KR20150003783A - X선 검사 방법 및 x선 검사 장치 - Google Patents

X선 검사 방법 및 x선 검사 장치 Download PDF

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Publication number
KR20150003783A
KR20150003783A KR1020147030762A KR20147030762A KR20150003783A KR 20150003783 A KR20150003783 A KR 20150003783A KR 1020147030762 A KR1020147030762 A KR 1020147030762A KR 20147030762 A KR20147030762 A KR 20147030762A KR 20150003783 A KR20150003783 A KR 20150003783A
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KR
South Korea
Prior art keywords
image
ray
shape
simulation
inspected
Prior art date
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Withdrawn
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KR1020147030762A
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English (en)
Korean (ko)
Inventor
야스토시 우메하라
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20150003783A publication Critical patent/KR20150003783A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/418—Imaging electron microscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6113—Specific applications or type of materials patterned objects; electronic devices printed circuit board [PCB]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10072—Tomographic images
    • G06T2207/10081—Computed x-ray tomography [CT]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10116—X-ray image
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20024—Filtering details
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
KR1020147030762A 2012-05-01 2013-04-24 X선 검사 방법 및 x선 검사 장치 Withdrawn KR20150003783A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-104953 2012-05-01
JP2012104953A JP2013231700A (ja) 2012-05-01 2012-05-01 Ｘ線検査方法及びｘ線検査装置
PCT/JP2013/062127 WO2013164971A1 (ja) 2012-05-01 2013-04-24 Ｘ線検査方法及びｘ線検査装置

Publications (1)

Publication Number Publication Date
KR20150003783A true KR20150003783A (ko) 2015-01-09

Family

ID=49514370

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147030762A Withdrawn KR20150003783A (ko) 2012-05-01 2013-04-24 X선 검사 방법 및 x선 검사 장치

Country Status (5)

Country Link
US (1) US20150055754A1 (https=)
JP (1) JP2013231700A (https=)
KR (1) KR20150003783A (https=)
TW (1) TW201350788A (https=)
WO (1) WO2013164971A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015125395A1 (ja) * 2014-02-24 2015-08-27 東京エレクトロン株式会社 Ｘ線検査システム、制御方法、制御プログラム及び制御装置
EP2927948A1 (en) * 2014-04-04 2015-10-07 Nordson Corporation X-ray inspection apparatus for inspecting semiconductor wafers
CN104266594B (zh) * 2014-08-01 2017-01-18 江苏大学 一种基于不同视觉技术块冻虾净含量检测的厚度补偿方法
JP2018087699A (ja) * 2015-03-31 2018-06-07 東京エレクトロン株式会社 シリコン貫通ビア形成生産管理システム、シリコン貫通ビア形成生産管理方法、記録媒体及びプログラム
KR101806026B1 (ko) * 2016-05-23 2017-12-07 건양대학교산학협력단 엑스선 촬영 실습용 가상 엑스선 촬영 시스템
KR102409643B1 (ko) * 2017-12-28 2022-06-16 가부시키가이샤 리가쿠 X선 검사 장치
US11430118B2 (en) * 2019-07-12 2022-08-30 Bruker Nano, Inc. Methods and systems for process control based on X-ray inspection
JP7451306B2 (ja) * 2020-05-29 2024-03-18 株式会社東芝 非破壊構造解析装置、非破壊構造検査装置および非破壊構造解析方法
CN112504144B (zh) * 2020-12-04 2021-10-29 南京大学 一种海冰表面积雪厚度的遥感估算方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6061469A (en) * 1998-06-22 2000-05-09 Mitsubishi Electric Information Technology Center America, Inc (Ita) Object rendering system to produce X-ray like images
JP2001215202A (ja) * 2000-02-02 2001-08-10 Matsushita Electric Ind Co Ltd 放射線検出方法における特定構造の位置特定方法、放射線検出装置、及び基準スケール
US6442234B1 (en) * 2000-10-03 2002-08-27 Advanced Micro Devices, Inc. X-ray inspection of ball contacts and internal vias
JP4519434B2 (ja) * 2003-09-24 2010-08-04 株式会社東芝 超解像処理装置及び医用画像診断装置
JP4477980B2 (ja) * 2004-10-05 2010-06-09 名古屋電機工業株式会社 Ｘ線検査装置、ｘ線検査方法およびｘ線検査プログラム
JP2007218711A (ja) * 2006-02-16 2007-08-30 Hitachi High-Technologies Corp 電子顕微鏡装置を用いた計測対象パターンの計測方法
JP4851240B2 (ja) * 2006-06-05 2012-01-11 株式会社トプコン 画像処理装置及びその処理方法
JP2010034138A (ja) * 2008-07-25 2010-02-12 Toshiba Corp パターン検査装置、パターン検査方法およびプログラム
JP2015025759A (ja) * 2013-07-26 2015-02-05 Hoya株式会社 基板検査方法、基板製造方法および基板検査装置

Also Published As

Publication number Publication date
JP2013231700A (ja) 2013-11-14
US20150055754A1 (en) 2015-02-26
TW201350788A (zh) 2013-12-16
WO2013164971A1 (ja) 2013-11-07

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PA0105 International application

Patent event date: 20141031

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid