KR20160121836A - Light emitting device and lighting system - Google Patents

Abstract

An embodiment of the present invention relates to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting system. According to the embodiment, the light emitting device comprises: a first conductive semiconductor layer (112); a second conductive semiconductor layer (116) disposed under the first conductive semiconductor layer (112); an active layer (114) disposed between the first conductive semiconductor layer (112) and the second conductive semiconductor layer (116); a plurality of holes (H) exposing a portion of the first conductive semiconductor layer (112) by passing through the second conductive semiconductor layer (116) and the active layer (114) from a lower surface of the second conductive semiconductor layer (116); a first contact electrode (160) electrically connected to the first conductive semiconductor layer (112) through the plurality of holes (H) from the lower surface of the second conductive semiconductor layer (116); a first current diffusing layer (122) extending to a lateral surface of the first contact electrode (160); a first electrode layer (150) electrically connected to the first contact electrode (160); and a second contact electrode (132) electrically connected to the second conductive semiconductor layer (116).

Description

[0001] LIGHT EMITTING DEVICE AND LIGHTING SYSTEM [0002]

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

Light Emitting Diode (LED) is a pn junction diode whose electrical energy is converted into light energy. It can be made of compound semiconductors such as Group III and Group V on the periodic table. By controlling the composition ratio of compound semiconductors, It is possible.

When a forward voltage is applied to the light emitting device, electrons in the n-layer and holes in the p-layer are coupled to emit energy corresponding to the band gap energy of the conduction band and the valance band. Is mainly emitted in the form of heat or light, and when emitted in the form of light, becomes a light emitting element.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.

There is a lateral type light emitting device in which an electrode layer is arranged in one direction of an epilayer in a light emitting device according to the prior art. Such a horizontal type light emitting device has a problem that the operating voltage VF ) Is increased, the current efficiency is lowered, and there is a problem that it is vulnerable to electrostatic discharge.

In order to solve such a problem, a conventional via hole type vertical light emitting device in which a via hole is formed under the epi layer and an electrode is disposed has been developed.

In order to manufacture such a via-hole type vertical light emitting device, a plurality of mesa etching processes are performed for an n-contact, passivation is performed between an n-contact and a mesa etching hole, Electrons injected through the via holes are electron clouding phenomenon around the via hole which is the n-type pad electrode region, and electrons flow mainly around the via hole, Carrier recombination occurs only in a part of the active layer region around the light emitting layer, and light emission mainly occurs in the vicinity of the via hole.

Further, according to the related art, there is a problem that the VF increases depending on the n-contact region while a plurality of mesa etching processes for n-contact are performed in order to fabricate a via hole type vertical light emitting device.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system having improved light flux by improving carrier injection efficiency.

Also, the embodiments are directed to a light emitting device having improved electrical characteristics, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

The light emitting device according to the embodiment includes a first conductive semiconductor layer 112; A second conductive semiconductor layer (116) disposed under the first conductive semiconductor layer (112); An active layer 114 disposed between the first conductive semiconductor layer 112 and the second conductive semiconductor layer 116; The second conductivity type semiconductor layer 116 and the second conductivity type semiconductor layer 116. The second conductivity type semiconductor layer 116 may include a plurality of holes (H); A first contact electrode 160 electrically connected to the first conductivity type semiconductor layer 112 from the bottom surface of the second conductivity type semiconductor layer 116 through the plurality of holes H; An insulating layer 140 disposed between the first contact electrode 160 and the plurality of holes H; A first current diffusion layer 122 extending from the side surface of the first contact electrode 160; A first electrode layer 150 electrically connected to the first contact electrode 160; And a second contact electrode 132 electrically connected to the second conductive type semiconductor layer 116.

Further, the illumination system according to the embodiment may include a light emitting unit having the light emitting element.

According to the embodiment, it is possible to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system in which a carrier injection efficiency is improved by current diffusion to improve a light flux.

In addition, according to embodiments, a light emitting device having improved electrical characteristics, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system can be provided.

1 is a planar projection view of a light emitting device according to an embodiment.
2 is a partially enlarged cross-sectional view of a light emitting device according to the first embodiment;
3 is a partially enlarged cross-sectional view of a light emitting device according to a second embodiment.
4 to 16 are process sectional views of a method of manufacturing a light emitting device according to an embodiment.
17 is a sectional view of a light emitting device package according to an embodiment.
18 is an exploded perspective view of a lighting apparatus according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

(Example)

FIG. 1 is a plan view of a light emitting device 100 according to an embodiment. FIG. 2 is a partially enlarged cross-sectional view taken along line A-A 'of FIG. 1 as a first embodiment.

The light emitting device 100 according to the embodiment includes the first conductive semiconductor layer 112, the second conductive semiconductor layer 116, the active layer 114, the first contact electrode 160, the insulating layer 140, 1 current diffusion layer 122, a first electrode layer 150, and a second contact electrode 132.

For example, the light emitting device according to the embodiment includes a first conductive semiconductor layer 112; A second conductive semiconductor layer (116) disposed under the first conductive semiconductor layer (112); An active layer 114 disposed between the first conductive semiconductor layer 112 and the second conductive semiconductor layer 116; The second conductivity type semiconductor layer 116 and the second conductivity type semiconductor layer 116. The second conductivity type semiconductor layer 116 may include a plurality of holes (H); A first contact electrode 160 electrically connected to the first conductivity type semiconductor layer 112 through the plurality of holes H (see FIG. 4) from the bottom surface of the second conductivity type semiconductor layer 116, An insulating layer 140 disposed between the first contact electrode 160 and the plurality of holes H, a first current diffusion layer 122 extending from a side surface of the first contact electrode 160, A first electrode layer 150 electrically connected to the first contact electrode 160 and a second contact electrode 132 electrically connected to the second conductive semiconductor layer 116.

In an embodiment, the first current diffusion layer 122 may extend to both sides of the first contact electrode 160.

The first current diffusion layer 122 may be an oxide, a nitride, an amorphous, or the like. For example, the first current diffusion layer 122 may be SiO ₂ , Si ₃ N ₄ , an amorphous semiconductor layer, or the like, but is not limited thereto.

In the prior art, electrons injected through the contact electrode formed in the via hole generate electron densification in the contact electrode region, and thus light recombination occurs only in a part of the active layer region around the via hole, resulting in low luminous flux.

According to the embodiment, the current injection is diffused to the side of the first contact electrode 160 by the first current diffusion layer 122 extending to the side of the first contact electrode 160, The current concentration around the electrode 160 is prevented and the current diffusion efficiency is improved, so that the light output can be improved.

In an embodiment, the first current diffusion layer 122 may be disposed on one side or both sides of the first contact electrode 160.

In an embodiment, the first current diffusion layer 122 may be disposed at the same height as the first contact electrode 160, but the present invention is not limited thereto.

The channel layer 120 may be formed on the plurality of holes H and may not be formed in a region where the first contact electrode 160 is to be formed, A part of the conductive semiconductor layer 112 may be exposed.

The channel layer 120 functions as an electrical insulating layer between the first contact electrode 160, the active layer 114, and the second conductive semiconductor layer 116, which will be formed later.

In an embodiment, the first current diffusion layer 122 may be formed in a region overlapping with the channel layer 120. Accordingly, the light emitting efficiency can be improved by current diffusion without reducing the light emitting area by utilizing the region of the channel layer 120 where light emission does not substantially occur as a current diffusion path.

The embodiment may include a protrusion 160p extending to the first conductive type semiconductor layer 112. [

The upper surface of the protrusion 160p of the first contact electrode may be disposed higher than the upper surface of the insulating layer 140. [

Accordingly, the first contact electrode 160 also contacts the first conductivity type semiconductor layer 112 in the protrusion 160p, thereby increasing the contact area, thereby reducing the contact resistance and improving the electrical characteristics.

Fig. 3 is a partially enlarged cross-sectional view taken along line A-A 'in Fig. 1 as a second embodiment.

The second embodiment can employ the features of the first embodiment.

According to the second embodiment, a second current diffusion layer 123 disposed on the first conductive semiconductor layer 112 on the upper side of the first contact electrode 160 may be included. For example, the second current diffusion layer 123 may be disposed in the first conductive semiconductor layer 112, but the present invention is not limited thereto.

The horizontal width of the second current diffusion layer 123 may correspond to the horizontal width of the first contact electrode 160. For example, the horizontal width of the second current diffusion layer 123 may be equal to or greater than the horizontal width of the first contact electrode 160 so that the horizontal width of the second current diffusion layer 123 may be greater than that of the first conductivity type semiconductor layer 112 The current spreading efficiency is improved horizontally and the light output can be further improved.

The second current diffusion layer 123 may be thicker than the first current diffusion layer 122. Accordingly, current supplied from the first contact electrode 160 can be diffused in the horizontal direction without passing through the second current diffusion layer 123.

The second current diffusion layer 123 may be a nitride, an oxide, an amorphous material, or the like. For example, the second current diffusion layer 123 may be formed of Si ₃ N ₄ , SiO ₂ , an amorphous semiconductor layer, or the like, and may be formed as a single layer or multiple layers, but is not limited thereto.

The first conductive semiconductor layer 112 may include a second current diffusion layer 123 disposed on the first conductive semiconductor layer 112 on the first contact electrode 160 so that the carrier is electrically connected to the first conductive semiconductor layer 112 The current spreading efficiency is improved horizontally and the light output can be further improved.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 4 to 16, and the features of the present invention will be described in detail. Meanwhile, the following manufacturing process diagram will be described with reference to Fig. 2, but the manufacturing method of the embodiment is not limited thereto.

First, as shown in FIG. 4, a light emitting structure layer 110 may be formed on a growth substrate 105. The light emitting structure layer 110 may include a first conductive semiconductor layer 112, an active layer 114, and a second conductive semiconductor layer 116.

The growth substrate 105 may be loaded into the growth equipment, and formed thereon in the form of a layer or a pattern using a compound semiconductor of group II to VI elements.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor deposition, etc. may be employed and are not limited to such equipment.

The growth substrate 105 may be a conductive substrate, an insulating substrate, or the like. For example, the growth substrate 105 may be selected from the group consisting of a sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , and GaAs.

A buffer layer (not shown) may be formed on the growth substrate 105. The buffer layer reduces the difference in lattice constant between the growth substrate 105 and the nitride semiconductor layer. The material of the buffer layer may be GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP ≪ / RTI >

An undoped semiconductor layer (not shown) may be formed on the buffer layer. The undoped semiconductor layer may be formed of a GaN-based semiconductor that is not doped, and may be formed of a semiconductor layer that is lower in conductivity than the n- .

The first conductive semiconductor layer 112 may be formed on the buffer layer or the un-acted semiconductor layer. The active layer 114 may be formed on the first conductive semiconductor layer 112 and the second conductive semiconductor layer 116 may be sequentially stacked on the active layer 114.

Other layers may be further disposed on or under the respective semiconductor layers. For example, the semiconductor layer may be formed in a superlattice structure using a Group III-V compound semiconductor layer, but the present invention is not limited thereto.

The first conductive semiconductor layer 112 may be a compound semiconductor of a group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. For example, the first conductivity type semiconductor layer 112 may be a semiconductor having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + Layer.

The first conductive semiconductor layer 112 may be an n-type semiconductor layer, and the first conductive dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te.

The first conductive semiconductor layer 112 may be formed as a single layer or a multilayer and may alternate between two layers of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, Lt; RTI ID = 0.0 > lattice < / RTI >

For example, according to the embodiment, the first current diffusion layer 122 may be formed in the first conductive semiconductor layer 112. The first current diffusion layers 122 may be spaced apart from one another.

The first current diffusion layer 122 may be an oxide, a nitride, an amorphous, or the like. For example, the first current diffusion layer 122 may be SiO ₂ , Si ₃ N ₄ , an amorphous semiconductor layer, or the like, but is not limited thereto.

For example, after the first conductive semiconductor layer 112 is formed first, the first current diffusion layer 122 may be formed, and then the first conductive semiconductor layer 112 may be formed secondarily.

According to the embodiment, the first current diffusion layer 122 is formed so as to extend to the side of the first contact electrode 160 to be formed later, and the current injection is diffused to the side of the first contact electrode 160, The current concentration around the one contact electrode 160 is prevented and the current diffusion efficiency is improved, so that the light output can be improved.

The active layer 114 may include a single quantum well structure, a multiple quantum well structure, a quantum wire structure, or a quantum dot structure. The active layer 114 may be formed with a period of a well layer and a barrier layer using a compound semiconductor material of group III-V elements. The well layer comprises a semiconductor layer having a compositional formula of _{In x Al y Ga 1-xy} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and wherein the barrier layer is In _x And a semiconductor layer having a composition formula of Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? X + y? 1) The barrier layer may be formed of a material having a band gap higher than the band gap of the well layer.

 The active layer 114 may include at least one period of, for example, the period of the InGaN well layer / GaN barrier layer, the period of the InGaN well layer / AlGaN barrier layer, and the period of the InGaN well layer / InGaN barrier layer .

The second conductivity type semiconductor layer 116 is formed on the active layer 114 and the second conductivity type semiconductor layer 116 is a compound semiconductor of a group III-V element doped with the second conductivity type dopant, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. The second conductive semiconductor layer 116 is formed of a semiconductor layer having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? .

The second conductive semiconductor layer 116 may be a p-type semiconductor layer, and the second conductive dopant may include a p-type dopant such as Mg, Zn, Ca, Sr, and Ba. The second conductive semiconductor layer 116 may be formed as a single layer or a multilayer, but is not limited thereto.

The second conductive semiconductor layer 116 may include a superlattice structure in which two different layers of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP are alternately arranged .

The first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116 may be defined as a light emitting structure layer 110. A third conductive semiconductor layer (not shown), for example, a semiconductor layer having a polarity opposite to that of the second conductive type may be formed on the second conductive semiconductor layer 116.

Accordingly, the light emitting structure layer 110 may include at least one of an np junction, a pn junction, an npn junction, and a pnp junction structure. In the following description, the structure in which the second conductivity type semiconductor layer 116 is disposed on the uppermost layer of the light emitting structure layer 110 will be described as an example.

Next, an etching process for removing a part of the light emitting structure may be performed.

For example, a plurality of holes H may be formed through the second conductive semiconductor layer 116 and the active layer 114 to expose a portion of the first conductive semiconductor layer 112.

According to the embodiment, the first conductivity type semiconductor layer 112 between the first current diffusion layers 122 can be partially removed.

The plurality of holes H may be formed at a predetermined angle from the first conductivity type semiconductor layer 112 to the top surface of the second conductivity type semiconductor layer 116, But is not limited to, an obtuse angle.

In the embodiment, the horizontal width of the plurality of holes H may be reduced toward the lower side. 2, the horizontal widths of the plurality of holes H may decrease toward the upper side.

Referring to FIG. 2, the active layer 114 and the first conductivity type semiconductor layer 112, which are removed by decreasing the horizontal width of the plurality of holes H toward the upper side, can be reduced, . ≪ / RTI >

Next, as shown in FIG. 5, the channel layer 120 may be formed on the plurality of holes H. FIG. The channel layer 120 may not be formed in a region where the first contact electrode 160 to be formed later is to be formed. Thus, a part of the first conductive type semiconductor layer 112 can be exposed.

The channel layer 120 functions as an electrical insulating layer between the first contact electrode 160, the active layer 114, and the second conductive semiconductor layer 116, which will be formed later.

The channel layer 120 may be formed of one or more materials selected from the group consisting of SiO _x , SiO _x N _y , Al ₂ O ₃ and TiO ₂ .

Also, in an embodiment, the channel layer 120 may have a reflectivity greater than 50%. For example, the channel layer 120 may be formed of a material selected from the group consisting of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ and TiO ₂ , A reflective material may be mixed with the reflective layer.

For example, the channel layer 120 may be formed of a single layer or a thin film of a mixture of at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, And may be formed in multiple layers.

According to the embodiment, when the emitted light returns to the lower side, the light is also reflected from the channel layer 120, thereby minimizing the light absorption and increasing the light efficiency.

Next, a second hole (H2) may be formed in the first conductive semiconductor layer (112). The channel layer 120 may function as a mask for forming the second holes H2, but the present invention is not limited thereto. The second holes H2 may be formed to have a narrower width than the plurality of holes H. [ The protrusion 160p of the first contact electrode 160 may be formed in the second hole H2 in a subsequent process.

According to the second embodiment of the present invention, the first conductive semiconductor layer 112, which overlaps with the first contact electrode 160 formed in the region where the second hole H2 is formed, The diffusion layer 123 can be formed. For example, the second current diffusion layer 123 may be formed in the first conductive semiconductor layer 112, but the present invention is not limited thereto. The second current diffusion layer 123 may be a nitride, an oxide, an amorphous material, or the like. For example, the second current diffusion layer 123 may be formed of Si ₃ N ₄ , SiO ₂ , an amorphous semiconductor layer, or the like, and may be formed as a single layer or multiple layers, but is not limited thereto.

According to the second embodiment, the second current diffusion layer 123 disposed on the first conductive type semiconductor layer 112 on the upper side (reference in FIG. 2) of the first contact electrode 160 to be formed later, Is diffused to the side of the first conductivity type semiconductor layer 112 rather than the upper side of the first conductivity type semiconductor layer 112, the current diffusion efficiency is improved horizontally and the light output can be further improved.

The horizontal width of the second current diffusion layer 123 may be formed to correspond to the horizontal width of the first contact electrode 160 to be formed later. For example, the horizontal width of the second current diffusion layer 123 may be equal to or greater than the horizontal width of the first contact electrode 160 so that the horizontal width of the second current diffusion layer 123 may be greater than that of the first conductivity type semiconductor layer 112 The current spreading efficiency is improved horizontally and the light output can be further improved.

The second current diffusion layer 123 may be thicker than the first current diffusion layer 122. Accordingly, current supplied from the first contact electrode 160 can be diffused in the horizontal direction without passing through the second current diffusion layer 123. Next, as shown in FIG. 6, a second contact electrode 132 may be formed on the second conductive type semiconductor layer 116.

The second contact electrode 132 is in ohmic contact with the second conductive semiconductor layer 116 and includes at least one conductive material, and may be a single layer or a multi-layer structure.

For example, the second contact electrode 132 may include at least one of a metal, a metal oxide, and a metal nitride material.

The second contact electrode 132 includes a transparent material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc nitride), IZTO (indium zinc tin oxide), IAZO zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / / IrOx / Au, Ni / IrOx / Au / ITO, Pt, Ni, Au, Rh or Pd.

7, a protrusion 160p may be formed in the second hole H2, and a first contact electrode 160 may be formed on the protrusion 160p.

The upper surface of the protrusion 160p of the first contact electrode may be disposed higher than the upper surface of the insulating layer 140 (refer to FIG. 2). Accordingly, the first contact electrode 160 also contacts the first conductivity type semiconductor layer 112 in the protrusion 160p, thereby increasing the contact area, thereby reducing the contact resistance and improving the electrical characteristics.

The protrusion 160p of the first contact electrode may be in ohmic contact with the exposed first conductive semiconductor layer 112. [

The first contact electrode 160 may have a circular or polygonal shape when viewed from above, but is not limited thereto.

The upper surface of the first contact electrode 160 may be disposed between the upper surface of the active layer 114 and the upper surface of the first conductive semiconductor layer 112.

The surface of the first conductivity type semiconductor layer 112 to which the first contact electrode 160 contacts is a Ga-face, and may be formed in a flat structure, but is not limited thereto.

Referring to FIG. 7, in the embodiment, the width of the first contact electrode 160 may decrease from the bottom surface to the top surface. On the other hand, the width of the first contact electrode 160 may increase from the bottom surface to the top surface with reference to FIG.

As a result, the possibility that the first contact electrode 160 is short-circuited with the second electrode layer 130, which is formed later, is lowered, and the region in which the first contact electrode 160 contacts the first conductive semiconductor layer 112 is maximized The area occupied by the first contact electrode 160 can be reduced and the light efficiency can be increased.

2, the horizontal width of the bottom surface of the first contact electrode 160 and the horizontal width of the diffusion preventing layer 154 in contact with the first contact electrode 160 coincide with each other, The first contact electrode 160 and the second contact electrode 154 may be minimized, but the electrical characteristics may not be deteriorated.

Next, as shown in FIG. 8, a reflective layer 134 may be formed on the second contact electrode 132.

The reflective layer 134 is disposed on the second contact electrode 132 and may reflect light incident through the second contact electrode 132.

The reflective layer 134 may include one or more layers of materials selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Layer.

Next, as shown in FIG. 9, a capping layer 136 may be formed on the reflective layer 134.

The second electrode layer 130 may include a second contact electrode 132, a reflective layer 134 and a capping layer 136. The second electrode layer 130 may be referred to as a power source Can be supplied to the second conductivity type semiconductor layer (116).

The capping layer 136 may be disposed on the reflective layer 134 and may supply power to the reflective layer 134 from the pad electrode 180. The capping layer 136 may function as a current diffusion layer.

The capping layer 136 may be made of a material having high electrical conductivity such as Sn, Ga, In, Bi, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Al, Pd, Pt, Si, and alloys thereof, and may be formed as a single layer or multiple layers.

