KR20140007523A - Heat treatment chamber and method of substrate using variable wavelength, and heat treatment apparatus of substrate having the same - Google Patents

Heat treatment chamber and method of substrate using variable wavelength, and heat treatment apparatus of substrate having the same Download PDF

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KR20140007523A
KR20140007523A KR1020120074394A KR20120074394A KR20140007523A KR 20140007523 A KR20140007523 A KR 20140007523A KR 1020120074394 A KR1020120074394 A KR 1020120074394A KR 20120074394 A KR20120074394 A KR 20120074394A KR 20140007523 A KR20140007523 A KR 20140007523A
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South Korea
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heat treatment
substrate
infrared lamp
chambers
heat sources
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KR1020120074394A
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Korean (ko)
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성노영
사공동식
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주식회사 나래나노텍
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Priority to KR1020120074394A priority Critical patent/KR20140007523A/en
Publication of KR20140007523A publication Critical patent/KR20140007523A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

Disclosed are a substrate heat treatment chamber using variable wavelength, a method thereof, and substrate heat treatment apparatus having the substrate heat treatment chamber. The substrate heat treatment chamber comprises: an upper and a lower housing for forming a space for a substrate to be heat treated inside the chamber; a holder on which the substrate is installed inside the space; a boat in which the holder is loaded and supported; an upper and a lower window plate provided for the lower side of the upper housing and the inner side of the lower housing respectively; and a plurality of upper and lower heat sources for heating films coated on the substrate between the upper and lower housings and the upper and lower window plates. Based on the heat treatment temperature of the film, the wavelength of the upper and lower heat sources is variably controlled.

Description

Heat Treatment Chamber and Method of Substrate Using Variable Wavelength, and Heat Treatment Apparatus of Substrate Having the Same}

The present invention relates to a substrate heat treatment chamber and method using a variable wavelength, and a substrate heat treatment apparatus having the same.

More specifically, the present invention is to adjust the power of the plurality of heat sources provided outside the substrate heat treatment space to variably control the wavelength band required in the drying process and the firing process of the substrate to an optimized wavelength band, But also a substrate heat treatment chamber and method using a variable wavelength that can effectively and quickly remove organic and inorganic substances in the film applied on the substrate, significantly reduce the heat treatment time of the film, and minimize the possibility of failure of the final product, and It relates to a substrate heat treatment apparatus having the same.

An annealing apparatus used for manufacturing semiconductors, flat panel displays, and solar cells is an apparatus for performing heat treatment necessary for crystallization, phase change, and the like on a predetermined film deposited on a substrate such as a silicon wafer or glass .

A typical annealing apparatus is a silicon crystallization apparatus for crystallizing amorphous silicon deposited on a glass substrate into polysilicon when a liquid crystal display or a thin film crystalline silicon solar cell is manufactured.

In order to perform such a crystallization process, a heat treatment apparatus capable of heating a substrate on which a predetermined thin film (hereinafter referred to as a "film") is formed must be provided. For example, for crystallization of amorphous silicon, a temperature of at least 550 to 600 DEG C is required.

Generally, a heat treatment apparatus includes a single-wafer type in which heat treatment can be performed on one substrate, and a batch type in which heat treatment can be performed on a plurality of substrates. There is a merit of simple configuration of the apparatus, but there is a disadvantage that the productivity is low, and the batch formula is getting popular for the mass production in recent years.

FIG. 1 is a perspective view showing a configuration of a batch type heat treatment apparatus according to the prior art, FIG. 2 (a) is a perspective view showing a configuration of a chamber of a batch type heat treatment apparatus according to the prior art shown in FIG. 1, Fig. 5 is a perspective view showing the arrangement of the substrate, the main heater unit, and the auxiliary heater unit of the batch type heat treatment apparatus according to the first embodiment. Such a batch heat treatment apparatus according to the prior art is filed in Korean Patent Application No. 10-2008-0069329, entitled " Batch Heat Treatment Apparatus ", filed July 16, 2008 by Huh, Are described in detail in Korean Patent No. 10-1016048, filed on February 11,

1 to 2B, a batch type thermal processing apparatus 1 according to the related art includes a chamber 100 having a rectangular parallelepiped shape for providing a heat treatment space and a frame 110 for supporting the chamber 100, do.

A door 140 is installed at one side of the chamber 100 to open and close the chamber 100 in order to load the substrate 10 into the chamber 100. The substrate 10 can be loaded into the chamber 100 by using a substrate loading device (not shown) such as a transfer arm in a state where the door 140 is opened. On the other hand, after the heat treatment is completed, the substrate 10 may be unloaded from the chamber 100 through the door 140.

A cover 160 is provided on the upper side of the chamber 100 for repairing and replacing the boats 120, the gas supply pipes 300 and the gas discharge pipes 320 installed in the chamber 100 .

A main heater unit 200 for directly heating the substrate 10 in the chamber 100, an auxiliary heater unit 220 for preventing heat loss in the chamber 100, A cooling pipe 250 for rapidly cooling the inside of the cooling pipe 100 is installed.

Referring to FIGS. 2A and 2B, the main heater unit 200 includes a unit main heater 210 having a predetermined interval in parallel with the short side direction of the substrate 10. The unit main heater 210 is a conventional cylindrical heater having a long length and constitutes a main heater unit 200 in which a heating element is inserted into a quartz tube and external power is applied through terminals provided at both ends to generate heat Lt; / RTI >

A plurality of main heater units 200 are arranged at regular intervals along the stacking direction of the substrates 10. The substrate 10 is disposed between a plurality of main heater units 200. The substrate 10 is preferably disposed at the center between the main heater units 200.

