KR20130104603A - Semiconductor light emimitting device and method of manufacturing the same - Google Patents

Semiconductor light emimitting device and method of manufacturing the same Download PDF

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KR20130104603A
KR20130104603A KR1020120026227A KR20120026227A KR20130104603A KR 20130104603 A KR20130104603 A KR 20130104603A KR 1020120026227 A KR1020120026227 A KR 1020120026227A KR 20120026227 A KR20120026227 A KR 20120026227A KR 20130104603 A KR20130104603 A KR 20130104603A
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semiconductor
phosphor
light
semiconductor chip
insulating substrate
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KR1020120026227A
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Korean (ko)
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안상정
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안상정
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Priority to KR1020120026227A priority Critical patent/KR20130104603A/en
Priority to PCT/KR2013/002052 priority patent/WO2013137659A1/en
Publication of KR20130104603A publication Critical patent/KR20130104603A/en

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Abstract

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to prevent a second fluorescent substance on the upper surface of a semiconductor chip from being quickly aged due to light. CONSTITUTION: A first fluorescent substance (161) is located on the upper surface of a semiconductor chip (151). An encapsulant (170) includes a second fluorescent substance (162). The encapsulant surrounds the semiconductor chip and the first fluorescent substance. A small amount of light is emitted to the lateral surface of the semiconductor chip via the second fluorescent substance. A large amount of the light is emitted to the upper surface of the semiconductor chip via the first fluorescent substance and the second fluorescent substance.

Description

반도체 발광소자 및 이를 제조하는 방법{SEMICONDUCTOR LIGHT EMIMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME}Semiconductor light emitting device and method for manufacturing same {SEMICONDUCTOR LIGHT EMIMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME}

본 개시(Disclosure)는 전체적으로 반도체 발광소자 및 이를 제조하는 방법에 관한 것으로, 특히 개선된 광 분포를 가지는 반도체 발광소자 및 이를 제조하는 방법에 관한 것이다.The present disclosure relates generally to a semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a semiconductor light emitting device having an improved light distribution and a method of manufacturing the same.

여기서, 반도체 발광소자는 전자와 정공의 재결합을 통해 빛을 생성하는 반도체 광소자를 의미하며, 3족 질화물 반도체 발광소자를 예로 들 수 있다. 3족 질화물 반도체는 Al(x)Ga(y)In(1-x-y)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1)로 된 화합물로 이루어진다. 이외에도 적색 발광에 사용되는 GaAs계 반도체 발광소자 등을 예로들 수 있다.Here, the semiconductor light emitting element means a semiconductor light emitting element that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting element. The Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y? In addition, a GaAs-based semiconductor light emitting device used for red light emission may be mentioned.

여기서는, 본 개시에 관한 배경기술이 제공되며, 이들이 반드시 공지기술을 의미하는 것은 아니다(This section provides background information related to the present disclosure which is not necessarily prior art).Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

도 1은 종래의 반도체 발광소자의 일 예를 나타내는 도면으로서, 반도체 발광소자는 리드 프레임(110,120), 몰드(130), 그리고 캐비티(140) 내에 수직형 발광 칩(150; Vertical Type Light-emitting Chip)이 구비되어 있고, 캐비티(140)는 형광체(160)를 함유하는 봉지제(170)로 채워져 있다. 수직형 발광 칩(150)의 하면이 리드 프레임(110)에 전기적으로 연결되고, 상면이 와이어(180)에 의해 리드 프레임(120)에 전기적으로 연결되어 있다. 수직형 발광 칩(150)에서 나온 광(예: 청색광)의 일부가 형광체(160)를 여기시켜 형광체(160)가 광(예: 황색광)을 만들고, 이 광들(청색광+황색광)이 백색광을 만든다.1 is a view illustrating an example of a conventional semiconductor light emitting device, wherein the semiconductor light emitting device includes a vertical type light emitting chip 150 in the lead frames 110 and 120, the mold 130, and the cavity 140. ) Is provided, and the cavity 140 is filled with an encapsulant 170 containing the phosphor 160. A lower surface of the vertical light emitting chip 150 is electrically connected to the lead frame 110, and an upper surface of the vertical light emitting chip 150 is electrically connected to the lead frame 120 by a wire 180. Some of the light emitted from the vertical light emitting chip 150 (eg, blue light) excites the phosphor 160 so that the phosphor 160 produces light (eg yellow light), and these lights (blue light + yellow light) are white light. Make

도 2는 종래의 반도체 발광소자의 다른 예를 나타내는 도면으로서, 반도체 발광소자는 리드 프레임(110,120), 몰드(130), 그리고 캐비티(140) 내에 래터럴 타입 발광 칩(151; Lateral Type Light-emitting Chip)이 구비되어 있다. 미도시되었지만, 도 1에 도시된 반도체 발광소자와 마찬가지로 캐비티(140)에 형광체(160)를 구비함으로써, 요구되는 색을 발광할 수 있게 된다.FIG. 2 is a diagram illustrating another example of a conventional semiconductor light emitting device, wherein the semiconductor light emitting device includes a lateral type light emitting chip 151 in the lead frames 110 and 120, the mold 130, and the cavity 140. ) Is provided. Although not shown, similarly to the semiconductor light emitting device illustrated in FIG. 1, since the phosphor 160 is provided in the cavity 140, the required color may be emitted.

사파이어 기판을 사용하는 3족 질화물 반도체 발광 칩을 예로 할 때, 도 1에 도시된 수직형 반도체 칩(150)과 도 2에 도시된 래터럴 타입 발광 칩(151)의 차이는 투광성 사파이어 기판(152)의 유무이다. 즉, 수직형 반도체 칩(150)의 경우에, 사파이어 기판(152)이 제거된 형태를 가진다. 수직형 반도체 칩(150)은 사파이어 기판(152)이 제거됨으로써, 소자 내 전류 확산이 원활해지고, 사파이어 기판(152)에 의한 광 갇힘 등이 해소되어, 래터럴 타입 발광 칩(152)에 비해 우수한 광 효율을 보인다. 그러나 이들이 캐비티(140)에 배치되고, 그 위에 형광체(160)가 도입된 상태에서, 봉지제(140) 밖으로 나온 광량을 측정하면 사정이 달라진다. 수직형 반도체 칩(150)에 있어서, 사파이어 기판(152)이 제거된 반도체층의 총 두께는 10um를 넘지 못하며, 따라서 대부분의 광은 수직형 반도체 칩(150)의 상부를 통해 봉지제(140) 밖으로 나온다. 이것은 캐비티(140) 내에서 수직형 반도체 칩(150)의 측면에 위치하는 형광체(160)가 거의 역할을 하지 못한다는 것을 의미한다. 반면에서, 래터럴 타입 반도체 칩(151)에 있어서, 사파이어 기판(152)이 대략 80um~150um의 두께를 가지므로, 래터럴 타입 반도체 칩(151)의 측면을 통해 많은 광이 나오고, 이 광에 의해 래터럴 타입 반도체 칩(150)의 측면에 위치하는 형광체(160)가 활용될 수 있고, 이것이 총 광량의 증가를 가져오는 한편, 봉지제(140) 전체에 걸쳐 밖으로 나오는 광의 분포를 개선시킨다.Taking a group III nitride semiconductor light emitting chip using a sapphire substrate as an example, the difference between the vertical semiconductor chip 150 shown in FIG. 1 and the lateral type light emitting chip 151 shown in FIG. 2 is the light transmissive sapphire substrate 152. Is there. That is, in the case of the vertical semiconductor chip 150, the sapphire substrate 152 is removed. As the vertical semiconductor chip 150 is removed from the sapphire substrate 152, current spreading in the device is smoothed, and light trapping by the sapphire substrate 152 is eliminated, so that the light of the vertical semiconductor chip 150 is superior to the lateral type light emitting chip 152. Shows efficiency. However, when they are disposed in the cavity 140 and the phosphor 160 is introduced thereon, the amount of light exiting the encapsulant 140 is changed. In the vertical semiconductor chip 150, the total thickness of the semiconductor layer from which the sapphire substrate 152 has been removed does not exceed 10 μm, so that most of the light is encapsulated through the top of the vertical semiconductor chip 150. Comes out This means that the phosphor 160 positioned on the side of the vertical semiconductor chip 150 in the cavity 140 plays little role. On the other hand, in the lateral type semiconductor chip 151, since the sapphire substrate 152 has a thickness of approximately 80 μm to 150 μm, a lot of light is emitted through the side surface of the lateral type semiconductor chip 151, and this light causes lateral The phosphor 160 located on the side of the type semiconductor chip 150 can be utilized, which leads to an increase in the total amount of light, while improving the distribution of light exiting out throughout the encapsulant 140.

이것이 의미하는 것, 즉 칩 레벨에서 광량이 많은데도, 패키지 레벨에서 광량이 많지 않을 수 있다는 것은 칩과 패키지의 구체적 조합이 그렇게 단순하지 않다는 것을 의미하며, 반도체 발광소자의 설계가 구체적인 칩의 상황과 패키지의 형태에 따라 세밀하게 그리고 많은 노력의 결과로써 도출된다는 것을 의미한다.This means that even though there is a large amount of light at the chip level, but not a lot of light at the package level, it means that the specific combination of chip and package is not so simple, and the design of the semiconductor light emitting device is a specific chip situation and package This means that it is derived in detail and as a result of much effort.

이에 대하여 '발명의 실시를 위한 구체적인 내용'의 후단에 기술한다.This will be described later in the Specification for Implementation of the Invention.

여기서는, 본 개시의 전체적인 요약(Summary)이 제공되며, 이것이 본 개시의 외연을 제한하는 것으로 이해되어서는 아니된다(This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all of its features).SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

본 개시에 따른 일 태양에 의하면(According to one aspect of the present disclosure), 반도체 발광소자에 있어서, 반도체 칩; 상기 반도체 칩은: 투광성 절연 기판; 투광성 절연 기판 위에 순차로 형성된 복수의 반도체층;으로서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층, 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 투광성 절연 기판의 반대 측에서 복수의 반도체층에 전류를 공급하도록 제1 반도체층과 전기적으로 연결된 제1 전극; 투광성 절연 기판의 반대 측에서 복수의 반도체층에 전류를 공급하도록 제2 반도체층과 전기적으로 연결된 제2 전극; 및 상기 반도체 칩의 측방으로의 광 방출양보다 상기 반도체 칩의 상방으로의 광 방출양이 많게 하는 구조물;을 포함하고, 반도체 칩의 상면에 놓이는 제1 형광체; 그리고, 제2 형광체를 함유하는 봉지제;로서, 반도체 칩과 제1 형광체를 둘러싸는 봉지제;를 포함하며, 상기 반도체 칩의 측방으로 방출된 상대적으로 작은 양의 광은 제2 형광체를 거쳐 방출되고, 상기 반도체 칩의 상방으로 방출되는 상대적으로 많은 양의 광은 제1 형광체 및 제2 형광체를 거쳐 방출되는 것을 특징으로 하는 반도체 발광소자가 제공된다.According to one aspect of the disclosure, a semiconductor light emitting device includes: a semiconductor chip; The semiconductor chip comprises: a translucent insulating substrate; A plurality of semiconductor layers sequentially formed on the light-transmissive insulating substrate, the first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and between the first semiconductor layer and the second semiconductor layer. A plurality of semiconductor layers interposed and having an active layer generating light through recombination of electrons and holes; A first electrode electrically connected with the first semiconductor layer to supply current to the plurality of semiconductor layers on the opposite side of the translucent insulating substrate; A second electrode electrically connected with the second semiconductor layer to supply current to the plurality of semiconductor layers on the opposite side of the translucent insulating substrate; And a structure in which the amount of light emitted upwards of the semiconductor chip is greater than the amount of emitted light toward the side of the semiconductor chip; and a first phosphor disposed on an upper surface of the semiconductor chip; And an encapsulant containing a second phosphor; an encapsulant surrounding the semiconductor chip and the first phosphor; wherein a relatively small amount of light emitted to the side of the semiconductor chip is emitted through the second phosphor. The semiconductor light emitting device is characterized in that a relatively large amount of light emitted upward of the semiconductor chip is emitted through the first phosphor and the second phosphor.

