KR20160008023A - Organic light emitting diode display device and fabricating method of the same - Google Patents

Abstract

The present invention discloses an organic light emitting display device and a manufacturing method thereof. The disclosed organic light emitting display device according to the present invention comprises: a substrate which is divided into a display area and a non-display area; a gate line which is formed on the substrate in one direction, and a data line which intersects with the gate line; a thin film transistor which is disposed on the display area, and is formed in an intersecting area of the gate line and the data line; an organic light emitting device which is disposed on the thin film transistor, and includes a first electrode, an organic light emitting layer, and a second electrode; and a pad unit which is disposed on the non-display area. The pad unit includes a pad electrode, and a protective electrode which is disposed on the pad electrode and is formed of any one selected from the group consisting of MoTi, Ti, and a combination thereof.

Description

[0001] The present invention relates to an organic electroluminescent display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to an organic light emitting display and a method of manufacturing the same, and more particularly, to an organic light emitting display having improved reliability and a manufacturing method thereof.

In recent years, as the information age has come to a full-fledged information age, a display field for visually representing electrical information signals has been rapidly developed. In response to this, various flat panel display devices having excellent performance of thinning, lightweighting, Flat Display Device) has been developed to replace CRT (Cathode Ray Tube).

Specific examples of such flat panel display devices include a liquid crystal display device (LCD), an organic light emitting display (OLED), an electrophoretic display (EPD) A plasma display panel (PDP), a field emission display (FED), an electroluminescence display (ELD), and an electro-wetting display (EWD) And the like. In general, a flat panel display panel, which realizes images, is an essential component. The flat panel display panel includes a pair of substrates bonded together with an intrinsic light emitting material or a polarizing material layer therebetween.

Since an organic light emitting diode (OLED) display device, which is one of such flat panel display devices, includes an organic light emitting element that is a self light emitting element, a separate light source used in a liquid crystal display It is lightweight and thin. In addition, it has superior viewing angle and contrast ratio compared with liquid crystal display devices, is advantageous in terms of power consumption, can be driven by DC low voltage, has a quick response speed, is resistant to external impacts due to its solid internal components, It has advantages.

Such an organic light emitting display device is divided into a display area and a non-display area outside the display area. A thin film transistor and an organic electroluminescent device are formed in the display region. The non-display region is provided with a pad portion including a thin film transistor from an external power source and a pad electrode for applying a signal voltage to the organic electroluminescent element. Here, the thin film transistor and the organic electroluminescent device are electrically connected to each other through a pad portion and a plurality of wirings.

The pad electrode of the pad portion formed in the non-display region may be exposed to the outside in order to be connected to the driving portion. At this time, corrosion of the pad electrode may occur due to external moisture and oxygen. When the pad electrode is corroded, signal transmission is not smooth and reliability may be a problem.

The present invention relates to a method of forming a pad electrode by forming a protective electrode layer on a pad electrode exposed to the outside to prevent penetration of oxygen and moisture into the pad electrode, The present invention provides an organic light emitting display device and a method of manufacturing the same, which prevent a migration phenomenon that causes conduction between pad electrodes to be electrically insulated by shifting with time from the surface or inside.

It is another object of the present invention to provide an organic light emitting display device and a method of manufacturing the same, which simplify a process required to form a protective electrode layer and reduce manufacturing cost.

According to an aspect of the present invention, there is provided an organic light emitting display including: a substrate divided into a display region and a non-display region; A gate line formed in one direction on the substrate and a data line crossing the gate line; A thin film transistor disposed on the display region and formed in a crossing region of the gate line and the data line; An organic light emitting element disposed on the thin film transistor, the organic light emitting element including a first electrode, an organic light emitting layer, and a second electrode; And a pad portion disposed on the non-display region, wherein the pad portion is disposed on the pad electrode and the pad electrode and is formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof And a protective electrode formed on the substrate.

The method of manufacturing an organic light emitting display according to the present invention includes the steps of forming a thin film transistor in the display region and a pad electrode in the non-display region on a substrate divided into a display region and a non-display region; Forming a planarization film on the thin film transistor; Forming a first electrode of an organic light emitting element disposed on the planarization film in the display region and a protective electrode disposed on the pad electrode in the non-display region; Forming a bank pattern exposing the organic light emitting device first electrode; And forming an organic light emitting layer and a second electrode on the exposed first electrode.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display, including: forming a semiconductor layer on a substrate divided into a display region and a non-display region; Forming a gate insulating film on the semiconductor layer; Forming a gate line, a gate electrode, a first pad electrode, and a second pad electrode on the gate insulating layer; Forming an interlayer insulating film on the gate line, the gate electrode, the first pad electrode, and the second pad electrode, and forming a contact hole exposing the first pad electrode and the second pad electrode; A source electrode, a drain electrode, a first protective electrode, a second protective electrode, a first dummy layer disposed on the first protective electrode, and a second dummy layer disposed on the second protective electrode, Forming a layer simultaneously; Sequentially forming a protective film and a planarizing film on the data line, the source electrode, and the drain electrode; Forming an organic light emitting diode first electrode on the planarization layer, removing the first dummy layer and the second dummy layer; Forming a bank pattern exposing the organic light emitting device first electrode; And forming an organic light emitting layer and a second electrode on the exposed first electrode.

The organic electroluminescent display device and the method of manufacturing the same according to the present invention can prevent penetration of oxygen and moisture into the pad electrode by forming a protective electrode layer on the pad electrode exposed to the outside, There is an effect of preventing a migration phenomenon in which the pad electrode that is to be electrically insulated from conduction is caused to migrate with time from the surface or inside of the substrate by the electric field formed between the pad electrodes.

Further, the organic electroluminescent display device and the method of manufacturing the same according to the present invention have the effect of simplifying the process for forming the protective electrode layer and reducing the manufacturing cost.

1 is a plan view of an organic light emitting display according to a first embodiment of the present invention.
2 is a cross-sectional view of an organic light emitting display according to a first embodiment of the present invention.
3 is a plan view of an organic light emitting display according to a second embodiment of the present invention.
4 is a cross-sectional view of an organic light emitting display according to a second embodiment of the present invention.
5 is a plan view of an organic light emitting display according to a third embodiment of the present invention.
6 is a cross-sectional view of an organic light emitting display according to a third embodiment of the present invention.
7A to 7D are views illustrating a method of manufacturing an organic light emitting display according to a fourth embodiment of the present invention.
8A to 8D illustrate a method of manufacturing an organic light emitting display according to a fifth embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if a temporal posterior relationship is described by 'after', 'after', 'after', 'before', etc., 'May not be contiguous unless it is used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, and technically various interlocking and driving are possible, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

First, an organic light emitting display according to a first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view of an organic light emitting display according to a first embodiment of the present invention. 2 is a cross-sectional view of an organic light emitting display according to a first embodiment of the present invention.

Referring to FIGS. 1 and 2, the organic light emitting display according to the first embodiment of the present invention includes a substrate 100 divided into a display region and a non-display region. The substrate 100 may be an insulating substrate. At this time, the substrate 100 may include silicon (Si), glass, plastic, or polyimide (PI). However, the present invention is not limited thereto, and a plurality of layers formed on the substrate 100 and a material capable of supporting the elements are sufficient.

A thin film transistor Tr and an organic light emitting diode OL electrically connected to the thin film transistor Tr may be disposed in a display region of the substrate 100. [ In detail, a gate line 118 is formed in one direction on the substrate 100, and a data line 119 is formed in a direction different from the one direction. The gate line 118 and the data line 119 intersect with each other to define a pixel region in the display region. A thin film transistor Tr is formed in an intersecting region of the gate line 118 and the data line 119. Also, an organic light emitting diode (OL) electrically connected to the thin film transistor (Tr) is formed in the pixel region.

