KR20160121425A - 기상 성장 방법 - Google Patents

기상 성장 방법 Download PDF

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Publication number
KR20160121425A
KR20160121425A KR1020160042103A KR20160042103A KR20160121425A KR 20160121425 A KR20160121425 A KR 20160121425A KR 1020160042103 A KR1020160042103 A KR 1020160042103A KR 20160042103 A KR20160042103 A KR 20160042103A KR 20160121425 A KR20160121425 A KR 20160121425A
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KR
South Korea
Prior art keywords
film
reaction chamber
gas
wafer
substrate
Prior art date
Application number
KR1020160042103A
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English (en)
Korean (ko)
Inventor
히데시 다카하시
유우스케 사토
Original Assignee
가부시키가이샤 뉴플레어 테크놀로지
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Publication of KR20160121425A publication Critical patent/KR20160121425A/ko

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    • H01L21/2056—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/2018—
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0503—13th Group
    • H01L2924/05032—AlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10323—Aluminium nitride [AlN]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
KR1020160042103A 2015-04-10 2016-04-06 기상 성장 방법 KR20160121425A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-081147 2015-04-10
JP2015081147A JP6499493B2 (ja) 2015-04-10 2015-04-10 気相成長方法

Publications (1)

Publication Number Publication Date
KR20160121425A true KR20160121425A (ko) 2016-10-19

Family

ID=57250873

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160042103A KR20160121425A (ko) 2015-04-10 2016-04-06 기상 성장 방법

Country Status (4)

Country Link
JP (1) JP6499493B2 (ja)
KR (1) KR20160121425A (ja)
CN (1) CN106057659B (ja)
TW (1) TWI582262B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210003229A (ko) * 2018-05-23 2021-01-11 가부시키가이샤 사무코 Ⅲ족 질화물 반도체 기판 및 그의 제조 방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7152970B2 (ja) * 2019-03-01 2022-10-13 株式会社ニューフレアテクノロジー 気相成長装置
JP7144608B2 (ja) * 2019-05-08 2022-09-29 株式会社ニューフレアテクノロジー 気相成長方法及び気相成長装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100527047B1 (ko) * 2003-07-01 2005-11-09 주식회사 아이피에스 박막증착방법
JP5498640B2 (ja) * 2005-10-14 2014-05-21 大陽日酸株式会社 窒化物半導体製造装置部品の洗浄方法と洗浄装置
JP2009007205A (ja) * 2007-06-28 2009-01-15 Sumitomo Electric Ind Ltd 基板生産物を作製する方法
JP5225928B2 (ja) * 2009-04-28 2013-07-03 株式会社トクヤマ Ｉｉｉ族窒化物半導体の製造方法
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
WO2012157161A1 (ja) * 2011-05-19 2012-11-22 古河機械金属株式会社 半導体製造装置部品の洗浄方法、半導体製造装置部品の洗浄装置および気相成長装置
JP2013012719A (ja) * 2011-05-31 2013-01-17 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
JP5710433B2 (ja) * 2011-09-13 2015-04-30 株式会社東芝 成膜装置のクリーニング方法および成膜装置
TWI570777B (zh) * 2011-12-23 2017-02-11 索泰克公司 減少半導體沉積系統反應腔內非所需沉積物之製程及系統
DE102013104105A1 (de) * 2013-04-23 2014-10-23 Aixtron Se MOCVD-Schichtwachstumsverfahren mit nachfolgendem mehrstufigen Reinigungsschritt
JP6153401B2 (ja) * 2013-07-02 2017-06-28 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210003229A (ko) * 2018-05-23 2021-01-11 가부시키가이샤 사무코 Ⅲ족 질화물 반도체 기판 및 그의 제조 방법

Also Published As

Publication number Publication date
JP2016201481A (ja) 2016-12-01
CN106057659B (zh) 2019-12-13
TW201636448A (zh) 2016-10-16
TWI582262B (zh) 2017-05-11
CN106057659A (zh) 2016-10-26
JP6499493B2 (ja) 2019-04-10

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