As described above, in the batch type heat treatment apparatus 1 according to the related art, the main heater unit 200 configured as the unit main heater 210 capable of covering the entire area of the substrate 10 on the upper and lower portions of the substrate 10. ), The substrate 10 may be uniformly heat-treated by uniformly applying heat from the unit main heater 210 over the entire area.

2A and 2B, the auxiliary heater unit 220 includes a first auxiliary heater unit 220a disposed parallel to the short side direction of the substrate 10 and a second auxiliary heater unit 220b disposed along the long side direction of the substrate 10 And a second auxiliary heater unit 220b. The first auxiliary heater unit 220a includes a plurality of first unit auxiliary heaters 230a disposed at both sides of the main heater unit 200 in parallel with the unit main heater 210.

Figure 3a is a perspective view of the configuration of the boat used in the batch heat treatment apparatus according to the prior art.

Referring to FIG. 3A, a boat 120 for supporting the substrate 10 loaded into the chamber 100 is installed in the chamber 100. The boat 120 is preferably installed to support the long side of the substrate 10. In the boat 120 illustrated in FIG. 3A, six support members 122 are installed on each of three long sides of each board 10. However, the boat 120 is installed in a larger number for stable support of the board 10. It may be variously changed according to the size of the substrate 10. The boat 120 is preferably made of quartz.

In addition, referring to FIG. 3A, the substrate 10 is preferably loaded in the boat 120 in a state of being mounted to the holder 12. When the heat treatment temperature reaches the softening temperature of the plurality of substrates 10 during the heat treatment process, the substrate may be warped downward due to the weight of the substrate itself. In particular, It becomes a big problem. In order to solve this problem, heat treatment is performed while the substrate 10 is mounted on the holder 12.

The above-described batch type thermal processing apparatus 1 according to the related art can achieve heat treatment at the same time on a plurality of substrates loaded in the chamber, thereby achieving the effect of improving the productivity of the substrate, but still has the following problems.

1. The time required for the entire heat treatment step including the drying step and the firing step of the film 11 applied on the substrate 10 is approximately 5 hours or more, and the tack time is considerably long.

2. The main heater unit 200 composed of the unit main heater 210 used in the heat treatment process of the substrate 10 is, for example, a film such as a polyimide (PI) thin film coated on the substrate 10. Drying and crystallization processes are carried out. In this case, when the substrate 10 is heated by the main heater unit 200 of the prior art, the surface of the film is first cured when the film formed on the substrate 10 is heated and dried.

More specifically, Figure 3b is a view for schematically illustrating a problem that occurs during the heat treatment process of the substrate and the film applied on the substrate according to the prior art.

Referring to FIG. 3B together with FIGS. 2A and 2B, the substrate 10 according to the prior art and the film 11 applied on the substrate 10 are heated by the main heater unit 200 (see FIG. 2B). When the temperature rises, the surface 11s of the film 11 is first cured. In this case, the interior 11i of the film 11 is still uncured. Therefore, a problem arises in that bubbles or the like existing in the interior 11i of the film 11 cannot escape to the outside of the surface 11s of the cured film 11. As a result, defects occur in the final product when bubbles remain in the film 10.

Therefore, there is a need for a new method for solving the problems of the chamber and the batch heat treatment apparatus used in the batch heat treatment apparatus of the prior art described above.

Korean Patent No. 10-1016048

The present invention is to solve the above-described problem, by controlling the power of a plurality of heat sources provided outside the substrate heat treatment space to variably control the wavelength band required during the drying process and baking process of the substrate to the optimized wavelength band Thus, not only the substrate but also the organic and inorganic substances in the film applied on the substrate can be effectively and quickly removed, the heat treatment time of the film is significantly reduced, and the substrate heat treatment chamber using a variable wavelength which minimizes the possibility of defects in the final product. And a method, and a substrate heat treatment apparatus having the same.

A substrate heat treatment chamber according to a first aspect of the present invention includes: an upper and a lower housing provided to form a heat treatment space of a substrate therein; A holder provided in the heat treatment space and on which the substrate is mounted; A boat into which the holder is loaded and supported; Upper and lower window plates provided on an inner lower surface of the upper housing and an inner upper surface of the lower housing, respectively; And a plurality of upper and lower heat sources provided between the upper and lower housings and the upper and lower window plates, respectively, for heating the substrate and the film applied on the substrate, depending on the heat treatment temperature of the film. The wavelengths of the plurality of upper and lower heat sources are variably controlled.

A substrate heating apparatus according to a second aspect of the present invention includes: a plurality of chambers each providing a heat treatment space of a substrate; A frame in which the plurality of chambers are detachably supported; And a plurality of doors provided in front of each of the plurality of chambers, wherein the plurality of chambers respectively include upper and lower housings provided to form a heat treatment space of a substrate therein; A holder provided in the heat treatment space and on which the substrate is mounted; A boat into which the holder is loaded and supported; Upper and lower window plates provided on an inner lower surface of the upper housing and an inner upper surface of the lower housing, respectively; And a plurality of upper and lower heat sources provided between the upper and lower housings and the upper and lower window plates, respectively, for heating the substrate and the film applied on the substrate, wherein the substrates in the plurality of chambers Each of the heat treatment is performed separately, characterized in that the wavelength of the plurality of upper and lower heat sources is variably controlled in accordance with the heat treatment temperature of the film.

Substrate heat treatment method according to a third aspect of the present invention comprises the steps of: a) loading and supporting a holder on which the substrate is mounted on a boat provided in a chamber providing a heat treatment space of the substrate, the upper and lower housings respectively; ; B) performing heat treatment by variably controlling wavelengths of a plurality of upper and lower heat sources provided outside the respective heat treatment spaces in the chamber according to the heat treatment temperature of the film applied on the substrate in the heat treatment space. Characterized in that it comprises a step.

