WO2011079325A1 - Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same - Google Patents
Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same Download PDFInfo
- Publication number
- WO2011079325A1 WO2011079325A1 PCT/US2010/062129 US2010062129W WO2011079325A1 WO 2011079325 A1 WO2011079325 A1 WO 2011079325A1 US 2010062129 W US2010062129 W US 2010062129W WO 2011079325 A1 WO2011079325 A1 WO 2011079325A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- phosphor particles
- phosphor
- binder
- particles
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 76
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 238
- 239000002245 particle Substances 0.000 claims abstract description 201
- 239000011230 binding agent Substances 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 65
- 239000000843 powder Substances 0.000 claims abstract description 39
- 239000000203 mixture Substances 0.000 claims description 12
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 160
- 239000010408 film Substances 0.000 description 18
- 229920001296 polysiloxane Polymers 0.000 description 14
- 238000005538 encapsulation Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 238000000576 coating method Methods 0.000 description 7
- 238000007613 slurry method Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000007786 electrostatic charging Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 3
- 239000004416 thermosoftening plastic Substances 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001652 electrophoretic deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920005596 polymer binder Polymers 0.000 description 2
- 239000002491 polymer binding agent Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- FNCIDSNKNZQJTJ-UHFFFAOYSA-N alumane;terbium Chemical compound [AlH3].[Tb] FNCIDSNKNZQJTJ-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010325 electrochemical charging Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- -1 sheet Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Definitions
- This invention relates to methods of forming uniform film structures, and, more particularly, to a uniform film-layered structure that converts the wavelength of light emitted by a light emitted diode and a method for forming the uniform film-layered structure.
- the present invention relates generally to material processing and optical apparatus techniques. More particularly, embodiments of the present invention provide methods and systems for forming a uniform layer of material that can be used in an optical device, such as a phosphor layer for a lens in an LED device.
- phosphor refers to any luminescent materials, which absorb light of one wavelength and emit light of a different wavelength. In this usage, “phosphor” and “wavelength conversion material” are used interchangeably. Phosphor materials have been widely used in LED package for producing white light, or various colors of light (e.g. phosphor-converted green or red) with blue pump LEDs.
- the conventional methods of depositing a phosphor material over a blue LED chip or package assembly include:
- phosphor particles are dispersed into silicone, epoxy or solvent filler material to form a phosphor mixture, applying said phosphor mixture to LED surface or package lens material by various techniques such as spray coating, dipping coating, dispensing, phosphor-in-cup, or over molding on a support structure and so on.
- EPD Electrophoretic deposition
- the slurry method usually forms a particle layer with varying thickness, which results in inconsistency of color points, and poor color uniformity of phosphor-converted LED to LED. Further, even forming a uniform layer of phosphor layer on non-flat surface with these conventional methods is difficult. It becomes very challenge for the conventional methods to meet requirements in the lighting application.
- the present invention provides manufacturing methods at high production rate for depositing uniform phosphor particles layer onto a wide variety of LED encapsulation structures or LED chip. Some of the embodiments in the present invention can be applied for coating phosphor on a LED secondary optics as well.
- phosphor refers to any luminescent materials, which absorb light of one wavelength and emit light of a different wavelength.
- the present invention provides a method for forming a uniform film structure.
- the method comprises: providing a first surface of an anticle; forming on the first surface at least a layer of phosphor particles in a manner that none of the phosphor particles is completely separate from adjacent ones; and forming on the layer of phosphor particles a first binder layer to secure the layer of phosphor particles.
- the first binder layer is a layer of binder particles.
- the present invention further provides another of forming a uniform film structure.
- the another method comprises: providing a first surface; forming on the first surface at least a layer of phosphor particles that include phosphor powders and a binder material; and binding the phosphor particles.
- the phosphor particles comprise the phosphor powders and the binder material
- the phosphor particles are a mixture of the phosphor powders and the binder material, or are formed by encapsulating the phosphor powders with the binder material, wherein binding the phosphor particles includes heating the binder material so as to bind the phosphor particles, and wherein the phosphor powders occupy more than 75% in volume of the layer of the phosphor particles in which the phosphor particles are bound.
- the method may further comprises forming on the layer of phosphor particles a first binder layer and heating the binder material and the first binder layer, to secure the layer of phosphor particles.
- the first surface of the article is provided by a viscous second binder layer.
- the first binder layer is a moisture resistant layer such as parylene.
- the method may further comprise transferring the secured layer of phosphor particles on or above a second surface of another article, or transferring the layer of cured phosphor particles on or above a second surface of another article.
- the second surface may be a surface of an LED lens, a secondary optics, an LED package, an LED chip or an LED wafer.
- the first binder layer may have a surface that is not in contact with the layer of phosphor particles that has a lens profile.
- the phosphor particles comprises the phosphor powders and the binder material
- the first binder layer may also have a surface with a lens profile and not in contact with the layer of phosphor particles.
- the present invention further provides a uniform film-layered structure that converts the wavelength of emitted light.
- the structure comprises a first binder layer; and a layer of phosphor particles that is formed on and secured to the first binder layer, the phosphor particles comprising phosphor powders and a binder material, the phosphor powders occupying more than 75% in volume of the layer of phosphor particles.
- the first binder layer is a moisture resistant layer such as parylene.
- the structure further comprises a carrier connected via the first binder layer to the layer of phosphor particles, wherein the binder layer is between the carrier and the layer of phosphor particles, and the carrier is an LED lens, a secondary optics, an LED package, an LED chip or an LED wafer.
- the first binder layer has a surface with a lens profile and not in contact with the layer of phosphor particles.
- embodiments of the invention provide methods and systems to form a substantially uniform film structure on LED package surface or surface of secondary optics or surface of LED die or LED surface can overcome the above-mentioned problems of the prior art, and can one or more of the following steps:
- FIGS. 1A and IB are schematic diagrams of a method for forming a uniform film structure of a first embodiment according to the present invention
- FIG. IB' is a schematic diagram of a first bonding layer that is a bonding particle layer
- FIG. 2 is a schematic diagram of a method for forming a uniform film structure of a second embodiment according to the present invention
- FIGS. 3 A and 3B are schematic diagrams of a method for forming a uniform film structure and its structure of a third embodiment according to the present invention.
- FIG. 4 shows a method of transferring a layer of phosphor particles on or above a desired second surface
- FIGS. 5A-5C are schematic diagrams illustrating a layer of phosphor particles transferred by a mold
- FIGS. 6A-6C are schematic diagrams illustrating a layer of phosphor particles that is transferred on various surfaces
- FIG. 7 is a schematic diagram of a first surface array for mass production
- FIGS. 8 A and 8B are cross-sectional views of a method and device that applies isotropic pressures between two surfaces.
- FIGS. 9A-9D illustrate phosphor particle packing structures according to embodiments of the present invention in comparison with phosphor distribution formed by slurry methods.
- FIGS. 1A and IB are schematic diagrams of a method for forming a uniform film structure of a first embodiment according to the present invention.
- the method comprises: forming on a first surface 101 of a mold at least a layer of phosphor particles 10 having phosphor particles that are constituted by phosphor powders; and forming on the layer of phosphor particles 10 a first binder layer 12 to secure the layer of phosphor particles 10.
- Phosphors are used for converting or altering light wavelength, e.g., for LED-based light sources.
- Common phosphors for these purposes include yttrium aluminum garnet (YAG) materials, terbium aluminum garnet (TAG) materials, ZnSeS+ materials, and silicon aluminum oxynitride (SiAION) materials (such as . a-SiAION), etc.
- YAG yttrium aluminum garnet
- TAG terbium aluminum garnet
- ZnSeS+ materials ZnSeS+ materials
- silicon aluminum oxynitride (SiAION) materials such as . a-SiAION
- any material that converts or alters wavelength of incident light can be used as a phosphor material.
- the term "phosphor" represents all materials that are capable of converting or altering a wavelength of light to another wavelength, including mixture or combination of different wavelength converting or wavelength altering materials.
- the phosphor particles indicate powder-formed
- Forming a substantially uniform layer of phosphor particles 10 is critical for achieving high quality of light conversion.
- an electrostatic charging process is adopted for deposition of a substantially uniform layer of phosphor on the first surface 101 such as a mold, as illustrated in FIG. 1A. Details of electrostatic charging process for forming uniform layers of phosphor particles can be referred to US Patent Application No. 12/587,290, which is incorporated by reference herein.
- the layer of phosphor particles 10 is formed by forming electrostatic charges on a first surface 101 and moving the first surface 101 to be close to and attract the phosphor particle, to form the layer of phosphor particles 10.
- the electrostatic charging process is carried out in a nonliquid environment, which is different from the conventional electrochemical charging process in a slurry environment.
- the deposition process does not require keeping the even distribution of particle powders and binders in liquid suspension form, and doe not suffer this problem. Instead, in some embodiments, particle powders and binder materials are separately formed on or applied to the first surface of the mold.
- the electrostatic charge process applied in the present invention can accurately control packing density and layer thickness of phosphor particles.
- the coating process is repeatable on the same surface to create a single or multiple uniform particle containing layers of luminescent materials on a hemispherical surface, concave or convex surface of different shapes, or flat surfaces.
- particle layers with a high packing density are formed and uniformly distributed on the surface of an article or element.
- the phosphor particles attracted in a single layer may comprise different types of phosphor powders, i.e., phosphor powders having different colors.
- the different types of phosphor powders may also formed on different layers.
- the process may be repeatable for multi-layered of phosphor particles.
- the layer of phosphor particles may comprise phosphor particles and other filling particles.
- the first binder layer 12 may be a curable material, such as silicone, epoxy, glass, softens, or any suitable material for LED encapsulation.
- a thin film such as a dielectric layer may be deposited over the layer of phosphor particles.
- a dielectric layer e.g., Si02 layer, or parylene may be deposited using CVD, PVD, electro beam evaporation or other deposition methods.
- the deposited layer coats the internal region of the layer of phosphor particle, such as voids between the phosphor particles.
- the first binder layer is formed on the layer of phosphor particles, to provide sufficient binding force during subsequent processes.
- One of the advantages of using a dielectric film to secure particles is that refractive index of the deposited film is adjustable for index matching to maximize light extraction.
- the dielectric material film is preferred to be deposited at low processing temperatures, so that the film is fairly porous.
- the porous dielectric film is sufficient to hold particles to eliminate particle movement during subsequent processes, and also allows adhesive material, which is used to attach particles to LED encapsulations, penetrating through to fill up voids within particle powders.
- the first binder layer 12 may also have high thermal conductivity to facilitate heat dissipation efficiency from the layer of phosphor particles.
- the first binder layer 12 may have strong moisture resistance to prevent phosphor or LED from degradation during wet/hot operation conditions.
- the first binder layer 12 is a layer of binder particles 12a.
- the binder particles such as silicone or epoxy compounds or thermoplastic or glass may be attracted on the top surface of the layer of phosphor particles 10.
- the attraction of binder particles may be used electrostatic charging process as the above described for forming phosphor particle layer.
- the first surface 101 may be optionally heated up at predetermined temperature during binder attraction process. This is to soften the binder particles 12a as soon as being in contact with layer of phosphor particles 10 on the first surface 101.
- the layer of phosphor particles 10 on the first surface of the mold and the binder particles 12a may be cured at a predetermined temperature to bind phosphor particles to each other.
- FIG. 2 is a schematic diagram of a method for forming a uniform film structure of a second embodiment according to the present invention.
- the second embodiment differs from the first embodiment only in that the first surface 101 of the mold in the second embodiment is provided by a viscous second binder layer 14. Specifically, the layer of phosphor particles 10 is formed on a surface of the second binder layer 14 (i.e., the first surface), and is sandwiched between the first binder layer 12 and the second binder layer 14.
- the second binder layer 14 may have the same material, formation method and aspects as previously described.
- FIGS. 3A and 3B are schematic diagrams of a method for forming a uniform film structure and its structure of a third embodiment according to the present invention.
- the method comprises: forming on the first surface 101 at least a layer of phosphor particles 10' that include phosphor powders and a binder material; and binding the phosphor particles.
- pre-coated phosphor particles are prepared.
- the phosphor particles are a mixture of the phosphor powders 10a and a binder material 10b, or are coated with the polymer binder material 10b, such as silicone, epoxy, thermosetting or thermoplastic.
- the phosphor particles may be coated with the polymer binder material in a rolling suspension, and then dry out the solvent to form powders.
- the binder coating process may be performed in the way similar to forming polymer molding compounds where combining polymers and additives to obtain a mixture of necessary physical and chemical properties.
- phosphor particles can be treated as filler material.
- the phosphor-polymer mixture may be manufactured into liquid, rubber, sheet, solid or powder form depending on chosen process techniques.
- One of the advantages of the pre-coated phosphor particles is the ease of manufacturing process for phosphor deposition process over LED chip surface or onto LED encapsulation structure, which can be achieved even with existing molding process techniques.
- the layer of phosphor particles is formed by forming on the first surface 101 electrostatic charges; and moving the first surface 101 to be close to and attract the pre-coated phosphor particles, so as to form the layer of phosphor particles.
- the pre-coated phosphor particles may be charged with electrostatic charges or non-charged, and then attracted on the first surface 101 which may be charged with electrostatic charges. Heating up to soften the binder material can bind the phosphor particles.
- the phosphor powders occupy more than 75% in volume of the layer of phosphor particles in which the phosphor particles are bound.
- the first surface 11 is then heated up to a predetermined temperature to cure the binder material.
- the phosphor particles are then bound to each other, and can effectively eliminate particle movement during the subsequent processes.
- a first binder layer 12 is further formed on the layer of phosphor particles, as shown in FIG. 3B.
- the first binder layer is parylene. Then, the binder material 10b and the first binder layer 12 are heated up, to secure the layer of phosphor particles 10'.
- the coating process is repeatable on the same surface to create a single or multiple uniform particle containing layers of luminescent materials on a hemispherical surface, concave or convex surface of different shapes, or flat surfaces.
- particle layers with a high packing density are formed and uniformly distributed on the surface.
- the phosphor particles attracted in a single layer may comprise different types of phosphor powders, i.e., phosphor powders having different colors.
- the different types of phosphor powders may also formed on different layers of different colors.
- the process may be repeatable for multi-layered of phosphor particles.
- the layer of phosphor particles may comprise phosphor particles and other filling particles.
- the present invention further provides a uniform film-layered structure that converts the wavelength of emitted light.
- the uniform film-layered structure comprises a first binder layer 12, and a layer of phosphor particles 10' that is formed and secured on the first binder layer, the phosphor particles comprising phosphor powders and a binder material, and the phosphor powders occupying more than 75% in volume of the layer of phosphor particles.
- FIGS. 4 and 5 illustrate a method of forming a uniform film structure of a fourth embodiment according to the present invention.
- the method transfers the layer of phosphor particles on or above a desired second surface of a device or article.
- the cured layer of phosphor particles in the first or second embodiment, or the layer of phosphor particles in which the phosphor particles are bound in the third embodiment is transferred on or above the second surface of another device or article.
- the first surface 101 is pressed against to the second surface 102 with an appropriate glue layer 5 under a certain pressure to form phosphor layers on the second surface 102, and cured at a predetermined temperature.
- the second surface 102 is a surface of an LED lens, which is a lens that transfers the layer of phosphor particles on the second surface 102, and is, as a whole, called a transfer lens.
- the second surface 102 may also be a surface of a secondary optics, an LED package, an LED die or an LED wafer.
- the second surface 102 and/or other surfaces of the LED lens may be coated with a moisture resistant film such as parylene.
- the glue layer 5 may be the first binder layer 12 of FIG. 3. Accordingly, the first binder layer 12 needs to be cured only during the transfer step.
- a uniform film-layered structure obtained by the method that converts the wavelength of emitted light further includes a carrier of the second surface 102.
- the carrier is an LED lens, a secondary optics, an LED package, an LED die or an LED wafer.
- the carrier is connected to the layer of phosphor particles 10 via the first binder layer 12 ( or the glue layer 5). Accordingly, the first binder layer 12 is between the carrier and the layer of phosphor particles 10.
- the carrier is an LED lens, and the LED lens is coated with a moisture resistant film such as parylene.
- FIG. 5 illustrates another method of transferring the layer of phosphor particles on the second surface 102 of another device or element.
- the first surface 101 may be one of the surface of a first mold 51, as shown in FIGS. 5A-5C.
- a molding chamber formed when the first mold 51 is engaged with a second mold 52 may be filled with a heat-curable material 6, such as silicone, epoxy or even thermoplastic or glass that can be melted and reformed at a raised temperature.
- the first mold 51 and the second mold 52 may be formed of metal or non-conductive material.
- the first mold 51 with the layer of phosphor particles 10 (or 10') is pressed against to a second mold 52, so that the layer of phosphor particles 10 is implemented into a chamber that is in the shape of a lens.
- the layer of phosphor particles 10 is still held on the surface of the surface of the first mold 51 , so the distribution of the phosphor particles is not disturbed during compression process.
- the mold is heated to harden the heat-curable material 6, and then the first mold 51 and the second mold 52 are separated, as shown in FIG. 5C. After the separation, the layer of phosphor particles 10 is formed on the surface of encapsulation such as lens.
- the lens shown in FIG. 5C is also an aspect of a transfer lens.
- the steps of FIGS. IB and 5A-5C may be integrated to complete the first binder layer, so as to obtain the first binder layer having a lens profile.
- the first binder layer has a surface not in contact with the layer of phosphor particles 10 that has the lens profile.
- the heat-curable material 6 may be directly connected on the layer of phosphor particles 10 to act as the first binder layer. Accordingly, a surface 6a of the first binder layer that is not contact with the layer of phosphor particles 10 may also have a lens profile. In a uniform film-layered structure that converts the wavelength of emitted light, the surface of the first binder layer that is not in contact with the layer of phosphor particles 10 has a lens profile.
- Concave surface e.g. inner surface of lens or cover, as illustrated in FIG. 6A;
- the first surface 101 in a fifth embodiment may be configured into an array for mass production.
- the head surface of the first surface 101 may be shaped to a contour corresponding phosphor layer on encapsulation surface according to the present invention.
- methods of applying isotropic pressure between two surfaces is provided. These methods can be used in transferring a phosphor layer on a curved surface, such as the secured layer of phosphor particles 10 as shown in FIG. 1 to another curved encapsulation surface for providing normal pressure between the two surfaces and without a shear force.
- an expandable material 81 is disposed inside a curved surface layer of a holder 80.
- the outer surface of the head 82 is a flexible material such as silicone, which is expandable according to the expandable material 81 inside the holder 80.
- a layer of phosphor particles 10 is formed on the curved surface layer using, e.g., one of the methods described above.
- the curved surface layer is positioned adjacent to a receiving surface, e.g., a lens or an encapsulation material.
- the temperature of the expandable material is raised, causing the phosphor layer to be pressed against the receiving surface.
- the pressure between the two surfaces causes the phosphor layer to be transferred to the receiving surface.
- the distance between the two surfaces is selectable.
- the two surfaces can be in contact. In another example, there can be a space between the two surfaces. The spaced can be a few microns to 200 microns or larger. In either case, the expandable material 81 is configured to cause a substantially uniform pressure between the two surfaces. Examples of the expandable material 81 include expancel, other suitable material that expands at elevated temperatures, or combination of materials.
- the phosphor layer 10 is on a convex surface, which can be pushed out by the expandable material 81.
- the layer of phosphor particles 10 is in a concave surface as illustrated in FIG. 8B, which can be pushed inwards by a layer of the expandable material disposed on the outside of the layer of phosphor particles 10.
- Applying a normal force to surface is essential to eliminate shear force, which may cause distortion of particle distribution formed on the surface of presser tool during particle attachment to encapsulation surface.
- the presser head 82 is made of an expansible material such as silicone.
- An expansion vessel is embedded in the inside of the presser head 82.
- the expansion vessel may be filled with liquid or expancel or liquid together with expancel.
- phosphor particles are formed a uniform layer on the head region.
- a fiber-guided blue LED may be installed inside the presser head to in-situ monitor the amount of phosphor powder attracted on the presser head for a desired color point.
- the tool head with phosphor particles is then pressed again the encapsulation surface meanwhile the tool head is expanded by heating up, or injecting air into the head.
- the presser head provides an isotropic force, normal to the surface of encapsulation, eliminating particle movement during the curing process.
- a similar method of providing isotropic force for transferring the layer of phosphor particles to another surface can be applied for various surface with an appropriate design of expansion head, such as head design for concave surface as shown in FIG. 8B.
- FIGS. 9A-9D illustrate phosphor particle packing structures according to embodiments of the present invention in comparison with phosphor distribution formed by slurry methods.
- phosphor particles 18 are highly packed on surface.
- the phosphor powders occupy more than 75% in volume of the layer of phosphor particles. This is difficult to be realized with slurry methods in which phosphor particles are distributed within phosphor mixture, phosphor-silicone mixture as illustrated in FIG. 9B.
- Such high density packed phosphor as illustrated in FIG. 9A can enhance heat dissipation generated from light conversion within phosphor particles.
- the generated heated can be dissipated through particles connected with one another, instead of passing through silicone between particles in the slurry method which still needs solvent filler material to form a phosphor mixture.
- the enhanced heat dissipation can also increase conversion efficiency, and improve light degradation from heat.
- different phosphors can be deposited in layered structure as illustrated in FIG. 9C, Phosphor particles 19 is separated from phosphor particles 18 in a layer structure.
- different phosphor particles are distributed in silicone layer, phosphor-silicone mixture as illustrated in FIG. 9D.
- Such layered structure in FIG.9C according to embodiments of the present invention can enhance color quality by optimizing the ordering of different properties of phosphor particles to minimize light re-absorption between different optical properties of phosphor particles, enhancing light conversion efficiency as well.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Led Device Packages (AREA)
- Laminated Bodies (AREA)
- Luminescent Compositions (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012546252A JP5639662B2 (en) | 2009-12-26 | 2010-12-27 | Uniform film layer structure for converting emission wavelength and method for forming the same |
DE112010004424T DE112010004424T5 (en) | 2009-12-26 | 2010-12-27 | Uniform film layer structure that converts the wavelength of emitted light, and methods of forming the same |
CN2010800582587A CN102812570A (en) | 2009-12-26 | 2010-12-27 | Uniform Film-layered Structure That Converts The Wavelength Of Emitted Light And Method For Forming The Same |
EP10840212.4A EP2517272A4 (en) | 2009-12-26 | 2010-12-27 | Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same |
GB1210550.8A GB2488936B (en) | 2009-12-26 | 2010-12-27 | Uniform film-layered structure that converts the wavelengh of emitted light and method for forming the same |
KR1020157005281A KR20150036785A (en) | 2009-12-26 | 2010-12-27 | Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28479209P | 2009-12-26 | 2009-12-26 | |
US61/284,792 | 2009-12-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011079325A1 true WO2011079325A1 (en) | 2011-06-30 |
Family
ID=44196166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2010/062129 WO2011079325A1 (en) | 2009-12-26 | 2010-12-27 | Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP2517272A4 (en) |
JP (1) | JP5639662B2 (en) |
KR (2) | KR20120083936A (en) |
CN (1) | CN102812570A (en) |
DE (1) | DE112010004424T5 (en) |
GB (1) | GB2488936B (en) |
TW (1) | TWI452733B (en) |
WO (1) | WO2011079325A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012106949A1 (en) * | 2012-07-30 | 2014-01-30 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic component |
GB2507223A (en) * | 2010-06-17 | 2014-04-23 | Achrolux Inc | Phosphor containing layer for a LED package |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI459600B (en) * | 2012-07-06 | 2014-11-01 | Lextar Electronics Corp | Light emitting diode package and manufacturing method thereof |
CN103030097B (en) * | 2012-12-12 | 2015-06-17 | 中北大学 | Method for preparing wafer level low-dimensional nanostructures based on electrostatic field self-focusing |
TWI499094B (en) * | 2013-01-25 | 2015-09-01 | Achrolux Inc | Led package and method for fabricating the same |
CN106129228A (en) * | 2016-07-06 | 2016-11-16 | 苏州星烁纳米科技有限公司 | Quantum dot packaging body and preparation method thereof, light-emitting device and display device |
JP6923820B2 (en) * | 2018-10-31 | 2021-08-25 | 日亜化学工業株式会社 | Manufacturing method of package and manufacturing method of light emitting device |
CN113024251A (en) * | 2019-12-09 | 2021-06-25 | 上海航空电器有限公司 | Fluorescent ceramic with plano-concave structure film for high-color-rendering laser lighting and preparation method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020187571A1 (en) * | 2001-06-11 | 2002-12-12 | Collins William David | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor structure |
US6635987B1 (en) * | 2000-09-26 | 2003-10-21 | General Electric Company | High power white LED lamp structure using unique phosphor application for LED lighting products |
US20050106329A1 (en) * | 2003-07-09 | 2005-05-19 | Fry's Metals, Inc. | Deposition and patterning process |
US20080157103A1 (en) * | 2005-10-28 | 2008-07-03 | Philips Lumileds Lighting Company, Llc | Laminating Encapsulant Film Containing Phosphor Over LEDs |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL135549C (en) * | 1966-04-22 | |||
US5019748A (en) * | 1986-12-12 | 1991-05-28 | E-Lite Technologies, Inc. | Method for making an electroluminescent panel lamp as well as panel lamp produced thereby |
CN1033902A (en) * | 1987-12-30 | 1989-07-12 | 依莱特技术公司 | Electroluminescence type lamp and manufacture method thereof |
JPH11233832A (en) * | 1998-02-17 | 1999-08-27 | Nichia Chem Ind Ltd | Light emitting device forming method |
JPH11329235A (en) * | 1998-05-22 | 1999-11-30 | Samsung Display Devices Co Ltd | Manufacture of fluorescent screen for display element |
JP2002216622A (en) * | 2001-01-16 | 2002-08-02 | Harison Toshiba Lighting Corp | Manufacturing method for fluorescent lamp |
JP2003197977A (en) * | 2001-12-27 | 2003-07-11 | Okaya Electric Ind Co Ltd | Method of manufacturing light emitting diode |
US7224000B2 (en) * | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
JP4492378B2 (en) * | 2005-02-03 | 2010-06-30 | 豊田合成株式会社 | Light emitting device and manufacturing method thereof |
US8563339B2 (en) * | 2005-08-25 | 2013-10-22 | Cree, Inc. | System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices |
JP2008060542A (en) * | 2006-08-03 | 2008-03-13 | Toyoda Gosei Co Ltd | Light-emitting device, method of manufacturing same, and light source device provided with the same |
JP4835333B2 (en) * | 2006-09-05 | 2011-12-14 | 日亜化学工業株式会社 | Method for forming light emitting device |
US9196799B2 (en) * | 2007-01-22 | 2015-11-24 | Cree, Inc. | LED chips having fluorescent substrates with microholes and methods for fabricating |
JP2008187089A (en) * | 2007-01-31 | 2008-08-14 | Yuri Kagi Kofun Yugenkoshi | Lamp hood for light-emitting diode |
US7999283B2 (en) * | 2007-06-14 | 2011-08-16 | Cree, Inc. | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
KR100973238B1 (en) * | 2008-03-26 | 2010-07-30 | 서울반도체 주식회사 | Phosphor coating method and apparatus and led comprising phosphor coating layer |
US20100119839A1 (en) * | 2008-11-13 | 2010-05-13 | Maven Optronics Corp. | System and Method for Forming a Thin-Film Phosphor Layer for Phosphor-Converted Light Emitting Devices |
US8323998B2 (en) * | 2009-05-15 | 2012-12-04 | Achrolux Inc. | Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure |
DE112011101580T5 (en) * | 2010-06-17 | 2013-03-14 | Achrolux Inc. | Light-emitting structure and method for producing the same |
-
2010
- 2010-12-27 DE DE112010004424T patent/DE112010004424T5/en not_active Withdrawn
- 2010-12-27 EP EP10840212.4A patent/EP2517272A4/en not_active Withdrawn
- 2010-12-27 JP JP2012546252A patent/JP5639662B2/en not_active Expired - Fee Related
- 2010-12-27 KR KR1020127016526A patent/KR20120083936A/en active Application Filing
- 2010-12-27 TW TW099146216A patent/TWI452733B/en not_active IP Right Cessation
- 2010-12-27 CN CN2010800582587A patent/CN102812570A/en active Pending
- 2010-12-27 WO PCT/US2010/062129 patent/WO2011079325A1/en active Application Filing
- 2010-12-27 KR KR1020157005281A patent/KR20150036785A/en active Search and Examination
- 2010-12-27 GB GB1210550.8A patent/GB2488936B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6635987B1 (en) * | 2000-09-26 | 2003-10-21 | General Electric Company | High power white LED lamp structure using unique phosphor application for LED lighting products |
US20020187571A1 (en) * | 2001-06-11 | 2002-12-12 | Collins William David | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor structure |
US20050106329A1 (en) * | 2003-07-09 | 2005-05-19 | Fry's Metals, Inc. | Deposition and patterning process |
US20080157103A1 (en) * | 2005-10-28 | 2008-07-03 | Philips Lumileds Lighting Company, Llc | Laminating Encapsulant Film Containing Phosphor Over LEDs |
Non-Patent Citations (1)
Title |
---|
See also references of EP2517272A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2507223A (en) * | 2010-06-17 | 2014-04-23 | Achrolux Inc | Phosphor containing layer for a LED package |
GB2507223B (en) * | 2010-06-17 | 2015-01-14 | Achrolux Inc | Light-emitting structure |
DE102012106949A1 (en) * | 2012-07-30 | 2014-01-30 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic component |
JP2015523738A (en) * | 2012-07-30 | 2015-08-13 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | Manufacturing method for optoelectronic components |
US9537063B2 (en) | 2012-07-30 | 2017-01-03 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic component |
Also Published As
Publication number | Publication date |
---|---|
JP5639662B2 (en) | 2014-12-10 |
GB2488936B (en) | 2015-03-25 |
GB201210550D0 (en) | 2012-07-25 |
EP2517272A1 (en) | 2012-10-31 |
KR20150036785A (en) | 2015-04-07 |
GB2488936A (en) | 2012-09-12 |
KR20120083936A (en) | 2012-07-26 |
DE112010004424T5 (en) | 2012-11-08 |
CN102812570A (en) | 2012-12-05 |
JP2013516074A (en) | 2013-05-09 |
TW201135982A (en) | 2011-10-16 |
EP2517272A4 (en) | 2015-04-08 |
TWI452733B (en) | 2014-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2517272A1 (en) | Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same | |
US8247248B2 (en) | Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure | |
TWI476959B (en) | Method for transferring a uniform phosphor layer on an article and light-emitting structure fabricated by the method | |
US20130140983A1 (en) | Light-emitting structure and a method for fabricating the same | |
TWI608760B (en) | Method of forming phosphor-converted light emitting devices | |
KR101404911B1 (en) | Manufacturing method for light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080058258.7 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10840212 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 1210550 Country of ref document: GB Kind code of ref document: A Free format text: PCT FILING DATE = 20101227 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1210550.8 Country of ref document: GB |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010840212 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20127016526 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120100044244 Country of ref document: DE Ref document number: 112010004424 Country of ref document: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012546252 Country of ref document: JP |