KR20140138048A - Sputtering Device having split type magnet - Google Patents

Abstract

According to the present invention, disclosed is a sputtering device including a substrate; a target disposed in an area to face the substrate; and a plurality of magnet portions disposed in an area to face the target, having a length in the vertical direction, and separated from each other in a horizontal direction, wherein the respective magnet portion includes multiple split type magnets which are split in a longitudinal direction in order to independently control a distance from the target.

Description

TECHNICAL FIELD [0001] The present invention relates to a sputtering device having a split magnet,

The present invention relates to a sputtering apparatus having a split magnet.

Sputtering is a main method for depositing a thin film on a glass substrate constituting a flat panel display device such as a liquid crystal display or an organic light-emitting diode device.

In the sputtering apparatus, a magnet is disposed on the rear side of the target to generate a magnetic field on the front surface, thereby depositing a thin film on the substrate. At this time, a magnetic field is not uniformly formed on the entire surface of the target, . Particularly, there is a problem that the upper and lower portions of the substrate are deposited thicker than the central portion. Therefore, a sputtering apparatus is used in which a magnet itself is inclined to improve film thickness and surface resistance scattering of a substance to be formed on a substrate. However, in this method, since the magnet moves as a whole, the effect of improving the film thickness and the surface resistance scattering as a whole is not significant.

There is also a method in which magnetic shunts are applied to the surface of the magnet to change the plasma density at a local site. However, this method has a problem that the chamber must be adjusted without maintaining the vacuum state.

Korean Patent Publication No. 2011-0129279 (December 1, 2011)

The present invention is to provide a sputtering apparatus having a split-type magnet capable of reducing film thickness and surface resistance scattering of a thin film formed on a substrate.

A sputtering apparatus according to an embodiment of the present invention includes a substrate, a target positioned in an area opposed to the substrate, a target positioned in a region opposed to the target, having a length in a vertical direction, In the sputtering apparatus having a plurality of magnet portions arranged, each of the magnet portions includes a plurality of dividing magnets divided in the longitudinal direction so as to independently adjust the distance from the target.

The distance between the division type magnet and the target corresponding to the upper and lower regions of the vertical direction may be smaller or larger than the distance between the division type magnet and the target corresponding to the central region in the vertical direction.

Each of the split type magnets includes a magnet unit; A ball shaft coupled to the magnet unit and passing through the wall of the chamber; A shaft guide coupled to the magnet unit and passing through a wall of the chamber; A unit support through which the ball guide and the shaft guide penetrate through the support base; And a distance adjusting unit coupled to the ball shaft passing through the unit support and adjusting a moving distance of the magnet unit. The distance adjustment unit may be a handle or a motor coupled to the ball shaft.

A sputtering apparatus having a split magnet according to an embodiment of the present invention includes a substrate, a target positioned in an area opposed to the substrate, and a target positioned opposite to the target, And a plurality of magnet portions spaced apart from each other in the direction of the left region, the center region, and the right region, wherein each of the magnet portions has a length in the longitudinal direction And a plurality of divided magnets divided into a plurality of divided magnets.

A sputtering apparatus having a split magnet according to another embodiment of the present invention includes a substrate, a target positioned in an area opposed to the substrate, and a sputtering target positioned in a region facing the target, A center magnet unit including a center magnet, the center magnet being configured to be moved back and forth with respect to the target and to be tilted; and a central magnet unit including a plurality of magnet units arranged horizontally and spaced apart from each other, An upper magnet unit including an upper magnet disposed on an upper portion of the center magnet, the upper magnet unit being formed so as to move forward or backward independently of or together with the center magnet, and a lower magnet positioned below the center magnet, A magnet is formed so as to move back and forth independently of the central magnet And a sub-magnet unit.

The sputtering apparatus of the present invention includes a plurality of divided magnets and adjusts the distance between the plurality of divided magnets and the target in the upper region, the lower region, and the central region to change the plasma density of the target surface of the adjusted region So that the film thickness and the surface resistance scattering of the thin film formed on the substrate can be reduced.

FIG. 1A is a schematic plan view showing a configuration of a sputtering apparatus having a split magnet according to an embodiment of the present invention, and FIG. 1B is a side view.
FIG. 2A is an enlarged side view showing one division type magnet, and FIG. 2B is an enlarged side view showing a distance adjustment state of the division type magnet.
FIG. 3A is a side view showing a state in which a distance between each of the divided magnets and a target is adjusted in a sputtering apparatus having a dividing magnet according to an embodiment of the present invention, FIG. 3B is a schematic Fig.
4 is a vertical sectional view of a sputtering apparatus having a split magnet according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, a sputtering apparatus having a split magnet according to an embodiment of the present invention will be described.

FIG. 1A is a schematic plan view showing a configuration of a sputtering apparatus having a split magnet according to an embodiment of the present invention, and FIG. 1B is a side view.

A sputtering apparatus 100 having a split magnet according to an embodiment of the present invention includes a vacuum chamber 110, a substrate 120, a substrate support 130, a target 140, a plurality of horizontally spaced A magnet portion 150, a vacuum 160 and a gas injection portion 170. Here, the horizontal direction is the X-axis direction in the drawing, and the vertical direction is the Z-axis direction in the drawing.

The vacuum chamber 110 is maintained in a high vacuum state and is a space for performing sputtering for depositing a thin film on the substrate 120. A substrate 120 is vertically installed on one side of the vacuum chamber 110 and a substrate support 130 for supporting the substrate 120 is installed upright and a target 140, A plurality of magnet portions 150 are formed so as to protrude. In addition, a vacuum chamber 160 is connected to the outside of the vacuum chamber 110 to maintain the inside of the vacuum chamber 110 under vacuum. A gas supply unit 170 for supplying a plasma gas to the inside of the vacuum chamber 110 is connected to the outside of the vacuum chamber 110.

The substrate 120 is vertically formed on one side of the vacuum chamber 110. One side of the substrate 120 is coupled to the substrate support 130 and the other side is opposite the target 140. The substrate 120 may be a glass substrate constituting a flat panel display device such as a liquid crystal display, a plasma display panel device, or an organic light-emitting diode device , And are not intended to limit the present invention.

The substrate support 130 is vertically formed on one side of the vacuum chamber 110 and supports the substrate 120 to fix the substrate 120 to the vacuum chamber 110. An external anode power may be applied to the substrate support 130.

The target 140 is spaced apart from the substrate 120 and is vertically formed on the other side of the vacuum chamber 110. One surface of the target 140 faces the substrate 120, and the target 140 may be formed larger than the substrate 120. The target 140 is made of a material that forms a thin film on the substrate 120. For example, the target 140 may be formed of a metal such as aluminum (Al), an aluminum alloy (AlNd), titanium (Ti), cobalt (Co), zinc (Zn) ), Platinum (Pt), gold (Au), and the like. However, these materials do not limit the present invention. An external cathode power source may be applied to the target 140.

The plurality of magnet units 150 are positioned in a region opposed to the target 140 and are vertically formed and arranged in a horizontally spaced arrangement. That is, the plurality of magnet units 150 are formed as one magnet unit in the vertical direction, and are arranged in a plurality of horizontally spaced apart magnet units. In other words, the plurality of magnet units 150 are formed of one magnet unit having an upper region, a central region, and a lower region, and a plurality of magnet units 150 are arranged in a direction of the left region, the center region, do. Meanwhile, the plurality of magnet units 150 may be integrally formed as one magnet unit with respect to the horizontal direction.

Also, the plurality of magnet units 150 may be applied to a conventional tilting magnet. That is, the plurality of magnet units 150 may be formed such that the upper region or the lower region moves forward or backward with respect to the central region while tilting the entire magnet unit 150 forward or backward.

Also, the plurality of magnet units 150 may be applied to a conventional back and forth movable magnet. That is, the plurality of magnet units 150 may be formed so that the upper region or the lower region moves forward or backward relative to the central region while moving the entire magnet units 150 forward or backward.

Also, As shown in FIG. 1B, the plurality of magnet units 150 includes a plurality of divided magnets 150a, 150b, and 150c that are divided in the longitudinal direction in the vertical direction so as to independently adjust the distance from the target 140 ). Although three split magnets 150a, 150b and 150c having the same length are shown in the figure, the present invention is not limited to these lengths and numbers. That is, the lengths of the three divided magnets 150a, 150b, and 150c may be different depending on the characteristics of the substrate 120 to be formed, and the number may be larger or smaller. The detailed structure of the split type magnets 150a, 150b and 150c will be described below again.

The plurality of magnet portions 150 spaced apart in the horizontal direction are spaced apart from the other surface of the target 140. The plurality of magnet units 150 generate a magnetic field in the vacuum chamber 110 to deposit a target material on the substrate 120.

Since the magnet unit 150 arranged in the horizontal direction as described above includes a plurality of divided magnets 150a, 150b and 150c divided in the longitudinal direction in the vertical direction, The distances between the magnets 150a, 150b, and 150c can be independently adjusted.

For example, the distance between the divided magnets 150a and 150c corresponding to the upper and lower regions of the vertical direction and the target 140 may be determined by the distance between the divided magnet 150b and the target 140). ≪ / RTI > This is because the film thickness of the upper region and the lower region of the substrate 120 is generally larger than the film thickness of the central region of the substrate 120 due to the characteristics of the plasma. Therefore, the distance between the target 120 and / or the target 140 and the divided magnets 150a and 150b corresponding to the upper and lower regions of the target 140 can be set to be equal to or greater than the distance between the substrate 120 and / The plasma density is lowered at the surface of the substrate 120 and / or the target 140 of the adjusted part by adjusting the distance between the divided magnet 150c and the target 140 to be larger than the distance between the center of the divided magnet 150c and the target 140 , The film thickness to be formed on the substrate 120 can be reduced and the surface resistance can be increased. In other words, in the present invention, a portion having a large thickness is made to move away from the target 140, and a portion having a small thickness is made to bring the split magnet 150c close to the target 140 Main features.

The distance between the target 120 and / or the target 140 and the divided magnets 150a and 150b corresponding to the upper and lower regions of the substrate 120 and / The distance between the divided magnet 150c and the target 140 corresponding to the central region of the divided magnet 150c and the target 140 can be adjusted to be smaller than the distance between the divided magnet 150c and the target 140. However, As shown in FIG.

Here, the upper region and the lower region of the substrate 120 and / or the target 140 may mean a width of 1/10 to 1/3 of the entire width from the upper and lower ends of the target 140, Can mean the remaining width. However, the present invention is not limited to these numerical values, and the upper region, the lower region and the central region of the substrate 120 and / or the target 140 may be set slightly differently depending on the characteristics of the substrate 120 to be formed .

As described above, the magnet unit 150 includes a plurality of divided magnets 150a, 150b, and 150c that can independently adjust the distance from the target 140, so that not only the central region of the substrate 120, It is possible to form the film so as to have a uniform film thickness and a surface resistance in the upper region and the lower region of the substrate.

The vacuum chamber 160 is formed outside the vacuum chamber 110 to maintain the inside of the vacuum chamber 110 in a high vacuum state. The vacuum chamber 160 may be formed of a cryo pump or a turbo pump. However, this does not limit the present invention.

The gas injection unit 170 is formed outside the vacuum chamber 110 and injects an inert gas such as argon into the vacuum chamber 110 in a high vacuum state.

FIG. 2A is an enlarged side view showing one division type magnet, and FIG. 2B is an enlarged side view showing a distance adjustment state of the division type magnet. Here, since the structures of the split type magnets 150a, 150b and 150c are all the same, a structure of one divided type magnet 150a will be described.

2A and 2B, the split type magnet 150a includes a magnet 151, a magnet support 152, a ball shaft 153, a shaft guide 154, a unit support 155, (156).

The magnet 151 may be a permanent magnet having N poles and S poles or an equivalent of an electromagnet or an equivalent thereof to generate a magnetic force while maintaining a distance from the target 140, Thereby generating and maintaining a desired density of plasma.

The magnet support 152 serves to support the magnet 151 in the vertical direction.

One end of the ball shaft 153 is coupled to the magnet support 152 and the other end is coupled to the unit support 155 through the chamber wall 157. In addition, the other end of the ball shaft 153 is connected to the distance adjusting unit 156 to be rotated in a predetermined direction according to the operation of the distance adjusting unit 156.

The shaft guide 154 is coupled to a unit support 155 that is coupled to the magnet unit 151 and penetrates the chamber wall 157.

The unit support 155 is coupled to the ball shaft 153 and the shaft guide 154 through the chamber wall 157 described above.

The distance adjusting unit 156 is coupled to a ball shaft 153 passing through the unit support 155 to adjust the moving distance of the magnet unit 151. The distance adjusting unit 156 may be any one selected from a handle 156b coupled to the ball shaft 153, a motor, and the like, but the present invention is not limited thereto. Reference numeral 156a denotes a speed reducer coupled between the ball shaft 153 and the handle 156b.

Thus, in the present invention, the ball shaft 153 rotates clockwise or counterclockwise according to the operation of the distance adjusting unit 156. [ Accordingly, the magnet unit 151 is guided by the shaft guide 154 to approach the target 140 or away from the target 140.

Therefore, in the present invention, by adjusting the distance between the divided magnet 150a and the target 140 locally in consideration of the film thickness and the surface resistance to be formed on the substrate 120, the film thickness of the substrate 120, Thereby minimizing the resistance scattering.

Further, in the present invention, the distance between the target 140 and the magnet unit 151 can be easily adjusted by simply adjusting the distance adjusting unit 156 from the outside without changing the degree of internal vacuum of the vacuum chamber 110 .

FIG. 3A is a side view showing a state in which a distance between each of the divided magnets and a target is adjusted in a sputtering apparatus having a dividing magnet according to an embodiment of the present invention, FIG. 3B is a schematic Fig.

In FIG. 3B, the region indicated by the relatively dark hatching is a portion where the film thickness is relatively thinly formed to the central region of the substrate 120, and the region indicated by the relatively hatching is approximately the upper region and the lower region of the substrate 120 Which is formed to have a relatively large film thickness.

As shown in FIG. 3A, the magnet unit 150 is located in an area opposed to the target 140, and has a length in a direction (vertical direction) of an upper area, a center area, and a lower area. Of course, as described above, the plurality of magnet units 150 are arranged in the direction of the left region, the center region, and the right region (horizontal direction). Each of the magnet units 150 includes a plurality of divided magnets 150a, 150b and 150c divided in the longitudinal direction (vertical direction) so that the distance from the target 140 can be independently adjusted.

3B, if the film thicknesses of the upper and lower regions of the substrate 120 are relatively larger than the central region, as shown in FIG. 3A, the upper and lower regions By adjusting the distances L1 and L2 between the corresponding divided magnets 150a and 150b and the target 140 to be larger than the distance L3 between the divided magnet 150c and the target 140 corresponding to the central region , The film thickness and the surface resistance scattering of the upper region, the lower region and the central region of the substrate 120 can be minimized.

Table 1 below shows the surface resistances measured at predetermined intervals in the horizontal direction when the distances between the target 140 and the divided magnets 150a, 150b and 150c are all the same, The surface resistance after the distance between the target 140 and the dividing magnets 150a, 150b, 150c is adjusted substantially as shown in Fig. 3A.

Ref. P1 (Ω / □) P2 (Ω / □) P3 (Ω / □) P4 (Ω / □) P5 (Ω / □) UT (%) One 0.6519 0.5525 0.4951 0.6247 0.6424 13.67 2 0.6539 0.5888 0.5562 0.6418 0.6433 8.07 3 0.6460 0.6178 0.5883 0.6677 0.6610 6.32 4 0.6513 0.6469 0.6152 0.6896 0.6665 5.70 5 0.6442 0.6275 0.5917 0.6648 0.6618 5.82 6 0.6240 0.6012 0.5576 0.6453 0.6690 9.08 7 0.6440 0.5848 0.5392 0.6150 0.6774 11.36

Ref. P1 (Ω / □) P2 (Ω / □) P3 (Ω / □) P4 (Ω / □) P5 (Ω / □) UT (%) One 0.6429 0.5514 0.5269 0.6083 0.6484 10.34 2 0.6459 0.5985 0.6126 0.6491 0.6459 4.06 3 0.6442 0.6340 0.6592 0.6835 0.6628 3.76 4 0.6518 0.6697 0.6874 0.7099 0.6731 4.27 5 0.6430 0.6484 0.6579 0.6820 0.6685 2.94 6 0.6222 0.6114 0.6061 0.6546 0.6761 5.46 7 0.6370 0.5755 0.5625 0.6111 0.6780 9.31

As shown in Table 1, when the distances between the target 140 and the dividing magnets 150a, 150b and 150c are all the same, the surface resistance uniformity (UT) of the uppermost region and the lowermost region is 13.67% and 11.36%, respectively . However, as shown in Table 2, when the distance between the target 140 and the dividing magnets 150a, 150b, and 150c is adjusted as shown in FIG. 3A, the surface resistance uniformity UT of the uppermost region and the lowermost region is 10.34% and 9.31%, respectively.

Here, Ref. 1,7 can be seen as the upper region and the lower region, respectively, and Ref. 2 to 6 can be seen as a central area. In addition, the data shown in Tables 1 and 2 are data derived from a magnet portion composed of approximately seven division type magnets moving in the horizontal direction and moving apart from each other.

Next, a sputtering apparatus having a split magnet according to another embodiment of the present invention will be described.

4 is a vertical sectional view of a sputtering apparatus having a split magnet according to another embodiment of the present invention.

A sputtering apparatus 200 having a split magnet according to another embodiment of the present invention includes a vacuum chamber 110, a substrate 120, a substrate support 130, a target 140, a magnet unit 250, 160 and a gas injection unit 170.

The sputtering apparatus 200 having the split magnet according to another embodiment of the present invention has a different structure of the magnet unit 250 as compared with the sputtering apparatus 100 having the split magnet according to FIGS. 1A to 3B. Therefore, the sputtering apparatus 200 having the split magnet according to another embodiment of the present invention will be described with reference to the magnet unit 250. In addition, the sputtering apparatus 200 having the split magnet has the same reference numerals as those of the sputtering apparatus 100 having the split magnet according to FIGS. 1 to 3B, and detailed description thereof will be omitted.

On the other hand, in the following description, front, front, rear, and rear sides refer to the plane or direction of the -y axis and the + y axis in FIG. 4, respectively. Further, the upper and lower or vertical directions refer to portions positioned in the direction toward the + z axis and the -z axis. Further, the horizontal direction or the left and right direction means + x and -x axis directions. In addition, the upper and lower portions may refer to positions relative to the + z axis and the -z axis in one component.

The magnet unit 250 includes a central magnet unit 350, an upper magnet unit 450, and a lower magnet unit 550. The magnet unit 250 may further include a central transfer unit 650.

The magnet unit 250 is formed as a plurality of units that extend in the vertical direction and are divided.

The magnet unit 250 is formed such that the center magnet unit 350 interlocks with the upper magnet unit 450 and the lower magnet unit 550 and is moved back and forth to adjust the distance from the target 140. In addition, the magnet unit 250 is formed so that the central magnet unit 350 can be inclined as a whole while being tilted. At this time, the upper magnet unit 450 and the lower magnet unit 550 are also formed to be tilted together. The center distance between the center magnet unit 350 and the target 140 is the distance between the upper magnet unit 450 and the lower magnet unit 550 and the target 140, As shown in FIG. That is, the upper magnet unit 450 and the lower magnet unit 550 are formed so as to move back and forth apart from the central magnet unit 350.

The center magnet unit 350 includes a center magnet 351, a central base 353, a central ball screw 355, and a center motor 357. The center magnet unit 350 is formed such that the center magnet 351 is supported by the center base 353 and the center base 353 is moved back and forth by the center ball screw 355 and the center motor 357. In addition, the center magnet unit 350 is formed such that the center base 353 is tilted by the center ball screw 355 and the center motor 357, and the center magnet 351 is also tilted. Accordingly, the center magnet 351 is tilted so as to adjust the distance from the target 140 or to be inclined with respect to the vertical direction. In addition, the center magnet unit 350 can be moved in the horizontal direction by the central transfer unit 650. At this time, the upper magnet unit 450 and the lower magnet unit 550 are also moved in the horizontal direction.

The center magnet 351 is formed of a permanent magnet or an electromagnet, and is formed in a bar shape having a predetermined height and width extending in the vertical direction. The center magnet 351 is formed to have a height smaller than the entire height of the substrate, and preferably a height of 1/3 to 8/10 of the entire height of the substrate. The center magnet 351 is formed to adjust the distance from the target 140 according to a required plasma density. The center magnet 351 is coupled to the center base 353 by a separate coupling means (not shown).

The central base 353 is formed in a bar shape extending in the vertical direction and has a width corresponding to the width of the center magnet 351. The center base 353 may have a height greater than the height of the center magnet 351 so as to form an area where the upper magnet unit 450 and the lower magnet unit 550 located at the upper and lower portions of the center magnet 351 are formed, As shown in Fig. That is, the central base 353 includes a central region 353a to which the center magnet 351 is coupled, an upper region 353b to which the upper magnet unit 450 and the lower magnet unit 550 are coupled, (353c). The front surface of the central base 353 is coupled to the rear surface of the center magnet 351 to advance and retract the center magnet 351.

The central base 353 may be formed with a first bracket 354a and a first rotation pin 354b on the rear side to which the center ball screw 355 is coupled. The first bracket 354a and the first rotation pin 354b are formed above and below the center base 353, respectively. The first rotation pin 354b is rotatably coupled to the first bracket 354a by a bearing (not shown) or the like. The first bracket 354a supports the first rotation pin 354b at both sides of the first rotation pin 354b or supports the first rotation pin 354b at the center of the first rotation pin 354b . In addition, the first rotation pin 354b is formed to have a length longer than a distance in which the central ball screw 355 to be coupled moves in the horizontal direction.

Accordingly, the center base 353 can move in the horizontal direction with respect to the center ball screw 355. That is, the first rotation pin 354b moves in the horizontal direction with respect to the center ball screw 355 fixed with respect to the horizontal direction, so that the center base 353 can be moved in the horizontal direction. The central base 353 is reciprocated by a predetermined distance in the horizontal direction by a central transfer unit 650, which will be described in detail below.

The central region 353a is formed to have a height corresponding to the center magnet 351. The upper region 353b and the lower region 353c are respectively formed on the upper and lower portions of the center magnet 351, respectively. The upper region 353b and the lower region 353c are formed in a stepped groove shape with respect to the central region 353a. The upper region 353b and the lower region 353c accommodate a portion of the upper magnet unit 450 and the lower magnet unit 550. The upper region 353b and the lower region 353c provide a space where the upper magnet unit 450 and the lower magnet unit 550 can move back and forth apart from the central magnet unit 350. [

The front end of the center ball screw 355 is coupled to the rear surface of the center base 353 and is vertically coupled by a separate bearing member (not shown) based on the engagement position of the center base 353. That is, the center ball screw 355 is coupled to the first rotation pin 354b and rotatably coupled up and down. The first rotation pin 354b is movably coupled to the center ball screw 355 in the horizontal direction. The rear side of the central ball screw 355 is coupled to the rotation shaft of the central motor 357. The central ball screw 355 is formed at least two vertically spaced apart from the rear surface of the central region 353a of the central base 353. The center ball screw 355 rotates to move the center base 353 up and down while supporting the center base 353 up and down.

The center motor 357 is located outside the vacuum chamber 110 and the rotation axis extends into the vacuum chamber 110 and is coupled to the rear end of the central ball screw 355. The central motor 357 rotates the central ball screw 355. The two central motors 357 operate simultaneously to move the center base 353 and the center magnet 351 back and forth. Also, the center motor 357 operates either one of the two motors or the two motors at different rotational speeds to rotate the center base 353 and the center magnet 351. The center motor 357 may be formed of a servomotor capable of controlling the rotation speed.

The upper magnet unit 450 includes an upper magnet 451, an upper base 453, an upper ball screw 455, an upper universal joint 457, and an upper motor 459. The upper magnet unit 450 is formed such that the upper magnet 451 is moved back and forth independently or together with the center magnet 351 and is tilted together with the center magnet 351. At this time, the upper magnet 451 is formed so as to move back and forth independently of the center magnet 351 in a tilted state. The upper magnet unit 450 is horizontally reciprocated together with the central magnet unit 350.

The upper magnet 451 is formed of the same magnet as the center magnet 351, and is formed in a bar shape having a predetermined height and width extending in the vertical direction. The upper magnet 451 is positioned above the center magnet 351 and has a height smaller than that of the center magnet 351. The upper magnet 451 is preferably formed to have a height of 1/10 to 1/3 of the overall height of the substrate. Also, the height of the upper magnet 451 may be determined by reflecting the height of the upper region, which is different in film thickness from the central region, based on the thickness of the film formed on the substrate. The upper magnet 451 is moved back and forth together with the central magnet 351 or tilted. In addition, the upper magnet 451 is formed so as to move back and forth independently of the center magnet 351. In addition, the upper magnet 451 is formed so as to move back and forth independently from the center magnet 351 in a state of being tilted together with the center magnet 351. Therefore, the distance between the upper magnet 451 and the target 140 may be adjusted to be different from the distance between the center magnet 351 and the target 140. Therefore, the distance between the upper magnet 451 and the target 140 can be adjusted according to the required plasma density.