According to a fourth aspect of the present invention, there is provided a substrate heat treatment method comprising: a) loading a holder on which a substrate is mounted on a boat, each of which is composed of an upper and a lower housing, each of which is provided in a plurality of chambers providing a heat treatment space of the substrate; Supporting; b) providing the plurality of chambers in a frame, respectively; And c) variably controlling the wavelengths of the plurality of upper and lower heat sources provided outside the respective heat treatment spaces according to the heat treatment temperatures of the film applied on the substrate in the respective heat treatment spaces in the plurality of chambers. And performing a heat treatment, wherein the film applied on the substrate in each heat treatment space is heat treated separately.

Using the substrate heat treatment chamber and method using a variable wavelength according to the present invention, and a substrate heat treatment apparatus having the same, the following effects are achieved.

1. Since the wavelength band emitted from the heat source during the drying and firing processes of the substrate is variably controlled to the optimized wavelength band required for each process, organic and inorganic substances in the film applied on the substrate are effectively and quickly removed.

2. The heat treatment time of the film is significantly reduced.

3. Since the surface and the inside of the film are heated at the same time, the possibility of bubbles or the like remaining inside the film is eliminated or minimized.

4. The above mentioned advantages of 1 to 3 minimize the possibility of failure of the final product.

Further advantages of the present invention can be clearly understood from the following description with reference to the accompanying drawings, in which like or similar reference numerals denote like elements.

1 is a perspective view showing a configuration of a batch type heat treatment apparatus according to the prior art.
FIG. 2A is a perspective view showing a configuration of a chamber of the batch type heat treatment apparatus according to the prior art shown in FIG. 1. FIG.
FIG. 2B is a perspective view showing the arrangement of the substrate, the main heater unit, and the auxiliary heater unit of the batch type heat treatment apparatus according to the related art.
Figure 3a is a perspective view of the configuration of the boat used in the batch heat treatment apparatus according to the prior art.
3B is a view for schematically explaining a problem occurring in the heat treatment process of the substrate and the film applied on the substrate according to the prior art.
4A is a cross-sectional view illustrating a specific configuration of a substrate heat treatment chamber according to an embodiment of the present invention.
4B is a cross-sectional view illustrating a schematic configuration of a substrate heat treatment chamber according to an embodiment of the present invention illustrated in FIG. 4A.
4C is a diagram illustrating graphs of transmission and absorption characteristics of upper and lower window plates according to an exemplary embodiment of the present invention.
4D is a diagram showing the relationship between energy intensity and wavelength when a near infrared lamp heater having a peak wavelength of 1.4 μm at maximum power is 20-40% of the maximum power.
4E shows the relationship between energy intensity and wavelength when a near infrared lamp heater with a peak wavelength of 1.4 μm at maximum power is 60-80% of the maximum power.
4F and 4G are graphs showing a power ratio of a near infrared lamp heater according to a set temperature for each section of a recipe cycle of a substrate heat treatment process including a drying process and a firing process according to an embodiment of the present invention, respectively; It is a chart.
Figure 4h is a perspective view showing a substrate heat treatment apparatus according to an embodiment of the present invention having a plurality of chambers for substrate heat treatment according to an embodiment of the present invention.
5A is a flowchart showing a substrate heat treatment method according to the first embodiment of the present invention.
5B is a flowchart showing a substrate heat treatment method according to the second embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described with reference to embodiments and drawings of the present invention.

Figure 4a is a cross-sectional view showing a specific configuration of the substrate heat treatment chamber according to an embodiment of the present invention, Figure 4b is a cross-sectional view showing a schematic configuration of a substrate heat treatment chamber according to an embodiment of the present invention shown in Figure 4a to be.

4A and 4B, the substrate heat treatment chamber 400 according to an embodiment of the present invention includes upper and lower housings provided to form a heat process space 472 of the substrate 10 therein. 470a, 470b); A holder 12 provided in the heat treatment space 472 and on which the substrate 10 is mounted; A boat (420) on which the holder (12) is loaded and supported; Upper and lower window plates 474a and 474b provided on an inner lower surface of the upper housing 470a and an inner upper surface of the lower housing 470b, respectively; And between the upper and lower housings 470a and 470b and the upper and lower window plates 474a and 474b, respectively, to heat the substrate 10 and the film 11 coated on the substrate 10. To include a plurality of upper and lower heat sources (410a, 410b), characterized in that the wavelength of the plurality of upper and lower heat sources (410a, 410b) is controlled in accordance with the heat treatment temperature of the film (11) . Here, the variable control of the wavelengths of the plurality of upper and lower heat sources 410a and 410b is made by adjusting the output of the power of the plurality of upper and lower heat sources 410a and 410b.

In the substrate heat treatment chamber 400 according to the embodiment of the present invention described above. The upper and lower housings 470a and 470b are provided on the rear surfaces of the plurality of upper and lower heat sources 410a and 410b, respectively, and reflect heat energy emitted from the plurality of upper and lower heat sources 410a and 410b. And a plurality of upper and lower reflectors 412a and 412b for radiating thermal energy to the substrate 10 and the film 11 through the upper and lower window plates 474a and 474b.

In the above-described embodiment of the present invention, it is preferable that only one or two substrates 10 are used in the substrate heat treatment chamber 400 shown in FIG. 4A. This is because a plurality of upper and lower heat sources 410a and 410b are provided outside the heat treatment space 472 so that when three or more substrates 10 are used in the heat treatment space 472, The heat energy of the plurality of upper and lower heat sources 410a and 410b is not sufficiently transferred to one or more intermediate substrates existing in the intermediate substrate, and heat treatment is not properly performed. Although it is illustrated that two substrates 10 are used in the embodiment of Fig. 4A, one of ordinary skill in the art will appreciate that one substrate 10 can be used.

Hereinafter, specific configurations and operations of the substrate heat treatment chamber 400 and the substrate heat treatment apparatus 1 according to the exemplary embodiment will be described in detail.

First, referring to FIG. 4A, a substrate thermal processing chamber 400 according to an embodiment of the present invention includes upper and lower housings 470a and 470b. The upper and lower housings 470a and 470b form a heat treatment space 472 of the substrate 10 therein.

In the heat treatment space 472, a boat 420 for loading and supporting the substrate 10 is provided. In addition, upper and lower window plates 474a and 474b are provided on an inner lower surface of the upper housing 470a and an inner upper surface of the lower housing 470b, respectively. The upper and lower window plates 474a and 474b may be made of quartz or neo ceramic material, respectively.

A plurality of upper and lower heat sources 410a and 410b are provided between the upper and lower housings 470a and 470b and the upper and lower window plates 474a and 474b, respectively. The upper and lower housings 470a and 470b may be made of aluminum (Al), respectively, and the plurality of upper and lower heat sources 410a and 410b may be implemented as near infrared lamp heaters, respectively. In this case, the near-infrared lamp heater emits near-infrared rays in the wavelength range of approximately 1 to 5 탆 suitable for heating, drying, and firing the substrate 10 made of SiO 2 and the film 11 applied on the substrate 10. It is desirable to.

The above-described upper and lower window plates 474a and 474b of the present invention have near-infrared light in the wavelength range of approximately 1 to 5 탆, for example, emitted from the plurality of upper and lower heat sources 410a and 410b implemented by near-infrared lamp heaters. Passes, while bands other than the wavelength band are cut-off. Accordingly, the plurality of upper and lower heat sources 410a and 410b directly transfer thermal energy to the substrate 10 through the upper and lower window plates 474a and 474b, respectively, to radiate the substrate 10 and the substrate ( 10) The film 11 (for example, polyimide (PI)) applied to the upper part is heat-treated. The drying process of the heat treatment process of the substrate 10 is performed at a relatively low temperature of approximately 150 ℃, the crystallization process is performed at a relatively high temperature of approximately 450 ℃.

4C is a diagram illustrating graphs of transmission and absorption characteristics of upper and lower window plates according to an exemplary embodiment of the present invention.

Referring to FIG. 4C together with FIGS. 4A and 4B, upper and lower window plates 474a and 474b used in one embodiment of the present invention are embodied in quartz, respectively, and a plurality of upper and lower heat sources 410a and 410b are provided. Each is implemented with a near infrared (NIR) lamp heater. In this case, the substrate 10 is 0.7 mm (specifically in the case of an LCD substrate), 1.0 mm, 2.0 mm, 3.0 mm, and 5.0 mm (specifically, in the case of a plate of glass material other than the LCD substrate) The NIR emitted from the NIR lamp heater for the case having five thicknesses of Rx) penetrates the upper and lower window plates 474a and 474b in the wavelength band ranging from approximately 1 to 5 mu m. In this case, the upper and lower window plates 474a and 474b show a transmittance of 90% or more in the near infrared, especially when the peak value of the wavelength is approximately 2.0 μm or less. From these results, in the present invention, the drying process performed at a relatively low temperature during the heat treatment process of the substrate 10 is performed using a relatively long wavelength (that is, about 2.0 μm or more, preferably about 2.5 μm or more) having low energy intensity. The crystallization process, which takes place at a relatively high temperature, can be performed using a relatively short wavelength (ie, approximately 2.0 μm or less) with high energy intensity.

Accordingly, the plurality of upper and lower heat sources 410a and 410b, each of which is implemented as a near infrared lamp heater, emit a wavelength of 2.0 μm or more for the drying process of the substrate 10, and a wavelength of 2.0 μm or less for the crystallization process. It is preferable to release. To this end, changes in the peak wavelength at the maximum power of the plurality of upper and lower heat sources 410a and 410b and the peak wavelength when the maximum power is reduced are applied to the drying process and the firing process shown in FIG. 4C. It is desired to select a near infrared (NIR) lamp heater that satisfies suitable wavelength conditions and temperature conditions.

4D is a diagram showing the relationship between energy intensity and wavelength when the near infrared lamp heater having a peak wavelength of 1.4 μm at full power is 20-40% of the maximum power. FIG. 4E is a near infrared ray having a peak wavelength of 1.4 μm at full power. Figure shows the relationship between the energy intensity and the wavelength when the lamp heater is 60-80% of the maximum power.

Referring to FIG. 4D, when the near-infrared lamp heater emitting a fast response medium wave (FRMW) with a peak wavelength of 1.4 μm at maximum power is 20-40% of the maximum power, the peak wavelength is 2.5 μm. It emits a medium wave. The relative energy intensity corresponding to this intermediate wave is 100, and the temperature of the filament of the near-infrared lamp heater used corresponds to 900 ° C.

4E, the peak wavelength is approximately 60-80% of the maximum power when the near-infrared lamp heater emitting a fast response medium wave (FRMW) with a peak wavelength of 1.4 μm at full power. Emits a medium wave of 1.9 µm. The near-infrared lamp heater corresponds to a carbon twin lamp heater, and the relative energy intensity is approximately 120, and the temperature of the filament (specifically, carbon) of the near-infrared lamp heater used corresponds to 1,200 ° C.

