KR20150031399A - Method for packaging flexible device using holding wafer, and flexible device manufactured by the same - Google Patents
Method for packaging flexible device using holding wafer, and flexible device manufactured by the same Download PDFInfo
- Publication number
- KR20150031399A KR20150031399A KR20140094466A KR20140094466A KR20150031399A KR 20150031399 A KR20150031399 A KR 20150031399A KR 20140094466 A KR20140094466 A KR 20140094466A KR 20140094466 A KR20140094466 A KR 20140094466A KR 20150031399 A KR20150031399 A KR 20150031399A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- circuit board
- flexible
- electronic device
- flexible substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 27
- 238000004806 packaging method and process Methods 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims abstract description 146
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 239000004840 adhesive resin Substances 0.000 claims description 11
- 229920006223 adhesive resin Polymers 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 239000004033 plastic Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 36
- 239000010410 layer Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000011247 coating layer Substances 0.000 description 3
- 238000004078 waterproofing Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009459 flexible packaging Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Wire Bonding (AREA)
Abstract
A first flexible substrate; A circuit board provided on the first flexible substrate;
An electronic device provided on the circuit board; A bump provided on the electronic device and electrically connected to the electronic device; A second flexible substrate provided on the circuit element; And an electrode line provided between the second flexible substrate and the circuit board, the electrode line being in physical contact with the bump and extending to a side of the second flexible substrate.
Description
BACKGROUND OF THE
A flexible electronic device refers to an electronic device that can bend or bend as a predetermined force is applied. In such a flexible element, not only the flexibility of the element itself but also the coating layer covering the substrate and the element under the element must have a certain level of availability.
However, there is a problem that a flexible substrate (flexible substrate) such as a flexible substrate is not suitable for enduring a semiconductor device manufacturing process that normally proceeds in a high temperature environment. Furthermore, the completed flexible device must have a sufficient bonding force between the substrate-element-coated layers, and if the sufficient bonding is not achieved, there is a problem that the bonding between the substrate and the element-coated layers decreases with warping. Also, the sufficient water-proofing property of the coating layer in a solution environment such as a human body is very important in a flexible electronic element, but a flexible electronic element considering sufficient waterproofing property of a coating layer has not yet been disclosed.
Therefore, even when a large-area integrated circuit (LSI) is implemented in a flexible form, a flexible device for transferring an electric signal generated from the device to the outside while effectively performing waterproofing, mechanical protection, There is a need for packaging technology.
Therefore, a problem to be solved by the present invention is to provide a novel packaging method for a flexible element applicable to a flexible element, and a flexible element manufactured thereby.
According to an aspect of the present invention, there is provided a semiconductor device comprising: a first flexible substrate; A circuit board provided on the first flexible substrate; An electronic device provided on the circuit board; A bump provided on the electronic device and electrically connected to the electronic device; An anisotropic conductive film laminated on the electronic element; A second flexible substrate provided on the anisotropic conductive film; And an electrode line provided between the anisotropic conductive film and the second flexible substrate, the electrode line being electrically connected to the bump and extending to the side of the second flexible substrate.
In one embodiment of the invention, the circuit board is a silicon substrate comprising a silicon layer and a silicon oxide layer.
In one embodiment of the present invention, the silicon substrate is a silicon substrate from which the lower silicon layer is removed.
In one embodiment of the present invention, the electrode line extends to the side of the flexible substrate after being in contact with the anisotropic conductive film.
In one embodiment of the present invention, the second flexible substrate is a flexible element.
In one embodiment of the present invention, the anisotropic dielectric film is larger than the first flexible substrate, and the second plastic substrate is larger than the anisotropic dielectric film.
In one embodiment of the present invention, the electrode lines extend from the anisotropic dielectric film to be exposed through the second plastic substrate side.
According to an aspect of the present invention, there is provided a method of manufacturing an electronic device, including: fabricating an electronic device having a bump on a circuit board; Contacting the stationary substrate on the electronic device to fix the circuit board; Reducing the thickness of the circuit board; Contacting a support substrate below the circuit board; Removing the fixed substrate; And laminating an anisotropic conductive film in an upper direction of the electronic substrate, and heating / pressing the flexible substrate provided with the electrode line.
In one embodiment of the present invention, the circuit board is an SOI substrate, and the step of reducing the thickness is performed by etching the lower silicon layer under the SOI substrate.
In one embodiment of the present invention, the step of securing the circuit board proceeds in such a manner that the fixed board is bonded to the electronic device on the circuit board, and the step of contacting the supporting board to the lower part of the circuit board comprises: And the lower part of the circuit board is bonded to the substrate.
The present invention also provides a method of manufacturing an electronic device, comprising: fabricating an electronic device on a circuit substrate consisting of a sequentially stacked lower silicon layer-silicon oxide layer-upper silicon layer; Applying a first adhesive resin on the electronic device; Bonding the first support substrate to the adhesive resin; Etching the lower surface of the circuit board to adjust a thickness of the circuit board; Applying a second adhesive resin to the rear surface of the circuit board, and then bonding the first flexible board to the back surface of the circuit board; Removing the first support substrate; Attaching a second support substrate to the back surface of the first flexible substrate; Stacking a plurality of bumps on the electronic device; Laminating an anisotropic conductive film on the bumps and heating / pressing the second flexible substrate; And removing the second supporting substrate. The present invention also provides a method of manufacturing a flexible device.
In one embodiment of the present invention, the anisotropic dielectric film is larger than the first flexible substrate, and the second plastic substrate is larger than the anisotropic dielectric film. Wherein the electrode lines extend from the anisotropic insulating film to be exposed through the side surfaces of the second plastic substrate.
According to the present invention, an anisotropic conductive film is bonded to a silicon-on-insulator (SOI) -based circuit board composed of a lower silicon layer-a silicon oxide layer-an upper silicon layer via a bump, and then the anisotropic conductive film A flexible substrate provided with an electrode line (second electrode line) electrically connected to the film is bonded. Therefore, by removing the lower silicon layer of the SOI substrate, the flexible characteristics of the silicon substrate can be maintained as it is. Further, by controlling the thickness of the protective layer to be finally applied, the circuit of the SOI substrate minimizes the mechanical stress can do.
1 to 17 are views for explaining a flexible packaging method according to an embodiment of the present invention.
FIGS. 18 to 26 are diagrams for explaining a flexible element manufacturing method using an anisotropic conductive film (ACF) according to another embodiment of the present invention.
FIGS. 27 to 30 are the results of analyzing characteristics of the flash memory manufactured by etching a circuit board according to an embodiment of the present invention, respectively.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. BRIEF DESCRIPTION OF THE DRAWINGS The same reference numerals throughout the specification designate the same elements, and the drawings attached hereto are all in the form of a cross-sectional view cut along the entire plan and partial cross-sections (A-A ', B-B', or C-C ' . The term "flexible" used in the present invention is a term distinguished from a silicon substrate or the like having a rigid property. The term " flexible " includes all the characteristics of a flexible substrate, .
The term "flexible" as used herein is a term distinguished from a silicon substrate having rigid characteristics and the like. The term " flexible " It is a term.
SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art described above, it is an object of the present invention to provide an anisotropic conductive film laminated on a flexible substrate and a circuit board (for example, a silicon substrate) provided on the anisotropic conductive film and having sufficient flexible characteristics Wherein the anisotropic conductive film and the circuit board are connected by bumps and conductive lines which are conductive members used for circuit packaging. That is, the bumps of the circuit board and the electrode lines of the second flexible substrate are electrically connected to each other by an anisotropic conductive film used for circuit packaging, and manufacturing of the flexible device by the packaging method according to the present invention The method will be described in detail.
1 to 17 are views for explaining a flexible packaging method according to an embodiment of the present invention.
Referring to FIG. 1, an SOI substrate comprising a
Referring to FIG. 2, an
Referring to FIG. 3, a first
Referring to FIG. 4, a first supporting
Referring to FIG. 5, the thickness of the circuit board is controlled. In an embodiment of the present invention, the
Referring to FIG. 6, a device and a substrate attached under the first supporting
Referring to FIG. 7, the first supporting
Referring to FIG. 8, the second supporting
Referring to FIG. 9, a
Referring to FIG. 10, an anisotropic
11 and 12, another second
However, another
Referring to FIGS. 15 and 16, the second supporting
17 is a view showing a case where a
FIGS. 18 to 26 are diagrams for explaining a flexible element manufacturing method using an anisotropic conductive film (ACF) according to another embodiment of the present invention.
Referring to FIG. 18, a circuit board such as SOI is disclosed as in FIG. In one embodiment of the present invention, the SOI substrate is composed of the
19, an
20, the fixed
21, the
22, another
Referring to FIG. 23, after the
24 to 26, a
FIGS. 27 to 30 are the results of analyzing characteristics of the flash memory manufactured by etching a circuit board according to an embodiment of the present invention, respectively.
Referring to FIG. 27, it can be seen that the flash memory device fabricated according to the present invention is significantly folded.
Referring to FIG. 28, it can be seen that the contact resistance of the flash memory of FIG. 27 is constant even when folded.
Referring to FIG. 29, it can be seen that the flash memory device manufactured according to the present invention exhibits the operating characteristics of the memory even in the warped state.
Referring to FIG. 30, FIG. 30 shows operation data of the NAND-type flash memory.
As described above, according to the present invention, after an electronic device is manufactured on a circuit board, an etching process is performed to give the circuit board a flexible characteristic. The flexible substrate and the electronic device are electrically connected to each other by an anisotropic conductive film. In particular, since a flexible substrate can be provided with a flexible substrate by a single etching process after manufacturing a plurality of devices on a circuit substrate, The advantage is that it is very advantageous.
While the present invention has been described with reference to the preferred embodiments thereof, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit and scope of the invention as defined in the appended claims. You will understand
Claims (14)
A flexible circuit board provided on the first flexible substrate;
An electronic device provided on the circuit board;
A bump provided on the electronic device and electrically connected to the electronic device;
An anisotropic conductive film laminated on the electronic element;
A second flexible substrate provided on the anisotropic conductive film; And
And an electrode line provided between the anisotropic conductive film and the second flexible substrate and electrically connected to the bump and extending to a side of the second flexible substrate.
Wherein the circuit board is a silicon substrate comprising a silicon layer and a silicon oxide layer.
Wherein the silicon substrate is a silicon substrate from which a lower silicon layer is removed.
Wherein the electrode line extends to a side surface of the flexible substrate after being in contact with the anisotropic conductive film.
And the second flexible substrate is a flexible element.
Wherein the anisotropic insulation film is larger than the first flexible substrate, and the second plastic substrate is larger than the anisotropic insulation film.
Wherein the electrode line extends from the anisotropic insulating film to be exposed through the side of the second plastic substrate.
Contacting the stationary substrate on the electronic device to fix the circuit board;
Reducing the thickness of the circuit board;
Contacting a support substrate below the circuit board;
Removing the fixed substrate; And
And laminating an anisotropic conductive film in an upper direction of the electronic substrate, and heating / pressing the flexible substrate provided with the electrode line.
Wherein the circuit board is an SOI substrate and the step of reducing the thickness is performed by etching the lower silicon layer under the SOI substrate.
Wherein the step of fixing the circuit board is carried out in such a manner that the fixing board is bonded to the electronic device on the circuit board.
Wherein the step of bringing the support substrate into contact with the lower surface of the circuit board is performed by bonding the lower surface of the circuit board to the support substrate.
Applying a first adhesive resin on the electronic device;
Bonding the first support substrate to the adhesive resin;
Etching the lower surface of the circuit board to adjust a thickness of the circuit board;
Applying a second adhesive resin to the rear surface of the circuit board, and then bonding the first flexible board to the back surface of the circuit board;
Removing the first support substrate;
Attaching a second support substrate to the back surface of the first flexible substrate;
Stacking a plurality of bumps on the electronic device;
Laminating an anisotropic conductive film on the bumps and heating / pressing the second flexible substrate; And
And removing the second support substrate. ≪ Desc / Clms Page number 19 >
Wherein the anisotropic insulation film is larger than the first flexible substrate and the second plastic substrate is larger than the anisotropic insulation film.
Wherein the electrode line extends from the anisotropic insulation film to be exposed through the side of the second plastic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/478,279 US10172241B2 (en) | 2013-09-13 | 2014-09-05 | Method for packaging flexible device using holding wafer, and flexible device manufactured by the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130110232 | 2013-09-13 | ||
| KR20130110232 | 2013-09-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150031399A true KR20150031399A (en) | 2015-03-24 |
| KR101662386B1 KR101662386B1 (en) | 2016-10-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020140094466A KR101662386B1 (en) | 2013-09-13 | 2014-07-25 | Method for manufacturing flexible device using holding wafer, and flexible device manufactured by the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101662386B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10126576B2 (en) | 2015-11-09 | 2018-11-13 | Samsung Display Co., Ltd. | Flexible display apparatus having increased electrical connection reliability of display driver and method of manufacturing the same |
| US10133381B2 (en) | 2015-01-07 | 2018-11-20 | Samsung Electronics Co., Ltd. | Display apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102009492B1 (en) * | 2017-09-27 | 2019-08-12 | 한국과학기술원 | transferring and packaging apparatus for fabricating flexible electronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020041592A (en) * | 2000-11-28 | 2002-06-03 | 구본준, 론 위라하디락사 | Method for fabricating smetic liquid crystal display device |
| JP2003197679A (en) * | 2001-12-28 | 2003-07-11 | Sharp Corp | Semiconductor device, method of mounting the same and mounting body |
| KR20060126367A (en) * | 2005-06-03 | 2006-12-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Integrated circuit device and manufacturing method thereof |
| JP2007281116A (en) * | 2006-04-05 | 2007-10-25 | Casio Comput Co Ltd | Method of manufacturing semiconductor device |
-
2014
- 2014-07-25 KR KR1020140094466A patent/KR101662386B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020041592A (en) * | 2000-11-28 | 2002-06-03 | 구본준, 론 위라하디락사 | Method for fabricating smetic liquid crystal display device |
| JP2003197679A (en) * | 2001-12-28 | 2003-07-11 | Sharp Corp | Semiconductor device, method of mounting the same and mounting body |
| KR20060126367A (en) * | 2005-06-03 | 2006-12-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Integrated circuit device and manufacturing method thereof |
| JP2007281116A (en) * | 2006-04-05 | 2007-10-25 | Casio Comput Co Ltd | Method of manufacturing semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10133381B2 (en) | 2015-01-07 | 2018-11-20 | Samsung Electronics Co., Ltd. | Display apparatus |
| US10126576B2 (en) | 2015-11-09 | 2018-11-13 | Samsung Display Co., Ltd. | Flexible display apparatus having increased electrical connection reliability of display driver and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101662386B1 (en) | 2016-10-05 |
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