KR20130074664A - Epoxy resin composition for encapsulating semiconductor device, and semiconductor apparatus using the same - Google Patents

Abstract

PURPOSE: An epoxy resin composition is provided to improve fluidity, warp, soldering resistance, and a curing reaction. CONSTITUTION: An epoxy resin composition for sealing semiconductor devices comprises an epoxy resin, a hardening agent, a hardening accelerator, and an inorganic filling. The epoxy resin comprises a naphthalene epoxy resin. The hardening agent comprises a modified triphenolmethane hardening agent. The hardening accelerator comprises an imidazole hardening accelerator. The naphthalene epoxy resin comprises a naphthalene epoxy resin represented by chemical formula 1. In chemical formula 1, R is C1-6 alkylene and n and m are 0 or 1, respectively.

Description

Epoxy resin composition for semiconductor element sealing and semiconductor device using the same {EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR APPARATUS USING THE SAME}

The present invention relates to an epoxy resin composition for sealing semiconductor elements and a semiconductor device using the same. More specifically, the present invention relates to an epoxy resin composition for sealing semiconductor devices excellent in flow characteristics, bending properties, solder resistance required in a lead-free solder process, and excellent in curing reaction, and a semiconductor device sealed using the semiconductor device. It is about.

In recent years, with the tendency of high integration of semiconductor devices, the size of semiconductor devices has been increased, the cell area has been reduced, and the wiring has been multilayered. Package methods for protecting semiconductor devices from external environments are also accelerating miniaturization and thinning due to high density mounting (ie, surface mounting). In addition, due to strict environmental regulations in sealing semiconductor devices, the use of lead (Pb) in the post solder process is prohibited. It is actively done.

Currently, lead-free solder materials used in place of lead (Pb) include tin (Sn), bismuth (Bi), and silver (Ag). When such materials are used, the solder process temperature is about 20 ° C. Should be high. Here, the semiconductor device is mainly sealed using an epoxy resin composition in order to protect it from the external environment. When the semiconductor device sealed with the epoxy resin composition is introduced into the lead-free solder process, the defect rate of the semiconductor device is increased. The improvement of the solder resistance by a resin composition is calculated | required. That is, when a semiconductor element sealed with an epoxy resin composition having a high water absorption rate is introduced into the lead-free solder process, the stress in the semiconductor element explodes due to the temperature rise of the solder process (water vaporization). It is difficult to obtain a reliable semiconductor device, such as cracks in the semiconductor device or peeling between the semiconductor device and the epoxy resin composition, so that the solder resistance improvement by the epoxy resin composition is required.

On the other hand, due to the high pinning of semiconductor devices, single-sided sealed semiconductor device packages such as QFN and BGA have become mainstream along with double-sided sealed semiconductor device packages such as DIP, SOP, and QFP. At this time, in the single-sided sealing type semiconductor device package, the bending of the package is a big problem in that only one side of the substrate is sealed with the epoxy resin composition. That is, the package is asymmetrically bent by sealing only one side of the substrate with the epoxy resin composition. When the package is bent, the stress is applied to the semiconductor element or the terminal junction between the semiconductor element and the substrate is incomplete and the package is electrically bent. The problem is that a poor connection occurs. In addition, the shrinkage between the epoxy resin composition, the substrate (substrate), and the semiconductor device is changed by the difference in the coefficient of linear expansion, such a difference in shrinkage rate also causes the package warpage, the above problems occur.

In order to solve the warpage problem of the package, a technique of increasing the glass transition temperature and decreasing the coefficient of linear expansion using a triphenol methane type epoxy resin and a triphenol methane type phenol resin has been proposed. By the way, the above-described technology can solve the warpage problem of the package, but because the absorption rate of the epoxy resin composition is very high and the solder resistance is poor, cracks occur in the semiconductor device or peeling between the semiconductor device and the epoxy resin composition occurs. Problem still remains.

In addition, a method of improving the warpage problem of the package by reducing the coefficient of linear expansion by increasing the amount of the inorganic filler has been proposed. However, the above method may cause a decrease in the fluidity of the epoxy resin composition to cause wire sweep or uncharged during molding (sealing of semiconductor elements).

An object of the present invention is to provide an epoxy resin composition for semiconductor element sealing that is excellent in flow characteristics, warpage characteristics, solder resistance required in a lead-free solder process, and also excellent in curing reaction.

Another object of the present invention is to provide an epoxy resin composition for sealing semiconductor elements with improved moisture absorption.

Still another object of the present invention is to provide a sealed semiconductor device using the epoxy resin composition for semiconductor element sealing.

These and other objects of the present invention can be achieved by the present invention which is described in detail.

One aspect of the present invention relates to an epoxy resin composition for semiconductor element sealing. The epoxy resin composition for sealing a semiconductor device is an epoxy resin; Curing agent; Curing accelerators; And an inorganic filler, wherein the epoxy resin comprises a naphthalene-based epoxy resin, the curing agent includes a modified triphenol methane-based curing agent, and the curing accelerator comprises an imidazole-based curing accelerator.

In embodiments, the naphthalene-based epoxy resin may have a structure of Formula 1:

[Formula 1]

(In Formula 1, R is alkylene having 1 to 6 carbon atoms, n and m are each 0 or 1).

Preferably, R may be CH ₂ .

In embodiments, the modified triphenol methane-based curing agent may have a structure of Formula 2:

[Formula 2]

(In the formula (2), the average value of n is 0 to 5, the average value of m is 1 to 5, and the average value of n + m is 1 to 10).

In an embodiment, the order of the two repeating units of Formula 2 may be randomly arranged.

The epoxy resin composition may include 3 to 20% by weight of epoxy resin, 2 to 15% by weight of curing agent, 0.02 to 0.4% by weight of curing accelerator, and 70 to 95% by weight of inorganic filler.

The naphthalene-based epoxy resin may be included in 40 to 100% by weight of the total epoxy resin.

The modified triphenol methane-based curing agent may be included in 40 to 100% by weight of the total curing agent.

The imidazole series curing accelerator may include 2-phenyl-4-methyl-5-hydroxymethylimidazole.

The imidazole-based curing accelerator may be included in 40 to 100% by weight of the total curing accelerator.

The epoxy resin composition for sealing a semiconductor device may further include a silane coupling agent.

The silane coupling agent may include an aminosilane coupling agent in an amount of 30 to 100% by weight in the total silane coupling agents.

Another aspect of the present invention relates to a semiconductor device in which a semiconductor element is sealed by using the epoxy resin composition.

The present invention provides a semiconductor device sealing that can improve the solder resistance required in the lead-free solder process by excellent flow resistance, bending characteristics, and solder resistance required in the lead-free solder process, excellent curing reaction, and minimized moisture absorption rate The present invention provides an epoxy resin composition for use and a semiconductor device sealed using the same.

The epoxy resin composition for semiconductor element sealing of the present invention is an epoxy resin; Curing agent; Curing accelerators; And inorganic fillers.

Hereinafter, each component will be described in detail below.

(A) an epoxy resin

The epoxy resin used in the present invention includes a naphthalene epoxy resin. The naphthalene epoxy resin may have a structure of Formula 1 below:

[Formula 1]

(In Formula 1, R is alkylene having 1 to 6 carbon atoms, n and m are each 0 or 1).

Epoxy resin represented by the formula (1) consists of a naphthalene skeleton exhibits a high glass transition temperature (Tg). In general, epoxy resins having rigid and excellent symmetry skeletons exhibit high glass transition temperatures. Epoxy resins represented by the general formula (1) have high glass transition temperatures because the naphthalene skeleton has a strong bond and excellent symmetry of the whole molecule. Will be displayed.

As such, the epoxy resin having a high glass transition temperature exhibits a low coefficient of linear expansion, and a low shrinkage ratio can be obtained as the coefficient of linear expansion is low.

In general, one of the causes of bending of a semiconductor device package is due to a difference in shrinkage of an epoxy resin sealed with a semiconductor member (for example, a substrate or a chip), and the difference in shrinkage of the semiconductor member is lower than that of an epoxy resin. Will appear. However, since the epoxy resin can obtain a low shrinkage ratio for the same reason as described above, it is possible to balance the shrinkage ratio with the semiconductor member, thereby improving the bending property of the semiconductor device package.

In addition, since naphthalene is hydrophobic in the epoxy resin structure of Chemical Formula 1, as the water absorption of the epoxy resin is minimized to minimize the amount of water contained in the epoxy resin, the solder resistance required in the lead-free solder process may also be improved. Can be.

On the other hand, the epoxy resin of the general formula (1) is n = 1 and m = 1, the cross-link density is increased, the low shrinkage and warpage characteristics are the best, but the flow properties may be reduced as the viscosity increases, n = 0 and m It is preferable to use an epoxy resin of = 1 (or n = 1 and m = 0) and an epoxy resin of n = 0 and m = 0.

The present invention may use other epoxy resins in addition to the naphthalene epoxy resin represented by the formula (1). At this time, the epoxy resin that can be used in combination is preferably an epoxy resin containing two or more epoxy groups in one molecule. Specific examples include phenol aralkyl type epoxy resins, biphenyl aralkyl type epoxy resins, cresol novolak type epoxy resins, phenol novolak type epoxy resins, biphenyl type epoxy resins, bisphenol type epoxy resins, dicyclopentadiene type epoxy resins and naphthalenes. Type epoxy resin, triphenol methane type epoxy resin, etc. are mentioned, It is not necessarily limited to this. These may be used alone or in combination of two or more. Of these, phenol aralkyl type epoxy resins or triphenol methane type epoxy resins may be preferably used.

When using another epoxy resin in addition to the naphthalene epoxy resin represented by the formula (1), it is preferable to use the naphthalene-based epoxy resin represented by the formula (1) 40 to 100% by weight based on 100% by weight of the total epoxy resin . It is possible to obtain the desired shrinkage and bending characteristics in the above range.

In addition, the epoxy resin of the present invention (epoxy resin represented by the formula (1) alone or epoxy resin represented by the formula (1) and the other epoxy resin in combination) is 3 ~ based on 100% by weight of the total epoxy resin composition 20 wt%, preferably 5-14 wt%. It is excellent in the fluidity in the above range, does not cause problems such as wire sweep during molding, and has a good shrinkage and absorption rate can be obtained excellent bending characteristics and package reliability.

(B) Curing agent

The curing agent used in the present invention includes a modified triphenol methane-based curing agent. The modified triphenol methane-based curing agent may have a structure of Formula 2:

[Formula 2]

(In the formula (2), the average value of n is 0 to 5, the average value of m is 1 to 5, and the average value of n + m is 1 to 10).

The modified triphenol methane-based curing agent represented by the formula (2) comprises a triphenol methane skeleton and a phenol novolac skeleton. Therefore, since the crosslinking point is short, the crosslinking density is increased when reacting with the naphthalene-based epoxy resin represented by Chemical Formula 1, thereby increasing the glass transition temperature of the resulting cured product. As such, the glass transition temperature of the cured product is increased and the coefficient of linear expansion is lowered as the curing agent represented by Chemical Formula 2 is used. As a result, a low shrinkage rate can be obtained, and as a result, as described above, the warpage of the semiconductor device package can be suppressed.

By applying the modified triphenol methane-based curing agent of the formula (2) to the naphthalene epoxy resin represented by the formula (1), the curing reaction is excellent compared to the case of using other curing agents can exhibit an appropriate curing rate and curing behavior. Therefore, the epoxy resin composition for semiconductor element sealing of the present invention is excellent in formability at the time of molding a semiconductor element, and can also improve workability and production efficiency.

The present invention may use other curing agents in addition to the curing agent represented by the formula (2). At this time, the hardening | curing agent which can be used together is preferable the hardening | curing agent containing two or more phenol groups in one molecule. Specific examples include phenol aralkyl type phenol resins, biphenyl aralkyl type phenol resins, phenol novolak type phenol resins, cresol novolak type phenol resins, xylloc type phenol resins, dicyclopentadiene type phenol resins, naphthalene type phenol resins, and triphenols. Methane type phenol resins, and the like, but is not necessarily limited thereto. These may be used alone or in combination of two or more. Of these, phenol aralkyl type phenol resins or xylloc type phenol resins can be preferably used.

When using a curing agent other than the modified triphenol methane-based curing agent represented by the formula (2), the modified triphenol methane-based curing agent represented by the formula (2) is included in 40 to 100% by weight based on 100% by weight of the total curing agent desirable. The curing time in the above range may be suitable to excellent moldability and workability.

In addition, in this invention, it is preferable to use a hardening | curing agent in 2-15 weight%, Preferably it is 3-12 weight% based on 100 weight% of all epoxy resin compositions. Hardening time in the above range is excellent in formability and workability, it may be excellent in shrinkage and bending properties.

(C) curing accelerator

The curing accelerator used in the present invention includes an imidazole series curing accelerator. As such, since the imidazole-based curing accelerator is included, as the glass transition temperature after the cured product of the epoxy resin composition is cured increases and the linear expansion coefficient is lowered, a low shrinkage rate can be obtained, and thus the bending property of the semiconductor device package can be controlled.

Particularly, when imidazole-based curing accelerators are used in the naphthalene-based epoxy resin represented by Chemical Formula 1 and the modified triphenol methane-based curing agent of Chemical Formula 2, the curing reaction is excellent, and thus, the curing time and curing behavior are excellent. It is excellent in moldability, and workability and production efficiency can also be improved.

Specific examples of the imidazole series curing accelerator according to the present invention are 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 2, 4-diamino-6-2'-methylimidazole (1 ')-ethyl-s-triazine, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5 -Dihydroxymethylimidazole, 2,3-zihydro 1H-pyrrolo [1,2-a] benzimidazole, and the like, but are not necessarily limited thereto. The imidazole series curing accelerator may be used in combination of one or two or more. Among these, 2-phenyl-4-methyl-5-hydroxymethylimidazole is preferable from the balance of warpage characteristics, fluidity at the time of molding and curing reaction.

The present invention may use other curing accelerators in addition to the imidazole series curing accelerators. Specific examples of the curing accelerator that can be used at this time include tertiary amines such as benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol and tri (dimethylaminomethyl) phenol; Organic phosphines such as triphenylphosphine, diphenylphosphine and phenylphosphine; Tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, and the like, but are not necessarily limited thereto. These may be used alone or in combination of two or more.

When using another curing accelerator in addition to the imidazole series curing accelerator, the imidazole series curing accelerator is preferably 40 to 100% by weight based on 100% by weight of the total curing accelerator. It has a suitable curing time in the above range, it may be excellent in moldability and workability.

In addition, the curing accelerator of the present invention (the curing accelerator using the imidazole-based curing accelerator alone or the imidazole-based curing accelerator in combination with the other curing accelerator) is used in 0.02 ~ 0.4% by weight based on 100% by weight of the total epoxy resin composition It is desirable to. It has a suitable hardening time in the said range, and can be excellent in moldability and workability.

(D) inorganic filler

Inorganic fillers are used in epoxy resin compositions to improve mechanical properties and lower stresses. Examples of the inorganic filler that can be used include fused silica, crystalline silica, alumina, silicon nitride, aluminum nitride, and the like, and in view of cost and mechanical properties enhancement, fused silica is preferable. In the case of using fused silica, its shape and particle diameter are not particularly limited, but an average particle diameter of 0.1-35 μm may be used.

The inorganic filler is preferably included in 70 to 95% by weight based on 100% by weight of the total epoxy resin composition. Within this range, the bending characteristics and the reliability of the package may be excellent, and fluidity and formability may be excellent. Preferably it is 75-92 weight%.

(E) silane coupling agent

The silane coupling agent that can be used in the present invention is not particularly limited as long as it reacts between the epoxy resin and the inorganic filler to improve the interfacial strength of the epoxy resin and the inorganic filler. For example, epoxysilane, aminosilane, mercaptosilane, alkyl Silane, alkoxysilane, and the like can be used. It may preferably comprise a double aminosilane coupling agent.

