KR20160016917A - 플라즈마 프로세싱 시스템들을 위한 안테나 어레이 구성들 - Google Patents

플라즈마 프로세싱 시스템들을 위한 안테나 어레이 구성들 Download PDF

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Publication number
KR20160016917A
KR20160016917A KR1020157036828A KR20157036828A KR20160016917A KR 20160016917 A KR20160016917 A KR 20160016917A KR 1020157036828 A KR1020157036828 A KR 1020157036828A KR 20157036828 A KR20157036828 A KR 20157036828A KR 20160016917 A KR20160016917 A KR 20160016917A
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KR
South Korea
Prior art keywords
closed loop
loop antenna
antenna array
deposition system
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020157036828A
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English (en)
Korean (ko)
Inventor
존 엠. 화이트
조제프 쿠델라
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20160016917A publication Critical patent/KR20160016917A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H05H2001/4667—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020157036828A 2013-05-31 2014-04-15 플라즈마 프로세싱 시스템들을 위한 안테나 어레이 구성들 Withdrawn KR20160016917A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361829476P 2013-05-31 2013-05-31
US61/829,476 2013-05-31
PCT/US2014/034144 WO2014193553A1 (en) 2013-05-31 2014-04-15 Antenna array configurations for plasma processing systems

Publications (1)

Publication Number Publication Date
KR20160016917A true KR20160016917A (ko) 2016-02-15

Family

ID=51989299

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157036828A Withdrawn KR20160016917A (ko) 2013-05-31 2014-04-15 플라즈마 프로세싱 시스템들을 위한 안테나 어레이 구성들

Country Status (4)

Country Link
JP (1) JP2016530699A (OSRAM)
KR (1) KR20160016917A (OSRAM)
CN (1) CN105340063A (OSRAM)
WO (1) WO2014193553A1 (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10682059B1 (en) * 2018-12-28 2020-06-16 Endra Life Sciences Inc. Radio frequency applicator and thermoacoustic imaging system employing the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112010U (OSRAM) * 1989-02-27 1990-09-07
EP0489407A3 (en) * 1990-12-03 1992-07-22 Applied Materials, Inc. Plasma reactor using uhf/vhf resonant antenna source, and processes
JPH051383A (ja) * 1991-06-25 1993-01-08 Canon Inc 大面積マイクロ波プラズマｃｖｄ装置
JPH06251896A (ja) * 1992-12-28 1994-09-09 Hitachi Ltd プラズマ処理方法及び装置
KR100238627B1 (ko) * 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
JP3630765B2 (ja) * 1995-04-04 2005-03-23 キヤノン株式会社 堆積膜の製造装置およびその製造方法
JP3501668B2 (ja) * 1997-12-10 2004-03-02 キヤノン株式会社 プラズマｃｖｄ方法及びプラズマｃｖｄ装置
JP2000345351A (ja) * 1999-05-31 2000-12-12 Anelva Corp プラズマｃｖｄ装置
JP3836636B2 (ja) * 1999-07-27 2006-10-25 独立行政法人科学技術振興機構 プラズマ発生装置
KR200253559Y1 (ko) * 2001-07-30 2001-11-22 주식회사 플라즈마트 회전방향으로 균일한 플라즈마 밀도를 발생시키는유도결합형 플라즈마 발생장치의 안테나구조
KR100523851B1 (ko) * 2003-05-07 2005-10-27 학교법인 성균관대학 대면적처리용 내장형 선형안테나를 구비하는 유도결합플라즈마 처리장치
EP1480250A1 (en) * 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
JP4471589B2 (ja) * 2003-05-26 2010-06-02 三井造船株式会社 プラズマ発生用アンテナ装置及びプラズマ処理装置
JP4324205B2 (ja) * 2007-03-30 2009-09-02 三井造船株式会社 プラズマ生成装置およびプラズマ成膜装置
TW200845833A (en) * 2007-05-01 2008-11-16 Delta Electronics Inc Plasma generating device
WO2009096953A1 (en) * 2008-01-30 2009-08-06 Applied Materials, Inc. Integrated microwave waveguide with impedance transition
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20120279943A1 (en) * 2011-05-03 2012-11-08 Applied Materials, Inc. Processing chamber with cooled gas delivery line

Also Published As

Publication number Publication date
WO2014193553A1 (en) 2014-12-04
JP2016530699A (ja) 2016-09-29
CN105340063A (zh) 2016-02-17

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Date Code Title Description
PA0105 International application

Patent event date: 20151228

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid