KR20170023489A - Transparent conductive multi-thin layer film for display, and method thereof - Google Patents
Transparent conductive multi-thin layer film for display, and method thereof Download PDFInfo
- Publication number
- KR20170023489A KR20170023489A KR1020150118702A KR20150118702A KR20170023489A KR 20170023489 A KR20170023489 A KR 20170023489A KR 1020150118702 A KR1020150118702 A KR 1020150118702A KR 20150118702 A KR20150118702 A KR 20150118702A KR 20170023489 A KR20170023489 A KR 20170023489A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- refractive index
- sno
- present
- oxide
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Laminated Bodies (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
The present invention relates to a transparent multilayer thin film structure for a display, and more particularly, to a transparent multilayer thin film structure used as a transparent electrode of a flat panel display.
The transparent electrode is a material having electrical conductivity and transmitting light in the visible light region. In general, the specific resistance is 10 Ω · cm or less and that has a 3 over 80% of the value in the visible region (400nm ~ 800nm) bandgap (Band gap) the material the TCO (Transparent Conducting Oxide), which satisfies the condition more than 3.3eV do.
For use as a transparent electrode of a flat panel display, it is necessary to implement a fast switching and response speed and to have a low electrical resistivity as much as possible.
At present, ITO is widely used because it has the best optical and electrical characteristics. However, since indium (In) is a rare earth element, the price rises due to the limitation of the indium production amount, and toxicity causes an environmental problem.
In addition, since the development of a display is made by high-definition and large-sized display, a low-resistance transparent electrode is required. However, if the thickness is increased to lower the resistance, the material cost is increased and the light transmittance is decreased due to interference .
On the other hand, the SnO 2 thin film is an n-type semiconductor having a wide optical band gap of 3.5 eV or more and is transparent in the optical spectrum region and has high electric conductivity, As a potential substitute.
In a single thin film, transmittance, reflection, and refraction are observed in air, substrate, and thin film depending on refractive index difference, and light transmittance is determined. When light passes through the interface between two media with different refractive indices, some are reflected and travel in the opposite direction, and some pass through the medium. Reflected light generated by a medium having a low index of refraction is reflected by a medium having a high index of refraction. The reflected light generated by a medium having a high index of refraction comes into contact with a medium having a low index of refraction. No change occurs. In the multi-layer structure using this principle, the reflectance is reduced and the transparency is improved by the refractive index difference of each layer.
Disclosure of the Invention The present invention has been conceived in order to solve the above-mentioned problems, and it is an object of the present invention to provide a transparent multilayer thin film for display which has a low electrical property and a high optical property required for transparent electrodes by designing mediators having different refractive indexes, The purpose is to provide.
The objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, a transparent multilayer thin film for display comprises a first oxide thin film formed on a display substrate, a metal thin film formed on the first oxide thin film, A low refractive index thin film formed on the high refractive index thin film and being a thin film having a refractive index equal to or lower than the reference value and a second refractive index thin film formed on the low refractive index thin film and having a refractive index higher than the reference value, Oxide thin film.
The first oxide thin film may be SnO 2 , The metal thin film is silver (Ag), the high refractive index thin film is Nb 2 O 5 , the low refractive index thin film is SiO 2 , and the second oxide thin film is SnO 2 .
The thickness of the silver (Ag) thin film may be 10 nm or more.
The method for manufacturing a transparent multilayer thin film for display according to the present invention includes the steps of forming a first oxide thin film on a display substrate, forming a metal thin film on the first oxide thin film, Forming a low refractive index thin film having a refractive index equal to or lower than the reference value on the high refractive index thin film and forming a second oxide thin film having a refractive index higher than the reference value on the low refractive index thin film, .
The first oxide thin film may be SnO 2 , The metal thin film is silver (Ag), the high refractive index thin film is Nb 2 O 5 , the low refractive index thin film is SiO 2 , and the second oxide thin film is SnO 2 .
The thickness of the silver (Ag) thin film may be 10 nm or more.
According to the transparent multilayer thin film for display of the present invention, excellent optical properties and high electrical properties can be obtained without using ITO (Indium Tin Oxide).
In addition, the transparent multilayer thin film for display of the present invention can replace the conventional transparent electrode using ITO, which is advantageous in that it is more economical and eco-friendly.
In addition, the transparent multilayer thin film for display of the present invention is applicable to a flat panel display.
