KR102282944B1 - Lighting device - Google Patents

Abstract

An embodiment relates to a light emitting device.
The light emitting device according to the embodiment is disposed on a substrate, a lead frame including a first lead frame and a second lead frame electrically insulated on the substrate, a light emitting surface disposed on the first lead frame, and from which light is emitted and a light emitting device including an electrode disposed at one corner of the light emitting surface, disposed on the light emitting surface of the light emitting device, and disposed on a first phosphor layer including a first phosphor and a portion of the first phosphor layer, A second phosphor layer including a second phosphor disposed adjacent to the electrode, a lens including a predetermined phosphor, and a light emitting element, a lens covering the first phosphor layer and the second phosphor layer, the second lead frame is a wire ( It is connected to the electrode through w), and the lens has a hemispherical or semi-elliptical cross-section, or includes a convex or a concave portion, and a concave-convex shape is formed on the outermost surface of the lens, and the area of the lower surface of the first phosphor layer is a light emitting element is greater than or equal to the area of the light emitting surface of can According to the light emitting device according to this embodiment, even if the area of the light emitting surface of the light emitting element is increased, chromaticity deviation and luminance deviation caused by a difference in light emission intensity can be reduced.

Description

light emitting device {LIGHTING DEVICE}

An embodiment relates to a light emitting device.

A light emitting diode (LED) is a type of semiconductor device that converts electrical energy into light. Light emitting diodes have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps. Accordingly, many studies are being conducted to replace conventional light sources with light emitting diodes, and light emitting diodes are increasingly used as light sources for light emitting devices such as indoor and outdoor lamps, liquid crystal displays, electric signs, and street lights. .

A typical LED package includes a substrate having a lead frame, an LED chip disposed on the substrate, a phosphor layer disposed on the LED chip, and a lens covering the LED chip and the phosphor layer.

The size of the LED chip is getting bigger due to the development of technology and the improvement of performance. In this situation, it is very difficult for the light emitting layer of the LED chip to have a uniform current density. This is because even in the light emitting layer of the LED chip, a portion close to the electrode has a strong light emission intensity, and a portion farther from the electrode has a weak light emission intensity. Therefore, the difference in light emission intensity causes a problem in that unevenness or luminance unevenness occurs in the emission layer of the LED chip.

A stain generated in the light emitting layer of the LED chip may show a difference in chromaticity in the phosphor layer. In addition, it may have adverse effects such as color change or luminance unevenness in the lens.

An embodiment provides a light emitting device capable of reducing chromaticity deviation and luminance deviation of light generated by a difference in light emission intensity even when the area of the light emitting surface of the light emitting element is increased.

In addition, there is provided a light emitting device in which emitted light is uniform even when the size of the light emitting element is increased.

In addition, there is provided a light emitting device that does not cause color change or luminance unevenness in the lens when the lens is used.

A light emitting device according to an embodiment includes: a substrate; a lead frame disposed on the substrate and including a first lead frame and a second lead frame electrically insulated; a light emitting device disposed on the first lead frame, the light emitting device including a light emitting surface from which light is emitted and an electrode disposed at one corner of the light emitting surface; a first phosphor layer disposed on the light emitting surface of the light emitting device and including a first phosphor; a second phosphor layer disposed on a portion of the first phosphor layer and including a second phosphor disposed adjacent to the electrode; and a lens including a predetermined phosphor and covering the light emitting element, the first phosphor layer, and the second phosphor layer, wherein the second lead frame is connected to the electrode through a wire (w), and the lens has a hemispherical or semi-elliptical cross-section, or includes a convex portion or a concave portion, a concave-convex shape is formed on the outermost surface of the lens, and the area of the lower surface of the first phosphor layer is larger than the area of the light emitting surface of the light emitting device or the same, the electrode may include a first electrode and a second electrode, and the second phosphor layer may include a second phosphor layer 2A adjacent to the first electrode and a phosphor layer 2B adjacent to the second electrode. According to the light emitting device according to this embodiment, even when the area of the light emitting surface of the light emitting element is increased, it is possible to reduce chromaticity deviation and luminance deviation caused by a difference in light emission intensity.

A light emitting device according to an embodiment includes: a substrate; a lead frame disposed on the substrate and including a first lead frame and a second lead frame electrically insulated; a light emitting device disposed on the first lead frame, the light emitting device including a light emitting surface from which light is emitted and an electrode disposed at one corner of the light emitting surface; a phosphor layer disposed on the light emitting surface of the light emitting device and including a phosphor; and a lens including a predetermined phosphor and covering the light emitting element and the phosphor layer, wherein the second lead frame is connected to the electrode through a wire w, and the lens has a hemispherical or semi-elliptical cross-section shape, or includes a convex portion or a concave portion, a concave-convex shape is formed on the outermost surface of the lens, an area of a lower surface of the phosphor layer is greater than or equal to an area of a light-emitting surface of the light emitting device, and the phosphor layer is the electrode a first phosphor layer disposed adjacent to the light emitting device and a second phosphor layer disposed on the remaining portion where the first phosphor layer is not disposed on the light emitting surface of the light emitting device, wherein the concentration of the phosphor included in the first phosphor layer may be greater than the concentration of the phosphor included in the second phosphor layer. According to the light emitting device according to this embodiment, even when the area of the light emitting surface of the light emitting element is increased, it is possible to reduce chromaticity deviation and luminance deviation caused by a difference in light emission intensity.

When the light emitting device according to the embodiment is used, color deviation or luminance deviation can be reduced by controlling the light emission deviation on the light emitting surface of the light emitting element through the phosphor layer.

In addition, even if the size of the light emitting device increases, there is an advantage that light emitted from the light emitting device is uniform.

In addition, there is an advantage in that color change or luminance unevenness does not occur even when a lens is used.

1 is a cross-sectional view of a light emitting device according to a first embodiment;
FIG. 2 is a plan view of the first phosphor layer and the second phosphor layer shown in FIG. 1 as viewed from above;
Fig. 3 is a cross-sectional view taken along line A-A' shown in Fig. 2;
4 is a perspective view of a first phosphor layer, a second phosphor layer, and a light emitting device shown in FIG. 1 ;
Fig. 5 is a cross-sectional perspective view taken along line B-B' shown in Fig. 4;
6 is a modified example of a second phosphor layer;
Fig. 7 is a cross-sectional view of a light emitting device according to a second embodiment.
FIG. 8 is a plan view of the first phosphor layer and the second phosphor layer shown in FIG. 7 as viewed from above;
9 is a perspective view of a first phosphor layer, a second phosphor layer, and a light emitting device shown in FIG. 7 ;
Fig. 10 is a cross-sectional perspective view taken along line C-C' shown in Fig. 9;
11 is a cross-sectional view of a light emitting device according to a third embodiment.
12 is a plan view of the phosphor layer shown in FIG. 11 as viewed from above;
Fig. 13 is a cross-sectional view taken along line D-D' shown in Fig. 12;
14 is a modified example of a phosphor layer.
15 is a view for explaining a method of manufacturing first and second phosphor layers of the light emitting device according to the first embodiment;
Fig. 16 is a view for explaining another method of manufacturing the first and second phosphor layers of the light emitting device according to the first embodiment;

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not fully reflect the actual size.

In the description of the embodiment according to the present invention, in the case where one element is described as being formed "on or under" of another element, above (above) or below (on or under) includes both elements in which two elements are in direct contact with each other or one or more other elements are disposed between the two elements indirectly. In addition, when expressed as “up (up) or down (on or under)”, the meaning of not only the upward direction but also the downward direction based on one element may be included.

Hereinafter, a light emitting device according to an embodiment of the present invention will be described with reference to the accompanying drawings.

<First embodiment>

1 is a cross-sectional view of a light emitting device according to a first embodiment, FIG. 2 is a plan view of the first phosphor layer and the second phosphor layer shown in FIG. 1 as viewed from above, and FIG. 3 is A-A′ shown in FIG. 4 is a perspective view of the first phosphor layer, the second phosphor layer, and the light emitting device shown in FIG. 1 , and FIG. 5 is a cross-sectional perspective view taken along line B-B′ shown in FIG. 4 .

1 to 5 , the light emitting device according to the first embodiment includes a substrate 100 , lead frames 200a and 200b , a light emitting device 300 , a first phosphor layer 400 , and a second phosphor layer. 500 and a lens 600 may be included.

A light emitting device 300 , a first phosphor layer 400 , a second phosphor layer 500 , and a lens 600 are disposed on the substrate 100 . Lead frames 200a and 200b may be disposed on the substrate 100 .

The substrate 100 may be of various types such as a printed circuit board (PCB), a silicon wafer, a resin, and a sub-mount. In addition, according to the material used for the substrate 100 , the light emitting device according to the embodiment may be classified into a plastic package, a ceramic package, a metal package, and the like.

The lead frames 200a and 200b are disposed on the substrate 100 . The lead frames 200a and 200b may include a first lead frame 200a and a second lead frame 200b. The first lead frame 200a and the second lead frame 200b may be directly or indirectly electrically connected to the light emitting device 300 . For example, the first lead frame 200a may be directly connected to the light emitting device 300 , and the second lead frame 200b may be indirectly connected to the light emitting device 300 through a wire w.

The light emitting device 300 is disposed on the substrate 100 .

The light emitting device 300 may be disposed on the first lead frame 200a.

The light emitting device 300 includes an upper surface. The upper surface may be a light emitting surface that emits light. For example, the entire upper surface of the light emitting device 300 may be a light emitting surface, or a portion of the upper surface may be a light emitting surface. In addition, light may be emitted from the side of the light emitting device 300 , but the present invention is not limited thereto.

The light emitting device 300 may include electrodes 350a and 350b. The electrodes 350a and 350b may be disposed on at least one corner of the light emitting surface of the light emitting device 300 . The electrodes 350a and 350b may be connected to one end of the wire w. Here, the electrodes 350a and 350b may be two or more. Specifically, the first electrode 350a is disposed at the first corner of the light emitting surface of the light emitting device 300 , and the second electrode 350b is disposed at the second corner of the light emitting surface of the light emitting device 300 . can If there are two or more electrodes 350a and 350b, two or more wires w may be used. When there are two or more electrodes 350a and 350b, there is an advantage in that the luminance distribution of the light emitting surface is more evenly distributed over the entire light emitting surface than in a light emitting device having one electrode, and there is also an advantage in that color deviation is reduced. Accordingly, the reliability of the light emitting device is improved, and there is also an advantage that irregularity due to light emission can be reduced.

The first phosphor layer 400 may be disposed on the light emitting device 300 . Specifically, the first phosphor layer 400 may be disposed on the light emitting surface of the light emitting device 300 . The area of the light emitting surface of the light emitting device 300 may be equal to or smaller than the area of the lower surface of the first phosphor layer 400 . If the area of the light emitting surface of the light emitting device 300 is larger than the area of the lower surface of the first phosphor layer 400 , some light emitted from the light emitting surface of the light emitting device 300 may not be incident on the first phosphor layer 400 . possible problems may arise.

The light emitting device 300 may include a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. For example, the light emitting structure may be provided in a form in which an active layer is disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

The first conductivity-type semiconductor layer may include an n-type semiconductor layer and may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. Si, Ge, Sn, An n-type dopant such as Se or Te may be doped.

In the active layer, electrons (or holes) injected through the first conductivity type semiconductor layer and holes (or electrons) injected through the second conductivity type semiconductor layer meet each other to form an energy band according to the material forming the active layer. It is a layer that emits light due to the difference in the band gap of The active layer may be formed of any one of a single well structure, a multi-well structure, a quantum dot structure, or a quantum wire structure, but is not limited thereto.

The second conductivity type semiconductor layer may be implemented as a p-type semiconductor layer and may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. Mg, Zn, Ca, A p-type dopant such as Sr or Ba may be doped.

Meanwhile, the first conductivity-type semiconductor layer may include a p-type semiconductor layer and the second conductivity-type semiconductor layer may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed under the second conductivity-type semiconductor layer. Accordingly, the light emitting structure may include at least one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The light emitting device 300 may selectively emit light in a range of a visible ray band to an ultraviolet ray band, and may emit light having an inherent color of a semiconductor material.

The light emitting device 300 may be a light emitting diode chip emitting visible light such as red, green, or blue light or a light emitting diode chip emitting ultraviolet light.

The first phosphor layer 400 is disposed on the light emitting device 300 . Specifically, the first phosphor layer 400 may be disposed on the light emitting surface of the light emitting device 300 .

The first phosphor layer 400 may include a lower surface and an upper surface. The lower surface may be in contact with the light emitting surface of the light emitting device 300 . A portion of the upper surface may be in contact with the lower surface of the second phosphor layer 500 , and the remaining portion may be in contact with the lens 600 .

The thickness of the first phosphor layer 400 may be 40 (μm) or more and 150 (μm) or less. If the thickness of the first phosphor layer 400 is less than 40 (μm), the light conversion efficiency may be reduced, and it is substantially difficult to manufacture the first phosphor layer 400, and if it exceeds 150 (μm), the luminous flux decreases by about 5% or more. There is a problem that occurs.

The second phosphor layer 500 is disposed on the first phosphor layer 400 . Specifically, the second phosphor layer 500 may be disposed on a portion of the upper surface of the first phosphor layer 400 . Here, a portion of the upper surface of the first phosphor layer 400 may be, specifically, a portion adjacent to the electrodes 350a and 350b.

The second phosphor layer 500 may include a lower surface and an upper surface. The lower surface may contact the upper surface of the first phosphor layer 400 , and the upper surface may contact the lens 600 .

The area of the upper surface or the lower surface of the second phosphor layer 500 may be 10 (%) or more and 60 (%) or less of the area of the light emitting surface of the light emitting device 300 . When the area of the upper surface or the lower surface of the second phosphor layer 500 is less than 10 (%) or more than 60 (%) of the area of the light emitting surface of the light emitting device 300 , the first phosphor layer 400 and the second phosphor It is difficult to obtain a uniform emission intensity of light emitted from the layer 500 .

The thickness of the second phosphor layer 500 may be 40 (μm) or more and 150 (μm) or less. If the thickness of the second phosphor layer 500 is less than 40 (μm), the light conversion efficiency may be reduced, and it is substantially difficult to manufacture the second phosphor layer 500 , and if it exceeds 150 (μm), the luminous flux decreases by about 5% or more There is a problem that occurs.

The thickness of the second phosphor layer 500 may be constant as shown in the drawings, but is not limited thereto. The thickness of the second phosphor layer 500 may not be constant. For example, the thickness of the second phosphor layer 500 may gradually decrease as it moves away from the electrodes 350a and 350b. More specifically, the upper surface of the second phosphor layer 500' may be an inclined surface as shown in FIG. 6(a), or a curved surface concave downward as shown in FIG. 6(b). . As such, when the thickness of the second phosphor layer 500 becomes thinner as it moves away from the electrodes 350a and 350b, the difference in chromaticity that may occur at the boundary line between the second phosphor layer 500 and the first phosphor layer 400 is It can reduce stains, etc. It is also possible to change the light distribution angle of the emitted light.

The first and second phosphor layers 400 and 500 may be made of a resin material, and may include a predetermined phosphor. The predetermined phosphor may include at least one of a yellow phosphor, a green phosphor, and a red phosphor.

