KR20160019407A - 광반도체 리플렉터용 에폭시 수지 조성물, 광반도체 장치용 열경화성 수지 조성물 및 그것을 이용하여 얻어지는 광반도체 장치용 리드 프레임, 밀봉형 광반도체 소자 및 광반도체 장치 - Google Patents

광반도체 리플렉터용 에폭시 수지 조성물, 광반도체 장치용 열경화성 수지 조성물 및 그것을 이용하여 얻어지는 광반도체 장치용 리드 프레임, 밀봉형 광반도체 소자 및 광반도체 장치 Download PDF

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Publication number
KR20160019407A
KR20160019407A KR1020157029989A KR20157029989A KR20160019407A KR 20160019407 A KR20160019407 A KR 20160019407A KR 1020157029989 A KR1020157029989 A KR 1020157029989A KR 20157029989 A KR20157029989 A KR 20157029989A KR 20160019407 A KR20160019407 A KR 20160019407A
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South Korea
Prior art keywords
optical semiconductor
resin composition
thermosetting resin
semiconductor device
lead frame
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KR1020157029989A
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English (en)
Korean (ko)
Inventor
유이치 후카미치
가즈히로 후케
Original Assignee
닛토덴코 가부시키가이샤
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Application filed by 닛토덴코 가부시키가이샤 filed Critical 닛토덴코 가부시키가이샤
Publication of KR20160019407A publication Critical patent/KR20160019407A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • C08K3/0033—
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Chemical & Material Sciences (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
KR1020157029989A 2013-06-13 2014-04-22 광반도체 리플렉터용 에폭시 수지 조성물, 광반도체 장치용 열경화성 수지 조성물 및 그것을 이용하여 얻어지는 광반도체 장치용 리드 프레임, 밀봉형 광반도체 소자 및 광반도체 장치 KR20160019407A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2013-124772 2013-06-13
JP2013124772 2013-06-13
JP2013251256 2013-12-04
JPJP-P-2013-251256 2013-12-04
PCT/JP2014/061303 WO2014199728A1 (ja) 2013-06-13 2014-04-22 光半導体リフレクタ用エポキシ樹脂組成物、光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、封止型光半導体素子ならびに光半導体装置

Publications (1)

Publication Number Publication Date
KR20160019407A true KR20160019407A (ko) 2016-02-19

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ID=52022030

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157029989A KR20160019407A (ko) 2013-06-13 2014-04-22 광반도체 리플렉터용 에폭시 수지 조성물, 광반도체 장치용 열경화성 수지 조성물 및 그것을 이용하여 얻어지는 광반도체 장치용 리드 프레임, 밀봉형 광반도체 소자 및 광반도체 장치

Country Status (5)

Country Link
JP (1) JP5825650B2 (zh)
KR (1) KR20160019407A (zh)
CN (1) CN105122484A (zh)
TW (1) TW201446873A (zh)
WO (1) WO2014199728A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6883185B2 (ja) * 2015-09-24 2021-06-09 日東電工株式会社 光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、光半導体装置、光半導体素子
WO2017051838A1 (ja) * 2015-09-24 2017-03-30 日東電工株式会社 光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、光半導体装置、光半導体素子
EP4153686A1 (en) 2020-05-19 2023-03-29 BYK-Chemie GmbH Thermoset polymer powder

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011258845A (ja) 2010-06-11 2011-12-22 Nitto Denko Corp 光半導体装置用エポキシ樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5421546B2 (ja) * 2007-07-05 2014-02-19 日立化成株式会社 熱硬化性光反射用樹脂組成物、並びにその樹脂組成物を用いた光半導体素子搭載用基板及び光半導体装置
JP4623322B2 (ja) * 2007-12-26 2011-02-02 信越化学工業株式会社 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース及びその成形方法
JP5550230B2 (ja) * 2008-07-22 2014-07-16 日立化成株式会社 熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法並びに光半導体装置
JP2012175030A (ja) * 2011-02-24 2012-09-10 Nitto Denko Corp 光半導体素子収納用実装パッケージ用樹脂組成物およびそれを用いて得られる光半導体発光装置
JP5840377B2 (ja) * 2011-04-14 2016-01-06 日東電工株式会社 反射樹脂シートおよび発光ダイオード装置の製造方法
JP5644831B2 (ja) * 2012-10-23 2014-12-24 日立化成株式会社 リフレクターの製造方法及びｌｅｄ装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011258845A (ja) 2010-06-11 2011-12-22 Nitto Denko Corp 光半導体装置用エポキシ樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置

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WO2014199728A1 (ja) 2014-12-18
JP5825650B2 (ja) 2015-12-02
CN105122484A (zh) 2015-12-02
TW201446873A (zh) 2014-12-16
JPWO2014199728A1 (ja) 2017-02-23

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