KR20150015760A - 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법 - Google Patents

발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법 Download PDF

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Publication number
KR20150015760A
KR20150015760A KR1020130091553A KR20130091553A KR20150015760A KR 20150015760 A KR20150015760 A KR 20150015760A KR 1020130091553 A KR1020130091553 A KR 1020130091553A KR 20130091553 A KR20130091553 A KR 20130091553A KR 20150015760 A KR20150015760 A KR 20150015760A
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KR
South Korea
Prior art keywords
layer
pressure
type semiconductor
semiconductor layer
forming
Prior art date
Application number
KR1020130091553A
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English (en)
Korean (ko)
Inventor
박기연
한창석
김화목
이아람차
Original Assignee
서울바이오시스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to KR1020130091553A priority Critical patent/KR20150015760A/ko
Priority to PCT/KR2014/006452 priority patent/WO2015016507A1/fr
Publication of KR20150015760A publication Critical patent/KR20150015760A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
KR1020130091553A 2013-08-01 2013-08-01 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법 KR20150015760A (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020130091553A KR20150015760A (ko) 2013-08-01 2013-08-01 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법
PCT/KR2014/006452 WO2015016507A1 (fr) 2013-08-01 2014-07-16 Modèle pour fabriquer un dispositif électroluminescent et procédé pour fabriquer un dispositif électroluminescent à lumière ultraviolette

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130091553A KR20150015760A (ko) 2013-08-01 2013-08-01 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법

Publications (1)

Publication Number Publication Date
KR20150015760A true KR20150015760A (ko) 2015-02-11

Family

ID=52431991

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130091553A KR20150015760A (ko) 2013-08-01 2013-08-01 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법

Country Status (2)

Country Link
KR (1) KR20150015760A (fr)
WO (1) WO2015016507A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160117012A (ko) * 2015-03-31 2016-10-10 서울바이오시스 주식회사 자외선 발광 소자
KR101697462B1 (ko) * 2016-07-04 2017-01-18 (주)유니드엘이디 수직형 자외선 발광소자, 이의 제조 방법, 수직형 자외선 발광소자용 AlN 템플릿 및 이의 제조 방법
WO2017179944A1 (fr) * 2016-04-15 2017-10-19 엘지이노텍 주식회사 Dispositif électroluminescent, boîtier de dispositif électroluminescent et module électroluminescent

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7112830B2 (en) * 2002-11-25 2006-09-26 Apa Enterprises, Inc. Super lattice modification of overlying transistor
SG124417A1 (en) * 2005-02-02 2006-08-30 Agency Science Tech & Res Method and structure for fabricating III-V nitridelayers on silicon substrates
JP5274785B2 (ja) * 2007-03-29 2013-08-28 日本碍子株式会社 ＡｌＧａＮ結晶層の形成方法
KR20110133239A (ko) * 2010-06-04 2011-12-12 서울옵토디바이스주식회사 신뢰성 있는 발광 다이오드
US9252329B2 (en) * 2011-10-04 2016-02-02 Palo Alto Research Center Incorporated Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160117012A (ko) * 2015-03-31 2016-10-10 서울바이오시스 주식회사 자외선 발광 소자
WO2017179944A1 (fr) * 2016-04-15 2017-10-19 엘지이노텍 주식회사 Dispositif électroluminescent, boîtier de dispositif électroluminescent et module électroluminescent
JP2019514224A (ja) * 2016-04-15 2019-05-30 エルジー イノテック カンパニー リミテッド 発光素子、発光素子パッケージおよび発光モジュール
US10644194B2 (en) 2016-04-15 2020-05-05 Lg Innotek Co., Ltd. Light-emitting device, light-emitting device package, and light-emitting module
KR101697462B1 (ko) * 2016-07-04 2017-01-18 (주)유니드엘이디 수직형 자외선 발광소자, 이의 제조 방법, 수직형 자외선 발광소자용 AlN 템플릿 및 이의 제조 방법

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Publication number Publication date
WO2015016507A1 (fr) 2015-02-05

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