1 is a view showing a distribution of the refractive index of a multilayer transparent electrode having a multilayer structure.
2 is a cross-sectional view showing a laminated structure of a transparent multilayer thin film for display according to an embodiment of the present invention.
FIG. 3 is a graph showing the refractive indexes of SnO 2 , Nb 2 O 5 , SiO 2 and Ag according to an embodiment of the present invention.
4 is a graph showing extinction coefficients of SnO 2 , Nb 2 O 5 , SiO 2 and Ag according to an embodiment of the present invention.
5 and 6 are graphs simulating the EMP (Essential Macleod Program) with different thicknesses of SnO 2 , Nb 2 O 5 , SiO 2 and Ag according to an embodiment of the present invention.
7 is a photograph of the surface according to the thickness of silver according to an embodiment of the present invention.
8 is a graph showing AES depth profile profiles according to an embodiment of the present invention.
FIG. 9 is a graph showing the measured transmittance of SnO 2 / Ag / Nb 2 O 5 / SiO 2 / SnO 2 according to an embodiment of the present invention while varying the thickness of SnO 2 in the upper and lower layers.
10 is a graph illustrating surface resistance according to the thickness of SnO 2 according to an embodiment of the present invention.
11 is a flowchart illustrating a method of manufacturing a transparent multilayer thin film for display according to an embodiment of the present invention.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted in an ideal or overly formal sense unless expressly defined in the present application Do not.
In the following description of the present invention with reference to the accompanying drawings, the same components are denoted by the same reference numerals regardless of the reference numerals, and redundant explanations thereof will be omitted. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.
1 is a view showing a distribution of the refractive index of a multilayer transparent electrode having a multilayer structure.
In FIG. 1, the high refractive index
1, the refractive index of air n o, a refractive index ratio of the oxide n 1, n 3, assuming that the refractive index of the metal as n 2, a refractive index of each other the presence or absence of a phase change of the reflected light at the interface between different media, and this reflected light The reflectance decreases due to the interference of the transparent materials, and the transparency increases due to the superposition effect of the transparent lights. At this time, the reflectance and transparency are determined by the combination of the thickness and the refractive index of each thin film.
2 is a cross-sectional view showing a laminated structure of a transparent multilayer thin film for display according to an embodiment of the present invention.
In FIG. 2, the refractive index of SnO 2 having a high refractive index is 2.5, the refractive index of a Nb 2 O 5 material having a high refractive index is 1.8, and the refractive indices of SiO 2 and Ag having a low refractive index are 1.6 and 0.1, respectively.
In the present invention, oxide (SnO 2) / metal (Ag) / oxide (SnO 2) to set the structure of the primary top layer to the SnO 2 (high refractive index) / SiO 2 (low refractive index) / Nb 2 O 5 (high refractive index), SnO 2 / Ag / Nb 2 O 5 / SiO 2 / SnO 2 multilayer structure. In such a multi-layer structure, the reflectance decreases and the transmittance increases due to the refractive index difference of each layer.
Referring to FIG. 2, the transparent multilayer thin film for display of the present invention includes a first oxide
The first oxide
The metal
The high refractive index
The low refractive index
The second oxide
11 is a flowchart illustrating a method of manufacturing a transparent multilayer thin film for display according to an embodiment of the present invention.
Referring to FIG. 11, a first oxide
Then, the metal
Then, a high refractive index
Then, a low refractive index
Finally, a second oxide
FIG. 3 is a graph showing the refractive indexes of SnO 2 , Nb 2 O 5 , SiO 2 and Ag according to an embodiment of the present invention. FIG. 4 is a graph showing the refractive indices of SnO 2 , Nb 2 O 5 , SiO 2 , and Ag, respectively.
In the present invention, in order to set the thickness of each material having a multi-layer structure, it is measured by an Ellipsometer and is simulated through an EMP (Essential Macleod Program). The results are shown in FIGS. 5 and 6.
5 and 6 are graphs simulating the EMP (Essential Macleod Program) with different thicknesses of SnO 2 , Nb 2 O 5 , SiO 2 and Ag according to an embodiment of the present invention.
Referring to FIGS. 5 and 6, a SnO 2 (45 nm) / Ag (10 nm) / SnO 2 (45 nm) structure at a thickness of 100 nm has a transmittance of 80% at a wavelength of 550 nm. bare Nb 2 O 5 and bare SiO 2 showed a transmittance of 90% or more, but showed the best transmittance in SnO 2 / Ag / Nb 2 O 5 / SiO 2 / SnO 2 multi-layer structure.
That is, when the thicknesses of the upper layer and the lower layer were changed in the five-layered multi-layer structure, the transmittance of the EMP result was 91%, 93%, 89%, and 89% at the reference wavelength of 550 nm, respectively. Therefore, the most suitable thickness for a five-layer multi-layer structure is SnO 2 (45 nm) / Ag (45 nm) / Nb 2 O 5 (45 nm) / SiO 2 (45 nm) / SnO 2 (45 nm). As described above, when the upper layer is made of high refractive index / low refractive index / high refractive index material based on SnO 2 / Ag / SnO 2 structure, a high light transmittance can be expected.
7 is a photograph of the surface according to the thickness of silver according to an embodiment of the present invention.
Referring to FIG. 7, the metal in the multilayer transparent electrode determines the electrical conductivity. Al, Au, Cu, and Ag are mainly used as a metal layer. Ag is the most excellent metal with electrical conductivity. Since it has a lower refractive index than Au and Cu, which have excellent electrical conductivity, Can be efficiently induced.
Therefore, the Ag thin film is most suitable as the metal of the multilayer transparent electrode since the transparency is improved efficiently while having excellent electric conductivity.
The Ag layer is an island at a thickness of 10 nm or less and the Ag layer partially covers the surface and does not completely cover the surface but it can be confirmed that the surface layer is completely covered with Ag at 10 nm or thicker. If the Ag layer is not densely distributed, it is difficult to expect a good electrical property in the multi-layer structure, and therefore it can be confirmed that it is appropriate to realize the Ag layer with a thickness of 10 nm or more.
8 is a graph showing AES depth profile profiles according to an embodiment of the present invention.
Referring to FIG. 8, Sn peaks appear first in SnO 2 (45 nm) / Ag (10 nm) / Nb 2 O 5 (10 nm) / SiO 2 (10 nm) / SnO 2 (25 nm) multilayer films. Thereafter, a Si element peak appears, which shows a portion where some overlap with the Sn peak. This is considered to be due to elemental diffusion between layers because the thickness of the thin film is very thin. It is also confirmed that the diffusion between Nb and Ag is large. Oxygen is present in all layers and some diffusion of Sn is observed in the Ag layer, but the specific resistance of the metal is not greatly increased.
FIG. 9 is a graph showing the measured transmittance of SnO 2 / Ag / Nb 2 O 5 / SiO 2 / SnO 2 according to an embodiment of the present invention while varying the thickness of SnO 2 in the upper and lower layers.
Referring to FIG. 9, the optical characteristic test results show similar tendency to EMP simulation. SnO 2 (45 nm) / Ag (10 nm) / Nb 2 O 5 (10 nm) / SiO 2 (10 nm) / SnO 2 25 nm), the highest transmittance was 85%.
10 is a graph illustrating surface resistance according to the thickness of SnO 2 according to an embodiment of the present invention.
Referring to FIG. 10, all four specimens showed excellent sheet resistance, and 6.3 Ω / sq at a SnO 2 (45 nm) / Ag (10 nm) / Nb 2 O 5 (10 nm) / SiO 2 (10 nm) / SnO 2 (25 nm) Respectively. When a triple layer of SnO 2 (45 nm) / Ag (10 nm) / SnO 2 (45 nm) was fabricated, the sheet resistance of about 100? / Sq was exhibited. However, As shown in Fig.
While the present invention has been described with reference to several preferred embodiments, these embodiments are illustrative and not restrictive. It will be understood by those skilled in the art that various changes and modifications may be made therein without departing from the spirit of the invention and the scope of the appended claims.
110 First oxide
130 High refractive index
150 second oxide thin film
Claims (14)
A metal thin film formed on the first oxide thin film;
A high refractive index thin film formed on the metal thin film and being a thin film having a refractive index equal to or higher than a predetermined reference value;
A low refractive index thin film formed on the high refractive index thin film and being a thin film having a refractive index equal to or lower than the reference value; And
And a second oxide thin film formed on the low refractive index thin film and having a refractive index higher than or equal to the reference value.
The first oxide thin film may be SnO 2 And a transparent multilayer thin film for display.
Wherein the metal thin film is silver (Ag).
Wherein the high refractive index thin film is Nb 2 O 5 .
Wherein the low refractive index thin film is SiO 2 .
