KR20150075195A - Fast SiC epitaxy growth - Google Patents

Fast SiC epitaxy growth Download PDF

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KR20150075195A
KR20150075195A KR1020130162915A KR20130162915A KR20150075195A KR 20150075195 A KR20150075195 A KR 20150075195A KR 1020130162915 A KR1020130162915 A KR 1020130162915A KR 20130162915 A KR20130162915 A KR 20130162915A KR 20150075195 A KR20150075195 A KR 20150075195A
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South Korea
Prior art keywords
substrate
epitaxial layer
gas
sic
epitaxial
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KR1020130162915A
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Korean (ko)
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서한석
이승석
김장열
은태희
김흥락
여임규
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주식회사 포스코
재단법인 포항산업과학연구원
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Priority to KR1020130162915A priority Critical patent/KR20150075195A/en
Publication of KR20150075195A publication Critical patent/KR20150075195A/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a SiC substrate having an epitaxial layer formed thereon, wherein the SiC substrate includes: a SiC substrate; and a SiC epitaxial layer formed on the substrate. A thickness of the epitaxial layer is uniform even at a high epitaxial growing speed, and the epitaxial layer with controlled generation of Si droplet is formed on the substrate.

Description

Silicon carbide epitaxy high-speed growth process {Fast SiC epitaxy growth}

The present invention relates to a SiC substrate on which an SiC epitaxial layer is formed, a method of forming an epitaxial layer, and an apparatus for forming an epitaxial layer.

Epitaxial growth technology is a technique of vapor-growing a single crystal thin film layer used in the manufacture of integrated circuits such as a bipolar transistor or a MOSL S1, and a uniform monocrystalline thin film is grown on a clean semiconductor single crystal substrate in accordance with the crystal orientation of the substrate, This is a very important technique because it can form a sharp impurity gradient of a large junction.

As the devices for carrying out such epitaxial growth, three types are generally used: a vertical pancake type, a barrel type (cilantro type), and a horizontal type. These growth apparatuses include a reaction chamber having a susceptor for placing a single crystal substrate therein or a heating means including an RF generator provided outside the reaction chamber and the like. Called single wafer epitaxial growth apparatus.

The single wafer epitaxial growth apparatus has a reaction chamber in which a single crystal substrate on which an epitaxial layer is stacked is disposed, and a gas inlet for introducing a source gas and a carrier gas into the reaction chamber, And a gas outlet. In addition, a heating means such as a RF generator for heating the substrate is provided outside the reaction chamber.

In the case of forming the epitaxial layer on the substrate using the above-described epitaxial growth apparatus, the substrate is placed on the susceptor, while the substrate is rotated by the support shaft for supporting the susceptor and the rotation mechanism for rotating the substrate, The substrate is heated to a predetermined temperature by roll heating. Further, a source gas and a carrier gas are supplied into the reaction chamber from the gas inlet at a predetermined flow rate for a predetermined time.

However, when the epitaxial growth is performed using such an epitaxial growth apparatus, the epitaxial layer deposited on the single crystal is not uniform in film thickness, and a problem arises in the film thickness.

1. Japanese Laid-Open Patent Application No. 2009-508799

The present invention provides an SiC substrate having an SiC epitaxial layer, a method of forming an epitaxial layer, and an apparatus for forming an epitaxial layer.

The present invention, in one embodiment,

A SiC substrate; And a SiC epitaxial layer formed on the substrate,

An SiC substrate on which an epitaxial layer satisfying Equation (1) is formed is provided.

&Quot; (1) "

0.97 X S1 / | C-d1 | ? S2 / | C-d2 | ? 1.03 X S1 / | C-d1 |

In the above Equation 1, C represents a substrate center point, d 1 represents an arbitrary point in the substrate edge direction from the substrate center point, and d 2 represents an arbitrary point except d 1 from the substrate center point toward the substrate edge direction . Also, | Cd 1 | Represents the distance from the substrate to the center d 1, | Cd 2 | denotes the distance from the center to the substrate d 2, S1 is | represents the amount of formation of the epitaxial layer in, S2 is | | Cd Cd 1 2 > of the epitaxial layer.

