CN220812699U

CN220812699U - Silicon carbide crystal growing device

Info

Publication number: CN220812699U
Application number: CN202322148638.7U
Authority: CN
Inventors: 秦皓然; 张洁
Original assignee: Hunan Sanan Semiconductor Co Ltd
Current assignee: Hunan Sanan Semiconductor Co Ltd
Priority date: 2023-08-10
Filing date: 2023-08-10
Publication date: 2024-04-19
Anticipated expiration: 2033-08-10

Abstract

The application provides a silicon carbide crystal growth device. The silicon carbide crystal growth device comprises a crucible, wherein the crucible comprises a chamber, and the chamber comprises a crystal growth area and a raw material stacking area which are communicated with each other; a first heating member which is located outside the crucible and is provided around the raw material stacking area in the circumferential direction of the crucible; and the silicon-containing gas storage tank is positioned at the outer side of the crucible, is communicated with the raw material stacking area and is used for conveying silicon-containing gas to the raw material stacking area. In the preparation process of the silicon carbide crystal growth device, the silicon-containing gas can be conveyed to the raw material stacking area through the silicon-containing gas storage tank, so that the proportion of silicon atmosphere in the silicon carbide raw material is improved, carbonization of the silicon carbide raw material is inhibited, gas phase components are stabilized, the occurrence probability of crystal carbon wrapping and polytype problems is reduced, and the yield of the silicon carbide crystal is improved.

Description

Silicon carbide crystal growing device

Technical Field

The utility model relates to the technical field of crystal preparation, in particular to a silicon carbide crystal growth device.

Background

Silicon carbide (SiC) is used as a third-generation semiconductor, has the characteristics of large forbidden bandwidth, high thermal conductivity, high carrier saturation mobility and the like, and the excellent physical properties of the silicon carbide can meet the requirements of a power semiconductor device on high temperature, high voltage and high frequency, so that the silicon carbide plays an important role in the fields of new energy automobiles, communication, power transmission and the like. In addition, the crystal lattices of silicon carbide and gallium nitride are matched with thermal expansion, so that silicon carbide can be used as an ideal substrate material for growing high-quality gallium nitride.

At present, silicon carbide crystals are commonly grown by a Physical Vapor Transport (PVT) method, and the silicon carbide raw material is sublimated by heating at a high temperature, so that the sublimated gas is crystallized in a seed crystal area to form a single crystal. However, since the sublimation temperature of carbon is higher than that of silicon, the loss rate of silicon components in the silicon carbide raw material is higher than that of carbon in the crystal growth process, so that the silicon carbide raw material can be gradually carbonized in the crystal growth process, carbonized silicon carbide raw material particles are transmitted into the crystal along with the air flow in the growth chamber to form carbon inclusion defects, and the carbon inclusion defects can induce defects such as microtubes, dislocation and stacking faults, so that the quality of the silicon carbide single crystal is seriously affected, and the quality of an epitaxial layer and the performance of a device are further affected; in addition, as the silicon carbide raw material is carbonized, the gas phase component of the crystal interface is changed, the proportion of carbon is gradually increased, and the change of the gas phase component induces polytype, which is unfavorable for growing the crystal with large thickness. Therefore, solving the carbon inclusion defect has been an industry difficulty in silicon carbide crystal growth.

Disclosure of utility model

The application provides a silicon carbide crystal growth device, which aims to solve the problem that carbon inclusion defects appear in the later crystal growth period and influence the quality of silicon carbide crystals due to gradual carbonization of silicon carbide in the preparation process of the silicon carbide crystals.

In order to solve the technical problems, the application adopts a technical scheme that: a silicon carbide crystal growth apparatus is provided. The silicon carbide crystal growth apparatus includes: the crucible comprises a chamber, wherein the chamber comprises a crystal growth area and a raw material stacking area which are communicated with each other; a first heating member which is located outside the crucible and is provided around the raw material stacking area in the circumferential direction of the crucible; and the silicon-containing gas storage tank is positioned at the outer side of the crucible, is communicated with the raw material stacking area and is used for conveying silicon-containing gas to the raw material stacking area.