Wherein the second oxide thin film is SnO 2 .
Wherein the silver (Ag) thin film has a thickness of 10 nm or more.
Forming a metal thin film on the first oxide thin film;
Forming a high refractive index thin film having a refractive index higher than a predetermined reference value on the metal thin film;
Forming a low refractive index thin film having a refractive index equal to or lower than the reference value on the high refractive index thin film; And
And forming a second oxide thin film having a refractive index higher than the reference value on the low refractive index thin film.
The first oxide thin film may be SnO 2 Wherein the transparent multi-layer thin film for display comprises a transparent substrate.
Wherein the metal thin film is silver (Ag).
Wherein the high refractive index thin film is Nb 2 O 5 .
Wherein the low refractive index thin film is SiO 2 .
Wherein the second oxide thin film is SnO 2 .
Wherein the silver (Ag) thin film has a thickness of 10 nm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150118702A KR101759067B1 (en) | 2015-08-24 | 2015-08-24 | Transparent conductive multi-thin layer film for display, and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150118702A KR101759067B1 (en) | 2015-08-24 | 2015-08-24 | Transparent conductive multi-thin layer film for display, and method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170023489A true KR20170023489A (en) | 2017-03-06 |
| KR101759067B1 KR101759067B1 (en) | 2017-07-18 |
Family
ID=58399010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150118702A KR101759067B1 (en) | 2015-08-24 | 2015-08-24 | Transparent conductive multi-thin layer film for display, and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101759067B1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110079992A (en) | 2010-01-04 | 2011-07-12 | 삼성코닝정밀소재 주식회사 | Transparent conductive thin film and display filter containing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000351170A (en) * | 1999-06-10 | 2000-12-19 | Gunze Ltd | Transparent conductive laminate |
-
2015
- 2015-08-24 KR KR1020150118702A patent/KR101759067B1/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110079992A (en) | 2010-01-04 | 2011-07-12 | 삼성코닝정밀소재 주식회사 | Transparent conductive thin film and display filter containing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101759067B1 (en) | 2017-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5549216B2 (en) | Transparent conductive laminate, method for producing the same, and touch panel | |
| KR101380000B1 (en) | Conductive structure, touch panel and method for manufacturing the same | |
| CN202758338U (en) | Capacitive touch screen base on shadow elimination glass | |
| CN104246913A (en) | Conductive structure and method for manufacturing same | |
| JP4349794B2 (en) | Method for producing conductive transparent substrate with multilayer antireflection film | |
| KR20170008572A (en) | Conductive structure body, method for manufacturing thereof, touch panel comprising thereof and display device comprising thereof | |
| KR101504840B1 (en) | Conducting substrate and method for preparing the same | |
| US9652055B2 (en) | Layer stack for a touch panel and method for forming a layer stack | |
| JP4406237B2 (en) | A method for producing a transparent substrate with a multilayer film having conductivity. | |
| KR101759067B1 (en) | Transparent conductive multi-thin layer film for display, and method thereof | |
| KR101909934B1 (en) | Transparent composite oxide film for flexible display, and display apparatus including the same, and method thereof | |
| CN107430904B (en) | Conducting structures and electronic device including the conducting structures | |
| KR20110105048A (en) | Transparent conductive thin film, display filter and potovoltaic cell containing the same | |
| KR102032011B1 (en) | Conductive laminate and transparent electrode comprising thereof | |
| KR101715467B1 (en) | Transparent Conductive Film for Display Comprising Multi-thinlayer Structure, Display Having The Same Film and Manufacturing Method Thereof | |
| CN207458611U (en) | Transparent conducting film and touch screen | |
| CN107405875B (en) | Conducting structures and electronic device including the conducting structures | |
| CN105845203A (en) | Flexible copper grid base transparent conducting thin film | |
| KR20160098090A (en) | Conductive structure body and method for manufacturing the same | |
| TW201640290A (en) | Touch pannel and applications thereof | |
| KR101940757B1 (en) | Conductive structure body and method for manufacturing the same | |
| KR101689852B1 (en) | Multi-layered transparent electrode comprising grid pattern structure | |
| KR101521329B1 (en) | Sensor panel with anti-reflection layer | |
| CN106406645A (en) | Flexible copper mesh-based touch screen and preparation method thereof | |
| KR101543394B1 (en) | Transparent touch panel film for forming fine wire pattern, manufacturing method thereof, and touch panel including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |