KR20160031406A - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

The present invention relates to an organic light-emitting display device to form an auxiliary electrode on an over-coating layer to improve an aperture rate. According to an embodiment of the present invention, the organic light-emitting display device comprises: a first over-coating layer placed on an operation transistor and a power electrode to include first and second contact holes; a coupling electrode placed on the first over-coating layer to be coupled to the power electrode through the first contact hole; a first electrode placed on the first over-coating layer to be coupled to the operation transistor through the second contact hole; a second over-coating layer placed on the first over-coating layer to cover the first and second contact holes and not cover a portion of the first electrode; and the auxiliary electrode placed on the second over-coating layer to be coupled to the coupling electrode.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display and a method of manufacturing the same, and more particularly, to an organic light emitting display having an auxiliary electrode formed on an overcoating layer and a method of manufacturing the same.

2. Description of the Related Art Recently, with the development of the information society, the importance of a flat panel display (FPD) having excellent characteristics such as thinning, light weight, and low power consumption has been increasing. 2. Description of the Related Art Flat panel displays include a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting display (OLED) EPD: Electrophoretic Display) is widely used.

Particularly, the organic light emitting diode (OLED) is a self-luminous element, and has lower power consumption than other display devices, has a high response speed, a high luminous display rate, a high luminance and a wide viewing angle. have.

1 is a cross-sectional view illustrating a conventional organic light emitting diode display.

1, a conventional OLED display includes a driving transistor (not shown), a power connection electrode 17, a first flat film 21, a first lower auxiliary electrode 31, Electrode (32). A driving transistor (not shown) is formed on the substrate 10. The power connection electrode 17 is formed in the same layer as the source / drain electrode 15 of the driving transistor. The first planarization film 21 is formed on the source / drain electrode 15 and the power connection electrode 17. The first lower auxiliary electrode 31 is formed on the first flat film 21 and connected to the source / drain electrode 15. The second lower auxiliary electrode 32 is formed on the first flat film 21 and connected to the power connection electrode 17.

In addition, the conventional organic light emitting display includes a second flat film 22, an anode 41, and an upper auxiliary electrode 47. The second flat film 22 is formed on the first lower auxiliary electrode 31 and the second lower auxiliary electrode 32. The anode 41 is formed on the second flat film 22 and connected to the first lower auxiliary electrode 31. The upper auxiliary electrode 47 is formed on the same layer as the anode 41.

The conventional organic light emitting display includes a bank 25, a bank 50, an organic light emitting layer 42, and a cathode 43. The bank 25 separates the upper auxiliary electrode 47 from the anode 41. [ A partition is formed on the upper auxiliary electrode (47). An organic light emitting layer 42 is formed on the anode 41. A cathode 43 is formed on the entire surface of the substrate 10. The cathode 43 is electrically connected to the upper auxiliary electrode 47.

As described above, in the conventional organic light emitting diode display, the first flat film 21 and the second flat film 22 are formed to lower the resistance of the top auxiliary electrode 47, and the first flat film 21 And the second auxiliary electrodes 31 and 32 are provided between the first and second planar films 22 and 22, respectively.

Further, the upper auxiliary electrode 47 is formed on the same layer as the anode 41. At this time, since the width of the anode can be reduced, the pixel area can be reduced. Therefore, the aperture ratio of the organic light emitting display device can be reduced. Further, the image quality and lifetime of the organic light emitting display device can be reduced.

An object of the present invention is to provide an organic light emitting display in which an auxiliary electrode is formed on an overcoat layer to improve an aperture ratio and an image quality and a lifetime. It is also an object of the present invention to provide an organic light emitting display device capable of reducing the number of masks in a process, simplifying a manufacturing process, and reducing manufacturing cost.

Other features and advantages of the invention will be set forth in the description which follows, or may be obvious to those skilled in the art from the description and the claims.

An organic light emitting display according to an exemplary embodiment of the present invention includes a first overcoating layer having a first contact hole and a second contact hole, the first overcoating layer being located on the driving transistor and the power electrode, A connection electrode connected to the power supply electrode through the first contact hole, a first electrode on the first overcoat layer and connected to the driving transistor through the second contact hole, A second overcoating layer overlying the first contact hole and the second contact hole and not covering a portion of the first electrode, a second overcoat layer overlying the second overcoat layer, Electrode.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display, comprising: forming a first flat layer on a driving transistor and a power supply electrode; forming, on the first flat layer, Forming a second flat film covering the first electrode and the connection electrode, forming an auxiliary electrode connected to the connection electrode on the second flat film, forming a connection electrode connected to the power electrode, Etching the specific region of the second planarizing film to expose at least a portion of the first electrode.

The OLED display according to an embodiment of the present invention includes a first overcoating layer, a second overcoating layer disposed on the first overcoating layer, and an anode disposed on the first overcoating layer, The anode includes a first overcoating layer on which the anode is disposed and an auxiliary electrode on the second overcoating layer, and a top emission type top emission type).

According to the embodiment of the present invention, since the auxiliary electrode is formed on the bank, the pixel area can be increased and the aperture ratio can be improved. Further, according to the embodiment of the present invention, luminance uniformity and lifetime of the organic light emitting display device can be improved. Further, according to the embodiment of the present invention, the number of masks used in the manufacturing process can be reduced, so that the manufacturing process of the display panel can be simplified, and the manufacturing cost of the display panel can be lowered accordingly.

1 is a sectional view showing a conventional organic light emitting display device.
2 is a plan view showing an organic light emitting display according to an embodiment of the present invention.
3 is a cross-sectional view illustrating an organic light emitting diode display according to one embodiment of the present invention.
4 is a cross-sectional view illustrating an OLED display according to another embodiment of the present invention.
5A to 5G are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

2 is a plan view showing an organic light emitting display according to an embodiment of the present invention.

A display panel according to an embodiment of the present invention may be applied to the organic light emitting display.

2, the OLED display includes a display panel 100, a gate driver 200, a data driver 300, and a timing controller 400. In the display panel 100, a sub-pixel P is formed for each intersection region of the gate lines GL1 to GLg and the data lines DL1 to DLd. At this time, the sub-pixel P may be defined by means other than the crossing regions of the gate lines GL1 to GLg and the data lines DL1 to DLd. The gate driver 200 supplies a gate signal to the gate lines GL1 to GLg formed on the display panel 100. [ The data driver 300 supplies data signals to the data lines DL1 to DLd formed on the display panel 100. [ The timing controller 400 controls the functions of the gate driver 200 and the data driver 300.

Each sub-pixel P includes an organic light emitting diode for outputting light and a driving circuit for driving the organic light emitting diode.

The organic light emitting diode includes an anode, an organic light emitting layer (Orgnic compound layer), and a cathode (Cathode). The anode is connected to a transistor (TFT). A sealing portion is formed at the top of the cathode.

The top emission type in which the direction of light emitted from the organic emission layer is the direction from the bottom substrate (the array substrate) to the top substrate or the direction of the light emitted from the organic emission layer is a direction from the top substrate to the bottom substrate (Array substrate) direction. The organic light emitting diode outputs light having a predetermined luminance corresponding to the current supplied from the driving transistor.

The anode of the organic light emitting diode (OLED) is electrically connected to a first power source (not shown). The cathode is commonly connected to the second power source 500 through the auxiliary electrode, which will be described below. At this time, the auxiliary electrode is electrically connected to the power supply electrode 151 through a connection electrode (not shown) formed under the auxiliary electrode. Therefore, the power supply electrodes 151 associated with the respective sub-pixels P are commonly connected to the second power supply 500 through the power supply electrode line 155.

The driving circuit is electrically connected to the data line DL and the gate line GL to control driving of the organic light emitting diode OLED. At this time, the driving circuit may include the driving transistor, the switching transistor, and the storage capacitor, but the present invention is not limited thereto. The driving circuit controls an amount of current supplied to the organic light emitting diode OLED according to a data signal supplied to the data line DL when a gate signal is supplied to the gate line GL.

At this time, the driving transistor is electrically connected between the first power source and the organic light emitting diode. The switching transistor is electrically connected between the driving transistor, the data line DL and the gate line GL.

3 is a cross-sectional view illustrating an organic light emitting display according to an embodiment of the present invention.

3, the OLED display includes a driving transistor Tdr, a power supply electrode 151, a first overcoating layer 161, a first electrode 171, a connection electrode 152, A second overcoating layer 165, an auxiliary electrode 153, a barrier rib 180, an organic light emitting layer 175, and a second electrode 172.

The driving transistor Tdr including the first driving electrode 141 is located on the substrate 110. The power supply electrode 151 is located on the same layer as the first driving electrode 141 of the driving transistor Tdr.

The first overcoating layer 161 is located on the driving transistor Tdr and the power supply electrode 151. [ The first electrode 171 connected to the first driving electrode 141 is located on the first overcoat layer 161. The connection electrode 152 connected to the power supply electrode 151 is located on the first overcoat layer 161. Therefore, the first electrode 171 and the connection electrode 152 may be located on the same layer.

The second overcoat layer 165 is located on the first overcoat layer 161. At this time, the second overcoat layer 165 insulates the first electrode 171 from the connection electrode 152 and covers the upper surface of the connection electrode 152.

The auxiliary electrode 153 connected to the connection electrode 152 is located on the second overcoat layer 165. The barrier ribs 180 are located on the auxiliary electrode 153.

The organic light emitting layer 175 is disposed on the first electrode 171. The second electrode 172 is located on the organic light emitting layer 175. At this time, the second electrode 172 is electrically connected to the auxiliary electrode 153.

The driving transistor Tdr includes a gate electrode 120, an active 130, a first driving electrode 141, and a second driving electrode 142. Here, the first driving electrode 141 may be a source electrode and the second driving electrode 142 may be a drain electrode. In contrast, the first driving electrode 141 may be a drain electrode and the second driving electrode 142 may be a source electrode.

The gate electrode 120 is located on the substrate 110. The gate insulating film 111 is located on the gate electrode 120. The active layer 130 is located on the gate insulating layer 111. At this time, the active layer 130 overlaps the gate electrode 120. An interlayer insulating layer 112 is formed on the active layer 130. The first driving electrode 141 and the second driving electrode 142 are located on the interlayer insulating film 112. At this time, the first driving electrode 141 and the second driving electrode 142 are electrically connected to the active 130.

The driving transistor Tdr may be disposed on the substrate 110 for each sub-pixel. The configuration of the driving transistor Tdr is not limited to the above-described example, and can be variously modified to a known configuration that can be easily practiced by those skilled in the art.

The power supply electrode 151 is located on the interlayer insulating film 112. At this time, the power supply electrode 151 is spaced apart from the first driving electrode 141 and the second driving electrode 142. Therefore, the power supply electrode 151 is located on the same layer as the first driving electrode 141 and the second driving electrode 142. The power source electrode 151 may be formed through the same process as the first driving electrode 141 and the second driving electrode 142 and may be formed of the same material but is not limited thereto.

The power supply electrode 151 may be electrically connected to the cathode 172 through the connection electrode 152 and the auxiliary electrode 153. At this time, the power supply electrode 151 may apply the same voltage to the cathode 172 through the connection electrode 152 and the auxiliary electrode 153.

The protective layer 113 is located on the driving transistor Tdr. The passivation layer 113 includes a first contact hole 131 and a second contact hole 132. The protective layer 113 protects the driving transistor Tdr and the power supply electrode.

The first overcoat layer 161 is located on the protective layer 113. The first overcoating layer 161 includes a first contact hole 131 and a second contact hole 132 in the same manner as the protective layer 113. The first driving electrode 141 is connected to the first electrode 171 through the first contact hole 131 and the power electrode 151 is connected to the connection electrode 141 through the second contact hole 132. [ Lt; / RTI > The first overcoating layer 161 flattens the upper portion of the driving transistor Tdr. The first overcoating layer 161 may be formed of, for example, a polyacrylate resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin polyimide resin, polyimide resin, unsaturated polyesters resin, poly-phenylenethers resin, polyphenylenesulfides resin, and benzocyclobutene. But is not limited thereto.

The first electrode (171) is located on the first overcoat layer (161). At this time, the first electrode 171 is electrically connected to the first driving electrode 141 through the first contact hole 131. The first electrode 171 may serve as an anode or a cathode according to the type of the driving transistor Tdr. For example, the first electrode 171 performs an anode function of the organic light emitting diode 170, and may be a transparent conductive material having a relatively large work function value. For example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). In addition, the first electrode 171 may be a metal material having excellent reflection efficiency. For example, the first electrode 171 may be composed of at least two layers including aluminum (Al), silver (Ag), Ag (Pb), and the like.

The connection electrode 152 is located on the first overcoat layer 161. That is, the connection electrode 152 may be located on the same layer as the first electrode 171. At this time, the connection electrode 152 is spaced apart from the first electrode 171. The connection electrode 152 is electrically connected to the power supply electrode 151 through the second contact hole 132. The connection electrode 152 may be formed through the same process as the first electrode 171. At this time, the connection electrode 152 and the first electrode 171 may be formed of the same material, but the present invention is not limited thereto.

A second overcoating layer 165 is disposed on the connection electrode 152 and the first electrode 171. The second overcoating layer 165 is on the first overcoating layer 161 and the first contact hole 131 and the second contact hole 132 included in the first overcoat layer 161 ). Also, the second overcoating layer 165 covers a part of the first electrode 171 and does not cover the other part. An organic light emitting layer 175 is disposed on the first electrode 171 that is not covered by the second overcoating layer 165. The second overcoat layer 165 covers the upper surface of the connection electrode 152. At this time, the second overcoating layer 165 includes a third contact hole 133. Therefore, the connection electrode 152 is electrically connected to the auxiliary electrode 153 through the third contact hole 133. The second overcoat layer 165 covers a part of the first electrode 171 and the upper surface of the connection electrode 152. The second overcoating layer 165 separates two adjacent sub-pixels. At this time, the width of the lower surface of the second overcoating layer 165 that separates the two sub-pixels may be larger than the width of the upper surface. That is, the second overcoating layer 165 may have a tapered side surface. The second overcoating layer 165 may be formed by dry etching. The dry etching refers to an etching process using a reaction with a gas plasma without using a chemical. The second overcoating layer 165 may be formed of the same material as the first overcoating layer 161, but is not limited thereto.

An auxiliary electrode 153 is positioned on the second overcoat layer 165. At this time, the auxiliary electrode 153 is electrically connected to the connection electrode 152 through the third contact hole 133. The auxiliary electrode 153 may be formed to cover the upper surface of the second overcoat layer 165. At this time, the width of the auxiliary electrode 153 may be equal to the width of the upper surface of the second overcoat layer 165, but is not limited thereto.

As described above, the auxiliary electrode 153 is located on the second overcoating layer 165 and not on the same layer as the first electrode 171. Accordingly, the auxiliary electrode 153 and the first electrode 171 are overlapped with each other with at least a part of the second overcoating layer 165 interposed therebetween. Therefore, the width of the first electrode 171 may be wider than that of the auxiliary electrode and the first electrode on the same layer. Therefore, the opening width of the first electrode 171 can be made wider than when the auxiliary electrode and the first electrode are located on the same overcoat layer. The aperture width means the width of a portion of the first electrode 171 that is not covered by the second overcoating layer 165 in one sub-pixel. For example, the aperture width can be widened to a maximum of 8 mu m when the auxiliary electrode and the first electrode are located on the same overcoat layer in one sub-pixel. Thus, if the aperture width is widened, the aperture ratio of the sub-pixels can be improved. For example, the aperture ratio can be increased up to 90.7% higher than when the auxiliary electrode and the first electrode are located on the same overcoat layer in one sub-pixel. The aperture width and the aperture ratio are numerical values that can be changed according to the design. Further, as the aperture ratio is improved, the image quality and lifetime of the organic light emitting display device can be improved. The auxiliary electrode 153 is electrically connected to the second electrode 172. At this time, the auxiliary electrode 153 may apply the same voltage to the second electrodes 172. Therefore, the luminance uniformity of the organic light emitting display device can be improved.

The barrier rib 180 is located on the auxiliary electrode 153. At this time, the barrier rib 180 may contact the upper surface of the auxiliary electrode 153. The barrier rib 180 may have a reverse tapered structure in which the width of the lower surface of the barrier rib 180 is narrower than the width of the upper surface. The opposite tapered structure is such that both sides of the barrier rib 180 are inclined so as to be symmetrical with respect to the center line and the width of the lower surface of the barrier rib 180 is narrower than the width of the upper surface. The side surface of the barrier rib 180 may have one inclined surface, but is not limited thereto and may have two or more inclined surfaces.

The organic light emitting layer 175 is disposed on the first electrode 171. The organic light emitting layer 175 is disposed on the first electrode 171 not covered by the second overcoating layer 165. Accordingly, the organic light emitting layer 175 may not overlap the second overcoating layer 165 and the auxiliary electrode 153. The organic light emitting layer 175 may have a structure of a hole transporting layer / light emitting layer / electron transporting layer or a structure of a hole injecting layer / a hole transporting layer / a light emitting layer / an electron transporting layer / an electron injecting layer. Further, the organic light emitting layer 175 may further include or exclude a functional layer for improving light emitting efficiency and / or lifetime of the light emitting layer. At least one of the layers in the structure of the organic light emitting layer may include the function of another layer. Therefore, at least one layer can be removed or added, so the structure of the organic light emitting layer is not limited thereto.

The organic light emitting layer 175 may be disposed on the first electrode 171, the barrier rib 180, and the auxiliary electrode 153. At this time, the organic light emitting layer 175 may not be located around the region where the barrier rib 180 contacts the auxiliary electrode 153. Therefore, the organic light emitting layers 175 formed on each of the two sub-pixels adjacent to the second overcoating layer 165 may be separated by the barrier ribs 165. [ This is merely an example, and the organic light emitting layers 175 formed on each of the two sub-pixels adjacent to the second overcoating layer 165 may be connected to each other.

The second electrode 172 may be formed on the entire surface of the substrate 110 including the organic light emitting layer 175. At this time, the second electrode 172 may be located on the organic light emitting layer 175 and may overlap the first electrode 171 and the auxiliary electrode 153. Accordingly, the second electrode 172 is electrically connected to the auxiliary electrode 153. When the first electrode 171 serves as an anode electrode, the second electrode 172 serves as a cathode electrode. As the second electrode 172, a very thin and low work function metallic material may be used. For example, the second electrode 172 may be formed of a metallic material such as silver (Ag), titanium (Ti), aluminum (Al), molybdenum (Mo), or an alloy of silver (Ag) Can be used. At this time, the metallic materials may be formed to a thickness of several hundreds of angstroms (A) or less, for example, 200 angstroms or less and used as the second electrode 172. Accordingly, the second electrode 172 becomes a semi-transparent layer and can be used as a substantially transparent cathode. However, the present invention is not limited thereto, and carbon nanotubes and graphene may be used for the second electrode 172. In order to lower the resistance of the second electrode 172, a material having a high transmittance such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) Can be additionally deposited. The second electrode 172 may not be located in a part of the peripheral portion of the contact region of the auxiliary electrode 153 contacting the barrier ribs 180. [ In addition, the second electrode 172 may be positioned on the upper surface of the barrier rib 180 having an inverted taper shape. This is merely an example, and the second electrode 172 may cover the side of the barrier rib 180.

The organic light emitting diode 170 includes a first electrode 171, an organic light emitting layer 175 and a second electrode 172 as described above and is emitted by the driving transistor Tdr.

4 is a cross-sectional view illustrating an OLED display according to another embodiment of the present invention. In describing the present embodiment, description of the same or corresponding elements to those of the previous embodiment will be omitted. Hereinafter, an OLED display according to another embodiment of the present invention will be described with reference to the drawings.

4, the OLED display includes a driving transistor Tdr, a power supply electrode 151, a first overcoating layer 161, a first electrode 171, a second overcoating layer 165, An auxiliary electrode 153, a barrier rib 180, an organic emission layer 175, and a second electrode 172. This is the same as the components of the organic light emitting display device described with reference to FIG. Therefore, the description of the overlapping components described with reference to FIG. 3 will be omitted.

Referring to FIG. 4, the organic light emitting display includes no connection electrode 152. Therefore, the power supply electrode 151 and the auxiliary electrode 153 are directly connected.

The first overcoat layer 161 is located on the protective layer 113. And a second overcoat layer 165 is located on the first overcoat layer 165. [ The first overcoating layer 161 and the second overcoating layer 165 include a fourth contact hole 134. At this time, after the first overcoating layer 161 and the second overcoating layer 165 are formed, a fourth contact hole 134 is formed together. Accordingly, the first overcoating layer 161 and the second overcoating layer 165 include a fourth contact hole 134 together.

An auxiliary electrode 153 is positioned on the second overcoat layer 165. At this time, the auxiliary electrode 153 is directly electrically connected to the power supply electrode 151 through the fourth contact hole 134. The auxiliary electrode 153 may be formed to cover the upper surface of the second overcoat layer 165. At this time, the width of the auxiliary electrode 153 may be equal to the width of the upper surface of the second overcoat layer 165, but is not limited thereto.

The auxiliary electrode 153 and the power supply electrode 151 are directly electrically connected to each other without forming the connection electrode 152 as described above so that the width of the auxiliary electrode 153 and the width of the second over- The width of the coating layer 165 can be reduced. Accordingly, the width of the first electrode 171 may be wider, and the width of the opening of the first electrode 171 may be wider. Thus, the aperture ratio in the sub-pixel can be improved. Further, as the aperture ratio is improved, the image quality and lifetime of the organic light emitting display device can be improved.

5A to 5G are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention. In particular, a cross-sectional view of each step of the method of manufacturing an organic light emitting display device according to the present invention is shown.

5A, the driving transistor including the gate electrode 120, the active layer 130, the first driving electrode 141, and the second driving electrode 142 is formed on the substrate 110, Tdr) are formed. At this time, a gate insulating layer 111 is formed on the gate electrode 120, and the active layer 130 is formed on the gate insulating layer 111. An interlayer insulating layer 112 is formed on the active layer 130.

A gate electrode 120 is formed on the substrate 110. The gate electrode 120 may be formed of one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, And alloys thereof, but it is not limited thereto, and may be formed of various materials. In addition, the gate electrode 120 may be a single layer or a multi-layer.

A gate insulating film 111 is formed on the gate electrode 120. The gate insulating layer 111 functions to insulate the active layer 130 and the gate electrode 120, which will be formed later. At this time, the gate insulating layer 111 may be formed of a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

The active layer 130 is formed on the gate insulating layer 111. The active layer 130 may be formed of amorphous silicon, polycrystalline silicon, or an oxide semiconductor.

An interlayer insulating film 112 is formed on the active layer 130. At this time, the interlayer insulating layer 112 may be formed of the same material as the gate insulating layer 111, but is not limited thereto.

The first driving electrode 141 and the second driving electrode 142 are formed on the interlayer insulating film 112. The first driving electrode 141 and the second driving electrode 142 may be formed of a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium Nd, and Cu, or an alloy thereof. However, the present invention is not limited thereto and may be formed of various materials. In addition, the first driving electrode 141 and the second driving electrode 142 may be a single layer or a multi-layer. At this time, the power supply electrode 151 is formed on the interlayer insulating layer 112 so as to be spaced apart from the first driving electrode 141 and the second driving electrode 142. The power supply electrode 151 is formed on the same layer as the first driving electrode 141 and the second driving electrode 142. The power source electrode 151 may be formed through the same process as the first driving electrode 141 and the second driving electrode 142, and may be formed of the same material, but is not limited thereto.

The power supply electrode 151 may be electrically connected to the cathode 172 through the connection electrode 152 and the auxiliary electrode 153. At this time, the power supply electrode 151 may apply the same voltage to the cathode 172 through the connection electrode 152 and the auxiliary electrode 153.

The driving transistor Tdr may be disposed on the substrate 110 for each sub-pixel. Further, the structure of the driving transistor Tdr is not limited to the above-described example, and can be variously modified so that those skilled in the art can easily implement it.

Next, as shown in FIG. 5B, a protective layer 113 is formed on the driving transistor Tdr. The protective layer 113 includes a first contact hole 131 and a second contact hole 132. The first driving electrode 141 of the driving transistor Tdr is connected to the first electrode 171 through the first contact hole 131 and the power electrode 151 is electrically connected to the second contact hole 132 to the connection electrode 152. At this time, the protective layer 113 protects the driving transistor Tdr and the power source electrode 151. [

A first flat film 161 (or a first overcoat layer) is formed on the protective layer 113. The first planarization layer 161 includes the first contact hole 131 and the second contact hole 132 in the same manner as the protection layer 113. The first driving electrode 141 is connected to the first electrode 171 through the first contact hole 131 and the power electrode 151 is connected to the second contact hole 132 through the second contact hole 132. [ And is connected to the connection electrode 152. The first planarization layer 161 smoothes the upper portion of the substrate 110 on which the driving transistor Tdr is formed. The first planarization layer 161 may be formed of, for example, a polyacrylate resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin polyimide resin, polyimide resin, unsaturated polyesters resin, poly-phenylenethers resin, polyphenylenesulfides resin, and benzocyclobutene. But is not limited thereto.

The first electrode 171 is formed on the first planarization film 161. The first electrode 171 is electrically connected to the first driving electrode 141 through the first contact hole 131. The first electrode 171 is commonly formed for each sub-pixel and is patterned through a photolithography process.

The first electrode 171 serves as an anode or a cathode according to the type of the driving transistor Tdr. In the present invention, the first electrode 171 performs the anode function of the organic light emitting diode 170, and may be made of a transparent conductive material having a relatively large work function value. For example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). In addition, the first electrode 171 may be a metal material having excellent reflection efficiency. For example, the first electrode 171 may be composed of at least two layers including aluminum (Al), silver (Ag), Ag (Pb), and the like.

The connection electrode 152 is formed on the first planarization film 161. That is, the connection electrode 152 may be formed on the same layer as the first electrode 171. At this time, the connection electrode 152 is spaced apart from the first electrode 171. The connection electrode 152 is electrically connected to the power supply electrode 151 through the second contact hole 132. The connection electrode 152 may be formed through the same process as the first electrode 171. The connection electrode 152 and the first electrode 171 may be formed of the same material, but are not limited thereto.

As shown in FIG. 5C, a second flat film 165 (or a second overcoat layer) is formed on the first flat film 161. At this time, the second flat film 165 is formed to cover the connection electrode 152 and the first electrode 171. The second flat film 165 is formed to cover the first contact hole 131 and the second contact hole 132. The second flat film 165 may be formed by applying a material such as polyacrylates resin to the entire surface of the substrate 110 and then developing and curing the material, .

The second planarization layer 165 includes a third contact hole 133. At this time, the connection electrode 152 is exposed through the third contact hole 133. The second planarization layer 165 is formed on the first contact hole 131, the second contact hole 132, the first electrode 171, and the connection electrode 152 except for the third contact hole 133. [ As shown in FIG. At this time, the second flat film 165 may be formed of the same material as the first flat film 161. That is, the second flat film 165 may be formed of, for example, a polyacrylate resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin polyimide resin, polyimide resin, unsaturated polyesters resin, poly-phenylenethers resin, polyphenylenesulfides resin, and benzocyclobutene. But is not limited thereto.

5D, an auxiliary electrode 153 is formed on the second planarization film 165. The auxiliary electrode 153 is formed on the second planarization film 165 as shown in FIG. The auxiliary electrode 153 is formed to be electrically connected to the connection electrode 152 through the third contact hole 133.

The auxiliary electrode 153 may be formed through a photolithography process using a photoresist (PR). The photolithography process is a process for forming a fine pattern on a substrate. The step of forming the auxiliary electrode 153 may include the steps of depositing an electrode material on the second flat film 165, applying a photosensitive resin on the electrode material, a step of irradiating (exposing) light to a specific region of the photosensitive resin applied using a photo mask, removing the photosensitive resin in the specific region irradiated with the light, and removing the photosensitive resin in the specific region And etching the exposed electrode material to form the auxiliary electrode 153. Therefore, the auxiliary electrode 153 is formed in an area other than the specific area, and the photosensitive resin remains on the auxiliary electrode 153. [ Here, the specific region refers to a portion of the first electrode 171 exposed in the first electrode 171 covered with the second flat film 165. At this time, the auxiliary electrode 153 may be formed of the same material as the power supply electrode 151, the first driving electrode 141, and the second driving electrode 142. The auxiliary electrode 153 may be formed of the same material as the connection electrode 152 and the first electrode 171. The auxiliary electrode 153 may be formed of, for example, Mo, Al, Cr, Au, Ti, Ni, Ne, Or an alloy thereof. In addition, the auxiliary electrode 153 may be a single layer or a multi-layer. The auxiliary electrode 153 may be made of, for example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). The auxiliary electrode 153 may be formed of at least two layers including a metal material having excellent reflection efficiency, for example, aluminum (Al), silver (Ag), silver (Ag), copper (Pb)

5E, the photosensitive resin 168 remaining on the auxiliary electrode 153 may be used as a blocking mask when etching a specific region of the second planarization film 165 . That is, the region where the photosensitive resin 168 remains is not etched on the second flat film 165, and the specific region where the photosensitive resin 168 remains is etched. Here, the specific region where the photosensitive resin 168 remains is a partial region of the first electrode 171 exposed by the etching of the second flat film 165. Therefore, since a specific region of the second flat film 165 is etched, a portion of the first electrode 171 is exposed. At this time, the second flat film 165 covers a part of the first electrode 171.

The step of etching the second flat film 165 proceeds before the step of removing the photosensitive resin 168 remaining on the auxiliary electrode 153.

At this time, the second flat film 165 has already been cured. Therefore, when the second planarization layer 165 is etched, the second planarization layer 165 is not easily etched by wet etching. In addition, if the second flat film 165 is etched by the wet etching method, the first electrode 171 may be damaged. Therefore, when the second planarizing film 165 is etched, it can be etched by a dry etching method. The dry etching method refers to a method of etching by using a gas plasma reaction rather than a liquid. After the specific area of the second flat film 165 is etched, the photosensitive resin 168 remaining on the auxiliary electrode 153 is removed. Therefore, the second flat film 165 insulates the connection electrode 152 and the first electrode 171, and covers the upper surface of the connection electrode 152. It also serves to distinguish between two adjacent sub-pixels.

As described above, the first electrode 171 connected to the driving transistor and the connection electrode 162 connected to the power supply electrode 151 are formed on the first flat film 161. The second planarization layer 165 is formed to cover the first electrode 171 and the connection electrode 162. The auxiliary electrode 153 is formed on the second flat film 165 to be connected to the connection electrode 162. Therefore, the auxiliary electrode 153 and the first electrode 171 are not formed on the same layer. Accordingly, the auxiliary electrode 153 and the first electrode 171 are formed so that at least a part thereof overlaps with the second flat film 165 interposed therebetween. Therefore, the width of the first electrode 171 may be wider than that of the auxiliary electrode and the first electrode on the same layer. Therefore, when the auxiliary electrode 153 and the first electrode 171 are not formed on the same flat film as in the case where the auxiliary electrode and the first electrode are formed on the same flat film, 171 may be formed to be wider. The opening width means a width of a part of the first electrode 171 that is not covered by the second flat film 165 in one sub-pixel. Thus, if the aperture width is widened, the aperture ratio of the sub-pixels can be improved. Further, as the aperture ratio is improved, the image quality and lifetime of the organic light emitting display device can be improved.

Further, the photosensitive resin formed on the auxiliary electrode 153 can be used as a blocking mask. Therefore, a specific region of the second flat film 165 is etched using the photosensitive resin as a blocking mask. Thus, the number of masks can be reduced. Therefore, the manufacturing process of the display panel can be simplified, and the manufacturing cost of the display panel can be lowered accordingly.

As shown in FIG. 5F, the barrier ribs 180 are formed on the auxiliary electrode 153. At this time, the barrier rib 180 may be formed in contact with the upper surface of the auxiliary electrode 153. The barrier ribs 180 may have a reverse tapered structure in which the width of the lower surface is narrower than the width of the upper surface. The inverted tapered structure has a structure in which both sides symmetrical to the center line are inclined and the width of the lower surface is narrower than the width of the upper surface. In addition, the side surface of the barrier rib 180 may have one inclined surface, but is not limited thereto and may have two or more inclined surfaces.

As shown in FIG. 5G, an organic light emitting layer 175 is formed on the first electrode 171. At this time, the organic light emitting layer 175 is formed on the first electrode 171 not covered by the second planarization layer 165. Accordingly, the organic light emitting layer 175 may not overlap the second planarization layer 165 and the auxiliary electrode 153. The organic light emitting layer 175 may be formed on the first electrode 171, the barrier rib 180, and the auxiliary electrode 153. At this time, the organic light emitting layer 175 may not be formed around the region where the barrier rib 180 contacts the auxiliary electrode 153. That is, the organic light emitting layer 175 may not be formed in a part of the auxiliary electrode 153 covered by the barrier ribs 180. Accordingly, the organic light emitting layers 175 formed in each of the two sub-pixels adjacent to the second planarization layer 165 may be separated by the barrier 165. This is merely an embodiment, and the organic light emitting layers 175 formed in each of the two sub-pixels adjacent to the second flat film 165 may be connected to each other.

