KR20160014667A - 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치 - Google Patents
감광성 수지 조성물, 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치 Download PDFInfo
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- KR20160014667A KR20160014667A KR1020157036355A KR20157036355A KR20160014667A KR 20160014667 A KR20160014667 A KR 20160014667A KR 1020157036355 A KR1020157036355 A KR 1020157036355A KR 20157036355 A KR20157036355 A KR 20157036355A KR 20160014667 A KR20160014667 A KR 20160014667A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- H01L51/50—
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Liquid Crystal (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2013-135044 | 2013-06-27 | ||
JP2013135044 | 2013-06-27 | ||
PCT/JP2014/066935 WO2014208647A1 (ja) | 2013-06-27 | 2014-06-26 | 感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置および有機el表示装置 |
Publications (1)
Publication Number | Publication Date |
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KR20160014667A true KR20160014667A (ko) | 2016-02-11 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020157036355A KR20160014667A (ko) | 2013-06-27 | 2014-06-26 | 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6279571B2 (zh) |
KR (1) | KR20160014667A (zh) |
CN (1) | CN105324718B (zh) |
TW (1) | TWI627179B (zh) |
WO (1) | WO2014208647A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130018239A (ko) * | 2010-03-26 | 2013-02-20 | 닛뽄 페인트 마린 가부시키가이샤 | 수성 도료 조성물 및 도막 형성 방법 |
TWI843647B (zh) * | 2018-12-12 | 2024-05-21 | 日商Jsr股份有限公司 | 感光性樹脂組成物、抗蝕劑圖案膜的製造方法、及鍍敷造形物的製造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6306621B2 (ja) * | 2015-02-17 | 2018-04-04 | 富士フイルム株式会社 | 薄膜トランジスタ基板の製造方法、表示装置の製造方法及び表示装置 |
JP6426563B2 (ja) * | 2015-08-31 | 2018-11-21 | 富士フイルム株式会社 | 感光性組成物、硬化膜の製造方法、液晶表示装置の製造方法、有機エレクトロルミネッセンス表示装置の製造方法、およびタッチパネルの製造方法 |
JP6844115B2 (ja) * | 2016-03-28 | 2021-03-17 | 日本ゼオン株式会社 | 感放射線樹脂組成物及び電子部品 |
US10815426B2 (en) * | 2016-08-17 | 2020-10-27 | Sharp Kabushiki Kaisha | Liquid crystal cell for scanning antenna and method of producing liquid crystal cell for scanning antenna |
TWI735595B (zh) * | 2017-06-12 | 2021-08-11 | 奇美實業股份有限公司 | 正型感光性聚矽氧烷組成物及其應用 |
WO2019093245A1 (ja) * | 2017-11-09 | 2019-05-16 | 富士フイルム株式会社 | 装置、有機層形成用組成物 |
WO2020218062A1 (ja) * | 2019-04-24 | 2020-10-29 | Jsr株式会社 | 感光性樹脂組成物、レジストパターン膜の製造方法、およびメッキ造形物の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011209681A (ja) | 2009-10-16 | 2011-10-20 | Fujifilm Corp | 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機el表示装置、及び、液晶表示装置 |
JP2011221471A (ja) | 2010-04-14 | 2011-11-04 | Jsr Corp | ポジ型感放射線性組成物、層間絶縁膜及びその形成方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102138104B (zh) * | 2008-09-04 | 2013-01-23 | 日立化成工业株式会社 | 半导体封装用印刷电路板的保护膜用感光性树脂组合物 |
JP5476758B2 (ja) * | 2009-03-19 | 2014-04-23 | Jsr株式会社 | 感放射線性樹脂組成物、液晶表示素子の層間絶縁膜、保護膜及びスペーサーとその形成方法 |
KR20120089650A (ko) * | 2009-10-16 | 2012-08-13 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 및 층간 절연막의 형성 방법 |
JP2011138116A (ja) * | 2009-12-04 | 2011-07-14 | Jsr Corp | 感放射線性樹脂組成物、層間絶縁膜並びにそれらの形成方法 |
KR101336148B1 (ko) * | 2011-04-20 | 2013-12-03 | 제이에스알 가부시끼가이샤 | 포지티브형 감광성 수지 조성물, 표시 소자용 층간 절연막 및 그 형성 방법 |
KR101954114B1 (ko) * | 2011-09-26 | 2019-03-05 | 후지필름 가부시키가이샤 | 감광성 수지 조성물, 경화막의 형성 방법, 경화막, 유기 el 표시 장치, 및 액정 표시 장치 |
KR101932449B1 (ko) * | 2011-11-02 | 2018-12-26 | 후지필름 가부시키가이샤 | 포지티브형 감광성 수지 조성물, 경화막의 형성 방법, 경화막, 액정 표시 장치, 및 유기 el 표시 장치 |
JP2013171101A (ja) * | 2012-02-20 | 2013-09-02 | Fujifilm Corp | ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置 |
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2014
- 2014-06-26 JP JP2015524105A patent/JP6279571B2/ja active Active
- 2014-06-26 KR KR1020157036355A patent/KR20160014667A/ko not_active Application Discontinuation
- 2014-06-26 TW TW103122009A patent/TWI627179B/zh active
- 2014-06-26 CN CN201480035928.1A patent/CN105324718B/zh active Active
- 2014-06-26 WO PCT/JP2014/066935 patent/WO2014208647A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011209681A (ja) | 2009-10-16 | 2011-10-20 | Fujifilm Corp | 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機el表示装置、及び、液晶表示装置 |
JP2011221471A (ja) | 2010-04-14 | 2011-11-04 | Jsr Corp | ポジ型感放射線性組成物、層間絶縁膜及びその形成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130018239A (ko) * | 2010-03-26 | 2013-02-20 | 닛뽄 페인트 마린 가부시키가이샤 | 수성 도료 조성물 및 도막 형성 방법 |
TWI843647B (zh) * | 2018-12-12 | 2024-05-21 | 日商Jsr股份有限公司 | 感光性樹脂組成物、抗蝕劑圖案膜的製造方法、及鍍敷造形物的製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6279571B2 (ja) | 2018-02-14 |
WO2014208647A1 (ja) | 2014-12-31 |
CN105324718A (zh) | 2016-02-10 |
CN105324718B (zh) | 2019-11-05 |
JPWO2014208647A1 (ja) | 2017-02-23 |
TWI627179B (zh) | 2018-06-21 |
TW201504253A (zh) | 2015-02-01 |
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