The upper base 453 is formed in a bar shape extending in the vertical direction and has a width and a height corresponding to the width and height of the upper magnet 451. The upper base 453 is coupled with the upper magnet 451 to support the upper magnet 451, thereby moving the upper magnet 451 forward and backward and tilting the upper magnet 451. In addition, the upper base 453 can be reciprocated in the horizontal direction.

The upper ball screw 455 has a front end coupled to the rear surface of the upper base 453 and a rear end connected to the upper universal joint 457. The upper ball screw 455 may be accommodated in the upper region 353b of the central base 353 or extend through the upper region 353b of the central base 353. [ The upper ball screw 455 causes the upper base 453 to move back and forth.

The upper universal joint 457 is coupled between the rear end of the upper ball screw 455 and the upper motor 459. The upper universal joint 457 is configured such that the center base 353 and the upper base 453 are tilted so that even when the angle between the rotation axis of the upper motor 459 and the upper ball screw 455 is not straight, So that the rotational force of the upper ball screw 455 is transmitted to the upper ball screw 455. Accordingly, the upper base 453 is moved forward and backward by the upper ball screw 455 in a tilted state. The upper universal joint 457 adjusts the angle between the rotation axis of the upper motor 459 and the upper ball screw 455 so that the upper base 453 is reciprocated in the horizontal direction together with the central base 353.

The upper motor 459 is located outside the vacuum chamber 110 and the rotation axis extends into the vacuum chamber 110 to be coupled with the upper universal joint 457. The upper motor 459 rotates to rotate the upper universal joint 457. The upper motor 459 may be formed of a servo motor capable of controlling the rotation speed precisely.

The lower magnet unit 550 includes a lower magnet 551, a lower base 553, a lower ball screw 555, a lower universal joint 557, and a lower motor 559. The lower magnet unit 550 is formed such that the lower magnet 551 moves forward or backward independently of or together with the center magnet 351 and is tilted together with the center magnet 351.

The lower magnet 551 is formed of the same magnet as the center magnet 351, and is formed in a bar shape having a predetermined height and width extending in the vertical direction. The lower magnet 551 is positioned below the center magnet 351 and has a height smaller than that of the center magnet 351. The lower magnet 551 is formed to have the same height as the upper magnet 451, and is preferably formed to have a height of 1/10 to 1/3 of the entire height of the substrate. The lower magnet 551 is moved back and forth along with the center magnet 351 and the upper magnet 451 or tilted. Further, the lower magnet 551 is formed so as to move back and forth independently of the center magnet 351. The lower magnet 551 is formed so as to move back and forth independently from the center magnet 351 and the upper magnet 451 while being tilted together with the center magnet 351 and the upper magnet 451. Therefore, the distance between the lower magnet 551 and the target 140 may be adjusted to be different from the distance between the center magnet 351 and the target 140. The lower magnet 551 is formed to adjust the distance from the target 140 according to a required plasma density.

The lower base 553 is formed in a bar shape extending in the vertical direction and has a width and a height equal to or smaller than the width and height of the lower magnet 551. In addition, the lower base 553 is combined with the lower magnet 551 to support the lower magnet 551 to advance and retreat and tilt.

The front end of the lower ball screw 555 is coupled to the rear surface of the lower base 553, and the rear end of the lower ball screw 555 is coupled to the lower universal joint 557. At this time, the lower ball screw 555 penetrates the lower region 353c of the center base 353 and is coupled to the lower universal joint 557. The lower ball screw 555 rotates to move the lower base 553 back and forth.

The lower universal joint 557 is coupled between the rear end of the lower ball screw 555 and the lower motor 559. The lower universal joint 557 can move the lower motor 559 even when the center base 353 and the lower base 553 are tilted so that the angle between the rotation axis of the lower motor 559 and the lower ball screw 555 is not straight, So that the rotational force of the lower ball screw 555 is transmitted to the lower ball screw 555. Accordingly, the lower base 553 is moved forward and backward by the lower ball screw 555 in a tilted state. The lower universal joint 557 adjusts the angle between the rotation axis of the lower motor 559 and the lower ball screw 555 in the horizontal direction so that the lower base 553 is reciprocated in the horizontal direction together with the center base 353 .

The lower motor 559 is located outside the vacuum chamber 110 and the rotation axis extends into the vacuum chamber 110 to be coupled with the lower universal joint 557. The lower motor 559 rotates to rotate the lower universal joint 557. The lower motor 559 may be formed of a servomotor capable of controlling the rotation speed.

The central transfer unit 650 includes a spline 651, a central support plate 653, a central support shaft 655, and a central transfer motor 657. The central transfer unit 650 supports the central base 353 so that the central base 353 stably moves forward and backward. The central transfer unit 650 reciprocally moves the center magnet unit 350, the upper magnet unit 450, and the lower magnet unit 550 in a horizontal direction at a predetermined distance. Meanwhile, the central transfer unit 650 may be configured to reciprocate the magnet unit 250 horizontally in the sputtering apparatus.

The front end of the spline 651 is coupled to the rear surface of the central base 353 and is vertically coupled with respect to the coupling position of the center base 353. The splines 651 are formed at least two and are spaced apart from each other in the vertical direction. Further, the rear side of the spline 651 is coupled to the center support plate 653. The splines 651 are vertically coupled to the respective central bases 353 when a plurality of central magnet units 350 are formed.

The spline 651 is formed as a general spline. That is, the spline 651 includes a spline shaft and a spline boss, and is coupled to the rear surface of the center base 353 and the front surface of the center support plate 653, respectively. The spline 651 supports the center base 353 while the spline shaft moves back and forth inside the spline boss when the center base 353 is moved back and forth.

When the central base 353 is tilted, the spline 651 rotates on the basis of the coupling position with the central base 353 and supports the central base 353. A second bracket 354c and a second rotation pin 354d are formed on the rear surface of the central base 353 to which the front end of the spline 651 is coupled. Also, the spline 651 may be rotatably coupled to the center support plate 653 at the rear end. Therefore, the third bracket 653a and the third rotation pin 653b may be formed on the rear surface or the front surface of the central support plate 653. [ Therefore, the front end and the rear end of the spline 651 are rotatably coupled to the center base 353 and the center support plate 653, respectively.

 The center support plate 635 is formed in a plate shape and has a front surface facing the rear surface of the central base 353. The center support plate 653 is engaged with the rear ends of the splines 651 spaced vertically to fix the rear side of the splines 651. Meanwhile, the center support plate 653 is formed so that a plurality of splines 651 coupled to the plurality of central bases 351 spaced in the horizontal direction are all coupled. Accordingly, the central support plate 653 allows the plurality of central bases 351 to be moved together in the horizontal direction.

The front end of the center support shaft 655 is coupled to the rear surface of the center support plate 653 and the rear side extends through the wall of the vacuum chamber 110. The center support shaft 655 supports the center support plate 653 and is reciprocated in the horizontal direction. Meanwhile, a through hole (not shown) is formed in the wall of the vacuum chamber 110 to transfer the center support shaft 655 in the horizontal direction.

The center conveying motor 657 engages with the rear end of the center support shaft 655 and reciprocates the center support shaft 655 in the horizontal direction. Although not shown in detail, the central feed motor 657 is formed by including a reducer and a ball screw at an end of the motor shaft. Therefore, the central feed motor 657 reciprocates the center support shaft 655 in the horizontal direction.

Next, the operation of a sputtering apparatus having a split magnet according to another embodiment of the present invention will be described.

Hereinafter, the operation of the magnet unit 250 will be mainly described. The process of adjusting the distance between the target 140 and the magnet unit 250 while maintaining the tilted state after the substrate is mounted on the substrate support will be described. At this time, the target 140 may maintain a vertical state or a tilted state.

First, the two central motors 357 of the central magnet unit 350 simultaneously operate to rotate the central ball screw 355. The central base 353 is advanced as the central ball screw 355 rotates and the distance between the upper magnet 451 and the center magnet 351 and between the lower magnet 551 and the target 140 is simultaneously adjusted. At this time, the central transfer unit 650) stably supports the central base 353 that moves forward and backward while the spline shaft moves back and forth inside the spline boss.

A central motor 357 located at an upper portion of the two central motors 357 spaced vertically from the rear surface of the central base 353 operates to rotate the center ball 353, The screw 355 is rotated. As the central ball screw 355 rotates, the upper portion of the central base 353 advances toward the substrate and is tilted as a whole. At this time, since the center ball screw 355 is rotatably coupled to the center base 353, the axial direction is not perpendicular to the rear face of the center base 353, do. The upper ball screw 455 of the upper magnet unit 450 and the rotary shaft of the upper motor 459 are maintained in a connected state without being straightened by the upper universal joint 457. The rotation shaft of the lower ball screw 555 and the lower motor 559 of the lower magnet unit 550 is maintained in a connected state without being straightened by the lower universal joint 557. The center magnet 351, the upper magnet 451 and the lower magnet 551 are also tilted by the tilting of the central base 353,

Next, the upper motor 459 of the upper magnet unit 450 operates to rotate the upper ball screw 455. At this time, since the upper base 453 and the upper magnet 451 are in a state of being tilted, the axis of the rotation shaft of the upper motor 459 and the axis direction of the upper ball screw 455 are not maintained in a straight line. However, the rotational force of the upper motor 459 is transmitted to the upper ball screw 455 by the upper universal joint 457 coupled between the upper motor 459 and the upper ball screw 455. The upper base 453 and the upper magnet 451 are advanced according to the rotation of the upper ball screw 455 and the distance between the upper magnet 451 and the target 140 is smaller than the center magnet 351 .

The lower magnet unit 550 operates in the same manner as the upper magnet unit 450 and the distance between the lower magnet 551 and the target 140 becomes smaller than the center magnet 351. Meanwhile, the upper magnet unit 450 and the lower magnet unit 550 may operate simultaneously, and only one of them may be operated separately.

The present invention is not limited to the above-described embodiment, and various modifications and variations of the present invention are possible in light of the above teachings. It will be apparent to those skilled in the art that various modifications and variations can be made to the sputtering apparatus, It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

100, 200; Sputtering device with split magnet
110; A vacuum chamber 120; Board
130; A substrate support 140; target
150, 250; Magnet portions 150a, 150b, 150c; Split magnet
160; Evolution 170; The gas-
350; Central magnet unit 450: Upper magnet unit
550: Lower magnet unit

Claims (13)

1. A sputtering apparatus comprising: a substrate; a target positioned in an area opposed to the substrate; and a plurality of magnet parts positioned in a region facing the target, the plurality of magnet parts having a length in a vertical direction, ,
Wherein each of the magnet portions includes a plurality of dividing magnets divided in the longitudinal direction so that a distance between the magnet portion and the target can be independently adjusted. The method according to claim 1,
Wherein the distance between the split type magnet and the target corresponding to the upper side region and the lower side region in the vertical direction is smaller or larger than the distance between the divided type magnet and the target corresponding to the central region in the vertical direction. The method according to claim 1,
Each of the split magnets
A magnet unit;
A ball shaft coupled to the magnet unit and passing through the wall of the chamber;
A shaft guide coupled to the magnet unit and passing through a wall of the chamber;
A unit support through which the ball guide and the shaft guide penetrate through the support base; And
And a distance adjusting unit coupled to a ball shaft passing through the unit support to adjust a moving distance of the magnet unit. The method of claim 3,
Wherein the distance adjusting unit is a handle or a motor coupled to the ball shaft. A target positioned in an area opposed to the substrate; a target positioned in a region opposed to the target, the target having a length in a direction of an upper region, a center region, and a lower region, the direction of the left region, And a plurality of magnet portions spaced apart from each other,
Wherein each of the magnet portions includes a plurality of dividing magnets divided in the longitudinal direction so that a distance between the magnet portion and the target can be independently adjusted. 6. The method of claim 5,
Wherein the distance between the dividing magnet corresponding to the upper region and the lower region and the target is smaller or larger than the distance between the dividing magnet and the target corresponding to the central region. 6. The method of claim 5,
Each of the split magnets
A magnet unit;
A ball shaft coupled to the magnet unit and passing through the wall of the chamber;
A shaft guide coupled to the magnet unit and passing through a wall of the chamber;
A unit support through which the ball guide and the shaft guide penetrate through the support base; And
And a distance adjusting unit coupled to a ball shaft passing through the unit support to adjust a moving distance of the magnet unit. 8. The method of claim 7,
Wherein the distance adjusting unit is a handle or a motor coupled to the ball shaft. A sputtering apparatus comprising: a substrate; a target positioned in an area opposite to the substrate; and a plurality of magnet portions positioned in a region facing the target, the plurality of magnet portions having a length in a vertical direction, As a result,
The magnet portion
A central magnet unit including a central magnet, the central magnet unit being configured to be reciprocated and tilted relative to the target;
An upper magnet unit including an upper magnet disposed on an upper portion of the center magnet, the upper magnet unit being formed so as to move back and forth independently of or together with the central magnet;
And a lower magnet unit including a lower magnet positioned below the center magnet, wherein the lower magnet is formed to be movable back and forth independently of the center magnet. 10. The method of claim 9,
The upper magnet of the upper magnet unit is formed to be tilted together with the central magnet,
Wherein the lower magnet of the lower magnet unit is formed to be tilted together with the center magnet. 10. The method of claim 9,
The center magnet unit
A central base having a central region coupled to a rear surface of the central magnet, an upper region formed at an upper portion of the central region, and a lower region formed at a lower portion of the central region,
At least two central ball screws coupled to the upper and lower portions of the central region of the central base, respectively coupled to rotate up and down with reference to the engaged position of the central base,
And at least two central motors coupled to the central ball screw for rotating the central ball screw. 12. The method of claim 11,
The center magnet unit
The center motor is operated by two to move the center base and the center magnet back and forth,
Wherein either one of the two is operated or the two spindles are rotated at different rotational speeds to tilt the central magnet and the central magnet. 12. The method of claim 11,
The upper region and the lower region are formed in a stepped groove shape with respect to the central region,
The upper magnet unit
An upper base coupled to a rear surface of the upper magnet and received in the upper region,
An upper ball screw penetrating through the upper region and coupled to a rear surface of the upper base,
An upper universal joint coupled to the upper ball screw,
And an upper motor coupled to the upper universal joint,
The lower magnet unit
A lower base coupled to a rear surface of the lower magnet and received in the lower region,
A lower ball screw penetrating the lower region and coupled to a rear surface of the lower base,
A lower universal joint coupled to the lower ball screw,
And a lower motor coupled to the lower universal joint.

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