KR20150119921A - 제한된 기록 내구성을 갖는 캐시들에 대한 세트-간 웨어-레벨링 - Google Patents
제한된 기록 내구성을 갖는 캐시들에 대한 세트-간 웨어-레벨링 Download PDFInfo
- Publication number
- KR20150119921A KR20150119921A KR1020157025301A KR20157025301A KR20150119921A KR 20150119921 A KR20150119921 A KR 20150119921A KR 1020157025301 A KR1020157025301 A KR 1020157025301A KR 20157025301 A KR20157025301 A KR 20157025301A KR 20150119921 A KR20150119921 A KR 20150119921A
- Authority
- KR
- South Korea
- Prior art keywords
- cache
- sets
- memory
- swap
- leveling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0891—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches using clearing, invalidating or resetting means
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0864—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches using pseudo-associative means, e.g. set-associative or hashing
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7211—Wear leveling
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Memory System Of A Hierarchy Structure (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/772,400 | 2013-02-21 | ||
| US13/772,400 US9348743B2 (en) | 2013-02-21 | 2013-02-21 | Inter-set wear-leveling for caches with limited write endurance |
| PCT/US2014/015994 WO2014130317A1 (en) | 2013-02-21 | 2014-02-12 | Inter-set wear-leveling for caches with limited write endurance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20150119921A true KR20150119921A (ko) | 2015-10-26 |
Family
ID=50272693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157025301A Abandoned KR20150119921A (ko) | 2013-02-21 | 2014-02-12 | 제한된 기록 내구성을 갖는 캐시들에 대한 세트-간 웨어-레벨링 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9348743B2 (enExample) |
| EP (1) | EP2959390A1 (enExample) |
| JP (1) | JP2016507847A (enExample) |
| KR (1) | KR20150119921A (enExample) |
| CN (1) | CN105009093A (enExample) |
| WO (1) | WO2014130317A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10083120B2 (en) | 2016-06-27 | 2018-09-25 | SK Hynix Inc. | Memory system, and address mapping method and access method thereof |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9292451B2 (en) | 2013-02-19 | 2016-03-22 | Qualcomm Incorporated | Methods and apparatus for intra-set wear-leveling for memories with limited write endurance |
| KR20150062039A (ko) * | 2013-11-28 | 2015-06-05 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 동작 방법 |
| US9239679B2 (en) * | 2013-12-19 | 2016-01-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | System for efficient caching of swap I/O and/or similar I/O pattern(s) |
| US9053790B1 (en) * | 2014-07-01 | 2015-06-09 | Sandisk Technologies Inc. | Counter for write operations at a data storage device |
| US9251909B1 (en) | 2014-09-29 | 2016-02-02 | International Business Machines Corporation | Background threshold voltage shifting using base and delta threshold voltage shift values in flash memory |
| US10127157B2 (en) * | 2014-10-06 | 2018-11-13 | SK Hynix Inc. | Sizing a cache while taking into account a total bytes written requirement |
| US10452533B2 (en) | 2015-07-14 | 2019-10-22 | Western Digital Technologies, Inc. | Access network for address mapping in non-volatile memories |
| US10445232B2 (en) | 2015-07-14 | 2019-10-15 | Western Digital Technologies, Inc. | Determining control states for address mapping in non-volatile memories |
| US9921969B2 (en) | 2015-07-14 | 2018-03-20 | Western Digital Technologies, Inc. | Generation of random address mapping in non-volatile memories using local and global interleaving |
| US10445251B2 (en) | 2015-07-14 | 2019-10-15 | Western Digital Technologies, Inc. | Wear leveling in non-volatile memories |
| US10452560B2 (en) | 2015-07-14 | 2019-10-22 | Western Digital Technologies, Inc. | Wear leveling in non-volatile memories |
| US10248571B2 (en) * | 2016-08-11 | 2019-04-02 | Hewlett Packard Enterprise Development Lp | Saving position of a wear level rotation |
| US10101964B2 (en) | 2016-09-20 | 2018-10-16 | Advanced Micro Devices, Inc. | Ring buffer including a preload buffer |
| US10503649B2 (en) * | 2016-11-28 | 2019-12-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit and address mapping method for cache memory |
| US10475519B2 (en) | 2018-03-23 | 2019-11-12 | Micron Technology, Inc. | Methods for detecting and mitigating memory media degradation and memory devices employing the same |
| CN108920386B (zh) * | 2018-07-20 | 2020-06-26 | 中兴通讯股份有限公司 | 面向非易失性内存的磨损均衡及访问方法、设备和存储介质 |
| US11537307B2 (en) | 2018-08-23 | 2022-12-27 | Micron Technology, Inc. | Hybrid wear leveling for in-place data replacement media |
| US10761739B2 (en) | 2018-08-23 | 2020-09-01 | Micron Technology, Inc. | Multi-level wear leveling for non-volatile memory |
| US10983829B2 (en) * | 2019-07-12 | 2021-04-20 | Micron Technology, Inc. | Dynamic size of static SLC cache |
| US11194582B2 (en) | 2019-07-31 | 2021-12-07 | Micron Technology, Inc. | Cache systems for main and speculative threads of processors |
| US12223172B2 (en) * | 2022-12-28 | 2025-02-11 | SK hynix NAND Product Solutions Corporation | Systems, methods, and media for controlling background wear leveling in solid-state drives |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1294489A (en) * | 1970-05-12 | 1972-10-25 | Solartron Electronic Group | Linearizing circuit |
| US3772595A (en) * | 1971-03-19 | 1973-11-13 | Teradyne Inc | Method and apparatus for testing a digital logic fet by monitoring currents the device develops in response to input signals |
| US7035967B2 (en) | 2002-10-28 | 2006-04-25 | Sandisk Corporation | Maintaining an average erase count in a non-volatile storage system |
| US7046174B1 (en) * | 2003-06-03 | 2006-05-16 | Altera Corporation | Byte alignment for serial data receiver |
| US8112574B2 (en) | 2004-02-26 | 2012-02-07 | Super Talent Electronics, Inc. | Swappable sets of partial-mapping tables in a flash-memory system with a command queue for combining flash writes |
| US7237067B2 (en) | 2004-04-22 | 2007-06-26 | Hewlett-Packard Development Company, L.P. | Managing a multi-way associative cache |
| KR100755702B1 (ko) * | 2005-12-27 | 2007-09-05 | 삼성전자주식회사 | 비휘발성 메모리가 캐쉬로 사용되는 저장 장치 및 그 동작방법 |
| WO2008057557A2 (en) * | 2006-11-06 | 2008-05-15 | Rambus Inc. | Memory system supporting nonvolatile physical memory |
| US7568068B2 (en) | 2006-11-13 | 2009-07-28 | Hitachi Global Storage Technologies Netherlands B. V. | Disk drive with cache having volatile and nonvolatile memory |
| US9153337B2 (en) | 2006-12-11 | 2015-10-06 | Marvell World Trade Ltd. | Fatigue management system and method for hybrid nonvolatile solid state memory system |
| JP4470186B2 (ja) * | 2006-12-12 | 2010-06-02 | エルピーダメモリ株式会社 | 半導体記憶装置 |
| US20100115175A9 (en) | 2006-12-18 | 2010-05-06 | Zhiqing Zhuang | Method of managing a large array of non-volatile memories |
| US8543742B2 (en) | 2007-02-22 | 2013-09-24 | Super Talent Electronics, Inc. | Flash-memory device with RAID-type controller |
| FR2913785B1 (fr) * | 2007-03-13 | 2009-06-12 | St Microelectronics Sa | Gestion de memoire tampon circulaire |
| KR100857761B1 (ko) | 2007-06-14 | 2008-09-10 | 삼성전자주식회사 | 웨어 레벨링을 수행하는 메모리 시스템 및 그것의 쓰기방법 |
| JP2009104687A (ja) * | 2007-10-22 | 2009-05-14 | Fujitsu Ltd | 記憶装置及び制御回路 |
| JP4292225B2 (ja) * | 2007-12-17 | 2009-07-08 | 株式会社東芝 | 情報記録装置および情報記録方法 |
| US8621137B2 (en) * | 2007-12-27 | 2013-12-31 | Sandisk Enterprise Ip Llc | Metadata rebuild in a flash memory controller following a loss of power |
| US8275945B2 (en) | 2008-02-05 | 2012-09-25 | Spansion Llc | Mitigation of flash memory latency and bandwidth limitations via a write activity log and buffer |
| US8095724B2 (en) * | 2008-02-05 | 2012-01-10 | Skymedi Corporation | Method of wear leveling for non-volatile memory and apparatus using via shifting windows |
| US20100017650A1 (en) * | 2008-07-19 | 2010-01-21 | Nanostar Corporation, U.S.A | Non-volatile memory data storage system with reliability management |
| US20100185816A1 (en) | 2009-01-21 | 2010-07-22 | Sauber William F | Multiple Cache Line Size |
| US8255613B2 (en) * | 2009-04-30 | 2012-08-28 | International Business Machines Corporation | Wear-leveling and bad block management of limited lifetime memory devices |
| JP2012013733A (ja) * | 2010-06-29 | 2012-01-19 | Renesas Electronics Corp | 表示装置の駆動回路 |
| US8356153B2 (en) | 2010-11-19 | 2013-01-15 | International Business Machines Corporation | Adaptive wear leveling via monitoring the properties of memory reference stream |
| CN102043723B (zh) * | 2011-01-06 | 2012-08-22 | 中国人民解放军国防科学技术大学 | 用于通用流处理器的可变访存模式的片上缓存结构 |
| US20120311228A1 (en) | 2011-06-03 | 2012-12-06 | Advanced Micro Devices, Inc. | Method and apparatus for performing memory wear-leveling using passive variable resistive memory write counters |
| JP2014530422A (ja) * | 2011-10-27 | 2014-11-17 | ▲ホア▼▲ウェイ▼技術有限公司 | バッファマッピングを制御するための方法およびバッファシステム |
| CN102439572B (zh) * | 2011-10-27 | 2014-04-02 | 华为技术有限公司 | 控制缓存映射的方法及缓存系统 |
| US9665233B2 (en) | 2012-02-16 | 2017-05-30 | The University Utah Research Foundation | Visualization of software memory usage |
| US9292451B2 (en) | 2013-02-19 | 2016-03-22 | Qualcomm Incorporated | Methods and apparatus for intra-set wear-leveling for memories with limited write endurance |
-
2013
- 2013-02-21 US US13/772,400 patent/US9348743B2/en not_active Expired - Fee Related
-
2014
- 2014-02-12 CN CN201480009440.1A patent/CN105009093A/zh active Pending
- 2014-02-12 KR KR1020157025301A patent/KR20150119921A/ko not_active Abandoned
- 2014-02-12 EP EP14709777.8A patent/EP2959390A1/en not_active Withdrawn
- 2014-02-12 JP JP2015558874A patent/JP2016507847A/ja not_active Ceased
- 2014-02-12 WO PCT/US2014/015994 patent/WO2014130317A1/en not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10083120B2 (en) | 2016-06-27 | 2018-09-25 | SK Hynix Inc. | Memory system, and address mapping method and access method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2959390A1 (en) | 2015-12-30 |
| CN105009093A (zh) | 2015-10-28 |
| US9348743B2 (en) | 2016-05-24 |
| JP2016507847A (ja) | 2016-03-10 |
| WO2014130317A1 (en) | 2014-08-28 |
| US20140237160A1 (en) | 2014-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9348743B2 (en) | Inter-set wear-leveling for caches with limited write endurance | |
| Lee et al. | FAST: An efficient flash translation layer for flash memory | |
| Kang et al. | Performance trade-offs in using NVRAM write buffer for flash memory-based storage devices | |
| US9418700B2 (en) | Bad block management mechanism | |
| Kang et al. | A superblock-based flash translation layer for NAND flash memory | |
| JP6018696B2 (ja) | 半導体ストレージ | |
| CN102779096B (zh) | 一种基于页块面三维的闪存地址映射方法 | |
| TW200947211A (en) | Memory system | |
| KR20100021868A (ko) | 플래시 메모리 장치를 위한 버퍼 캐쉬 관리 방법 | |
| US20120317342A1 (en) | Wear leveling method for non-volatile memory | |
| CN103383666B (zh) | 改善缓存预取数据局部性的方法和系统及缓存访问方法 | |
| US11663136B2 (en) | Storage capacity recovery source selection | |
| CN105005510B (zh) | 应用于固态硬盘阻变存储器缓存的纠错保护架构及方法 | |
| CN101609431B (zh) | 闪存装置的运作方法及闪存装置 | |
| Chen et al. | Beyond address mapping: A user-oriented multiregional space management design for 3-D NAND flash memory | |
| García et al. | Composing lifetime enhancing techniques for non-volatile main memories | |
| Cui et al. | Leveraging partial-refresh for performance and lifetime improvement of 3D NAND flash memory in cyber-physical systems | |
| US20150378935A1 (en) | Storage table replacement method | |
| Lin et al. | Greedy page replacement algorithm for flash-aware swap system | |
| CN114968074B (zh) | 数据储存装置以及非挥发式存储器控制方法 | |
| Lin et al. | History-aware page replacement algorithm for NAND flash-based consumer electronics | |
| CN105608014A (zh) | 一种使用mram的存储设备 | |
| CN106326135A (zh) | 一种平移非易失性存储器nvm的数据的方法及装置 | |
| Park et al. | Efficient management of PCM-based swap systems with a small page size | |
| TWI763050B (zh) | 自適應損耗平衡方法及演算法與相關記憶體裝置及設備 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20150915 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| A302 | Request for accelerated examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20160722 Comment text: Request for Examination of Application |
|
| PA0302 | Request for accelerated examination |
Patent event date: 20160722 Patent event code: PA03022R01D Comment text: Request for Accelerated Examination |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20160822 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20170112 |
|
| PC1904 | Unpaid initial registration fee |