KR20110079992A - Transparent conductive thin film and display filter containing the same - Google Patents

Transparent conductive thin film and display filter containing the same Download PDF

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KR20110079992A
KR20110079992A KR1020100000120A KR20100000120A KR20110079992A KR 20110079992 A KR20110079992 A KR 20110079992A KR 1020100000120 A KR1020100000120 A KR 1020100000120A KR 20100000120 A KR20100000120 A KR 20100000120A KR 20110079992 A KR20110079992 A KR 20110079992A
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film
thin film
transparent conductive
transparent
protective film
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KR1020100000120A
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KR101242102B1 (en
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조성님
김의수
신유민
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삼성코닝정밀소재 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/02—Noble metals
    • B32B2311/08—Silver
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/24—Aluminium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays

Abstract

PURPOSE: A transparent conductive film and a display filter having the same are provided to prevent coherence by the moisture since the metal thin film has crystalline and keep the superior appearance property since fault occurrence is low even in high temperature and humidity environment. CONSTITUTION: On the transparent substrate high-deflection transparent films (12a,12b), protective film and metal film are repeatedly laminated. The protective film includes an upper protective film(13b) and a lower protective film(13a). The lower protective film is formed in the lower part of the metal film. The thickness of the upper protective film is formed in the thick comparison of 1.5~3 times of the lower protective film. In the transparent conductive film, the multi-layer film structure, orderly consist of the first high-deflection transparent film, and the lower protective film, metal film, the upper protective film, the second high-deflection transparent layer, is repeatedly laminated.

Description

투명 도전막 및 그를 포함하는 디스플레이 필터{Transparent conductive thin film and display filter containing the same}Transparent conductive thin film and display filter containing the same

본 발명은 투명 도전막 및 그를 포함하는 디스플레이 필터에 관한 것으로, 특히 가시광선 투과율이 높고 근적외선 차폐성이 우수하며 내부 응력이 작아 고온 다습한 환경에서도 변형이 없는 투명 도전막 및 그를 포함하는 디스플레이 필터를 제공하는 것이다.The present invention relates to a transparent conductive film and a display filter including the same. In particular, the present invention provides a transparent conductive film having high visible light transmittance, excellent near-infrared shielding properties, and low internal stress, without deformation in a high temperature and high humidity environment, and a display filter including the same. It is.

투명 도전막은 통상적으로 산화물 투명박막과 금속박막이 반복 적층되는 다층 박막구조로, 플라즈마 디스플레이 패널의 전자파 차폐재, 자동차용 방풍 요리, 전자파 차폐 창유리, 디스플레이 디바이스의 투명 전극 등으로 널리 이용되고 있다. BACKGROUND ART A transparent conductive film is a multilayer thin film structure in which an oxide transparent thin film and a metal thin film are repeatedly laminated, and are widely used as electromagnetic wave shielding materials for plasma display panels, windshields for automobiles, electromagnetic shielding windows, and transparent electrodes for display devices.

투명 도전막은 점차 그 활용 범위가 확대되면서 가시광 영역에서의 높은 투과성과 높은 전기 전도성 외에 내습, 고온 등의 환경에서 결점이나 특성 저하가 발생하지 않는 고 내구성 특성이 요구되고 있다. As the transparent conductive film gradually expands its application range, it is required to have high durability characteristics that do not cause defects or deterioration in environments such as moisture resistance and high temperature, in addition to high permeability and high electrical conductivity in the visible light region.

그러나 투명 도전막이 저항값을 낮추기 위해 적층 수를 높일 경우 박막의 내부 응력(Stress) 증가로 도전막이 파단되어 저항값이 높아지고 습도가 높은 환경에서 은(Ag)의 응집 현상이 나타나 백색의 결점이 발생하는 문제가 있었다. However, when the transparent conductive film is increased in order to decrease the resistance value, the conductive film breaks due to the increase of internal stress of the thin film, resulting in the aggregation of silver (Ag) in the environment where the resistance value is high and the humidity is high, resulting in white defects. There was a problem.

본 발명은 상기와 같은 배경에서 제안된 것으로, 본 발명의 목적은 가시광선 투과율이 높고 근적외선 차폐성이 우수하며 내부 응력이 작아 고온 다습한 환경에서도 변형이 없는 투명 도전막 및 그를 포함하는 디스플레이 필터를 제공하는 것이다.The present invention has been proposed in the above-described background, and an object of the present invention is to provide a transparent conductive film without deformation even in a high temperature and high humidity environment and a display filter including the same, having high visible light transmittance, excellent near-infrared shielding properties, and low internal stress. It is.

