KR101492335B1 - Method for packaging flexible device and flexible device manufactured by the same - Google Patents

Method for packaging flexible device and flexible device manufactured by the same Download PDF

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Publication number
KR101492335B1
KR101492335B1 KR20130110231A KR20130110231A KR101492335B1 KR 101492335 B1 KR101492335 B1 KR 101492335B1 KR 20130110231 A KR20130110231 A KR 20130110231A KR 20130110231 A KR20130110231 A KR 20130110231A KR 101492335 B1 KR101492335 B1 KR 101492335B1
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KR
South Korea
Prior art keywords
substrate
flexible
conductive film
anisotropic conductive
flexible substrate
Prior art date
Application number
KR20130110231A
Other languages
Korean (ko)
Inventor
백경욱
이건재
황건태
유현균
김도현
김유선
Original Assignee
한국과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 한국과학기술원 filed Critical 한국과학기술원
Priority to KR20130110231A priority Critical patent/KR101492335B1/en
Priority to US14/478,279 priority patent/US10172241B2/en
Application granted granted Critical
Publication of KR101492335B1 publication Critical patent/KR101492335B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60277—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the use of conductive adhesives

Abstract

Provided is a flexible device which includes a flexible substrate, a plurality of electrode lines which are formed on the flexible substrate and are extended to the side of the flexible substrate after the electrode lines are in contact with an anisotropic conductive film, the anisotropic conductive film which is in contact with the electrode line and is stacked on the flexible substrate, a plurality of bumps which are formed on the anisotropic conductive film, and a circuit board which includes an electronic device in contact with the bumps on one side thereof.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a flexible element packaging method and a flexible element manufactured by the method.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flexible element packaging method and a flexible element manufactured thereby, and more particularly, to a novel flexible element packaging method which is mechanically robust while maintaining the flexibility of a flexible element, and a flexible element manufactured thereby .

A flexible electronic device refers to an electronic device that can bend or bend as a predetermined force is applied. In such a flexible element, not only the flexibility of the element itself but also the coating layer covering the substrate and the element under the element must have a certain level of availability.

However, there is a problem that a flexible substrate (flexible substrate) such as a plastic is not suitable for enduring a semiconductor device manufacturing process which normally proceeds in a high temperature environment. Furthermore, the completed flexible device must have a sufficient bonding force between the substrate-element-coated layers, and if the sufficient bonding is not achieved, there is a problem that the bonding between the substrate and the element-coated layers decreases with warping. Also, the sufficient water-proofing property of the coating layer in a solution environment such as a human body is very important in a flexible electronic element, but a flexible electronic element considering sufficient waterproofing property of a coating layer has not yet been disclosed.

Therefore, even when a large-area integrated circuit (LSI) is implemented in a flexible form, a flexible device for transferring an electric signal generated from the device to the outside while effectively performing waterproofing, mechanical protection, There is a need for packaging technology.

Therefore, a problem to be solved by the present invention is to provide a novel packaging method for a flexible element applicable to a flexible element, and a flexible element manufactured thereby.

In order to solve the above problems, the present invention provides a flexible substrate, A plurality of electrode lines provided on the flexible substrate and extending to a side surface of the flexible substrate after making contact with the anisotropic conductive film; An anisotropic conductive film which is in contact with the electrode line and is laminated on the flexible substrate; A plurality of bumps provided on the anisotropic conductive film; And a circuit board having an electronic element in contact with the plurality of bumps on one surface thereof.

According to an embodiment of the present invention, the circuit board is a silicon substrate including a silicon layer and a silicon oxide layer.

According to an embodiment of the present invention, the silicon substrate is a silicon substrate from which the lower silicon layer of the SOI substrate is removed.

According to an embodiment of the present invention, the electrode line extends to the side surface of the flexible substrate after making contact with the anisotropic conductive film.

According to an embodiment of the present invention, a protective layer for protecting the device is applied to the flexible device, and a large-area integrated circuit provided on the silicon substrate is provided at a mechanically neutral position of the device to which the protective layer is applied do.

The present invention also relates to a method of manufacturing an electronic device, comprising: fabricating an electronic device around a SOI substrate consisting of a sequentially stacked lower silicon layer-silicon oxide layer-upper silicon layer; Laminating metal bumps spaced apart from each other by a predetermined length in the stacked electronic devices; Stacking an anisotropic conductive film on the stacked metal bumps; Applying the heat while applying the laminated anisotropic film to a flexible substrate on which electrode lines are laminated, thereby bonding the flexible substrate to the anisotropic film; And removing the lower silicon layer from the rear surface of the SOI substrate.

According to an embodiment of the present invention, the electrode line is in contact with the anisotropic conductive film and then extended to the outside of the anisotropic conductive film.

According to an embodiment of the present invention, the plurality of electrode lines are spaced apart from each other by the predetermined distance.

According to an embodiment of the present invention, the flexible substrate has a wider area than the SOI substrate.

According to an embodiment of the present invention, the electrode line extends from the SOI substrate to a side of the flexible substrate extending from the SOI substrate.

According to an embodiment of the present invention, the flexible element packaging method further comprises: after the step of removing the lower silicon layer from the back surface of the SOI substrate, applying a passivation layer for protecting the anisotropic conductive film and the silicon oxide layer on the flexible substrate .

According to the present invention, an anisotropic conductive film is bonded to a silicon-on-insulator (SOI) based circuit board composed of a lower silicon layer-a silicon oxide layer-an upper silicon layer via a bump, and then the anisotropic conductive film A flexible substrate provided with an electrode line (second electrode line) electrically connected to the film is bonded. Therefore, by removing the lower silicon layer of the SOI substrate, the flexible characteristics of the silicon substrate can be maintained as it is. Further, by controlling the thickness of the protective layer to be finally applied, the circuit of the SOI substrate minimizes the mechanical stress can do.

1 to 8 are views for explaining a plastic packaging method according to one embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. BRIEF DESCRIPTION OF THE DRAWINGS The same reference numerals throughout the specification designate the same elements, and the drawings attached hereto are all in the form of a cross-sectional view cut along the entire plan and partial cross-sections (A-A ', B-B', or C-C ' . The term "flexible" used in the present invention is a term distinguished from a silicon substrate or the like having rigid characteristics. The term " flexible " includes all the characteristics of a substrate such as a plastic substrate .

The term "flexible" as used herein is a term distinguished from a silicon substrate or the like having a rigid property. The term " flexible " It is a term.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art described above, it is an object of the present invention to provide an anisotropic conductive film laminated on a plastic substrate and a circuit board (for example, a silicon substrate) provided on the anisotropic conductive film and having sufficient flexible characteristics The anisotropic conductive film and the circuit board are connected by bumps and conductive lines, which are conductive members used for circuit packaging. Hereinafter, referring to the drawings, the anisotropic conductive film and the circuit board of the plastic device according to the present invention, The manufacturing method will be described in detail.

1 to 8 are views for explaining a plastic packaging method according to one embodiment of the present invention.

Referring to Figure 1, an SOI substrate comprising a silicon oxide (100) / silicon layer (200) / a silicon oxide layer (100) is disclosed. In the embodiment of the present invention, the silicon-based substrate functions as a substrate on which a circuit is to be fabricated. Hereinafter, the silicon-based substrate is referred to as a circuit substrate. In particular, the lower silicon layer is thinned by a subsequent etching process, The substrate will acquire flexible characteristics during the manufacturing process.

Referring to FIG. 2, an electronic device such as a large area integrated circuit (LSI) is fabricated on the substrate. Since the method of manufacturing the device 300 is the same as that of the conventional substrate, a detailed description thereof will be omitted.

Referring to FIG. 3, a bump 400, which is a protruding member made of a conductive material such as gold, is laminated on the device. The bump is electrically connected to the device 300 to discharge an electric signal generated from the device to the outside, and further functions as a member for accommodating a conductive substrate to be contacted in the future.

Referring to FIG. 4, the anisotropic conductive film 500 is opposed to the bump 400 in an opposed manner.

Referring to FIGS. 5 and 6, after the flexible substrate 600 is laminated on the anisotropic conductive film 600, the flexible substrate 600 is pressed with constant heat and pressure. As a result, the anisotropic conductive film has conductivity and adhesion in the vertical direction and is insulated in the horizontal direction. At this time, in order to solve the problem that the electric signal from the element is disconnected by the flexible substrate 600 having the insulation characteristic, the inventor previously provided the electrode line on the flexible substrate and brought into contact with the anisotropic conductive film . Thus, the electric signal generated from the device is connected to the electrode line 700 of the plastic substrate by the anisotropic conductive film 500 having the conductivity in the vertical direction through the heating and pressing process. In an embodiment of the present invention, the plastic substrate has a wider area than the circuit board, and the electrode line is contacted with the anisotropic conductive film 500 and then extends to the side of the plastic substrate exposed to the outside. This facilitates the electrical connection of the device after the device packaging process.

Referring to FIG. 7, the thickness of the circuit board is controlled. In an embodiment of the present invention, the lower silicon oxide layer is removed by an etching process or the like according to the structural characteristics of the SOI substrate. Although the thickness adjustment of the SOI substrate has been performed after the heating / pressing process in the embodiment of the present invention, the scope of the present invention is not limited to this, and it is possible to proceed after lamination of the anisotropic conductive film, It is possible to effectively solve the problem of distortion of the device due to the presence of the light emitting diode. Furthermore, for shortening the etching process time, the back silicon oxide layer can be physically ground to a predetermined thickness (for example, 50 micrometers) before bonding.

Referring to FIG. 8, a passivation layer 800, which is a protective layer, is applied to front and side surfaces of a device stacked on the flexible substrate 600. As a result, a packaged device that is completed on a final flexible substrate and can withstand external heat and mechanical shock is finally completed.

The above-described method is a manufacturing method of a flexible element, in particular a packaged flexible element, according to an embodiment of the present invention, and the scope of the present invention is not limited thereto. That is, the flexible device according to an embodiment of the present invention includes a flexible substrate 600; A plurality of electrode lines 700 provided on the flexible substrate and extending to a side of the flexible substrate after being in contact with the anisotropic conductive film; An anisotropic conductive film (500) in contact with the electrode line (700) and stacked on the flexible substrate; A plurality of bumps (400) provided on the anisotropic conductive film (500); A circuit board in contact with the plurality of bumps and having an integrated circuit (300) on one side thereof, the circuit board having a thickness of a level having a flexible characteristic.

In one embodiment of the present invention, the circuit board is an SOI substrate, the thickness of which is adjusted by removing the rear silicon oxide layer after the electronic device has been manufactured in advance. Furthermore, in the flexible device to which the protective layer is applied for protecting the device, an electric device such as a large-area integrated circuit provided on the silicon substrate is provided at a mechanically neutral position of the device to which the protective layer is applied, As a result, stable structural characteristics are maintained by the mechanical force externally applied.

While the present invention has been described with reference to the preferred embodiments thereof, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit and scope of the invention as defined in the appended claims. You will understand

Claims (11)

delete delete delete delete delete Fabricating an electronic device on the periphery of an SOI substrate consisting of a sequentially stacked lower silicon layer-silicon oxide layer-upper silicon layer;
Laminating metal bumps spaced apart from each other by a predetermined length in the stacked electronic devices;
Stacking an anisotropic conductive film on the stacked metal bumps;
Applying the heat while applying the laminated anisotropic film to a flexible substrate on which electrode lines are laminated, thereby bonding the flexible substrate to the anisotropic film; And
Removing the lower silicon layer from the back surface of the SOI substrate,
Wherein the electrode line is in contact with the anisotropic conductive film and extends to the outside of the anisotropic conductive film. delete The method according to claim 6,
Wherein the plurality of electrode lines are spaced apart from each other at the predetermined intervals. 9. The method of claim 8,
Wherein the flexible substrate is wider than the SOI substrate. 10. The method of claim 9,
Wherein the electrode line extends from the SOI substrate to the side of the flexible substrate extending from the SOI substrate. The flexible element packaging method according to claim 10,
Further comprising the step of applying a passivation layer for protecting the anisotropic conductive film and the silicon oxide layer on the flexible substrate after removing the lower silicon layer from the back surface of the SOI substrate.
KR20130110231A 2013-09-13 2013-09-13 Method for packaging flexible device and flexible device manufactured by the same KR101492335B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR20130110231A KR101492335B1 (en) 2013-09-13 2013-09-13 Method for packaging flexible device and flexible device manufactured by the same
US14/478,279 US10172241B2 (en) 2013-09-13 2014-09-05 Method for packaging flexible device using holding wafer, and flexible device manufactured by the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20130110231A KR101492335B1 (en) 2013-09-13 2013-09-13 Method for packaging flexible device and flexible device manufactured by the same

Related Child Applications (1)

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KR20140155884A Division KR20150031406A (en) 2014-11-11 2014-11-11 flexible device using packaging technology

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KR101492335B1 true KR101492335B1 (en) 2015-02-12

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197679A (en) * 2001-12-28 2003-07-11 Sharp Corp Semiconductor device, method of mounting the same and mounting body
KR20060126367A (en) * 2005-06-03 2006-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Integrated circuit device and manufacturing method thereof
KR20130035704A (en) * 2011-09-30 2013-04-09 한국과학기술원 Manufacturing method for flexible vlsi and flexible vlsi manufactured by the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197679A (en) * 2001-12-28 2003-07-11 Sharp Corp Semiconductor device, method of mounting the same and mounting body
KR20060126367A (en) * 2005-06-03 2006-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Integrated circuit device and manufacturing method thereof
KR20130035704A (en) * 2011-09-30 2013-04-09 한국과학기술원 Manufacturing method for flexible vlsi and flexible vlsi manufactured by the same

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