In addition, the present invention, in one embodiment,

Introducing a SiC source gas, a hydrogen gas and a hydrogen chloride gas horizontally onto a rotating substrate, and laminating an SiC epitaxial layer on the substrate,

A method of forming an epitaxial layer satisfying the following expression (2) is provided.

&Quot; (2) "

0.97D1? D2? 1.03D1

In Equation 2, D1 denotes the average deposition rate at the substrate center point of any two points to the substrate-edge orientation from the (C) d 3 to d 4, D2 is the substrate edge direction from the substrate center point (C) represents the average deposition rate at any two points d 5 to d 6 except d 3 and d 4 .

In addition, the present invention, in one embodiment,

A reaction chamber in which gas inlets and gas outlets are formed on both sides so that the gas moves in the horizontal direction; And

And a susceptor which is disposed inside the reaction chamber and is rotatable and on which a substrate is disposed.

In the present invention, it is possible to produce a substrate having an epitaxial layer formed at a high epitaxial growth rate with uniform thickness and an epitaxial layer formed with Si droplet suppressed on the surface of the epitaxial layer.

1 is a graph showing the epitaxial deposition rate according to the movement distance of a source gas according to an example of the present invention.
2 is a schematic diagram showing a configuration of an epitaxial formation apparatus according to an example of the present invention.
3 is a graph showing the epitaxial deposition rate according to the movement distance of the source gas in the embodiment of the present invention.
4 is a graph showing the epitaxial deposition rate according to the movement distance of the source gas in the comparative example of the present invention.

The substrate on which the epitaxial layer of the present invention is formed includes, as one example, a SiC substrate and a SiC epitaxial layer formed on the SiC substrate.

The substrate on which the epitaxial layer is formed satisfies the following formula (1).

&Quot; (1) "

0.97 X S1 / | Cd 1 | ≤ S2 / | Cd 2 | ? 1.03 X S1 / | Cd 1 |

In the above Equation 1, C represents a substrate center point, d 1 represents an arbitrary point in the substrate edge direction from the substrate center point, and d 2 represents an arbitrary point except d 1 from the substrate center point toward the substrate edge direction . Also, | Cd 1 | Represents the distance from the center of the substrate to d 1 , | Cd 2 | represents the distance from the substrate center to d 2 , S 1 represents the amount of epitaxial layer formation at | Cd 1 |, S 2 represents | Cd 2 | Of the epitaxial layer.

According to Equation (1), it means that the formation amount of the epitaxial layer at any point in the substrate edge direction with respect to the center point of the substrate is the same in the error range of 3%. That is, it means that an epitaxial layer of almost uniform thickness is formed because the amount of formation of the epitaxial layer is the same in an error range of 3% at any point on the substrate.

In one embodiment, the SiC substrate may be circular and may be 50-150 mm or 80-100 mm in diameter. Uniform formation of an epitaxial layer to be described later in the above range is easy. The SiC substrate may be a SiC substrate used in the art.

The epitaxial layer is made of SiC, which is the same material as the substrate, and has a uniform thickness. The epitaxial layer may have an average thickness depending on the kind of the final product, but may be, for example, 100 mm or less, 50 mm or less, 10 mm or less, or 7 mm or less.

In addition, the number of pits on the surface of the epitaxial layer may be 1,000 or less, 800 or less, or 500 or less. Pits are one of the surface defects and the greater the number of pits, the greater the risk of product failure. Therefore, in the present invention, it is preferable to control the number of such pits to 1,000 or less.

In one embodiment, a buffer layer may be additionally formed between the SiC substrate and the SiC epitaxial layer. The buffer layer may be formed to reduce surface defects of the epitaxial layer. The buffer layer may be formed of the same SiC as the SiC substrate and the SiC epitaxial layer.

Further, the present invention relates to a method of forming an epitaxial layer on a substrate. In one embodiment, the epitaxial layer is formed on a rotating SiC substrate in such a manner that a SiC source gas, a carrier gas, And depositing an SiC epitaxial layer on the substrate.

The method of forming the epitaxial layer satisfies the following expression (2).

&Quot; (2) "

0.97D1? D2? 1.03D1

In Equation 2, D1 denotes the average deposition rate of from d 3 to d 4 two arbitrary points of the substrate edge direction from the substrate center point (C), D2 is the substrate edge direction from the substrate center point (C) represents the average deposition rate at any two points d 5 to d 6 except d 3 and d 4 .

That is, D1 can be expressed by the following equation (3), and D2 can be expressed by the following equation (4).

&Quot; (3) "

D1 = | (g 4 -g 3) | / | (d 4 -d 3) |

&Quot; (4) "

D2 = | (g 6 -g 5 ) | / | (d 6 -d 5 ) |

G 3 represents an epitaxial deposition rate at d 3 , which is an arbitrary point in the substrate edge direction from the substrate center point, and g 4 represents an epitaxial deposition rate at any point except d 3 from the substrate center point toward the substrate edge direction 4 < / RTI > Therefore, | (d 4 -d 3 ) | means the distance from d 3 to d 4 (d 3 -d 4 ), and D 1 means the average deposition rate in the d 3 -d 4 section.

In the equation (4), g 5 represents the epitaxial growth rate at d 5 , which is an arbitrary point except d 3 and d 4 , from the substrate center point toward the substrate edge point, and g 6 represents the epitaxial growth rate from d 3 , d 4, and d 5 at any point except d 6 . Therefore, | (d 6 -d 5 ) | means the distance from d 5 to d 6 (d 5 -d 6 ), and D 2 means the average deposition rate from d 5 -d 6 .

According to Equation (2), it means that the average deposition rate is the same in an error range of 3% in any part of the substrate edge direction with respect to the center point of the substrate.

Generally, since the SiC source gas forming the epitaxial layer flows in the horizontal direction with respect to the substrate, the epitaxial deposition rate tends to decrease in the substrate with respect to the flow direction of the SiC source gas. In particular, in the present invention, this reduction rate linearly decreases within an error range of 3%. Since the epitaxial deposition rate is linearly decreased, the epitaxial layer formed on the rotating substrate can be formed to have a uniform thickness.

1 is a graph showing the deposition rate of the epitaxial layer according to the inflow distance of the source gas. 1, the average deposition rate in the d 3 -d 4 section has the same value within the 3% error range and the average deposition rate in the d 5 -d 6 section.

In one embodiment, the SiC epitaxial layer is formed by horizontally introducing a SiC source gas, a hydrogen gas, and a hydrogen chloride gas onto a rotating substrate.

As the SiC substrate, the above-described SiC substrate can be used. At this time, the substrate may be a substrate rotated in a square term with respect to the center of the substrate. As the SiC source gas moving in the horizontal direction moves, the epitaxial deposition rate decreases substantially linearly. Thus, by rotating the substrate when forming the epitaxial layer, a uniform epitaxial layer can be formed.

The SiC source gas can be divided into an Si source gas and a C source gas. Specifically, the Si source gas may be SiH 4 and the C source gas may be C 3 H 8 . The Si source gas and the C source gas may be introduced onto the substrate to form an SiC epitaxial thin film.

The influent flow rate of the Si source gas and the C source gas is not particularly limited and can be appropriately adjusted according to the size of the substrate, the thickness of the desired epitaxial layer, and the epitaxial growth rate. In the present invention, the inflow rate of the Si source gas can be controlled to 50 to 200 slm, specifically 70 to 150 slm, for the rapid growth of the epitaxial layer, and the flow rate of the C source gas is 20 to 50 slm, 35 slm. Further, the ratio of C / Si in the source gas may be 0.5 to 2.0, specifically 1 to 1.3.

The carrier gas can form a high-quality SiC epitaxial layer on the substrate. As such a carrier gas, hydrogen gas or the like can be used. The inflow rate of the carrier gas may be changed according to the inflow rate of the source gas. Conventionally, when the inflow flow rate of the source gas is increased in order to increase the epitaxial growth rate, there is a fear that an epitaxial layer in which the growth of the central portion of the substrate is convex is formed. Therefore, in the present invention, an epitaxial layer having a high growth rate and high uniformity as a whole can be manufactured by adjusting the inflow rate of the carrier gas. For example, the inflow rate of the carrier gas may be 180 to 210 slm.

The halogen gas is used to inhibit the generation of droplets of silicon and to improve the growth rate. As the halogen gas, a hydrogen chloride gas or the like can be used. The influent flow rate of the halogen gas may be changed according to the influent flow rate of the source gas and the carrier gas. If the concentration of silicon in the source gas is high, a droplet may be formed on the surface of the epitaxial layer due to gas phase nucleation. Therefore, in the present invention, the inflow flow rate of the carrier gas is adjusted to, for example, 0.3 to 0.6 slm to obtain an epitaxial layer having a uniform surface.

Further, in one embodiment, the incoming gas may further comprise nitrogen. The nitrogen can be used as a doping gas, and the inflow flow rate can be appropriately adjusted so long as it forms a uniform epitaxial layer.

Further, in one embodiment, the temperature and pressure at which the epitaxial layer is formed are not particularly limited, and can be appropriately adjusted according to the content of the introduced gas. In the present invention, for example, the temperature at which the epitaxial layer is formed can be controlled at 1500 to 1600 ° C, and the pressure can be controlled at 100 to 150 mbar.

By this step, an epitaxial layer having a uniform thickness can be formed on the substrate.

Further, the present invention may further include a step of forming a buffer layer on the substrate before forming the epitaxial layer. In this case, the epitaxial layer is formed on the buffer layer.

The buffer layer may be formed by a conventionally known method.

In addition, the present invention relates to an epitaxial layer forming apparatus, and the epitaxial layer forming apparatus can be a conventionally used apparatus. As an example, the forming apparatus may include a reaction chamber in which gas inlets and gas outlets are formed on both sides so that the gas moves in a horizontal direction; And

And a susceptor located inside the reaction chamber, rotatable and having a substrate disposed thereon.

The formation of the epitaxial layer on the substrate is performed inside the reaction chamber. The SiC source gas, the hydrogen gas, and the hydrogen chloride gas are introduced into the reaction chamber through the gas inlet, and then moved in the horizontal direction to flow out through the gas outlet. .

A susceptor is formed inside the reaction chamber. A substrate may be disposed on the susceptor, and the susceptor may be connected to another rotating means and rotated to form a uniform epitaxial layer on the substrate.

The SiC source gas in the inlet gas in the reaction chamber can be stacked on the substrate as an epitaxial layer while moving in the horizontal direction.

Further, a separate heating device may be formed outside the reaction chamber to adjust the temperature of the reaction chamber to a temperature range suitable for forming the epitaxial layer.

2 is a schematic diagram of an epitaxial layer forming apparatus according to an example of the present invention. 2, the reaction chamber 100 is composed of a gas inlet 110 and a gas outlet 120. The gases 210, 220, 230, and 240 introduced into the gas inlet 110 are horizontally And then flows out from the gas outlet 120. [ A susceptor 130 is formed in the reaction chamber. A substrate 310 is disposed on the susceptor 130 and an epitaxial layer 320 (not shown) is formed on the substrate while being rotated by another rotating means May be formed.

In the gas inlet 110, the carrier gas 210, the halogen gas 220, the C source gas 230, and the Si source gas 240 are introduced, and the C source gas 230 and the Si source gas 240 Carbon and silicon are deposited on the substrate during transport to form an SiC epitaxial layer.

Particularly, in the present invention, by optimally controlling the inflow rate of the gas, that is, the carrier gas 210, the halogen gas 220, the C source gas 230, and the Si source gas 240, By making the epitaxial deposition rate almost linearly reduced, a uniform epitaxial layer can be obtained.

Hereinafter, the present invention will be described in more detail through examples and the like, but the scope of the present invention is not limited thereto.

Example  One

4H-SiC, 4-inch 4-degree off and N-type substrates were placed on the susceptor inside the reactor, and an epitaxial layer of 7 탆 was formed on the substrate while rotating.

In this case, SiH 4 , C 3 H 8 , H 2 and HCl gas were used as the inflow gas, and the flow rates of the gases were SiH 4 about 100 slm, C 3 H 8 About 30 slm, about 190 slm for H 2 , and about 0.5 slm for HCl.

Comparative Example  One

An epitaxial layer was formed in the same manner as in Example 1, except that the flow rate of H 2 in the inflow gas was changed to 150 slm and the flow rate of HCl gas was changed to 0.2 slm.

Experimental Example

In Example 1 and Comparative Example 1, the change in the epitaxial deposition rate according to the source gas inflow distance was measured. Here, the thickness of the epitaxial layer was measured using FT-IR.

FIG. 3 is a graph of the epitaxial deposition rate according to the gas inflow distance in Example 1, and FIG. 4 is a graph of the epitaxial deposition rate according to the gas inflow distance in Comparative Example 1.

As shown in FIG. 3, the epitaxial deposition rate according to Example 1 showed a tendency that the deposition rate decreased linearly as the distance increased.

However, the epitaxial deposition rate according to Comparative Example 1 of FIG. 4 did not show a uniform pattern of deposition rate depending on the distance, and the epitaxial deposition rate tended to decrease to a curve.

Thereby, the epitaxial layer produced by Example 1 has a uniform thickness, and the epitaxial layer produced by Comparative Example 1 has a non-uniform thickness.

100: Reaction chamber
110: gas inlet
120: gas outlet
130: susceptor
210: Carrier gas
220: Halogen gas
230: C source gas
240: Si source gas
310: SiC substrate
320: SiC epitaxial layer

Claims (10)

A SiC substrate; And
A SiC epitaxial layer formed on the substrate,
Wherein an epitaxial layer satisfying the following formula (1) is formed.
&Quot; (1) "
0.97 X S1 / | Cd 1 | ≤ S2 / | Cd 2 | ? 1.03 X S1 / | Cd 1 |
In the above equation (1)
C represents a substrate center point,
d 1 represents an arbitrary point in the substrate edge direction from the substrate center point,
d 2 represents any point except d 1 from the substrate center point toward the substrate edge point,
| Cd 1 | Represents the distance from the center of the substrate to d 1 ,
| Cd 2 | represents the distance from the center of the substrate to d 2 ,
S1 is | represents the amount of formation of the epitaxial layer in, | d 1 C-
S2 is | represents the amount of formation of the epitaxial layer in | d 2 C-. The SiC substrate according to claim 1, wherein an epitaxial layer having a diameter of 50 to 150 mm is formed on the substrate. The SiC substrate according to claim 1, wherein an epitaxial layer having a number of pits of 1,000 or less on the surface of the epitaxial layer is formed. The SiC substrate according to claim 1, wherein an epitaxial layer is formed, further comprising a buffer layer formed between the substrate and the epitaxial layer. A step of horizontally flowing a SiC source gas, a carrier gas and a halogen gas onto a rotating substrate to laminate an SiC epitaxial layer on the substrate,
A method for forming an epitaxial layer satisfying the following formula (2): < EMI ID =
&Quot; (2) &quot;
0.97D1? D2? 1.03D1
In Equation (2)
D1 indicates the average deposition rate at the substrate center point of any two points in the direction from the substrate edge (C) d 3 to d 4,
D2 is the average deposition rate in the d to 5 d 6 two arbitrary points other than the d 3 and d 4 to the substrate edge direction from the substrate center point (C). 6. The method of claim 5, SiC source gas SiH 4 and C 3 H 8 in the method of forming the epitaxial layer. 7. The method of claim 6, SiH 4 and the inlet flow rate of the C 3 H 8 are each 50 to 200 slm and from 20 to 50 slm in the method of forming the epitaxial layer. 6. The method of forming an epitaxial layer according to claim 5, wherein the carrier gas is hydrogen gas and the halogen gas is hydrogen chloride gas. 6. The method of claim 5, wherein the flow rate of the hydrogen gas is from 180 to 210 slm. 6. The method of claim 5, wherein the flow rate of the hydrogen chloride gas is 0.3 to 0.6 slm.
KR1020130162915A 2013-12-24 2013-12-24 Fast SiC epitaxy growth KR20150075195A (en)

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