KR20160050261A - Atomic layer deposition apparatus - Google Patents

Atomic layer deposition apparatus Download PDF

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Publication number
KR20160050261A
KR20160050261A KR1020140148040A KR20140148040A KR20160050261A KR 20160050261 A KR20160050261 A KR 20160050261A KR 1020140148040 A KR1020140148040 A KR 1020140148040A KR 20140148040 A KR20140148040 A KR 20140148040A KR 20160050261 A KR20160050261 A KR 20160050261A
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KR
South Korea
Prior art keywords
substrate
gas
susceptor
deposition
atomic layer
Prior art date
Application number
KR1020140148040A
Other languages
Korean (ko)
Inventor
윤정아
김경모
Original Assignee
주식회사 케이씨텍
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Filing date
Publication date
Application filed by 주식회사 케이씨텍 filed Critical 주식회사 케이씨텍
Priority to KR1020140148040A priority Critical patent/KR20160050261A/en
Publication of KR20160050261A publication Critical patent/KR20160050261A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Discloses is an atomic layer deposition apparatus for processing a large-sized substrate. A large-sized atomic layer deposition apparatus comprises a process chamber which accommodates substrate to perform a deposition process, a susceptor which horizontally supports the substrates in the process chamber and is rotatable, a gas providing part which is formed in the upper part of the susceptor and provides deposition gases to the substrate, and a partition wall which is formed from the gas providing part to the substrate and isolates part to which the deposition gas is provided.

Description

[0001] ATOMIC LAYER DEPOSITION APPARATUS [0002]

The present invention relates to an atomic layer deposition apparatus, and an atomic layer deposition apparatus capable of isolating a space in which a deposition gas is provided in a gas supply unit that supplies a deposition gas to a substrate.

In recent years, as the degree of integration of semiconductor devices increases in semiconductor manufacturing processes, there is an increasing demand for microfabrication. That is, in order to form a fine pattern and highly integrate the cells on one chip, a new material having a thin film thickness reduction and a high dielectric constant should be developed. Particularly, when a step is formed on the surface of the substrate, it is very important to ensure step coverage, step coverage, and uniformity within the wafer, which smoothly cover the surface. An atomic layer deposition (ALD) method, which is a method of forming a thin film having a minute thickness at the atomic layer level, has been proposed to meet such a requirement.

The ALD process is a method of forming a monolayer by using chemisorption and desorption processes by the surface saturated reaction of reactants on the surface of the substrate. Is a possible thin film deposition method.

The ALD process alternately introduces two or more source gases, respectively, and prevents the source gases from mixing in the gaseous state by introducing purge gas, which is an inert gas, between the inlet of each source gas. That is, one source gas is chemically adsorbed on the substrate surface, and then another source gas reacts to generate a further atomic layer on the substrate surface. Then, such a process is repeated at one cycle until a thin film having a desired thickness is formed.

On the other hand, the source gas must be chemically adsorbed and chemically reacted only on the substrate surface, so that no other surface reaction occurs until one atomic layer is completely formed.

However, in the conventional ALD process, even if the purge gas is supplied to purge the residual source gas in the process chamber, a small amount of the source gas remains in the process chamber, and the remaining source gas and the other source gas are mixed, Particles may be generated as a result of the reaction. In addition, since particles are formed in the thin film formed on the substrate due to the generation of particles, the quality of the thin film is deteriorated.

In addition, as the size of the substrate gradually increases, the volume of the process chamber also increases. Therefore, in order to completely fill the process chamber, the amount of the consumed source gas is increased, and the amount of unnecessarily wasted is increased.

According to the embodiments of the present invention, it is possible to provide an atomic layer deposition apparatus capable of preventing the source gas from diffusing to the outside so as to improve the quality of the thin film and improving the purge effect of the source gas.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to embodiments of the present invention, an atomic layer deposition apparatus includes: a process chamber in which a plurality of substrates are accommodated and a deposition process is performed; A susceptor provided on the susceptor and provided with a plurality of deposition gases on the substrate, and a gas supplier provided from the gas supplier to the substrate, And a partition formed to isolate the provided portion.

According to one aspect, the partition may be formed to enclose a substrate within the substrate to enclose the substrate. The gas supply unit may include a showerhead to which a plurality of deposition gases are respectively provided, and the partition may be provided to seal the showerhead. Here, the barrier ribs may be formed to accommodate one substrate or accommodate a plurality of substrates at the same time.

According to one aspect of the present invention, the barrier rib is protruded at a predetermined height from the gas supply member toward the substrate, and can selectively seal the periphery of the substrate as the susceptor moves up and down. In addition, the barrier ribs may be formed so that the height of the barrier ribs protruding from the gas supply member toward the substrate is adjustable. The partition may include a body portion, an elastic support portion accommodated in the body portion, and a height adjusting member accommodated in the body portion so as to be drawn out and inserted, and elastically supported by the elastic support portion. Here, the length of the height adjusting member may be adjusted as the susceptor moves up and down.

Various embodiments of the present invention may have one or more of the following effects.

As described above, according to the embodiments of the present invention, it is possible to prevent the deposition gases from being mixed with each other by separating the portion provided with the deposition gas into the partition.

Further, even when the size of the process chamber is increased, the deposition gas can be effectively purged, thereby improving the quality of the thin film.

1 is a schematic view of an atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a plan view of the gas providing portion in the atomic layer deposition apparatus of FIG.
3 is a side elevational view for explaining a partition according to an embodiment of the present invention.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference symbols as possible even if they are shown in different drawings. In the following description of the embodiments of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the difference that the embodiments of the present invention are not conclusive.

In describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; may be "connected,""coupled," or "connected. &Quot;

Referring to FIGS. 1 to 3, an atomic layer deposition apparatus according to an embodiment of the present invention will now be described. 1 is a schematic diagram of an atomic layer deposition apparatus 10 according to an embodiment of the present invention, and FIG. 2 is a plan view of a gas supply unit 13 in the atomic layer deposition apparatus 10 of FIG. 3 is a side elevational view for explaining a partition 15 according to an embodiment of the present invention.

Referring to FIG. 1, an atomic layer deposition apparatus 10 includes a process chamber 11, a gas supplier 13, a susceptor 12, and a partition 15.

The process chamber 11 accommodates the substrate 1 and provides a space in which the thin film deposition process for the substrate 1 is performed. For example, the process chamber 11 may have a shape corresponding to that of the susceptor 12, and may have a cylindrical shape surrounding the susceptor 12.

The substrate 1 to be deposited in this embodiment may be a silicon wafer. However, the substrate 1 is not limited to a silicon wafer but may be a transparent substrate 1 including a glass used for a flat panel display device such as a liquid crystal display (LCD) or a plasma display panel (PDP) .

Meanwhile, in the present embodiment, a semi-batch type atomic layer deposition apparatus 10 capable of simultaneously processing a plurality of substrates 1 can be used to increase productivity. Here, the semi-batch type atomic layer deposition apparatus can perform a deposition process on a plurality of substrates 1 at the same time, thereby improving throughput.

The susceptor 12 has a disc shape so that the plurality of substrates 1 can be arranged at regular intervals. However, the susceptor 12 may have various shapes and sizes depending on the type of substrate 1 and the number of substrates 1 that can be placed.

The susceptor 12 has a form in which a thin film of the substrate 1 is supported so that the surface to be deposited is exposed upward, and a plurality of the substrates 1 can be arranged on the same plane. The susceptor 12 is provided with a rotating shaft and a driving unit which are vertically movable up and down relative to the gas supplier 13 and are rotatable and which move the susceptor 12 up and down and rotate.

The gas supplier 13 is provided on the substrate 1 and has a shape corresponding to that of the susceptor 12. Further, the gas supplier 13 injects a plurality of source gases for forming a thin film on the substrate 1 and a purge gas for purifying the source gas (hereinafter, all referred to as deposition gases). For reference, the 'deposition gas' in this embodiment includes at least one kind of gas provided for depositing a thin film on the substrate 1, and includes a source including a constituent material of the thin film to be formed on the substrate 1 A precursor gas, a reactance gas chemically reacting with the source gas, and a purge gas for purifying the source gas and the reactive gas.

The gas supplier 13 is provided with a plurality of showerheads 131, 133, and 135 so as to provide each of the deposition gases to the substrate 1. For example, the gas supplier 13 may include one showerhead 131, 133 each providing a source gas and a reaction gas, two showerheads 131, 133 disposed between the showerheads and each providing a purge gas 135, and a total of four showerheads 131, 133, and 135 may be provided. However, the present invention is not limited thereto, and the number and shape of the shower heads 131, 133, and 135 may be substantially varied.

The gas supplier 13 is provided with a partition 15 for isolating the space where the deposition gas is provided during the thin film deposition process. For example, the partition wall 15 is provided to seal the shower heads 131, 133, and 135. Alternatively, the showerhead 131, 133, 135 may be provided around the shower head 131 to which the source gas is supplied. Here, in the partition 15, a single substrate 1 can be accommodated or a plurality of substrates 1 can be accommodated.

Unlike the above-described embodiment, the barrier rib 15 may be formed to house a single substrate 1 and seal the periphery of the substrate 1.

The barrier ribs 15 are formed so as to protrude to a predetermined height toward the substrate 1 in the gas supplier 13. For example, the barrier ribs 15 may be formed so that the height of the barrier ribs 15 protruding from the gas supplier 13 toward the substrate 1 is adjustable. Particularly, the partition 15 is provided with a height adjustment member 153 which can be drawn out at a predetermined height from the body part 151 and the body part 151 to adjust the height protruding from the body part 151 And an elastic supporting portion 155 provided inside the body portion 151 and elastically supporting the height adjusting member 153 so that the height of the height adjusting member 153 can be adjusted.

The body portion 151 forms an outer appearance of the partition wall 15 and receives the elastic supporting portion 155 and the height adjusting member 153.

The height adjusting member 153 is formed so as to be in contact with the susceptor 12. For example, the height adjusting member 153 is received so as to protrude outside of the predetermined length to the end of the body portion 151. The height adjusting member 153 may be moved to the inside of the body 151 a predetermined distance so as to ensure the hermeticity of the inside of the partition 15 when the height adjusting member 153 is in contact with the susceptor 12 Respectively.

The elastic supporting portion 155 elastically supports the height adjusting member 153. For example, the elastic supporting portion 155 is provided so as to exert an elastic force for restoring the height adjusting member 153 to the initial position. That is, when the height adjusting member 153 and the susceptor 12 are in contact with each other, the resilient supporting portion 155 is compressed and presses the height adjusting member 153 against the susceptor 12. Then, the inside of the partition wall 15 is sealed as the height adjusting member 153 comes into pressure contact with the surface of the susceptor 12.

Since the end of the barrier rib 15 is in contact with the surface of the susceptor 12, the length of the height adjusting member 153 is adjusted as the susceptor 12 moves up and down, Lt; / RTI > However, the present invention is not limited thereto, and the structure and the shape of the barrier ribs 15 may be substantially varied.

On the other hand, unlike the above-described embodiment, the partition 15 may have a fixed height.

The gas supplier 13 may be provided with a discharge unit (not shown) for discharging an exhaust gas containing an unreacted source gas, a reaction byproduct, or the like generated during the thin film deposition process in the process chamber 11 .

According to the present embodiment, since the space in which the deposition gas is provided is isolated due to the provision of the barrier ribs 15, the volume of the reaction space in which the deposition process is performed can be minimized. Since the barrier ribs 15 are provided, the deposition gas can be prevented from diffusing to the outside, and the quality of the deposition of the thin film can be improved. Specifically, since the deposition reaction is performed only in the inner space surrounded by the partition 15, the source gas S is prevented from being adsorbed on the inner wall surface of the process chamber 11. Therefore, by providing the partition 15, the deposition gases remaining on the wall surface of the process chamber 11 are mixed with each other to prevent reaction byproducts from being generated, and the area where the contamination can occur can be minimized. In addition, impurities in the film are contained or the uniformity is lowered due to contamination which may occur in the deposition process, thereby preventing the quality of the thin film from deteriorating.

Further, by reducing the volume of the space in which the partition 15 actually generates the deposition reaction, the amount of the deposition gas consumed in the deposition process can be reduced. In addition, it is possible to reduce the time required for supplying and exchanging the deposition gas, thereby reducing the overall process time and improving the production amount.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

1: substrate
10: atomic layer deposition apparatus
11: Process chamber
12: susceptor
13: Gas supply
131, 133, 135: Shower head
15:
151: Body part
153: height adjustment member
155: elastic support

Claims (8)

A process chamber in which a plurality of substrates are accommodated and a deposition process is performed;
A susceptor in which the plurality of substrates are supported horizontally and rotatably within the process chamber;
A gas supplier provided on the susceptor to supply a plurality of deposition gases to the substrate, respectively; And
Barrier ribs provided to the substrate from the gas supplier and configured to isolate a portion where the deposition gas is provided;
And an atomic layer deposition apparatus.
The method according to claim 1,
Wherein the partition wall is configured to enclose a substrate inside and seal the periphery of the substrate.
The method according to claim 1,
Wherein the gas supply unit is provided with a showerhead to which a plurality of deposition gases are respectively provided,
Wherein the partition wall is provided to close the showerhead.
The method of claim 3,
Wherein the barrier ribs are formed to accommodate one substrate or a plurality of sheets simultaneously.
The method according to claim 1,
Wherein the barrier is protruded at a predetermined height toward the substrate in the gas supplier and selectively closes the periphery of the substrate as the susceptor moves up and down.
6. The method of claim 5,
Wherein the barrier rib is adjustable in height to protrude from the gas supply member toward the substrate.
The method according to claim 6,
Wherein,
Body part;
An elastic support portion accommodated in the body portion; And
A height adjusting member accommodated so as to be able to be drawn out and inserted into the body portion and elastically supported by the elastic supporting portion;
And an atomic layer deposition apparatus.
8. The method of claim 7,
Wherein the height adjusting member adjusts the length of the height adjusting member as the susceptor moves up and down.
KR1020140148040A 2014-10-29 2014-10-29 Atomic layer deposition apparatus KR20160050261A (en)

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KR1020140148040A KR20160050261A (en) 2014-10-29 2014-10-29 Atomic layer deposition apparatus

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KR1020140148040A KR20160050261A (en) 2014-10-29 2014-10-29 Atomic layer deposition apparatus

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022173271A1 (en) * 2021-02-15 2022-08-18 신웅철 Method for manufacturing printed circuit board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022173271A1 (en) * 2021-02-15 2022-08-18 신웅철 Method for manufacturing printed circuit board

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