상기와 같은 목적을 달성하기 위하여, 본 발명의 일 양상에 따른 투명 도전막은, 투명기판 위에 고굴절 투명박막과 보호박막과 금속박막이 반복 적층되되, 보호박막이 금속박막의 상단에 형성되는 상단 보호박막과 금속박막의 하단에 형성되는 하단 보호박막을 포함하는 투명 도전막으로서,In order to achieve the above object, in the transparent conductive film according to an aspect of the present invention, a high refractive index transparent film and a protective film and a metal thin film are repeatedly stacked on a transparent substrate, the upper protective film is a protective film formed on top of the metal thin film And a transparent conductive film comprising a lower protective film formed on the lower end of the metal thin film,

상단 보호박막은 그 두께가 하단 보호박막의 두께 대비 1.5배 이상, 3.0배 이하로 형성되는 것을 특징으로 한다.The upper protective thin film is characterized in that the thickness is formed by more than 1.5 times, 3.0 times less than the thickness of the lower protective film.

바람직하게는, 상단 보호박막과 하단 보호박막은, 각각의 두께가 고굴절 투명박막의 두께 대비 15% 이상, 65% 이하로 형성되는 것을 특징으로 한다.Preferably, the upper protective film and the lower protective film, characterized in that each of the thickness is formed by more than 15%, 65% or less than the thickness of the high refractive transparent thin film.

상기와 같이 구성된 본 발명에 따른 투명 도전막 및 그를 포함하는 디스플레이 필터는 상단 보호박막의 두께가 하단 보호박막의 두께 대비 1.5배 이상, 3.0배 이하로 형성됨으로써, 상단 보호박막과 하단 보호박막 사이에 형성되는 금속박막이 결정성을 띄게 되어 전기 전도성이 향상되고, 가시광선 투과율이 정상 범위(80% 이상)를 만족시키는 유용한 효과가 있다. 또한, 근적외선 차폐 성능이 우수한 효과가 있다. The transparent conductive film and the display filter including the same according to the present invention configured as described above are formed by the thickness of the upper protective film is 1.5 times or more, 3.0 times or less than the thickness of the lower protective film, between the upper protective film and the lower protective film. The metal thin film to be formed is crystalline to improve the electrical conductivity, there is a useful effect that the visible light transmittance satisfies the normal range (80% or more). In addition, there is an effect that the near-infrared shielding performance is excellent.

또한, 금속박막이 결정성을 띄게 되어 수분에 의한 응집을 막아줌으로써, 고온 다습한 환경에서도 결점 발생이 적어 우수한 외관 특성을 유지할 수 있고, 금속박막의 내구성, 특히 내습성을 향상시킬 수 있는 유용한 효과가 있다. In addition, the metal thin film becomes crystalline and prevents agglomeration by moisture, so that there are few defects even in a high temperature and high humidity environment, thereby maintaining excellent appearance characteristics, and improving the durability of the metal thin film, especially moisture resistance. There is.

또한, 금속박막이 결정성을 띄게 되어 박막의 적층수를 늘리지 않아도 전기 전도성이 우수하고, 적외선반사 금속박막의 응집력을 줄여 고온 다습한 환경에 노출되어도 내구성이 강한 유용한 효과가 있다.
In addition, the metal thin film becomes crystalline and excellent in electrical conductivity even without increasing the number of layers of the thin film, thereby reducing the cohesive force of the infrared reflective metal thin film, which has a useful effect of strong durability even when exposed to a high temperature and high humidity environment.

도 1 은 본 발명에 따른 투명 도전막을 설명하기 위한 예시도이고,
도 2 는 본 발명의 일 실시예에 따른 투명 도전막의 단면도이다.1 is an exemplary view for explaining a transparent conductive film according to the present invention,
2 is a cross-sectional view of a transparent conductive film according to an embodiment of the present invention.

이하, 첨부된 도면을 참조하여 전술한, 그리고 추가적인 양상을 기술되는 바람직한 실시예를 통하여 본 발명을 당업자가 용이하게 이해하고 재현할 수 있도록 상세히 설명하기로 한다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the present embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

도 1 은 본 발명에 따른 투명 도전막을 설명하기 위한 예시도이다.1 is an exemplary view for explaining a transparent conductive film according to the present invention.

도시한 바와 같이, 본 실시예에 따른 열선반사 다층박막(10)은 투명기판(11) 위에 제1 고굴절 투명박막(12a), 하단 보호박막(13a), 금속박막(14), 상단 보호박막(13b), 제2 고굴절 투명박막(12b) 순서대로 이루어진 다층 박막구조가 반복 적층된다. As shown, the heat ray reflection multilayer thin film 10 according to the present embodiment is the first high refractive index transparent film 12a, the lower protective film 13a, the metal thin film 14, the upper protective thin film on the transparent substrate 11 ( 13b), a multilayer thin film structure composed of the second high refractive transparent thin film 12b in this order is repeatedly stacked.

투명기판(11)은 광투과율이 우수하고 기계적 물성이 우수한 것이면 어느 것이든 제한되지 않는다. 예컨대, 투명기판(11)은 열경화 또는 UV 경화가 가능한 유기필름으로서 주로 폴리머 계열의 물질, 예컨대 폴리에틸렌 테레프탈레이트(PET), 아크릴(Acryl), 폴리카보네이트(PC), 우레탄 아크릴레이트(Urethane Acrylate), 폴리에스테르(Polyester), 에폭시 아크릴레이트(Epoxy Acrylate), 폴리염화비닐(PVC)로 구현될 수 있다. 또한, 투명기판(11)은 화학강화유리로 소다석회유리(Soda-lime Glass) 또는 알루미노실리케이트유리(SiO2-Al2O-Na2O)로 구현될 수 있으며, 이중 Na 및 Fe의 양은 용도에 따라 낮게 조정될 수 있다.The transparent substrate 11 is not limited as long as it has excellent light transmittance and excellent mechanical properties. For example, the transparent substrate 11 is an organic film capable of thermal curing or UV curing, mainly a polymer-based material such as polyethylene terephthalate (PET), acryl (Acryl), polycarbonate (PC), urethane acrylate (Urethane Acrylate) , Polyester (Polyester), epoxy acrylate (Epoxy Acrylate), polyvinyl chloride (PVC) can be implemented. In addition, the transparent substrate 11 may be formed of soda-lime glass or aluminosilicate glass (SiO 2 -Al 2 O-Na 2 O) as chemically strengthened glass, and the amount of Na and Fe is It can be adjusted low depending on the application.

제1, 제2 고굴절 투명박막(12a, 12b)은 2.2 이상의 굴절률을 갖으며, 압축응력이 0.1GPa 이상, 0.2GPa 이하인 금속 산화물로 구현될 수 있다. 일례로, 제1, 제2 고굴절 투명박막(12a, 12b)은 오산화 니오브(Nb2O5)로 구현될 수 있다. 또한, 일례로 제1, 제2 고굴절 투명박막(12a, 12b)의 두께는 24nm 이상, 38nm 이하로 구현된다.The first and second high refractive index transparent films 12a and 12b may have a refractive index of 2.2 or more and a compressive stress of 0.1 GPa or more and 0.2 GPa or less. For example, the first and second high refractive transparent thin films 12a and 12b may be formed of niobium pentoxide (Nb 2 O 5 ). In addition, as an example, the thicknesses of the first and second high refractive transparent thin films 12a and 12b may be implemented to be 24 nm or more and 38 nm or less.

하단 보호박막, 상단 보호박막(13a, 13b)은 금속박막(14)이 결정성을 띄도록 하며, 가시광선 영역의 광 투광율을 정상 범위 예컨대 80% 이상으로 유지시켜 주는 역할을 한다. 금속박막(14)의 결정성은 금속박막(14)을 감싸고 있는 하단 보호박막, 상단 보호박막(13a, 13b)의 결정성에 영향을 받는다. 특히 은(Ag)의 경우, 상단 보호박막(13b)의 결정성에 영향을 크게 받는다. 일례로 하단 보호박막, 상단 보호박막(13a, 13b)은 금속 산화물, 바람직하게는, 알루미늄(Al) 또는 타이타늄(Ti)이 총 질량대비 2wt% 이상, 10wt% 이하 도핑된 산화아연(ZnO)으로 구현될 수 있다. The lower protective thin film and the upper protective thin film 13a and 13b make the metal thin film 14 exhibit crystallinity, and serve to maintain the light transmittance of the visible light region in a normal range, for example, 80% or more. The crystallinity of the metal thin film 14 is affected by the crystallinity of the lower protective film and the upper protective thin films 13a and 13b surrounding the metal thin film 14. Particularly, in the case of silver (Ag), the crystallinity of the upper protective thin film 13b is greatly affected. For example, the lower protective thin film and the upper protective thin film 13a and 13b may be formed of zinc oxide (ZnO) doped with a metal oxide, preferably, aluminum (Al) or titanium (Ti) of 2 wt% or more and 10 wt% or less. Can be implemented.

가시광선 영역에서 흡수 특성이 없이 고굴절을 나타내는 오산화 니오브(Nb2O5)의 경우, 우수한 광학 특성을 나타내지만, 스퍼터로 100nm 이하 적층 시 비정질 특성을 나타내어 금속박막(14)의 결정성 향상에 악영향을 미친다. 이에 오산화 니오브(Nb2O5)만을 증착할 경우, 투명 도전막의 전기 전도성이 급격하게 저하된다. 반면, 금속박막(14)의 상단 보호박막(13b)으로 알루미늄(Al)이 도핑된 산화아연을 사용하는 경우, 상단 보호박막(13b)의 두께를 증가시키면 박막의 내구성이 향상되나 산화아연은 380nm~430nm 사이에서 광 흡수 특성을 가져 광투과율을 저하시킨다. 이에 금속박막(14)의 결정성에 미치는 영향이 상대적으로 크지 않은 하단 보호박막(13a)의 두께는 낮추고, 상단 보호박막(13b)의 두께는 은의 결정성을 높이는 동시에 가시광선 영역에서 광 투광율을 정상 범위 예컨대 80% 이상으로 유지시켜 주는 두께를 가지도록 구현되는 것이 바람직하다. Niobium pentoxide (Nb 2 O 5 ), which exhibits high refractive index without visible absorption in the visible region, exhibits excellent optical properties, but has an adverse effect on the crystallinity improvement of the metal thin film 14 due to its amorphous properties when laminated to 100 nm or less by sputtering. Crazy Accordingly, when only niobium pentoxide (Nb 2 O 5 ) is deposited, the electrical conductivity of the transparent conductive film decreases rapidly. On the other hand, when using zinc oxide doped with aluminum (Al) as the upper protective thin film 13b of the metal thin film 14, increasing the thickness of the upper protective thin film 13b improves the durability of the thin film, but zinc oxide is 380 nm. It has a light absorption characteristic between ˜430 nm to lower the light transmittance. Accordingly, the thickness of the lower protective film 13a, which has a relatively small influence on the crystallinity of the metal thin film 14, is lowered, and the thickness of the upper protective thin film 13b increases the crystallinity of silver and the light transmittance in the visible light region is normal. It is preferred to be implemented to have a thickness that is maintained in a range such as 80% or more.

일례로, 상단 보호박막(13b)은 그 두께가 하단 보호박막(13a)의 두께 대비 1.5배 이상, 3.0배 이하로 형성된다. 또한, 상단 보호박막(13b)과 하단 보호박막(13a)은, 각각의 두께가 제1 고굴절 투명박막 또는 제2 고굴절 투명박막(12a, 12b)의 두께 대비 15% 이상, 65% 이하로 형성된다. For example, the upper protective thin film 13b is formed to have a thickness of 1.5 times or more and 3.0 times or less than the thickness of the lower protective thin film 13a. In addition, the upper protective thin film 13b and the lower protective thin film 13a are each formed to have a thickness of 15% or more and 65% or less of the thickness of the first high refractive transparent film or the second high refractive transparent film 12a, 12b. .

하단 보호박막, 상단 보호박막(13a, 13b)은 제1, 제2 고굴절 투명박막(12a, 12b)의 압축응력을 감쇄시키는 역할 또는 강화 또는 곡면 처리를 위한 열처리 중에 산소가 제1, 제2 고굴절 투명박막(12a, 12b)을 통과하여 금속박막(14)으로 확산되는 것을 막아주는 역할을 한다. The lower protective thin film and the upper protective thin film 13a and 13b serve to attenuate the compressive stress of the first and second high refractive transparent thin films 12a and 12b, or the first and second high refractive indexes of oxygen during heat treatment for reinforcement or curved surface treatment. It passes through the transparent thin films 12a and 12b and prevents the diffusion into the metal thin film 14.

금속박막(14)은 가시광선 영역(380nm∼780nm)에서의 광 투과율이 높은 반면 적외선 영역에서의 광 반사율이 높은 물질로 구현된다. 일례로, 금속박막(14)은 은(Ag) 또는 은(Ag)을 주성분으로 하는 합금으로 형성될 수 있다. The metal thin film 14 is made of a material having high light transmittance in the visible light region (380 nm to 780 nm) while high light reflectance in the infrared region. For example, the metal thin film 14 may be formed of silver (Ag) or an alloy containing silver (Ag) as a main component.

도 2 는 본 발명의 일 실시예에 따른 투명 도전막의 단면도이다. 2 is a cross-sectional view of a transparent conductive film according to an embodiment of the present invention.

본 실시예에 따른 투명 도전막(20)은 소다석회유리(Soda-lime Glass)(21) 위에 오산화 니오브(Nb2O5)와 알루미늄이 도핑된 산화아연(AZO)과 은(Ag)과 알루미늄이 도핑된 산화아연(AZO)과 오산화 니오브(Nb2O5)가 반복적으로 적층된 다층 박막구조(22, 23, 24)로 구현된다. 각각의 다층 박막구조 22, 23, 24에서 은(Ag)은 알루미늄이 도핑된 산화아연(AZO) 사이에 형성된다.The transparent conductive film 20 according to the present embodiment includes zinc oxide (AZO), silver (Ag), and aluminum doped with niobium pentoxide (Nb 2 O 5 ) and aluminum on soda-lime glass 21. The doped zinc oxide (AZO) and niobium pentoxide (Nb 2 O 5 ) are repeatedly formed in a multilayer thin film structure (22, 23, 24). In each multilayer thin film structure 22, 23, 24, silver (Ag) is formed between aluminum oxide doped zinc oxide (AZO).

이하, 도2에 따른 알루미늄이 도핑된 산화아연(AZO)의 박막 두께에 따른 은(Ag)의 결정성, 광 투과율, 면저항(Ω/□), 내습성을 측정한 결과를 설명한다. Hereinafter, the results of measuring the crystallinity, light transmittance, sheet resistance (저항 / □), and moisture resistance of silver (Ag) according to the thickness of the thin film of aluminum oxide doped zinc oxide (AZO) according to FIG. 2 will be described.


산화아연(AZO) 박막 두께(nm)Zinc Oxide (AZO) Thin Film Thickness (nm) Ag 결정성
Ag crystallinity
광 투과율(%)% Light transmittance 면저항
(Ω／□)Sheet resistance
(Ω ／ □) 내습성
Moisture resistance
하단lower 상단Top 상단 두께 비Top thickness rain 평균Average 실시예1Example 1 55 1010 2.02.0 5.895.89 87.687.6 3.193.19 PassPass 실시예2Example 2 55 1515 3.03.0 5.015.01 87.787.7 3.223.22 PassPass 비교예1Comparative Example 1 55 55 1One 4.384.38 8585 3.313.31 PassPass 비교예2Comparative Example 2 1010 55 0.50.5 비정질Amorphous 85.985.9 3.393.39 failfail 비교예3Comparative Example 3 1515 55 0.30.3 비정질Amorphous 8686 3.493.49 failfail

여기서, 알루미늄이 도핑된 산화아연(TiZO)의 두께 비율은, 산화아연(TiZO)의 상단 박막 두께 ÷ 산화아연(TiZO)의 상단 박막 두께로 계산하였다. 또한, 은(Ag)의 결정성은 X선회절패턴(XRD) 측정을 통해 Ag Peak의 상대적인 세기를, 광 투과율은 Lambda-950 spectrophotometer를, 면저항(Ω/□)은 RSM-10 비접촉식 면저항 측정기를 사용하여 측정하였다. 내습성은 투명 도전막의 일정 면적, 예컨대 29.5cm×21cm 면적 당 백색 결점의 사이즈가 0.5mm 이하이고, 또한 사이즈가 0.5mm 이하인 백색 결점의 수가 5개 이하로 존재하는 경우 Pass, 백색 결점의 사이즈가 0.5mm 이상이고, 또한 사이즈가 0.5mm 이상인 백색 결점의 수가 5개 이상 생성 시 fail로 평가하였다. Here, the thickness ratio of zinc-doped zinc oxide (TiZO) was calculated as the top thin film thickness of zinc oxide (TiZO) ÷ top thin film thickness of zinc oxide (TiZO). In addition, the crystallinity of silver (Ag) is measured by X-ray diffraction pattern (XRD), the relative intensity of Ag Peak, the light transmittance is Lambda-950 spectrophotometer, and the sheet resistance (Ω / □) is RSM-10 non-contact sheet resistance meter. It was measured by. Moisture resistance is when the size of the white defect is 0.5 mm or less per predetermined area of the transparent conductive film, for example, 29.5 cm x 21 cm, and the number of white defects having a size of 0.5 mm or less is 5 or less. The number of white defects of 0.5 mm or more and a size of 0.5 mm or more was evaluated as fail when 5 or more were produced.