Next, an insulating layer 140 may be formed on the capping layer 136 and the channel layer 120, as shown in FIG.

The insulating layer 140 may be formed to expose the first contact electrode 160.

The first contact electrode 160 may be electrically connected to the first conductive semiconductor layer 112 and the insulating layer 140 may be formed on the first contact electrode 160 and the active layer 114, And may be electrically isolated from the semiconductor layer 116.

The insulating layer 140 may be disposed between the first electrode layer 150 and the channel layer 120 to prevent electrical contact.

The insulating layer 140 may be formed of a material selected from SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ .

As described above, the insulating layer 140 may have a reflectance of more than 50%. For example, the insulating layer 140 may be formed of a material selected from SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , And may be formed in a mixed form.

For example, the insulating layer 140 may be formed of a mixture of at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, .

The insulating layer 140 formed between the first contact electrode 160 and the plurality of holes H may be formed of a reflective layer material so that light absorption in the insulating layer 140 that functions as a passivation layer So that the light efficiency can be increased.

11, a diffusion preventing layer 154 is formed on the insulating layer 140 and the first contact electrode 160 and a bonding layer 156 is formed on the diffusion preventing layer 154 .

The diffusion preventing layer 154 and / or the bonding layer 156 may be formed as a single layer or a multilayer including at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, have.

The diffusion preventing layer 154 and / or the bonding layer 156 may be formed of at least one of a deposition method, a sputtering method, and a plating method, or may be attached with a conductive sheet.

The bonding layer 156 may not be formed, but the bonding layer 156 is not limited thereto.

Next, as shown in FIG. 12, a support member 158 may be formed on the bonding layer 156.

The first electrode layer 150 may be referred to as a first electrode layer 150 including the diffusion preventing layer 154, the bonding layer 156 and the supporting member 158. The first electrode layer 150 may be referred to as a power source Can be supplied to the first conductivity type semiconductor layer (112).

The support member 158 may be bonded to the bonding layer 156, but is not limited thereto.

The support member 158 may be a conductive support member and may be formed of at least one of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten It can be one.

The support member 158 may be formed of a carrier wafer (e.g., Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN or the like) As shown in Fig.

Next, as shown in Fig. 13, the growth substrate 105 can be removed. At this time, the surface of the first conductivity type semiconductor layer 112 may be exposed by removing the remaining undoped semiconductor layer (not shown) after removing the growth substrate 105.

The growth substrate 105 may be removed by physical and / or chemical methods. For example, the method of removing the growth substrate 105 may be removed by a laser lift off (LLO) process. For example, the growth substrate 105 is lifted off by irradiating the growth substrate 105 with a laser having a wavelength in a predetermined region.

Alternatively, a buffer layer (not shown) disposed between the growth substrate 105 and the first conductive type semiconductor layer 112 may be removed using a wet etching solution to separate the growth substrate 105.

The upper surface of the first conductivity type semiconductor layer 112 may be exposed by removing the growth substrate 105 and etching or polishing the buffer layer.

The upper surface of the first conductive semiconductor layer 112 may be an N-face, which is closer to the growth substrate.

The upper surface of the first conductive semiconductor layer 112 may be etched by an ICP / RIE (Inductively Coupled Plasma / Reactive Ion Etching) method or may be polished by a polishing apparatus.

Next, as shown in FIG. 14, a part of the light emitting structure layer 110 may be removed, and a part of the channel layer 120 may be exposed.

For example, portions of the first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116 in the region where the pad electrode 180 is to be formed may be removed.

For example, wet etching or dry etching may be performed to remove the periphery of the light emitting structure layer 110, that is, the channel region or the isolation region, which is a boundary region between the chip and the chip, .

The upper surface of the first conductive semiconductor layer 112 may have a light extracting structure, and the light extracting structure may be formed of a roughness or a pattern. The light extracting structure may be formed by a wet or dry etching method.

Next, as shown in FIG. 15, a passivation layer 170 may be formed on the exposed channel layer 120 and the light emitting structure layer 110.

A portion of the capping layer 136 may be exposed by removing a part of the passivation layer 170 and the channel layer 120 in a region where the pad electrode 180 is to be formed.

The passivation layer 170 may be formed of a material selected from SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ .

Next, as shown in FIG. 16, the pad electrode 180 may be formed on the exposed capping layer 136.

The pad electrode 180 may be formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), and molybdenum Or a combination thereof, but it is not limited thereto.

The pad electrode 180 is a portion to be bonded with a wire and may be disposed on a predetermined portion of the light emitting structure layer 110 and may be formed of one or more.

2, a first electrode 159 may be formed under the first electrode layer 150, and the first electrode 159 may be formed of a material having high conductivity, such as Ti, Al, Ni, etc. But it is not limited thereto.

According to embodiments, a light emitting device having improved electrical characteristics, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system can be provided.

Further, according to the embodiment, it is possible to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system in which the light emitting efficiency is improved by improving the carrier injection efficiency.

17 is a view illustrating a light emitting device package to which the light emitting device according to the embodiment is applied.

17, a light emitting device package according to an embodiment includes a body 205, a first lead electrode 213 and a second lead electrode 214 disposed on the body 205, a body 205, And a molding member 240 surrounding the light emitting device 100. The light emitting device 100 may include a light emitting device 100 that is provided on the first lead electrode 213 and the second lead electrode 214 and is electrically connected to the first lead electrode 213 and the second lead electrode 214, .

The body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 213 and the second lead electrode 214 are electrically isolated from each other and provide power to the light emitting device 100. [ The first lead electrode 213 and the second lead electrode 214 may increase the light efficiency by reflecting the light generated from the light emitting device 100. The heat generated from the light emitting device 100 To the outside.

The light emitting device 100 may be disposed on the body 205 or may be disposed on the first lead electrode 213 or the second lead electrode 214.

The light emitting device 100 may be electrically connected to the first lead electrode 213 and the second lead electrode 214 by a wire, flip chip, or die bonding method.

The light emitting device 100 may be mounted on the second lead electrode 214 and connected to the first lead electrode 213 by the wire 250. However, the embodiment is not limited thereto.

The molding member 240 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 240 may include a phosphor 232 to change the wavelength of light emitted from the light emitting device 100. The upper surface of the molding member 240 may be flat, concave or convex, but is not limited thereto.

A plurality of light emitting devices or light emitting device packages according to the embodiments may be arrayed on a substrate, and a lens, a light guide plate, a prism sheet, a diffusion sheet, etc., which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

18 is an exploded perspective view of a lighting apparatus according to an embodiment.

The lighting apparatus according to the embodiment may include a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device or a light emitting device package according to the embodiment.

The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250. The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670. The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The first conductive semiconductor layer 112, the second conductive semiconductor layer 116, the active layer 114,
A plurality of holes H, a first contact electrode 160, an insulating layer 140,
The first electrode layer 150, the second contact electrode 132, the protrusion 160p,
The first current diffusion layer 122, the second current diffusion layer 123,

Claims (8)

A first conductive semiconductor layer;
A second conductive semiconductor layer disposed under the first conductive semiconductor layer;
An active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
A plurality of holes (H) penetrating the second conductivity type semiconductor layer and the active layer from a bottom surface of the second conductivity type semiconductor layer to expose a part of the first conductivity type semiconductor layer;
A first contact electrode electrically connected to the first conductivity type semiconductor layer from the bottom surface of the second conductivity type semiconductor layer through the plurality of holes;
An insulating layer disposed between the first contact electrode and the plurality of holes;
A first current diffusion layer extending to a side of the first contact electrode;
A first electrode layer electrically connected to the first contact electrode; And
And a second contact electrode electrically connected to the second conductive semiconductor layer. The method according to claim 1,
The first current diffusion layer
Wherein the first contact electrode and the second contact electrode are disposed on both sides of the first contact electrode. The method according to claim 1,
And a channel layer disposed between the first contact electrode and the first current diffusion layer. The method according to claim 1,
And a protrusion protruding in the direction of the first conductivity type semiconductor layer. 5. The method of claim 4,
The upper surface of the protrusion of the first contact electrode
And is disposed higher than the upper surface of the insulating layer. The method according to claim 1,
The first electrode layer
A diffusion barrier layer below the first contact electrode,
And a bonding layer on the diffusion preventing layer. The method according to claim 1,
And a second current diffusion layer disposed on the first conductive type semiconductor layer on the upper side of the first contact electrode. A lighting system comprising a light-emitting unit comprising the light-emitting element according to any one of claims 1 to 7.

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