본 개시에 따른 다른 태양에 의하면(According to another aspect of the present disclosure), 반도체 발광소자를 제조하는 방법에 있어서, 투광성 절연 기판; 투광성 절연 기판 위에 순차로 형성된 복수의 반도체층;으로서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층, 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 투광성 절연 기판의 반대 측에서 복수의 반도체층에 전류를 공급하도록 제1 반도체층과 전기적으로 연결된 제1 전극; 투광성 절연 기판의 반대 측에서 복수의 반도체층에 전류를 공급하도록 제2 반도체층과 전기적으로 연결된 제2 전극; 및 상기 반도체 칩의 측방으로의 광 방출양보다 상기 반도체 칩의 상방으로의 광 방출양이 많게 하는 구조물;을 포함하는 반도체 칩을 준비하는 단계; 그리고, 반도체 칩의 상면에 제1 형광체를 놓이게 하고, 제2 형광체를 함유하는 봉지제로 반도체 칩과 제1 형광체를 덮어, 구조물의 도입에 의해 반도체 칩의 상방으로 증가되어 방출되는 광이 제1 형광체와 제2 형광체를 통과하도록 하여 봉지제 밖으로 나오는 광의 분포를 균일하게 하는 단계;를 포함하는 것을 특징으로 하는 반도체 발광소자를 제조하는 방법을 제공한다.According to another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, the method comprising: a translucent insulating substrate; A plurality of semiconductor layers sequentially formed on the light-transmissive insulating substrate, the first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and between the first semiconductor layer and the second semiconductor layer. A plurality of semiconductor layers interposed and having an active layer generating light through recombination of electrons and holes; A first electrode electrically connected with the first semiconductor layer to supply current to the plurality of semiconductor layers on the opposite side of the translucent insulating substrate; A second electrode electrically connected with the second semiconductor layer to supply current to the plurality of semiconductor layers on the opposite side of the translucent insulating substrate; Preparing a semiconductor chip comprising a; and a structure to make the amount of light emitted upward of the semiconductor chip than the amount of light emitted toward the side of the semiconductor chip; Then, the first phosphor is placed on the upper surface of the semiconductor chip, the encapsulant containing the second phosphor is covered with the semiconductor chip and the first phosphor, and the light that is increased and emitted above the semiconductor chip by the introduction of the structure is emitted to the first phosphor. And passing through the second phosphor to uniformize the distribution of light exiting the encapsulant; and providing a method of manufacturing a semiconductor light emitting device, the method comprising:

이에 대하여 '발명의 실시를 위한 구체적인 내용'의 후단에 기술한다.This will be described later in the Specification for Implementation of the Invention.

도 1은 종래의 반도체 발광소자의 일 예를 나타내는 도면,
도 2는 종래의 반도체 발광소자의 다른 예를 나타내는 도면,
도 3은 래터럴 타입 칩이 놓인 캐비티 상황의 일 예를 나타내는 도면,
도 4는 래터럴 타입 칩이 놓인 캐비티 상황의 다른 예를 나타내는 도면,
도 5는 래터럴 타입 칩의 상방으로 광 방출을 증가시키는 구조물의 예들을 나타내는 도면,
도 6은 본 개시에 따른 래터럴 타입 반도체 칩의 일 예를 나타내는 도면,
도 7은 본 개시에 따른 반도체 발광소자 및 이를 제조하는 방법의 일 예를 설명하는 도면.1 is a view showing an example of a conventional semiconductor light emitting device;
2 is a view showing another example of a conventional semiconductor light emitting device;
3 is a view illustrating an example of a cavity situation in which a lateral type chip is placed;
4 is a view showing another example of a cavity situation in which a lateral type chip is placed;
5 shows examples of structures that increase light emission above a lateral type chip;
6 is a diagram illustrating an example of a lateral type semiconductor chip according to the present disclosure;
7 is a view for explaining an example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure.

이하, 본 개시를 첨부된 도면을 참고로 하여 자세하게 설명한다(The present disclosure will now be described in detail with reference to the accompanying drawing(s)). The present disclosure will now be described in detail with reference to the accompanying drawing (s).

도 3은 래터럴 타입 칩이 놓인 캐비티 상황의 일 예를 나타내는 도면으로서, 캐티비(140) 내에 기판(152)을 구비한 래터럴 타입 반도체 칩(151)이 놓여 있다. 이 경우에, 래터럴 타입 반도체 칩(151)의 측방으로 방출되는 광량은 상방으로 방출되는 광량보다 많거나 비슷하다.3 is a diagram illustrating an example of a cavity situation in which a lateral type chip is placed, and a lateral type semiconductor chip 151 having a substrate 152 is placed in the cavity 140. In this case, the amount of light emitted laterally of the lateral type semiconductor chip 151 is more or similar to the amount of light emitted upward.

도 4는 래터럴 타입 칩이 놓인 캐비티 상황의 다른 예를 나타내는 도면으로서, 도 3과 달리, 래터럴 타입 반도체 칩(151) 아래에, 상방으로 빛을 반사시키는 구조물로서, SiO2 및/또는 TiO2로 된 단일 또는 복합 반사막(153; 예: DBR(Distributed Bragg Reflector))과 금속 반사막(154)이 구비되어 있다. 이 경우에, 래터럴 타입 반도체 칩(151)의 상방으로 방출되는 광량은 총 방출 광량의 60%이상을 차지하게 된다. 따라서 이런 형태, 즉 래터럴 타입 반도체 칩(151)의 상방으로 방출되는 광량을 증가시키는 구조물이 도입되거나, 상방으로 방출되는 광량이 측방으로 방출되는 광량을 초과하게 되면, 형광체(미도시)가 캐비티(140) 내에 균일하게 분포된 것을 가정할 때, 캐비티(140) 밖으로 나오는 광의 분포가 불균일해지는 문제점을 야기한다.FIG. 4 is a view illustrating another example of a cavity situation in which a lateral type chip is placed. Unlike FIG. 3, a structure reflecting light upwards under the lateral type semiconductor chip 151 is formed of SiO 2 and / or TiO 2 . A single or composite reflective film 153 (eg, a distributed bragg reflector (DBR)) and a metal reflective film 154 are provided. In this case, the amount of light emitted upward of the lateral type semiconductor chip 151 occupies 60% or more of the total amount of emitted light. Therefore, when a structure that increases the amount of light emitted upward of the lateral type semiconductor chip 151 is introduced, or the amount of light emitted upward exceeds the amount of light emitted laterally, the phosphor (not shown) becomes a cavity (not shown). Assuming a uniform distribution within 140, causes a problem that the distribution of light exiting cavity 140 becomes uneven.

도 5는 래터럴 타입 칩의 상방으로 광 방출을 증가시키는 구조물의 예들을 나타내는 도면으로서, 래터럴 타입 반도체 칩(151)은 사파이어 기판(152)과 반도체층의 계면에서 거친 표면(155)을 가질 수 있으며, 반도체층 내부에 거친 표면(156)을 가질 수 있고, 반도체 칩(151) 상면에 거친 표면(157)을 가질 수 있다. 거친 표면(155)은 반도체층의 성장에 앞서, 사파이어 기판(152)을 식각하여 만들 수 있으며, 거친 표면(156)은 반도체층의 성장 조건을 조정하거나, 식각을 통해 만들 수 있고, 거친 표면(157)은 후술할 투광성 전도막(예: ITO)을 식각하여 만들 수 있다. 거친 표면(155,156,157)은 빛을 스캐터링하여 칩 상부로 광 방출을 증가시킨다. 반사막(153), 금속 반사막(154), 거친 표면(155), 거친 표면(156) 및 거친 표면(157)은 하나 또는 복수로 래터럴 타입 반도체 칩(151)에 적용될 수 있다. 칩 상부로의 광 방출을 증가시키는 구조물이라면 어떤 구조물이라도 본 개시에 따른 반도체 발광소자에 적용될 수 있다.FIG. 5 is a diagram illustrating examples of a structure for increasing light emission upward of a lateral type chip. The lateral type semiconductor chip 151 may have a rough surface 155 at an interface between the sapphire substrate 152 and the semiconductor layer. The semiconductor device may have a rough surface 156 in the semiconductor layer and a rough surface 157 on the upper surface of the semiconductor chip 151. The rough surface 155 may be made by etching the sapphire substrate 152 prior to the growth of the semiconductor layer, and the rough surface 156 may be made by adjusting or etching the growth conditions of the semiconductor layer. 157 may be formed by etching a transmissive conductive film (eg, ITO) to be described later. Rough surfaces 155, 156 and 157 scatter light to increase light emission over the chip. The reflective film 153, the metal reflective film 154, the rough surface 155, the rough surface 156, and the rough surface 157 may be applied to the lateral type semiconductor chip 151 in one or a plurality. Any structure can be applied to the semiconductor light emitting device according to the present disclosure as long as the structure increases the light emission to the upper portion of the chip.

도 6은 본 개시에 따른 래터럴 타입 반도체 칩의 일 예를 나타내는 도면으로서, 래터럴 타입 반도체 칩은 기판(152; 예: 사파이어 기판), 기판(152) 위에, 버퍼층(200; 생략 가능), 제1 도전성을 가지는 제1 반도체층(300; 예: n형 GaN), 전자와 정공의 재결합을 통해 빛을 생성하는 활성층(400; 예: InGaN/(In)GaN 다중양자우물 구조), 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층(500; 예: p형 GaN)이 순차로 증착되어 있으며, 그 위에 전류 확산을 위한 투광성 전도막(600; 예: ITO)과, 본딩 패드로 역할하는 전극(700)이 형성되어 있고, 식각되어 노출된 제1 반도체층(300) 위에 본딩 패드로 역할하는 전극(800)이 형성되어 있다. 본 개시에 있어서, 래터럴 타입 반도체 칩은 반도체층(300,400,400)의 성장에 사용되는 투광성 절연 기판(예: 사파이어 기판)을 구비하고, 전극(700)과 전극(800)에 의해 반도체 칩의 상면 측에서 반도체 칩으로 전류가 공급되는 구조의 반도체 칩을 말한다. 투광성 전도막(600)은 일반적으로 구비되지만, 필수적인 것은 아니다.6 is a diagram illustrating an example of a lateral type semiconductor chip according to the present disclosure, in which a lateral type semiconductor chip includes a substrate 152 (eg, a sapphire substrate), a substrate 152, a buffer layer 200 (can be omitted), and a first A first semiconductor layer 300 having conductivity (eg n-type GaN), an active layer 400 generating light through recombination of electrons and holes (eg InGaN / (In) GaN multi-quantum well structure), and a first conductivity A second semiconductor layer 500 (eg, p-type GaN) having another second conductivity is sequentially deposited, and thereon, a transparent conductive film 600 (eg, ITO) for diffusion of current and an electrode serving as a bonding pad thereon. A 700 is formed, and an electrode 800 serving as a bonding pad is formed on the etched and exposed first semiconductor layer 300. In the present disclosure, the lateral type semiconductor chip includes a translucent insulating substrate (eg, a sapphire substrate) used for growth of the semiconductor layers 300, 400, and 400, and is formed on the upper surface side of the semiconductor chip by the electrodes 700 and the electrodes 800. The semiconductor chip has a structure in which a current is supplied to the semiconductor chip. The transparent conductive film 600 is generally provided, but is not essential.

도 7은 본 개시에 따른 반도체 발광소자 및 이를 제조하는 방법의 일 예를 설명하는 도면으로서, 반도체 발광소자는 래터럴 타입 반도체 칩(151), 반도체 칩(151)의 상면(U)에 놓인 제1 형광체(161), 반도체 칩(151)의 측면(L) 또는 측방으로의 광(LL) 방출양보다 반도체 칩(151)의 상면(U) 또는 상방으로의 광(UL) 방출양이 많게 하는 구조물로서, 반사막(153)과 반사막(154) 그리고, 반도체 칩(151)과 제1 형광체(161)를 둘러싸며, 제2 형광체(162)를 함유하는 봉지제(170)를 구비한다. 반도체 칩(151)의 측방으로 방출된 상대적으로 작은 양의 광(LL)은 제2 형광체(162)를 거쳐 방출되고, 반도체 칩(151)의 상방으로 방출되는 상대적으로 많은 양의 광(UL)은 제1 형광체(161) 및 제2 형광체(162)를 거쳐 방출된다. 이러한 구성을 통해 반도체 발광소자 전체로서 균일한 광 분포를 가질 수 있게 된다. 구조물은 반사막(153)과 반사막(154)에 제한되지 않으며, 도 5와 관련하여 설명된 바와 같이, 하나 또는 복수의 구조물이 적용될 수 있다. 제1 형광체(161)와 제2 형광체(162)는 동일 또는 다른 물질일 수 있다. 제1 형광체(161)의 광 경로에 대한 분포 밀도와 제2 형광체(162)의 광 경로에 대한 분포 밀도는 동일 또는 다를 수 있다. 제1 형광체(161)는 렌즈(lens) 형상을 갖도록 하는 도팅(dotting), 균일한 두께를 갖는 컨포멀 코팅(conformal coating) 등의 방법으로 형성될 수 있다.7 is a view illustrating an example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure. The semiconductor light emitting device includes a lateral type semiconductor chip 151 and a first surface disposed on an upper surface U of the semiconductor chip 151. It is a structure in which the amount of light (UL) emitted toward the upper surface (U) or upward of the semiconductor chip 151 is larger than the amount of light (LL) emitted to the side surface L or the side of the phosphor 161 and the semiconductor chip 151. The reflective film 153, the reflective film 154, and the encapsulant 170 surrounding the semiconductor chip 151 and the first phosphor 161 and containing the second phosphor 162 are provided. A relatively small amount of light LL emitted to the side of the semiconductor chip 151 is emitted through the second phosphor 162 and a relatively large amount of light UL is emitted above the semiconductor chip 151. Is emitted through the first phosphor 161 and the second phosphor 162. Through such a configuration, it is possible to have a uniform light distribution as a whole semiconductor light emitting device. The structure is not limited to the reflective film 153 and the reflective film 154, and as described with reference to FIG. 5, one or more structures may be applied. The first phosphor 161 and the second phosphor 162 may be the same or different materials. The distribution density of the optical path of the first phosphor 161 and the distribution density of the optical path of the second phosphor 162 may be the same or different. The first phosphor 161 may be formed by a method such as dotting to have a lens shape, a conformal coating having a uniform thickness, or the like.

봉지제(170)는 투명 에폭시가 이용되며, 제2 형광체(162)를 혼합한 다음, 디스펜서를 이용해 반도체 칩(151)과 제1 형광체(161)를 둘러싸게 된다. 제2 형광체(162)는 봉지제(170)에 전체 균일하게 배치되어도 좋고, 적절한 조건의 큐어링을 거쳐 가라앉은 형태여도 좋다.As the encapsulant 170, a transparent epoxy is used, the second phosphor 162 is mixed, and then the semiconductor chip 151 and the first phosphor 161 are surrounded by a dispenser. The second fluorescent substance 162 may be disposed uniformly on the encapsulant 170, or may be in a form that has been sunk through curing under appropriate conditions.

이하 본 개시의 다양한 실시 형태에 대하여 설명한다.Various embodiments of the present disclosure will be described below.

(1) 구조물은 투광성 절연 기판에 구비된 반사막, 투광성 절연 기판에 구비된 거친 표면, 복수의 반도체층 내에 구비된 거친 표면 및 복수의 반도체층 위에 구비된 거친 표면 중의 적어도 하나를 포함하는 것을 특징으로 하는 반도체 발광소자. 복수 개가 구비되는 경우에, 본 개시에 따른 반도체 발광소자의 효과는 더욱 커진다.(1) The structure includes at least one of a reflective film provided on the transparent insulating substrate, a rough surface provided on the transparent insulating substrate, a rough surface provided in the plurality of semiconductor layers, and a rough surface provided on the plurality of semiconductor layers. A semiconductor light emitting device. When a plurality is provided, the effect of the semiconductor light emitting device according to the present disclosure is further increased.

(2) 제1 형광체와 제2 형광체가 다른 것을 특징으로 하는 반도체 발광소자.(2) A semiconductor light emitting element, wherein the first phosphor and the second phosphor are different.

(3) 많은 광에 노출되는 제1 형광체에 상대적으로 열적 안정성이 우수한 형광체를 사용하는 것을 특징으로 하는 반도체 발광소자. 예를 들어, 제1 형광체로 YAG를 사용하고, 제2 형광체로 Silicate계열의 형광체를 사용할 수 있다.(3) A semiconductor light emitting element comprising a phosphor having excellent thermal stability relative to a first phosphor exposed to a lot of light. For example, YAG may be used as the first phosphor and Silicate-based phosphor may be used as the second phosphor.

(4) 반도체 칩의 상방에서 제2 형광체는 제1 형광체를 거친 광에 여기되므로, 제2 형광체로 제1 형광체보다 상대적으로 낮은 에너지 및/또는 긴 파장에서 효과적으로 발광할 수 있는 물질을 사용하는 것을 특징으로 하는 반도체 발광소자. 이는 제1 형광체와 제2 형광체가 같은 색의 여기된 광을 만드는 경우에도 적용될 수 있고, 제1 형광체가 짧은 파장 색(예: 황색)의 여기된 광을 만들고, 제2 형광체가 긴 파장 색(예: 적색)의 여기된 광을 만드는 경우에도 적용이 된다.(4) Since the second phosphor is excited to the light passing through the first phosphor above the semiconductor chip, it is preferable to use a material capable of emitting light efficiently at a lower energy and / or longer wavelength than the first phosphor as the second phosphor. A semiconductor light emitting device characterized in that. This can also be applied when the first phosphor and the second phosphor produce excited light of the same color, the first phosphor produces excited light of a short wavelength color (e.g. yellow), and the second phosphor has a long wavelength color ( Example: This also applies to making excited light of red color).

(5) 제2 형광체는 긴 파장의 광에 대해 제1 형광체보다 상대적으로 잘 여기되는 형광체인 것을 특징으로 하는 반도체 발광소자. 물론 이와 반대로 배치하는 것도 가능하다. 열적 안정성, 형광체의 발광 파장, 여기에 적합한 발광소자 칩의 파장 등을 종합적으로 고려해서 배치를 고려할 수 있다. 예를 들어, 제1 형광체로 황색 빛(상대적으로 단파장의 빛을 많이 포함)을 방출하는 형광체 (YAG, TAG, Nitride, Silicate, etc; 열적으로 상대적으로 우수함)를 사용하고, 제2 형광체로 적색 또는 녹색 빛(상대적으로 장파장의 빛을 많이 포함)을 방출하는 형광체(Oxynitride, ZnS)를 사용할 수 있다.(5) A semiconductor light emitting element, wherein the second phosphor is a phosphor that is excited relatively well to the first phosphor for a long wavelength of light. Of course, it is also possible to arrange them in reverse. The arrangement may be considered in consideration of the thermal stability, the light emission wavelength of the phosphor, the wavelength of the light emitting device chip suitable for this, and the like. For example, use a phosphor (YAG, TAG, Nitride, Silicate, etc; relatively thermally excellent) that emits yellow light (containing a relatively large amount of short wavelength light) as the first phosphor, and red as the second phosphor. Alternatively, phosphors (Oxynitride, ZnS) that emit green light (relatively containing a lot of long wavelengths) can be used.

(6) 기판에 구비된 반사막이 투광성 산화물(예: SiO2, TiO2)의 단일막, 복합막, DBR(Distributed Bragg Reflector) 또는 이들의 조합으로 구성되는 것을 특징으로 하는 반도체 발광소자.(6) A semiconductor light emitting device, characterized in that the reflective film provided on the substrate is composed of a single layer of a light transmitting oxide (for example, SiO 2 , TiO 2 ), a composite film, a distributed bragg reflector (DBR), or a combination thereof.

(7) 반도체 발광소자를 제조하는 방법에 있어서, 투광성 절연 기판; 투광성 절연 기판 위에 순차로 형성된 복수의 반도체층;으로서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층, 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 투광성 절연 기판의 반대 측에서 복수의 반도체층에 전류를 공급하도록 제1 반도체층과 전기적으로 연결된 제1 전극; 투광성 절연 기판의 반대 측에서 복수의 반도체층에 전류를 공급하도록 제2 반도체층과 전기적으로 연결된 제2 전극; 및 상기 반도체 칩의 측방으로의 광 방출양보다 상기 반도체 칩의 상방으로의 광 방출양이 많게 하는 구조물;을 포함하는 반도체 칩을 준비하는 단계; 그리고, 반도체 칩의 상면에 제1 형광체를 놓이게 하고, 제2 형광체를 함유하는 봉지제로 반도체 칩과 제1 형광체를 덮어, 구조물의 도입에 의해 반도체 칩의 상방으로 증가되어 방출되는 광이 제1 형광체와 제2 형광체를 통과하도록 하여 봉지제 밖으로 나오는 광의 분포를 균일하게 하는 단계;를 포함하는 것을 특징으로 하는 반도체 발광소자를 제조하는 방법. 여기서 광의 분포를 균일하게 한다는 것은 제1 형광체가 없는 경우에 발생하는 문제점, 즉 (1) 반도체 칩의 상방에 있어서, 반도체 칩으로부터 광 중 제2 형광체를 여기시키지 않고 반도체 발광소자 밖으로 나오는 광이 지나치게 많아지는 점, (2) 반도체 칩의 측방에 있어서, 제2 형광체를 여기시키는 반도체 칩으로부터 광이 부족한 점을 개선한다는 것을 의미한다. 또한 많은 광에 의해 반도체 칩의 상부에 위치하는 제2 형광체가 빨리 노화되는 것을 방지할 수 있게 된다.(7) A method of manufacturing a semiconductor light emitting device, comprising: a light transmissive insulating substrate; A plurality of semiconductor layers sequentially formed on the light-transmissive insulating substrate, the first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and between the first semiconductor layer and the second semiconductor layer. A plurality of semiconductor layers interposed and having an active layer generating light through recombination of electrons and holes; A first electrode electrically connected with the first semiconductor layer to supply current to the plurality of semiconductor layers on the opposite side of the translucent insulating substrate; A second electrode electrically connected with the second semiconductor layer to supply current to the plurality of semiconductor layers on the opposite side of the translucent insulating substrate; Preparing a semiconductor chip comprising a; and a structure to make the amount of light emitted upward of the semiconductor chip than the amount of light emitted toward the side of the semiconductor chip; Then, the first phosphor is placed on the upper surface of the semiconductor chip, the encapsulant containing the second phosphor is covered with the semiconductor chip and the first phosphor, and the light that is increased and emitted above the semiconductor chip by the introduction of the structure is emitted to the first phosphor. And uniformizing the distribution of light exiting the encapsulant by passing through the second phosphor. The uniform distribution of light here is a problem that occurs when there is no first phosphor, that is, (1) above the semiconductor chip, the light exiting the semiconductor light emitting element from the semiconductor chip without excitation of the second phosphor from the semiconductor chip is excessive. It means that the point which increases in number and (2) the lack of light from the semiconductor chip which excites a 2nd fluorescent substance in the side of a semiconductor chip is improved. In addition, it is possible to prevent the second phosphor located on the top of the semiconductor chip from aging quickly due to a lot of light.

(8) 반도체 칩의 상방으로 상대적으로 많은 광을 방출시키는 구조물로서, 래터럴 타입 반도체 칩이 플립 칩으로 구성되는 경우를 생각해 볼 수 있다. 이는 투광성 전도막(600; 도 6 참조) 상면에 금속 반사막(이것이 제2 전극으로 역할)을 구비하여, 투광성 절연 기판(152) 측을 광을 방출하는 반도체 칩을 말한다. 이 경우에, 이 금속 반사막이 구조물로 기능하며, 기판 측이 반도체 칩이 상방이 된다.(8) As a structure that emits a relatively large amount of light upward of the semiconductor chip, a case may be considered in which a lateral type semiconductor chip is composed of a flip chip. This refers to a semiconductor chip having a metal reflective film (which serves as a second electrode) on an upper surface of the transparent conductive film 600 (see FIG. 6) to emit light toward the transparent insulating substrate 152. In this case, this metal reflecting film functions as a structure, and the semiconductor chip is upward on the substrate side.

본 개시에 따른 하나의 반도체 발광소자 및 이를 제조하는 방법에 의하면, 소자 외부로 나오는 광의 분포를 개선할 수 있게 된다.According to one semiconductor light emitting device and a method of manufacturing the same according to the present disclosure, it is possible to improve the distribution of light emitted to the outside of the device.

수직형 반도체 칩을 구비하는 반도체 발광소자에 이러한 구조를 적용하는 경우에, 캐티비 내에서 수직형 반도체 칩의 측방에 위치하는 형광체를 활용할 수 없는 문제점을 여전히 가지게 된다. 따라서 본 개시에 반도체 발광소자 및 이를 제조하는 방법은 캐비티 내에서 반도체 칩의 측방에 위치하는 형광체를 활용하면서도 전체적으로 광 분포를 개선하는 것에 관한 것이다. 또한 래터럴 타입 반도체 칩을 이용하는 경우에라도, 반도체 칩의 상방으로 상대적으로 일정 이상의 광이 더 많이 방출되지 않는 경우에, 본 개시에 따른 제1 형광체가 적용된다면, 제1 형광체가 없는 경우보다 광 분포가 개선되는 효과를 가지지 못한다는 점을 당업자는 염두에 두어야 한다.When such a structure is applied to a semiconductor light emitting device having a vertical semiconductor chip, there is still a problem that phosphors located on the side of the vertical semiconductor chip cannot be utilized in the catby. Accordingly, the semiconductor light emitting device and the method of manufacturing the same in the present disclosure relate to improving the light distribution as a whole while utilizing the phosphor located on the side of the semiconductor chip in the cavity. In addition, even in the case of using a lateral type semiconductor chip, if more than a predetermined amount of light is not emitted above the semiconductor chip, if the first phosphor according to the present disclosure is applied, the light distribution is less than that without the first phosphor. Those skilled in the art should bear in mind that they do not have an improved effect.

130: 몰드 140: 캐비티 160: 형광체130: mold 140: cavity 160: phosphor

Claims (10)

반도체 발광소자에 있어서,
반도체 칩; 상기 반도체 칩은:
투광성 절연 기판;
투광성 절연 기판 위에 순차로 형성된 복수의 반도체층;으로서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층, 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층;
투광성 절연 기판의 반대 측에서 복수의 반도체층에 전류를 공급하도록 제1 반도체층과 전기적으로 연결된 제1 전극;
투광성 절연 기판의 반대 측에서 복수의 반도체층에 전류를 공급하도록 제2 반도체층과 전기적으로 연결된 제2 전극; 및
상기 반도체 칩의 측방으로의 광 방출양보다 상기 반도체 칩의 상방으로의 광 방출양이 많게 하는 구조물;을 포함하고,
반도체 칩의 상면에 놓이는 제1 형광체; 그리고,
제2 형광체를 함유하는 봉지제;로서, 반도체 칩과 제1 형광체를 둘러싸는 봉지제;를 포함하며,
상기 반도체 칩의 측방으로 방출된 상대적으로 작은 양의 광은 제2 형광체를 거쳐 방출되고, 상기 반도체 칩의 상방으로 방출되는 상대적으로 많은 양의 광은 제1 형광체 및 제2 형광체를 거쳐 방출되는 것을 특징으로 하는 반도체 발광소자.In the semiconductor light emitting device,
A semiconductor chip; The semiconductor chip is:
A translucent insulating substrate;
A plurality of semiconductor layers sequentially formed on the light-transmissive insulating substrate, the first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and between the first semiconductor layer and the second semiconductor layer. A plurality of semiconductor layers interposed and having an active layer generating light through recombination of electrons and holes;
A first electrode electrically connected with the first semiconductor layer to supply current to the plurality of semiconductor layers on the opposite side of the translucent insulating substrate;
A second electrode electrically connected with the second semiconductor layer to supply current to the plurality of semiconductor layers on the opposite side of the translucent insulating substrate; And
And a structure that increases the amount of light emitted upward of the semiconductor chip rather than the amount of emitted light toward the side of the semiconductor chip.
A first phosphor disposed on an upper surface of the semiconductor chip; And,
An encapsulant containing a second phosphor; an encapsulant surrounding the semiconductor chip and the first phosphor;
The relatively small amount of light emitted to the side of the semiconductor chip is emitted through the second phosphor, and the relatively large amount of light emitted to the upper side of the semiconductor chip is emitted through the first phosphor and the second phosphor. A semiconductor light emitting device characterized in that. 청구항 1에 있어서,
구조물은 투광성 절연 기판에 구비된 반사막, 투광성 절연 기판에 구비된 거친 표면, 복수의 반도체층 내에 구비된 거친 표면 및 복수의 반도체층 위에 구비된 거친 표면 중의 적어도 하나를 포함하는 것을 특징으로 하는 반도체 발광소자. The method according to claim 1,
The structure includes at least one of a reflective film provided on the transparent insulating substrate, a rough surface provided on the transparent insulating substrate, a rough surface provided in the plurality of semiconductor layers, and a rough surface provided on the plurality of semiconductor layers. device. 청구항 1에 있어서,
구조물은 투광성 절연 기판에 구비된 반사막을 포함하는 것을 특징으로 하는 반도체 발광소자. The method according to claim 1,
The structure is a semiconductor light emitting device, characterized in that it comprises a reflective film provided on the transparent insulating substrate. 청구항 1에 있어서,
제1 형광체가 제2 형광체보다 상대적으로 열적으로 안정한 형광체인 것을 특징으로 하는 반도체 발광소자.The method according to claim 1,
A semiconductor light emitting device, characterized in that the first phosphor is a phosphor that is relatively thermally stable than the second phosphor. 청구항 1에 있어서,
제2 형광체는 긴 파장의 광에 대해 제1 형광체보다 상대적으로 잘 여기되는 형광체인 것을 특징으로 하는 반도체 발광소자. The method according to claim 1,
The second phosphor is a phosphor that is excited relatively well than the first phosphor for a long wavelength of light, characterized in that the semiconductor light emitting device. 청구항 1에 있어서,
제2 형광체는 낮은 에너지의 광에 대해 제1 형광체보다 상대적으로 잘 여기되는 형광체인 것을 특징으로 하는 반도체 발광소자. The method according to claim 1,
The second phosphor is a phosphor that is excited relatively well than the first phosphor for low energy light. 청구항 1 내지 청구항 6에 있어서,
투광성 절연 기판은 사파이어 기판인 것을 특징으로 하는 반도체 발광소자.The method according to claim 1 to 6,
The transparent insulating substrate is a semiconductor light emitting device, characterized in that the sapphire substrate. 반도체 발광소자를 제조하는 방법에 있어서,
투광성 절연 기판; 투광성 절연 기판 위에 순차로 형성된 복수의 반도체층;으로서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층, 제1 반도체층과 제2 반도체층 사이에 개재되며 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 가지는 복수의 반도체층; 투광성 절연 기판의 반대 측에서 복수의 반도체층에 전류를 공급하도록 제1 반도체층과 전기적으로 연결된 제1 전극; 투광성 절연 기판의 반대 측에서 복수의 반도체층에 전류를 공급하도록 제2 반도체층과 전기적으로 연결된 제2 전극; 및 상기 반도체 칩의 측방으로의 광 방출양보다 상기 반도체 칩의 상방으로의 광 방출양이 많게 하는 구조물;을 포함하는 반도체 칩을 준비하는 단계; 그리고,
반도체 칩의 상면에 제1 형광체를 놓이게 하고, 제2 형광체를 함유하는 봉지제로 반도체 칩과 제1 형광체를 덮어, 구조물의 도입에 의해 반도체 칩의 상방으로 증가되어 방출되는 광이 제1 형광체와 제2 형광체를 통과하도록 하여 봉지제 밖으로 나오는 광의 분포를 균일하게 하는 단계;를 포함하는 것을 특징으로 하는 반도체 발광소자를 제조하는 방법.A method of manufacturing a semiconductor light emitting device,
A translucent insulating substrate; A plurality of semiconductor layers sequentially formed on the light-transmissive insulating substrate, the first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and between the first semiconductor layer and the second semiconductor layer. A plurality of semiconductor layers interposed and having an active layer generating light through recombination of electrons and holes; A first electrode electrically connected with the first semiconductor layer to supply current to the plurality of semiconductor layers on the opposite side of the translucent insulating substrate; A second electrode electrically connected with the second semiconductor layer to supply current to the plurality of semiconductor layers on the opposite side of the translucent insulating substrate; Preparing a semiconductor chip comprising a; and a structure to make the amount of light emitted upward of the semiconductor chip than the amount of light emitted toward the side of the semiconductor chip; And,
The first phosphor is placed on the upper surface of the semiconductor chip, the encapsulant containing the second phosphor is covered with the semiconductor chip and the first phosphor, and the light emitted and increased by the introduction of the structure is emitted from the first phosphor and the first phosphor. 2 to pass through the phosphor to uniform the distribution of the light exiting the encapsulant; manufacturing method of a semiconductor light emitting device comprising a. 청구항 8에 있어서,
구조물은 투광성 절연 기판에 구비된 반사막, 투광성 절연 기판에 구비된 거친 표면, 복수의 반도체층 내에 구비된 거친 표면 및 복수의 반도체층 위에 구비된 거친 표면 중의 적어도 하나를 포함하는 것을 특징으로 하는 반도체 발광소자를 제조하는 방법.The method according to claim 8,
The structure includes at least one of a reflective film provided on the transparent insulating substrate, a rough surface provided on the transparent insulating substrate, a rough surface provided in the plurality of semiconductor layers, and a rough surface provided on the plurality of semiconductor layers. Method of manufacturing the device. 청구항 9에 있어서,
투광성 절연 기판은 사파이어 기판인 것을 특징으로 하는 반도체 발광소자를 제조하는 방법.The method according to claim 9,
The light-transmissive insulating substrate is a method for manufacturing a semiconductor light emitting device, characterized in that the sapphire substrate.
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