed circuit (FPC) Lt; RTI ID = 0.0 > (Printed Circuit Board). ≪ / RTI >

A power controller (not shown) for controlling various voltages or currents to supply or supply various voltages or currents to the organic light emitting display panel 110, the data driver 120, the gate driver 130, . These power controllers are also referred to as power management ICs (PMICs).

The source printed circuit board and the control printed circuit board mentioned above may be a single printed circuit board.

Each of the plurality of subpixels arranged in the organic light emitting display panel 110 according to the present embodiment includes an organic light emitting diode (OLED), a driving transistor (DRT) for driving the organic light emitting diode, A capacitor, and the like can be basically included.

The types and the number of the circuit elements constituting each subpixel can be variously determined depending on a providing function, a design method, and the like.

Hereinafter, a subpixel structure for sensing and compensating characteristic values such as threshold voltage and mobility of the driving transistor DRT will be described as an example.

2 is an exemplary view of a sub-pixel structure of the OLED display 100 according to the present embodiments.

Referring to FIG. 2, each subpixel SP disposed in the organic light emitting display panel 110 according to the present embodiment includes an organic light emitting diode OLED, a driving transistor (not shown) for driving the organic light emitting diode OLED And a driving transistor DRT connected between the second node N2 of the driving transistor DRT and the data line DL and transferring the data voltage Vdata to the second node N2 of the driving transistor DRT A storage capacitor Cst serving as a constant voltage for one frame time; a first node N1 and a reference voltage Vref of the driving transistor DRT; And a sensing transistor (SENT) electrically connected between a reference voltage line (RVL) for supplying the reference voltage line (RVL).

Referring to FIG. 2, the organic light emitting diode OLED includes a first electrode (e.g., an anode electrode or a cathode electrode), an organic layer, and a second electrode (e.g., a cathode electrode or an anode electrode).

For example, the first electrode of the organic light emitting diode OLED is connected to the first node N1 of the driving transistor DRT, and the second electrode of the organic light emitting diode OLED is connected to the ground voltage Lt; / RTI >

Referring to FIG. 2, the driving transistor DRT is a transistor for driving the organic light emitting diode OLED by supplying a driving current to the organic light emitting diode OLED. The driving transistor DRT includes a first node N1), a second node N2 corresponding to a gate node, and a third node N3 corresponding to a drain node or a source node.

For example, the first node N1 of the driving transistor DRT may be electrically connected to the first electrode or the second electrode of the organic light emitting diode OLED. Also, the first node N1 of the driving transistor DRT may be electrically connected to the source node or the drain node of the sensing transistor SENT. The source node or the drain node of the switching transistor SWT may be electrically connected to the second node N2 of the driving transistor DRT and the third node N3 may be coupled to the driving voltage line DVL < / RTI >

2, the switching transistor SWT is a transistor for transferring the data voltage Vdata to the N2 node corresponding to the gate node of the driving transistor DRT. The N2 node of the driving transistor DRT and the data line DL and is turned on by the scan signal SCAN applied to the gate node to transfer the data voltage Vdata to the node N2 of the driving transistor DRT.

Referring to FIG. 2, the storage capacitor Cst may be electrically connected between the first node N1 and the second node N2 of the driving transistor DRT.

2, the sensing transistor SENT is electrically connected between the first node of the driving transistor DRT and the reference voltage line RVL, and is connected to the sense node SENSE ). ≪ / RTI > Here, an arbitrary point on the reference voltage line RVL corresponds to the sensing node Ns.

The sensing transistor SENT may be turned on to apply the reference voltage Vref supplied through the reference voltage line RVL to the first node N1 of the driving transistor DRT.

Referring to FIG. 2, the gate node of the switching transistor SWT and the gate node of the sensing transistor SENT may be electrically connected to the same gate line to receive the same gate signal. In this case, the scan signal SCAN and the sense signal SENSE are the same gate signal.

Alternatively, the gate node of the switching transistor SWT and the gate node of the sensing transistor SENT may be electrically connected to different gate lines. In this case, the scan signal SCAN and the sense signal SENSE are different gate line signals.

On the other hand, each driving transistor DRT has a characteristic value such as a threshold voltage (Vth) and a mobility. In addition, the driving transistor DRT may be degraded according to the driving time, and the characteristic value may be changed.

For this reason, there may be a difference in degree of deterioration between the driving transistors DRT in each sub-pixel, and there may be a characteristic value deviation between the driving transistors DRT in each pixel.

The characteristic value deviation between the driving transistors DRT in each sub-pixel may cause a luminance deviation between each sub-pixel, which may be a main factor causing image quality degradation.

There may be not only a characteristic value deviation (threshold voltage deviation, mobility deviation) between the driving transistors DRT but also a characteristic value deviation (threshold voltage deviation, etc.) between the organic light emitting diodes OLED.

In this specification, the characteristic value deviation between the driving transistors DRT and the characteristic value deviation between the organic light emitting diodes (OLED) are collectively referred to as "sub pixel characteristic value deviation ".

Therefore, in order to improve image quality, it is necessary to compensate for the deviation of sub-pixel characteristic values.

3, the OLED display 100 according to the present embodiment includes a sensing configuration and a compensation configuration for sensing a sub-pixel characteristic value deviation, and the sensing configuration and the compensation configuration A sensing driving method and a compensation method can be provided.

As shown in FIG. 3, the organic light emitting diode display 100 according to the present embodiment is a sensing structure for sensing a sub pixel characteristic value variation (also referred to as a sub pixel characteristic value variation amount), and includes a reference voltage line RVL A sensing unit 300 connected through the second switch SW2 to sense a voltage on a reference voltage line RVL that has become a specific voltage state through sensing driving and convert the sensed voltage into a digital value to output sensing data, . ≪ / RTI >

The sensing unit 300 may be implemented as an analog to digital converter (ADC).

Referring to FIG. 3, the sensing data output by the sensing unit 300 may be stored in the memory 310.

3, the OLED display 100 according to the present embodiment includes a compensation unit for compensating a deviation of a subpixel characteristic value, and uses the sensing data output from the sensing unit 300 And a compensation unit 320 for calculating a compensation value for compensating the deviation of the sub-pixel characteristic value.

The compensation value calculated by the compensation unit 320 may be stored in the memory 310. [

The compensation unit 320 or the controller 140 changes the data to be supplied to the corresponding subpixel using the compensation value calculated by the compensation unit 320 and supplies the changed data to the data driver 120. [ Thus, the subpixel characteristic value deviation compensation is actually performed.

For example, the changed data may be generated by adding a compensation value (e.g., a threshold voltage or a threshold voltage variation (threshold voltage variation), etc.) to the original data.

The compensation unit 320 may be included in the controller 140.

Hereinafter, the principle of sensing the threshold voltage (or the threshold voltage variation) of the driving transistor DRT will be briefly described with reference to FIG.

4 is a graph illustrating a voltage change of the first node N1 of the sensing node Ns or the driving transistor DRT during the threshold voltage sensing operation of the OLED display 100 according to the present embodiments.

Referring to FIG. 4, the threshold voltage sensing operation of the OLED display 100 according to the exemplary embodiments of the present invention may proceed to an initialization step S410, a voltage follow-up step S420, and a sensing step S430. here,

Referring to FIG. 4, in the initialization step S410, the first node N1 and the second node N2 of the driving transistor DRT are initialized to the data voltage Vdata and the reference voltage Vref, respectively.

In the initialization step S410, the switching transistor SWT is turned on and the data voltage Vdata is applied to the second node N2 of the driving transistor DRT. The first switch SW1 for connecting the reference voltage line RVL and the reference voltage supply node Nref is turned on so as to be driven through the reference voltage line RVL and the sensing transistor SENT turned- The reference voltage Vref is applied to the first node N1 of the transistor DRT.

Referring to FIG. 4, in the voltage-following step S420, the first node N1 of the driving transistor DRT is floated. Accordingly, the voltage of the first node N1 of the driving transistor DRT rises while following the voltage of the second node N2.

The voltage of the first node N1 of the driving transistor DRT rises and becomes saturated after a certain time.

The sensing step S430 is performed when the voltage of the first node N1 of the driving transistor DRT becomes saturated.

In the sensing step S430, the second switch SW2 is turned on, and the sensing unit 300 senses the voltage of the reference voltage line RVL.

The sensing voltage Vsen sensed at this time can be represented by a known data voltage Vdata and a threshold voltage Vth to be known (Vsen = Vdata-Vth).

FIGS. 5 and 6 are views showing an initial threshold voltage sensing and a threshold voltage variation sensing of the organic light emitting diode display 100 according to the present embodiments.

Referring to FIG. 5, when the threshold voltage of the driving transistor DRT is first sensed, that is, in the case of the initial threshold voltage sensing, according to the threshold voltage sensing operation of FIG. 4, Vsen) is Vdata-Vth.

As shown in FIG. 5, when the driving transistor DRT is further deteriorated after the threshold voltage Vth of the driving transistor DRT is first sensed, the threshold voltage Vth can be changed at the initial threshold voltage Vth.

As described above, when the threshold voltage of the driving transistor DRT changes from Vth to Vth 'in accordance with the threshold voltage change of the driving transistor DRT, that is, when the threshold voltage variation amount DELTA Vth = Vth Is applied to the second node N2 of the driving transistor DRT in the initializing step S410 in order to sense the threshold voltage variation amount DELTA Vth of the driving transistor DRT The data voltage Vdata 'is a voltage obtained by adding a threshold voltage previously sensed to Vdata (i.e., an initial threshold voltage Vth) (Vdata' = Vdata + Vth).

According to the threshold voltage sensing operation of FIG. 4, the voltage Vsen sensed by the sensing unit 300 at the time of threshold voltage variation sensing, that is, at the time of threshold voltage sensing, not initial threshold voltage sensing, Can be expressed as.

In Equation 1, Vth is Vth_memory stored in the memory 310 according to the initial sensing, and Vth 'is Vth_real, which is an actual threshold voltage of the driving transistor DRT at the time of current sensing.

Therefore, equation (1) can be expressed again by the following equation (2).

7 is a timing chart showing the operation of the sensing node Ns or the first node N1 of the driving transistor DRT when the threshold voltage is sensed through one sensing operation in the OLED display 100 according to the present embodiment. Fig.

During the threshold voltage sensing operation, the voltage follow-up step (S420) takes considerably longer than the initialization step (S410).

7, the voltage state of the sensing node Ns or the first node N1 of the driving transistor DRT in the threshold voltage sensing operation is the voltage state in the initializing step S410 It will be ignored.

In FIG. 7, it is assumed that the initialization voltage Vref applied to the first node N1 of the driving transistor DRT is 0 [V].

Referring to FIG. 7, the voltage Vsen sensed by the sensing unit 300 at the time of threshold voltage variation sensing, that is, at the time of threshold voltage sensing, not initial threshold voltage sensing, may be expressed as Equation (2) .

Referring to FIG. 7, the threshold voltage change amount? Vth may be a positive value or a negative value.

On the other hand, during the threshold voltage sensing operation, the voltage of the first node N1 of the driving transistor DRT rises and takes a considerable time to saturate. As a result, the total sensing driving time Ts required for the threshold voltage sensing is extremely long.

This is because, if the number of subpixels becomes higher according to the high resolution, it takes a spicy long time (about several minutes to several tens of minutes) to sense the threshold voltage for the subpixels arranged in the organic light emitting display panel 110 none. That is, the size of the driving transistor is reduced in accordance with a small pixel size for high resolution implementation. At this time, due to the lowering of the current capacity of the driving transistor, for example, an increase in threshold voltage sensing time due to an increase in sensing line capacitor charging time, etc., can not be avoided.

Therefore, as shown in FIG. 8, the threshold voltage sensing may be performed when the power-off signal of the organic light emitting display 100 is generated so as not to interfere with the user's viewing.

When the power-off signal is generated and the threshold voltage of the OLED display panel 110 is sensed, the threshold voltage compensation can not be performed in a timely manner.

Also, when a power off signal is generated, threshold voltage sensing is not performed when the power source code is forcibly disconnected when the threshold voltage sensing is performed on the organic light emitting display panel 110.

Accordingly, the present embodiments provide a real-time threshold voltage real time threshold voltage real time sensing driving method capable of sensing, in real time, a threshold voltage of a driving transistor in a subpixel during a power-on period, for example, a blank time interval And a sensing and compensation method using the same.

Here, during the blank time period, the threshold voltage real time sensing driving method divides the total sensing driving period required for sensing the threshold voltage of the driving transistor in the sub-pixels of the organic light emitting display panel 110 into a blank time The organic light emitting display panel 110 is driven in order to sense the threshold voltage in real time during several threshold voltage real time sensing driving periods.

In other words, there are n (n? 2) threshold voltage real time sensing driving periods for sensing the threshold voltage of the driving transistors in the subpixels of the organic light emitting display panel 110, and nth threshold voltage real time sensing driving periods All or a part of them may be included in the blank time period.

9 is a diagram for explaining a method of sensing a threshold voltage in real time by driving a threshold voltage real time threshold voltage real time sensing during a blank time period in the organic light emitting diode display 100 according to the present embodiments. 10 is a diagram schematically showing the timing of threshold voltage real time sensing driving during a blank time interval in the OLED display 100 according to the present embodiments.

Referring to FIGS. 9 and 10, in the organic light emitting diode display 100 according to the exemplary embodiments of the present invention, during the blank time period, while sensing the threshold voltage in real time over the entire area of the organic light emitting display panel 110, There are n number of threshold voltage real time sensing driving periods (PSD # 1, PSD # 2, ..., PSD #n, n≥2) having two or more values during the blank time period.

in each of the at least one sensing target subpixel during each threshold voltage real time sensing driving period in the n number of threshold voltage real time sensing driving periods PSD # 1, PSD # 2, ..., PSD #n, DRT) characteristic value sensing (e.g., threshold voltage sensing).

That is, in n threshold voltage real time sensing driving periods (PSD # 1, PSD # 2, ..., PSD #n), during each threshold voltage real time sensing driving period, A voltage is raised at the first node N1 of the driving transistor DRT driving the light emitting diode OLED and a positive voltage is applied to the second node N1 of the driving transistor DRT.

Referring to FIG. 9 and FIG. 10, when threshold voltage real time Ts time is required when threshold voltage sensing is performed on the organic light emitting display panel 110 when a power off signal is generated as shown in FIG. 8, When all the times T1, T2, ..., TN necessary for each of the n number of threshold voltage real time sensing driving operations are summed for the threshold voltage sensing of the driving transistors in the necessary (or all) subpixels of the display panel 110 , Which is equal to or similar to Ts time.

Using the threshold voltage real time sensing driving method during the blank time interval described above, threshold voltage sensing that was impossible while the power is on can be enabled. That is, the threshold voltage real time sensing driving period for the threshold voltage sensing of the driving transistor in the subpixels of the organic light emitting display panel 110 is divided into two or more threshold voltage real time sensing driving periods, The threshold voltage sensing requiring long sensing operation can be performed in real time even during the time interval.

11 is a diagram schematically showing the timing of threshold voltage real time sensing driving during a blank time interval in the OLED display 100 according to the present embodiments.

11, the threshold voltage sensing of the driving transistors in the subpixels of the organic light emitting display panel 110 is performed not only during the blank time period but also during the blank time period, When the threshold voltage sensing of the driving transistor is not completed, the threshold voltage sensing for a part of the organic light emitting display panel 110 may proceed even after the power off signal is generated.

Even if the threshold voltage sensing of the driving transistor in some sub-pixels of the organic light emitting display panel 110 proceeds after the power-off signal is generated, as shown in FIG. 8, It is possible to lower the sensing driving time after the power is turned off, rather than proceeding the threshold voltage sensing of the transistor after the power-off signal is generated. 11, the threshold voltage sensing of the driving transistors in some sub-pixels of the organic light emitting display panel 110 is referred to as a power-off signal. It can also mean real-time sensing of the threshold voltage after it has occurred.

According to this phenomenon, the first threshold voltage real time sensing driving period to the (N-1) th threshold voltage real sensing operation among the n threshold voltage real time sensing driving periods (PSD # 1, PSD # 2, ..., PSD # The voltage of the first node N1 of the driving transistor DRT is not saturated and the threshold voltage real time sensing driving periods PSD # 1, PSD # 2, ..., PSD # n), the voltage of the first node N1 of the driving transistor DRT becomes saturated in the last nth threshold voltage real time sensing driving period.

As described above, since the sensing drive (threshold voltage sensing drive) for causing the first node N1 of the driving transistor DRT to assume a voltage state reflecting the threshold voltage is divided into n threshold voltage real time sensing drives , The threshold voltage real time sensing driving period later, the voltage rising width gradually decreases, and the voltage of the first node N1 of the driving transistor DRT becomes saturated in the last threshold voltage real time sensing driving period.

Hereinafter, with reference to FIG. 12, the timing at which the threshold voltage real time sensing drive is performed n times for threshold voltage sensing of the driving transistor in the subpixels of the organic light emitting display panel 110 will be described.

12 is a timing chart showing the timing at which the organic light emitting diode display 100 according to the present embodiment performs the nth threshold voltage real time sensing drive for the threshold voltage sensing of the driving transistor in the subpixels of the OLED display panel 110 Fig.

12, each of the n threshold voltage real time sensing driving operations is divided into a blank time (Black Time) based on the vertical synchronization signal VSYNC, .

Accordingly, in each of the n threshold voltage real time sensing driving periods (PSD # 1, PSD # 2, ..., PSD #n) for one subpixel, each threshold voltage real time sensing driving period is divided into a blank time interval .

12 shows a case where four threshold voltage real time sensing driving periods PSD # 1, PSD # 2, PSD # 3, and PSD # 4 are included in four blank time periods within four frame times.

As described above, by driving the threshold voltage real time sensing drive for n times in each blank time interval, the nth threshold voltage real time sensing drive does not affect the image driving.

FIG. 13 is a conceptual view of real-time sensing of a threshold voltage in the threshold voltage real time sensing driving in the organic light emitting diode display 100 according to the present embodiments. FIG. 14 is a graph showing changes in the voltage of the sensing node when the threshold voltage is sensed in real time in the threshold voltage real time sensing drive of FIG.

First, during the threshold voltage sensing operation, the first node N1 of the driving transistor DRT is initialized to the initializing voltage Vref or Vini, and then floats to raise the voltage.

Accordingly, as shown in FIG. 13, at the start of the arbitrary i-1 th (i = 2, ..., n) th threshold voltage real time sensing driving period PSD # i- ), The first node N1 of the driving transistor DRT is initialized to the initialization voltage V1 (i-1), and then the voltage rises according to the floating.

V1B (i-1) corresponding to the voltage of the first node N1 of the driving transistor DRT corresponds to a saturation voltage at the end of the real-time sensing driving period PSD # i-1 .

Referring to FIG. 13, the voltage change of the first node N1 of the driving transistor DRT according to the threshold voltage real time sensing driving will be described with reference to FIG. 14, the positive threshold voltage change amount (Positive? Vth) and the negative threshold voltage change amount (Negative? Vth) in the case of having the positive threshold voltage change amount (Positive? Vth) and the negative threshold voltage change amount (Negative? And the threshold voltage change amount DELTA Vth between the threshold voltage change amount DELTA Vth.

Referring to FIG. 14, when threshold voltage real time sensing driving is performed for threshold voltage sensing for one subpixel, when the (i-1) th threshold voltage real time sensing driving period PSD # i-1 starts, The initializing step is performed so that the initializing voltage Vini corresponding to V1 (i-1) is applied to the first node N1 of the driving transistor DRT and the initializing voltage Vini corresponding to V1 A constant voltage (Vdata + Vini) corresponding to V2 (i-1) is applied.

Thereafter, the first node N1 of the driving transistor DRT is floated, and the voltage rise of the first node N1 of the driving transistor DRT occurs. the (i-1) th threshold voltage real time sensing driving period PSD # i-1 ends after the time T1 has elapsed by the length T1 of the (i-1) th threshold voltage real time sensing driving period PSD # i- , The voltage of the first node N1 of the driving transistor DRT becomes V1B (i-1).

V1B (i-1) corresponding to the voltage of the first node N1 of the driving transistor DRT at the end of the (i-1) th threshold voltage real time sensing driving period PSD # i- Saturation Voltage).

Accordingly, at the end of the (i-1) th threshold voltage real time sensing driving period PSD # i-1, the sensing unit 300 outputs V1B (i) corresponding to the saturation voltage of the first node N1 of the driving transistor DRT i-1 through the reference voltage line RVL or the sensing node Ns. At this time, the sensed voltage Vsen may be expressed by a voltage form including a threshold voltage Vth or a threshold voltage variation (DELTA Vth, threshold voltage deviation).

The compensation unit 320 may compensate the threshold voltage or the threshold voltage variation (threshold voltage variation) of the driving transistor DRT based on the sensed voltage Vsen.

13 and 14, after the first node N1 of the driving transistor DRT is initialized to the initializing voltage Vref or Vini in the (i-1) th threshold voltage real time sensing driving period PSD # i-1, V1B (i-1) corresponding to the voltage of the first node N1 of the driving transistor DRT at the time when the real sensing drive period PSD # i-1 ends, (Saturation voltage). The threshold voltage sensing for one subpixel is completed in the (i-1) th threshold voltage real time sensing driving period (PSD # i-1) since one blank time period is short or another compensation operation must be performed in the blank time period I can not.

Therefore, the sensing driving period for one subpixel is divided into two or more blank time periods, so that the threshold voltage sensing requiring a long sensing operation can be performed in real time while the power is on. Hereinafter, a process of dividing the sensing driving period for one subpixel into two or more blank time periods will be described with reference to FIGS. 15 and 16. FIG.

15 is a conceptual diagram of threshold voltage real time sensing driving in the OLED display 100 according to the present embodiments. FIG. 16 is a graph showing changes in the voltage of the sensing node Ns when the threshold voltage real time sensing operation is performed n times during the threshold voltage real time sensing driving of FIG. Here, the voltage change of the sensing node Ns may be a voltage change of the reference voltage line RVL and may be a voltage change of the first node N1 of the driving transistor DRT.

First, during the threshold voltage sensing operation, the first node N1 of the driving transistor DRT is initialized to the initializing voltage Vref or Vini, and then floats to raise the voltage.

Accordingly, as shown in FIG. 15, at the start of the arbitrary i-1th (i = 2, ..., n) th threshold voltage real time sensing driving period PSD # i- ), The first node N1 of the driving transistor DRT is initialized to the initialization voltage V1 (i-1), and then the voltage rises according to the floating.

The first node N1 of the driving transistor DRT is turned on when a voltage rise occurs and the threshold voltage real time sensing driving period PSD # i-1 of i-1 (i = 2, ..., n) (V1 (i-1) < V1B (i-1)) at the time point (intermediate point in the time interval corresponding to the voltage following step S420).

During each threshold voltage real time sensing driving period, the data voltages applied to the second node N2 (e.g., gate node) of the driving transistor DRT are equal to each other as a constant voltage.

Referring to FIG. 15, during a certain threshold voltage real time sensing driving period PSD #i during an i-th (i = 2, ..., n) th threshold voltage, (V2 (i)) applied to the second node N2 of the driving transistor DRT during the previous i-1th threshold voltage real time sensing driving period PSD # i-1, )) (V2 (i-1) = V2 (i)).

The potential difference V21 between the second node N1 of the driving transistor DRT and the first node N1 at the end of the (i-1) th threshold voltage real time sensing driving period PSD # i-1, in order to keep the potential difference V21 between the second node N1 of the driving transistor DRT and the first node N1 at the start of the ith threshold voltage real time sensing driving period PSD #i, the initialization voltage V1 (i (i)) applied to the first node N1 of the driving transistor DRT at the time when the i-th threshold voltage real time sensing driving period PSD #i starts ) Is supplied to the driving transistor DRT at the end of the previous (i-1) th threshold voltage real time sensing driving period PSD # i-1 (the middle point of the time interval corresponding to the voltage following step S420) (V1B (i-1)) of the first node N1 of the first node N1.

The initialization voltage Vdd applied to the first node N1 of the driving transistor DRT at the start of the i-th threshold voltage real time sensing driving period PSD #i (the time point corresponding to the initialization step S410) V1 (i) of the driving transistor DRT is at the start of the previous (i-1) th threshold voltage real time sensing driving period (PSD # i-1) May be different from the initializing voltage V1 (i-1) applied to the one node N1 (V1 (i)? V1 (i-1)).

Specifically, at the time point when the i-th threshold voltage real time sensing driving period PSD #i starts (at a time point corresponding to the initializing step S410), the initialization of the first node N1 of the driving transistor DRT The voltage V1 (i) is supplied to the driving transistor DRT at the time point when the previous (i-1) th threshold voltage real time sensing driving period PSD # i-1 starts (at the time of the initialization step S410) (V1 (i) > V1 (i-1)) applied to the first node N1 of the first node N1.

The constant voltage of the second node N2 of the driving transistor DRT is fixed and the initial voltage applied to the first node N1 of the driving transistor DRT at the start of each threshold voltage real time sensing driving period is set to The initializing voltage applied to the first node N1 of the driving transistor DRT at the start of the threshold voltage real time sensing driving period starts at the time when the previous threshold voltage real time sensing driving period ends, DRT), the state between the threshold voltage real time sensing driving can be maintained (V21 is maintained). Accordingly, the n-th threshold voltage real time sensing driving can proceed like a sensing driving though it actually progresses separately in time.

Referring to FIG. 14, the voltage change of the first node N1 of the driving transistor DRT according to the four threshold voltage real time sensing driving when n = 4 will be described. 16, a positive threshold voltage change amount (Positive? Vth) and a negative threshold voltage change amount (Negative? Vth) in the case of having a positive threshold voltage change amount (Positive? Vth) and having a negative threshold voltage change amount (Negative? And the threshold voltage change amount DELTA Vth between the threshold voltage change amount DELTA Vth.

16, the second node N2 of the driving transistor DRT is supplied with the same constant voltage (for example, 1 V) during four threshold voltage real time sensing driving periods (PSD # 1, PSD # 2, Vdata + Vini) is applied. That is, V2 (1) = V2 (2) = V2 (3) = V2 (4).

Referring to FIG. 16, when threshold voltage real time sensing driving is performed four times for threshold voltage sensing for one subpixel, when the first threshold voltage real time sensing driving period (PSD # 1) starts, The initialization voltage Vini corresponding to V1 (1) is applied to the first node N1 of the driving transistor DRT and V2 (1) is applied to the second node N2 of the driving transistor DRT. (Vdata + Vini) corresponding to the voltage Vdata is applied.

Thereafter, the first node N1 of the driving transistor DRT is floated, and the voltage rise of the first node N1 of the driving transistor DRT occurs. The first threshold voltage real time sensing driving period PSD # 1 ends after the time T1 of the first threshold voltage real time sensing driving period PSD # 1 has elapsed. At this time, The voltage of one node N1 becomes V1B (1).

When the first threshold voltage real time sensing driving period PSD # 1 is finished and the picture driving period VD is finished and the picture driving period VD ends, the second threshold voltage real time sensing driving period PSD # Is restarted.

When the second threshold voltage real time sensing driving period (PSD # 2) starts, the initialization step proceeds and a positive voltage (Vdata + Vini) corresponding to V2 (2) is applied to the second node N2 of the driving transistor DRT The same applies.

The initialization voltage V1 (2) is applied to the first node N1 of the driving transistor DRT. The initialization voltage V1 (2) is applied to the first node N1 of the driving transistor DRT at a point of time when the first threshold voltage real time sensing driving period PSD # Is equal to the voltage V1B (1) of the first node N1 of the driving transistor DRT (V1 (2) = V1B (1)).

Therefore, at the time point when the first threshold voltage real time sensing driving period PSD # 1 ends and the second threshold voltage real time sensing driving period PSD # 2 starts, the second node N2 of the driving transistor DRT, The potential difference V21 between the first node N1 and the first node N1 is maintained.

Thereafter, the first node N1 of the driving transistor DRT is floated, and the voltage rise of the first node N1 of the driving transistor DRT occurs. The second threshold voltage real time sensing driving period PSD # 2 ends after the time T2 of the second threshold voltage real time sensing driving period PSD # 2 has elapsed. At this time, The voltage of one node N1 becomes V1B (2).

After the second threshold voltage real time sensing driving period PSD # 2 ends, the picture driving period VD progresses and the picture driving period VD ends, the third threshold voltage real time sensing driving period PSD # Is restarted.

When the third threshold voltage real time sensing driving period PSD # 3 starts, the initialization step proceeds and a constant voltage Vdata + Vini corresponding to V2 (3) is applied to the second node N2 of the driving transistor DRT The same applies.

The initialization voltage V1 (3) is applied to the first node N1 of the driving transistor DRT at the time when the second threshold voltage real time sensing driving period PSD # 2 ends Is equal to the voltage V1B (2) of the first node N1 of the driving transistor DRT (V1 (3) = V1B (2)).

Therefore, at the time point when the second threshold voltage real time sensing driving period PSD # 2 ends and the third threshold voltage real time sensing driving period PSD # 3 starts, the second node N2 of the driving transistor DRT, The potential difference V21 between the first node N1 and the first node N1 is maintained.

Thereafter, the first node N1 of the driving transistor DRT is floated, and the voltage rise of the first node N1 of the driving transistor DRT occurs. The third threshold voltage real time sensing driving period PSD # 3 ends after the time T3 of the third threshold voltage real time sensing driving period PSD # 3 has elapsed. At this time, The voltage of one node N1 becomes V1B (3).

When the third threshold voltage real time sensing driving period PSD # 3 is finished and the picture driving period VD is finished and the picture driving period VD ends, the fourth threshold voltage real time sensing driving period PSD # Is restarted.

When the fourth threshold voltage real time sensing driving period (PSD # 4) starts, the initialization step proceeds and a constant voltage (Vdata + Vini) corresponding to V2 (4) is applied to the second node N2 of the driving transistor DRT The same applies.

The initializing voltage V1 4 is applied to the first node N1 of the driving transistor DRT and the initializing voltage V1 4 is applied to the first node N1 of the driving transistor DRT at a point of time when the third threshold voltage real time sensing driving period PSD # Is equal to the voltage V1B (3) of the first node N1 of the driving transistor DRT (V1 (4) = V1B (3)).

Therefore, at the time point when the third threshold voltage real time sensing driving period PSD # 3 ends and the fourth threshold voltage real time sensing driving period PSD # 4 starts, the second node N2 of the driving transistor DRT, The potential difference V21 between the first node N1 and the first node N1 is maintained.

Thereafter, the first node N1 of the driving transistor DRT is floated, and the voltage rise of the first node N1 of the driving transistor DRT occurs. The fourth threshold voltage real time sensing driving period PSD # 4 ends after the time T4 of the fourth threshold voltage real time sensing driving period PSD # 4 has elapsed. At this time, The voltage of the node N1 becomes V1B (4).

V4B corresponding to the voltage of the first node N1 of the driving transistor DRT corresponds to the saturation voltage at the end of the last fourth threshold voltage real time sensing driving period PSD # do.

Accordingly, at the end of the fourth threshold voltage real time sensing driving period PSD # 4, the sensing unit 300 outputs V1B (4) corresponding to the saturation voltage of the first node N1 of the driving transistor DRT as a reference Through the voltage line RVL or the sensing node Ns. At this time, the sensed voltage Vsen may be expressed by a voltage form including a threshold voltage Vth or a threshold voltage variation (DELTA Vth, threshold voltage deviation).

The compensation unit 320 may compensate the threshold voltage or the threshold voltage variation (threshold voltage variation) of the driving transistor DRT based on the sensed voltage Vsen.

The OLED display 100 according to the present embodiment is capable of detecting the characteristic value of the driving transistor DRT (e.g., a threshold voltage) or a characteristic value change amount (e.g., a threshold voltage The amount of change) can be sensed in real time while the power is on.

17 is a conceptual diagram illustrating sensing and compensation using the threshold voltage real time sensing driving of the OLED display 100 according to the present embodiments.

17, the OLED display 100 according to the present embodiment includes an organic light emitting display panel 110 having a plurality of subpixels each including an organic light emitting diode (OLED) and a driving transistor DRT (PSD # 1, PSD # 2, ..., PSD #n, n are two or more natural numbers) of two or more threshold voltage real time sensing drives for the same subpixel SP during the blank time period And a sensing unit 300 sensing the voltage of the first node N1 (e.g., a source node or a drain node) of the driving transistor DRT in the subpixel SP more than twice.

The sensing unit 300 senses the voltage of the first node N1 of the driving transistor DRT more than twice more than the threshold voltage real time sensing driving periods PSD # 1, PSD # 2, ..., PSD # n ) At the end of the line.

At this time, the voltage sensed last during the sensing more than two times becomes the final voltage that can sense the characteristic value or the characteristic value change amount of the driving transistor DRT.

The image driving period VD may exist between the intervals where the sensing unit 300 senses two or more times (threshold voltage real time sensing interval).

As described above, by performing two or more times of sensing for two or more blank time periods with respect to the same subpixel SP, the sensing time is too long to enable sensing that was impossible during one blank time period.

Referring to FIG. 17, the compensating unit 320 may compensate the characteristic value or the characteristic value change amount of the driving transistor DRT based on the last sensed voltage among the voltages sensed more than twice.

As described above, since the sensing time is so long that sensing that was impossible during image driving becomes possible even during image driving, the compensation may also be made at a faster timing in real time.

As described above with reference to FIG. 11, if the characteristic value or the characteristic value change amount of the driving transistor DRT can not be sensed for two or more blank time periods with respect to the same subpixel SP during the blank time period, The characteristic value or the characteristic value change amount of the remaining driving transistors can be sensed with respect to the same subpixel SP and the characteristic value or the characteristic value variation amount of the driving transistor can be compensated when the next power source is turned on.

FIGS. 19 to 23 illustrate the threshold voltage real-time sensing during the blank time interval with respect to the threshold voltage of the entire region of the OLED display panel.

19, the OLED display panel 110 includes two or more reference voltage lines RVL arranged in a first direction (a row direction (horizontal direction in FIG. 19)), A first node of two or more driving transistors may be connected in a column direction and a first node of one driving transistor may be connected in a second direction (a column direction (vertical direction in Fig. 19)). In this case, the reference voltage Vref is applied through two or more reference voltage lines RVL in a row direction (horizontal direction in Fig. 19). 16, in the case of the four threshold voltage real time sensing driving periods (PSD # 1, PSD # 2, PSD # 3, and PSD # 4) The threshold voltage for one node can be separated in time and sensed.

On the other hand, since the blank time is short, the driving transistors in the column direction connected to the respective reference voltage lines during the four threshold voltage real time sensing driving periods (PSD # 1, PSD # 2, PSD # 3 and PSD # The threshold voltage for the first node may not be separated in time and sensed. In this case, as shown in FIG. 20, for example, four threshold voltage real time sensing driving periods (PSD # 1, PSD # 2, PSD # 3, and PSD # 4) A plurality of threshold voltage real time sensing driving periods, for example, four threshold voltages, for example, four sensing voltages, for sensing a threshold voltage for a first node of a part of driving transistors in the column direction connected to each reference voltage line, The threshold voltage for the first node of the other part of the driving transistors in the column direction connected to the respective reference voltage lines during the real time sensing driving periods (PSD # 5, PSD # 6, PSD # 7 and PSD # 8) can do.

The organic light emitting display panel 110 may include at least two reference voltage lines RVL arranged in a column direction and at least two driving transistors connected to the reference voltage lines in a column direction, The first node may be connected. For example, as shown in FIG. 21, when the first node of two or more driving transistors is connected to both of the reference voltage lines RVL, during some of the n-th threshold voltage real time sensing driving periods, for example, four times (Left side in FIG. 21) of the respective reference voltage lines RVL during the threshold voltage real time sensing driving periods PSD # 1, PSD # 2, PSD # 3 and PSD # The threshold voltage for the first node of a part of the transistors may be separated in time and sensed. During each of the n-th threshold voltage real-time sensing driving periods, for example, four reference voltage lines RVL (The right side in FIG. 21) of the row direction of the row direction of the row direction (i.e., the right side in FIG. 21) of the row direction.

At this time, as shown in FIG. 22, both the subpixels in the row direction of each reference voltage line RVL during the eight times of real-time threshold voltage real-time sensing driving periods (PSD # 1 to PSD # 8) have.

The threshold voltage for the first node of the driver transistors in the column direction connected to one side of the row direction of each reference voltage line during the four threshold voltage real time sensing driving periods (PSD # 1 to PSD # 8) It may not be able to separate and sense. As shown in FIG. 23, during some of the n-th threshold voltage real time sensing driving periods, for example, during four threshold voltage real time sensing driving periods (PSD # 1, PSD # 3, PSD # 5 and PSD # 7) The threshold voltages of the first nodes of the driving transistors in the column direction connected to one side of the row direction of each reference voltage line can be separated in time and sensed. During a different portion of the n-th threshold voltage real-time sensing driving periods, for example, four rows of threshold voltage real sensing driving periods (PSD # 2, PSD # 4, PSD # 6, PSD # The threshold voltage for the first node of a part of the driving transistors in the column direction coupled to the other side of the direction may be separated in time and sensed.

Similarly, during a different part of the n-th threshold voltage real time sensing driving periods, during the four threshold voltage real time sensing driving periods (PSD # 9, PSD # 11, PSD # 13, PSD # 15) The threshold voltage for the first node of the other part of the driving transistors in the column direction connected to one side of the transistor may be separated in time and sensed. During a different part of the n-th threshold voltage real time sensing driving periods, during the four times of threshold voltage real time sensing driving periods (PSD # 10, PSD # 12, PSD # 14, PSD # 16) The threshold voltage for the first node of the other part of the driving transistors in the column direction coupled to the first node may be separated in time and sensed.

19 through 23, the threshold voltage real-time sensing is performed for the threshold voltage of the entire region of the organic light emitting display panel during the blank time period, but various combinations thereof are possible. When the power off signal is generated during the blank time period for the threshold voltage of the entire region of the OLED display panel described with reference to FIGS. 19 to 23, as described with reference to FIGS. 11 and 18, Can be performed after the power-off signal is generated.

21 to 23 illustrate the case where two subpixels are connected to each reference voltage line RVL. However, even when there are three or more subpixels connected to each reference voltage line RVL, for example, four subpixels 21 to 23 can be performed four times.

According to the above-described threshold voltage real-time sensing driving method, sensing performed twice or more for the same sub-pixel SP makes it possible to perform sensing that was impossible during image driving because the sensing time is too long.

According to the embodiments described above, it is possible to provide the OLED display 100 and the driving method thereof, which enable the sensing operation of the characteristic value between the driving transistors to proceed in real time while the power is on.

In addition, according to the present embodiments, it is possible to provide the organic light emitting display 100 and the driving method thereof, which enable the sensing operation of the characteristic value between the driving transistors to proceed in real time while the image is being driven.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. , Separation, substitution, and alteration of the invention will be apparent to those skilled in the art. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: organic light emitting display
110: organic light emitting display panel
120: Data driver
130: Gate driver
140: controller

Claims (15)

An organic light emitting display panel in which a plurality of data lines and a plurality of gate lines are arranged and in which a plurality of subpixels are arranged;
A data driver for driving the plurality of data lines;
A gate driver for driving the plurality of gate lines; And
And a controller for controlling the data driver and the gate driver,
There are n (n? 2) threshold voltage real time sensing driving periods for sensing the threshold voltage of the driving transistors in the subpixels of the organic light emitting display panel, and all of the nth threshold voltage real time sensing driving periods Or part thereof is included in a blank time period. The method according to claim 1,
When a part of the n threshold voltage real time sensing driving periods is included in the blank time period,
Wherein the remaining of the n number of threshold voltage real time sensing driving periods exists after a power-off signal is generated. The method according to claim 1,
Wherein the first node of the driving transistor for driving the organic light emitting diode in each of the at least one subpixel to be sensed during the respective threshold voltage real time sensing driving period is saturated to saturate. The method according to claim 1,
In each of the subpixels to be sensed during the respective threshold voltage real time sensing driving periods, a voltage is raised at a first node of a driving transistor for driving the organic light emitting diode, and a constant voltage is applied to a second node of the driving transistor The organic light emitting display device comprising: 5. The method of claim 4,
During the first threshold voltage real time sensing driving period to the (n-1) th threshold voltage real time sensing driving period of the n number of threshold voltage real time sensing driving periods, the voltage of the first node of the driving transistor is increased but not saturated ,
and a voltage of a first node of the driving transistor is saturated in an nth threshold voltage real time sensing driving period. 5. The method of claim 4,
A sensing unit for sensing a voltage of a first node of the driving transistor at the end of the threshold voltage real time sensing driving period; And
And a memory for storing data on the sensed voltage of the first node of the driving transistor at the end of the threshold voltage real time sensing driving period. 5. The method of claim 4,
A threshold voltage or a threshold voltage variation of the driving transistor is compensated based on a sensed voltage of the first node of the driving transistor at the end of the last threshold voltage real time sensing driving period among the n number of threshold voltage real time sensing driving periods Further comprising a compensator. 5. The method of claim 4,
Wherein the organic light emitting display panel includes two or more reference voltage lines arranged in a first direction and a first node of two or more driving transistors connected to each reference voltage line in a first direction and a first node of one driving transistor in a second direction, Lt; / RTI &gt;
And a threshold voltage for a first node of the driving transistors in a first direction connected to each of the reference voltage lines is sequentially separated in time during the nth threshold voltage real time sensing driving period. 5. The method of claim 4,
Wherein the organic light emitting display panel includes two or more reference voltage lines arranged in a first direction and a first node of two or more driving transistors connected to each reference voltage line in a first direction and a first node of one driving transistor in a second direction, Lt; / RTI &gt;
Sensing a threshold voltage for a first node of a part of driving transistors in a first direction connected to each reference voltage line in a time-division manner for a part of the n-th threshold voltage real time sensing driving periods, And the threshold voltage for the first node of the other part of the driving transistors in the column direction connected to each reference voltage line during a different one of the driving periods is separated in time and sensed. 5. The method of claim 4,
Wherein the organic light emitting display panel includes two or more reference voltage lines arranged in a first direction and a first node of two or more driving transistors connected to each reference voltage line in a first direction and a first node of two or more driving transistors in a second direction, Lt; / RTI &gt;
A threshold voltage for a first node of a part of driving transistors in a first direction connected to one side of each of the reference voltage lines in a part of the n-th threshold voltage real time sensing driving sections is separated in time and sensed, n-order threshold voltages The threshold voltages for the first node of the other portion of the driving transistors in the first direction connected to the other side of the second direction of each reference voltage line for different portions of the real-time sensing driving periods are separated in time and sensed Organic light emitting display. 5. The method of claim 4,
Wherein the organic light emitting display panel includes two or more reference voltage lines arranged in a first direction and a first node of two or more driving transistors connected to each reference voltage line in a first direction and a first node of two or more driving transistors in a second direction, Lt; / RTI &gt;
A threshold voltage for a first node of a part of driving transistors in a first direction connected to one side of each of the reference voltage lines in a part of the n-th threshold voltage real time sensing driving periods is separated in time and sensed,
A threshold voltage for a first node of a part of driving transistors in a first direction connected to the other side of the second direction of each reference voltage line during a different one of the n-th threshold voltage real time sensing driving periods,
The threshold voltage for the first node of the other part of the driving transistors in the first direction connected to one of the second direction of each reference voltage line during a different part of the n-th threshold voltage real time sensing driving periods is separated in time and sensed ,
The threshold voltage for the first node of the other part of the driving transistors in the first direction connected to the other side of the second direction of each reference voltage line during a different one of the n-turn threshold voltage real time sensing driving periods is separated in time and sensed Organic light emitting display. An organic light emitting display panel including a plurality of subpixels including an organic light emitting diode and a driving transistor; And
And a sensing unit for sensing a threshold voltage of a driving transistor in subpixels of the organic light emitting display panel during n (n &gt; = 2) threshold voltage real time sensing driving periods in which all or part of the pixels are included in a blank time interval. Display device. 13. The method of claim 12,
When a part of the n threshold voltage real time sensing driving periods is included in the blank time period,
Wherein the remaining of the n number of threshold voltage real time sensing driving periods exists after a power-off signal is generated. 13. The method of claim 12,
Wherein the first node of the driving transistor for driving the organic light emitting diode in each of the at least one subpixel to be sensed during the respective threshold voltage real time sensing driving period is saturated to saturate. 13. The method of claim 12,
In each of the subpixels to be sensed during the respective threshold voltage real time sensing driving periods, a voltage is raised at a first node of a driving transistor for driving the organic light emitting diode, and a constant voltage is applied to a second node of the driving transistor The organic light emitting display device comprising:

Images