In some embodiments, further comprising:

The communicating pipe comprises an air inlet end and an air outlet end communicated with the air inlet end; the air inlet end is positioned at the outer side of the crucible and is communicated with the silicon-containing gas storage tank; the air outlet end penetrates through the bottom wall of the crucible and is communicated with the raw material stacking area; wherein the feedstock stacking zone is located between the crystal growth zone and the bottom wall.

In some embodiments, the port of the gas exit end is disposed proximate to and/or toward a sidewall of the crucible.

In some embodiments, the orthographic projection of the port of the gas outlet end on the bottom wall is located at a position of the bottom wall near the side wall of the crucible; and/or

In some embodiments, the outlet end passes through the bottom wall at a location proximate to the side wall and communicates with the material stacking region.

In some embodiments, the number of the gas outlet ends is plural, and the ports of the plural gas outlet ends are uniformly distributed in the material stacking area along the circumferential direction of the crucible.

In some embodiments, further comprising:

The filter screen is arranged at the port of the air outlet end.

In some embodiments, the silicon-containing gas storage tank is a silane storage tank, or an disilane storage tank, or a tetrachlorosilane storage tank, or a mixed gas storage tank of silane and disilane, or a mixed gas storage tank of silane and tetrachlorosilane, or a mixed gas storage tank of silane, disilane, and tetrachlorosilane; or the silicon-containing gas storage tank is a mixed gas storage tank of silane and inert gas, or a mixed gas storage tank of disilane and inert gas, or a mixed gas storage tank of tetrachlorosilane and inert gas, or a mixed gas storage tank of silane, disilane and inert gas, or a mixed gas storage tank of silane, tetrachlorosilane and inert gas, or a mixed gas storage tank of silane, disilane, tetrachlorosilane and inert gas.

In some embodiments, further comprising:

The flow control component is arranged at the air inlet end of the communicating pipe and can control the size of the airflow flow cross section of the air inlet end.

In some embodiments, further comprising:

And the second heating component is positioned outside the air inlet end of the communicating pipe and is arranged around the air inlet end along the circumferential direction of the air inlet end of the communicating pipe.

In some embodiments, the flow control member is located at a location of the gas inlet end proximate to the silicon-containing gas storage tank, and the second heating member is located at a location of the gas inlet end distal to the silicon-containing gas storage tank; the silicon-containing gas storage tank is disposed adjacent to the bottom wall of the crucible.

The beneficial effects of the embodiment of the application are different from the prior art: the silicon carbide crystal growth device provided by the embodiment of the application comprises a crucible, a first heating component and a silicon-containing gas storage tank, wherein the crucible comprises a cavity, and the cavity comprises a crystal growth area and a raw material stacking area which are mutually communicated; the first heating component is positioned at the outer side of the crucible and is arranged along the circumferential direction of the crucible around the raw material stacking area; the silicon-containing gas storage tank is positioned at the outer side of the crucible and communicated with the raw material stacking area and is used for conveying silicon-containing gas to the raw material stacking area; in this way, in the preparation process of the silicon carbide single crystal, the silicon-containing gas can be conveyed to the raw material stacking area through the silicon-containing gas storage tank, so that the proportion of silicon atmosphere in the silicon carbide raw material is improved, carbonization of the silicon carbide raw material is inhibited, further gas phase components are stabilized, the occurrence probability of crystal carbon wrapping and polytype problems is reduced, and the yield of the silicon carbide single crystal is improved.

Drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to designate like parts throughout the accompanying drawings. In the drawings:

FIG. 1 is a schematic view of a silicon carbide crystal growth apparatus containing a silicon carbide feedstock in accordance with an embodiment of the present application;

FIG. 2 is a schematic view of the silicon carbide crystal growth apparatus of FIG. 1;

FIG. 3 is a schematic view of a silicon carbide crystal growth apparatus according to another embodiment of the present application;

FIG. 4 is a schematic view of a silicon carbide crystal growth apparatus containing a silicon carbide feedstock according to another embodiment of the present application;

Fig. 5 is a schematic view showing a structure of a silicon carbide crystal growth apparatus containing a silicon carbide raw material according to still another embodiment of the present application.

