KR101683683B1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

Info

Publication number
KR101683683B1
KR101683683B1 KR1020150086786A KR20150086786A KR101683683B1 KR 101683683 B1 KR101683683 B1 KR 101683683B1 KR 1020150086786 A KR1020150086786 A KR 1020150086786A KR 20150086786 A KR20150086786 A KR 20150086786A KR 101683683 B1 KR101683683 B1 KR 101683683B1
Authority
KR
South Korea
Prior art keywords
reflective film
conductive reflective
layer
semiconductor
base
Prior art date
Application number
KR1020150086786A
Other languages
Korean (ko)
Inventor
최일균
Original Assignee
주식회사 세미콘라이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Priority to KR1020150086786A priority Critical patent/KR101683683B1/en
Priority to PCT/KR2016/003475 priority patent/WO2016159744A1/en
Priority to US15/563,273 priority patent/US10158047B2/en
Application granted granted Critical
Publication of KR101683683B1 publication Critical patent/KR101683683B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present disclosure relates to a semiconductor light emitting device, comprising: a base; A semiconductor device comprising: a plurality of semiconductor layers located on a base, the first semiconductor layer having a first conductivity, the second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer interposed between the first and second semiconductor layers A plurality of semiconductor layers each having an active layer that generates light by recombination of electrons and holes; An electrode electrically connected to the plurality of semiconductor layers to supply one of electrons and holes; A first non-conductive reflective film for reflecting light from an active layer between a base and a plurality of semiconductor layers, comprising: a first non-conductive reflective film having a plurality of layers; And a second non-conductive reflective film that reflects light that has passed through the first non-conductive reflective film between the base and the first non-conductive reflective film, wherein the second non-conductive reflective film has a plurality of layers made of a material different from that of the first non- 2 non-conductive reflective film.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device in which light absorption loss is reduced and brightness is improved.

Here, the semiconductor light emitting element means a semiconductor light emitting element that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting element. The Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y? A GaAs-based semiconductor light-emitting element used for red light emission, and the like.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

FIG. 1 shows an example of a conventional III-nitride semiconductor light-emitting device. The III-nitride semiconductor light-emitting device includes a substrate 10, a buffer layer 20 grown on the substrate 10, an active layer 40 grown on the n-type III-nitride semiconductor layer 30, a p-type III-nitride semiconductor layer 50 grown on the active layer 40, a p-type III- The p-side electrode 60, the p-side electrode pad 70, the p-type III nitride semiconductor layer 50, and the active layer 40 formed on the p-side electrode 60 are formed on the n- An n-side electrode 80 formed on the n-type III-nitride semiconductor layer 30 exposed by mesa etching, and a protective film 90.

A GaN-based substrate is used as the substrate 10, and a sapphire substrate, a SiC substrate, a Si substrate, or the like is used as the different substrate. However, any substrate may be used as long as the substrate can grow a group III nitride semiconductor layer. When the SiC substrate is used, the n-side electrode 80 may be formed on the SiC substrate side.

2 is a diagram showing an example of a conventional method in which a semiconductor light emitting element is mounted on a frame 5 in which a semiconductor light emitting element is fixed to a frame 5 by an adhesive 9 such as silver paste have. The light generated in the active layer 40 partially goes out through the transparent p-side electrode 60 and the light that has entered the substrate 10 is reflected by the aluminum layer 92, Through the sides of the. The aluminum layer 92 has good reflectance, but some light is absorbed by the aluminum layer. The aluminum layer 92 is omitted, and when the adhesive body 9 is a transparent body (for example, clear paste), light is reflected by the frame 5 through the adhesive body. Also in this case, there is a light absorption loss due to the frame 92, and the clear paste has a low thermal conductivity, which is unsuitable for high current driving. The semiconductor light emitting element is a very small thickness as a compound semiconductor light emitting element and a part of the light introduced into the substrate 10 is slightly raised to the side of the substrate 10 when the light emitting element is bonded to the adhesive 9 provided on the frame 5, Can be absorbed by the adhesive 9. Even when the adhesive 9 is transparent, light is absorbed by the adhesive 9 although there is a difference in degree. Accordingly, there is a problem that the amount of light emitted from the light emitting element is reduced to lower the light extraction efficiency of the light emitting element.

3 is a view showing an example of a conventional III-nitride semiconductor light emitting device. The III-nitride semiconductor light emitting device 201 includes lead frames 210 and 220, a mold 230, an encapsulant 240, a Group III nitride semiconductor A light emitting device chip 250, and an ESD protection zener diode 260. The III nitride semiconductor light emitting device chip 250 is placed on the lead frame 210 and is electrically connected to the lead frame 210 by the wires 270 and electrically connected to the lead frame 280 by the wires 280 do. The ESD protection zener diode 260 is placed on the lead frame 220 while being conductive and electrically connected to the lead frame 210 by the wires 290.

4, an n-type III-nitride semiconductor layer 300, an active layer 400, a p-type III nitride semiconductor layer 500, and a p-type III nitride semiconductor layer 500 are formed in the same manner as the light emitting device shown in Fig. The p-side electrode 600 and the p-side bonding pad 700 are formed on the p-type III-nitride semiconductor layer 500, and the n-side III-nitride semiconductor And an n-side electrode 800 is formed in the layer 300. [ By forming the vertical light emitting element, the current spreading in the light emitting element can be more smoothly performed than the light emitting element shown in Fig.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a semiconductor light emitting device comprising: a base; A semiconductor device comprising: a plurality of semiconductor layers located on a base, the first semiconductor layer having a first conductivity, the second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer interposed between the first and second semiconductor layers A plurality of semiconductor layers each having an active layer that generates light by recombination of electrons and holes; An electrode electrically connected to the plurality of semiconductor layers to supply one of electrons and holes; A first non-conductive reflective film for reflecting light from an active layer between a base and a plurality of semiconductor layers, comprising: a first non-conductive reflective film having a plurality of layers; And a second non-conductive reflective film that reflects light that has passed through the first non-conductive reflective film between the base and the first non-conductive reflective film, wherein the second non-conductive reflective film has a plurality of layers made of a material different from that of the first non- 2 non-conductive reflective film.

This will be described later in the Specification for Implementation of the Invention.

FIG. 1 is a view showing an example of a conventional Group III nitride semiconductor light emitting device,
2 is a view showing an example of a conventional method in which the semiconductor light emitting element is mounted on the frame 5,
3 is a view showing an example of a conventional Group III nitride semiconductor light emitting device,
4 is a view showing an example of a vertical type light emitting device,
5 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure,
6 is a view for explaining a semiconductor light emitting device of a comparative example,
7 is a view for explaining a characteristic of a non-conductive reflective film according to the present disclosure,
8 is a view for explaining an example of a first non-conductive reflective film,
9 is a view for explaining an example of a second non-conductive reflective film,
10 is a view for explaining an example of the reflectance of a reflective structure combining a first non-conductive reflective film and a second non-conductive reflective film,
11A is a view for explaining another example of a non-conductive reflective film,
12 and 13 are views for explaining another example of the semiconductor light emitting device according to the present disclosure
FIGS. 14 and 15 are views showing still another example of the semiconductor light emitting device according to the present disclosure; FIG.

The present disclosure will now be described in detail with reference to the accompanying drawings.

5 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure. The semiconductor light emitting device includes a first base 123, a second base 125, a substrate 10, a plurality of semiconductor layers 30, The second electrode 70 and the first non-conductive reflective film R1, the second non-conductive reflective film R2, and the bonding layer 150 are formed on the transparent conductive film 60, the transparent conductive film 60, the first electrode 80, . In this example, the bases 123 and 125 are frames made of metal, and may be the lead frames shown in Fig. 2 or Fig. The substrate 10 is provided on the first base 123 as a growth substrate on which a plurality of semiconductor layers 30, 40, and 50 are grown. The plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity that is sequentially stacked on a substrate 10, a second semiconductor layer 50 having a second conductivity different from the first conductivity And an active layer 40 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 and generating light by recombination of electrons and holes.

The first electrode 80 is formed on the exposed first semiconductor layer 30 and supplies electrons. The transmissive conductive film 60 is formed on the second semiconductor layer 50 and the second electrode 70 is formed on the transmissive conductive film 60 to supply holes. The first non-conductive reflective film Rl is integrated with the substrate 10 between the first base 123 and the substrate 10 and reflects light passing from the active layer to the substrate 10. The first non-conductive reflective film R1 has a plurality of layers, and the first incident angle becomes a Brewster angle. The second non-conductive reflective film R 2 is integrated with the first non-conductive reflective film R 1 between the first base 123 and the first non-conductive reflective film R 1, and passes through the first non- It reflects light. The second non-conductive reflective film R2 has a plurality of layers, in which some layers are made of a material different from that of the first non-conductive reflective film R1, and a second incident angle different from the first incident angle is a Brewster's angle. The bonding layer 150 is interposed between the first base 123 and the second non-conductive reflective film R2. In this embodiment, the bonding layer 150 is made of metal, and bonds the first base 123 and the second non-conductive reflective film R 2.

According to the semiconductor light emitting device of this example, the heat dissipation efficiency is increased by bonding the semiconductor light emitting element to the base 123 such as the lead frame using the metal bonding layer 150, and the first nonconductive reflective film R1, And the light absorption by the metal bonding layer 150 is reduced by the reflective structure having the second non-conductive reflective film R2.

Hereinafter, a group III nitride semiconductor light emitting device is taken as an example, the substrate 10 is mainly made of sapphire, SiC, Si, GaN or the like, and the substrate 10 can be finally removed (in this case, (R1), and the second non-conductive reflective film (R2) may be formed under the first semiconductor layer 30). The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and they are mainly composed of GaN in the III-nitride semiconductor light emitting device.

The plurality of semiconductor layers 30, 40, and 50 may include a buffer layer formed on the substrate 10, a first semiconductor layer 30 (e.g., Si-doped GaN) having a first conductivity, A second semiconductor layer 50 (for example, Mg-doped GaN), an active layer 40 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 and generating light through recombination of electrons and holes : InGaN / (In) GaN multiple quantum well structure). Each of the plurality of semiconductor layers 30, 40, and 50 may have a multi-layer structure, and the buffer layer may be omitted.

Preferably, a light-transmitting conductive film 60 is provided on the second semiconductor layer 50. The transmissive conductive film 60 has a light-transmitting property and may be formed so as to cover the entire second semiconductor layer 50 as a whole, but may be formed only in a part thereof. In particular, in the case of p-type GaN, the current diffusion ability is lowered. When the p-type semiconductor layer 50 is made of GaN, most of the light-transmitting conductive film 60 should be supported. For example, a material such as ITO or Ni / Au may be used as the transparent conductive film 60.

6 is a view for explaining a semiconductor light emitting device of a comparative example in which a semiconductor light emitting device of a comparative example has a stacked structure of a substrate 10, a first non-conductive reflective film (R1), a bonding layer (150) I have. In the comparative example, the bonding layer 140 is a non-metal paste. A large part of light passing through the substrate 10 is reflected by the first non-conductive reflective film Rl. The bonding layer 140 may be a clear paste. In this case, since light absorption is small, a part of the light leaked to the first non-conductive reflective film Rl passes through the bonding layer 140, (E.g., Ag, Al). However, since the clear paste has a low thermal conductivity, there is a problem in heat dissipation when the semiconductor light emitting element is driven with a high current. In this example, as shown in FIG. 5, the metal bonding layer 150 having a good thermal conductivity is used to improve the heat radiation efficiency, thereby enabling high current driving. On the other hand, the light absorption loss of the metal bonding layer 150 may be larger than that of the bonding layer 140 made of a light-transmitting nonmetal. In the example shown in FIG. 5, the second non-conductive reflective film R 2 is interposed between the first non-conductive reflective film R 1 and the bonding layer 150. Therefore, part of the light transmitted through the first non-conductive reflective film Rl is reflected by the second non-conductive reflective film R2. In particular, the second non-conductive reflective film R 2 is formed such that the reflectance thereof is relatively high with respect to the light incident at the Brewster's angle of the first non-conductive reflective film R 1 with respect to the first non-conductive reflective film R 1. Therefore, the light absorption loss is reduced by the metal bonding layer 150, and the heat radiation efficiency of the metal bonding layer 150 is improved, so that high current driving becomes possible.

In this example, the plurality of layers of the first non-conductive reflective film Rl include a first material layer / second material layer laminated a plurality of times, and the plurality of layers of the second non- Wherein at least one of the third material layer and the fourth material layer comprises a material different from the first material layer and the second material layer. That is, there is a difference between the materials of the first non-conductive reflective film R1 and the second non-conductive reflective film R2, which is different from merely forming the same non-conductive reflective film doubly or additionally.

In this example, the second non-conductive reflective film R 2 is formed to have a higher reflectivity at the Brewster's angle of the first non-conductive reflective film R 1 than at another angle. Therefore, a part of the light incident on the first non-conductive reflective film R 1 can not be reflected at the first incident angle (Brewster angle) at which the reflectance of the first non-conductive reflective film R 1 is relatively low through the substrate 10, And is reflected by the second nonconductive reflective film R2 when it passes through the metallic reflective film R1. The first non-conductive reflective film Rl and the second non-conductive reflective film R2 each include any one of a distributed Bragg reflector DBR and an omni-directional reflector ODR. In general, a DBR has a plurality of layers, and the thickness of each layer must be accurately formed to maintain a high reflectance. In this example, most of the light is reflected by the first non-conductive reflective film R 1, but a large part of the light passing through the first non-conductive reflective film R 1 has a relatively high reflectance of the first non- Occurs at low incidence angles (Brewster angle). Therefore, the second non-conductive reflective film R 2 may have a reflectance at a necessary level only at an incident angle of a part of the range including the incident angle at which the reflectivity of the first non-conductive reflective film R 1 is low, As shown in FIG.

FIG. 7 is a view for explaining a characteristic of a non-conductive reflective film according to the present disclosure. Referring to FIG. 7A, when light is incident on a boundary surface between two media at a specific angle, The polarization component is totally transmitted without reflection. This specific angle is referred to as Brewster's angle (BA11). Considering the vertical polarization (S polarized light) and the horizontal polarized light (P polarized light) in FIG. 7A, when vertically polarized light and horizontally polarized light are incident on the interface at the Brewster angle, reflected waves Polarized light + S polarized light) is 90 degrees, the vertical polarized light is almost totally reflected, and the horizontally polarized light is almost not reflected, and most of the angle is transmitted. Thus, the incident angle at which the reflection coefficient of the horizontal polarization component becomes zero is the Brewster's angle. The Brewster's angle may vary depending on the physical properties of the medium. When unpolarized light (for example, light from the active layer) is incident on the first non-conductive reflective film R 1 at the Brewster angle, the vertical polarization component is almost completely reflected, and the horizontal polarization component is entirely transmitted. The reflectance is changed according to the incident angle, and the reflectance is relatively lowered at the Brewster angle (see FIG. 11B).

Referring to FIG. 7B, the first non-conductive reflective film Rl reflects light that has passed through the first semiconductor layer 30 and the substrate 10 from the active layer. The first non-conductive reflective film Rl has a plurality of layers 93a and 93b, and a first incident angle A1 (see FIG. 8) is a Brewster angle. The second non-conductive reflective film R 2 reflects light that has passed through the first non-conductive reflective film R 1. The second non-conductive reflective film R2 has a plurality of layers 95a and 95b, in which some layers are made of a material different from the first non-conductive reflective film R1, and a second incident angle A2 (see FIG. 9) .

The reflectance of the first non-conductive reflective film R1 is lowered at the first incident angle A1 (Brewster angle of the first non-conductive reflective film R1) (see FIG. 11B). The second non-conductive reflective film R 2 is formed so as to have a high reflectivity with respect to the light incident on the first non-conductive reflective film R 1 at the first incident angle A 1 and transmitted therethrough. Therefore, the leakage light decreases and the luminance of the semiconductor light emitting element rises.

Instead of the metal reflective film, the non-conductive reflective film (R1, R2) is used to reduce the light absorption loss. The non-conductive reflective films R1 and R2 preferably include a plurality of layers 93a, 93b, 95a, and 95b, including a Distributed Bragg Reflector, an Omni-Directional Reflector (ODR) The branch structure. The distribution Bragg reflector has reflectance higher near the vertical direction and reflects more than 99%. However, some of the light can pass through the distributed Bragg reflector. It is necessary to reduce the light transmitted through the nonconductive reflective films R1 and R2 in order to increase the light extraction efficiency of the semiconductor light emitting device.

Fig. 8 is a view for explaining an example of the first non-conductive reflective film R1. The first non-conductive reflective film R1 has a plurality of layers 93a and 93b as DBRs. For example, as shown in FIG. 8B, a plurality of layers 93a and 93b of the first non-conductive reflective film Rl are formed by stacking a plurality of pairs of the first material layer 93a / second material layer 93b . The first material layer 93a and the second material layer 93b may be made of different materials selected from SiO x , TiO x , Ta 2 O 5 , and MgF 2 . Of course, other materials are also possible, and it is of course possible that the first non-conductive reflective film R1 has a plurality of layers of three or more kinds. For example, the first non-conductive reflective film Rl may be formed of a first material layer 93a / a second material layer 93b pair consisting of 25 to 26 times of SiO 2 / TiO 2 , and SiO 2 and TiO 2 each have a thickness of several tens nanometers. 8B, when light is incident on the first non-conductive reflective film Rl through the substrate 10 (e.g., sapphire), the Brewster angle A1 is about 48 degrees, and at this Brewster angle The maximum reflectance of the first non-conductive reflective film R1 is about 50%. 8A shows the incident angle and the reflectance in the laminated structure of the sapphire substrate 10 and the first non-conductive reflective film Rl. The reflectance graph of Fig. 8A shows the mean (pol) of reflectance of the above-mentioned vertical polarization and horizontal polarization.

9 is a view for explaining an example of the second non-conductive reflective film R2. The second non-conductive reflective film R2 is a DBR, and at least some of the layers are made of a material different from the first non-conductive reflective film R1 And a plurality of layers 95a and 95b. The second non-conductive reflective film R 2 is designed to have a good reflectivity at the Brewster angle A1 of the first non-conductive reflective film R 1. For example, as shown in FIG. 9B, the plurality of layers 95a and 95b of the second non-conductive reflective film R2 include a third material layer 95a / a fourth material layer 95b stacked a plurality of times do. At least one of the third material layer 95a and the fourth material layer 95b is made of a material different from the first material layer 93a and the second material layer 93b of the first nonconductive reflective film R1. For example, the third material layer (95a) and a fourth material layer (95b) may be formed of a material layer different from SiO x, TiO x, Ta 2 O 5, and MgF 2 is selected. It is also possible to use other materials, and it is also conceivable that the second non-conductive reflective film R2 includes three or more kinds of layers. For example, the second non-conductive reflective film R 2 includes TiO 2 / Ta 2 O 5 deposited about 20 times as a pair of third material layer 95a / second material layer 93b, and TiO 2 and Ta 2 O 5 are each formed to have a thickness of several tens of nanometers. In this case, when light is incident on the second non-conductive reflective film R 2 through the sapphire substrate 10 as shown in FIG. 9B, the Brewster angle is about 48 degrees The reflectivity of the second non-conductive reflective film R 2 is high at the Brewster angle (for example, about 48 degrees) of the first non-conductive reflective film R 1. In this example, the second non-conductive reflective film R 2 is designed to have a good reflectance only at a certain range of angles including the Brewster's angle of the first non-conductive reflective film R 1, and may not have a good reflectance at the remaining angles. 9A shows the incident angle and reflectance in the laminated structure of the sapphire substrate 10 and the second non-conductive reflective film R 2.

Such a non-conductive reflective film can be formed by chemical vapor deposition (CVD), in particular, plasma enhanced chemical vapor deposition (PECVD). Or physical vapor deposition (PVD) such as electron beam evaporation (E-Beam Evaporation).

Fig. 10 is a view for explaining an example of the reflectance of a reflective structure combining the first non-conductive reflective film R1 and the second non-conductive reflective film R2. In the example shown in Fig. 10b, the first non- R1 may be an example described in Fig. 8, and the second non-conductive reflective film R2 may be an example described in Fig.

The light transmitted through the first non-conductive reflective film Rl through the substrate 10 is reflected by the second non-conductive reflective film R2. Referring to FIG. 11B, the vertical polarization increases as the incident angle increases. The reflectance of the horizontally polarized light is 0 in the Brewster's angle, and the reflectance of the horizontally polarized light is significantly increased when the incident angle is larger than the Brewster's angle. In this example, in order to improve the reflectance as a whole of the non-conductive reflective film of the semiconductor light emitting element, the reflectance of the second non-conductive reflective film R 2 is designed to be high at the Brewster angle at which the reflectivity of the first non-conductive reflective film R 1 is low.

10A is a diagram showing an example of the reflectance of the first non-conductive reflective film Rl combined with the second non-conductive reflective film R2. The first non-conductive reflective film Rl has a first incidence angle A1 (first non- The Brewster angle of the reflective film R1) is relatively low. Therefore, when the light passes through the substrate 10 and enters the first non-conductive reflective film R1 at the first incident angle A1, the transmitted light is relatively large. This transmitted light enters into the second non-conductive reflective film R2. Since the second non-conductive reflective film R 2 has a high reflectivity at the first incident angle A 1, the light transmitted through the first non-conductive reflective film R 1 is well reflected by the second non-conductive reflective film R 2. Therefore, the light absorption by the metal bonding layer 150 is relatively small, and the leakage light decreases in the entire nonconductive reflective films R1 and R2, and the brightness of the semiconductor light emitting device increases. The metal bonding layer 150 has a good heat radiation efficiency.

11A is a view for explaining another example of the nonconductive reflective film. It is also possible to consider an example in which the substrate 10, the second nonconductive reflective film R2, and the first nonconductive reflective film R1 are formed in this order. The reflectance of the first nonconductive reflective film R1 is high at most angles and the reflectivity of the second nonconductive reflective film R2 is high at the Brewster angle A1 of the first nonconductive reflective film R1, R1) and the second non-conductive reflective film (R2), respectively.

12 and 13 are diagrams for explaining another example of the semiconductor light emitting device according to the present disclosure. The light absorption preventing film 41 and the light absorbing conductive film 41 are formed on the second semiconductor layer 50, 60, a branch electrode 75 on the transmissive conductive film 60, a dielectric layer 91b on the branch electrode 75, a first non-conductive reflective film R1, a second non-conductive reflective film R2 on the dielectric layer 91b, A cladding layer 91c is formed on the second non-conductive reflective film R2, and a second electrode 70 is formed on the cladding layer 91c. The electrical connection 71 connects the second electrode 70 and the branch electrode 75.

In this example, the first electrode 80 is formed on the lower surface of the substrate 10. For example, a groove is formed in the substrate 10 by a laser, and a portion of the first semiconductor layer 30 is exposed due to the groove. The first electrode 80 is formed by plating or vapor deposition in the groove. The first electrode 80 extends into the groove and is electrically connected to the first semiconductor layer 30, and is formed partly on the lower surface of the substrate 10. Alternatively, the substrate 10 may be removed, the substrate 10 may be removed, and the first electrode 80 may be formed on the exposed first semiconductor layer 30. It is also conceivable to form a long groove to introduce an additional branched electrode into the first semiconductor layer 30 as well. The dielectric film 91b, and the clad film 91c may be omitted. The branched electrodes 75 may also be omitted.

The light absorption prevention film 41 may have only a function of reflecting a part or all of the light generated in the active layer 40 and may have a function of preventing current from flowing directly below the branch electrode 75, It may have all the functions. The light absorption preventing film 41 may be omitted.

In forming the semiconductor light emitting device according to this embodiment, a height difference is caused by the structure such as the branch electrode 75 and the mesa etching. In this example, the first non-conductive reflective film R1 and the second non-conductive reflective film R2 each include a distributed Bragg reflector. Therefore, by forming the dielectric film 91b having a certain thickness prior to the deposition of the distribution Bragg reflector, which requires precision, the distributed Bragg reflector can be stably manufactured, and also the reflection of light can be assisted. SiO 2 is suitable as the material of the dielectric film 91b, and its thickness is preferably 0.2 um to 1.0 um.

The first non-conductive reflective film Rl and the second non-conductive reflective film R2 reflect light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50. In the present example, the above-described examples of the first non-conductive reflective film R1 and the second non-conductive reflective film R2 can be used.

The reflectance of the first non-conductive reflective film Rl is relatively low at the Brewster angle, while the reflectivity of the second non-conductive reflective film Rl is designed to be relatively high at the Brewster angle of the first non-conductive reflective film Rl. Therefore, the reflectance of the first non-conductive reflective film R1 and the second non-conductive reflective film R2 is improved as compared with the case of using only one of them. Of course, it is also possible to consider an example in which the light-transmitting conductive film 60, the second non-conductive reflective film R2, and the first non-conductive reflective film R1 are stacked in this order.

A clad layer (91c) may be formed of a material of the dielectric, MgF, CaF, such as a metal oxide, SiO 2, SiON, such as Al 2 O 3.

According to such a semiconductor light emitting device, the light absorption loss can be reduced by using the non-conductive reflective films R1 and R2 instead of the metal reflective film. In addition, the decrease in reflectance at the Brewster angle of the first non-conductive reflective film R1 can be compensated for by the second non-conductive reflective film R2 to further reduce the light leakage loss.

Referring to FIG. 13, such a semiconductor light emitting device is bonded to the first base 123. The second electrode 70 may be bonded (eutectic bonding) to the first base 123, for example. If the area of the metal layer (for example, the second electrode 70) covering the second non-conductive reflective film R2 is wide, the light absorption by the metal may increase, which is not preferable. Therefore, as shown in Fig. 13, it is preferable that the second electrode 70 covers only a part of the second non-conductive reflective film R2. The bonding layers 140 and 150 may be formed between the first base 123 and the second nonconductive reflective layer R2 in addition to the second electrode 70. The bonding layers 140 and 150 may be either metallic or non- . And may be eutectic-bonded to the first base 123 using the metal bonding layer 150. The metal bonding layer 150 improves the heat radiation efficiency and is preferable for high current driving. Meanwhile, the first electrode 80 is electrically connected to the second base 125 through wire 105 bonding.

14 and 15 illustrate another example of the semiconductor light emitting device according to the present invention. As shown in FIG. 14, a second semiconductor layer 50 is formed and mesa-etched to form a first semiconductor layer 30, . A hole is formed in the exposed first semiconductor layer 30 using a laser. Thereafter, the first electrode 80 is formed on the exposed first semiconductor layer 30. The first electrode 80 is formed through the hole 81 and extends to the lower surface of the substrate 10. Thereafter, the light-transmitting conductive film 60 is formed on the second semiconductor layer 50 to form the first non-conductive reflective film R1 and the second non-conductive reflective film R2. Thereafter, an opening is formed in the first non-conductive reflective film R1 and the second non-conductive reflective film R2, and an electrical connection portion 71 is formed in the opening. The second electrode 70 is formed on the second non-conductive reflective film R2 together with the electrical connection or separately.

15, the second electrode 70 is bonded to the first base 123, and the bonding layers 140 and 150 may be interposed between the first base 123 and the second non-conductive reflective film R2. have. The bonding layers 140 and 150 may be eutectic bonding metals or may be materials with low light absorption such as clear paste. The first electrode 80 is electrically connected to the second base 125 by wire 105 bonding.

The amount of light reaching the bonding layer 150 due to the reflective structure is very small due to the first and second nonconductive reflective films Rl and R2 so that the bonding layer 150 can be formed without increasing the light absorption loss. The thermal efficiency is improved as compared with the non-metallic bonding layer 140, and the bonding layer 150 made of a metal together with the second electrode 70 can be used for the eutectic bonding.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting device comprising: a base; A semiconductor device comprising: a plurality of semiconductor layers located on a base, the first semiconductor layer having a first conductivity, the second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer interposed between the first and second semiconductor layers A plurality of semiconductor layers each having an active layer that generates light by recombination of electrons and holes; An electrode electrically connected to the plurality of semiconductor layers to supply one of electrons and holes; A first non-conductive reflective film for reflecting light from an active layer between a base and a plurality of semiconductor layers, comprising: a first non-conductive reflective film having a plurality of layers; And a second non-conductive reflective film that reflects light that has passed through the first non-conductive reflective film between the base and the first non-conductive reflective film, wherein the second non-conductive reflective film has a plurality of layers made of a material different from that of the first non- 2 < / RTI > non-conductive reflective film.

(2) a substrate on which a plurality of semiconductor layers are grown between the plurality of semiconductor layers and the first non-conductive reflective film, wherein the first non-conductive reflective film is integrated with the substrate, and the second non- Wherein the semiconductor light emitting device is integrated with the semiconductor light emitting device.

(3) A bonding layer interposed between the base and the second non-conductive reflective film.

(4) The semiconductor light emitting device according to any one of (1) to (4), wherein the base is a metal frame and the bonding layer is made of metal.

(5) The semiconductor light emitting device according to (5), wherein the reflectivity of the second non-conductive reflective film is higher at the Brewster's angle of the first non-conductive reflective film than at other angles.

(6) The semiconductor light emitting device according to (6), wherein the first non-conductive reflective film and the second non-conductive reflective film each include any one of a distributed Bragg reflector (DBR) and an omni-directional reflector (ODR).

(7) A plurality of layers of the first non-conductive reflective film include a plurality of layers of the first material layer / second material layer laminated a plurality of times, and a plurality of layers of the second non- 4 material layer, and at least one of the third material layer and the fourth material layer is made of a material different from the first material layer and the second material layer.

8, the first material layers and second material layers are SiO 2, TiO 2, Ta 2 O 2, HfO, ZrO, and one is selected of different materials SiN, a third layer of material and the fourth material layer is TiO 2 , Ta 2 O 5 , HfO, ZrO, and SiN.

(9) The first insulating reflective layer may be formed of a first material layer / a second material layer pair such as SiO 2 / TiO 2 , and the second insulating reflective layer comprises TiO 2 / Ta 2 O 5 as the third material layer / fourth material layer pair.

(10) A semiconductor light emitting device comprising: an additional electrode for supplying electrons and holes to the rest; (Second electrode or p-side electrode) is wire-bonded to the base, and the additional electrode (first electrode or n-side electrode) is connected to the additional base and wire Wherein the first semiconductor layer and the second semiconductor layer are bonded to each other.

(11) a substrate positioned on the opposite side of the first non-conductive reflective film with respect to the plurality of semiconductor layers; An additional electrode passing through the substrate to supply the remaining one of electrons and holes to the first semiconductor layer; And an additional base (second base) electrically separated from the base, wherein the electrode (second electrode) is integrally formed with the second non-conductive reflective film between the base and the second non-conductive reflective film, , The first non-conductive reflective film and the second non-conductive reflective film, and is electrically connected to the second semiconductor layer, and the additional electrode is wire-bonded to the additional base (second base).

According to the semiconductor light emitting device of the present disclosure, a light absorption loss is reduced and a semiconductor light emitting device suitable for high current driving is provided.

10: substrate 30: first semiconductor layer 40: active layer 50: second semiconductor layer
R1: first non-conductive reflective film R2: second non-conductive reflective film 70: second electrode
80: first electrode 123: first base 125: second base
103, 105: wire bonding 140: clear paste 150: metal bonding layer

Claims (11)

In the semiconductor light emitting device,
Base;
A semiconductor device comprising: a plurality of semiconductor layers located on a base, the first semiconductor layer having a first conductivity, the second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer interposed between the first and second semiconductor layers A plurality of semiconductor layers each having an active layer that generates light by recombination of electrons and holes;
An electrode electrically connected to the plurality of semiconductor layers to supply one of electrons and holes;
A first non-conductive reflective film for reflecting light from an active layer between a base and a plurality of semiconductor layers, comprising: a first non-conductive reflective film having a plurality of layers; And
And a second non-conductive reflective film that reflects light that has passed through the first non-conductive reflective film between the base and the first non-conductive reflective film, wherein the second non-conductive reflective film has a plurality of layers, And a non-conductive reflective film,
Wherein the second non-conductive reflective film has a higher reflectivity at the Brewster's angle of the first non-conductive reflective film than at other angles. The method according to claim 1,
And a substrate on which a plurality of semiconductor layers are grown between the plurality of semiconductor layers and the first non-conductive reflective film,
Wherein the first non-conductive reflective film is integrated with the substrate, and the second non-conductive reflective film is integrated with the first non-conductive reflective film. The method according to claim 1,
And a bonding layer interposed between the base and the second non-conductive reflective film. The method of claim 3,
The base is a metal frame,
Wherein the bonding layer is made of a metal. delete The method according to claim 1,
Wherein the first non-conductive reflective film and the second non-conductive reflective film each include any one of a distributed Bragg reflector (DBR) and an omni-directional reflector (ODR). The method according to claim 1,
Wherein the plurality of layers of the first non-conductive reflective film comprise a first material layer / second material layer laminated a plurality of times,
The plurality of layers of the second non-conductive reflective film include a plurality of layers of a third material layer / a fourth material layer,
Wherein at least one of the third material layer and the fourth material layer is made of a material different from the first material layer and the second material layer. The method of claim 7,
A first material layer and the second material layer is SiO 2, TiO 2, Ta 2 O 2, HfO, and selection of different materials of ZrO, and SiN,
A third layer of material and the fourth material layer is a semiconductor light emitting device characterized in that the selection of different materials of TiO 2, Ta 2 O 5, HfO, ZrO, and SiN. The method of claim 7,
A first and a non-conductive reflective film comprises SiO 2 / TiO 2 as a first material layer / second layer material pair,
And the second non-conductive reflective film comprises TiO 2 / Ta 2 O 5 as a pair of third material layer / fourth material layer. The method of claim 2,
An additional electrode conducting with the etched and exposed first semiconductor layer to supply the remaining one of electrons and holes; And
And an additional base electrically separated from the base,
The electrode is in electrical communication with the second semiconductor layer and is wire bonded with the base and one of the additional bases,
Wherein the additional electrode is wire-bonded with the other of the base and the additional base. The method according to claim 1,
A substrate positioned opposite to the first non-conductive reflective film with respect to the plurality of semiconductor layers;
An additional electrode passing through the substrate to supply the remaining one of electrons and holes to the first semiconductor layer; And
And an additional base electrically separated from the base,
The electrode is formed integrally with the second non-conductive reflective film between the base and the second non-conductive reflective film and is joined to the base, and is electrically continuous with the second semiconductor layer through the first non-conductive reflective film and the second non-
And the additional electrode is wire-bonded to an additional base.
KR1020150086786A 2015-04-03 2015-06-18 Semiconductor light emitting device KR101683683B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020150086786A KR101683683B1 (en) 2015-06-18 2015-06-18 Semiconductor light emitting device
PCT/KR2016/003475 WO2016159744A1 (en) 2015-04-03 2016-04-04 Semiconductor light emitting device
US15/563,273 US10158047B2 (en) 2015-04-03 2016-04-04 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150086786A KR101683683B1 (en) 2015-06-18 2015-06-18 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
KR101683683B1 true KR101683683B1 (en) 2016-12-09

