KR20180039804A - Controller, organic light emitting display device and method for driving thereof - Google Patents

Abstract

Embodiments of the present invention relate to a technology of sensing deterioration of sub-pixels included in an organic light emitting display device. Deterioration of the K number of reference sub-pixels among the N number of sub-pixels is sensed by a single sensing method during a first sensing time. Deterioration of the (K+1) number of sub-pixels including the K number of reference sub-pixels is sensed by a multiple sensing method during a second sensing time. Deterioration sensing values of sub-pixels other than the reference sub-pixels are calculated by using the difference between a value, sensed during the first sensing time, and a value, sensed during the second sensing time. Accordingly, a problem that a deterioration sensing time of sub-pixels in an area with a low driving current becomes long is solved. Accuracy of sensing is maintained by extracting a deterioration sensing value of each sub-pixel from the sensing values of the single sensing method and multiple sensing method.

Description

TECHNICAL FIELD [0001] The present invention relates to a controller, an organic light emitting diode (OLED) display, and a driving method of the organic light emitting display.

The present embodiments relate to an organic light emitting display, a driving method thereof, and a controller included in the organic light emitting display.

BACKGROUND ART [0002] Organic light emitting displays (OLEDs), which have been popular as display devices in recent years, use an organic light emitting diode (OLED) to emit light by itself. Thus, they have a high response speed and a high contrast ratio, luminous efficiency, luminance and viewing angle.

The OLED display includes an OLED display panel in which a plurality of gate lines and a plurality of data lines are arranged and subpixels are defined in a region where gate lines and data lines cross each other, A data driver for driving the data lines, and a controller for controlling driving of the gate driver and the data driver.

The plurality of subpixels arranged in the organic light emitting display panel of the organic light emitting diode display are driven by a scan signal applied to the gate line and emit light according to a gray level of a data voltage applied through the data line to display an image.

Such a subpixel may include a circuit element such as an organic light emitting diode (OLED) and a driving transistor for driving the organic light emitting diode (OLED).

The circuit elements included in such a subpixel may undergo degradation according to the driving time of the organic light emitting display device. When the deterioration of the circuit element progresses, inherent characteristic values (e.g., threshold voltage, Can be changed.

Such a change in the characteristic value of the circuit element can prevent the gradation according to the data voltage applied to the corresponding subpixel from being expressed accurately, thereby causing a display failure such as a luminance deviation for each position of the organic light emitting display panel.

It is an object of the present embodiments to provide an organic light emitting display device which senses deterioration of a circuit element included in a sub pixel of an organic light emitting display panel and performs compensation according to deterioration and a driving method thereof.

It is an object of the present embodiments to provide an organic light emitting display device and a method of driving the same that reduce a deterioration sensing time of a circuit element included in a sub pixel of an organic light emitting display panel and improve the accuracy of a deterioration sensing value.

In one aspect, the present embodiments relate to an organic light emitting display panel in which a plurality of subpixels are arranged and a deterioration of a circuit element included in the subpixel (hereinafter also referred to as "deterioration of subpixels" And a sensing unit for sensing the organic light emitting display device.

Such an organic light emitting display device may be driven by a scan signal applied to the same gate line among the sub-pixels arranged in the organic light emitting display panel and simultaneously sense deterioration of N sub-pixels connected to the same sensing line.

For example, the sensing unit senses deterioration of K reference subpixels among the N subpixels during the first sensing time, respectively, and detects degradation of (K + 1) subpixels including K reference subpixels during the second sensing time At the same time.

The sensing unit may sense deterioration of the subpixels other than the reference subpixel using the difference between the sensing value obtained during the first sensing time and the sensing value obtained during the second sensing time.

Specifically, the sensing unit performs deterioration sensing for the K reference sub-pixels, and then simultaneously performs degradation sensing for the (K + 1) sub-pixels including the K reference sub-pixels.

(K + 1) times the value obtained by subtracting 1 / (K + 1) of the deterioration sensing value of the K reference sub-pixels from the sensing value obtained during the second sensing time, As the degradation sensing value.

Here, the first sensing time for performing the deterioration sensing for the reference subpixel may be a time longer than the second sensing time.

At this time, the second sensing time for simultaneously performing the deterioration sensing for the (K + 1) sub-pixels may be 1 / (K + 1) of the first sensing time.

In another aspect, the present embodiments provide a method comprising: performing degradation sensing for K reference subpixels, respectively, of N subpixels during a first sensing time; and (K + 1) number of subpixels; sensing deterioration of the subpixels other than the reference subpixel using the sensing value obtained during the first sensing time and the sensing value obtained during the second sensing time; The present invention also provides a method of driving an organic light emitting display.

In another aspect, the present embodiments provide a sensing data voltage control unit for controlling a sensing data voltage to be applied to a first node of a driving transistor included in one or more subpixels to be sensed in a sensing period, If the applied driving transistor is one, the sensing transistor connected to the second node of the driving transistor is turned on after the first sensing time, and if the sensing transistor is turned on after the second sensing time, And a sensing unit sensing a voltage of a second node of the driving transistor when the sensing transistor is turned on and sensing a deterioration of the driving transistor using the sensed voltage value.

Here, when the sensing data voltage is applied to the plurality of driving transistors simultaneously, if the number of the driving transistors to which the sensing data voltage is applied is K, the voltage value obtained through sensing during the first sensing time may be (K-1) .

According to the embodiments, the deterioration of the subpixels of the organic light emitting display panel is sensed and compensation is performed based on the sensed values, thereby preventing a display failure due to degradation of the subpixels.

According to the embodiments, the deterioration of a plurality of subpixels arranged in the organic light emitting display panel is simultaneously sensed, thereby reducing the time required for deterioration of the subpixels, so that deterioration of the subpixels can be easily sensed without additional waiting time .

According to the embodiments, the deterioration sensing value of the subpixels other than the reference subpixel is calculated using the sensing value obtained through the deterioration sensing of the reference subpixel and the deterioration sensing of the plurality of subpixels, So that the accuracy of the sensing value can be improved while reducing the time.

FIG. 1 is a diagram showing a schematic configuration of an organic light emitting display according to the present embodiments.
FIG. 2 is a view illustrating an example of a sub-pixel structure and sub-pixel deterioration sensing included in the organic light emitting diode display according to the present embodiments.
FIG. 3 is a diagram illustrating an example of a sensing value obtained through sub-pixel deterioration sensing in FIG.
4 is a diagram illustrating a method of sensing deterioration of a reference sub-pixel according to an embodiment of the present invention.
FIG. 5 is a diagram illustrating a method of simultaneously sensing the deterioration of a plurality of subpixels in the organic light emitting display according to the present embodiments. Referring to FIG.
6 to 9 are views illustrating an example of a method of simultaneously sensing the deterioration of a plurality of subpixels based on the deterioration sensing value of one reference subpixel in the organic light emitting display according to the present embodiments.
FIGS. 10 to 13 illustrate examples of a method of simultaneously sensing the deterioration of a plurality of subpixels based on the deterioration sensing value of two reference subpixels in the organic light emitting diode display according to the present embodiments.
FIG. 14 is a diagram showing a schematic configuration of a controller of an organic light emitting display according to the present embodiments.
FIG. 15 is a flowchart illustrating a method of driving an organic light emitting display according to an embodiment of the present invention. Referring to FIG.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. In the drawings, like reference numerals are used to denote like elements throughout the drawings, even if they are shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

In describing the components of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the components from other components, and the terms do not limit the nature, order, order, or number of the components. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; intervening "or that each component may be" connected, "" coupled, "or " connected" through other components.

FIG. 1 shows a schematic configuration of an OLED display 100 according to the present embodiments.

1, the OLED display 100 includes a plurality of gate lines GL and a plurality of data lines DL, a plurality of sub-pixels SP, A gate driver 120 for driving the plurality of gate lines GL, a data driver 130 for driving the plurality of data lines DL, a gate driver 120 And a controller 140 for controlling the data driver 130 and the like.

The gate driver 120 sequentially drives the plurality of gate lines GL by sequentially supplying scan signals to the plurality of gate lines GL.

The gate driver 120 sequentially supplies the scan signals of the ON voltage or the OFF voltage to the plurality of gate lines GL under the control of the controller 140 to sequentially supply the plurality of gate lines GL And sequentially driven.

The gate driver 120 may be located on one side of the organic light emitting display panel 110 or on both sides of the organic light emitting display panel 110 according to the driving method.

In addition, the gate driver 120 may include one or more gate driver integrated circuits.

Each gate driver integrated circuit may be connected to a bonding pad of the organic light emitting display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) method, (Gate In Panel) type and may be directly disposed on the organic light emitting display panel 110.

The organic light emitting display panel 110 may be integrated with the organic light emitting display panel 110 or may be implemented as a chip on film (COF) method mounted on a film connected to the organic light emitting display panel 110.

The data driver 130 drives the plurality of data lines DL by supplying data voltages to the plurality of data lines DL.

The data driver 130 converts image data received from the controller 140 into analog data voltages and supplies the image data to the plurality of data lines DL so that a plurality of data lines DL are formed. .

The data driver 130 may include at least one source driver integrated circuit to drive a plurality of data lines DL.

Each source driver integrated circuit may be connected to a bonding pad of the organic light emitting display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) And may be directly disposed on the organic light emitting display panel 110 or may be integrated on the organic light emitting display panel 110. [

In addition, each source driver integrated circuit may be implemented by a chip on film (COF) method. In this case, one end of each source driver integrated circuit is bonded to at least one source printed circuit board, and the other end is bonded to the organic light emitting display panel 110.

The controller 140 supplies various control signals to the gate driver 120 and the data driver 130 to control the gate driver 120 and the data driver 130.

The controller 140 starts scanning according to the timing implemented in each frame, switches the input image data input from the outside according to the data signal format used by the data driver 130, and outputs the converted image data , And controls the data driving at a proper time according to the scan.

The controller 140 outputs various timing signals including a vertical synchronization signal Vsync, a horizontal synchronization signal Hsync, an input data enable (DE) signal, and a clock signal (CLK) From an external (e.g., host system).

The controller 140 outputs the switched image data by switching the input image data inputted from the outside according to the data signal format used by the data driver 130 and outputs the converted image data to the gate driver 120 and the data driver 130, A timing signal such as a vertical synchronization signal Vsync, a horizontal synchronization signal Hsync, an input data enable signal DE and a clock signal CLK to generate various control signals, 120, and the data driver 130, respectively.

For example, to control the gate driver 120, the controller 140 may include a gate start pulse (GSP), a gate shift clock (GSC), a gate output enable signal GOE Gate Output Enable), and the like.

Here, the gate start pulse GSP controls the operation start timing of one or more gate driver integrated circuits constituting the gate driver 120. The gate shift clock GSC is a clock signal commonly input to one or more gate driver integrated circuits, and controls the shift timing of the scan signal (gate pulse). The gate output enable signal GOE specifies the timing information of one or more gate driver ICs.

In order to control the data driver 130, the controller 140 may further include a source start pulse (SSP), a source sampling clock (SSC), and a source output enable signal (SOE) And outputs various data control signals (DCS: Data Control Signals).

Here, the source start pulse SSP controls the data sampling start timing of one or more source driver integrated circuits constituting the data driver 130. The source sampling clock SSC is a clock signal for controlling sampling timing of data in each of the source driver integrated circuits. The source output enable signal SOE controls the output timing of the data driver 130.

The controller 140 is connected to a source printed circuit board to which a source driver integrated circuit is bonded and a control printed circuit board (not shown) connected via a connection medium such as a flexible flat cable (FFC) or a flexible printed circuit (Control Printed Circuit Board) (not shown).

A power controller (not shown) for controlling various voltages or currents to supply or supply various voltages or currents to the organic light emitting display panel 110, the gate driver 120, the data driver 130, . These power controllers are also referred to as power management ICs.

Each sub-pixel disposed in the organic light emitting display panel 110 in the organic light emitting diode display 100 may include a circuit element such as an organic light emitting diode (OLED), two or more transistors, and at least one capacitor. have.

The types and the number of the circuit elements constituting each subpixel can be variously determined according to the providing function, the design method, and the like.

2 illustrates an example of a sub-pixel structure disposed in the organic light emitting display panel 110 according to the present embodiments.

Referring to FIG. 2, each sub-pixel includes an organic light emitting diode OLED and a driving transistor DRT for driving the organic light emitting diode OLED.

The storage capacitor Cst electrically connected between the first node N1 and the second node N2 of the driving transistor DRT and the storage capacitor Cst electrically connected to the first node N1 of the driving transistor DRT, And a sensing transistor SENT electrically connected between the second node N2 of the driving transistor DRT and the corresponding sensing line SL. The switching transistor SWT is electrically connected between the data line DL and the corresponding data line DL, . ≪ / RTI >

The organic light emitting diode OLED includes a first electrode (e.g., an anode electrode or a cathode electrode), an organic layer, and a second electrode (e.g., a cathode electrode or an anode electrode).

For example, the first electrode of the organic light emitting diode OLED may be connected to the second node N2 of the driving transistor DRT, and the second electrode of the organic light emitting diode OLED may be grounded have.

The driving transistor DRT is a transistor for driving the organic light emitting diode OLED by supplying a driving current to the organic light emitting diode OLED and includes a first node N1 corresponding to a gate node, And a third node N3 corresponding to a drain node or a source node.

The switching transistor SWT is a transistor for transferring a data voltage to the first node N1 of the driving transistor DRT and electrically connected between the first node N1 of the driving transistor DRT and the data line DL And may be turned on by a scan signal applied to the gate node to transfer the data voltage to the first node N1 of the driving transistor DRT.

The storage capacitor Cst is electrically connected between the first node N1 and the second node N2 of the driving transistor DRT to maintain a constant voltage for one frame.

The sensing transistor SENT may be controlled by a signal electrically connected between the second node N2 of the driving transistor DRT and the sensing line SL and applied to the gate node.

The sensing transistor SENT may be turned on to apply the reference voltage Vref supplied through the sensing line SL to the second node N2 of the driving transistor DRT.