The thin film transistor Tr includes a semiconductor layer 111 formed on the substrate 100, a gate electrode 113 branched from the gate line 118, a source electrode 115 branched from the data line 119, And a drain electrode 116 spaced apart from the source electrode 115 in the same layer. The semiconductor layer 111 and the gate electrode 113 may be formed so as to overlap each other with the gate insulating layer 120 interposed therebetween. An interlayer insulating film 121 may be formed on the gate electrode 113 and a source electrode 115 and a drain electrode 116 may be formed on the interlayer insulating film 121.

The gate insulating layer 120 and the interlayer insulating layer 121 may be formed on the entire surface of the substrate 100. That is, the gate insulating layer 120 and the interlayer insulating layer 121 may be formed in the display region and the non-display region. The source electrode 115 and the drain electrode 116 may be connected to the semiconductor layer 111 through a contact hole passing through the gate insulating layer 120 and the interlayer insulating layer 121, respectively.

A protective film 122 and a planarization film 123 are formed on the thin film transistor Tr. The drain electrode 116 may be electrically connected to the first electrode 130 of the organic light emitting diode OL through the passivation layer 122 and the contact hole passing through the planarization layer 123.

The organic light emitting diode OL is formed on the planarization layer 123. The organic light emitting diode OL includes a first electrode 130, a second electrode 136 formed to face the first electrode 130, and a second electrode 136 formed between the first electrode 130 and the second electrode 136 And an organic emission layer 135 formed on the organic emission layer 135.

In addition, a bank pattern 139 is formed on the planarization film 123. The bank pattern 139 is formed to expose the first electrode 130 of the organic light emitting diode OL. An organic light emitting layer 135 and a second electrode 136 are formed on the exposed first electrode 130. That is, the bank pattern 139 may define a light emitting region and a non-light emitting region. In addition, the bank pattern 139 is formed to surround the side surface of the first electrode 130, thereby preventing corrosion of the side surface of the first electrode 130.

The first electrode 130 may be an anode electrode. The first electrode 130 may have a triple-layer structure in which a first electrode layer 131, a second electrode layer 132, and a third electrode layer 133 are sequentially stacked.

The first electrode layer 131 may increase the adhesion of the second electrode layer 132. The first electrode layer 131 may be formed of a material that can not be etched with the etchant used to form the second electrode layer 132 and the third electrode layer 133. For example, the first electrode layer 131 may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof.

The second electrode layer 132 may be a reflective layer. The second electrode layer 132 may be formed of a metal or a metal alloy. For example, the second electrode layer 132 may be formed of a silver (Ag) alloy. Accordingly, the organic light emitting diode OL may emit light at an upper portion of the organic light emitting diode OL.

The third electrode layer 133 has a large work function, so that the first electrode 130 functions as an anode electrode. The third electrode layer 133 may be formed of a transparent conductive material. For example, the third electrode layer 133 may be formed of ITO.

However, the present invention is not limited thereto, and the first electrode 130 may have a four-layer structure in which the first to fourth electrode layers are sequentially stacked. At this time, the first electrode layer may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. The second electrode layer and the fourth electrode layer may be formed of a transparent conductive material. The third electrode layer may be formed of a metal or a metal alloy.

An organic light emitting layer 135 is formed on the first electrode 130. Although the organic light emitting layer 135 is shown as a single layer in the drawing, the present invention is not limited thereto. The organic light emitting layer 135 may include a hole injection layer, a hole transporting layer, an emitting material layer, and an electron transporting layer an electron transporting layer, and an electron injection layer. Although the organic light emitting layer 135 is formed only on the first electrode 130 exposed by the bank pattern 139 in the drawing, the organic light emitting layer 135 may be formed on the bank pattern 139 .

A second electrode 136 may be formed on the organic light emitting layer 135 so as to face the first electrode 130. In this case, the second electrode 136 may be a cathode electrode. The second electrode 136 may be formed of a metal or a metal alloy having a low work function. However, it is not limited thereto and may include a material which can be generally used as a cathode electrode. Further, although not shown in the figure, auxiliary electrodes may be further formed in the display region to lower the voltage drop of the second electrode 136. [

A pad portion may be disposed in the non-display region of the substrate 100. The pad unit may include a pad electrode and a protective electrode. The pad unit may include a first pad unit 140 and a second pad unit 150. The first pad unit 140 may include a first pad electrode 141 and a first protective electrode 142. The second pad unit 150 may include a second pad electrode 151 and a second protective electrode 152.

The first pad electrode 141 of the first pad portion 140 may be formed on the gate insulating layer 120. The first pad electrode 141 may be formed of the same material as the gate line 118 and the gate electrode 113 in the same layer. The first pad electrode 141 may be formed integrally with the gate line 118.

Although the gate electrode 113 or the first pad electrode 141 is formed as a single layer in the drawing, the gate electrode 113 or the first pad electrode 141 may be formed of multiple layers formed of two or more layers. The gate line 118, the gate electrode 113 or the first pad electrode 141 may be formed of a metal such as aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Cr), tantalum (Ta), titanium (Ti), molybdenum (MoTi), and combinations thereof.

The second pad electrode 151 of the second pad portion 150 may be formed on the interlayer insulating layer 121. The second pad electrode 151 may be formed of the same material as the data line 119, the source electrode 115, and the drain electrode 116. The second pad electrode 151 may be formed integrally with the data line 119.

The source electrode 115, the drain electrode 116, or the second pad electrode 151 are formed as a single layer in the drawing, but may be formed of multiple layers formed of two or more layers. The data line 119, the source electrode 115, the drain electrode 116 or the second pad electrode 151 may be formed of a metal such as aluminum (Al), tungsten (W), copper (Cu), silver (Ag) And may include any one selected from the group consisting of molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), molybdenum (MoTi), and combinations thereof.

An interlayer insulating layer 121 and a passivation layer 122 may be formed on the first pad electrode 141 to include a contact hole exposing the first pad electrode 141. The passivation layer 122 may include a contact hole exposing the second pad electrode 151 on the second pad electrode 151.

A first protective electrode 142 and a second protective electrode 152 may be formed on the protective layer 122. At this time, the first protective electrode 142 may be formed on the exposed first pad electrode 141. In addition, the second protective electrode 152 may be formed on the exposed second pad electrode 151. The planarization layer 123 may not be formed on at least the first pad portion 140 and the second pad portion 150.

That is, the first protective electrode 142 or the second protective electrode 152 may be formed on the protective layer 122 exposing the first pad electrode 141 or the second pad electrode 151, respectively have. The first protective electrode 142 or the second protective electrode 152 may be electrically connected to the first pad electrode 141 or the second pad electrode 151, respectively.

The first protective electrode 142 or the second protective electrode 152 may be formed of a material which is not corroded even when exposed to the outside. For example, the first protective electrode 142 or the second protective electrode 152 may be formed of one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. Accordingly, it is possible to prevent the first pad electrode 141 or the second pad electrode 151 from being corroded by moisture and oxygen.

The first protective electrode 142 or the second protective electrode 152 may be formed of the same material as the first electrode 130 of the organic light emitting diode OL. The first protective electrode 142 or the second protective electrode 152 may be formed of the same material as that of the first electrode layer 131 of the first electrode 130. The first protective electrode 142 or the second protective electrode 152 may be formed as a single layer. That is, the first protective electrode 142 or the second protective electrode 152 may be formed of a material that is not etched by an Ag-alloy or ITO etchant.

The pad unit may be exposed to the outside to be connected to the driving unit. That is, the pad electrode or the protective electrode may be exposed to the outside. For example, when the pad electrode or the protective electrode is formed of a material that can be corroded by moisture and oxygen such as copper (Cu) or Ag-alloy, and is exposed to the outside, there may occur a failure in signal transmission.

Accordingly, in the organic light emitting display device according to the present invention, the protective electrode is formed of a material that is not corroded on the pad electrode. For example, the protective electrode may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. Thus, the pad electrode is formed so as not to be exposed to the outside, thereby preventing the pad electrode from coming into contact with oxygen and moisture. In addition, corrosion of the pad electrode is prevented, and signal transfer failure is prevented.