The second electrode 172 is formed on the entire surface of the substrate 110 including the organic light emitting layer 175. Accordingly, the second electrode 172 is electrically connected to the auxiliary electrode 153. When the first electrode 171 serves as an anode, the second electrode 172 serves as a cathode. As the second electrode 172, a very thin and low work function metallic material may be used. For example, the second electrode 142 may be formed of a metallic material such as silver (Ag), titanium (Ti), aluminum (Al), molybdenum (Mo), or an alloy of silver (Ag) Can be used. At this time, the metallic materials may be formed to a thickness of several hundreds of angstroms (A) or less, for example, 200 angstroms or less and used as the second electrode 172. The second electrode 172 may be a semi-transparent layer and may be used as a substantially transparent cathode. However, the second electrode 172 is not limited thereto, and carbon nanotubes and graphene may be used as the second electrode 172. A material having a high transmittance such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) is further deposited on the second electrode 172 to lower the resistance of the second electrode 172 . The second electrode 172 may not be formed in a part of the peripheral portion of the contact area of the auxiliary electrode 153 that contacts the barrier rib 180. [ The second electrode 172 may be formed on the upper surface of the barrier rib 180 having an inverted taper shape. The second electrode 172 may be formed to cover the side surface of the barrier rib 180.

The organic light emitting diode 170 includes a first electrode 171, an organic light emitting layer 175 and a second electrode 172. The organic light emitting diode 170 is formed in each sub- .

Also, although not shown in the drawing, a sealing portion may be formed on the substrate 110 including the organic light emitting diode 170 and the driving transistor Tdr. The sealing portion protects the elements of the organic light emitting diode 170 and the driving transistor Tdr from an external impact and prevents water infiltration.

In the case of a thin film transistor (TFT), the present invention can be applied to both a top gate type and a bottom gate type.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100: display panel 200: gate driver
300: Data driver 400: Timing controller
171: first electrode 153: auxiliary electrode
161: first overcoat layer 165: second overcoat layer

Claims (15)

A first overcoating layer located on the driving transistor and the power electrode, the first overcoating layer having a first contact hole and a second contact hole;
A connection electrode on the first overcoat layer and connected to the power supply electrode through the first contact hole;
A first electrode on the first overcoat layer and connected to the driving transistor through the second contact hole;
A second overcoating layer on the first overcoat layer, the second overcoat layer covering the first contact hole and the second contact hole and not covering a portion of the first electrode; And
And an auxiliary electrode located on the second overcoat layer and connected to the connection electrode. The method according to claim 1,
Wherein the connection electrode is on the same layer as the first electrode and is made of the same material as the first electrode. The method according to claim 1,
Wherein the second overcoating layer separates two sub-pixels adjacent to each other. The method according to claim 1,
Wherein the second overcoating layer has a third contact hole,
And the auxiliary electrode is connected to the connection electrode through the third contact hole. The method according to claim 1,
An organic light emitting layer disposed on a portion of the first electrode not covered by the second overcoating layer; And
And a second electrode on the organic light emitting layer, the second electrode being electrically connected to the auxiliary electrode. 6. The method of claim 5,
And a barrier disposed in contact with the upper surface of the auxiliary electrode,
Wherein the organic light emitting layer is not disposed around a region where the auxiliary electrode contacts the partition wall. 6. The method of claim 5,
Wherein the first electrode is an anode and the second electrode is a cathode,
And the direction of light emitted from the organic light emitting layer is the cathode direction from the anode. Forming a first flat film on the driving transistor and the power supply electrode;
Forming a first electrode connected to the driving transistor and a connection electrode connected to the power supply electrode on the first flat film;
Forming a second planarizing film covering the first electrode and the connection electrode;
Forming an auxiliary electrode connected to the connection electrode on the second flat film; And
And etching a specific region of the second flat film to expose at least a portion of the first electrode. 9. The method of claim 8,
Wherein forming the auxiliary electrode comprises:
Depositing an electrode material on the second planarizing film;
Applying a photo resist on the electrode material;
Irradiating the photosensitive resin in the specific region of the applied photosensitive resin with light, and then removing the photosensitive resin in the specific region; And
And etching the exposed electrode material by removing the photosensitive resin in the specific region. 10. The method of claim 9,
The step of etching the specific area of the second flat film may include:
And dry etching the specific area of the second planarizing film,
Wherein the specific region is a portion where the auxiliary electrode is not formed on the second flat film,
Wherein in the dry etching step, the auxiliary electrode is not etched by the photosensitive resin on the auxiliary electrode. 9. The method of claim 8,
Forming a barrier rib on the auxiliary electrode;
Forming an organic light emitting layer on the exposed first electrode;
On the organic light-emitting layer
And forming a second electrode to be connected to the auxiliary electrode. A first overcoat layer;
A second overcoat layer positioned on the first overcoat layer; And
An anode disposed on the first overcoat layer,
The anode includes an auxiliary electrode located on the second overcoat layer different from the first overcoat layer on which the anode is disposed, and a top emission type (top emission type) organic light emitting display panel. 13. The method of claim 12,
Wherein the anode has a larger opening width than when the auxiliary electrode and the anode are located on the same overcoat layer. 13. The method of claim 12,
Further comprising an organic light emitting layer positioned on the anode,
Wherein the organic light emitting layer is not overlapped with the second overcoating layer and the auxiliary electrode. 15. The method of claim 14,
Further comprising a cathode located on the organic light emitting layer and connected to the auxiliary electrode,
Wherein the cathode overlaps with the anode and the auxiliary electrode.

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