When the aminosilane coupling agent is applied to the naphthalene epoxy resin represented by the formula (1) and the modified triphenol methane-based curing agent of the formula (2), not only the reactivity is improved, but the strength of the epoxy resin composition can be improved, and the fluidity is improved. It can bring out the maximum effect. In addition, the solder resistance can be improved.

Examples of the aminosilane coupling agent include N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, N-2- (amino Ethyl) -3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) Propylamine, N-phenyl-3-aminopropyltrimethoxysilane, and the like, but are not necessarily limited thereto. These may be used alone or in combination of two or more. Preference is given to N-phenyl-3-aminopropyltrimethoxysilane, which is a secondary reactive silane in balance of double reactivity.

Other silane coupling agents may be used in addition to the aminosilane coupling agent. Under the present circumstances, the silane coupling agent which can be used together is not specifically limited. For example, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyl And mercaptosilane coupling agents such as epoxy silane coupling agents such as trimethoxysilane, 3-mercaptopropyltrimethoxysilane, and 3-mercaptopropylmethyldimethoxysilane.

When using another silane coupling agent together with the said aminosilane coupling agent, it is preferable that the said aminosilane coupling agent is contained in 30 to 100 weight% based on 100 weight% of total silane coupling agents. In the above range, the effect of improving the strength and fluidity of the epoxy resin composition may be more excellent.

The silane coupling agent is preferably included in 0.05 to 1 parts by weight based on 100% by weight of the total epoxy resin composition. In the above range, there is an effect of improving strength and fluidity, and may be excellent in moldability.

Other additives

Epoxy resin composition according to the present invention, if necessary, release agents such as natural wax, synthetic wax, higher fatty acid, higher fatty acid metal salt, and ester wax; Coloring agents such as carbon black, organic dyes, and inorganic dyes; Stress relieving agents such as silicone rubber, silicone oil, and silicone resin; Flame retardants, such as phosphazene, zinc borate, aluminum hydroxide, and magnesium hydroxide, can also be used further.

The method for producing the epoxy resin composition of the present invention described above is not particularly limited, but in general, each raw material is uniformly mixed using a Henschel mixer or a super mixer, melt-kneaded with a roll mill or a kneader, and cooled and pulverized. It can be prepared in the form of a final powder. At this time, melt kneading is preferably performed at 70 to 120 ° C. for 3 to 15 minutes. It is excellent in the fluidity | liquidity of the resin composition and the dispersibility of the raw material in a composition in the said range, and hardening reaction advances suitably and can prevent a void generation.

On the other hand, the present invention can provide a semiconductor device package sealed with the epoxy resin composition described above. At this time, the semiconductor device package to be sealed is preferably a cross-sectional type (for example, QFN, BGA, etc.). The method of sealing a semiconductor element is a method in which a low pressure transfer molding method is most commonly used, but a compression molding method, an injection molding method, a casting molding method, or the like may be used.

Here, the sealing process is not particularly limited, but may be manufactured by sealing molding (curing) the semiconductor device with an epoxy resin composition manufactured using a molding machine (selected according to the molding method) and post-curing the semiconductor device package which has been molded. have. At this time, the temperature and time to seal molding are 50-120 second at 160-190 degreeC, and it is preferable to make temperature and time to post-cure be 0 to 8 hours at 160-190 degreeC.

Hereinafter, the configuration and operation of the present invention through the preferred embodiment of the present invention will be described in more detail. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

Details that are not described herein will be omitted since those skilled in the art can sufficiently infer technically.

Example

The specifications of each component used in the following Examples and Comparative Examples are as follows:

(A) an epoxy resin

(a1) Naphthalene epoxy resin: HP-4770, DIC

(a2) Biphenyl type epoxy resin: YX-4000H, Japan Epoxy Resin

(a3) Triphenol methane type epoxy resin: EPPN-501H, Nippon kayaku

(B) Curing agent

(b1) Modified triphenol methane curing agent: HE-910C-10, Air water

(b2) Xylox phenolic resin: MEH-7800SS, Meiwa Plastic Industries

(C) curing accelerator

(c1) 2-phenyl-4-methyl-5-hydroxymethylimidazole: 2P4MHZ, NIPPON GOHSEI

(c2) triphenylphosphine: TPP, HOKKO CHEMICAL INDUSTRY

(D) Inorganic filler: Silica whose average particle diameter was 7 micrometers was used.