Next, an organic light emitting display device according to a second embodiment of the present invention will be described with reference to FIGS. 3 and 4. FIG. 3 is a plan view of an organic light emitting display according to a second embodiment of the present invention. 4 is a cross-sectional view of an organic light emitting display according to a second embodiment of the present invention. The organic light emitting display device according to the second embodiment of the present invention may have the same structure as the organic light emitting display device according to the first embodiment described above. The description overlapping with the embodiment described above may be omitted. The same reference numerals are assigned to the same components.

3 and 4, the organic light emitting display according to the second embodiment of the present invention includes the first pad portion 240 and the second pad portion 250 except for the first embodiment of the present invention The organic light emitting display device according to the present invention can have the same structure as the organic light emitting display device according to the first embodiment.

The organic light emitting display device according to the second embodiment of the present invention includes a substrate 100 divided into a display area and a non-display area. A thin film transistor Tr and an organic light emitting diode OL electrically connected to the thin film transistor Tr may be disposed in a display region of the substrate 100. [ In addition, a pad portion may be disposed in the non-display region of the substrate 100.

The thin film transistor Tr may include a semiconductor layer 111, a gate electrode 113, a source electrode 115, and a drain electrode 116. The organic light emitting diode OL may include a first electrode 130, an organic light emitting layer 135, and a second electrode 136. The first electrode 130 of the organic light emitting diode OL may include a first electrode layer 131, a second electrode layer 132, and a third electrode layer 133.

The pad unit may include a first pad unit 240 and a second pad unit 250. The first pad unit 240 may include a first lower pad electrode 241, a first upper pad electrode 242, and a first protective electrode 243. The second pad unit 250 may include a second lower pad electrode 251, a second upper pad electrode 252, and a second protective electrode 253.

The first lower pad electrode 241 of the first pad portion 240 and the second lower pad electrode 251 of the second pad portion 250 may be formed of the same material in the same layer. The first lower pad electrode 241 and the second lower pad electrode 251 may be formed on the gate insulating layer 120.

The first lower pad electrode 241 or the second lower pad electrode 251 may be formed of the same material as the gate line 118 and the gate electrode 113 in the same layer. The first lower pad electrode 241 may be formed integrally with the gate line 118.

The gate electrode 113, the first lower pad electrode 241, or the second lower pad electrode 251 are formed as a single layer in the drawing, but may be formed of multiple layers formed of two or more layers. The gate line 118, the gate electrode 113, the first lower pad electrode 241 or the second lower pad electrode 251 may be formed of one selected from the group consisting of aluminum (Al), tungsten (W), copper (Cu) (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), molybdenum (MoTi), and combinations thereof.

An interlayer insulating layer 121 may be formed on the first lower pad electrode 241 and the second lower pad electrode 251. The interlayer insulating layer 121 may include a contact hole exposing the first lower pad electrode 241 and the second lower pad electrode 251.

The first upper pad electrode 242 of the first pad portion 240 and the second upper pad electrode 252 of the second pad portion 250 may be formed of the same material in the same layer. The first upper pad electrode 242 and the second upper pad electrode 252 may be formed on the interlayer insulating layer 121. The first upper pad electrode 242 and the second upper pad electrode 252 may be formed on the exposed first lower pad electrode 241 and the second lower pad electrode 251, have.

The first upper pad electrode 242 or the second upper pad electrode 252 may be formed of the same material as the data line 119, the source electrode 115 and the drain electrode 116 in the same layer . The second upper pad electrode 252 may be formed integrally with the data line 119.

The source electrode 115, the drain electrode 116, the first upper pad electrode 242 or the second upper pad electrode 252 are formed as a single layer in the drawing, . The data line 119, the source electrode 115, the drain electrode 116, the first upper pad electrode 242 or the second upper pad electrode 252 may be formed of aluminum (Al), tungsten (W) (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), molybdenum (MoTi), and combinations thereof. .

A protective layer 122 may be formed on the first upper pad electrode 242 and the second upper pad electrode 252. The passivation layer 122 may include a contact hole exposing the first upper pad electrode 242 and the second upper pad electrode 252.

The first protective electrode 243 of the first pad portion 240 and the second protective electrode 253 of the second pad portion 250 may be formed of the same material in the same layer. The first protective electrode 243 and the second protective electrode 253 may be formed on the protective layer 122. The first protective electrode 243 and the second protective electrode 253 may be formed on the exposed first upper pad electrode 242 and the second upper pad electrode 252, respectively.

The first protective electrode 243 or the second protective electrode 253 may be formed of a material which is not corroded even when exposed to the outside. For example, the first protective electrode 243 or the second protective electrode 253 may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. This causes the first lower pad electrode 241, the first upper pad electrode 242, the second lower pad electrode 251 and the second upper pad electrode 252 to corrode due to moisture and oxygen Problems can be prevented.

The first protective electrode 243 or the second protective electrode 253 may be formed of the same material as the first electrode 130 of the organic light emitting diode OL. In detail, the first protective electrode 243 or the second protective electrode 253 may be formed of the same material as the first electrode layer 131 of the first electrode 130. The first protective electrode 243 or the second protective electrode 253 may be formed as a single layer. The first protective electrode 243 or the second protective electrode 253 may be formed of a material that is not etched by an Ag-alloy or ITO etchant.

Therefore, in the organic light emitting display device according to the present invention, the protective electrode may be formed to be exposed to the outside. Thus, the pad electrode is formed so as not to be exposed to the outside, thereby preventing the pad electrode from coming into contact with oxygen and moisture. In addition, corrosion of the pad electrode is prevented, and signal transfer failure is prevented.

Next, an organic light emitting display device according to a third embodiment of the present invention will be described with reference to FIGS. 5 and 6. FIG. 5 is a plan view of an organic light emitting display according to a third embodiment of the present invention. 6 is a cross-sectional view of an organic light emitting display according to a third embodiment of the present invention. The organic light emitting display device according to the third embodiment of the present invention may have the same structure as the organic light emitting display device according to the previous embodiments. The description overlapping with the embodiment described above may be omitted. The same reference numerals are assigned to the same components.

5 and 6, an organic light emitting display according to a third exemplary embodiment of the present invention includes a substrate 100 divided into a display region and a non-display region. A thin film transistor Tr and an organic light emitting diode OL electrically connected to the thin film transistor Tr may be disposed in a display region of the substrate 100. [ In addition, a pad portion may be disposed in the non-display region of the substrate 100.

A gate line 118 is formed in one direction on the substrate 100, and a data line 219 is formed in a direction different from the one direction. A thin film transistor Tr is formed at a crossing region of the gate line 118 and the data line 219.

The thin film transistor Tr includes a semiconductor layer 111 formed on the substrate 100, a gate electrode 113 branched from the gate line 118, a source electrode 215 branched from the data line 219, And a drain electrode 216 spaced apart from the source electrode 215 in the same layer.

The data line 219, the source electrode 215, or the drain electrode 216 may be formed as a double layer. In detail, the data line 219 may be formed by stacking a first data line layer 217 and a second data line layer 218. The source electrode 215 may be formed by stacking a first source electrode layer 211 and a second source electrode layer 212. In addition, the drain electrode 216 may be formed by stacking a first drain electrode layer 213 and a second drain electrode layer 214.

The first data line layer 217, the first source electrode layer 211, and the first drain electrode layer 213 may be formed of the same material. The first data line layer 217 and the first source electrode layer 211 may be integrally formed.

The first data line layer 217, the first source electrode layer 211 and the first drain electrode layer 213 are formed on the second data line layer 218, the second source electrode layer 212, The bonding strength of the two-drain electrode layer 214 can be improved. For example, the first data line layer 217, the first source electrode layer 211, and the first drain electrode layer 213 may be formed of a material selected from the group consisting of moly titanium (MoTi), titanium (Ti) And may be formed of any one selected.

In addition, the second data line layer 218, the second source electrode layer 212, and the second drain electrode layer 214 may be formed of the same material. The second data line layer 218 and the second source electrode layer 212 may be integrally formed.

The second data line layer 218, the second source electrode layer 212, and the second drain electrode layer 214 may be formed of a metal having a low resistance. For example, the second data line layer 218, the second source electrode layer 212, and the second drain electrode layer 214 may be formed of copper (Cu).

The organic light emitting diode OL may include a first electrode 230, an organic light emitting layer 135, and a second electrode 136. The first electrode 230 of the organic light emitting diode OL may include a first electrode layer 232, a second electrode layer 233, and a third electrode layer 234.

The first electrode layer 232 can increase the adhesion of the second electrode layer 233. The first electrode layer 232 may be formed of a transparent conductive material. For example, the first electrode layer 232 may be formed of ITO.

The second electrode layer 233 may be a reflective layer. The second electrode layer 233 may be formed of a metal or a metal alloy. For example, the second electrode layer 233 may be formed of a silver (Ag) alloy. Accordingly, the organic light emitting diode OL may emit light at an upper portion of the organic light emitting diode OL.

The third electrode layer 234 has a large work function, so that the first electrode 230 can function as an anode electrode. The third electrode layer 234 may be formed of a transparent conductive material. For example, the third electrode layer 234 may be formed of ITO.

The pad portion may include a first pad portion 340 and a second pad portion 350. The first pad unit 340 may include a first pad electrode 341 and a first protective electrode 342. The second pad unit 350 may include a second pad electrode 351 and a second protective electrode 352.

The first pad electrode 341 of the first pad portion 340 and the second pad electrode 351 of the second pad portion 350 may be formed of the same material in the same layer. The first pad electrode 341 and the second pad electrode 351 may be formed on the gate insulating layer 120.

The first pad electrode 341 or the second pad electrode 351 may be formed of the same material as the gate line 118 and the gate electrode 113. The first pad electrode 341 may be formed integrally with the gate line 118. The second pad electrode 351 may be connected to the data line 219.

The gate electrode 113, the first pad electrode 341, or the second pad electrode 351 are formed as a single layer in the drawing, but may be formed as multiple layers formed of two or more layers. The gate line 118, the gate electrode 113, the first pad electrode 341 or the second pad electrode 351 may be formed of aluminum (Al), tungsten (W), copper (Cu), silver (Ag) , Molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), molybdenum (MoTi), and combinations thereof.

An interlayer insulating layer 121 may be formed on the first pad electrode 341 and the second pad electrode 351. The interlayer insulating layer 121 may include a contact hole exposing the first pad electrode 341 and the second pad electrode 351.

At this time, the first contact hole and the second contact hole of the interlayer insulating layer 121 may be disposed on the second pad electrode 351. The second pad electrode 351 may be connected to the second protective electrode 352 through the first contact hole. Also, the second pad electrode 351 may be connected to the data line 219 through the second contact hole.

The first protective electrode 342 of the first pad portion 340 and the second protective electrode 352 of the second pad portion 350 may be formed of the same material in the same layer. The first protective electrode 342 and the second protective electrode 352 may be formed as a single layer.

The first protective electrode 342 and the second protective electrode 352 may be formed on the interlayer insulating layer 121. The first protective electrode 342 and the second protective electrode 352 may be formed on the exposed first pad electrode 341 and the second pad electrode 351, respectively.

The first protective electrode 342 or the second protective electrode 352 may be formed of a material that is not corroded even when exposed to the outside. For example, the first protective electrode 342 or the second protective electrode 352 may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. Accordingly, it is possible to prevent the first pad electrode 341 or the second pad electrode 351 from being corroded by moisture and oxygen.

The first protective electrode 342 or the second protective electrode 352 may be formed of the same material as the data line 219, the source electrode 215 and the drain electrode 216. In detail, the first protective electrode 342 or the second protective electrode 352 is the same as the first data line layer 217, the first source electrode layer 211, and the first drain electrode layer 213 / RTI > material.

The protective layer 122 and the planarization layer 123 may not be disposed on the first protective electrode 342 and the second protective electrode 352. That is, the protective layer 122 may be formed to surround the data line 219 and be spaced apart from the first protective electrode 342 and the second protective electrode 352.

Accordingly, in the organic light emitting display according to the present invention, the protective electrode is formed of a material that is not corroded on the pad electrode, so that the pad electrode can be prevented from being in contact with oxygen and moisture. Further, corrosion of the pad portion can be prevented, and signal transmission failure can be prevented.

7A to 7D, a method of manufacturing an organic light emitting display device according to a fourth embodiment of the present invention will be described. 7A to 7D are views illustrating a method of manufacturing an organic light emitting display according to a fourth embodiment of the present invention.

The method of manufacturing an organic light emitting display device according to the fourth embodiment of the present invention may include the same structure as the organic light emitting display device according to the previously described embodiments. The description overlapping with the embodiment described above may be omitted. The same reference numerals are assigned to the same components.

Referring to FIG. 7A, a semiconductor layer 111 is formed on a substrate 100 divided into a display region and a non-display region. The semiconductor layer 111 may be formed by forming a semiconductor material layer, forming a photoresist pattern on the semiconductor material layer, etching the semiconductor material layer using the photoresist pattern as a mask, stripping the photoresist layer. The semiconductor layer 111 may be formed in the display region. A gate insulating layer 120 is formed on the semiconductor layer 111. The gate insulating layer 120 may be formed on the entire surface of the substrate 100 on which the semiconductor layer 111 is formed.

A gate line, a gate electrode 113 and lower pad electrodes 241 and 251 branched from the gate line are formed on the gate insulating layer 120. The gate line, the gate electrode 113 and the lower pad electrodes 241 and 251 are formed by forming an electrode material layer on the gate insulating layer 120, forming a photoresist pattern on the electrode material layer, And a photoresist process for etching the electrode material layer using the mask and removing the photoresist pattern. That is, the gate line, the gate electrode 113, and the lower pad electrodes 241 and 251 may be formed by the same process. Accordingly, the gate line, the gate electrode 113 and the lower pad electrodes 241 and 251 branched from the gate line can be formed of the same material in the same layer.

The gate electrode 113 may be formed in a region overlapping the semiconductor layer 111. The lower pad electrode may include a first lower pad electrode 241. The first lower pad electrode 241 may be formed integrally with the gate line. In addition, the lower pad electrode may include a second lower pad electrode 251.

Although the gate electrode 113, the first lower pad electrode 241 and the second lower pad electrode 251 are formed as a single layer in the drawing, the gate electrode 113, the first lower pad electrode 241, and the second lower pad electrode 251 may be formed as a single layer. The gate line, the gate electrode 113, the first lower pad electrode 241 and the second lower pad electrode 251 may be formed of aluminum (Al), tungsten (W), copper (Cu), silver ), Molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), molybdenum (MoTi), and combinations thereof.

An interlayer insulating layer 121 is formed on the gate line, the gate electrode 113, the first lower pad electrode 241, and the second lower pad electrode 251. The interlayer insulating layer 121 may be formed on the entire surface of the substrate 100.

A plurality of contact holes are formed on the interlayer insulating film 121. In detail, a contact hole is formed through the interlayer insulating layer 121 and the gate insulating layer 120 to expose the semiconductor layer 111. A plurality of contact holes exposing the first lower pad electrode 241 and the second lower pad electrode 251 through the interlayer insulating layer 121 are formed.

A data line, a source electrode 115, a drain electrode 116, and upper pad electrodes 242 and 252, which are branched from the data line, are formed on the interlayer insulating layer 121. The data line, the source electrode 115, the drain electrode 116 and the upper pad electrodes 242 and 252 are formed by forming an electrode material layer on the interlayer insulating layer 121, forming a photoresist pattern on the electrode material layer And a photoresist process for etching the electrode material layer using the photoresist pattern as a mask and removing the photoresist pattern. That is, the data line, the source electrode 115, the drain electrode 116, and the upper pad electrodes 242 and 252 may be formed in the same process. The data line, the source electrode 115, the drain electrode 116, and the upper pad electrodes 242 and 252 may be formed of the same material in the same layer.

The source electrode 115 and the drain electrode 116 are spaced apart from each other. The source electrode 115 and the drain electrode 116 may be formed on the exposed semiconductor layer 111, respectively. That is, the source electrode 115 and the drain electrode 116 are formed on the interlayer insulating layer 121 and are electrically connected to the semiconductor layer 121 through the contact hole formed in the interlayer insulating layer 121 and the gate insulating layer 120, (Not shown).

The upper pad electrode may include a first upper pad electrode 242. The first upper pad electrode 242 may be formed on the exposed first lower pad electrode 241. In addition, the upper pad electrode may include a second upper pad electrode 252. The second upper pad electrode 252 may be formed on the exposed second lower pad electrode 251. The second upper pad electrode 252 may be formed integrally with the data line.

Although the source electrode 115, the drain electrode 116, the first upper pad electrode 242, and the second upper pad electrode 252 are formed as a single layer in the drawing, they may be formed as multiple layers formed of two or more layers . The data line, the source electrode 115, the drain electrode 116, the first upper pad electrode 242, and the second upper pad electrode 252 may be formed of aluminum (Al), tungsten (W), copper (Cu) (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), molybdenum (MoTi), and combinations thereof.

The thin film transistor Tr including the semiconductor layer 111, the gate electrode 113, the source electrode 115 and the drain electrode 116, the first pad electrodes 241 and 242 and the second pad electrodes 251 and 252 ) Can be formed. The thin film transistor Tr may be formed in a display region, and the first pad electrodes 241 and 242 and the second pad electrodes 251 and 252 may be formed in a non-display region.

Although the pad electrode includes the lower pad electrodes 241 and 251 and the upper pad electrodes 242 and 252 in the drawing, the present invention is not limited thereto. For example, as shown in FIG. 2, the first pad electrode may be formed with the gate electrode 113 and the second pad electrode may be formed with the source electrode 115 and the drain electrode 116, for example.

A protective layer 122 is formed on the thin film transistor Tr, the first pad electrodes 241 and 242, and the second pad electrodes 251 and 252. That is, the passivation layer 122 is formed on the data line, the source electrode 115, the drain electrode 116, the first upper pad electrode 242, and the second upper pad electrode 252. The protective layer 122 may be formed on the entire surface of the substrate 100.

A planarization layer 123 is formed on the protective layer 122. The planarization layer 123 may be disposed on the thin film transistor Tr. In addition, the planarization layer 123 may not be formed on the first upper pad electrode 242 and the second upper pad electrode 252. For example, the planarization layer 123 may be formed on the entire surface of the substrate 100, and the planarization layer 123 formed on the first and second pad electrodes 241 and 242 and the second pad electrodes 251 and 252 may be removed.

Then, a contact hole is formed on the planarization layer 123 and the protection layer 122. Specifically, a contact hole is formed through the passivation layer 122 and the planarization layer 123 to expose the drain electrode 116. A plurality of contact holes exposing the first upper pad electrode 242 and the second upper pad electrode 252 through the passivation layer 122 are formed.

7B, a first electrode material layer 31, a second electrode material layer 34, a third electrode material layer 32, and a fourth electrode layer 32 are formed on the planarization layer 123 and the protective layer 122, And a material layer 33 are successively laminated. The first electrode material layer 31 to the fourth electrode material layer 33 may be formed on the entire surface of the substrate 100 on which the planarization layer 123 and the protection layer 122 are formed.

The first electrode material layer 31 may be formed of a material that is not corroded by oxygen and moisture even when exposed to the outside. The first electrode material layer 31 may be formed of a material that is not etched with an etchant capable of etching the second electrode material layer 34, the third electrode material layer 32, As shown in FIG. For example, the first electrode material layer 31 may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof.

The second electrode material layer 34 and the fourth electrode material layer 33 may be formed of a transparent conductive material. The second electrode material layer 34 may improve adhesion of the third electrode material layer 32. In addition, the fourth electrode material layer 33 has a large work function, so that the first electrode of the organic light emitting device can later serve as an anode electrode. For example, the second electrode material layer 34 and the fourth electrode material layer 33 may be formed of ITO.

The third electrode material layer 32 may be formed of a reflective material. The third electrode material layer 32 may be formed of a metal or a metal alloy. For example, the third electrode material layer 32 may be formed of a silver (Ag) alloy. Accordingly, the organic light emitting diode may be a top emission organic light emitting display device that emits light upward.

However, the plurality of electrode material layers are not limited to the intermediate layer. A three-layer electrode material layer may be formed on the planarization layer 123 and the protective layer 122.

For example, the first electrode material layer, the second electrode material layer, and the third electrode material layer may be stacked on the planarization layer 123 and the protection layer 122. At this time, the first electrode material layer may be a layer formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. The second electrode material layer may be a layer formed of a silver (Ag) -alloy. The third electrode material layer may be a layer formed of ITO.

Thereafter, a photoresist pattern is formed on the fourth electrode material layer 33. The photoresist pattern may include a first photoresist pattern 61, a second photoresist pattern 62, and a third photoresist pattern 63.

The first photoresist pattern 61 may be formed in the display region. In detail, the first photoresist pattern 61 may be formed in a region where the first electrode of the organic light emitting diode is formed later.

The second photoresist pattern 62 and the third photoresist pattern 63 may be formed in a non-display region. The second photoresist pattern 62 and the third photoresist pattern 63 may be formed in a region where a protective electrode is formed later. In detail, the second photoresist pattern 62 may be disposed on the first pad electrodes 241 and 242, and the third photoresist pattern 63 may be disposed on the second pad electrodes 251 and 252 .

At this time, the height of the first photoresist pattern 61 may be higher than that of the second photoresist pattern 62 and the third photoresist pattern 63. That is, the first to third photoresist patterns 61, 62, and 63 may be formed using different halftone masks or diffraction masks. As a result, the first photoresist pattern 61 having a stepped portion is formed later in the first electrode formation region of the organic light emitting element, and the second photoresist pattern 62 and the third photoresist pattern 62, A pattern 63 may be formed.

Referring to FIG. 7C, the first to fourth electrode material layers 31 and 34 (see FIG. 7) are formed using the first photoresist pattern 61, the second photoresist pattern 62 and the third photoresist pattern 63 as a mask. , 32, 33) are etched. Specifically, the second to fourth electrode material layers 34, 32, and 33 are formed using the first photoresist pattern 61, the second photoresist pattern 62, and the third photoresist pattern 63 as a mask. And exposes the first electrode material layer 31. Thereafter, the exposed first electrode material layer 31 is etched. That is, the first electrode material layer 31 may be formed of a material which is not etched with an etchant capable of etching the second electrode material layer 34, the third electrode material layer 32 and the fourth electrode material layer 33 It can be etched through a separate etching process.

The first electrode 130 of the organic light emitting device is etched by etching the first through fourth electrode material layers 31, 34, 32, and 33 using the first photoresist pattern 61 as a mask in the display region, Can be formed. That is, the first electrode 130 may include a first electrode layer 131, a second electrode layer 134, a third electrode layer 132, and a fourth electrode layer 133. The first electrode material layer 31 may be the first electrode layer 131, the second electrode material layer 34 may be the second electrode layer 134, The third electrode layer 132 and the fourth electrode material layer 33 may be the fourth electrode layer 133.

Further, the first to fourth electrode material layers 31, 34, 32, and 33 are etched using the second photoresist pattern 62 as a mask in the non-display area to form the first protective electrode 243 . That is, the first pad unit 240 including the first lower pad electrode 141, the first upper pad electrode 242, and the first protective electrode 243 may be formed.

In addition, a first dummy pattern may be formed on the first protective electrode 243 of the first pad unit 240. The first dummy pattern may include a first dummy layer 44, a second dummy layer 42, and a third dummy layer 43.

Further, the first to fourth electrode material layers 31, 34, 32, and 33 are etched using the third photoresist pattern 63 as a mask in the non-display area to form the second protective electrode 253 . That is, the second pad unit 250 including the second lower pad electrode 251, the second upper pad electrode 252, and the second protective electrode 253 may be formed.

In addition, a second dummy pattern may be formed on the second protective electrode 253 of the second pad unit 250. The second dummy pattern may include a fourth dummy layer 54, a fifth dummy layer 52, and a sixth dummy layer 53.

The first electrode material layer 31 may be the first protective electrode 243 and the second protective electrode 253. That is, the organic light emitting diode first electrode 130 disposed on the planarization layer 123 in the display region and the first protective electrode 243 (not shown) disposed on the first pad electrodes 241 and 242 in the non- And the second protective electrode 253 disposed on the second pad electrodes 251 and 252 may be formed at the same time.

The second to fourth electrode material layers 34, 32, and 33 may be a first dummy pattern and a second dummy pattern. In detail, the second electrode material layer 34 is the first dummy layer 44 and the fourth dummy layer 54, and the third electrode material layer 32 is the second electrode layer 42 and And the fourth electrode material layer 33 may be the third dummy layer 43 and the sixth dummy layer 53. In this case,

Then, the first photoresist pattern 61, the second photoresist pattern 62, and the third photoresist pattern 63 are ashed. Thus, the second and third photoresist patterns 62 and 63 having low steps can be removed, and the first photoresist pattern 61 can be left as the fourth photoresist pattern 64. That is, a fourth photoresist pattern 64 is formed on the first electrode 130, and the first dummy patterns 44, 42, and 43 and the second dummy patterns 54, have.

Then, the first dummy patterns 44, 42, 43 and the second dummy patterns 54, 52, 53 are etched using the fourth photoresist pattern 64 as a mask. That is, the first to sixth dummy layers 44, 42, 43, 54, 52 and 53 may be etched. At this time, the first protective electrode 243 and the second protective electrode 253 made of the first electrode material layer 31 are not etched and the second electrode material layer 34, the third electrode material layer 32, And the fourth electrode material layer 33 may be etched. That is, the first protective electrode 243 and the second protective electrode 253 are formed on the first and second dummy patterns 44, So that it may not be etched even if it is exposed to the etching solution.

When the electrode material layer of the triple layer is formed on the planarization layer 123 and the protective layer 122, the first to third electrode material layers are etched. More specifically, the second and third electrode material layers are etched using the first to third photoresist patterns 61, 62 and 63 as masks to expose the first electrode material layer. Thereafter, the exposed first electrode material layer is etched. That is, the first electrode material layer is etched by a separate etching process from the second and third electrode material layers.

At this time, the first electrode of the organic light emitting diode may be formed in the display region, and the first protective electrode and the second protective electrode may be formed in the non-display region. The first electrode may include a first electrode layer, a second electrode layer, and a third electrode layer. In addition, a first dummy pattern may be formed on the first protective electrode, and a second dummy pattern may be formed on the second protective electrode.

The first protective electrode and the second protective electrode may be formed of the first electrode material layer. The first dummy pattern and the second dummy pattern may include a double-layered dummy layer including the second electrode material layer and the third electrode material layer.

Thereafter, only the second and third photoresist patterns 62 and 63 having low steps are removed to expose the first to third electrode material layers in the first protective electrode and the second protective electrode formation region. In addition, the first photoresist pattern 61 having a high level difference becomes the fourth photoresist pattern 64.

Thereafter, only the second electrode material layer and the third electrode material layer are etched using the fourth photoresist pattern 64 as a mask, and the first and second protective electrodes formed of the first electrode material layer are etched I never do that.

Referring to FIG. 7D, the fourth photoresist pattern 64 is stripped and removed. Thus, the first electrode 130 is completed in the display area, and the first pad part 240 and the second pad part 250, from which the dummy pattern is removed, can be completed in the non-display area.

A bank pattern 139 is formed on the planarization layer 123 on which the first electrode 130 is formed. The bank pattern 139 is formed to expose the first electrode 130 of the OLED.

An organic light emitting layer 135 is formed on the exposed first electrode 130. Although the organic light emitting layer 135 is shown as a single layer in the drawing, the present invention is not limited thereto. The organic light emitting layer 135 may include a hole injection layer, a hole transporting layer, an emitting material layer, and an electron transporting layer an electron transporting layer, and an electron injection layer. Although the organic light emitting layer 135 is formed only on the first electrode 130 exposed by the bank pattern 139 in the drawing, the organic light emitting layer 135 may be formed on the bank pattern 139 .

A second electrode 136 of the organic light emitting device is formed on the organic light emitting layer 135. Here, the first electrode 130 may be an anode electrode, and the second electrode 136 may be a cathode electrode. The second electrode 136 may be formed of a metal or a metal alloy having a low work function. However, it is not limited thereto and may include a material which can be generally used as a cathode electrode. Although not shown in the drawing, an auxiliary electrode may be formed on the display region together with the first electrode 130 to lower the voltage drop of the second electrode 136.

Next, with reference to FIGS. 8A to 8D, a method of manufacturing an organic light emitting display device according to a fifth embodiment of the present invention will be described. 8A to 8D illustrate a method of manufacturing an organic light emitting display according to a fifth embodiment of the present invention.

The method of manufacturing an organic light emitting display according to the fifth embodiment of the present invention may include the same structure as the organic light emitting display according to the above-described embodiments. The description overlapping with the embodiment described above may be omitted. The same reference numerals are assigned to the same components.

Referring to FIG. 8A, a semiconductor layer 111 is formed on a substrate 100 divided into a display region and a non-display region. The semiconductor layer 111 may be formed by forming a semiconductor material layer, forming a photoresist pattern on the semiconductor material layer, etching the semiconductor material layer using the photoresist pattern as a mask, stripping the photoresist layer. The semiconductor layer 111 may be formed in the display region. A gate insulating layer 120 is formed on the semiconductor layer 111. The gate insulating layer 120 may be formed on the entire surface of the substrate 100 on which the semiconductor layer 111 is formed.

A gate line, a gate electrode 113 and pad electrodes 341 and 351 branched from the gate line are formed on the gate insulating layer 120. The gate line, the gate electrode 113 and the pad electrodes 341 and 351 are formed by forming an electrode material layer on the gate insulating layer 120, forming a photoresist pattern on the electrode material layer, A photoresist process for etching the electrode material layer and removing the photoresist pattern. That is, the gate line, the gate electrode 113, and the pad electrodes 341 and 351 may be formed by the same process. Accordingly, the gate line, the gate electrode 113 and the pad electrodes 341 and 351 branched from the gate line can be formed of the same material in the same layer.

The gate electrode 113 may be formed in a region overlapping the semiconductor layer 111. The pad electrode may include a first pad electrode 341. The first pad electrode 341 may be formed integrally with the gate line. In addition, the lower pad electrode may include a second pad electrode 351.

Although the gate electrode 113, the first pad electrode 341 and the second pad electrode 351 are formed as a single layer in the drawing, the gate electrode 113, the first pad electrode 341, and the second pad electrode 351 may be formed as multiple layers formed of two or more layers. The gate line, the gate electrode 113, the first pad electrode 341 and the second pad electrode 351 may be formed of a metal such as aluminum (Al), tungsten (W), copper (Cu), silver (Ag) And may include any one selected from the group consisting of molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), molybdenum (MoTi), and combinations thereof.

An interlayer insulating layer 121 is formed on the gate line, the gate electrode 113, the first pad electrode 341, and the second pad electrode 351. The interlayer insulating layer 121 may be formed on the entire surface of the substrate 100.

A plurality of contact holes are formed on the interlayer insulating film 121. In detail, a contact hole is formed through the interlayer insulating layer 121 and the gate insulating layer 120 to expose the semiconductor layer 111. A plurality of contact holes are formed through the interlayer insulating layer 121 to expose the first pad electrode 341 and the second pad electrode 351, respectively. The interlayer insulating layer 121 formed on the second pad electrode 351 may include a first contact hole and a second contact hole.

A lower electrode material layer 15 and an upper electrode material layer 16 are sequentially formed on the interlayer insulating layer 121. [ The lower electrode material layer 15 and the upper electrode material layer 16 may be formed in a display region and a non-display region. That is, the lower electrode material layer 15 and the upper electrode material layer 16 may be formed on the entire surface of the substrate 100.

The upper electrode material layer 16 may be formed of a material having a low resistance. For example, the upper electrode material layer 16 may be formed of copper (Cu).

The lower electrode material layer 15 may be formed of a material that is not corroded by oxygen and moisture even when exposed to the outside. In addition, the lower electrode material layer 15 can improve the adhesion of the upper electrode material layer 16. In addition, the lower electrode material layer 15 may be formed of a material that can not be etched with an etchant that can etch the upper electrode material layer 16. [ For example, the lower electrode material layer 15 may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof.

A photoresist pattern is formed on the upper electrode material layer 16. The photoresist pattern may include a first photoresist pattern 65, a second photoresist pattern 66, a third photoresist pattern 67, and a fourth photoresist pattern 68.

The first photoresist pattern 65 may be formed in a region where the data line and the source electrode are formed later. The second photoresist pattern 66 may be formed in a region where the drain electrode is formed later. The third photoresist pattern 67 may be formed in a region where the first protective electrode is formed later. The fourth photoresist pattern 68 may be formed in a region where the second protective electrode is formed later.

Referring to FIG. 8B, the lower electrode material layer 15 and the upper electrode material layer 16 are etched using the first to fourth photoresist patterns 65, 66, 67 and 68 as masks. In detail, the upper electrode material layer 16 is etched using the first to fourth photoresist patterns 65, 66, 67 and 68 as a mask to expose the lower electrode material layer 15. Thereafter, the exposed lower electrode material layer 15 is etched. That is, the lower electrode material layer 15 and the upper electrode material layer 16 may be etched by a separate etching process.

Thus, the data line 219, the source electrode 215, and the drain electrode 216 can be formed in the display region. The first protective layer 342 in the non-display area, the first dummy layer 45 disposed on the first protective electrode 342, the second protective electrode 352, and the second protective electrode 352, The second dummy layer 55 can be formed.

The data line 219, the source electrode 215, or the drain electrode 216 may be formed as a double layer. In detail, the data line 219 may be formed by stacking a first data line layer 217 and a second data line layer 218. The source electrode 215 may be formed by stacking a first source electrode layer 211 and a second source electrode layer 212. In addition, the drain electrode 216 may be formed by stacking a first drain electrode layer 213 and a second drain electrode layer 214.

The first data line layer 217, the first source electrode layer 211, the first drain electrode layer 213, the first protective electrode 342 and the second protective electrode 352 are formed on the lower electrode material layer 15, As shown in FIG. The second data line layer 218 includes a second source electrode layer 212, a second drain electrode layer 214, a first dummy layer 45 and a second dummy layer 55 formed on the upper electrode material layer 16 ).

The source electrode 215 and the drain electrode 216 are spaced apart from each other. The source electrode 215 and the drain electrode 216 may be formed on the exposed semiconductor layer 111, respectively. That is, the source electrode 215 and the drain electrode 216 may be connected to the semiconductor layer 111 through the interlayer insulating layer 121 and the contact hole formed in the gate insulating layer 120, respectively.

The first protective electrode 342 may be formed on the first pad electrode 341 through a contact hole formed in the interlayer insulating layer 121. The second protective electrode 352 may be formed on the second pad electrode 351 through a first contact hole formed in the interlayer insulating layer 121. The data line 219 may be formed on the second pad electrode 351 through a second contact hole formed in the interlayer insulating layer 121.

That is, the first contact hole and the second contact hole of the interlayer insulating layer 121 may be disposed on the second pad electrode 351. At this time, the second pad electrode 351 may be connected to the second protective electrode 352 through the first contact hole. Also, the second pad electrode 351 may be connected to the data line 219 through the second contact hole.

The thin film transistor Tr including the semiconductor layer 111, the gate electrode 113, the source electrode 215 and the drain electrode 216, the first pad electrode 341 and the first protective electrode 342 And a second pad portion 350 including a second pad electrode 351 and a second protective electrode 352. The first pad portion 340 may include a first pad portion 340 and a second pad portion 350, The thin film transistor Tr may be formed in a display region, and the first pad portion 340 and the second pad portion 350 may be formed in a non-display region. A first dummy layer 45 may be formed on the first pad portion 340 and a second dummy layer 55 may be formed on the second pad portion 350.

A protective layer 122 is formed on the display region and the data line 219. A planarization layer 123 is formed on the protective layer 122. The passivation layer 122 and the planarization layer 123 may not be disposed on the first pad portion 340 and the second pad portion 350. For example, the protective layer 122 and the planarization layer 123 are formed on the entire surface of the substrate 100 and the protective layer 122 formed on the first protective electrode 342 and the second protective electrode 352, And the planarizing film 123 can be removed.

That is, in the non-display region, the passivation layer 122 may surround the data line 219 and may be spaced apart from the first pad 340 and the second pad 350. Accordingly, the first dummy layer 45 and the second dummy layer 55 can be exposed to the outside.

The passivation layer 122 and the planarization layer 123 disposed on the thin film transistor Tr may include a contact hole. Specifically, a contact hole is formed through the protective film 122 and the planarization film 123 to expose the drain electrode 216.

8C, a first electrode material layer 35, a second electrode material layer 36, and a third electrode material layer 37 are sequentially stacked on the planarization layer 123 and the protective layer 122, . The first electrode material layer 35 to the third electrode material layer 37 may be formed on the entire surface of the substrate 100 on which the planarization layer 123 and the protection layer 122 are formed.

The first electrode material layer 35 and the third electrode material layer 37 may be formed of a transparent conductive material. For example, the first electrode material layer 35 and the third electrode material layer 37 may be formed of ITO.

The first electrode material layer 35 can improve the adhesion of the second electrode material layer 36. In addition, the third electrode material layer 37 has a large work function, so that the first electrode of the organic light emitting device can later serve as an anode electrode.

The second electrode material layer 36 may be formed of a reflective material. The second electrode material layer 36 may be formed of a metal or a metal alloy. For example, the second electrode material layer 36 may be formed of a silver (Ag) alloy. Accordingly, the organic light emitting diode may be a top emission organic light emitting display device that emits light upward.

A photoresist pattern 69 is formed on the third electrode material layer 37. The photoresist pattern 69 may be formed in the display region. In detail, the photoresist pattern 69 may be formed in a region where the first electrode of the organic light emitting diode is formed later.

Referring to FIG. 8D, the first to third electrode material layers 35, 36 and 37 are etched using the photoresist pattern 69 as a mask. At this time, the first electrode material layer 35, the second electrode material layer 36, and the third electrode material layer 37 may be etched at the same time using the same etching solution. In the non-display area, the first dummy layer 45 and the second dummy layer 55 are formed on the first electrode material layer 35, the second electrode material layer 36, and the third electrode material layer 37). ≪ / RTI >

The first electrode 230 of the organic light emitting element can be formed by etching the first through third electrode material layers 35, 36, and 37 using the photoresist pattern 69 as a mask in the display region have. That is, the first electrode 230 may include a first electrode layer 232, a second electrode layer 233, and a third electrode layer 234. The first electrode material layer 35 may be the first electrode layer 232, the second electrode material layer 36 may be the second electrode layer 233, The third electrode layer 234 may be formed.

At this time, the first protective electrode 342 and the second protective electrode 352 made of the lower electrode material layer 15 in the non-display area are not etched. That is, only the first dummy layer 15 and the second dummy layer 16 made of the upper electrode material layer 16 may be etched.

That is, the lower electrode material layer 15 is not etched with the etching solution of the first electrode 230. In addition, the upper electrode material layer 16 may be etched with the etchant of the first electrode 230. Accordingly, the first and second protective electrodes 342 and 352 are formed on the first dummy layer 45, the second dummy layer 55, the first electrode material layer 35, The third electrode material layer 37 and the third electrode material layer 37, so that even if they are exposed to the etching solution, they may not be etched.

Thereafter, the photoresist pattern 69 is stripped and removed. Thus, the first electrode 230 is completed in the display area, and the first pad part 340 and the second pad part 350, from which the dummy layer is removed, can be completed in the non-display area.

A bank pattern 139 is formed on the planarization layer 123 on which the first electrode 230 is formed. The bank pattern 139 is formed to expose the first electrode 230 of the organic light emitting device.

An organic light emitting layer 135 is formed on the exposed first electrode 230. Further, a second electrode 136 of the organic light emitting device is formed on the organic light emitting layer 135. Accordingly, the organic light emitting device OL including the first electrode 230, the organic light emitting layer 135, and the second electrode 136 can be formed. Although not shown in the drawings, an auxiliary electrode may be formed on the display region together with the first electrode 230 to lower the voltage drop of the second electrode 136.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified in other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

100: substrate
140, 240, 340:
150, 250, 350:
Tr: thin film transistor
OL: Organic light emitting device

Claims (26)

A substrate divided into a display area and a non-display area;
A gate line formed in one direction on the substrate and a data line crossing the gate line;
A thin film transistor disposed on the display region and formed in a crossing region of the gate line and the data line;
An organic light emitting element disposed on the thin film transistor, the organic light emitting element including a first electrode, an organic light emitting layer, and a second electrode; And
And a pad portion disposed on the non-display region,
Wherein the pad portion includes a pad electrode and a protective electrode disposed on the pad electrode and formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. Display device.
The method according to claim 1,
Wherein the first electrode of the organic light emitting device is formed by stacking a first electrode layer, a second electrode layer, and a third electrode layer.
3. The method of claim 2,
Wherein the protective electrode is formed of the same material as the first electrode layer of the first electrode.
3. The method of claim 2,
Wherein the second electrode layer is formed of an Ag-alloy, and the third electrode layer is formed of ITO.
The method of claim 3,
And a fourth electrode layer is further formed on the third electrode layer.
6. The method of claim 5,
Wherein the second electrode layer and the fourth electrode layer are formed of ITO, and the third electrode layer is formed of a silver (Ag) -alloy.
The method according to claim 1,
The thin-
A semiconductor layer formed on the substrate;
A gate insulating film formed on the semiconductor layer;
A gate electrode formed on the gate insulating film;
An interlayer insulating film formed on the gate electrode; And
And a source electrode and a drain electrode formed on the interlayer insulating film and connected to the semiconductor layer through a contact hole.
8. The method of claim 7,
Wherein the source electrode is formed by stacking a first source electrode layer and a second source electrode layer,
Wherein the drain electrode is formed by stacking a first drain electrode layer and a second drain electrode layer.
9. The method of claim 8,
Wherein the protective electrode is formed of the same material as the first source electrode layer and the first drain electrode layer.
8. The method of claim 7,
Wherein the pad portion includes a first pad portion and a second pad portion,
Wherein the first pad portion includes a first pad electrode and a first protective electrode,
And the second pad portion includes a second pad electrode and a second protective electrode.
11. The method of claim 10,
Wherein the first pad electrode is formed of the same material as the gate electrode of the thin film transistor.
12. The method of claim 11,
And the second pad electrode is formed of the same material as the source electrode and the drain electrode of the thin film transistor.
12. The method of claim 11,
And the second pad electrode is formed of the same material as the gate electrode.
14. The method of claim 13,
And the data lines are disposed on and connected to the second pad electrodes.
11. The method of claim 10,
The first pad electrode is formed by stacking a first lower pad electrode and a first upper pad electrode,
Wherein the second pad electrode is formed by stacking a second lower pad electrode and a second upper pad electrode.
16. The method of claim 15,
The first lower pad electrode and the second lower pad electrode are formed of the same material as the gate electrode,
Wherein the first upper pad electrode and the second upper pad electrode are formed of the same material as the source electrode and the drain electrode.
Forming a thin film transistor in the display region and a pad electrode in the non-display region on a substrate divided into a display region and a non-display region;
Forming a planarization film on the thin film transistor;
Forming a first electrode of an organic light emitting element disposed on the planarization film in the display region and a protective electrode disposed on the pad electrode in the non-display region;
Forming a bank pattern exposing the organic light emitting device first electrode; And
And forming an organic light emitting layer and a second electrode on the exposed first electrode.
18. The method of claim 17,
Wherein forming the first electrode and the protective electrode comprises:
Sequentially forming a first electrode material layer, a second electrode material layer and a third electrode material layer on the entire surface of the substrate on which the planarization layer is formed;
Forming a first photoresist pattern having a high level difference in the first electrode formation region on the third electrode material layer and forming a second photoresist pattern having a low level difference in the protection electrode formation region;
Etching the first to third electrode material layers using the first and second photoresist patterns as masks;
Ashing the first and second photoresist patterns to remove only the second photoresist pattern having a low step and exposing the first to third electrode material layers in the protective electrode forming area;
Etching only the exposed second and third electrode material layers; And
And removing the first photoresist pattern. The method of manufacturing an organic light emitting display according to claim 1,
19. The method of claim 18,
Etching the first to third electrode material layers using the first and second photoresist patterns as masks,
Etching the second and third electrode material layers and exposing the first electrode material layer;
And etching the exposed first electrode material layer. ≪ Desc / Clms Page number 21 >
19. The method of claim 18,
Wherein the first electrode material layer is a material that is not etched with the etchant of the second electrode material layer and the third electrode material layer.
19. The method of claim 18,
Wherein the first electrode material layer is any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof.
Forming a semiconductor layer on a substrate divided into a display region and a non-display region;
Forming a gate insulating film on the semiconductor layer;
Forming a gate line, a gate electrode, a first pad electrode, and a second pad electrode on the gate insulating layer;
Forming an interlayer insulating film on the gate line, the gate electrode, the first pad electrode, and the second pad electrode, and forming a contact hole exposing the first pad electrode and the second pad electrode;
A source electrode, a drain electrode, a first protective electrode, a second protective electrode, a first dummy layer disposed on the first protective electrode, and a second dummy layer disposed on the second protective electrode, Forming a layer simultaneously;
Sequentially forming a protective film and a planarizing film on the data line, the source electrode, and the drain electrode;
Forming an organic light emitting diode first electrode on the planarization layer, removing the first dummy layer and the second dummy layer;
Forming a bank pattern exposing the organic light emitting device first electrode; And
And forming an organic light emitting layer and a second electrode on the exposed first electrode.
22. The method of claim 21,
The step of forming the data line, the source electrode, the drain electrode, the first protective electrode, the second protective electrode, the first dummy layer and the second dummy layer includes:
Sequentially forming a lower electrode material layer and an upper electrode material layer on the interlayer insulating film;
Exposing the lower electrode material layer by etching the upper electrode material layer; And
And etching the exposed lower electrode material layer. ≪ Desc / Clms Page number 20 >
24. The method of claim 23,
Wherein the data line, the source electrode, and the drain electrode are formed as a double layer in which the lower electrode material layer and the upper electrode material layer are stacked,
The first protective electrode and the second protective electrode are formed of a lower electrode material layer,
Wherein the first dummy layer and the second dummy layer are formed of the upper electrode material layer.
25. The method of claim 24,
Wherein the lower electrode material layer is formed of a material that is not etched with the etchant of the first electrode,
Wherein the upper electrode material layer is formed of a material that is etched by the etchant of the first electrode.
23. The method of claim 22,
A first contact hole and a second contact hole exposing the second pad electrode are formed on the interlayer insulating film,
The second protective electrode is formed on the first contact hole, and the data line is formed on the second contact hole.

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