The sensing transistor SENT may be used to sense a characteristic value (e.g., threshold voltage, mobility, etc.) of a circuit element such as an organic light emitting diode OLED or a driving transistor DRT included in a subpixel .

The sense line SL is initialized in the sensing period and the sensing data voltage Vdatas is applied to the first node N1 of the driving transistor DRT and the second node N2 of the driving transistor DRT is applied. The reference voltage Vref is applied. Then, the voltage of the second node N2 is caused to float by turning off the switching transistor SWT and the sensing transistor SENT.

When the predetermined time has elapsed, the sensing transistor SENT is turned on and the voltage of the second node N2 of the driving transistor DRT is sensed through the sensing line SL.

3 shows an example of the voltage of the second node N2 of the driving transistor DRT obtained through the above-described method.

3, the sensing data voltage Vdatas and the reference voltage Vref are applied to the first node N1 and the second node N2 of the driving transistor DRT, respectively, When the transistor SENT is turned off, the voltage of the second node N2 rises.

The voltage of the second node N2 of the driving transistor DRT converges to a predetermined value and a threshold voltage of the driving transistor DRT can be sensed through the second node N2.

It is possible to measure the degree of deterioration of the driving transistor DRT by sensing the threshold voltage of the driving transistor DRT and compensate according to the measured degree of deterioration to thereby prevent the luminance deviation due to deterioration of the circuit elements included in the sub- .

As shown in FIG. 3, in order to sense the threshold voltage of the driving transistor DRT, it takes time for the voltage of the second node N2 of the driving transistor DRT to converge to a constant value. There is a problem that it is difficult to perform while the display apparatus 100 is being driven.

Therefore, although the threshold voltage of the driving transistor DRT can be measured after the organic light emitting display 100 is turned off, there is a problem that the organic light emitting display 100 can not sense deterioration when the organic light emitting display 100 is driven for a long time There is a problem that additional waiting time occurs for such deterioration sensing.

The present embodiments provide a sensing method for simultaneously reducing the deterioration sensing time of a subpixel and improving the accuracy of deterioration sensing by simultaneously sensing the deterioration of the driving transistor DRT included in a plurality of subpixels.

FIGS. 4 and 5 illustrate the manner in which the OLED display 100 according to the present embodiments performs degradation of sub-pixels.

The organic light emitting diode display 100 according to the present embodiment is configured to control the deterioration of a plurality of subpixels among N subpixels driven by a scan signal applied to the same gate line GL and connected to the same sensing line SL Simultaneous sensing and sensing values are generated.

To this end, the deterioration of K reference subpixels among the N subpixels is respectively sensed for a first sensing time, and then (K + 1) degradations including K reference subpixels are detected for a second Sensing during the sensing time.

By sensing the deterioration of the subpixels other than the reference subpixel using the deterioration sensing value of the reference subpixel and the deterioration sensing value of the plurality of subpixels, the time required for deterioration sensing is reduced while maintaining the accuracy of the deterioration sensing value .

FIG. 4 shows a step of sensing the deterioration of a reference sub-pixel according to the embodiments of the present invention, and FIG. 5 shows a step of sensing deterioration of a plurality of sub-pixels including a reference sub-pixel will be.

4 and 5 illustrate two subpixels for illustrative convenience. The N subpixels sensed at the same time by the present embodiments may be three, four, or the like depending on the structure of the subpixel.

Referring to FIG. 4, degradation sensing of a subpixel corresponding to a reference subpixel is performed in a first sensing period, and a reference subpixel is a white (W) subpixel.

The sensing data voltage Vdatas_w is applied to the first node N1 of the driving transistor DRT included in the white subpixel in the sensing period and the switching transistor SWT and the sensing transistor SENT are turned off Thereby raising the voltage of the second node N2 of the driving transistor DRT.

When the first sensing time elapses, the sensing transistor SENT is turned on to sense the voltage of the second node N2 of the driving transistor DRT to measure the threshold voltage of the driving transistor DRT.

The sensing value obtained through sensing during the first sensing time is used as a sensing value for compensating deterioration of a white (W) sub-pixel which is a reference sub-pixel.

At this time, the sensing time becomes longer when the red (R) sub-pixel other than the reference sub-pixel is also sensed during the first sensing time which is the same as the reference sub-pixel.

Thus, the embodiments provide a way to reduce the sensing time by sensing deterioration at the same time as the reference sub-pixel and the sub-pixels other than the reference sub-pixel.

Referring to FIG. 5, in the sensing period after the deterioration sensing of the reference subpixel is performed, the deterioration of the white (W) subpixel which is the reference subpixel and the red (R) Sensing during the sensing time.

In this case, the second sensing time corresponds to a time shorter than the first sensing time, and may be, for example, one half of the first sensing time.

The sensing data voltage Vdatas_w is applied to the first node N1 of the driving transistor DRT included in the white subpixel in the sensing period and the driving transistor DRT included in the red subpixel is simultaneously applied with the sensing data voltage Vdatas_w, The data voltage Vdatas_r for sensing is applied to the first node N1.

Then, the voltage of the second node N2 of the driving transistor DRT is floated by turning off the switching transistor SWT and the sensing transistor SENT in each sub-pixel.

When the second sensing time elapses, the voltage of the second node N2 of the driving transistor DRT of the white (W) subpixel and the voltage of the driving transistor DRT of the red (R) And simultaneously senses the voltage of the second node N2.

The sensed voltage value includes both the deterioration sensing value of the white (W) subpixel and the deterioration sensing value of the red (R) subpixel.

Therefore, by using the deterioration sensing value of a plurality of subpixels obtained through sensing during the second sensing time and the deterioration sensing value of the reference subpixel obtained through sensing during the first sensing time, And the sensing value is calculated.

For example, subtracting one-half of the degradation sensing value of the white (W) sub-pixel which is the reference sub-pixel sensed during the first sensing time from the sensing value obtained through sensing during the second sensing time, The deterioration sensing value of the red (R) subpixel which is a subpixel other than the pixel can be calculated.

In other words, when the deterioration of a plurality of subpixels is simultaneously sensed, all of the degradation sensing values of the respective subpixels are included, so that a portion corresponding to the deterioration sensing value of the reference subpixel is removed, The sensing value can be obtained.

Accordingly, by sensing deterioration of a plurality of subpixels simultaneously, it is possible to reduce the time required for the degradation sensing of the subpixels and reduce the deterioration of the subpixels by using the deterioration sensing value of the reference subpixel and the deterioration sensing value of the plurality of subpixels, The degradation sensing accuracy of the pixel can be maintained by calculating the degradation sensing value of the pixel.

Hereinafter, a method of sensing deterioration of four color subpixels and calculating a deterioration sensing value of each subpixel will be described in detail with reference to FIGS. 6 to 13. FIG.

FIGS. 6 to 9 show a case where the deterioration of red (R), white (W), green (G) and blue (B) subpixels are simultaneously sensed, .

Referring to FIG. 6, the deterioration of a white (W) subpixel as a reference subpixel during a first sensing period is sensed for a first sensing time Tsen.

The sensing data voltage Vdata is applied only to the driving transistor DRT of the white (W) subpixel and the voltage of the second node N2 of the driving transistor DRT is floated. Then, The sensing transistor SENT is turned on.

Accordingly, in the first sensing period, the deterioration of the reference sub-pixel is accurately sensed by sensing the deterioration of the reference sub-pixel during the first sensing time, which is a sufficient sensing time.

Then, in the sensing period, the deterioration of two subpixels including the white (W) subpixel, which is the reference subpixel, is simultaneously sensed to reduce the sensing time.

Referring to FIG. 7, in the second sensing period, the white (W) subpixel, which is the reference subpixel, and the red (R) subpixel other than the reference subpixel are simultaneously sensed during the second sensing time.

Here, the second sensing time may correspond to 0.5 * Tsen shorter than the first sensing time Tsen.

A sensing data voltage Vdatas is applied to the driving transistor DRT of the white (W) subpixel and the driving transistor DRT of the red (R) subpixel in the second sensing period, (N2).

At this time, when the second sensing time has elapsed, the sensing transistor SENT is turned on to simultaneously sense the deterioration of the white (W) and red (R) subpixels.

The deterioration sensing value of the red (R) subpixel can be calculated by subtracting 1/2 of the deterioration sensing value of the white (W) subpixel which is the reference subpixel from the sensed value in the second sensing period and doubling it.

Thus, by performing the deterioration sensing of the red (R) subpixel simultaneously with the white (W) subpixel, the time required for the degradation sensing of the red (R) subpixel is reduced and the deterioration of the red .

Referring to FIG. 8, during the third sensing period, the white (W) subpixel, which is the reference subpixel, and the green (G) subpixel, which is a subpixel other than the reference subpixel, are simultaneously sensed during the second sensing time.

As in the second sensing period, the deterioration of the white (W) and green (G) subpixels is simultaneously sensed during a second sensing time shorter than the first sensing time of the first sensing period.

The deterioration sensing value of the green (G) subpixel can be calculated by subtracting 1/2 of the deterioration sensing value of the white (W) subpixel from the obtained sensing value and doubling it.

FIG. 9 shows a fourth sensing period, in which a white (W) subpixel as a reference subpixel and a blue (B) subpixel as a subpixel other than the reference subpixel are simultaneously sensed during a second sensing time.

The deterioration sensing value of the blue (B) subpixel can be calculated in the same manner as the method of calculating the deterioration sensing value of the red (R) subpixel and the green (G) subpixel described above, The deterioration sensing value of the subpixel can be expressed by the following equation (1).

[Equation 1]

VsenW = VsenW

VsenR = 2 * (VsenRW - (1/2) * VsenW)

VsenG = 2 * (VsenGW - (1/2) * VsenW)

VsenB = 2 * (VsenBW - (1/2) * VsenW)

That is, the deterioration sensing value of each subpixel can be calculated using the sensing value for the first sensing time for the reference subpixel and the sensing value for the second sensing time for the plurality of subpixels including the reference subpixel have.

In addition, since the deterioration sensing time for the subpixels other than the reference subpixel is shorter than the deterioration sensing time of the reference subpixel, it is possible to reduce the overall sensing time required for sensing deterioration of the subpixel.

Accordingly, by sensing the deterioration of subpixels by mixing a single sensing scheme and a plurality of sensing schemes, the time required for the degradation sensing of the subpixels is reduced and the degradation sensing value of each subpixel can be calculated.

Meanwhile, in the organic light emitting diode display 100 according to the present embodiment, when deterioration of a plurality of subpixels is simultaneously sensed, deterioration of two subpixels may be simultaneously sensed, but the deterioration of three subpixels may be simultaneously sensed The deterioration sensing value of each subpixel may be calculated.

FIGS. 10 to 13 illustrate the case where the organic light emitting diode display 100 according to the present embodiment simultaneously detects deterioration of three sub-pixels.

In the case where the deterioration of three subpixels is simultaneously sensed in the organic light emitting diode display 100 according to the present embodiment, deterioration sensing is performed on the two reference subpixels in order to calculate the deterioration sensing value of each subpixel .

That is, if the deterioration of (K + 1) sub-pixels is simultaneously sensed, deterioration sensing is required for K reference sub-pixels.

FIGS. 10 and 11 illustrate a degradation sensing process for a reference subpixel, wherein the reference subpixel is a white (W) subpixel and a blue (B) subpixel.

Referring to FIG. 10, deterioration sensing is performed on a white (W) subpixel during a first sensing period in a first sensing period.

The sensing value obtained in the first sensing period corresponds to the deterioration sensing value of the white (W) subpixel, and compensation for the deterioration of the white (W) subpixel can be performed using the sensed value.

Referring to FIG. 11, deterioration sensing is performed for a blue (B) subpixel which is another reference subpixel in a second sensing period for a first sensing time.

The sensing value obtained in the second sensing period may be used as the degradation sensing value of the blue (B) subpixel to compensate for the deterioration of the blue (B) subpixel.

(W) and blue (B) subpixels, which are reference subpixels, in a first sensing period and a second sensing period, and then performs a deterioration sensing for a plurality of subpixels including a reference subpixel and another subpixel Lt; / RTI >

Referring to FIG. 12, there is shown a process of sensing degradation of red (R) subpixels which are subpixels other than the reference subpixel in the third sensing period.

(W) subpixel, a blue (B) subpixel and a red (R) subpixel, which are subpixels other than the reference subpixel, in the third sensing period during a second sensing time.

At this time, the second sensing time may be 0.5 * Tsen shorter than the first sensing time Tsen, but may be a time corresponding to (1/3) * Tsen.

When there are two reference subpixels, the deterioration of three subpixels is simultaneously sensed for deterioration sensing of subpixels other than the reference subpixel.

Accordingly, since the sensing data voltage Vdatas is applied to the three subpixels, the driving current may be increased and the sensing may be performed for a time corresponding to one third of the first sensing time, which is the deterioration sensing time of the reference subpixel.

That is, when the reference subpixel is K and the degradation sensing time for the reference subpixel is Tsen, the time for simultaneously sensing the deterioration of (K + 1) subpixels including the reference subpixel is (1 / K + 1 ) * Tsen.

The data voltage Vdata for sensing is applied to the white (W), blue (B), and red (R) subpixels in the third sensing period and the sensing transistor SENT is turned on Turn on and sense the deterioration of three subpixels simultaneously.

At this time, the deterioration sensing value of the white (W) subpixel, which is the reference subpixel, is subtracted from the sensed value by 1/3 of the deterioration sensing value of the blue (B) subpixel, Value can be calculated.

FIG. 13 shows a fourth sensing period, in which the deterioration of the green (G) sub-pixel, which is a sub-pixel other than the reference sub-pixel and the white (W) While sensing at the same time.

The deterioration sensing value of the green (G) subpixel can be calculated by subtracting 1/3 of the deterioration sensing value of the white (W) subpixel and the blue (B) subpixel from the sensed value in the fourth sensing period, In case where there are two reference subpixels, the degradation sensing value of each subpixel can be expressed as shown in Equation 2 below.