Family

ID=57574434

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150086786A KR101683683B1 (en) 2015-04-03 2015-06-18 Semiconductor light emitting device

Country Status (1)

Country Link
KR (1) KR101683683B1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110085961A (en) * 2011-07-08 2011-07-27 서울옵토디바이스주식회사 Light emitting diode chip and light emitting diode package each having distributed bragg reflector
KR20110105936A (en) * 2010-03-22 2011-09-28 엘지이노텍 주식회사 Light emitting device, method for fabricating the same and light emitting device package
KR20140031732A (en) * 2012-09-05 2014-03-13 주식회사 세미콘라이트 Semiconductor light emimitting device
KR20150062352A (en) * 2013-11-29 2015-06-08 일진엘이디(주) Light emitting diode having dielectric layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110105936A (en) * 2010-03-22 2011-09-28 엘지이노텍 주식회사 Light emitting device, method for fabricating the same and light emitting device package
KR20110085961A (en) * 2011-07-08 2011-07-27 서울옵토디바이스주식회사 Light emitting diode chip and light emitting diode package each having distributed bragg reflector
KR20140031732A (en) * 2012-09-05 2014-03-13 주식회사 세미콘라이트 Semiconductor light emimitting device
KR20150062352A (en) * 2013-11-29 2015-06-08 일진엘이디(주) Light emitting diode having dielectric layer

Similar Documents

Publication Publication Date Title
JP4976849B2 (en) Semiconductor light emitting device
US10177281B2 (en) Light-emitting diode
JP5633477B2 (en) Light emitting element
KR100887139B1 (en) Nitride semiconductor light emitting device and method of manufacturing the same
JP5494005B2 (en) Semiconductor light emitting device
US20070102692A1 (en) Semiconductor light emitting device
JP5258853B2 (en) Semiconductor light emitting device and manufacturing method thereof
JP2005026395A (en) Semiconductor light emitting element and semiconductor light emitting device
US8711892B2 (en) Nitride semiconductor laser device
KR20140028964A (en) Semiconductor light emitting device having with excellent light emitting distribution
KR101753750B1 (en) Semiconductor light emitting device
KR101489375B1 (en) Semiconductor light emimitting device
KR101478761B1 (en) Semiconductor light emimitting device
KR101928309B1 (en) Semiconductor light emitting device manufacturing method
JP5557648B2 (en) Light emitting diode, light emitting diode lamp, and lighting device
KR101683683B1 (en) Semiconductor light emitting device
KR20160035102A (en) Semiconductor light emitting device
KR101643688B1 (en) Semiconductor light emitting device
KR101697960B1 (en) Semiconductor light emitting device
WO2010092741A1 (en) Light-emitting diode, and light-emitting diode lamp
JP5468158B2 (en) Semiconductor light emitting device and manufacturing method thereof
US20240186468A1 (en) Light emitting diode package
KR101640191B1 (en) Semiconductor light emitting device
KR101635908B1 (en) Semiconductor light emitting device
KR20160073366A (en) Semiconductor light emitting device

Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20190925

Year of fee payment: 4