Therefore, as described above, when the plurality of upper and lower heat sources 410a and 410b are each implemented as near infrared lamp heaters, selecting a near infrared lamp heater that emits a peak wavelength of 1.4 μm at maximum power, as shown in FIG. 4C. The wavelength conditions suitable for the drying process and the baking process, and the temperature conditions can be satisfied. At this time, the power of the selected near-infrared lamp heater is reduced to 20-40% of the maximum power for the drying process so that a peak wavelength of 2.0 μm or more (specifically, a peak wavelength of 2.5 μm) is emitted, and the firing process is selected. The power of the near-infrared lamp heater is reduced to 60-80% of the maximum power so that a peak wavelength of 2.0 mu m or less (peak wavelength of approximately 1.9 mu m) is emitted.

4F and 4G are graphs showing a power ratio of a near infrared lamp heater according to a set temperature for each section of a recipe cycle of a substrate heat treatment process including a drying process and a firing process according to an embodiment of the present invention, respectively; It is a chart.

4F and 4G, the first section of the substrate heat treatment process is an idle moving section, the section duration is 30 minutes, and the set temperature is 100 ° C. In this case, each of the plurality of upper and lower heat sources 410a and 410b used in the present invention is used, and the power of the near-infrared lamp heater emitting a peak wavelength of 1.4 μm at the maximum power (based on 100 kW) is 15 kW at maximum power. Only 15% is used.

Thereafter, the second section is a dry rising section, and the section duration is 10 minutes, and the set temperature is 150 ° C. In this case, the power of the near infrared lamp heater is 40 kW and 40% of the maximum power is used. Thereafter, the third section is a dry stable section, the section duration is 30 minutes, the set temperature is 150 ℃. In this case, the power of the near infrared lamp heater is 30 kW, and 30% of the maximum power is used. These second and third sections are drying process sections, in which the solvent inside the film 11 (see FIG. 4B) such as polyimide (PI) applied on the substrate 10, for example. ) And the water is evaporated.

Thereafter, the fourth section is an imidization rising section, and the section duration is 20 minutes, and the set temperature is 250 ° C. In this case, the power of the near infrared lamp heater is 60 kW and 60% of the maximum power is used. Thereafter, the fifth section is an imidization stable section, and the section duration is 30 minutes, and the set temperature is 250 ° C. In this case, the power of the near infrared lamp heater is 40 kW and 40% of the maximum power is used. These fourth and fifth sections are sections in which the imidization process is started.

Thereafter, the sixth section is a crystallization rising section, and the section duration time is 30 minutes, and the set temperature is 450 ° C. In this case, the power of the near-infrared lamp heater is 80 kW and 80% of the maximum power is used. Thereafter, the seventh section is a crystallization stable section, the interval duration is 60 minutes, the set temperature is 450 ℃. In this case, the power of the near-infrared lamp heater is 65 kW, and 65% of the maximum power is used. The sixth and seventh sections are crystallization process sections. In this crystallization process section, for example, a densification process is performed through curing of polyimide (PI) applied on a substrate.

Thereafter, the eighth section is a falling section, the section duration is 60 minutes, the set temperature is 250 ℃. In this case, the power of the near infrared lamp heater is turned off or used up to 20 kW (ie up to 20% of the maximum power). Thereafter, the ninth section is a cooling section, and the duration of the section is 60 minutes, and the set temperature is 100 ° C. In this case, the power of the near infrared lamp heater is turned off.

In the substrate heat treatment process according to the embodiment of the present invention described above, the imidization process and the crystallization process are collectively called a firing process. Therefore, in the present invention, the power of the near-infrared lamp heater, which is used as the plurality of upper and lower heat sources 410a and 410b, respectively, is 20-40% of the maximum power in the drying process and 60-80% of the maximum power in the firing process. do. The peak wavelength emitted at this time is approximately 2.5 mu m in the drying process and 2.0 mu m or less in the firing process. That is, when the power of the near-infrared lamp heater is variably adjusted, the wavelength is variably controlled during the drying process and the firing process of the substrate to satisfy the wavelength conditions and temperature conditions suitable for the drying process and the firing process.

On the other hand, when using the near infrared lamp heater as the plurality of upper and lower heat sources (410a, 410b) of the present invention described above, the output power of the near infrared lamp heater can be controlled individually or in a group manner. have. The group method may be, for example, a method of simultaneously controlling the plurality of upper heat sources 410a as the first heat source group and simultaneously controlling the plurality of lower heat sources 410b as the second heat source group. It is possible to uniformly control the temperature of the substrate 10 by individual control or group method control of the output power of the plurality of upper and lower heat sources 410a and 410b. Therefore, since the temperature uniformity of the substrate 10 is improved, the likelihood of defect occurrence of the substrate 10 is ultimately greatly reduced.

In addition, in the drying process as described above, a peak wavelength of approximately 2.5 μm is emitted from the plurality of upper and lower heat sources 410a and 410b in the form of radiant energy, and then absorbed into the substrate 10 to quickly convert into thermal energy. At the same time it is converted, the solvent (organic) very quickly by resonance absorption, almost coinciding with the gap energy between the solvent inside the film 11 such as polyimide (PI) (see FIG. 4B) and the quantized energy level of the oscillation mode of water. And water can be evaporated. In addition, in the firing process, a peak wavelength having a high energy density of 2.0 μm or less emitted is absorbed by a film 11 such as polyimide (PI) applied on the substrate 10 so that curing of the film 11 is also quick. It is done. Thus, the overall heat treatment time of the film 11 is significantly reduced compared to the prior art.

In addition, in the above-described embodiment of the present invention, since the upper and lower window plates 474a and 474b have a very high transmittance to near infrared rays, the surface 11s and the interior 11i of the film 11 shown in FIG. 3B. Are simultaneously heated to eliminate or minimize the possibility of bubbles or the like remaining inside the film 11.

Figure 4h is a perspective view showing a substrate heat treatment apparatus according to an embodiment of the present invention having a plurality of substrate heat treatment chambers according to an embodiment of the present invention.

Referring to FIG. 4H together with FIGS. 4A to 4G, the substrate heat treatment apparatus 1 according to the exemplary embodiment includes a plurality of chambers 400a, 400b, 400c400d and 400e. The plurality of chambers 400a, 400b, 400c400d, and 400e provide a heat treatment space 472 of the substrate 10, respectively.

The plurality of chambers 400a, 400b, 400c, 400d, and 400e are detachably supported on the frame 410, respectively. A plurality of doors (not shown) are provided on the front surface of each of the plurality of chambers 400a, 400b, 400c, 400d, and 400e. The plurality of doors (not shown) may include a transfer arm for loading the holder 12 on which the substrate 10 is mounted into the heat treatment space 472 provided in each of the plurality of chambers 400a, 400b, 400c, 400d, and 400e. The same substrate loading device (not shown) may be used to open or close the holder 12 or to unload the holder 12 after the heat treatment has been completed.

In addition, the plurality of chambers 400a, 400b, 400c400d and 400e used in the substrate heat treatment apparatus 1 according to the exemplary embodiment of the present invention may be a substrate according to an embodiment of the present invention illustrated in FIGS. 4A and 4B, respectively. Note that it has the same configuration as the heat treatment chamber 400. Since the detailed configuration and operation of the substrate heat treatment chamber 400 according to the exemplary embodiment of the present invention illustrated in FIGS. 4A and 4B have already been described in detail, a detailed description thereof will be omitted.

As described above, in each of the plurality of chambers 400a, 400b, 400c400d, 400e of the substrate heat treatment chamber 400 and the substrate heat treatment apparatus 1 according to the embodiment of the present invention, a plurality of upper and lower heat sources 410a, and 410b are provided outside the processing space 472, respectively. In this case, the plurality of upper and lower heat sources 410a to variably control the wavelengths of the plurality of upper and lower heat sources 410a and 410b according to the heat treatment temperature of the film 11 applied on the substrate 10. The output of power 410b is adjusted.

In the substrate heating apparatus 1 according to an embodiment of the present invention, a plurality of upper and lower heat sources 410a and 410b provided in the plurality of chambers 400a, 400b, 400c, 400d, Failure or the like may occur. For example, in the embodiment of FIG. 4H, a failure or the like occurs in some of the plurality of upper and lower heat sources 410a and 410b in the chamber 400a among the plurality of chambers 400a, 400b, 400c, 400d and 400e. In addition, each of the substrates 10 in the remaining chambers 400a, 400b, 400c, 400d, and 400e may perform a normal heat treatment operation. Accordingly, the plurality of chambers 400a, 400b, 400c, 400d, and 400e according to the present invention can individually process each of the chambers 400a, 400b, 400c, 400d, and 400e, ) Is substantially eliminated.

In the substrate heating apparatus 1 according to an embodiment of the present invention, a plurality of upper and lower heat sources 410a and 410b provided in the plurality of chambers 400a, 400b, 400c, 400d, In the above example, only the chamber 400a in which the failure occurs can be repaired or replaced, and the remaining chambers 400a, 400b, 400c, 400d, and 400e can be normally operated. That is, in the embodiment of the present invention, the plurality of chambers 400a, 400b, 400c, 400d, and 400e can be individually maintained and the remaining chambers 400a, 400b, 400c, 400d, The total heat treatment process time (tact time) is greatly reduced since the heat treatment operation in the heat treatment units 400a to 400e need not be interrupted.

5A is a flowchart showing a substrate heat treatment method according to the first embodiment of the present invention.

Referring to FIG. 5A together with FIGS. 4A to 4G, the substrate heat treatment method 500 according to the first embodiment of the present invention includes a) each of the upper and lower housings 470a and 470b, and the substrate 10. Loading and supporting (510) the holder (12) on which the substrate (10) is mounted on a boat (420) provided in a chamber (400) providing a heat treatment space (472) of the substrate; And b) a plurality of externally provided in the chamber 400 outside the respective heat treatment spaces 472 according to the heat treatment temperature of the film 11 applied on the substrate 10 in the heat treatment space 472. And controlling the wavelengths of the upper and lower heat sources 410a and 410b to perform heat treatment 520.

In the substrate heat treatment method 500 according to the first embodiment of the present invention described above, the plurality of upper and lower heat sources 410a and 410b are individually controlled or controlled in a group manner.

In addition, in the step b) of the substrate heat treatment method 500 according to the first embodiment of the present invention, the control of the wavelengths of the plurality of upper and lower heat sources 410a and 410b may be performed. This is achieved by adjusting the power output of the heat sources 410a and 410b.

In addition, in the step b) of the substrate heat treatment method 500 according to the first embodiment of the present invention, the heat treatment includes a drying process and a firing process, and the plurality of upper and lower heat sources 410a and 410b are respectively maximized. It is implemented as a near infrared lamp heater that emits a peak wavelength of 1.4 μm in power, the power of the near infrared lamp heater is used 20-40% of the maximum power in the drying process, 60-80 of the maximum power in the firing process % Is used. At this time, the peak wavelength emitted by the near infrared lamp heater in the case of the drying process is approximately 2.5 μm, and the peak wavelength emitted by the near infrared lamp heater in the case of the firing process is 2.0 μm or less.

5B is a flowchart showing a substrate heat treatment method according to the second embodiment of the present invention.

Referring to FIG. 5B together with FIGS. 4A to 4H, the substrate heat treatment method 501 according to the second embodiment of the present invention includes a) each of the upper and lower housings 470a and 470b, and the substrate 10. Loading and supporting the holder 120 on which the substrate 10 is mounted on a boat 420 provided in each of the plurality of chambers 400a, 400b, 400c400d, and 400e providing a heat treatment space 472 of ( 510); b) providing (520) said plurality of chambers (400a, 400b, 400c400d, 400e) in a frame (410); And c) the respective heat treatment spaces according to the heat treatment temperature of the film 11 applied on the substrate 10 in the respective heat treatment spaces 472 in the plurality of chambers 400a, 400b, 400c400d, 400e. And performing a heat treatment by controlling the wavelengths of the plurality of upper and lower heat sources 410a and 410b provided outside of the 472 to perform the heat treatment, wherein the substrates in the respective heat treatment spaces 472 10) The film 11 applied on is characterized in that the heat treatment individually.

In the substrate heat treatment method 501 according to the second embodiment of the present invention described above, the plurality of upper and lower heat sources 410a and 410b are individually controlled or controlled in a group manner.

In addition, in the step c) of the substrate heat treatment method 501 according to the second embodiment of the present invention, the control of the wavelengths of the plurality of upper and lower heat sources 410a and 410b may be performed. This is achieved by adjusting the power output of the heat sources 410a and 410b.

In addition, in the step c) of the substrate heat treatment method 501 according to the second embodiment of the present invention, the heat treatment includes a drying process and a firing process, and the plurality of upper and lower heat sources 410a and 410b are respectively maximized. It is implemented as a near infrared lamp heater that emits a peak wavelength of 1.4 μm in power, the power of the near infrared lamp heater is used 20-40% of the maximum power in the drying process, 60-80 of the maximum power in the firing process % Is used. At this time, the peak wavelength emitted by the near infrared lamp heater in the case of the drying process is approximately 2.5 μm, and the peak wavelength emitted by the near infrared lamp heater in the case of the firing process is 2.0 μm or less.

In addition, in the substrate heat treatment method 501 according to the second embodiment of the present invention, when a failure occurs in some chambers of the plurality of chambers 400a, 400b, 400c400d, and 400e during the step c), While repairing or replacing only some of the chambers in which the failure occurs, step c) may be continued for the remaining chambers in which the failure does not occur.

Various modifications may be made by those skilled in the art without departing from the spirit and scope of the invention as defined by the following claims. It is not. Accordingly, the scope of the present invention should not be limited by the above-described exemplary embodiments, but should be determined only in accordance with the following claims and their equivalents.

DESCRIPTION OF SYMBOLS 1: Batch / substrate heat treatment apparatus 10: Substrate 11: Film 12: Holder
120, 420: Boats 100, 400, 400a, 400b, 400c, 400d, 400e:
110, 410: frame 140: door 160: cover 200: main heater unit
210: unit main heater 220, 220a, 220b: auxiliary heater unit
230a: first unit auxiliary heater 250: cooling pipe 300: gas supply pipe
320: gas discharge pipe 410a, 410b: heat source 412a, 412b:
470a, 470b: housing 472: heat treatment space 474a, 474b: window plate

Claims (19)

In the substrate heat treatment chamber,
An upper and a lower housing provided to form a heat treatment space of a substrate therein;
A holder provided in the heat treatment space and on which the substrate is mounted;
A boat into which the holder is loaded and supported;
Upper and lower window plates provided on an inner lower surface of the upper housing and an inner upper surface of the lower housing, respectively; And
A plurality of upper and lower heat sources respectively provided between the upper and lower housings and the upper and lower window plates for heating the substrate and the film applied on the substrate.
≪ / RTI >
The wavelengths of the plurality of upper and lower heat sources are variably controlled according to the heat treatment temperature of the film.
Substrate heat treatment chamber. The method of claim 1,
And the plurality of upper and lower heat sources are individually controlled or controlled in a group manner. The method of claim 1,
The variable control of the wavelengths of the plurality of upper and lower heat sources is made by adjusting the output of power of the plurality of upper and lower heat sources. The method of claim 1,
The plurality of upper and lower heat sources are each implemented with near-infrared lamp heaters that emit a peak wavelength of 1.4 μm at full power,
The power of the near-infrared lamp heater is 20-40% of the maximum power in the drying process of the heat treatment, 60-80% of the maximum power is used in the firing process of the heat treatment.
Substrate heat treatment chamber. 5. The method of claim 4,
In the case of the drying process, the peak wavelength emitted by the near infrared lamp heater is approximately 2.5 μm,
In the firing process, the peak wavelength emitted from the near infrared lamp heater is 2.0 μm or less.
Substrate heat treatment chamber. In the substrate heat treatment apparatus,
A plurality of chambers each providing a heat treatment space of the substrate;
A frame in which the plurality of chambers are detachably supported; And
A plurality of doors provided on a front surface of each of the plurality of chambers
Lt; / RTI >
The plurality of chambers
An upper and a lower housing provided to form a heat treatment space of a substrate therein;
A holder provided in the heat treatment space and on which the substrate is mounted;
A boat into which the holder is loaded and supported;
Upper and lower window plates provided on an inner lower surface of the upper housing and an inner upper surface of the lower housing, respectively; And
A plurality of upper and lower heat sources respectively provided between the upper and lower housings and the upper and lower window plates for heating the substrate and the film applied on the substrate.
/ RTI >
Wherein heat treatment of the substrate in the plurality of chambers is performed individually,
The wavelengths of the plurality of upper and lower heat sources are variably controlled according to the heat treatment temperature of the film.
Substrate heat treatment apparatus. The method according to claim 6,
And the plurality of upper and lower heat sources are individually controlled or controlled in a group manner. The method according to claim 6,
The plurality of upper and lower heat sources are each implemented with near-infrared lamp heaters that emit a peak wavelength of 1.4 μm at full power,
The power of the near-infrared lamp heater is 20-40% of the maximum power in the drying process of the heat treatment, 60-80% of the maximum power is used in the firing process of the heat treatment.
Substrate heat treatment apparatus. The method of claim 8,
In the case of the drying process, the peak wavelength emitted by the near infrared lamp heater is approximately 2.5 μm,
In the firing process, the peak wavelength emitted from the near infrared lamp heater is 2.0 μm or less.
Substrate heat treatment apparatus. In the substrate heat treatment method,
a) loading and supporting a holder on which the substrate is mounted on a boat, each of which is comprised of an upper and a lower housing and provided in a chamber providing a heat treatment space of the substrate; And
b) performing heat treatment by variably controlling the wavelengths of a plurality of upper and lower heat sources provided outside the respective heat treatment spaces in the chamber according to the heat treatment temperature of the film applied on the substrate in the heat treatment space.
/ RTI > The method of claim 10,
And said plurality of top and bottom heat sources are controlled individually or in a grouped manner. The method of claim 10,
And variably controlling the wavelengths of the plurality of upper and lower heat sources in step b) by adjusting outputs of power of the plurality of upper and lower heat sources. The method of claim 10,
In the step b), the heat treatment includes a drying process and a firing process,
The plurality of upper and lower heat sources are each implemented with near-infrared lamp heaters that emit a peak wavelength of 1.4 μm at full power,
The power of the near-infrared lamp heater is 20-40% of the maximum power in the drying process, 60-80% of the maximum power is used in the firing process.
Substrate heat treatment method. 14. The method of claim 13,
In the case of the drying process, the peak wavelength emitted by the near infrared lamp heater is approximately 2.5 μm,
In the firing process, the peak wavelength emitted from the near infrared lamp heater is 2.0 μm or less.
Substrate heat treatment method. In the substrate heat treatment method,
a) loading and supporting a holder on which the substrate is mounted on a boat, each of which is composed of an upper and a lower housing, each provided in a plurality of chambers providing a heat treatment space for the substrate;
b) providing the plurality of chambers in a frame, respectively; And
c) thermally controlling the wavelengths of the plurality of upper and lower heat sources provided outside the respective heat treatment spaces in accordance with the heat treatment temperature of the film applied on the substrate in the respective heat treatment spaces in the plurality of chambers. Steps to perform
, ≪ / RTI &
The films applied on the substrates in the respective heat treatment spaces are individually heat treated.
Substrate heat treatment method. 16. The method of claim 15,
And said plurality of top and bottom heat sources are controlled individually or in a grouped manner. 16. The method of claim 15,
In the step c), the heat treatment includes a drying process and a firing process,
The plurality of upper and lower heat sources are each implemented with near-infrared lamp heaters that emit a peak wavelength of 1.4 μm at full power,
The power of the near-infrared lamp heater is 20-40% of the maximum power in the drying process, 60-80% of the maximum power is used in the firing process.
Substrate heat treatment method. 18. The method of claim 17,
In the case of the drying process, the peak wavelength emitted by the near infrared lamp heater is approximately 2.5 μm,
In the firing process, the peak wavelength emitted from the near infrared lamp heater is 2.0 μm or less.
Substrate heat treatment method. 19. The method according to any one of claims 15 to 18,
In the heat treatment method, when a failure occurs in some chambers of the plurality of chambers during the step c), step c) is performed for the remaining chambers in which the failure does not occur while repairing or replacing only a part of the chambers in which the failure occurs. Substrate heat treatment method performed continuously.
KR1020120074394A 2012-07-09 2012-07-09 Heat treatment chamber and method of substrate using variable wavelength, and heat treatment apparatus of substrate having the same KR20140007523A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150139090A (en) * 2014-06-02 2015-12-11 주식회사 나래나노텍 Improved Heat Treatment Chamber of Substrates and Heat Treatment Apparatus Having the Same
KR20150139382A (en) * 2014-06-03 2015-12-11 주식회사 나래나노텍 Improved Heat Treatment Chamber of Substrates and Heat Treatment Apparatus Having the Same
US10269594B2 (en) 2015-09-11 2019-04-23 Samsung Electronics Co., Ltd. Transparent plate and substrate processing system therewith
WO2022203143A1 (en) * 2021-03-25 2022-09-29 주식회사 나래나노텍 Thin film drying device
WO2022211200A1 (en) * 2021-03-30 2022-10-06 주식회사 나래나노텍 Thin film drying device and thin film manufacturing system comprising same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150139090A (en) * 2014-06-02 2015-12-11 주식회사 나래나노텍 Improved Heat Treatment Chamber of Substrates and Heat Treatment Apparatus Having the Same
KR20150139382A (en) * 2014-06-03 2015-12-11 주식회사 나래나노텍 Improved Heat Treatment Chamber of Substrates and Heat Treatment Apparatus Having the Same
US10269594B2 (en) 2015-09-11 2019-04-23 Samsung Electronics Co., Ltd. Transparent plate and substrate processing system therewith
WO2022203143A1 (en) * 2021-03-25 2022-09-29 주식회사 나래나노텍 Thin film drying device
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