KR20160035102A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR20160035102A
KR20160035102A KR1020140108922A KR20140108922A KR20160035102A KR 20160035102 A KR20160035102 A KR 20160035102A KR 1020140108922 A KR1020140108922 A KR 1020140108922A KR 20140108922 A KR20140108922 A KR 20140108922A KR 20160035102 A KR20160035102 A KR 20160035102A
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KR
South Korea
Prior art keywords
light emitting
layer
electrode
semiconductor
emitting portion
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KR1020140108922A
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Korean (ko)
Inventor
전수근
김태현
김태진
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주식회사 세미콘라이트
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Priority to KR1020140108922A priority Critical patent/KR20160035102A/en
Priority to PCT/KR2015/005803 priority patent/WO2015190817A1/en
Priority to CN201580031238.3A priority patent/CN106663734B/en
Priority to US15/373,172 priority patent/US10008635B2/en
Priority to CN201810347403.1A priority patent/CN108598251B/en
Publication of KR20160035102A publication Critical patent/KR20160035102A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

The present disclosure relates to a semiconductor light emitting device. The semiconductor light emitting device includes a first light emitting part, a second light emitting part, and a third light emitting part. Each light emitting part includes a plurality of semiconductor layers where a first semiconductor layer having a first conductivity, an active layer which generates light by the recombination of electrons and holes and a second semiconductor layer having a second conductivity different from the first conductivity are successively stacked; a connection electrode which is electrically connected to adjacent light emitting parts among the first light emitting part, the second light emitting part, and the third light emitting part; and an insulating reflection layer which is formed to cover the semiconductor layers and the connection electrode and reflects the light generated in the active layer. A metal layer does not exist on the reflection layer which covers the third light emitting part.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device that reduces a light absorption loss caused by a metal.

Here, the semiconductor light emitting element means a semiconductor light emitting element that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting element. The Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y? A GaAs-based semiconductor light-emitting element used for red light emission, and the like.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

1 is a view showing an example of a conventional Group III nitride semiconductor light emitting device. The III-nitride semiconductor light emitting device includes a substrate 10 (e.g., sapphire substrate), a buffer layer 20 grown on the substrate 10, an n-type III-nitride semiconductor layer 30 grown on the buffer layer 20, The active diffusion layer 40 formed on the p-type III nitride semiconductor layer 30 and the p-type III-nitride semiconductor layer 50 grown on the active layer 40, The p-side bonding pad 70 formed on the current spreading film 60, the p-type III-nitride semiconductor layer 50, and the active layer 40 are exposed in an mesa-etching manner to form an n-type III- An n-side bonding pad 80 formed on the substrate 30, and a protective film 90.

The buffer layer 20 is intended to overcome the difference between the lattice constant and the thermal expansion coefficient between the substrate 10 and the n-type III nitride semiconductor layer 30. In U.S. Patent No. 5,122,845, US Pat. No. 5,290,393 discloses a technique of growing an AlN buffer layer having a thickness of 100 ANGSTROM to 500 ANGSTROM at a temperature of 200 to 900 DEG C, 1-x) N (0 < x < 1) buffer layer is disclosed in US Patent Application Publication No. 2006/154454, and a SiC buffer layer (seed layer) is grown at a temperature of 600 캜 to 990 캜 And growing an In (x) Ga (1-x) N (0 &lt; x? 1) layer thereon. A GaN layer which is not doped is grown before the growth of the n-type III-nitride semiconductor layer 30, which may be regarded as a part of the buffer layer 20 or a part of the n-type III-nitride semiconductor layer 30 .

The current diffusion conductive film 60 is provided to supply current to the entire p-type III nitride semiconductor layer 50 well. The current diffusion conductive film 60 is formed over substantially the entire surface of the p-type III nitride semiconductor layer 50. For example, ITO, ZnO, or Ni and Au may be used to form the light-transmitting conductive film, or Ag may be used Thereby forming a reflective conductive film.

The p-side bonding pad 70 and the n-side bonding pad 80 are metal electrodes for supplying a current and for wire bonding to the outside, for example, nickel, gold, silver, chromium, titanium, platinum, , Iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten, molybdenum or any combination thereof.

The protective film 90 is formed of a material such as silicon dioxide and may be omitted.

2 is a diagram showing an example of LEDs A and B connected in series disclosed in U.S. Patent No. 6,547,249. Due to various advantages, a plurality of LEDs A and B are connected in series as shown in Fig. For example, when a plurality of LEDs (A, B) are connected in series, the number of external circuits and wire connections is reduced, and the light absorption loss due to the wires is reduced. Further, since the operating voltage of the LEDs A and B connected in series increases, the power supply circuit can be further simplified. In the case where a plurality of LEDs (A, B) are connected in series on a single substrate, the mounting density can be improved because the area occupied by the individual semiconductor light emitting devices is smaller than that of connecting the individual semiconductor light emitting devices in series, It is possible to reduce the size of the lighting apparatus and the like.

On the other hand, in order to connect the plurality of LEDs A and B in series, the interconnector 34 is deposited to connect the p-side electrode 32 and the n-side electrode 32 of the neighboring LEDs A and B. However, in the isolation process for electrically isolating the plurality of LEDs A and B, a plurality of semiconductor layers must be etched so that the sapphire substrate 20 is exposed. Since the etching depth is long and takes a long time, It is difficult to form the inter connecter 34. When the insulator 30 is used to form a gentle inclination of the inter connecter 34 as shown in Fig. 2, the spacing between the LEDs A and B increases, which leads to a problem in improving the degree of integration.

3 is a diagram showing another example of a series-connected LED disclosed in U.S. Patent No. 6,547,249. Another method of isolating the plurality of LEDs A and B is to perform ion implantation without etching the lower semiconductor layer 22 (e.g., the n-type nitride semiconductor layer) between the plurality of LEDs A and B ion implantation to isolate the plurality of LEDs A and B, the step of the inter connecter 34 is reduced. However, it is difficult to implant ions deep into the lower semiconductor layer 22, which is a problem because the process time is long.

Fig. 4 is a diagram showing an example of an LED array disclosed in U.S. Patent No. 7,417,259, in which an LED array two-dimensionally arrayed on an insulating substrate is formed for high-voltage drive and low-current drive. A sapphire monolithic substrate is used as the insulating substrate, and two LED arrays are connected in parallel in the reverse direction on the substrate. Therefore, an AC power source can be directly used as a driving power source.

5 shows an example of a semiconductor light emitting device disclosed in U.S. Patent No. 7,262,436. The semiconductor light emitting device includes a substrate 100, an n-type semiconductor layer 300 grown on the substrate 100 and grown on the substrate 100, an active layer 400 grown on the n-type semiconductor layer 300, a p-type semiconductor layer 500 grown on the active layer 400, electrodes 901, 902 and 903 functioning as reflective films formed on the p-type semiconductor layer 500, And an n-side bonding pad 800 formed on the exposed n-type semiconductor layer 300.

A chip having such a structure, that is, a chip in which both the electrodes 901, 902, 903 and the electrode 800 are formed on one side of the substrate 100 and the electrodes 901, 902, 903 function as a reflection film is called a flip chip . Electrodes 901,902 and 903 may be formed of a highly reflective electrode 901 (e.g., Ag), an electrode 903 (e.g., Au) for bonding, and an electrode 902 (not shown) to prevent diffusion between the electrode 901 material and the electrode 903 material. For example, Ni). Such a metal reflection film structure has a high reflectance and an advantage of current diffusion, but has a disadvantage of light absorption by a metal.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a first light emitting portion, a second light emitting portion, and a third light emitting portion, each of the light emitting portions includes: A first semiconductor layer having a first conductivity and a second semiconductor layer having a second conductivity different from the first conductivity, and a plurality of semiconductor layers sequentially stacked on the first semiconductor layer, the active layer generating light through recombination of electrons and holes, A second light emitting portion, and a third light emitting portion; A connection electrode electrically connecting neighboring light emitting portions of the first light emitting portion, the second light emitting portion, and the third light emitting portion; And an insulating reflection layer formed to cover the plurality of semiconductor layers and the connection electrode and reflecting the light generated in the active layer, and the reflective layer covering the third light emitting portion has no metal layer.

This will be described later in the Specification for Implementation of the Invention.

FIG. 1 is a view showing an example of a conventional Group III nitride semiconductor light emitting device,
2 is a diagram illustrating an example of a cascaded LED disclosed in U.S. Patent No. 6,547,249,
3 is a diagram illustrating another example of a cascaded LED disclosed in U.S. Patent No. 6,547,249,
4 is a diagram showing an example of an LED array disclosed in U.S. Patent No. 7,417,259,
5 is a view showing an example of a semiconductor light emitting device disclosed in U.S. Patent No. 7,262,436,
6 is a view for explaining one feature of the semiconductor light emitting device according to the present invention,
7 is a view showing examples in which the interval between the electrodes and the area ratio are changed,
FIG. 8 is a graph showing the results of the experiments described in FIG. 7,
9 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure,
10 is a view for explaining an example of a cutting plane taken along line AA in FIG. 9,
11 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure,
12 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure,
13 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure,
14 is a view for explaining an example of a cross section taken along a line CC in Fig. 13,
15 is a view for explaining an example of use of the light emitting device according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

FIG. 6 is a view for explaining one feature of the semiconductor light emitting device according to the present invention, in which the semiconductor light emitting device includes a first light emitting portion, a second light emitting portion, and a third light emitting portion, And a plurality of semiconductor layers including a first semiconductor layer, an active layer that generates light through recombination of electrons and holes, and a second semiconductor layer that has a first conductivity and a second conductivity that is different from the first conductivity, A second light emitting portion, and a third light emitting portion; A connection electrode electrically connecting neighboring light emitting portions of the first light emitting portion, the second light emitting portion, and the third light emitting portion; And an insulating reflection layer formed to cover the plurality of semiconductor layers and the connection electrode and reflecting the light generated in the active layer, and a metal layer is not formed on the reflection layer covering the third light emitting portion.

In Fig. 6, as an example of the insulating reflective film, the insulating reflective film 91 may be formed of a single dielectric layer or may have a multilayer structure. In this embodiment, the insulating reflective film 91 is formed of a non-conductive material in order to reduce light absorption by the metal reflective film. The insulating reflective film 91 includes a dielectric film 91b, a distributed Bragg reflector 91a Bragg Reflector) and a clad film 91c.

In forming the semiconductor light emitting device, a height difference is caused by the trench between the electrode and the light emitting portions. Therefore, by forming the dielectric film 91b having a certain thickness prior to the deposition of the distribution Bragg reflector 91a requiring precision, it is possible to stably manufacture the distribution Bragg reflector 91a, You can give.

SiO 2 is suitable as the material of the dielectric film 91b, and its thickness is preferably 0.2 um to 1.0 um. If the thickness of the dielectric film 91b is too thin, it may be insufficient to cover the lower electrodes 71 and 81 having a height of about 2 to 3 micrometers. If the dielectric film 91b is too thick, It can be a burden. The thickness of the dielectric film 91b may be thicker than the thickness of the subsequent distributed Bragg reflector 91a. Further, the dielectric film 91b needs to be formed by a method that is more suitable for ensuring reliability of the device. For example, the dielectric film 91b made of SiO 2 is preferably formed by CVD (Chemical Vapor Deposition), in particular, plasma enhanced chemical vapor deposition (PECVD). This is because chemical vapor deposition is more advantageous than physical vapor deposition (PVD) such as electron beam evaporation (E-Beam Evaporation) in step coverage. Specifically, when the dielectric film 91b is formed by E-Beam Evaporation, the dielectric film 91b is hardly formed in the designed thickness in the height difference region, and the reflectance of light may be lowered , There may be a problem in electrical insulation. Therefore, it is preferable that the dielectric film 91b is formed by a chemical vapor deposition method for reducing the height difference and ensuring insulation. Therefore, it is possible to secure the function of the reflective film while securing the reliability of the semiconductor light emitting element.

The distribution Bragg reflector 91a is formed on the dielectric film 91b. Distributed Bragg reflector (91a) is, for example, pairs of SiO 2 and TiO 2 are laminated is made a plurality of times. In addition, distributed Bragg reflector (91a) can be configured with a combination, such as Ta 2 O 5, HfO, ZrO , SiN , such as high refractive index material than the low dielectric thin film (typically, SiO 2) refractive index. For example, a distributed Bragg reflector (95a) is a SiO 2 / TiO 2, SiO 2 / Ta 2 O 2, or SiO 2 / can be made by repeated lamination of HfO and, Blue on for SiO 2 / TiO 2 the reflection efficiency light , And SiO 2 / Ta 2 O 2 or SiO 2 / HfO for the UV light will have a good reflection efficiency. Distributed Bragg reflector (91a) is in consideration of the reflection light according to the incident angle and the wavelength of the optical thickness of one-quarter of the wavelength of light emitted from the active layer 40 in the base case consisting of a SiO 2 / TiO 2 subjected to the optimization process And the thickness of each layer does not necessarily have to be kept at 1/4 the optical thickness of the wavelength. The number of combinations is 4 to 40 pairs. In the case where the distribution Bragg reflector 91a has a repetitive layer structure of SiO 2 / TiO 2 , the distribution Bragg reflector 91 a may be formed by physical vapor deposition (PVD), E-Beam Evaporation or sputtering It is preferably formed by sputtering or thermal evaporation.

A clad layer (91c) may be formed of a dielectric film (91b), material of MgF, CaF, such as a metal oxide, SiO 2, SiON, such as Al 2 O 3. It is preferable that the clad film 91c has a thickness of lambda / 4n to 3.0 um. Where lambda is the wavelength of the light generated in the active layer 40 and n is the refractive index of the material forming the clad film 91c. and 4500/4 * 1.46 = 771A or more when? is 450 nm (4500 A).

Considering that the uppermost layer of the distributed Bragg reflector 91a composed of a large number of pairs of SiO 2 / TiO 2 may be TiO 2 , but considering that it can be made of an SiO 2 layer having a thickness of λ / 4n, Is preferably thicker than? / 4n so as to be differentiated from the uppermost layer of the distribution Bragg reflector 91a located below. However, it is not only burdensome to the subsequent opening forming process, but also increases the thickness because the cladding film 91c can increase the material cost without contributing to the improvement of the efficiency. Therefore, in order not to burden the subsequent process, it is appropriate that the maximum value of the thickness of the clad film 91c is formed within 1 mu m to 3 mu m. However, in some cases it is not impossible to form more than 3.0 μm.

It is preferable that the effective refractive index of the first distributed Bragg reflector 91a is larger than the refractive index of the dielectric film 91b for light reflection and guidance. When the distributed Bragg reflector 91a and the electrodes 75 and 85 are in direct contact with each other, a part of the light traveling through the distributed Bragg reflector 91a can be absorbed by the electrodes 75 and 85. [ Therefore, when the clad film 91c having a refractive index lower than that of the distributed Bragg reflector 91a is introduced, the light absorption by the electrodes 75 and 85 can be greatly reduced. When the refractive index is selected in this way, the dielectric film 91b-distributed Bragg reflector 91a-clad film 91c can be described in terms of an optical waveguide. The optical waveguide is a structure for guiding light by surrounding the propagating portion of the light with a material having a lower refractive index than that of the light guiding portion. From this viewpoint, the dielectric film 91b and the clad film 91c can be seen as a part of the optical waveguide as a configuration surrounding the propagating portion, when the distributed Bragg reflector 91a is regarded as a propagation portion.

For example, a distributed Bragg reflector (91a) is a light-transmitting material to prevent absorption of light (for example; SiO 2 / TiO 2) if formed from a dielectric film (91b) has a refractive index distribution of the effective refractive index of the Bragg reflector (91a) Lt; RTI ID = 0.0 &gt; SiO2. &Lt; / RTI &gt; Here, the effective refractive index means an equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices. A clad layer (91c) also distributed low material than the effective refraction index of the Bragg reflector (91a): may be made of (for example, Al 2 O 3, SiO 2, SiON, MgF, CaF). If distributed Bragg reflector (91a) is composed of SiO 2 / TiO 2, and a refractive index of 1.46 of SiO 2, because the refractive index of TiO 2 is 2.4, the effective refractive index of the distributed Bragg reflector has a value of between 1.46 and 2.4. Therefore, the dielectric film 91b may be made of SiO 2 , and the thickness thereof is suitably from 0.2 탆 to 1.0 탆. The clad film 91c may also be formed of SiO 2 having a refractive index of 1.46 which is smaller than the effective refractive index of the distributed Bragg reflector 91a.

The dielectric film 91b may be omitted from the viewpoint of the entire technical idea of the present disclosure and it is also possible to consider the configuration of the distributed Bragg reflector 91a and the clad film 91c There is no reason to exclude. The dielectric Bragg reflector 91a may be replaced with a dielectric film 91b made of TiO 2 which is a dielectric material. It is also conceivable to omit the clad film 91c when the distributed Bragg reflector 91a has the SiO 2 layer as the uppermost layer. If the dielectric film 91b and the distributed Bragg reflector 91a are designed in consideration of the reflectance of light traveling substantially in the transverse direction, even if the distributed Bragg reflector 91a has the TiO 2 layer as the uppermost layer, It is also conceivable to omit the film 91c.

Thus, the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as the optical reflective guide 91 as a waveguide, and preferably have a total thickness of 1 to 8 um.

As illustrated in FIG. 6, the distribution Bragg reflector 91a has a higher reflectance as the light L3 closer to the vertical direction, and thus reflects more than 99%. However, the obliquely incident lights L1 and L2 pass through the distribution Bragg reflector 91a and are incident on the upper surface of the clad film 91c or the insulating reflection film 91 and are not covered by the electrodes 75 and 85 (L1), the light L2 incident on the electrodes 75 and 85 is partially absorbed.

7A and 7B), 450um (FIG. 7C), and 600UM (FIG. 7D), and FIG. 7 is a diagram showing examples of changing the interval between the electrodes and the area ratio. The edge of the electrode and the edge of the electrode are constant. The width (b) of the electrode is 485, 410, 335, and 260 um, and the length (a) of the electrode is 520um. The distance between the edges of the light emitting device is 1200um, the length c is 600um, Do. The planar area of the light emitting device and the area ratio of the electrodes are 0.7, 0.59, 0.48, and 0.38, respectively. When the electrode interval is 80um as a comparison standard, the area ratio is 0.75. It was found that when the electrode areas are the same, there is no significant difference in luminance even when the electrode intervals change.

FIG. 8 is a graph showing the results of the experimental examples described with reference to FIG. 7, in which the reference luminance is 106.79 (FIG.7A), 108.14 (FIG.7B), 109.14 (FIG.7C), and 111.30 And the luminance was confirmed. It can be seen that the increase in luminance is considerably high. If the area ratio of the electrodes is made smaller than 0.38, the luminance may further increase.

FIG. 9 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure, and FIG. 10 is a view for explaining an example of a cut surface taken along the line A-A in FIG.

The semiconductor light emitting device includes a substrate, a first light emitting portion, a second light emitting portion, a third light emitting portion, a reflective layer, a first electrode, and a second electrode. The first light emitting portion, the second light emitting portion, and the third light emitting portion each include a plurality of semiconductor layers in which a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked. The reflective layer is formed so as to cover the plurality of semiconductor layers, and reflects light generated in the active layer toward the substrate side. The first electrode is provided to be in electrical communication with the first semiconductor layer of the first light emitting portion and supplies one of electrons and holes. The second electrode is provided to be in electrical communication with the second semiconductor layer of the second light emitting portion, and supplies the remaining one of electrons and holes. There is no metal layer on the reflective layer covering the third light emitting portion. As described above, by providing the light emitting portion having no metal layer on the reflective layer among the plurality of light emitting portions, the ratio of the first electrode and the second electrode to the area of the insulating reflective layer of the entire light emitting portion can be greatly reduced. Therefore, the light absorption loss due to the metal layer formed on the insulating reflection layer described in Figs. 6 to 8 is greatly reduced, and as a result, the brightness is improved. Hereinafter, a group III nitride semiconductor light emitting device will be described as an example.

The substrate 10 is mainly made of sapphire, SiC, Si, GaN or the like, and the substrate 10 can be finally removed. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and they are mainly composed of GaN in the III-nitride semiconductor light emitting device.

The plurality of semiconductor layers includes a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (e.g., Si-doped GaN) 30, a second semiconductor layer 30 having a second conductivity different from the first conductivity, (For example, Mg-doped GaN) 50 and an active layer 40 (e.g., InGaN / (GaN)) interposed between the first semiconductor layer 30 and the second semiconductor layer 50 and generating light through recombination of electrons and holes In) GaN multiple quantum well structure). Each of the plurality of semiconductor layers 30, 40, and 50 may have a multi-layer structure, and the buffer layer 20 may be omitted.

At least one of the first electrode 80 and the second electrode 70 is provided on the opposite side of the plurality of semiconductor layers with respect to the reflective layer R and the reflective layer R R is a flip chip that is in electrical communication with a plurality of semiconductor layers through an electrical connection.

The semiconductor light emitting element may include a plurality of light emitting portions. In this example, the semiconductor light emitting element includes first, second, and third light emitting portions 101, 102, and 103, and includes connecting electrodes 92a and 92b and electrical connections 71 and 81. [ The first, second, and third light emitting portions 101, 102, 103 are arranged in a row in this example so as to face each other. The connection electrodes 92a and 92b electrically connect the opposed light emitting portions. One end of the connecting electrodes 92a and 92b is electrically connected to the second semiconductor layer 50 between the second semiconductor layer 50 and the reflective layer R and the other ends of the connecting electrodes 92a and 92b The second semiconductor layer 50 and the active layer are etched and electrically connected to the exposed first semiconductor layer 30. Accordingly, the first, second, and third light emitting units 101, 102, and 103 are connected in series and are driven at a higher voltage than one light emitting unit.

The reflective layer R covers the first, second, and third light emitting portions 101, 102, and 103 and the connection electrodes 92a and 92b. The first electrode 80 and the second electrode 70 are formed on the reflective layer R corresponding to the first light emitting portion 101 and the second light emitting portion 102, respectively. The first electrical connection 81 electrically connects the first electrode 80 and the first semiconductor layer 30 through the reflective layer R. A first ohmic electrode 82 may be interposed between the first electrical connection 81 and the first semiconductor layer 30 for reduced contact resistance and stable electrical connection. Preferably, a current diffusion electrode 60 (e.g., ITO, Ni / Au) is formed between the second semiconductor layer 50 and the reflective layer R. The second electrical connection 71 penetrates the reflective layer R to electrically connect the second electrode 70 and the current diffusion electrode 60. The second ohmic electrode 72 can be interposed for reducing the contact resistance between the second electrical connection 71 and the current spreading electrode 60 and for stable electrical connection.

In this embodiment, the reflective layer R is formed of an insulating material to reduce light absorption by the metal reflective layer, and may preferably be a multi-layer structure including a DBR (Distributed Bragg Reflector) or an ODR (Omni-Directional Reflector). As one example of the multilayer structure, the insulating reflection layer described in Figs. 6 to 8 may be used.

The distribution Bragg reflector 91a has a higher reflectance as the light closer to the vertical direction reflects more than 99%. For the reflective layer (R) to function well, each layer of the multi-layer structure must be well-formed to a specially designed thickness. The reflective layer R has portions where the height difference is generated in the reflective layer R due to the following structures (e.g., ohmic electrodes, trenches between light emitting portions, and the like). Due to such a height difference, there is a region where each material layer of the reflection layer R is difficult to be formed with a designed thickness, and reflection efficiency may be lowered in this region. The reflection efficiency may be lower than that of the other portions between the light emitting portions. Accordingly, it is preferable that the metal layer is formed as small as possible between the light emitting portions to reduce light absorption loss caused by the metal. In this example, there is no metal layer other than the connecting electrode between the light emitting portions, which is advantageous in reducing light absorption loss due to the metal.

The first electrode 80 and the second electrode 70 are electrodes for electrical connection with external electrodes, and may be eutectic-bonded, soldered, or wire-bonded with external electrodes. The external electrode may be a conductive part provided on the submount, a lead frame of the package, an electric pattern formed on the PCB, or the like, and the shape of the lead wire provided independently of the semiconductor light emitting element is not particularly limited. The first electrode (80) and the second electrode (70) are formed to have a certain area to be a heat dissipation path.

FIG. 11 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and further includes a fifth light emitting portion 105 between the third light emitting portion 103 and the fourth light emitting portion 104. A first electrode and a second electrode are provided in the first light emitting portion and the second light emitting portion and a metal layer such as an electrode or a conductive pad is not formed on the reflection layer R of the third light emitting portion to the fifth light emitting portion. In this embodiment, the ratio of the first electrode and the second electrode to the area of the insulating reflection layer of the entire light emitting portion can be set to 0.4 or less.

12 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, wherein a plurality of light emitting portions are connected in series by connecting electrodes in the form of 3 * 3. The first electrode 80 is formed on the reflective layer R of the first light emitting portion at one end of the series connection and the second electrode 70 is formed over the reflective layer R of the second light emitting portion at the other end of the series connection do. The auxiliary pads 75 and 85 are respectively formed in the light emitting portion facing the first light emitting portion and the light emitting portion facing the second light emitting portion and electrically connected to the first electrode 80 and the second electrode 80b by the conductive portions 94a and 94b, Two electrodes 70 are connected. Additional auxiliary pads 77 can be formed in the central light emitting portion and are formed to maintain electrical neutrality. A metal layer is not formed on the reflective layer (R) of the remaining light emitting portion, and the light absorption loss due to the metal layer is reduced.

As described above, the above-described advantages of connecting the electrode and the auxiliary pad to each other by the conductive portion 94a, the advantage of having the electrically neutral auxiliary pad, the advantage of having no metal layer on the reflective layer R, The light emitting device of the combined type having only the features of FIG.

FIG. 13 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and FIG. 14 is a view for explaining an example of a cross section taken along line C-C of FIG. In this example, the first, second, third, and fourth light emitting portions are connected in parallel by an upper connecting electrode 94b and a lower connecting electrode 94a. A first electrode 80 is provided in the first light emitting portion and is electrically connected to the first semiconductor layer by a first electrical connection 81. The second electrode 70 is provided on the reflective layer of the second light emitting portion and is electrically connected to the second semiconductor layer by a second electrical connection 71. The third light emitting portion, and the fourth light emitting portion, there is no metal layer. The upper connection electrode 94b is covered by the reflective layer R and electrically connects the second semiconductor layer 50 of the neighboring light emitting portion to each other. The lower connection electrode 94a is covered with the reflective layer R and electrically connects the first semiconductor layer 30 of the neighboring light emitting portion to each other.

15 is a view for explaining an example of use of the light emitting device according to the present disclosure, in which the light emitting device is mounted on a submount such as the PCB 201 shown in the upper side of Fig. 15, As shown in FIG. The PCB and the plate are provided with external electrodes or conductors 203 and 205 for power supply and the plates 203 and 205 are fixed by the insulator 201 in the plate and have a generally flat shape.

If the first electrode 70 and the second electrode 80 are respectively bonded to the external electrodes 203 and 205 for power supply and the light emitting portion having no metal layer is provided on the reflection layer between the external electrodes, The reliability of the mounting or bonding process can be improved.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting device comprising: a first light emitting portion, a second light emitting portion, and a third light emitting portion, wherein each light emitting portion includes: a first semiconductor layer having a first conductivity; A second light emitting portion, and a third light emitting portion including a plurality of semiconductor layers in which an active layer to be formed and a second semiconductor layer having a second conductivity different from the first conductivity are sequentially stacked; A connection electrode electrically connecting neighboring light emitting portions of the first light emitting portion, the second light emitting portion, and the third light emitting portion; And an insulating reflection layer formed to cover the plurality of semiconductor layers and the connection electrode and reflecting the light generated in the active layer, and the reflective layer covering the third light emitting portion has no metal layer.

(2) a first electrode which is provided in electrical communication with the first semiconductor layer and supplies one of electrons and holes; And a second electrode that is provided to be in electrical communication with the second semiconductor layer and supplies the remaining one of electrons and holes, wherein the reflective layer has an insulation property, and at least one of the first electrode and the second electrode is a reflective layer, Wherein the semiconductor layer is a flip chip provided on the opposite side of the plurality of semiconductor layers.

(3) The semiconductor light emitting device according to any one of (1) to (3), wherein the reflective layer comprises one of a distributed Bragg reflector and an omni-directional reflector.

(4) The semiconductor light emitting device according to any one of (1) to (4), wherein the connection electrode electrically connects the first semiconductor layer and the second semiconductor layer of the light emitting portions facing each other.

(5) The semiconductor light emitting device according to (5), wherein the connection electrodes electrically connect the semiconductor layers having the same conductivity of the light emitting portions facing each other.

(6) a first electrical connection that electrically connects the first semiconductor layer and the first electrode provided on the insulating reflection layer of the first light emitting portion through the insulating reflection layer; And a second electrical connection electrically connecting the second semiconductor layer and the second electrode provided on the insulating reflection layer of the second light emitting portion through the insulating reflection layer.

(7) the fourth light emitting portion; And an auxiliary pad provided on the insulating reflection layer of the fourth light emitting portion.

(8) One end of the connection electrode is provided between the second semiconductor layer and the reflective layer, and the other end of the connection electrode is electrically connected to the exposed first semiconductor layer by etching the second semiconductor layer and the active layer. Semiconductor light emitting device.

(9) the connection electrode comprises: a lower connection electrode for electrically connecting the first semiconductor layer of the neighboring light emitting portions; And an upper connection electrode electrically connecting the second semiconductor layers of neighboring light emitting portions.

(10) at least one additional light emitting portion having no metal layer on the insulating reflection layer, wherein the sum of the areas of the first electrode and the second electrode is the sum of the areas of the first to third light emitting portions and the insulating reflection layer of at least one additional light emitting portion Is 0.5 times or less the sum of the areas of the semiconductor light emitting elements.

According to one semiconductor light emitting device according to the present disclosure, the light absorption loss is reduced, and as a result, the brightness is improved.

According to another semiconductor light emitting device according to the present disclosure, the ratio of the metal layer provided on the reflection layer is small and the brightness is improved.

According to another semiconductor light emitting device according to the present disclosure, the light absorption loss due to the metal reflection film is reduced by using the insulating reflection layer.

The first semiconductor layer 30, the active layer 40, the second semiconductor layer 50, the reflective layer R,
The first electrode 80, the second electrode 70, the auxiliary pads 75 and 85,

Claims (10)

In the semiconductor light emitting device,
Each of the light emitting portions includes: a first semiconductor layer having a first conductivity; an active layer that generates light through recombination of electrons and holes; and a second conductive layer that is different from the first conductivity. A second light emitting portion, and a third light emitting portion including a plurality of semiconductor layers in which a second semiconductor layer having a second conductivity is sequentially stacked;
A connection electrode electrically connecting neighboring light emitting portions of the first light emitting portion, the second light emitting portion, and the third light emitting portion; And
And an insulating reflection layer formed to cover the plurality of semiconductor layers and the connection electrode and reflecting the light generated in the active layer,
And a metal layer is not formed on the reflective layer covering the third light emitting portion. The method according to claim 1,
A first electrode which is provided in electrical communication with the first semiconductor layer and supplies one of electrons and holes; And
And a second electrode electrically connected to the second semiconductor layer and supplying the other of the electrons and the holes,
Wherein the reflective layer has an insulation property and at least one of the first electrode and the second electrode is a flip chip provided on the opposite side of the plurality of semiconductor layers with respect to the reflective layer. The method according to claim 1,
Wherein the reflective layer comprises one of a distributed Bragg reflector (OCD) and an Omni-Directional Reflector (ODR). The method according to claim 1,
And the connection electrode electrically connects the first semiconductor layer and the second semiconductor layer of the light emitting portions facing each other. The method according to claim 1,
Wherein the connection electrodes electrically connect the semiconductor layers having the same conductivity of the light emitting portions facing each other. The method of claim 2,
A first electrical connection that passes through the insulating reflection layer and electrically communicates the first semiconductor layer and the first electrode provided on the insulating reflection layer of the first light emitting portion; And
And a second electrical connection that passes through the insulating reflection layer and electrically connects the second semiconductor layer and the second electrode provided on the insulating reflection layer of the second light emitting portion. The method of claim 6,
A fourth light emitting portion; And
And an auxiliary pad provided on the insulating reflection layer of the fourth light emitting portion. The method of claim 4,
Wherein one end of the connection electrode is provided between the second semiconductor layer and the reflective layer and the other end of the connection electrode is electrically connected to the exposed first semiconductor layer by etching the second semiconductor layer and the active layer, . The method of claim 5,
The connecting electrodes are:
A lower connection electrode electrically connecting the first semiconductor layers of neighboring light emitting portions; And
And upper connection electrodes electrically connecting the second semiconductor layers of neighboring light emitting portions. The method of claim 6,
And at least one additional light-emitting portion having no metal layer on the insulating reflection layer,
Wherein the sum of the areas of the first electrode and the second electrode is equal to or less than 0.5 times the sum of areas of the first to third light emitting portions and the insulating reflection layer of at least one additional light emitting portion.
KR1020140108922A 2014-06-10 2014-08-21 Semiconductor light emitting device KR20160035102A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020140108922A KR20160035102A (en) 2014-08-21 2014-08-21 Semiconductor light emitting device
PCT/KR2015/005803 WO2015190817A1 (en) 2014-06-10 2015-06-10 Semiconductor light-emitting element
CN201580031238.3A CN106663734B (en) 2014-06-10 2015-06-10 Semiconductor light-emitting elements
US15/373,172 US10008635B2 (en) 2014-06-10 2015-06-10 Semiconductor light-emitting element
CN201810347403.1A CN108598251B (en) 2014-06-10 2015-06-10 Semiconductor light emitting element

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019050296A3 (en) * 2017-09-08 2019-04-25 주식회사 세미콘라이트 Semiconductor light emitting device and method for manufacturing same
CN110192276A (en) * 2017-11-27 2019-08-30 首尔伟傲世有限公司 LED unit for display and the display equipment with the LED unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019050296A3 (en) * 2017-09-08 2019-04-25 주식회사 세미콘라이트 Semiconductor light emitting device and method for manufacturing same
CN110192276A (en) * 2017-11-27 2019-08-30 首尔伟傲世有限公司 LED unit for display and the display equipment with the LED unit

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