Description of the reference numerals

1-A crucible; 11-chamber; 12-a bottom wall; 13-sidewalls; 2-a first heating element; 3-a silicon-containing gas storage tank; 4-seed crystal; a 5-silicon carbide feedstock; 6-communicating pipe; 61-an air inlet end; 62-an air outlet end; 7, a filter screen; 8-a flow control component; 9-a second heating element.

Detailed Description

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.

The terms "first," "second," "third," and the like in this disclosure are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", and "a third" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise. All directional indications (such as up, down, left, right, front, back … …) in the embodiments of the present application are merely used to explain the relative positional relationship, movement, etc. between the components in a particular gesture (as shown in the drawings), and if the particular gesture changes, the directional indication changes accordingly. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

The present application will be described in detail with reference to the accompanying drawings and examples.

Referring to fig. 1 to 2, fig. 1 is a schematic diagram illustrating a silicon carbide crystal growth apparatus containing a silicon carbide raw material according to an embodiment of the present application; FIG. 2 is a schematic view of the silicon carbide crystal growth apparatus of FIG. 1. In the present embodiment, there is provided a silicon carbide crystal growth apparatus which can be used for producing a silicon carbide single crystal, the production apparatus including a crucible 1, a first heating member 2, and a silicon-containing gas storage tank 3.

Wherein the crucible 1 comprises a chamber 11; the chamber 11 includes a crystal growth area and a raw material stacking area which are communicated with each other. Wherein a crystal growth area is located at the top of the chamber 11, the crystal growth area being for mounting the seed crystal 4 and crystal growth. The raw material stacking area is positioned at the bottom of the chamber 11 and is used for accommodating the silicon carbide raw material 5; the region between the raw material stacking region and the crystal growth region is formed as a sublimation region. The raw material depositing zone is located between the sublimation zone and the bottom wall 12 of the crucible 1.

The first heating means 2 is provided at least in correspondence with the raw material stacking region for heating the silicon carbide raw material 5 of the raw material stacking region to sublimate the silicon carbide and crystallize in the seed crystal 4 region. Wherein, the first heating part 2 can be arranged outside the crucible 1 and circumferentially surrounds the raw material stacking area along the circumference of the crucible 1 for circumferentially heating the silicon carbide raw material 5 in the raw material stacking area. Specifically, the first heating member 2 is disposed around the crucible 1 in a circle in the circumferential direction. Of course, the first heating member 2 may be provided inside the chamber 11 around the circumferential direction of the crucible 1; such as the inner surface of the side wall 13 of the chamber 11.

The silicon-containing gas storage tank 3 stores silicon-containing gas and communicates with the raw material stacking region of the chamber 11 for delivering the silicon-containing gas thereto. In this way, in the preparation process of the silicon carbide single crystal, the silicon-containing gas can be conveyed to the raw material stacking area through the silicon-containing gas storage tank 3, so that the proportion of the silicon atmosphere in the silicon carbide raw material 5 is improved, carbonization of the silicon carbide raw material 5 is inhibited, further gas phase components are stabilized, the occurrence probability of the problems of wrapping and polytype of the crystal carbon is reduced, and the yield of the silicon carbide single crystal is improved. The silicon-containing gas refers to a gas containing silicon element, such as silane gas, disilane gas, or tetrachlorosilane gas, or silane and disilane gas, or silane and tetrachlorosilane gas, or silane, disilane, and tetrachlorosilane gas.

In a specific embodiment, the silicon-containing gas storage tank 3 is in specific communication with the bottom wall 12 of the crucible 1; compared with the scheme that the silicon-containing gas is introduced into the silicon carbide raw material 5 from the other side of the silicon carbide raw material 5, the silicon-containing gas in the silicon-containing gas storage tank 3 can enter the silicon carbide raw material 5 from the side, away from the seed crystal 4, of the silicon carbide raw material 5, and as the distance between the surface, away from the seed crystal 4, of the silicon carbide raw material 5 and the surface, close to the seed crystal 4, of the silicon carbide raw material 5 is the largest in the vertical direction as shown in fig. 1, in the moving process of the silicon-containing gas in the silicon carbide raw material 5 from bottom to top (namely, the direction towards a crystal growth area, hereinafter referred to as the vertical direction), the contact time of the silicon-containing gas and the silicon carbide raw material 5 can be prolonged, so that the utilization rate of the silicon-containing gas is improved, and the silicon-containing gas is supplied to each position of the silicon-carbide raw material 5 in the vertical direction is reduced.

In particular, the silicon-containing gas reservoir 3 may be disposed proximate to the bottom wall 12 of the crucible 1.

In some embodiments, the silicon-containing gas may be a single component gas or a gas in which several components are mixed in proportion. Specifically, the silicon-containing gas storage tank 3 may be a silane storage tank, or an disilane storage tank, or a tetrachlorosilane storage tank, or a mixed gas storage tank of silane and disilane, or a mixed gas storage tank of silane and tetrachlorosilane, or a mixed gas storage tank of silane, disilane, and tetrachlorosilane.

In other embodiments, in order to adjust the concentration of the silicon-containing gas in the silicon-containing gas storage tank 3, the silicon-containing gas storage tank 3 may contain an inert gas such as helium (He) or argon (Ar) in addition to the silicon-containing gas. Thus, in this particular embodiment, the silicon-containing gas storage tank 3 may be a mixed gas storage tank of silane and inert gas, or a mixed gas storage tank of disilane and inert gas, or a mixed gas storage tank of tetrachlorosilane and inert gas, or a mixed gas storage tank of silane, disilane and inert gas, or a mixed gas storage tank 3 of silane, tetrachlorosilane and inert gas, or a mixed gas storage tank of silane, disilane, tetrachlorosilane and inert gas. Specifically, the storage tank 3 is a mixed gas storage tank of 10a.t.% silane gas and 90a.t.% Ar.

As shown in fig. 1, the manufacturing apparatus specifically further includes a communicating pipe 6, and the communicating pipe 6 includes an air inlet end 61 and an air outlet end 62 communicating with the air inlet end 61. The air inlet end 61 is positioned at the outer side of the crucible 1, and the air inlet end 61 is communicated with the silicon-containing gas storage tank 3; the gassing end 62 passes through the bottom wall 12 of the crucible 1 and communicates with the source material stacking area to communicate the silicon-containing gas storage tank 3 with the crucible 1.

In one embodiment, as shown in FIG. 1, the number of gas outlet ends 62 is one, and the silicon-containing gas storage tank 3 has a gas outlet; the bottom wall 12 of the crucible 1, i.e. the bottom wall 12 of the chamber 11, has an air inlet. The air inlet end 61 of the communicating pipe 6 passes through the air outlet and is communicated with the silicon-containing gas storage tank 3; the gas outlet end 62 communicates with the crucible 1 through a gas inlet to achieve communication between the silicon-containing gas storage tank 3 and the crucible 1.

In particular, the communication pipe 6 may be a hollow linear pipe. The communicating pipe 6 can be a graphite pipe, so that the communicating pipe 6 can be ensured to have certain high temperature resistance, and certain mechanical strength can be maintained at high temperature; while other impurities are not introduced.

In another embodiment, referring to fig. 3, fig. 3 is a schematic view of the structure of a silicon carbide crystal growth apparatus according to another embodiment of the present application; unlike the communicating tube 6 shown in fig. 1, the number of the gas outlet ends 62 is plural, and the plural gas outlet ends 62 are respectively communicated with different positions of the crucible 1 so as to simultaneously feed the silicon-containing gas into the crucible 1 through the plural gas outlet ends 62; compared with the scheme shown in fig. 1, the uniformity of the silicon-containing gas in the silicon carbide raw material 5 can be improved, and the carbonization proportion of each position of the silicon carbide raw material 5 and the probability of local silicon-rich defects in the silicon carbide raw material 5 can be reduced. Specifically, the ports of the plurality of gas outlet ends 62 are uniformly distributed in the raw material stacking area along the circumferential direction of the crucible 1.

In this particular embodiment, the bottom wall 12 of the crucible 1 has a plurality of spaced apart air inlets, one for each air outlet end 62, to communicate with the chamber 11 of the crucible 1 through the corresponding air inlet. In particular, the plurality of gas inlets may be uniformly distributed in the bottom wall 12 of the crucible 1 to further enhance the uniformity of the silicon-containing gas provided into the chamber 11 by the silicon-containing gas storage tank 3.

Wherein, the silicon carbide raw material 5 near the side wall 13 area of the chamber 11 loses silicon to a serious extent due to the higher temperature of the side wall 13 area of the chamber 11; thus, in one embodiment, as shown in FIG. 3, the port of the gas outlet end 62 is disposed proximate to and/or toward the sidewall of the crucible 1. Specifically, the orthographic projection of the port of the degassing end 62 on the bottom wall 12 of the crucible 1 is located at a position of the bottom wall 12 of the crucible 1 near the side wall 13 of the crucible 1; i.e. the orthographic projection of the degassing end 62 on the bottom wall 12 of the crucible 1 is positioned at the edge position of the bottom wall 12 of the crucible 1; in this way, the silicon-containing gas can be introduced from the region near the side wall 13 of the crucible 1 through the gas outlet end 62, so that the silicon-containing gas directly acts on the region of the silicon carbide raw material 5 where silicon loss is serious, and the efficiency of suppressing carbonization of the silicon carbide raw material 5 is higher.

Specifically, the gassing end 62 passes through the bottom wall 12 of the crucible 1 at a position near the side wall 13 of the crucible 1 and communicates with the source material stacking region.

Specifically, the distance between the orthographic projection of the gas outlet end 62 on the bottom wall 12 of the crucible 1 and the side wall 13 of the crucible 1 in the radial direction of the chamber 11 is less than or equal to 50mm; such as 10mm, 20mm, 30mm, 40mm or 50mm, etc.

In one embodiment, referring to fig. 4, fig. 4 is a schematic diagram of a silicon carbide crystal growth apparatus containing a silicon carbide feedstock in accordance with another embodiment of the present application. The silicon carbide crystal growth apparatus further comprises a filter screen 7, wherein the filter screen 7 is arranged at the port of the air outlet end 62 of the communicating pipe 6 and is used for preventing the silicon carbide raw material 5 from falling into the communicating pipe 6. The filter screen 7 is provided with a plurality of air holes, and the air holes on the filter screen 7 only allow the silicon-containing gas to pass through, but not allow the powder particles to pass through. Specifically, the pore diameters of the plurality of pores are smaller than the particle diameter of the silicon carbide raw material 5 placed in the raw material stacking area. The filter screen 7 may be a graphite filter screen in particular, so as to ensure that the filter screen 7 also has a certain high temperature resistance, so that a certain mechanical property is maintained at a high temperature.

Specifically, one air outlet end 62 is correspondingly provided with a filter screen 7. The filter screen 7 may cover the end face of the end of the communicating tube 6 where the air outlet end 62 is located; or the end part of the end of the air outlet end 62 of the communicating pipe 6; or a screen-like window is fitted to the inner wall surface of the communication pipe 6 near the outlet end 62, etc.

In one embodiment, referring to fig. 5, fig. 5 is a schematic diagram of a silicon carbide crystal growth apparatus containing a silicon carbide feedstock in accordance with yet another embodiment of the present application. The silicon carbide crystal growth apparatus further comprises a flow control member 8 and/or a second heating member 9.

The flow control member 8 is provided at the inlet end 61 of the communication pipe 6, and controls the size of the airflow cross section of the inlet end 61 of the communication pipe 6. In some embodiments, flow control member 8 may control the size of the flow cross section of the air flow passing through the air inlet end of communication tube 6 to be 0.1-1000sccm; such as 1sccm, 10sccm, 50sccm, 100sccm, 300sccm, 500sccm, 700sccm, etc.

Specifically, the flow rate control member 8 is provided at the intake end 61 of the communication pipe 6.

In one embodiment, taking the silicon carbide raw material 5 as an example, the crystal growth period is 100 hours, the flow rate control means 8 controls the flow rate of the communication pipe 6 to be 100sccm within 20 hours, 150sccm between 20 hours and 40 hours, 150sccm between 40 hours and 60 hours, 200sccm between 60 hours and 80 hours, and 200sccm between 80 hours and 100 hours.

In particular, the flow control member 8 may be any control member known to control the amount of gas or liquid flow, such as a flow control valve.

The second heating member 9 is provided corresponding to the gas inlet end 61 of the communicating tube 6 and downstream of the flow control member 8 for heating the silicon-containing gas flowing through the communicating tube 6. In this way, the occurrence of condensation of the silicon-containing gas in the communication tube 6 can be reduced, and further transport of the silicon-containing gas into the chamber 11 can be accelerated. Meanwhile, the second heating component 9 is used for heating the silicon-containing gas in advance, so that the reactivity of the silicon-containing gas can be improved, and the carbonization inhibition efficiency of the silicon-containing gas can be improved; and the influence of external gas entering the crucible 1 on the thermal field inside the crucible 1 can be reduced, which is beneficial to stabilizing the crystal growth environment.

Wherein "downstream" means downstream of the flow control member 8 in the flow direction S of the silicon-containing gas within the communication tube 6; it will be appreciated that the silicon-containing gas passing through the flow control means 8 will pass further through the second heating means 9.

The second heating member 9 may be provided outside the communication tube 6 and around the gas inlet end 61 in the circumferential direction of the gas inlet end 61 of the communication tube 6 for circumferential heating of the silicon-containing gas in the communication tube 6. Specifically, the second heating member 9 may be disposed around the circumference of the communication pipe 6. Of course, the second heating member 9 may be provided inside the communication pipe 6 around the circumferential direction of the communication pipe 6; for example, is provided on the inner surface of the side wall 13 of the communication pipe 6.

In one embodiment, the flow control member 8 is located at a portion of the gas inlet end 61 near the silicon-containing gas storage tank 3, and the second heating member 9 is located at a portion of the gas inlet end 61 remote from the silicon-containing gas storage tank 3.

The first heating member 2 and/or the second heating member 9 may be selected from one of a resistive heating coil, an inductive heating coil, an arc heating coil, an electron beam heating coil, an infrared heating coil, and a dielectric heating coil. The induction heating coil can be one of an intermediate frequency coil or a high frequency coil. The heating power of the first heating element 2 and/or the second heating element 9 may be 1 kw-100 kw; such as 10 kw, 20 kw, 30 kw, 40 kw, 50 kw, 70 kw, 90 kw, etc.

In a specific embodiment, the apparatus for preparing the silicon carbide raw material 5 further includes a controller (not shown), where the first heating component 2 and the second heating component 9 are respectively electrically connected to the controller, and the controller is used to control the first heating component 2 and the second heating component 9 to be turned on and to perform heating according to respective corresponding preset heating parameters. The preset heating parameters can be set in advance according to actual requirements.

The silicon carbide crystal growth device provided by the embodiment comprises a crucible 1, a first heating component 2 and a silicon-containing gas storage tank 3, wherein the crucible 1 comprises a cavity, and the cavity comprises a crystal growth area and a raw material stacking area which are communicated with each other; the crystal growth area is provided with seed crystals 4; the raw material stacking area is used for accommodating silicon carbide raw materials 5; the first heating component 2 is positioned on the outer side of the crucible 1, is arranged along the circumferential direction of the crucible 1 and surrounds the raw material stacking area, and is used for heating the silicon carbide raw material 5 in the raw material stacking area so as to sublimate the silicon carbide raw material 5 to the seed crystal 4 for crystallization; the silicon-containing gas storage tank 3 is positioned at the outer side of the crucible 1 and communicated with the raw material stacking area for conveying silicon-containing gas to the raw material stacking area; in this way, in the preparation process of the silicon carbide single crystal, the silicon-containing gas can be conveyed to the raw material stacking area through the silicon-containing gas storage tank 3, so that the proportion of the silicon atmosphere in the silicon carbide raw material 5 is improved, carbonization of the silicon carbide raw material 5 is inhibited, further gas phase components are stabilized, the occurrence probability of the problems of wrapping and polytype of the crystal carbon is reduced, and the yield of the silicon carbide single crystal is improved.

The foregoing is only the embodiments of the present application, and therefore, the patent scope of the application is not limited thereto, and all equivalent structures or equivalent processes using the descriptions of the present application and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the application.

Claims

1. A silicon carbide crystal growth apparatus, comprising:

The crucible comprises a chamber, wherein the chamber comprises a crystal growth area and a raw material stacking area which are communicated with each other;

A first heating member which is located outside the crucible and is provided around the raw material stacking area in the circumferential direction of the crucible;

And the silicon-containing gas storage tank is positioned at the outer side of the crucible, is communicated with the raw material stacking area and is used for conveying silicon-containing gas to the raw material stacking area.

2. The silicon carbide crystal growth apparatus according to claim 1, further comprising:

3. A silicon carbide crystal growth apparatus according to claim 2, wherein the port of the gas outlet end is located adjacent to and/or towards the side wall of the crucible.

4. A silicon carbide crystal growth apparatus according to claim 3, wherein the orthographic projection of the port of the gas outlet port on the bottom wall is located at a position of the bottom wall adjacent to the side wall of the crucible;

and/or the number of the groups of groups,

The air outlet end passes through the position of the bottom wall, which is close to the side wall, and is communicated with the raw material stacking area.

5. The silicon carbide crystal growth apparatus according to claim 4, wherein the number of the gas outlet ends is plural, and the ports of the plural gas outlet ends are uniformly distributed in the raw material stacking region in the circumferential direction of the crucible.

6. The silicon carbide crystal growth apparatus according to claim 2, further comprising:

The filter screen is arranged at the port of the air outlet end.

7. A silicon carbide crystal growth apparatus according to claim 1,

The silicon-containing gas storage tank is a silane storage tank, or an disilane storage tank, or a tetrachlorosilane storage tank, or a mixed gas storage tank of silane and disilane, or a mixed gas storage tank of silane and tetrachlorosilane, or a mixed gas storage tank of silane, disilane and tetrachlorosilane;

Or alternatively

The silicon-containing gas storage tank is a mixed gas storage tank of silane and inert gas, or a mixed gas storage tank of disilane and inert gas, or a mixed gas storage tank of tetrachlorosilane and inert gas, or a mixed gas storage tank of silane, disilane and inert gas, or a mixed gas storage tank of silane, tetrachlorosilane and inert gas, or a mixed gas storage tank of silane, disilane, tetrachlorosilane and inert gas.

8. The silicon carbide crystal growth apparatus according to claim 2, further comprising:

9. The silicon carbide crystal growth apparatus of claim 8, further comprising:

10. The silicon carbide crystal growth apparatus according to claim 9, wherein,

The flow control component is positioned at a part of the air inlet end, which is close to the silicon-containing gas storage tank, and the second heating component is positioned at a part of the air inlet end, which is far away from the silicon-containing gas storage tank;

The silicon-containing gas storage tank is disposed adjacent to the bottom wall of the crucible.