The yellow phosphor is excited by light of 500 nm or less and emits light having a peak wavelength between 530 nm and 580 nm. The yellow phosphor may be a silicate-based phosphor, a garnet-based YAG phosphor, or an oxynitride-based phosphor. Yellow phosphor is _{Y 3 Al 5 O 12: Ce} 3+ (Ce: YAG), CaAlSiN 3: Ce 3 +, can be selected from the selected fluorescent substance, and / or the BOSE family from Eu ^{2 +} -SiAlON series. The yellow phosphor may also be doped to any suitable level to provide light output of a desired wavelength. Ce and/or Eu may be doped into the phosphor at a dopant concentration ranging from about 0.1% to about 20%.

The green phosphor is excited by light of 400 nm or less and emits light having a dominant wavelength between 450 nm and 530 nm. The green phosphor may be a silicate-based phosphor, a nitride-based phosphor, or an oxynitride-based phosphor.

The red phosphor is excited by light of 580 nm or less and emits light having a dominant wavelength between 600 nm and 650 nm. The red phosphor may be a nitride-based or sulfide-based phosphor. Red phosphor CaAlSiN _3: may include Eu ^{2 +:} Eu ^{2 +} and Sr ₂ Si ₅ N _8. This phosphor can maintain quantum efficiency above 80% at a temperature of 150°C or higher. Other red phosphors that can be used is ^{_{CaSiN 2: Ce 3 +, CaSiN}} 2: Eu 2 + , as well as Eu ^{2 +} phosphor -SiAlON fluorescent material selected from a sequence, and / or the (Ca, Si, Ba) SiO 4: Eu 2 + (BOSE) includes a phosphor selected from the series.

The phosphor included in the first phosphor layer 400 and the phosphor included in the second phosphor layer 500 may be of the same material, but are not limited thereto. The phosphors may be of different materials.

The concentration of the phosphor included in the first phosphor layer 400 and the concentration of the phosphor included in the second phosphor layer 500 may be the same, but the present invention is not limited thereto. The concentrations of the phosphors may be different from each other.

The lens 600 is disposed on the substrate 100 and covers the light emitting device 300 , the first phosphor layer 400 , and the second phosphor layer 500 .

The lens 600 protects the light emitting device 300 , the first phosphor layer 400 , and the second phosphor layer 500 from external foreign matter or moisture, and the first phosphor layer 400 and the second phosphor layer 500 . ) can be diffused or condensed.

The lens 600 may include a predetermined phosphor. The shape of the cross-section of the lens 600 may be a hemispherical shape, a semi-elliptical shape, or a shape including a convex part or a concave part, but is not limited thereto. In addition, a concave-convex shape may be formed on the outermost surface of the lens 600 to further diffuse the light.

In the light emitting device according to the first embodiment, the second phosphor layer 500 is disposed on a portion of the first phosphor layer 400 , and the second phosphor layer 500 is adjacent to the electrodes 350a and 350b. Because of this arrangement, even if the area of the light emitting surface of the light emitting device 300 is increased, chromaticity deviation or luminance deviation caused by the difference in light emission intensity between the peripheral portions of the electrodes 350a and 350b and the remaining portions can be reduced. Accordingly, there is an advantage in that the chromaticity deviation or luminance deviation of light emitted from the lens 600 can be reduced.

<Second embodiment>

7 is a cross-sectional view of a light emitting device according to the second embodiment, FIG. 8 is a plan view of the first phosphor layer and the second phosphor layer shown in FIG. 7 as viewed from above, and FIG. 9 is the first phosphor layer shown in FIG. 7 . , a perspective view of a second phosphor layer and a light emitting device, and FIG. 10 is a cross-sectional perspective view taken along line C-C′ shown in FIG. 9 .

7 to 10 , the light emitting device according to the second embodiment includes a substrate 100 , lead frames 200a and 200b , a light emitting device 300 , a first phosphor layer 400 , and a second phosphor layer. (500a, 500b) and a lens 600 may be included.