(E) Silane Coupling Agent

(E1) aminosilane: KBM-573, Shin-Etsu Chemical

(E2) Epoxysilane: KBM-403, Shin-Etsu Chemical

(F) Other additives

(f1) carbon black: MA600, Mitsubishi Chemical

(f2) Carnauba wax: Powderd Carnauba Wax No. 1, S.KATO & CO.

Each of the above components was weighed according to the composition shown in the following Table 1, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. After melt kneading at 100 ° C. for 7 minutes using a continuous kneader, the mixture was cooled and ground to prepare an epoxy resin composition.

(Unit: wt%) Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 (A) (a1) 7.43 3.71 6.83 - 5.96 6.98 (a2) - 3.71 - - - - (a3) - - - 6.97 - - (B) (b1) 3.64 3.75 2.13 4.10 - 2.17 (b2) - - 2.13 - 5.11 2.17 (C) (c1) 0.17 0.17 0.10 0.17 0.17 - (c2) - - 0.05 - - 0.12 (D) 88.00 88.00 88.00 88.00 88.00 88.00 (E) (e1) 0.20 0.10 0.20 0.20 0.20 - (e2) 0.10 0.10 0.10 0.10 0.10 0.10 (F) (f1) 0.26 0.26 0.26 0.26 0.26 0.26 (f2) 0.20 0.20 0.20 0.20 0.20 0.20 Sum 100 100 100 100 100 100

Property evaluation

The physical properties of the epoxy resin compositions of Examples 1 to 3 and Comparative Examples 1 to 3 were evaluated by the following methods, and the results are shown in Table 2 below.

1. Spiral Flow (inch): Using a low pressure transfer molding machine, the mold for spiral flow measurement according to EMMI-1-66, mold temperature 175 ℃, 70kgf / cm ² , injection pressure 9 MPa, curing time 90 The epoxy resin composition was injected on the conditions of the candle, and the flow length was measured. The higher the measured value, the better the fluidity.

2. Hardness (Hot Hardness): After 400FBGA was molded at 175 ° C. for 60 seconds using a MPS (Multi Plunger System) molding machine, the hardness of the curled part was measured with a Shore D hardness tester 10 seconds after the mold was opened.

3. Glass transition temperature (Tg, ℃): After making the standard specimen (12.7 × 10.0 × 6.4mm) and post-cured at 175 ℃ for 4 hours under a temperature of 5 ℃ / min using a thermomechanical analyzer (TMA) Physical property inflection points were measured.

4. High Temperature Flexural Modulus (kgf / mm ² ): After making the standard specimen (125 × 12.6 × 6.4mm) according to ASTM D-790 and curing it at 175 ℃ for 4 hours, using UTM (Universal Testing Machine) It was measured by the 3-point bending method at 260 ℃.

5. Bending characteristics (㎛): After molding for 60 seconds at 175 ℃ using a multi-plunger system (MPS) molding machine, after curing for 4 hours at 175 ℃, 400FBGA (18mm PCB 0.27mm, 0.6mm package thickness) The x18mm) type semiconductor device package was fabricated and the height difference between the center of the diagonal direction and the edge end of the upper surface was measured using a non-contact laser measuring instrument. The smaller the height difference, the better the bending characteristics.

6. Moisture absorption rate (%): After the moisture absorption in a constant temperature and humidity chamber of 121 ℃, 100% relative humidity for 24 hours, wait until it cools to room temperature, weighed the mass, and then the moisture absorption rate was calculated using the weight change before and after the moisture absorption.

7. Solder resistance: 5 cycles of the 400 FBGA package for evaluation of bending characteristics after drying at 125 ℃ for 24 hours (1 cycle is 10 minutes at -65 ℃, 10 minutes at 25 ℃, 10 at 150 ℃ Thermal shock test). After the package was left at 85 ° C. and 60% relative humidity for 168 hours, the package was subjected to optical cracking after preconditioning, which was repeated three times at 260 ° C. for 30 seconds. It was observed under a microscope. The evaluation of the package in which the appearance crack occurred was not carried out. Then, the presence of peeling between the epoxy resin composition and the lead frame was evaluated by using a non-destructive test C-SAM (Scanning Acoustic Microscopy). After the precondition condition and in the thermal shock test step, the number of semiconductor devices in which at least one crack occurred and the number of semiconductor devices in which the peeling occurred in the thermal shock test step were summed up as the number of solder resistance defects and the results are shown in Table 2.

Evaluation item Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Spiral Flow (inch) 56 64 57 41 59 49 Curing degree 87 83 83 89 75 81 Tg (占 폚) 178 167 165 188 142 149 High Temperature Flexural Modulus (kgf / ㎡ at 260 ℃) 105 93 92 144 73 86 Flexural Characteristics (㎛) 13 26 29 6 136 66 Hygroscopicity (%) 0.22 0.24 0.21 0.30 0.19 0.20 Number of solder resistance defects
(Based on 16 packages) 0 0 0 14 0 0

As shown in Table 2, Examples 1 to 3 showed excellent results in terms of warpage characteristics, degree of curing, and solder resistance compared to Comparative Examples 1 to 3.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments and can be manufactured in various forms, and a person of ordinary skill in the art to which the present invention pertains has the technical spirit of the present invention. However, it will be understood that other specific forms may be practiced without changing the essential features. It is therefore to be understood that the embodiments described above are in all respects illustrative and not restrictive.

Claims (13)

Epoxy resins; Curing agent; Curing accelerators; And inorganic fillers,
The epoxy resin includes a naphthalene-based epoxy resin,
The curing agent includes a modified triphenol methane-based curing agent,
The curing accelerator is an epoxy resin composition for sealing a semiconductor device, characterized in that it comprises an imidazole-based curing accelerator.

The epoxy resin composition of claim 1, wherein the naphthalene epoxy resin comprises a naphthalene epoxy resin represented by Formula 1 below:

[Formula 1]

(In Formula 1, R is alkylene having 1 to 6 carbon atoms, n and m are each 0 or 1).
The epoxy resin composition for sealing a semiconductor device according to claim 2, wherein R is CH ₂ .
The epoxy resin composition of claim 1, wherein the modified triphenol methane curing agent comprises a modified triphenol methane curing agent having a structure of Formula 2 below:

(2)

(In the formula (2), the average value of n is 0 to 5, the average value of m is 1 to 5, and the average value of n + m is 1 to 10).
The epoxy resin composition for sealing a semiconductor device according to claim 4, wherein the order of the two repeating units of Chemical Formula 2 is randomly arranged.
The epoxy resin sealing epoxy of claim 1, wherein the epoxy resin composition comprises 3 to 20 wt% of an epoxy resin, 2 to 15 wt% of a curing agent, 0.02 to 0.4 wt% of a curing accelerator, and 70 to 95 wt% of an inorganic filler. Resin composition.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the naphthalene epoxy resin is contained in an amount of 40 to 100% by weight based on the total epoxy resin.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the modified triphenol methane-based curing agent is contained in an amount of 40 to 100% by weight in the total curing agent.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the imidazole series curing accelerator comprises 2-phenyl-4-methyl-5-hydroxymethylimidazole.
According to claim 1, wherein the imidazole-based curing accelerator is epoxy resin composition for semiconductor element sealing, characterized in that it comprises 40 to 100% by weight of the total curing accelerator.
The epoxy resin composition for semiconductor element sealing according to claim 1, wherein the epoxy resin composition for semiconductor element sealing further comprises a silane coupling agent.
12. The epoxy resin composition for semiconductor element sealing according to claim 11, wherein the silane coupling agent comprises an aminosilane coupling agent in an amount of 30 to 100% by weight in the total silane coupling agents.
The semiconductor device which sealed the semiconductor element using the epoxy resin composition of any one of Claims 1-12.