&Quot; (2) "

VsenW = VsenW

VsenB = VsenB

VsenR = 3 * (VsenRWB - (1/3) * VsenW - (1/3) * VsenB)

VsenG = 3 * (VsenGWB - (1/3) * VsenW - (1/3) * VsenB)

Accordingly, the deterioration of the white (W) and blue (B) subpixels, which are reference subpixels, can be sensed for a first sensing time and accurately sensed.

The deterioration of the red (R) subpixel and the green (G) subpixel, which are subpixels other than the reference subpixel, is obtained by using the degradation sensing value for the three subpixels and the degradation sensing value of the reference subpixel during the second sensing time .

Therefore, the deterioration sensing time of the subpixel is reduced and the deterioration sensing value of each subpixel can be extracted through the interval for simultaneously sensing the deterioration of the three subpixels.

14 schematically shows a configuration of the controller 140 according to the present embodiments.

14, the controller 140 according to the present embodiment may include a sensing data voltage control unit 141, a sensing transistor control unit 142, and a sensing unit 143.

The sensing data voltage control unit 141 controls the sensing data voltage Vdatas to be applied to the first node N1 of the driving transistor DRT included in each subpixel in the sensing period.

The sensing data voltage control section 141 applies the sensing data voltage Vdatas only to the first node N1 of the driving transistor DRT included in any one of the subpixels in the same sensing period, The sensing data voltage Vdatas is applied to the first node N1 of the driving transistor DRT included in the driving transistor DRT.

That is, in the present embodiments, the deterioration of the reference sub-pixel is sensed during the first sensing time and the deterioration of the plurality of sub-pixels including the reference sub-pixel is sensed during the second sensing time, A sensing data voltage Vdatas is applied only to the subpixels and a sensing data voltage Vdatas is applied to a plurality of subpixels at the time of deterioration sensing of the plurality of subpixels.

The sensing transistor control unit 142 controls the scan signal to turn on the sensing transistor SENT when a sensing data voltage Vdatas is applied to the subpixel in a sensing period and a predetermined time elapses.

When the sensing data voltage Vdatas is applied as one subpixel, the sensing transistor control unit 142 turns on the sensing transistor SENT and outputs the sensing data voltage Vdatas when the first sensing time elapses. Is applied to the plurality of sub-pixels, the sensing transistor SENT is turned on when the second sensing time has elapsed.

That is, since the deterioration sensing of the reference subpixel performs a single sensing, it senses deterioration of the subpixel during the first sensing time. The degradation sensing of the sub pixels other than the reference sub pixel performs a plurality of sensing, so that the deterioration of the sub pixels is sensed during the second sensing time.

The sensing unit 143 senses the deterioration of the subpixel using the sensed value during the first sensing time and the sensed value during the second sensing time.

The sensing unit 143 senses deterioration of the reference subpixel from the sensed value during the first sensing time. That is, since deterioration of the reference subpixel performs sensing for a sufficient time, the sensing value obtained during the first sensing time is set as the deterioration sensing value of the reference subpixel.

The sensing unit 143 calculates a deterioration sensing value of a subpixel other than the reference subpixel using the difference between the sensed value and the deterioration sensing value of the reference subpixel during the second sensing time. That is, the portion corresponding to the sensing value of the reference subpixel is removed from the sensing value obtained by performing the plural sensing, and the deterioration sensing value of the subpixels other than the reference subpixel is calculated.

According to the embodiments, the single sensing is performed for a sufficient first sensing time to accurately sense the deterioration of the reference sub-pixel, and the plural sensing is performed during the second sensing time shorter than the first sensing time, So that the time can be reduced.

In addition, by calculating the sensing values of the sub-pixels other than the reference sub-pixel through the difference between the sensed value during the second sensing time and the sensed value during the first sensing time, the sensing time can be reduced while the accuracy of the sensing value can be maintained do.

15 shows a process of driving the organic light emitting diode display 100 according to the present embodiment.

Referring to FIG. 15, the OLED display 100 according to the present exemplary embodiment senses deterioration of a reference subpixel during a first sensing time (S1500).

Deterioration of the reference subpixel is performed with a single sensing and is sensed for a sufficient first sensing time.

The degradation sensing value of the reference subpixel is obtained and the deterioration of the plurality of subpixels including the reference subpixel is simultaneously sensed during the second sensing time (S1510).

Here, the sub-pixel to be simultaneously sensed with the reference sub-pixel may be a sub-pixel driven by the scan signal applied to the same gate line GL as the reference sub-pixel and connected to the same sensing line SL.

When the reference sub-pixel is K, the number of sub-pixels to be simultaneously sensed is (K + 1).

The deterioration sensing value of the subpixels other than the reference subpixel is calculated using the sensed value during the first sensing time and the sensed value during the second sensing time (S1520).

Therefore, according to the embodiments, the deterioration sensing for the reference subpixel is performed by a single sensing, the deterioration sensing for the subpixels other than the reference subpixel is performed by a plurality of sensing, and the overall time required for deterioration sensing of the subpixel .

In addition, the deterioration sensing value of sub pixels other than the reference sub pixel is extracted by using the difference between the sensing value of the single sensing and the sensing value of the plural sensing, so that the deterioration sensing time can be reduced while the accuracy of the deterioration sensing can be maintained.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. In addition, the embodiments disclosed in the present invention are not intended to limit the scope of the present invention but to limit the scope of the technical idea of the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: organic light emitting display device 110: organic light emitting display panel
120: gate driver 130: data driver
140: controller 141: sensing data voltage control unit
142: sensing transistor control unit 143: sensing unit

Claims (15)

An organic light emitting display panel;
N subpixels arranged in the organic light emitting display panel and driven by a scan signal applied to the same gate line and connected to the same sensing line; And
(K + 1) subpixels including the K reference subpixels during the second sensing time, respectively, during the first sensing time, and performs deterioration sensing for the K reference subpixels among the N subpixels during the first sensing time, And a sensing unit for sensing deterioration of the subpixels other than the reference subpixel using the sensing value obtained during the first sensing time and the sensing value obtained during the second sensing time,
And an organic light emitting diode (OLED).
The method according to claim 1,
The sensing unit includes:
(K + 1) times the value obtained by subtracting 1 / (K + 1) of the deterioration sensing value of the K reference sub-pixels from the sensing value obtained during the second sensing time, And the calculated value is used as the sensing value.
The method according to claim 1,
The sensing unit includes:
(K + 1) subpixels including the K reference subpixels after performing degradation sensing for the K reference subpixels, respectively.
The method according to claim 1,
Wherein the first sensing time for performing degradation sensing for the reference subpixel is longer than the second sensing time.
The method according to claim 1,
Wherein the second sensing time for simultaneously performing deterioration sensing for the (K + 1) sub-pixels is 1 / (K + 1) of the first sensing time.
The method according to claim 1,
Each of the N subpixels has,
A driving transistor connected to a data line and a first node arranged in the organic light emitting display panel; and a sensing transistor connected between a second node of the driving transistor and the sensing line,
The sensing unit includes:
The sensing data voltage is applied to the first node of the driving transistor included in one or more subpixels to be sensed in the sensing period, and when the predetermined time elapses, the sensing transistor is turned on to turn on the second And the voltage of the node is sensed.
Performing deterioration sensing for each of the K reference sub-pixels among the N sub-pixels during the first sensing time;
Simultaneously performing deterioration sensing for (K + 1) sub-pixels including the K reference sub-pixels during a second sensing time; And
Sensing deterioration of subpixels other than the reference subpixel using the sensing value obtained during the first sensing time and the sensing value obtained during the second sensing time
And a driving method of the organic light emitting display device.
8. The method of claim 7,
Wherein sensing the deterioration of sub-pixels other than the reference sub-
(K + 1) times the value obtained by subtracting 1 / (K + 1) of the deterioration sensing value of the K reference sub-pixels from the sensing value obtained during the second sensing time, Wherein the sensing value is calculated as a sensing value.
8. The method of claim 7,
Wherein the first sensing time for performing deterioration sensing for the reference subpixel is longer than the second sensing time.
8. The method of claim 7,
Wherein the second sensing time for simultaneously performing deterioration sensing for the (K + 1) sub-pixels is 1 / (K + 1) of the first sensing time.
8. The method of claim 7,
Wherein the N subpixels are subpixels driven by a scan signal applied to the same gate line and connected to the same sensing line.
A sensing data voltage control unit for sensing a sensing data voltage to be applied to a first node of a driving transistor included in one or more subpixels to be sensed in a sensing period;
The sensing transistor connected to the second node of the driving transistor is turned on after the first sensing time if the driving transistor to which the sensing data voltage is applied is turned on and if the driving transistor to which the sensing data voltage is applied is turned on A sensing transistor control unit for turning on the sensing transistor after a second sensing time; And
When the sensing transistor is turned on, it senses the voltage of the second node of the driving transistor and senses deterioration of the driving transistor using the sensed voltage value.
≪ / RTI >
13. The method of claim 12,
The sensing unit includes:
And a controller for sensing deterioration of the driving transistor by using a difference between a voltage value sensed after the first sensing time and a voltage value sensed after the second sensing time.
13. The method of claim 12,
Wherein the second sensing time is shorter than the first sensing time.
13. The method of claim 12,
When the sensing data voltage is simultaneously applied to the plurality of driving transistors, if the number of the driving transistors to which the sensing data voltage is applied is K, the voltage value obtained through sensing during the first sensing time is (K-1) controller.

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