KR20150013594A - 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버 - Google Patents

프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버 Download PDF

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Publication number
KR20150013594A
KR20150013594A KR1020147032961A KR20147032961A KR20150013594A KR 20150013594 A KR20150013594 A KR 20150013594A KR 1020147032961 A KR1020147032961 A KR 1020147032961A KR 20147032961 A KR20147032961 A KR 20147032961A KR 20150013594 A KR20150013594 A KR 20150013594A
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KR
South Korea
Prior art keywords
process kit
substrate
etch stop
kit shield
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020147032961A
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English (en)
Korean (ko)
Inventor
무함매드 라쉬드
아돌프 밀러 알렌
지안퀴 왕
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20150013594A publication Critical patent/KR20150013594A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147032961A 2012-04-24 2013-04-18 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버 Ceased KR20150013594A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261637606P 2012-04-24 2012-04-24
US61/637,606 2012-04-24
US13/860,578 2013-04-11
US13/860,578 US20130277203A1 (en) 2012-04-24 2013-04-11 Process kit shield and physical vapor deposition chamber having same
PCT/US2013/037101 WO2013162992A1 (en) 2012-04-24 2013-04-18 Process kit shield and physical vapor deposition chamber having same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207018767A Division KR20200079576A (ko) 2012-04-24 2013-04-18 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버

Publications (1)

Publication Number Publication Date
KR20150013594A true KR20150013594A (ko) 2015-02-05

Family

ID=49379103

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020147032961A Ceased KR20150013594A (ko) 2012-04-24 2013-04-18 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버
KR1020207018767A Ceased KR20200079576A (ko) 2012-04-24 2013-04-18 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020207018767A Ceased KR20200079576A (ko) 2012-04-24 2013-04-18 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버

Country Status (6)

Country Link
US (2) US20130277203A1 (https=)
JP (1) JP6238963B2 (https=)
KR (2) KR20150013594A (https=)
CN (1) CN104246004B (https=)
TW (1) TWI616552B (https=)
WO (1) WO2013162992A1 (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR20240093616A (ko) * 2021-11-19 2024-06-24 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. 반도체 챔버

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US20130136864A1 (en) * 2011-11-28 2013-05-30 United Technologies Corporation Passive termperature control of hpc rotor coating
JP5860063B2 (ja) * 2011-12-22 2016-02-16 キヤノンアネルバ株式会社 基板処理装置
CN105097401B (zh) * 2014-05-13 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室及半导体加工设备
CN105779932B (zh) * 2014-12-26 2018-08-24 北京北方华创微电子装备有限公司 用于处理腔室的工艺内衬和物理气相沉积设备
US10546733B2 (en) 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
WO2016157771A1 (ja) * 2015-03-31 2016-10-06 株式会社アルバック カソードアッセンブリ
WO2017007729A1 (en) * 2015-07-03 2017-01-12 Applied Materials, Inc. Process kit having tall deposition ring and deposition ring clamp
US10103012B2 (en) 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
US9953812B2 (en) 2015-10-06 2018-04-24 Applied Materials, Inc. Integrated process kit for a substrate processing chamber
JP2018535324A (ja) * 2015-11-24 2018-11-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｖｈｆ−ｒｆ ｐｖｄチャンバで使用するためのプレコートされたシールド
KR102678733B1 (ko) * 2015-12-04 2024-06-26 어플라이드 머티어리얼스, 인코포레이티드 Hdp-cvd 챔버 아킹을 방지하기 위한 첨단 코팅 방법 및 재료들
US11017984B2 (en) * 2016-04-28 2021-05-25 Applied Materials, Inc. Ceramic coated quartz lid for processing chamber
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
US10998172B2 (en) * 2017-09-22 2021-05-04 Applied Materials, Inc. Substrate processing chamber having improved process volume sealing
JP7001448B2 (ja) * 2017-12-05 2022-01-19 東京エレクトロン株式会社 Ｐｖｄ処理方法およびｐｖｄ処理装置
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
US10818839B2 (en) 2018-03-15 2020-10-27 Samsung Electronics Co., Ltd. Apparatus for and method of fabricating semiconductor devices
US11584985B2 (en) * 2018-08-13 2023-02-21 Honeywell International Inc. Sputter trap having a thin high purity coating layer and method of making the same
TWI851279B (zh) 2019-02-11 2024-08-01 美商應用材料股份有限公司 物理氣相沉積方法
US11289312B2 (en) * 2019-06-12 2022-03-29 Applied Materials, Inc. Physical vapor deposition (PVD) chamber with in situ chamber cleaning capability
KR102755075B1 (ko) * 2019-11-15 2025-01-14 캐논 톡키 가부시키가이샤 성막장치
KR102755070B1 (ko) * 2019-11-20 2025-01-14 캐논 톡키 가부시키가이샤 성막장치
US12195843B2 (en) * 2023-01-19 2025-01-14 Applied Materials, Inc. Multicathode PVD system for high aspect ratio barrier seed deposition

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US6613442B2 (en) * 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
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JP4623055B2 (ja) * 2007-05-23 2011-02-02 日本テキサス・インスツルメンツ株式会社 メタル成膜装置におけるメタル膜剥離防止構造及び当該構造を用いる半導体装置の製造方法
JP5916384B2 (ja) * 2008-04-16 2016-05-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェハ処理堆積物遮蔽構成材
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240093616A (ko) * 2021-11-19 2024-06-24 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. 반도체 챔버

Also Published As

Publication number Publication date
CN104246004B (zh) 2017-05-03
TWI616552B (zh) 2018-03-01
WO2013162992A1 (en) 2013-10-31
TW201346055A (zh) 2013-11-16
US20170088942A1 (en) 2017-03-30
JP6238963B2 (ja) 2017-11-29
US20130277203A1 (en) 2013-10-24
CN104246004A (zh) 2014-12-24
KR20200079576A (ko) 2020-07-03
JP2015515551A (ja) 2015-05-28

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