Here, the substrate 100, the lead frames 200a and 200b, the light emitting device 300, the first phosphor layer 400, and the lens 600 of the light emitting device according to the second embodiment are shown in FIGS. 1 to 5 . Since it is the same as the substrate 100, the lead frames 200a, 200b, the light emitting device 300, the first phosphor layer 400, and the lens 600 of the light emitting device according to the first embodiment, a description thereof will be omitted. do.

Like the second phosphor layer 500 according to the first embodiment, the second phosphor layers 500a and 500b according to the second embodiment are disposed on a portion of the first phosphor layer 400 .

The positions of the first electrode 350a and the second electrode 350b of the light emitting device 300 shown in FIGS. 7 to 10 are, the first electrode 350a of the light emitting device 300 shown in FIGS. 1 to 5 . ) and the second electrode 350b are different from each other. Specifically, the first electrode 350a and the second electrode 350b shown in FIGS. 7 to 10 are respectively disposed at two corners facing each other among several corners of the light emitting device 300 . Accordingly, the positions of the second phosphor layers 500a and 500b are different from the positions of the second phosphor layers 500 illustrated in FIGS. 1 to 5 .

There may be two or more second phosphor layers 500a and 500b. Specifically, the second phosphor layers 500a and 500b may include a 2A phosphor layer 500a and a 2B phosphor layer 500b.

The 2A phosphor layer 500a is disposed on the first phosphor layer 400 and is disposed adjacent to the first electrode 350a.

The 2B phosphor layer 500b is disposed on the first phosphor layer 400 and is disposed adjacent to the second electrode 350b.

In the drawing, the 2A phosphor layer 500a and the 2B phosphor layer 500b are disposed apart from each other, but the present invention is not limited thereto. The 2A phosphor layer 500a and the 2B phosphor layer 500b are not disposed apart from each other, and portions may be connected to each other or disposed in contact with each other.

In the light emitting device according to the second embodiment, the second phosphor layers 500a and 500b are disposed on a portion of the first phosphor layer 400 , and the second phosphor layers 500a and 500b include electrodes 350a and 350b. ) adjacent to the light emitting device 300, even if the area of the light emitting surface of the light emitting element 300 is widened, the chromaticity deviation or luminance deviation caused by the difference in light emission intensity between the peripheral portions of the electrodes 350a and 350b and the remaining portions is reduced can do. Accordingly, there is an advantage in that the chromaticity deviation or luminance deviation of light emitted from the lens 600 can be reduced.

The thickness of the second phosphor layers 500a and 500b may be constant as shown in the drawings, but is not limited thereto. The thickness of the second phosphor layers 500a and 500b may not be constant. For example, the thickness of the second phosphor layers 500a and 500b may gradually decrease as the distance from the electrodes 350a and 350b increases. That is, the second phosphor layers 500a and 500b may have an inclined upper surface as shown in FIG. 6A or a downwardly concave curved surface as shown in FIG. 6B . As described above, if the thickness of the second phosphor layers 500a and 500b becomes thinner as the distance from the electrodes 350a and 350b increases, the second phosphor layers 500a and 500b and the first phosphor layer 400 may be formed at the boundary line. It can reduce the color difference and stains that can be applied. It is also possible to change the light distribution angle of the emitted light.

<Third embodiment>

11 is a cross-sectional view of the light emitting device according to the third embodiment, FIG. 12 is a plan view of the phosphor layer shown in FIG. 11 as viewed from above, and FIG. 13 is a cross-sectional view taken along line D-D′ shown in FIG. 12 .

11 to 13 , the light emitting device according to the third embodiment includes a substrate 100 , lead frames 200a and 200b , a light emitting device 300 , a phosphor layer 400 ′, and a lens 600 . may include Here, the substrate 100, the lead frames 200a and 200b, the light emitting device 300, and the lens 600 of the light emitting device according to the third embodiment shown in FIGS. 11 to 13 are shown in FIGS. 1 to 5 . Since it is the same as the substrate 100 , the lead frames 200a and 200b , the light emitting device 300 , and the lens 600 of the light emitting device according to the first exemplary embodiment, a description thereof will be omitted.

The phosphor layer 400 ′ is disposed on the light emitting surface of the light emitting device 300 .

The phosphor layer 400' may include a first phosphor layer 400'a and a second phosphor layer 400'b.

The first phosphor layer 400 ′a is disposed on the light emitting surface of the light emitting device 300 , and is disposed adjacent to the electrodes 350a and 350b .

The area of the upper surface or the lower surface of the first phosphor layer 400 ′a may be 10 (%) or more and 90 (%) or less of the area of the light emitting surface of the light emitting device 300 . When the area of the upper surface or the lower surface of the first phosphor layer 400'a is less than 10 (%) or more than 90 (%) of the area of the light emitting surface of the light emitting device 300, the phosphor layer 400' It is difficult to obtain a uniform luminous intensity of light.

The second phosphor layer 400 ′b is disposed on the light emitting surface of the light emitting device 300 on the remaining portion where the first phosphor layer 400 ′a is not disposed.

The first phosphor layer 400'a and the second phosphor layer 400'b include a predetermined phosphor. The phosphor included in the first phosphor layer 400'a may be the same as the phosphor included in the second phosphor layer 400'b.

However, the concentration of the phosphor included in the first phosphor layer 400'a is different from the concentration of the phosphor included in the second phosphor layer 400'b. Specifically, the concentration of the phosphor included in the first phosphor layer 400'a is greater than the concentration of the phosphor included in the second phosphor layer 400'b. Here, the concentration of the phosphor included in the first phosphor layer 400'a may be 1.5 times or less of the concentration of the phosphor included in the second phosphor layer 400'b. When the concentration of the phosphor included in the first phosphor layer 400'a exceeds 1.5 times the concentration of the phosphor included in the second phosphor layer 400'b, the concentration of the phosphor included in the first phosphor layer 400'a is Since the concentration of the phosphor is too dark, there may be a problem in that the amount of light emitted from the first phosphor layer 400'a is significantly reduced.

Although it is illustrated in the drawing that the phosphor layer 400' includes the first phosphor layer 400'a and the second phosphor layer 400'b, the phosphor layer 400' is not limited thereto. As shown in FIG. 14 , there is one phosphor layer 400 ′, but the concentration of the phosphor included in the phosphor layer 400 ′ may be different for each part. Specifically, the concentration of the phosphor may be lower in the portion farther from the electrode than in the portion adjacent to the electrode. In addition, as the distance from the electrode increases, the concentration of the phosphor may gradually decrease.

In the light emitting device according to the third embodiment, the phosphor layer 400 ′ is disposed on the light emitting element 300 , and the concentration of the phosphor included in the phosphor layer 400 ′ is equal to the portion adjacent to the electrodes 350a and 350b . Since they are different in other parts, even if the area of the light emitting surface of the light emitting device 300 is widened, the chromaticity deviation or luminance deviation caused by the difference in light emission intensity between the peripheral portions of the electrodes 350a and 350b and the remaining portions is reduced. can be reduced Accordingly, there is an advantage in that the chromaticity deviation or luminance deviation of light emitted from the lens 600 can be reduced.

<Method 1 for manufacturing the first and second phosphor layers of the light emitting device according to the first embodiment>

15 is a view for explaining a method of manufacturing the first and second phosphor layers of the light emitting device according to the first embodiment.

Referring to FIG. 15A , a mask is formed on the light emitting surface of the light emitting device 300 and the electrode 350a, and the phosphor composition 900, which will be the first and second phosphor layers later, is prepared. It is sprayed on the light emitting surface of the light emitting device 300 by a spray method. The upper surface of the phosphor composition 900 is flattened while pushing with a squeegee (S) on the mask.

Next, referring to FIG. 15B , when the phosphor composition 900 is cured to some extent, the mask is removed and a portion of the phosphor composition 900 is pressed with a squeegee (S). Through this process, the first and second phosphor layers 400 and 500 shown in FIGS. 1 to 5 may be formed.

<Method 2 for manufacturing the first and second phosphor layers of the light emitting device according to the first embodiment>

16 is a view for explaining another method of manufacturing the first and second phosphor layers of the light emitting device according to the first embodiment.

Referring to FIG. 16A , a mask is formed on the light emitting surface of the light emitting device 300 and the electrode 350a, and the primary phosphor composition 900, which will be a first phosphor layer later, is emitted. It is formed by printing on the light emitting surface of the device 300 .

Next, referring to FIG. 16B , when the primary phosphor composition 900 is cured to some extent, a mask is formed on the primary phosphor composition 900 , and a second phosphor layer is formed later. The phosphor composition 900 ′ is formed on the primary phosphor composition 900 by a printing method. Through this process, the first and second phosphor layers 400 and 500 shown in FIGS. 1 to 5 may be formed.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above in the range that does not depart from the essential characteristics of this embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be implemented with modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

100: substrate
200a, 200b: lead frame
300: light emitting element
400: first phosphor layer
500: second phosphor layer
600: lens

Claims (10)

Board;
a lead frame disposed on the substrate and including a first lead frame and a second lead frame electrically insulated;
a light emitting device disposed on the first lead frame, the light emitting device including a light emitting surface from which light is emitted and an electrode disposed at one corner of the light emitting surface;
a first phosphor layer disposed on the light emitting surface of the light emitting device and including a first phosphor;
a second phosphor layer disposed on a portion of the first phosphor layer and including a second phosphor disposed adjacent to the electrode; and
A lens including a predetermined phosphor and covering the light emitting element, the first phosphor layer, and the second phosphor layer;
The second lead frame is connected to the electrode through a wire (w), and the lens has a hemispherical or semi-elliptical cross-section, or includes a convex portion or a concave portion,
An uneven shape is formed on the outermost surface of the lens,
The area of the lower surface of the first phosphor layer is greater than or equal to the area of the light emitting surface of the light emitting device,
The electrode includes a first electrode and a second electrode,
wherein the second phosphor layer includes a second phosphor layer 2A adjacent to the first electrode and a phosphor layer 2B adjacent to the second electrode. The method of claim 1,
The first phosphor and the second phosphor are different from each other,
The thickness of the first phosphor layer or the second phosphor layer is 40 (μm) or more and 150 (μm) or less,
An area of an upper surface or a lower surface of the second phosphor layer is 10 (%) or more and 60 (%) or less of an area of a light emitting surface of the light emitting element. delete delete The method of claim 1,
The thickness of the second phosphor layer becomes thinner as it goes away from the electrode,
An upper surface of the second phosphor layer is an inclined surface or a curved surface. delete delete Board;
a lead frame disposed on the substrate and including a first lead frame and a second lead frame electrically insulated;
a light emitting device disposed on the first lead frame, the light emitting device including a light emitting surface from which light is emitted and an electrode disposed at one corner of the light emitting surface;
a phosphor layer disposed on the light emitting surface of the light emitting device and including a phosphor; and
A lens including a predetermined phosphor and covering the light emitting element and the phosphor layer;
The second lead frame is connected to the electrode through a wire (w),
The lens has a hemispherical or semi-elliptical cross-section, or includes a convex portion or a concave portion,
An uneven shape is formed on the outermost surface of the lens,
The area of the lower surface of the phosphor layer is greater than or equal to the area of the light emitting surface of the light emitting device,
The phosphor layer,
a first phosphor layer disposed adjacent to the electrode and a second phosphor layer disposed on the remaining portion where the first phosphor layer is not disposed on the light emitting surface of the light emitting device,
The light emitting device, wherein the concentration of the phosphor included in the first phosphor layer is greater than the concentration of the phosphor included in the second phosphor layer. delete delete

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