KR20150036785A - 발산광의 파장을 변환하는 균일한 필름-층 구조 및 이를 형성하는 방법 - Google Patents
발산광의 파장을 변환하는 균일한 필름-층 구조 및 이를 형성하는 방법 Download PDFInfo
- Publication number
- KR20150036785A KR20150036785A KR1020157005281A KR20157005281A KR20150036785A KR 20150036785 A KR20150036785 A KR 20150036785A KR 1020157005281 A KR1020157005281 A KR 1020157005281A KR 20157005281 A KR20157005281 A KR 20157005281A KR 20150036785 A KR20150036785 A KR 20150036785A
- Authority
- KR
- South Korea
- Prior art keywords
- phosphor
- layer
- particle layer
- way
- bonding
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 81
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 237
- 239000002245 particle Substances 0.000 claims abstract description 208
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000000843 powder Substances 0.000 claims abstract description 39
- 239000000203 mixture Substances 0.000 claims description 10
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 164
- 230000008569 process Effects 0.000 description 20
- 239000010408 film Substances 0.000 description 17
- 238000005538 encapsulation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- 238000007613 slurry method Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001652 electrophoretic deposition Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- PMMOTPQVYFQKNM-UHFFFAOYSA-N [Si].[Si].[P] Chemical compound [Si].[Si].[P] PMMOTPQVYFQKNM-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- FNCIDSNKNZQJTJ-UHFFFAOYSA-N alumane;terbium Chemical compound [AlH3].[Tb] FNCIDSNKNZQJTJ-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007600 charging Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010325 electrochemical charging Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- -1 sheet Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Led Device Packages (AREA)
- Laminated Bodies (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28479209P | 2009-12-26 | 2009-12-26 | |
US61/284,792 | 2009-12-26 | ||
PCT/US2010/062129 WO2011079325A1 (en) | 2009-12-26 | 2010-12-27 | Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020127016526A Division KR20120083936A (ko) | 2009-12-26 | 2010-12-27 | 발산광의 파장을 변환하는 균일한 필름-층 구조 및 이를 형성하는 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20150036785A true KR20150036785A (ko) | 2015-04-07 |
Family
ID=44196166
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020157005281A KR20150036785A (ko) | 2009-12-26 | 2010-12-27 | 발산광의 파장을 변환하는 균일한 필름-층 구조 및 이를 형성하는 방법 |
KR1020127016526A KR20120083936A (ko) | 2009-12-26 | 2010-12-27 | 발산광의 파장을 변환하는 균일한 필름-층 구조 및 이를 형성하는 방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020127016526A KR20120083936A (ko) | 2009-12-26 | 2010-12-27 | 발산광의 파장을 변환하는 균일한 필름-층 구조 및 이를 형성하는 방법 |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP2517272A4 (zh) |
JP (1) | JP5639662B2 (zh) |
KR (2) | KR20150036785A (zh) |
CN (1) | CN102812570A (zh) |
DE (1) | DE112010004424T5 (zh) |
GB (1) | GB2488936B (zh) |
TW (1) | TWI452733B (zh) |
WO (1) | WO2011079325A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9480125B2 (en) * | 2009-05-15 | 2016-10-25 | Achrolux Inc | Light-emitting structure and a method for fabricating the same |
TWI459600B (zh) * | 2012-07-06 | 2014-11-01 | Lextar Electronics Corp | 發光二極體封裝體及其製造方法 |
DE102012106949A1 (de) * | 2012-07-30 | 2014-01-30 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauteils |
CN103030097B (zh) * | 2012-12-12 | 2015-06-17 | 中北大学 | 基于静电场自聚焦的圆片级低维纳米结构的制备方法 |
TWI499094B (zh) * | 2013-01-25 | 2015-09-01 | Achrolux Inc | Led封裝件及其製法 |
CN108417698B (zh) * | 2016-07-06 | 2020-09-11 | 苏州星烁纳米科技有限公司 | 量子点封装体及其制备方法、发光装置和显示装置 |
JP6923820B2 (ja) * | 2018-10-31 | 2021-08-25 | 日亜化学工業株式会社 | パッケージの製造方法および発光装置の製造方法 |
CN113024251A (zh) * | 2019-12-09 | 2021-06-25 | 上海航空电器有限公司 | 具有平凹形结构薄膜的高显色性激光照明用荧光陶瓷及其制备方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL135549C (zh) * | 1966-04-22 | |||
US5019748A (en) * | 1986-12-12 | 1991-05-28 | E-Lite Technologies, Inc. | Method for making an electroluminescent panel lamp as well as panel lamp produced thereby |
CN1033902A (zh) * | 1987-12-30 | 1989-07-12 | 依莱特技术公司 | 电致发光板型灯及其制造方法 |
JPH11233832A (ja) * | 1998-02-17 | 1999-08-27 | Nichia Chem Ind Ltd | 発光ダイオードの形成方法 |
CN1147903C (zh) * | 1998-05-22 | 2004-04-28 | 三星电管株式会社 | 用于显示装置的荧光层的制造方法 |
US6635987B1 (en) * | 2000-09-26 | 2003-10-21 | General Electric Company | High power white LED lamp structure using unique phosphor application for LED lighting products |
JP2002216622A (ja) * | 2001-01-16 | 2002-08-02 | Harison Toshiba Lighting Corp | 蛍光ランプの製造方法 |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
JP2003197977A (ja) * | 2001-12-27 | 2003-07-11 | Okaya Electric Ind Co Ltd | 発光ダイオードの製造方法 |
US7224000B2 (en) * | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
US7585549B2 (en) * | 2003-07-09 | 2009-09-08 | Fry's Metals, Inc. | Method of applying a pattern of particles to a substrate |
JP4492378B2 (ja) * | 2005-02-03 | 2010-06-30 | 豊田合成株式会社 | 発光装置およびその製造方法 |
US8563339B2 (en) * | 2005-08-25 | 2013-10-22 | Cree, Inc. | System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices |
US7344952B2 (en) * | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
JP2008060542A (ja) * | 2006-08-03 | 2008-03-13 | Toyoda Gosei Co Ltd | 発光装置、発光装置の製造方法、及びこれを備えた光源装置 |
JP4835333B2 (ja) * | 2006-09-05 | 2011-12-14 | 日亜化学工業株式会社 | 発光装置の形成方法 |
US9196799B2 (en) * | 2007-01-22 | 2015-11-24 | Cree, Inc. | LED chips having fluorescent substrates with microholes and methods for fabricating |
JP2008187089A (ja) * | 2007-01-31 | 2008-08-14 | Yuri Kagi Kofun Yugenkoshi | 発光ダイオードのランプフード |
US7999283B2 (en) * | 2007-06-14 | 2011-08-16 | Cree, Inc. | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
KR100973238B1 (ko) * | 2008-03-26 | 2010-07-30 | 서울반도체 주식회사 | 형광체 코팅방법 및 장치 그리고 형광체 코팅층을 포함하는led |
TWI508331B (zh) * | 2008-11-13 | 2015-11-11 | Maven Optronics Corp | 用於形成螢光轉換型發光元件之薄膜螢光層的系統及方法、以及用於螢光轉換型發光元件之薄膜螢光層 |
US8247248B2 (en) * | 2009-05-15 | 2012-08-21 | Achrolux Inc. | Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure |
US9480125B2 (en) * | 2009-05-15 | 2016-10-25 | Achrolux Inc | Light-emitting structure and a method for fabricating the same |
-
2010
- 2010-12-27 KR KR1020157005281A patent/KR20150036785A/ko active Search and Examination
- 2010-12-27 CN CN2010800582587A patent/CN102812570A/zh active Pending
- 2010-12-27 GB GB1210550.8A patent/GB2488936B/en not_active Expired - Fee Related
- 2010-12-27 KR KR1020127016526A patent/KR20120083936A/ko active Application Filing
- 2010-12-27 DE DE112010004424T patent/DE112010004424T5/de not_active Withdrawn
- 2010-12-27 EP EP10840212.4A patent/EP2517272A4/en not_active Withdrawn
- 2010-12-27 TW TW099146216A patent/TWI452733B/zh not_active IP Right Cessation
- 2010-12-27 WO PCT/US2010/062129 patent/WO2011079325A1/en active Application Filing
- 2010-12-27 JP JP2012546252A patent/JP5639662B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20120083936A (ko) | 2012-07-26 |
TW201135982A (en) | 2011-10-16 |
TWI452733B (zh) | 2014-09-11 |
GB201210550D0 (en) | 2012-07-25 |
WO2011079325A1 (en) | 2011-06-30 |
JP2013516074A (ja) | 2013-05-09 |
GB2488936A (en) | 2012-09-12 |
EP2517272A4 (en) | 2015-04-08 |
EP2517272A1 (en) | 2012-10-31 |
GB2488936B (en) | 2015-03-25 |
DE112010004424T5 (de) | 2012-11-08 |
JP5639662B2 (ja) | 2014-12-10 |
CN102812570A (zh) | 2012-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20150036785A (ko) | 발산광의 파장을 변환하는 균일한 필름-층 구조 및 이를 형성하는 방법 | |
KR101351337B1 (ko) | Led 봉지재 구조체에 균일한 형광 재료층을 형성하는 방법 | |
TWI476959B (zh) | 轉移均勻螢光層至一物件上之方法及所製得之發光結構 | |
TWI442604B (zh) | 發光結構及其製法 | |
KR101404911B1 (ko) | 발광 디바이스의 제조 방법 | |
KR101658446B1 (ko) | 형광체 수지 필름 제조방법 및 이에 의해 제조된 형광체 수지 필름 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment |