KR20130135320A - 워크피스를 밀링하기 위해 이온빔을 지향시키고 다수회 편향시키고, 그 정도를 결정 및 제어하기 위한 방법 - Google Patents

워크피스를 밀링하기 위해 이온빔을 지향시키고 다수회 편향시키고, 그 정도를 결정 및 제어하기 위한 방법 Download PDF

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Publication number
KR20130135320A
KR20130135320A KR1020137024937A KR20137024937A KR20130135320A KR 20130135320 A KR20130135320 A KR 20130135320A KR 1020137024937 A KR1020137024937 A KR 1020137024937A KR 20137024937 A KR20137024937 A KR 20137024937A KR 20130135320 A KR20130135320 A KR 20130135320A
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KR
South Korea
Prior art keywords
ion beam
workpiece
deflected
directed
directing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020137024937A
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English (en)
Korean (ko)
Inventor
디미트리 보구스라브스키
발렌틴 셰어핀
콜린 스미스
Original Assignee
셀라 세미컨덕터 엔지니어링 라보라토리스 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 셀라 세미컨덕터 엔지니어링 라보라토리스 리미티드 filed Critical 셀라 세미컨덕터 엔지니어링 라보라토리스 리미티드
Publication of KR20130135320A publication Critical patent/KR20130135320A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3114—Machining
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Drying Of Semiconductors (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
KR1020137024937A 2004-08-24 2005-08-24 워크피스를 밀링하기 위해 이온빔을 지향시키고 다수회 편향시키고, 그 정도를 결정 및 제어하기 위한 방법 Ceased KR20130135320A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60354404P 2004-08-24 2004-08-24
US60/603,544 2004-08-24
PCT/IL2005/000913 WO2006021958A2 (en) 2004-08-24 2005-08-24 Directed multi-deflected ion beam milling of a work piece and determining and controlling extent thereof

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127021756A Division KR101355280B1 (ko) 2004-08-24 2005-08-24 워크피스를 밀링하기 위해 이온빔을 지향시키고 다수회 편향시키고, 그 정도를 결정 및 제어하기 위한 방법, 장치 및 시스템

Publications (1)

Publication Number Publication Date
KR20130135320A true KR20130135320A (ko) 2013-12-10

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020137024937A Ceased KR20130135320A (ko) 2004-08-24 2005-08-24 워크피스를 밀링하기 위해 이온빔을 지향시키고 다수회 편향시키고, 그 정도를 결정 및 제어하기 위한 방법
KR1020077006880A Ceased KR20070101204A (ko) 2004-08-24 2005-08-24 워크피스를 밀링하기 위해 이온빔을 가하고 다수회편향시키고, 그 정도를 결정 및 제어하기 위한 방법, 장치및 시스템
KR1020127021756A Expired - Lifetime KR101355280B1 (ko) 2004-08-24 2005-08-24 워크피스를 밀링하기 위해 이온빔을 지향시키고 다수회 편향시키고, 그 정도를 결정 및 제어하기 위한 방법, 장치 및 시스템

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020077006880A Ceased KR20070101204A (ko) 2004-08-24 2005-08-24 워크피스를 밀링하기 위해 이온빔을 가하고 다수회편향시키고, 그 정도를 결정 및 제어하기 위한 방법, 장치및 시스템
KR1020127021756A Expired - Lifetime KR101355280B1 (ko) 2004-08-24 2005-08-24 워크피스를 밀링하기 위해 이온빔을 지향시키고 다수회 편향시키고, 그 정도를 결정 및 제어하기 위한 방법, 장치 및 시스템

Country Status (6)

Country Link
US (2) US20080078750A1 (enExample)
EP (1) EP1787310A2 (enExample)
JP (1) JP5254613B2 (enExample)
KR (3) KR20130135320A (enExample)
CN (1) CN101069260B (enExample)
WO (1) WO2006021958A2 (enExample)

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Also Published As

Publication number Publication date
EP1787310A2 (en) 2007-05-23
JP5254613B2 (ja) 2013-08-07
WO2006021958A3 (en) 2006-05-04
KR20070101204A (ko) 2007-10-16
KR101355280B1 (ko) 2014-01-27
KR20120109641A (ko) 2012-10-08
JP2008511115A (ja) 2008-04-10
CN101069260B (zh) 2012-09-26
CN101069260A (zh) 2007-11-07
US20080078750A1 (en) 2008-04-03
US20130180843A1 (en) 2013-07-18
WO2006021958A2 (en) 2006-03-02

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