실시예 1, 2 및 비교예 1, 2, 3은 초음파를 이용해 세정한 두께 0.5㎜의 투명기판 위에, 오산화 니오브(Nb2O5) 타겟에 아르곤(Ar) 가스와 산소(O2) 가스를 혼합하여 도입하고 5 mTorr의 압력으로 전력밀도 2W/㎠ 또는 6W/㎠로 DC 스퍼터를 실시하여, 각각 두께 33㎚, 33nm, 33nm, 29nm, 25nm의 오산화 니오브(Nb2O5) 박막을 형성하였다.Examples 1, 2 and Comparative Examples 1, 2, and 3 use argon (Ar) gas and oxygen (O 2 ) gas to a niobium pentoxide (Nb 2 O 5 ) target on a 0.5 mm thick transparent substrate cleaned with ultrasonic waves. DC sputtering was performed at a power density of 2 W / cm 2 or 6 W / cm 2 at a pressure of 5 mTorr to form niobium pentoxide (Nb 2 O 5 ) thin films having a thickness of 33 nm, 33 nm, 33 nm, 29 nm, and 25 nm, respectively. .

또한, 실시예 1, 2 및 비교예 1, 2, 3은 오산화 니오브(Nb2O5) 박막 위에, 알루미늄이 2% 도핑된 산화아연(AZO) 타겟에 아르곤(Ar) 가스와 산소(O2) 가스를 혼합하여 도입하고 5 mTorr의 압력으로 전력밀도 2W/㎠로 DC 스퍼터를 실시하여, 각각 두께 5㎚, 15㎚, 5㎚, 10㎚, 15㎚의 알루미늄이 도핑된 하단 산화아연(AZO) 박막을 형성하였다. In addition, Examples 1, 2 and Comparative Examples 1, 2, and 3 are argon (Ar) gas and oxygen (O 2 ) on a zinc oxide (AZO) target doped with 2% aluminum on a niobium pentoxide (Nb 2 O 5 ) thin film. ) Gas was mixed and introduced, and a DC sputter was performed at a power density of 2 W / cm 2 at a pressure of 5 mTorr, and the lower zinc oxide (AZO) doped with aluminum having a thickness of 5 nm, 15 nm, 5 nm, 10 nm, and 15 nm, respectively. ) To form a thin film.

또한, 실시예 1, 2 및 비교예 1, 2, 3은 알루미늄이 도핑된 산화아연(AZO) 박막을 올린 층 위에, 은(Ag) 금속 타겟에 아르곤(Ar) 가스를 도입하고 5 mTorr의 압력으로 전력밀도 0.4W/㎠ 또는 1W/㎠의 DC 스퍼터를 실시하여, 각각 두께 17㎚의 은(Ag) 금속박막을 형성하였다. In addition, Examples 1, 2 and Comparative Examples 1, 2, and 3 introduced argon (Ar) gas into a silver (Ag) metal target on a layer on which an aluminum-doped zinc oxide (AZO) thin film was loaded, and a pressure of 5 mTorr. DC sputtering with a power density of 0.4 W / cm 2 or 1 W / cm 2 was performed to form a silver (Ag) metal thin film having a thickness of 17 nm, respectively.

또한, 실시예 1, 2 및 비교예 1, 2, 3은 은(Ag) 금속박막 위에, 다시 알루미늄 금속이 2% 도핑된 산화아연(AZO) 타겟에 아르곤(Ar) 가스와 산소(O2) 가스를 혼합하여 도입하고 5 mTorr의 압력으로 전력밀도 2W/㎠의 동일조건으로 DC 스퍼터를 실시하여, 각각 두께 10㎚, 15㎚, 5㎚, 5㎚, 5㎚의 알루미늄이 도핑된 상단 산화아연(AZO) 박막을 형성하였다. In addition, Examples 1, 2 and Comparative Examples 1, 2, and 3 are argon (Ar) gas and oxygen (O 2 ) on a silver (Ag) metal thin film and again to a zinc oxide (AZO) target doped with 2% aluminum metal. The gas was mixed and introduced, and DC sputtering was performed under the same conditions of power density 2W / cm 2 at a pressure of 5 mTorr, and top zinc oxide doped with aluminum having a thickness of 10 nm, 15 nm, 5 nm, 5 nm, and 5 nm, respectively. A thin film (AZO) was formed.

실시예 1, 2 및 비교예 1, 2, 3은 상단 산화아연(AZO) 박막 위에, 오산화 니오브(Nb2O5) 타겟에 아르곤(Ar) 가스와 산소(O2) 가스를 혼합하여 도입하고 5 mTorr의 압력으로 전력밀도 2W/㎠ 또는 6W/㎠로 DC 스퍼터를 실시하여, 각각 두께 29㎚, 25nm, 33nm, 33nm, 33nm의 오산화 니오브(Nb2O5) 박막을 형성하였다.Examples 1, 2 and Comparative Examples 1, 2, and 3 are introduced by mixing argon (Ar) gas and oxygen (O 2 ) gas on a top of a top zinc oxide (AZO) thin film to a niobium pentoxide (Nb 2 O 5 ) target. DC sputtering was performed at a power density of 2 W / cm 2 or 6 W / cm 2 at a pressure of 5 mTorr to form niobium pentoxide (Nb 2 O 5 ) thin films having a thickness of 29 nm, 25 nm, 33 nm, 33 nm, and 33 nm, respectively.

비교예 1과 같이, 알루미늄이 도핑된 하단 산화아연(AZO)과 상단 산화아연(AZO) 박막 두께 비가 1:1인 대칭구조의 투명 도전막에서는 은(Ag) 금속박막이 결정성을 띄며, 80% 이상의 광 투과율과 3.31의 면저항(Ω/□) 및 내습성이 우수하였다. 반면에, 비교예 2, 3과 같이 알루미늄이 도핑된 하단 산화아연(AZO)의 두께를 증가시킨 경우, 은(Ag) 금속박막이 결정성이 없는 비정질 박막이 되고 면저항(Ω/□)이 비교예 1 보다 상대적으로 높아져, 고온다습 환경에 노출되었을 때 은(Ag) 결집에 의한 백색 결점이 발생하는 문제가 발생하였다. As in Comparative Example 1, the silver (Ag) metal thin film shows crystallinity in the symmetrical transparent conductive film having a 1: 1 thickness ratio of the aluminum zinc-doped lower zinc oxide (AZO) and the upper zinc oxide (AZO) thin film. It was excellent in light transmittance of more than%, sheet resistance of 3.31 and moisture resistance. On the other hand, when the thickness of the lower zinc oxide (AZO) doped with aluminum is increased as in Comparative Examples 2 and 3, the silver (Ag) metal thin film becomes an amorphous thin film without crystallinity and the sheet resistance (Ω / □) is compared. It became relatively higher than Example 1, and the problem which generate | occur | produced the white defect by silver (Ag) aggregation when it exposed to high temperature and high humidity environment arises.

한편, 실시예 1, 2는 비교예 1과 같은 1:1인 대칭구조에서 알루미늄이 도핑된 상단 산화아연(AZO)의 두께를 증가시킨 경우, 은(Ag) 금속박막의 결정성이 증가하며 면저항(Ω/□)이 낮아지고, 광 투과율도 비교예 1 보다 상대적으로 높아지고, 내습 특성도 우수한 것을 확인할 수 있었다. Meanwhile, in Examples 1 and 2, when the thickness of the aluminum-doped top zinc oxide (AZO) was increased in the 1: 1 symmetric structure as in Comparative Example 1, the crystallinity of the silver (Ag) metal thin film was increased and the sheet resistance was increased. It was confirmed that (Ω / □) is low, the light transmittance is relatively higher than that of Comparative Example 1, and the moisture resistance is also excellent.

지금까지, 본 명세서에는 본 발명이 속하는 기술 분야에서 통상의 지식을 지닌 자가 본 발명을 용이하게 이해하고 재현할 수 있도록 도면에 도시한 실시예들을 참고로 설명되었으나 이는 예시적인 것에 불과하며, 당해 기술분야에 통상의 지식을 지닌 자라면 본 발명의 실시예들로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 이에 따라서 본 발명의 진정한 기술적 보호범위는 첨부된 특허청구범위에 의해서만 정해져야 할 것이다.Thus far, the present specification has been described with reference to the embodiments shown in the drawings so that those skilled in the art to which the present invention pertains can easily understand and reproduce the present invention. Those skilled in the art will understand that various modifications and equivalent other embodiments are possible from the embodiments of the present invention. Accordingly, the true technical protection scope of the present invention should be defined only by the appended claims.

10, 20: 투명 도전막
11, 21: 투명기판
12a: 제1 고굴절 투명박막 12b: 제2 고굴절 투명박막
13a: 하단 보호박막 13b: 상단 보호박막
14: 금속박막10, 20: transparent conductive film
11, 21: transparent substrate
12a: first high refractive transparent thin film 12b: second high refractive transparent thin film
13a: lower protective film 13b: upper protective film
14: metal thin film

Claims (9)

투명기판 위에 고굴절 투명박막과 보호박막과 금속박막이 반복 적층되되, 상기 보호박막이 상기 금속박막의 상단에 형성되는 상단 보호박막과 상기 금속박막의 하단에 형성되는 하단 보호박막을 포함하는 투명 도전막으로서,
상기 상단 보호박막은 그 두께가 상기 하단 보호박막의 두께 대비 1.5배 이상, 3.0배 이하로 형성되는 것을 특징으로 하는 투명 도전막.A transparent conductive film including a high refractive index transparent film, a protective thin film, and a metal thin film repeatedly stacked on a transparent substrate, wherein the protective thin film is formed on top of the metal thin film and a lower protective thin film formed on the bottom of the metal thin film. As
The upper protective thin film is a transparent conductive film, characterized in that the thickness is formed to 1.5 times or more, 3.0 times or less than the thickness of the lower protective film. 제 1 항에 있어서,
상기 투명 도전막은,
제1 고굴절 투명박막, 하단 보호박막, 금속박막, 상단 보호박막, 제2 고굴절 투명박막 순서대로 이루어진 다층 박막구조가 반복 적층된 것을 특징으로 하는 투명 도전막.The method of claim 1,
The transparent conductive film,
A transparent conductive film, characterized in that a multi-layered thin film structure consisting of a first high refractive index transparent film, a lower protective film, a metal thin film, an upper protective thin film, and a second high refractive index transparent thin film in order. 제 1 항에 있어서,
상기 상단 보호박막과 하단 보호박막은,
각각의 두께가 상기 고굴절 투명박막의 두께 대비 15% 이상, 65% 이하로 형성되는 것을 특징으로 하는 투명 도전막.The method of claim 1,
The upper protective film and the lower protective film,
Each thickness is 15% or more, 65% or less of the thickness of the high refractive transparent thin film, characterized in that the transparent conductive film. 제 1 항에 있어서,
상기 고굴절 투명박막은 2.2 이상의 굴절률을 갖는 금속 산화물로 형성되는 것을 특징으로 하는 투명 도전막.The method of claim 1,
The high refractive transparent thin film is a transparent conductive film, characterized in that formed of a metal oxide having a refractive index of 2.2 or more. 제 1 항에 있어서,
상기 고굴절 투명박막은,
오산화 니오브(Nb2O5)로 형성되는 것을 특징으로 하는 투명 도전막.The method of claim 1,
The high refractive transparent thin film,
A transparent conductive film formed of niobium pentoxide (Nb 2 O 5 ). 제 1 항에 있어서,
상기 보호박막은,
알루미늄(Al) 또는 타이타늄(Ti)이 도핑된 산화아연(ZnO)으로 형성되는 것을 특징으로 하는 투명 도전막.The method of claim 1,
The protective film,
A transparent conductive film formed of zinc oxide (ZnO) doped with aluminum (Al) or titanium (Ti). 제 6 항에 있어서,
상기 보호박막은,
알루미늄(Al) 또는 타이타늄(Ti)이 총 질량대비 2wt% 이상, 10wt% 이하 도핑된 것을 특징으로 하는 투명 도전막.The method according to claim 6,
The protective film,
Aluminum (Al) or titanium (Ti) is a transparent conductive film, characterized in that the doped 2wt% or more, 10wt% or less relative to the total mass. 제 1 항에 있어서,
상기 금속박막은,
은(Ag) 또는 은(Ag)을 주성분으로 하는 합금으로 형성되는 것을 특징으로 하는 투명 도전막.The method of claim 1,
The metal thin film,
A transparent conductive film formed of an alloy containing silver (Ag) or silver (Ag) as a main component. 청구항 1 내지 청구항 8 중 적어도 어느 한 항에 기재된 투명 도전막을 포함하는 것을 특징으로 하는 디스플레이 필터.A display filter comprising the transparent conductive film according to any one of claims 1 to 8.
KR1020100000120A 2010-01-04 2010-01-04 Transparent conductive thin film and display filter containing the same KR101242102B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104640697A (en) * 2012-07-02 2015-05-20 卡尔斯特里姆保健公司 Transparent conductive film
KR20170023489A (en) 2015-08-24 2017-03-06 충북대학교 산학협력단 Transparent conductive multi-thin layer film for display, and method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100962924B1 (en) * 2006-07-14 2010-06-10 삼성코닝정밀소재 주식회사 Coating Layer for Blocking EMI, Optical Filter Including the Same and Display Apparatus Including the Same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104640697A (en) * 2012-07-02 2015-05-20 卡尔斯特里姆保健公司 Transparent conductive film
KR20170023489A (en) 2015-08-24 2017-03-06 충북대학교 산학협력단 Transparent conductive multi-thin layer film for display, and method thereof

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