KR20130093072A - 복수의 광학 장치를 제조하는 방법 - Google Patents

복수의 광학 장치를 제조하는 방법 Download PDF

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Publication number
KR20130093072A
KR20130093072A KR1020137000745A KR20137000745A KR20130093072A KR 20130093072 A KR20130093072 A KR 20130093072A KR 1020137000745 A KR1020137000745 A KR 1020137000745A KR 20137000745 A KR20137000745 A KR 20137000745A KR 20130093072 A KR20130093072 A KR 20130093072A
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KR
South Korea
Prior art keywords
filter
substrate
optical
wafer
wafer scale
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020137000745A
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English (en)
Korean (ko)
Inventor
하르트무트 루드만
페터 리엘
Original Assignee
헵타곤 마이크로 옵틱스 피티이. 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 헵타곤 마이크로 옵틱스 피티이. 리미티드 filed Critical 헵타곤 마이크로 옵틱스 피티이. 리미티드
Publication of KR20130093072A publication Critical patent/KR20130093072A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Blocking Light For Cameras (AREA)
  • Lens Barrels (AREA)
  • Studio Devices (AREA)
  • Optical Filters (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
KR1020137000745A 2010-06-14 2011-06-10 복수의 광학 장치를 제조하는 방법 Withdrawn KR20130093072A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35438910P 2010-06-14 2010-06-14
US61/354,389 2010-06-14
PCT/CH2011/000140 WO2011156926A1 (en) 2010-06-14 2011-06-10 Method of manufacturing a plurality of optical devices

Publications (1)

Publication Number Publication Date
KR20130093072A true KR20130093072A (ko) 2013-08-21

Family

ID=44454697

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137000745A Withdrawn KR20130093072A (ko) 2010-06-14 2011-06-10 복수의 광학 장치를 제조하는 방법

Country Status (8)

Country Link
US (1) US20130162882A1 (enExample)
EP (1) EP2580781A1 (enExample)
JP (1) JP2013531812A (enExample)
KR (1) KR20130093072A (enExample)
CN (1) CN103201838A (enExample)
SG (1) SG186214A1 (enExample)
TW (1) TW201222795A (enExample)
WO (1) WO2011156926A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180102126A (ko) * 2016-01-13 2018-09-14 프라운호퍼 게젤샤프트 쭈르 푀르데룽 데어 안겐반텐 포르슝 에. 베. 멀티-애퍼처 이미징 디바이스들, 이를 생성하기 위한 방법들 및 이미징 시스템

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CN103858230B (zh) * 2011-08-10 2018-03-27 新加坡恒立私人有限公司 光电子模块和用于制造该光电子模块的方法
US9595553B2 (en) * 2012-11-02 2017-03-14 Heptagon Micro Optics Pte. Ltd. Optical modules including focal length adjustment and fabrication of the optical modules
US9621773B2 (en) 2013-02-22 2017-04-11 Heptagon Micro Optics Pte. Ltd. Optical imaging apparatus, in particular for computational imaging, having further functionality
US9658109B2 (en) 2013-03-15 2017-05-23 Heptagon Micro Optics Pte. Ltd. Non-contact thermal sensor module
US9923008B2 (en) * 2013-04-12 2018-03-20 Omnivision Technologies, Inc. Wafer-level array cameras and methods for fabricating the same
US20160307881A1 (en) * 2015-04-20 2016-10-20 Advanced Semiconductor Engineering, Inc. Optical sensor module and method for manufacturing the same
US20170047362A1 (en) * 2015-08-13 2017-02-16 Heptagon Micro Optics Pte. Ltd. Optoelectronic module with customizable spacers
WO2020152782A1 (ja) 2019-01-22 2020-07-30 オリンパス株式会社 内視鏡用撮像装置の製造方法、内視鏡用撮像装置、および、内視鏡
CN110534538A (zh) * 2019-09-03 2019-12-03 豪威光电子科技（上海）有限公司 镜头模组及其形成方法
CN110808259A (zh) * 2019-11-25 2020-02-18 华天慧创科技（西安）有限公司 一种晶圆透镜模组
GB202009957D0 (en) * 2020-06-30 2020-08-12 Ams Sensors Singapore Pte Ltd Spacer for an optical device
US11808959B2 (en) 2020-08-11 2023-11-07 Himax Technologies Limited Optical element and wafer level optical module

Family Cites Families (20)

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US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
US6783900B2 (en) * 2002-05-13 2004-08-31 Micron Technology, Inc. Color filter imaging array and method of formation
EP1443344A1 (en) 2003-01-29 2004-08-04 Heptagon Oy Manufacturing micro-structured elements
US7329861B2 (en) * 2003-10-14 2008-02-12 Micron Technology, Inc. Integrally packaged imaging module
EP1542074A1 (en) * 2003-12-11 2005-06-15 Heptagon OY Manufacturing a replication tool, sub-master or replica
CN1934872B (zh) * 2004-01-26 2016-08-03 数字光学公司 具有子像素分辨率的薄式照相机
EP1569276A1 (en) 2004-02-27 2005-08-31 Heptagon OY Micro-optics on optoelectronics
WO2008011003A2 (en) * 2006-07-17 2008-01-24 Tessera North America, Inc. Camera system and associated methods
WO2006109638A1 (ja) * 2005-04-08 2006-10-19 Konica Minolta Opto, Inc. 固体撮像素子及びその製造方法
US20070216048A1 (en) 2006-03-20 2007-09-20 Heptagon Oy Manufacturing optical elements
US7572480B2 (en) * 2006-10-19 2009-08-11 Federal-Mogul World Wide, Inc. Method of fabricating a multilayer ceramic heating element
US7692256B2 (en) * 2007-03-23 2010-04-06 Heptagon Oy Method of producing a wafer scale package
JP2009010261A (ja) * 2007-06-29 2009-01-15 Fujikura Ltd 半導体パッケージおよびその製造方法
TW200937642A (en) * 2007-12-19 2009-09-01 Heptagon Oy Wafer stack, integrated optical device and method for fabricating the same
EP2223173B1 (en) * 2007-12-19 2013-09-04 Heptagon Micro Optics Pte. Ltd. Camera device and manufacturing methods therefor
US20090159200A1 (en) 2007-12-19 2009-06-25 Heptagon Oy Spacer element and method for manufacturing a spacer element
TWI505703B (zh) * 2007-12-19 2015-10-21 新加坡恒立私人有限公司 光學模組，晶圓等級的封裝及其製造方法
JP5175620B2 (ja) * 2008-05-29 2013-04-03 シャープ株式会社 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器
US8828174B2 (en) * 2008-08-20 2014-09-09 Heptagon Micro Optics Pte. Ltd. Method of manufacturing a plurality of optical devices
JP5332423B2 (ja) * 2008-09-08 2013-11-06 ソニー株式会社 撮像装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180102126A (ko) * 2016-01-13 2018-09-14 프라운호퍼 게젤샤프트 쭈르 푀르데룽 데어 안겐반텐 포르슝 에. 베. 멀티-애퍼처 이미징 디바이스들, 이를 생성하기 위한 방법들 및 이미징 시스템
KR20190125532A (ko) * 2016-01-13 2019-11-06 프라운호퍼 게젤샤프트 쭈르 푀르데룽 데어 안겐반텐 포르슝 에. 베. 멀티-애퍼처 이미징 디바이스들, 이를 생성하기 위한 방법들 및 이미징 시스템
US10652438B2 (en) 2016-01-13 2020-05-12 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Multi-aperture imaging devices, methods for producing same and imaging system

Also Published As

Publication number Publication date
EP2580781A1 (en) 2013-04-17
SG186214A1 (en) 2013-01-30
CN103201838A (zh) 2013-07-10
US20130162882A1 (en) 2013-06-27
TW201222795A (en) 2012-06-01
JP2013531812A (ja) 2013-08-08
WO2011156926A1 (en) 2011-12-22

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PA0105 International application

Patent event date: 20130111

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid